Interfacial roughness and angle dependence of giant magnetoresistance in magnetic superlattices

Using the two-point conductivity formula, we numerically evaluate the giant magnetoresistance (GMR) in magnetic superlattices with currents in the plane of the layers (CIP), from which the effect of the interfacial roughness and magnetization configuration on the GMR is studied. With increasing interfacial roughness, the maximal GMR ratio is found to first increase and then decrease, exhibiting a peak at an optimum strength of interfacial roughness. For systems composed of relatively thick layers, the GMR is approximately proportional to ,where is the angle between the magnetizations in two successive ferromagnetic layers, but noticeable departures from this dependence are found when the layers become sufficiently thin. Received 21 September 1998 and Received in final form 22 December 1998     

Well-defined Co clusters embedded in an Ag matrix: A model system for the giant magnetoresistance in granular films

Well-defined granular Co/Ag films have been prepared by the co-deposition of in-beam prepared Co clusters and Ag atoms. In this way we were able to study the giant magnetoresistance (GMR) as a function of mean Co cluster size for a fixed Co cluster volume fraction v_cl as well as a function of v_cl for a fixed . Mean Co cluster size has been varied between and 6.9 nm, Co cluster volume fraction between 5 and 43%. The GMR was measured in-situ at T=4.2 K in magnetic fields 1.2 T. The analysis of the GMR data obtained from these studies clearly shows that spin-dependent scattering at the Co-cluster/Ag-matrix interface is the only relevant scattering mechanism causing the GMR in our well-defined samples. Received: 21 April 1998 / Received in final form: 17 May 1998 / Accepted: 18 May 1998     

Magnetic and transport properties of sputtered Fe/Si multilayers

The structural, magnetic and transport properties of sputtered Fe/Si multilayers were studied. The analyses of the data of the X-ray diffraction, resistance and magnetic measurements show that heavy atomic interdiffusion between Fe and Si occurs, resulting in multilayers of different complicated structures according to different sublayer thicknesses. The nominal Fe layers in the multilayers generally consist of Fe layers doped with Si, ferromagnetic Fe-Si silicide layers and nonmagnetic Fe-Si silicide interface layers, while the nominal Si spacers turn out to be Fe-Si compound layers with additional amorphous Si sublayers only under the condition either for the series or for the series multilayers. A strong antiferromagnetic (AFM) coupling and negative magnetoresistance (MR) effect, about 1%, were observed only in multilayers with iron silicide spacers and disappeared when -Si layers appear in the spacers. The dependences of MR on and on bilayer numbers N resemble the dependence of AFM coupling. The increase of MR ratio with increasing N is mainly attributed to the improvement of AFM coupling for multilayers with N. The dependence of MR ratio is similar to that in metal/metal system with predominant bulk spin dependent scattering and is fitted by a phenomenological formula for GMR. At 77 K both the MR effect and saturation field increase. All these facts suggest that the mechanisms of the AFM coupling and MR effect in sputtered Fe/Si multilayers are similar to those in metal/metal system. Received: 11 February 1998 / Revised: 9 March 1998 / Accepted: 9 March 1998     

Charge-density-wave instabilities and quantum transport in the monophosphate tungsten bronzes with m = 5 alternate structure

Resistivity, thermoelectric power and magnetotransport measurements have been performed on single crystals of the quasi two-dimensional monophosphate tungsten bronzes (PO₂)₄(WO₃)_2m for m =5 with alternate structure, between 0.4 K and 500 K, in magnetic fields of up to 36 T. These compounds show one charge density instability (CDW) at 160 K and a possible second one at 30 K. Large positive magnetoresistance in the CDW state is observed. The anisotropic Shubnikov-de Haas and de Haas-van Alphen oscillations detected at low temperatures are attributed to the existence of small electron and hole pockets left by the CDW gap openings. Angular dependent magnetoresistance oscillations (AMRO) have been found at temperatures below 30 K. The results are discussed in terms of a weakly corrugated cylindrical Fermi surface. They are shown to be consistent with a change of the Fermi surface below 30 K. Received 23 November 1999 and Received in final form 23 March 2000     

Effect of the structural quality of the buffer on the magnetoresistance and the exchange coupling in sputtered Co/Cu sandwiches

The effect of the structural quality of the buffer stack on the structural properties, giant magnetoresistance (GMR) and the quality of the antiferromagnetic coupling has been investigated for Co/Cu/Co sandwiches prepared by DC-magnetron sputtering. Three kinds of buffers were employed: type A: Cr(6 nm)/Co(0.8 nm)/Cu(10 nm), type B: Fe(6 nm)/Co(0.8 nm)/Cu(10 nm) and type C: Cr(4 nm)/Fe(3 nm)/Co(0.8 nm)/Cu(10 nm). For B and C type buffers, the antiferromagnetic alignment is very interesting at zero field with a coupling strength larger than 0.4 erg/cm² and a GMR signal reaching 5% at room temperature. However, for the A type buffer the antiferromagnetic coupling completely disappears, while the GMR drops to about 0.8%. X-ray diffraction, atomic force microscopy and transmission electron microscopy have been performed in order to understand the origin of the observed difference in the magnetic properties. The results show a strong difference in the average surface roughness, 1.15 nm and 0.35 nm, respectively for the A and C types buffers, and demonstrate that the quality of the surface of the buffer is the key to optimize both the GMR and the indirect exchange coupling. Received 11 July 2000     

Localization effects in the charge density wave state [4]of the quasi-two-dimensional monophosphate tungsten bronzes {(P{O_2})_4}{(W{O_3})_{2m}}(m = 7,8,9)

The monophosphate tungsten bronzes (PO ₂ ) ₄ (WO ₃ ) _2m are quasi-two-dimensional conductors which show charge density wave type electronic instabilities. We report electrical resistivity and magnetoresistance measurements down to 0.30 K and in magnetic fields up to 16 T for the m = 7, 8 and 9 members of this family. We show that these compounds exhibit at low temperature an upturn of resistivity and field dependences of the magnetoresistance characteristic of localization effects. We discuss the dimensionality of the regime of localization as m is varied. We show that for m =7, the regime is quasi-two-dimensional and three-dimensional for m = 8, 9. Received 16 September 1999     

Angular studies of the magnetoresistance in the density wave state of the quasi-two-dimensional purple bronze KMo<Subscript>6</Subscript>O<Subscript>17</Subscript>

The purple molybdenum bronze KMo₆O₁₇ is a quasi-two-dimensional compound which shows a Peierls transition towards a commensurate metallic charge density wave (CDW) state. High magnetic field measurements have revealed several transitions at low temperature and have provided an unusual phase diagram “temperature-magnetic field”. Angular studies of the interlayer magnetoresistance are now reported. The results suggest that the orbital coupling of the magnetic field to the CDW is the most likely mechanism for the field induced transitions. The angular dependence of the magnetoresistance is discussed on the basis of a warped quasi-cylindrical Fermi surface and provides information on the geometry of the Fermi surface in the low temperature density wave state.     

Anomalous temperature dependence of resistivity in quasi-one-dimensional conductors in a strong magnetic field

We present a heuristic, semiphenomenological model of the anomalous temperature (T) dependence of resistivity recently observed experimentally in the quasi-one-dimensional (Q1D) organic conductors of the family in moderately strong magnetic fields. We suggest that a Q1D conductor behaves like an insulator (), when its effective dimensionality is one, and like a metal (), when its effective dimensionality is greater than one. Applying a magnetic field reduces the effective dimensionality of the system and switches the temperature dependence of resistivity between the insulating and metallic laws depending on the magnitude and orientation of the magnetic field. We critically analyze whether various microscopic models suggested in literature can produce such a behavior and find that none of the models is fully satisfactory. In particular, we perform detailed analytical and numerical calculations within the scenario of magnetic-field-induced spin-density-wave precursor effect suggested by Gor'kov and find that the theoretical results do not agree with the experimental observations. Received 20 October 1998     

In plane to out of plane magnetic reorientation transition in partially ordered FePd thin films

It is demonstrated that perpendicular magnetic anisotropy may be obtained with a room temperature growth process in ordered (FePd) alloys. Indeed, using atomic layer by atomic layer epitaxy, a partial chemical ordering into the L1₀ structure is obtained, with a corresponding intermediate perpendicular anisotropy (). These samples provide an appropriate template for the study of the magnetic reorientation from in plane to out of plane magnetization upon layer's thickness increase. VSM, transverse Kerr measurements and magnetic force microscopy have been used in order to determine the relevant magnetic parameters and the occurrence of the reorientation transition. Received 13 October 1998 and Received in final form 5 February 1999     

Galvanomagnetic properties of disordered Mn semi-Heusler phases with Anderson localisation

The Anderson localisation has been observed in Heusler-type solid solutions where Mn replaces Ti or V in NiTiSb or CoVSb compounds respectively, due to the atomic and magnetic disorders. The magnetoresistance, Hall effect, thermopower and electron spin resonance of these solutions are investigated. Strong anomalies appear for the concentration range where a carrier localisation occurs; the mobility of carriers is strongly reduced, the magnetoresistance scales with the resistivity and the susceptibility of solid solutions. Received 31 May 2000     

Interfacial polarisation effect on the interlayer couplings in Co/Rh sandwiches

The structural, magnetic and transport properties of Co/Rh sandwiches grown by ultra high vacuum evaporation and sputtering have been studied. High-energy electron diffraction observations during the growth reveal that both Co and Rh layers have been stabilised in the (111) fcc structure for the evaporated sandwiches. X-ray measurements performed on sputtered samples show a predominant fcc polycrystalline structure of the stacks with a preferential (111) texture. Magnetisation and magnetoresistance measurements show a very strong antiferromagnetic exchange coupling for thin Rh layers, reaching for 4.8? Rh, the strongest ever observed in exchange coupled systems. This value is in good agreement with the value of obtained by ab initio calculations for Co/Rh (hcp) superlattices. This is explained by the magnetic nature of the Co/Rh interfaces. Indeed, the variation of the measured saturation magnetisation as a function of the Co layer thickness shows no evidence of Co moment reduction for the Co atoms located at the interfaces, even for the very thin layers. The value of the preserved magnetic moments of the cobalt atoms at the interfaces is confirmed by ab initio calculations for Co/Rh superlattices taking the intermixing into account. Received: 18 February 1998 / Received in final form: 30 April 1998 / Accepted: 29 May 1998     

Mechanism of grain-boundary magnetoresistance in Fe O films

The magnetotransport properties of magnetite films with different microstructures were investigated in order to identify prerequisites for the attainment of a large tunnelling magnetoresistance in polycrystalline samples. Epitaxial films on MgAl₂O₄, polycrystalline films on Al₂O₃ and rough MgAl₂O₄ substrates and a polycrystalline La_0.7Ca_0.3MnO₃ film on MgO were compared. Although grain boundaries induce a large high-field magnetoresistance in magnetite films, the low-field magnetoresistance characteristic for spin-polarized tunnelling was virtually absent in these samples. Two factors might be responsible for this behaviour: (1) grain boundaries in magnetite are conducting and do not form tunnelling barriers and (2) the spin-polarization near grain boundaries is suppressed due to non-stoichiometry. Received 15 April 2002 Published online 13 August 2002     

Non-equilibrium wetting transition in a magnetic Eden model

Magnetic Eden clusters (Ausloos et al., Europhys. Lett. 24, 629 (1993)) with ferromagnetic interaction between nearest-neighbor spins are grown in a confined 2d-geometry with short range magnetic fields acting on the surfaces. The change of the growing interface curvature driven by the field and the temperature is identified as a non-equilibrium wetting transition and the corresponding phase diagram is evaluated. Received 27 March 2000     

Mesoscopic charge density wave in a magnetic flux

The stability of a Charge Density Wave (CDW) in a one-dimensional ring pierced by a Aharonov-Bohm flux is studied in a mean-field picture. It is found that the stability depends on the parity of the number N of electrons. When the size of the ring becomes as small as the coherence length , the CDW gap increases for even N and decreases for odd N. Then when N is even, the CDW gap decreases with flux but it increases when N is odd. The variation of the BCS ratio with size and flux is also calculated. We derive the harmonics expansion of the persistent current in a presence of a finite gap. Received: 16 September 1997 / Received in final form: 12 November 1997 / Accepted: 13 November 1997     

Contributions to photodoping in oxygen-deficient YBa2Cu3Ox films

We report our studies on the superconducting and normal-state properties of metallic thin films ( 52 K) exposed to long-term white-light illumination (photodoping). It was observed that the effects of photoexcitation strongly depended on the temperature at which the photodoping was performed. At low temperatures, both the Hall mobility and the Hall number were photoenhanced, whereas, at temperatures slightly below room temperature, the Hall mobility initially showed an abrupt increase followed by a long-term decrease, and the Hall number increased even stronger than at low temperatures. The enhancement of the film's superconducting transition temperature T_c, caused by photodoping, exhibited the same temperature dependence as the enhancement of the Hall number, being largest ( 2.6 K) at high temperatures. From the asynchronous behavior of the Hall quantities, we conclude that both the photoassisted oxygen ordering and charge transfer mechanisms contribute to photodoping. The relative contributions of both mechanisms and, thus, the electronic properties of the photoexcited state are strongly temperature dependent. Studies of the relaxation of the photoexcited state at 290 K showed an unexpectedly short relaxation time of the Hall mobility after termination of the illumination. The relaxation saturated somewhat below the initial, undoped value, similarly to the decrease of the Hall mobility, observed upon long illumination. These latter findings give evidence for a competition between the oxygen ordering and thermal disordering processes during and after the photoexcitation in the high-temperature range. Received: 13 October 1997 / Accepted: 19 November 1997     

On the orientational dependence of giant magnetoresistance

The functional dependence of the giant magnetoresistance (GMR) with respect to the relative angle between the orientations of the magnetization in the magnetic slabs of a trilayer system is calculated by using the Kubo-Greenwood formula for electrical transport together with the fully-relativistic spin-polarized screened Korringa-Kohn-Rostoker method for semi-infinite systems and the coherent potential approximation. It is found that the functional dependence of the GMR is essentially of the form . Received 30 November 1998     

Noise spectroscopy in the breakdown of the IQHE

Summary The noise spectrum of the magnetoresistivity in the breakdown of the Integral Quantum Hall Effect (IQHE) at high currents is studied in wide high-quality GaAs/AlGaAs heterostructures on thei=2 Hall plateau, in particular for values of current and/or magnetic field at which pronounced steps and striking temporal patterns showing switching between different levels are observed. The noise spectra obtained from data which display switching are compared with the spectra obtained in the absence of switching. By an analysis based on time series simulation, Lorentzian noise components are separated and found to have similar characteristics in both types of data. The authors of this paper have agreed to not receive the proofs for correction.     

Interpretation of the magnetoresistance in doped magnetic tunnel junctions

We present a quantum mechanical model of the magnetoresistance in ferromagnetic tunnel junctions artificially doped by the introduction of layers of impurities in the middle of the barrier. The electron transport across the barrier is described by a combination of direct tunneling, tunneling assisted by spin-conserving scattering and tunneling assisted by spin-flip scattering. With this model, we interpret recent experimental results concerning the dependence of the TMR amplitude on the amount of impurities in the barrier and on temperature. Received 1st February 2001 and Received in final form 14 June 2001