Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE

Separation technology is an indispensable step in the preparation of freestanding GaN substrate. In this paper, a largearea freestanding GaN layer was separated from the substrate by an electrochemical liftoff process on a sandwich structure composed of an Fe-doped GaN substrate, a highly conductive Si-doped sacrificial layer and a top Fe-doped layer grown by hydride vapor phase epitaxy(HVPE). The large difference between the resistivity in the Si-doped layer and Fe-doped layer resulted in a sharp interface between the etched and unetched layer. It was found that the etching rate increased linearly with the applied voltage, while it continuously decreased with the electrochemical etching process as a result of the mass transport limitation. Flaky GaN pieces and nitrogen gas generated from the sacrificial layer by electrochemical etching were recognized as the main factors responsible for the blocking of the etching channel. Hence, a thick Si-doped layer grown by HVPE was used as the sacrificial layer to alleviate this problem. Moreover, high temperature and ultrasonic oscillation were also found to increase the etching rate. Based on the results above, we succeeded in the liftoff of ～ 1.5 inch GaN layer. This work could help reduce the cost of freestanding GaN substrate and identifies a new way for mass production.     

Growth, modulation and photoresponse characteristics of vertically aligned ZnO nanowires

Vertically aligned, c-axis oriented zinc oxide (ZnO) nanowires were grown on Si substrate by metal organic chemical vapor deposition (MOCVD) technique, where sputtered aluminum nitride (AlN) film was used as an intermediate layer and thermally evaporated barium fluoride (BaF₂) film as a sacrificial layer. The aspect ratio and density of the nanowires were also varied using only Si microcavity without any interfacial or sacrificial layer. The UV detectors inside the microcavity have shown the higher on-off current ratio and fast photoresponse characteristics. The photoresponse characteristics were significantly varied with the aspect ratio and the density of nanowires.     

Fabrication of nanochannels via near-field electrospinning

A simple and low-cost method is suggested to fabricate nanochannels via Near-Field Electrospinning (NFES). In this process, orderly and patterned nanofibers direct-written by NFES are used as sacrificial templates. Well-defined nanochannels are available after the removal process of both sacrificial fibers and material coating over the fibers. The sacrificial fiber, controlled by NFES, dominates the channel geometry. The channel width ranges from 133 nm to 13.54?μm while the applied voltage increases from 1.2 kV to 2.5 kV. Complicated wave-shape and grid pattern channels are presented under a corresponding movement of substrate. This method integrates electrospinning with conventional MEMS fabrication technology and has a potential in micro/nano manufacturing.     

Shadowgraphy investigation of laser-induced forward transfer: Front side and back side ablation of the triazene polymer sacrificial layer

Thin films of a photodecomposible triazene polymer are used as sacrificial layer for the micro-deposition of sensitive materials by laser-induced forward transfer. To understand the ablation process of this sacrificial layer, the ultraviolet laser ablation of triazene films was investigated by time-resolved shadowgraphy. Irradiation from the film side shows a complete decomposition into gaseous fragments, while ablation through the substrate causes ejection of a solid flyer of polymer. The occurence of the flyer depends on the film thickness as well as on the applied fluence, and a compact flyer is obtaind when these two parameters are optimized.     

光栅光阀器件的结构改进与制作工艺研究

根据光栅光阀的工作原理,在结构上对传统的光栅光阀器件进行了改进,分析了改进后光栅光阀器件的光学特性、结构特性,以及制作工艺流程.改进后的光栅光阀结构中硅基底上设有二氧化硅隔离层,隔离层上沉积无定形硅作为牺牲层,可动梁的材料是氮化硅,固定梁为蒸镀的金属铝层.通过离子刻蚀的方法刻蚀图形,用化学腐蚀方法掏空牺牲层得到所需桥梁状结构.研究表明改进后的器件黑区范围小,驱动电压较低,光学效率较高,具有潜在的应用前景.     

图形硅衬底GaN基发光二极管薄膜去除衬底及AlN缓冲层后单个图形内微区发光及 应力变化的研究

研究了图形硅衬底上外延生长的氮化镓(GaN)基发光二极管(LED)薄膜、去除硅衬底后的无损自由状态LED薄膜以及去除氮化铝(AlN)缓冲层后的自由状态LED薄膜单个图形内的微区光致发光(PL)性能, 用荧光显微镜与扫描电镜观测了去除AlN缓冲层前后LED薄膜断面弯曲状况的变化. 研究结果表明: 1)去除硅衬底后, 自由支撑的LED薄膜朝衬底方向呈柱面弯曲状态, 且相邻图形的柱面弯曲方向不一致, 当进一步去除AlN缓冲层后薄膜会由弯曲变为平整; 2)LED薄膜在去除硅衬底前后同一图形内不同位置的PL谱具有显著差异, 而当去除AlN缓冲层后不同位置的PL谱会基本趋于一致; LED薄膜每一位置的PL 谱在去除硅衬底后均出现明显红移, 进一步去除AlN缓冲层后PL谱出现程度不一的微小蓝移; 3)自由支撑的LED薄膜去除AlN缓冲层后, PL光强随激光激发密度变化的线性关系增强, 光衰减得到改善.     

Surface roughness influence on the pull-in voltage of microswitches in presence of thermal and quantum vacuum fluctuations

In this work we investigate the influence of the combined effect from random self-affine roughness, finite conductivity, and finite temperature on the pull-in voltage in microswitches influenced by thermal and quantum vacuum fluctuations through the Casimir force and electrostatic forces. It is shown that for separations within the micron or sub-micron range the roughness influence plays a dominant role, while temperature starts to show its influence well above micron separations. Indeed, increasing the temperature leads to higher pull-in voltages since it leads to an increased Casimir force. The temperature influence is more significant for relatively large roughness exponent H ∼ 1, while its influence is significantly lower with increasing lateral roughness correlation length ξ or due to long wavelength surface smoothness.     

镍过渡层对磁控溅射银自润滑涂层性能的影响

研究了镍(Ni)过渡层对镍基合金718基底上沉积的银自润滑涂层性能的影响.实验结果显示,具有过渡层的银涂层晶粒尺寸变小,晶格参数和晶格应变无明显变化,涂层表面更加致密,缺陷减少.在77～300K热冲击50次后,涂层表面无裂纹、剥落等现象,具有良好的抗热震性能.在常温大气、常温真空和?100°C真空三种下,对涂层的摩擦磨...     

Lithographic positioning, areal density increase and fluid transport in rolled-up nanotubes

We study the formation process of rolled-up InAs/GaAs nanotubes (RUNTs) as a function of etching time and sacrificial layer thickness for tube diameters between 20 and 560 nm. Within this diameter range the roll-up velocity strongly depends on the sacrificial layer thickness but is independent of the tube diameter. We also find that the roll-up distance saturates with etching time for distances around 8–16 μm. Since we define the starting edge of the roll-up process by optical lithography, we are able to position individual RUNTs on a substrate surface with reasonable accuracy. We also show that the areal density of the tubes on a surface can be doubled if a two-fold stack of strained bilayers is selectively underetched. Finally, we record organic fluid transport within a RUNT in real time and we report intense red light emission from such filled-up nanotubes.     

光栅光阀器件的结构改进与制作工艺研究

根据光栅光阀的工作原理,在结构上对传统的光栅光阀器件进行了改进,分析了改进后光栅光阀器件的光学特性、结构特性,以及制作工艺流程.改进后的光栅光阀结构中硅基底上设有二氧化硅隔离层,隔离层上沉积无定形硅作为牺牲层,可动梁的材料是氮化硅,固定梁为蒸镀的金属铝层.通过离子刻蚀的方法刻蚀图形,用化学腐蚀方法掏空牺牲层得到所需桥梁状结构.研究表明改进后的器件黑区范围小,驱动电压较低,光学效率较高,具有潜在的应用前景.     

Preparation and application of the 3C–SiC substrate to piezoelectric micro cantilever transducers

This study examines the fabrication process and mechanical properties of piezoelectric films with the substrate, which is made from silicon carbide. After depositing the PZT thick film on silicon carbide substrate and silicon substrate respectively, it was shown that silicon carbide substrate formed a stable interface with PZT thick film up to 950?°C, compared with silicon substrate. In addition, the dielectric constant of the PZT thick film sintered at 950?°C on a silicon carbide substrate was 843, and this value was about over 25 % improved value compared with that on a silicon substrate. A thick film piezoelectric micro transducer of a micro cantilever type was fabricated by using a multifunctional 3C–SiC substrate. The fabricated micro cantilever was a micro cantilever with multiple thin films on either silicon or silicon carbide substrate. The piezoelectric thick-film micro cantilever that was fabricated by using a SiC substrate showed excellent mechanical and thermal properties. The piezoelectric micro cantilever on the SiC substrate shows an excellent sensitivity towards the change of mass compared with the piezoelectric micro cantilever on the Si substrate.     

Localized grafting through chemical lift-off

In this work we present two techniques that provide localized functionalization of the surface of materials. Both lead to localized grafted thin organic films (10-200 nm). The localization is brought by a chemical lift-off process, which relies on patterned weakly bonded films as sacrificial layers, combined with electrochemical (SEEP) or chemical (GraftFast©) processes which provides the final robust pattern on the surface. Both grafting processes, which were recently described, take advantage of the redox activation of diazonium salts associated with vinylic monomers in aqueous solution, and lead to similar grafted polymer films. Thanks to the high difference in adhesion between the grafted polymer and the patterned sacrificial layer (either an ink or weakly bound self-assembled monolayers), the latter may be easily removed, which unveils uncovered areas of the substrate.     

LaB6场发射阵列牺牲层制备工艺

分析了传统牺牲层材料铝在制备LaB6场发射阵列时存在的问题,利用溅射及热蒸发工艺依次制备铝膜和氧化锌膜,制备出了一种新型的牺牲层——ZnO-Al复合牺牲层,并对所制备的阵列进行了测试。实验结果表明：ZnO-Al复合牺牲层能够有效地解决电化学腐蚀的问题,所制备出的LaB6场发射阵列尖锥保持了完好的形貌,其发射特性也达到了最初制备场发射阵列的要求,说明ZnO-Al复合牺牲层是作为LaB6场发射阵列牺牲层的理想材料。     

Effect of ZnO sacrificial layer thickness on the structure and optical properties of GaN nanoparticles prepared by RF magnetron sputtering

GaN nanoparticles were prepared on sapphire (0001) substrates with ZnO sacrificial layers by self assembly of Ga₂O₃ films in their reaction with NH₃. ZnO sacrificial layers with different thicknesses and Ga₂O₃ films were deposited on sapphire substrates in turn by a radio frequency (RF) magnetron sputtering system. Nitridation of the Ga₂O₃ films was then carried out in a quartz tube furnace. The effect of ZnO sacrificial layer thickness on the structure and optical properties of nanoparticles prepared by RF magnetron sputtering were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and photoluminescence (PL). GaN nanoparticles with ZnO sacrificial layers of different thicknesses possess hexagonal wurtzite crystal structure and have a preferred orientation with c axis perpendicular to the sapphire substrates. XRD, SEM, and AFM results reveal that the better-crystallinity, uniform, and well-dispersed GaN nanoparticles (～30 nm) without agglomeration were obtained with a ZnO sacrificial layer 300-nm thick. The PL result reveals that the optical properties of the GaN nanoparticles are improved with a ZnO sacrificial layer 300-nm thick. Therefore, we suggest that a ZnO sacrificial layer 300-nm thick is the most suitable condition for obtaining better-quality GaN nanoparticles with good luminescence performance. Moreover, the mechanism of the formation of GaN nanoparticles with ZnO sacrificial layers is also discussed.     

Thermal stress-induced fracture of coating layer of galvannealed steel

The thermal stress-induced multiple fracture of the Fe-Zn intermetallic compound coating layer of galvannealed steel was investigated for samples with IF (interstitial free steel) and SPCC (steel plate cold commercial, Japanese Industrial Standard) as substrates. The analysis of the measured length of the multiply fractured coating layer showed that the fracture strength of the coating layer was 260–280 MPa and the residual stress around 720–740 MPa of the coating layer was reduced to around 130–140 MPa through the multiple fracture. The influences of the coating layer thickness and the stress–strain curve of the substrate on the multiple fracture behavior of the coating layer were also clarified.     

LaB6场发射阵列牺牲层制备工艺

 分析了传统牺牲层材料铝在制备LaB6场发射阵列时存在的问题,利用溅射及热蒸发工艺依次制备铝膜和氧化锌膜,制备出了一种新型的牺牲层——ZnO-Al复合牺牲层,并对所制备的阵列进行了测试。实验结果表明：ZnO-Al复合牺牲层能够有效地解决电化学腐蚀的问题,所制备出的LaB₆场发射阵列尖锥保持了完好的形貌,其发射特性也达到了最初制备场发射阵列的要求,说明ZnO-Al复合牺牲层是作为LaB₆场发射阵列牺牲层的理想材料。     

Thermocapillary deformation of a water layer at local heating

A horizontal water layer of 0.29-0.44 mm thickness, locally heated from the substrate, is investigated. The value of thermocapillary deformation occurring at local heating is measured by an inverted laser scanning confocal microscope Zeiss LSM 510 Meta. The heater in the form of strip of 0.5-mm width, 40-mm length, and 0.5-mm height made of indium oxide is sputtered on a sapphire substrate. The water temperature from the side of the substrate is measured using the infrared scanner Titanium 570M. We studied in detail the effect of the initial layer thickness and heating power on the value of thermocapillary deformation and temperature field. It is shown that deformation increases with an increase in thermal capacity and decrease in the layer thickness. Results of numerical simulation are in good qualitative agreement with the measurement results.     

Amélioration du transfert thermique par un dépôt poreux sur la paroi d'un échangeur tubulaire

A study of flow regime and heat transfer in an annular heat exchanger partially filled with a porous medium is presented in this work. Constant heat flux and constant wall temperature boundary conditions on the inner cylinder are considered, while the outer cylinder is assumed adiabatic. The study is for both the thermal entry region and the thermally fully developed region. The flow in the porous region is modelled either by the Darcy-Brinkman equation for which an exact solution is developed or by the Darcy-Brinkman-Forchheimer equation in order to take into account inertial effects. For this case a numerical solution based on a control volume method is discussed. The results emphasize the effect of the porous layer attached to the inner cylinder on the thermal development length and heat transfer rate. It is shown that the porous substrate reduces the thermal entry length. When the effective thermal conductivity of the saturated porous medium is of the order of the fluid thermal conductivity, the local Nusselt does not vary monotonically with the thickness of the substrate. However, the use of a porous matrix always leads to an increase in the heat transfer rate provided its thermophysical properties and thickness are well chosen.     

ZnO外延膜与蓝宝石衬底的取向偏差及其弯曲变形

采用常压MOCVD方法在Al2O3(00．1)衬底上生长出了高质量ZnO单晶薄膜。由ZnO(00．2)面和Al2O3(00．6)面及ZnO(10．2)面和Al2O3(11．6)面X射线双晶(w／2θ衍射曲线的相对峰位,得到ZnO外延膜的晶格常数及外延层和衬底间的取向差异角。结果表明外延层和衬底在应力作用下产生了取向差和晶格畸变,并且取向倾斜方向与衬底的切割倾角方向一致;高温直接生长的样品的取向差比有低温缓冲层样品更大,晶格畸变也更严重。高温直接生长的样品弯曲半径小而应力更大;实验测量的应力值和理论计算的热应力值之间存在差异,原因主要是晶格失配应力的存在。有缓冲层的样品由于能更好地弛豫晶格失配引入的应力,热应力所占整个残余应力的比例相对更大。     

A general model for nano-cantilever switches with consideration of surface effects and nonlinear curvature

A general model for nano-cantilever switches with consideration of surface stress, nonlinear curvature, the location and length of the fixed electrode is developed. Some representative cantilever switch architectures are incorporated into this model. The governing equation is derived by using Hamilton principal and solved numerical. Results show that the influence of nonlinear curvature and surface effect on the pull-in instability and free vibration is significant for a switch with a large gap-length ratio and a short fixed electrode (the length of the fixed electrode is smaller than that of the cantilever nanobeam). The length and position of the fixed electrode have a significant effect on the pull-in parameters.