超高压下冲击波速度直接测量技术

针对超高压下透明材料的高压离化机理,分析了透明材料中冲击波直接诊断技术的基本方法. 利用Drude-自由电子气模型,分析了不同冲击压力下冲击波阵面反射率的变化. 从理论上比较了不同探针光波长反射率的区别,发现探针光波长为660 nm时比探针光波长为532 nm时获得的冲击波阵面反射率要高. 对探测器"致盲"问题也进行了研究. 通过分析反射信号的时间顺序和强度大小,发现"致盲"效应是由X光对透明窗口离化引起的. 同时,发现方波驱动脉冲平台的前沿到达时刻和X光离化效应出现的时刻相同,冲击波信号到达时刻晚于X光离化时刻. 通过实验结果,得到蓝宝石中冲击波速度为35 km/s时,其波阵面的反射率约为40%. 通过理论分析和实验数据比对的方法,验证了蓝宝石中的减速曲线. 给出了加蓝宝石窗口后的测速公式. 经过和实验对比,确认了测速公式的正确性. 关键词： 冲击波 光学诊断 成像 干涉仪     

"三明治"靶型在间接驱动冲击波实验中的应用

间接驱动方式具有提供更高冲击波压力的潜力,对冲击波物理研究来说是一种很好的驱动方式.针对间接驱动下X射线离化对透明窗口造成的致盲问题,提出了新的"三明治"靶型结构,以完成间接驱动下冲击波实验.该靶型可以用两种方法避免致盲效应对实验的干扰.一种方法是从时间上避开致盲效应,使致盲效应与冲击波测量区错开,从而获得冲击波数据.另一种方法是从强度上屏蔽X射线,将X射线阻挡在透明材料之前,使其不能产生致盲效应.对单冲击实验而言,用增加烧蚀层厚度的方法,将X射线离化效应与冲击波信号从时间上错开,获得了蓝宝石和石英晶体中冲击波实验的结果.用增加阻挡层的方法,获得了间接驱动条件下石英晶体和聚苯乙烯材料中的冲击波实验结果.提出的"三明治"靶型,为间接驱动条件下状态方程和冲击波调速技术提供了技术支持. 关键词： 冲击波 光学诊断 离化效应 干涉仪     

辐射驱动条件下冲击波速度直接测量技术

针对超高压下透明材料的高压离化机理,分析了透明材料中冲击波直接诊断技术的基本方法。利用Drude自由电子气模型,分析了不同冲击压力下冲击波阵面反射率的变化。设计了专门的实验,将探测器致盲区与信号区错开,获得了蓝宝石中冲击波阵面反射的信号。结果表明:冲击波速度为32 km/s时,其波阵面的反射率约为35%,致盲效应出现时间与激光脉冲峰值到达时刻相同,持续时间也与激光脉宽相同。分析了致盲应产生的原因,并提出了解决办法。给出了加蓝宝石窗口后的测速公式,经过和实验对比,确认了测速公式的正确性。     

辐射驱动条件下冲击波速度直接测量技术

 针对超高压下透明材料的高压离化机理,分析了透明材料中冲击波直接诊断技术的基本方法。利用Drude自由电子气模型,分析了不同冲击压力下冲击波阵面反射率的变化。设计了专门的实验,将探测器致盲区与信号区错开,获得了蓝宝石中冲击波阵面反射的信号。结果表明:冲击波速度为32 km/s时,其波阵面的反射率约为35%,致盲效应出现时间与激光脉冲峰值到达时刻相同,持续时间也与激光脉宽相同。分析了致盲应产生的原因,并提出了解决办法。给出了加蓝宝石窗口后的测速公式,经过和实验对比,确认了测速公式的正确性。     

激光冲击陶瓷中反射拉伸波破坏的预防

激光冲击过程中,反射拉伸波一直都是造成材料失效的主要破坏模式。为了进一步分析陶瓷材料的冲击性能,控制拉伸波对材料造成的破坏,从而最终达到改善其脆性的目的,使用高功率钕玻璃脉冲激光器对Al2O3陶瓷进行了冲击试验。通过在Al2O3试样背表面粘贴胶带,发现陶瓷表现出与无粘贴状态下完全不同的破裂模式。使用扫描电子显微技术观察其断口形貌并结合理论分析,发现粘贴胶带以后,对背表面的反射拉伸波能量有相当程度的衰减,大幅减少了拉应力的作用。通过计算表明,这种背面粘贴的胶带可降低冲击波能量到反射前的40％左右,这样就可以通过降低反射波能量来大幅减少拉伸波造成的灾难性脆断。     

纳米Cu/Al2O3组装体模板合成与光吸收

以有序的多孔氧化铝为模板,利用交流电在孔洞中沉积金属铜得到纳米Cu粒子/Al₂O₃组装体系.透射电镜观察显示随着交流电沉积时间的延长,孔洞中纳米Cu粒子数量增加.测量了纳米Cu粒子/Al₂O₃组装体系的紫外可见光吸收光谱,发现随着孔洞中纳米Cu粒子数量增加,纳米Cu粒子/Al₂O₃组装体系的吸收带边大幅度红移;根据雷利散射引起的消光增强解释了组装体吸收带边红移的原因.同时发现 关键词： 纳米Cu 模板合成 光吸收     

Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs

The structural properties of a-Al₂O₃/Ge, a-Al₂O₃/In_0.5Ga_0.5As and a-Al₂O₃/In_0.5Al_0.5As/InGaAs interfaces were investigated by density-functional theory (DFT) molecular dynamics (MD) simulations. Realistic a-Al₂O₃ samples were generated using a hybrid classical-DFT MD “melt and quench” approach. The interfaces were formed by annealing at 700 K/800 K and 1100 K with subsequent cooling and relaxation. The a-Al₂O₃/Ge interface demonstrates pronounced interface intermixing and interface bonding exclusively through Al–O–Ge bonds generating high interface polarity. In contrast, the a-Al₂O₃/InGaAs interface has no intermixing, Al–As and O–In/Ga bonding, low interface polarity due to nearly compensating interface dipoles, and low substrate deformation. The a-Al₂O₃/InAlAs interface demonstrated mild intermixing with some substrate Al atoms being adsorbed into the oxide, mixed Al–As/O and O–Al/In bonding, medium interface polarity, and medium substrate deformation. The simulated results demonstrate strong correlation to experimental measurements and illustrate the role of weak bonding in generating an unpinned interface for metal oxide/semiconductor interfaces.     

Fabrication of ZnO/Al2O3 core-shell nanostructures and crystalline Al2O3 nanotube

We have demonstrated the crystalline ZnO-Al₂O₃ core-shell nanowire structure by atomic layer deposition (ALD) at a temperature 100 °C. The core-shell structure could have potential applications in the fabrication of ZnO field effect transistor. After dissolving the ZnO core, shape defined, rigid and robust crystalline Al₂O₃ shelled nanostructures have been fabricated. Nanowire ZnO nanostructures have been replicated by alumina shell. This is one of the most effective techniques for producing core-shell or shell/hollowed nanostructures of any desired objects. The Al₂O₃ shelled nanostructures could have potential applications as space confined nanoreactors, drug delivery, nanofluidic channels and optical transmitting.     

退火对电子束热蒸发193nm Al2O3/MgF2反射膜性能的影响

设计并镀制了193nm Al₂O₃/MgF₂反射膜，对它们在空气中分别进行了250—400℃的高温退火，测量了样品的透射率光谱曲线和绝对反射率光谱曲线.发现样品在高反射区的总的光学损耗随退火温度的升高而下降，而后趋于饱和.采用总积分散射的方法对样品在不同退火温度下的散射损耗进行了分析，发现随着退火温度的升高散射损耗有所增加.因此，总的光学损耗的下降是由于吸收损耗而不是散射损耗起主导作用.对Al₂O₃材料的单层膜进行了同等条件的退火处理，由它们光学性能的变化推导出它们的折射率和消光系数的变化，从而解释了相应的多层膜光学性能变化的原因.反射膜的反射率在优化联系、镀膜工艺与退火工艺的基础上达98％以上. 关键词： 193nm 反射膜 退火 光学损耗 吸收     

Investigation of interface characteristics of Al2O3/Si under various O2 plasma exposure times during the deposition of Al2O3 by PA-ALD

Plasma-assisted atomic layer deposition (PA-ALD) is more suitable than thermal atomic layer deposition (ALD) for mass production because of its faster growth rate. However, controlling surface damage caused by plasma during the PA-ALD process is a key issue. In this study, the passivation characteristics of Al₂O₃ layers deposited by PA-ALD were investigated with various O₂ plasma exposure times. The growth per cycle (GPC) during Al₂O₃ deposition was saturated at approximately 1.4?Å/cycle after an O₂ plasma exposure time of 1.5?s, and a refractive index of Al₂O₃ in the range of 1.65–1.67 was obtained. As the O₂ plasma exposure time increased in the Al₂O₃ deposition process, the passivation properties tended to deteriorate, and as the radio frequency (RF) power increased, the passivation uniformity and the thermal stability of the Al₂O₃ layer deteriorated. To study the Al₂O₃/Si interface characteristics, the capacitance-voltage (C-V) and the conductance-voltage (G-V) were measured using a mercury probe, and the fixed charge density (Q_f) and the interface trap density (D_it) were then extracted. The Q_f of the Al₂O₃ layer deposited on a Si wafer by PA-ALD was almost unaffected, but the D_it increased with O₂ plasma exposure time. In conclusion, as the O₂ plasma exposure time increased during Al₂O₃ layer deposition by PA-ALD, the Al₂O₃/Si interface characteristics deteriorated because of plasma surface damage.     

Characteristics of sandwich-structured Al2O3/HfO2/Al2O3 gate dielectric films on ultra-thin silicon-on-insulator substrates

Sandwich-structure Al₂O₃/HfO₂/Al₂O₃ gate dielectric films were grown on ultra-thin silicon-on-insulator (SOI) substrates by vacuum electron beam evaporation (EB-PVD) method. AFM and TEM observations showed that the films remained amorphous even after post-annealing treatment at 950 °C with smooth surface and clean silicon interface. EDX- and XPS-analysis results revealed no silicate or silicide at the silicon interface. The equivalent oxide thickness was 3 nm and the dielectric constant was around 7.2, as determined by electrical measurements. A fixed charge density of 3 × 10¹⁰ cm⁻² and a leakage current of 5 × 10⁻⁷A/cm² at 2 V gate bias were achieved for Au/gate stack /Si/SiO₂/Si/Au MIS capacitors. Post-annealing treatment was found to effectively reduce trap density, but increase in annealing temperature did not made any significant difference in the electrical performance.     

Chemical quenching of positronium in Fe2O3/Al2O3 catalysts

Fe₂O₃/Al₂O₃ catalysts were prepared by solid state reaction method using α-Fe₂O₃ and γ-Al₂O₃ nano powders. The microstructure and surface properties of the catalyst were studied using positron lifetime and coincidence Doppler broadening annihilation radiation measurements. The positron lifetime spectrum shows four components. The two long lifetimes τ₃ and τ₄ are attributed to positronium annihilation in two types of pores distributed inside Al₂O₃ grain and between the grains, respectively. With increasing Fe₂O₃ content from 3 wt% to 40 wt%, the lifetime τ₃ keeps nearly unchanged, while the longest lifetime τ₄ shows decrease from 96 ns to 64 ns. Its intensity decreases drastically from 24% to less than 8%. The Doppler broadening S parameter shows also a continuous decrease. Further analysis of the Doppler broadening spectra reveals a decrease in the p-Ps intensity with increasing Fe₂O₃ content, which rules out the possibility of spin-conversion of positronium. Therefore the decrease of τ₄ is most probably due to the chemical quenching reaction of positronium with Fe ions on the surface of the large pores.     

Al2O3增强的Co2-C98/Al2O3/Si异质结的光伏效应

随着能源危机的加剧,太阳能电池作为开发和利用太阳能的一种普遍形式, 日益受到世界各国的重视.随着太阳能电池向着高效率、薄膜化、无毒性和原材料丰富的方向发展, 单纯的硅系太阳能电池已经无法达到这样的要求,因此新的材料和工艺的开发利用迫在眉睫. 本文研究了碳材料在硅异质节上实现光伏效应的改善及其可能在太阳能电池上的应用. 采用脉冲激光沉积方法制备的Co₂-C₉₈/Al₂O₃/Si异质结构在标准日光照射 (AM1.5, 100 mW/cm²)条件下,可获得0.447 V的开路电压和18.75 mA/cm²的电流密度, 转换效率可达3.27%.通过电容电压特性和暗条件下的电输运性能测量, 证明了氧化铝层的引入不但对单晶硅的表面起到了物理钝化作用,减小了反向漏电流, 使异质结界面缺陷、界面能级和复合中心减少,还起到了场效应钝化作用, 增加了异质结界面的势垒高度,增加了开路电压,使异质结的光伏效应显著增强.     

基于速度干涉仪的冲击波精密调速实验技术研究

冲击波精密调速技术是惯性约束聚变研究的关键技术之一. 针对冲击波精密调速诊断技术的要求, 以神光III原型上脉宽为3 ns的两台阶整形激光脉冲为源, 用石英晶体做窗口材料, 模拟了双冲击在石英晶体中传输和追赶的过程. 利用两发典型双冲击波调速的实验数据, 验证了神光III原型具有的精密调速能力. 实验结果表明, 在驱动源、 靶和诊断系统参数一致的条件下, 两发实验获得的实验结果中两次冲击出现的时刻, 冲击波速度都很一致. 通过精细分析, 发现在两次冲击交会的时刻, 干涉条纹清晰度和完整性变化最大, 最终数据处理获得的冲击波速度偏差也最大. 同时, 在二次冲击的冲击波速度有较大增加的条件下, 并没有观察到冲击波阵面的反射率的明显增加. 本文的实验结果作为一个数据依据, 为全面开展冲击波调速实验提供了有效的方法.     

Farinfrared absorption in Al2O3 and MgO

Far-infrared absorption measurements performed in Al₂O₃ and MgO between 300 and 1 500 K with a Fourier scanning interferometer are reported. A temperature analysis of results based on a phonon self-energy model allows to assign the absorption in this region to 2- and 3-phonon difference processes. The contributions of these processes are separated and discussed. In Al₂O₃, the frequency dependence of the absorption is also analyzed. A good overall agreement between theory and experiment is evidenced.     

Tunable 5-watts Ti:Al2O3laser oscillating with a quasi-continuous wave pumping

An investigation of the output characteristics of Ti !A12O3 laser pumped by the second harmornic generation from an acoustooptic Q -switched Nd:YAG laser is made. An average output power of 5 watts has been obtained when the pump power is 14. 5 watts. The slope efficiency is 55. 5%, and the quantum efficiency is approximately 80%.     

C60在冲击波作用下的反应研究

 采用爆轰波驱动飞片,对C₆₀样品进行冲击实验,实验产生的烟灰经甲苯萃取后,采用高效液相色谱进行成份分析。结果表明：冲击波的高温高压作用使C₆₀样品大部分分解,少部分形成高碳富勒烯、富勒烯包合物和其它碳簇产物。研究了不同冲击波作用下,C₆₀样品的压强、温度的变化及对C₆₀反应的影响,并对C₆₀的分解与聚合的作用机理进行了探讨。     

The microwave response of MgB2 /Al2O3 superconducting thin films

Microwave characteristics of MgB2/Al2O3 superconducting thin films were investigated by coplanar resonator technique. The thin films studied have different grain sizes resulting from different growth techniques. The experimental results can be described very well by a grain-size model which combines coplanar resonator theory and Josephson junction network model. It was found that the penetration depth and surface resistance of thin films with smaller grain sizes are larger than those of thin films with larger grain sizes.     

强冲击压缩下LiF，Al2O3和LiTaO3单晶的透光性

在二级轻气炮上，用高速电子相机扫描照相技术和改进的Mallory实验装置，对z切LiF，Al₂O₃(蓝宝石)和LiTaO₃单晶材料的冲击透光性进行了对比测量，并用黑密度计提取出动态图像定量化的光强对比度变化曲线.结果表明，LiF单晶在102 GPa压强下能够保持长时间的初始透光性不变，与公认的LiF具有优良的高压下透明性的认识一致.LiTaO₃单晶在实验压力(139GPa)下变成基本不透明.而Al_{关键词： 2}O₃')" href="#">Al₂O₃ LiF 3')" href="#">LiTaO₃ 光学透明性