The mechanism of formation of microneedles on the silicon surface in fluorinated plasma via the cyclic etching-deposition process

The mechanism of the formation of microneedles on the silicon surface in SF₆/C₄F₈ plasmas in the two-stage cyclic etching/deposition process is proposed. By means of scanning electron microscopy, it was shown that microneedle growth nuclei are nanosized entities of carbon nanofilaments. They are formed on the Si surface during the reactive ion etching of a fluorocarbon polymer film. As the number of etching/deposition cycles increases, the length of filaments increases and, beginning from a certain cycle, the filaments form a network of the fluorocarbon micromask needed for the formation of microneedles. A simulation of the microneedle formation by means of the hybrid string-cell representation of the profile and the Monte Carlo representation of the particle flux showed satisfactory agreement with the experimental data and the proposed mechanism.     

Polymer film deposition in inductively coupled radio-frequency discharge plasma of perfluorocyclobutane mixed with sulfur hexafluoride

The effect of an SF₆ admixture on the rate of formation and the composition of a polymer film deposited on a substrate in low-pressure inductively coupled radiofrequency (RF) discharge plasma of C₄F₈ + SF₆ under the ion bombardment of the surface was studied. As found by spectroscopic measurements, the relative concentration of CF ₂ ^· and C ₂ ^· radicals increased as the concentration of SF₆ (<40%) in the mixture was increased. As demonstrated using X-ray photoelectron spectroscopy, the F/C ratio in the film decreased with the increasing amount of SF₆ and RF bias power. The mechanism of the ion-enhanced growth of a fluorocarbon film is discussed.     

Fluorine-based plasmas: Main features and application in micro-and nanotechnology and in surface treatment

Fluorine cold plasmas produced by an electrical discharge in SF₆, CF₄, CHF₃ or C₄F₈ gases, principally, have two main fields of application. The first and historical application is etching of materials for microelectronics and later for micro- and nanotechnology. The second concerns the modification of surface properties, mostly in terms of reflectance and wettability. After an introduction to cold plasmas and plasma–surface interaction principles, the article aims at presenting successively the evolution of fluorine plasma etching processes since the origin with respect to other halogen-based routes in microelectronics, the important and raising application in deep etching and microtechnology, and finally some examples in surface treatment.     

DC plasma etching of silicon by sulfur hexafluoride. Mass spectrometric study of the discharge products

Polycrystalline silicon wafers were etched in dc discharges of SF₆. SF_x species were extracted from the discharges and measured with a mass spectrometer. A systematic procedure was used to measure the SF _x ⁺ signals such that they are indicators of events in the discharge close to the sample undergoing etching. The picture that emerges is remarkably simple and shows the relative stability of several SF_x species including SF₆, SF₄, SF₂, and SF which are shown to be extracted from the discharge both in the presence and absence of the silicon sample. When silicon is being etched on the cathode of the discharge cell, the only significant additional products are SiF₄ and S₂F₂. A comparison of blank and sample data for opposite substrate polarities shows that there is only a small cation-assisted etching effect and suggests that ions do not play an important role in the etching of silicon by SF₆ discharges.     

Mechanism of etching and of surface modification of polyimide in RF and LF SF6-O2 discharges

Etch rates of Kapton H polyimide film in SF₆-O₂ plasmas (0.25 torr) were studied as a function of the input gas mixture, the excitation frequency (25–450 kHz; 13.56 MHz), and the biasing mode. The treated surface was examined by X ray photoelectron spectroscopy (ESCA), scanning electron microscopy (SEM), and contact angle measurement. The ion and neutral species of the plasma were sampled and analyzed by mass spectrometry. Etch rates are found to depend on the positive ion flux and the degree of dissociation of neutral molecules. Plasma-treated surfaces are always covered with a deposited material (C_nH_mO_xF_y) which partially obstructs the etching reaction by a masking effect and causes surface roughness. A proposed kinetic analysis of the etching mechanism is in good agreement with the experimental data.     

Surface Interactions of Radicals During Plasma Processing of Polymers

Surface interactions of radical species were investigated using the imaging of radicals interacting with surfaces (IRIS) technique during plasma surface modification of polymers. Three plasma systems were investigated by spatially probing the laser induced fluorescence of individual radical species and determining their surface scattering coefficients, S. The behavior of CF₂ moieties on polymer surfaces was studied using the fluorocarbon plasmas C₂F₆ and hexafluoropropylene oxide (HFPO). Three types of surface interactions were observed, surface generation of CF₂ (S > 1), surface loss of CF₂ (S < 1), and unit scattering (S = 1). Surface loss of CF₂ was seen in HFPO plasmas, while CF₂ was generated in C₂F₆ systems. The differences between these systems is believed to be the result of different overall surface interactions, specifically film deposition in the HFPO system and etching in the C₂F₆ system. Using NH₃ plasmas, the surface interactions of NH₂ radicals with polymers was also investigated. Here, NH₂ is generated at the surface of polyethylene and polytetrafluoroethylene substrates, but is consumed on polyimide substrates. Ion effects were also investigated by placing a grounded mesh in the path of the molecular beam to remove charged species.     

Etching of Silicon Nitride in CCl2F2, CHF3, SiF4, and SF6 Reactive Plasma: A Comparative Study

Silicon nitride is an important material layer in various types of microelectronic devices. Because of continuous integration of devices, patterning of this layer requires a highly selective and anisotropic etching process. Reactive ion etching is one of the most simple and popular plasma processes. The present work is an experimental analysis of primary etch characteristics in reactive ion etching of silicon nitride using chlorine- and/or fluorine-based organic and inorganic chemistries (CCl ₂ F ₂+O ₂ , CHF ₃+O ₂ , SiF ₄ +O₂, SF₆+O ₂ , and SF ₆+He) in order to obtain a simultaneous etch selectivity against polysilicon and silicon dioxide. A recipe, in CCl ₂ F ₂ /O ₂ plasma chemistry, which provides acceptable etch characteristics, along with a reasonable simultaneous selectivity against polysilicon and silicon dioxide, has been formulated.     

Mass spectrometric study of SF6-N2 plasma during etching of silicon and tungsten

The reaction products in the SF₆-N₂ mixture rf plasma during reactive ion etching of Si and W have been measured by a mass spectrometric method. Two kinds of cathode materials were used in this work; they were stainless steel for the Si etching, and SiO₂ for the W etching. The main products detected in the etching experiments of Si and W included SF₄, SF₂, SO₂, SOF₂, SOF₄, SO₂F₂, NSF, NF₃, N₂F₄, N_xS_y, NO₂, and SiF₄. In the W etching with the SiO₂ cathode, additional S₂F₂, N₂O, and WF₆ molecules were also obtained. The formation reactions about the novel NSF compound and the sulfur oxyfuorides were discussed.     

Effect of surface modification on the properties of plasma-polymerized hexamethyldisiloxane thin films

Plasma-polymerized hexamethyldisiloxane (pp-HMDSO) thin films have been deposited in a radiofrequency (RF) remote plasma-enhanced chemical vapor deposition (PECVD) system, on different types of substrates: silicon wafers, glass, quartz crystals, and chemiresistor structure. The as-grown thin films have been post treated in two types of reactive plasmas produced in SF₆ and O₂ gases. The effect of this surface modification on different properties of the as-grown pp-HMDSO thin film (chemical structure, elemental composition, surface morphology, film density and thickness, optical bandgap, and electrical resistivity) has been investigated. It is found that SF₆ plasma and O₂ plasma surface modifications of the as-grown pp-HMDSO thin film induce property changes different from each other. SF₆ plasma converted the as-grown pp-HMDSO film to a more porous material and caused a narrowing of its optical band gap of about 33%, while O₂ plasma induced a lowering of film electrical resistivity of about two orders of magnitude.     

Chemically assisted ion beam etching of silicon and silicon dioxide using SF6

A chemical flux of sulfur hexafluoride (SF₆) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF₆. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching.     

Pentafluorethylschwefeltrifluorid: Synthese und Reaktionen

Pentafluorethyl Sulfurtrifluoride: Synthesis and Reactions By oxidation of (C₂F₅S?)₂ ( 1 ) with AgF₂ at 0°C a mixture of C₂F₅SF₃ ( 2 ) and C₂F₅SF₅ ( 3 ) besides C₂F₅S(O)F ( 4 ) is formed. With elemental fluorine only 3 is isolated, an intermediate in this reaction is (C₂F₅SF₄?)₂ ( 5 ). At ?40 to ?30°C the mixture of 2, 3 and 4 was reacted with TASF and AsF₅, to give TAS⁺ C₂F₅SF₄^? ( 6 ), TAS⁺ C₂F₅S(O)F₂^? ( 7 ) and C₂F₅SF₂⁺AsF₆^? ( 8 ), respectively. While 6 and 7 decompose rapidly in solution even at low temperatures, of thermally stable 8 the solid state structure was determined by x-ray diffraction.     

Plasma fluorination of polystyrene

ESCA and contact-angle measurements were used to characterize the surfaces of polystyrene films exposed to SF₆, CF₄, and C₂F₆ plasmas. SF₆ plasmas cause loss of aromaticity in the polystyrene surface region via saturation of the phenyl ring and/or carbon-bond breakage and subsequent fluorination. C₂F₆ plasmas graft CF_x radicals directly to the polystyrene surface without necessarily destroying the aromaticity of the polymer. CF₄ plasmas appear to be intermediate in character between SF₆ and C₂F₆ plasmas.     

Mechanisms of radical production in CF3Cl,CF3Br,and related plasma etching gases: The role of added oxidants

A model is presented that accounts for the formation of various etchants, unsaturated species, and polymers in halocarbon/oxidant plasma etching mixtures. It is discussed in terms of emission and mass spectral measurements of stable and unstable products in CF₃Cl, CF₃Br, C₂F₆, and related systems. In this reaction scheme, fluorocarbon precursors derived from the building block radical CF₂ are saturated during reactions with atoms and reactive molecules. The most reactive species are preferentially removed by the saturation reactions. An ordering of this reactivity can be used to predict the dominant atomic etchants as a function of halocarbon and additive gas compositions.     

Effects of RF power on BZN thin‐film etching in SF6/Ar using surface analysis

Reactive ion etching (RIE) was used to etch bismuth zinc niobate (BZN) films in SF₆/ Ar plasma as a function of radio frequency (RF) power. Within the RF power range of choice, the etch rate of BZN films increases with increasing RF power. However, when RF power exceeds 200 W, the etch rate of films appears to increase at a slower rate. The structural properties of the BZN films before and after etching were characterized using X‐ray diffraction. As‐deposited film shows a cubic pyrochlore structure with preferential (222) plane orientation, but all the films etched at different reactive ion etching powers exhibit preferential (400) plane orientation. With increasing RF power, the ZnF₂ phase becomes evident. Also, the film surfaces before and after etching were analysed using XPS. Metal fluorides were found to remain on the surface, resulting in varying relative atomic percentages with RF power. Zn‐rich surfaces were formed because low‐volatile ZnF₂ residues were difficult to remove. Bi and Nb can be removed easily through chemical reactions because of their high volatility, whereas Bi–F and Nb–F, which were thought to be present in the form of a metal oxyfluoride, can still be detected using the narrow scan spectra. RF power has an effect on etch reaction through different plasma densities and particle energies, thus resulting in varying compositions and element chemical binding states. RF power also has an effect on the removal of residues. The minimum value of F atomic concentration is achieved at 150 W. Copyright © 2011 John Wiley & Sons, Ltd.     

Electron scattering and dissociative attachment by SF6 and its electrical-discharge by-products

Discrete electron-molecule processes relevant to SF₆ etching plasmas are examined. Absolute, total scattering cross sections for 0.2–12-eV electrons on SF₆, SO₂, SOF₂, SO₂F₂, SOF₄, and SF₄, as well as cross sections for negative-ion formation by attachment of electrons, have been measured. These are used to calculate dissociative-attachment rate coefficients as a function ofE/N for SF₆ by-products in SF₆.     

Arc-Enhanced Plasma Machining Technology for High Efficiency Machining of Silicon Carbide

Atmosphere plasma etching methods have been demonstrated efficient in the etching of fused silica or ULE. However, because of the high chemical stability of silicon carbide (SiC), the conventional plasma etching methods seem incapable of obtaining a high material removal rate (MRR). We have found that MRR will be significantly improved while the electric spark appears between the plasma and the SiC surface. As a result, a new plasma source is designed to generate stable arc at the surface. Due to the generation of arc, the MRR of 0.35 mm³/min is obtained, about 10 times as high as the conventional method. In this paper, the removal characteristics and the thermal effect of this method are presented. MRR and the surface temperature are investigated in dependence on plasma parameters: RF power, travel speed of plasma source, SF₆ gas flow and O₂ gas flow. Due to the negligible thermal effect, the surface figuring can be achieved using the conventional dwell time method. The shape error of a flat SiC surface is corrected, verifying the figuring capability and the effectiveness of this method.     

Mass spectrometer-wall probe diagnostic of Ar discharges containing SF6 and/or O2: Reactive ions in etching plasmas

Positive and negative ions of Ar/SF₆ and Ar/SF₆/O₂ plasmas (etching plasmas) and of Ar/O₂ plasmas (cleaning plasmas) in Pyrex tubes have been investigated using a mass spectrometer-wall probe diagnostic technique. The measurement of negative ions proved to be a very sensitive method for the detection of wall material. In etching plasmas with small admixtures of SF₆, oxygen was found as the only representative of wall material. At larger amounts of SF₆, silicon could be detected. In cleaning plasmas with small admixtures of O₂ applied to a previously etched Pyrex surface, fluorine was found, indicating the reversal of fluoridation by oxygenation.     

Infrared Spectroscopic Analysis of Plasma-Treated Si(100)-Surfaces

 Infrared reflection spectroscopy (specular reflection, attenuated total reflection) has been applied in combination with spectroscopic ellipsometry and electron microscopy to analyze the surface structure of plasma-treated Si(100) surfaces. It is shown that plasma treatments in oxygen and fluorine or chlorine-containing gases cause the formation of a thin surface layer having thicknesses of a few nanometers. The layer was identified to consist of SiO₂ for treatments in an oxygen plasma. Analyses of layers formed by treatments in a fluorine-containing plasma do not confirm the generally assumed model. Different Si-F vibration modes were identified in the surface layer caused by a SF₆ plasma. They correlate, however, with SiF and SiF₂ molecules. There are no indications of the existence of the generally assumed SiF₄. Neither has SiOF₂ been proven in layers produced by etching in a SF₆/O₂ plasma.     

Plasma fluorination of polyolefins

ESCA and contact angle measurements were used to characterize the surfaces of Polyethylene and polypropylene films exposed to SF₆, CF₄, and C₂F₆ plasmas. None of these gases polymerized in the plasma. However, all plasma treatments grafted fluorinated functionalities directly to the polymer surfaces. SF₆ plasmas graft fluorine atoms to a polyolefin surface. CF₄ plasmas also react by a mechanism dominated by fluorine atoms, but with some contribution from CF_x-radical reactions. Although C₂F₆ does not polymerize, the mechanism of grafting is still dominated by the reactions of CF_x radicals. For all gases studied, the lack of polymerization is attributed to competitive ablation and polymerization reactions occurring under conditions of ion bombardment.     

Fundamental aspect and behavior of saturated fluorocarbons in glow discharge in absence of potential source of hydrogen

The glow discharge of a series of saturated fluorocarbons, C_nF_2n+2 (n = 1, 2, 4, 6, and 8), was studied with glass substrates which do not contain any hydrogen. It was found that the deposition rate was a function of the F/C ratio of the starting fluorocarbons. That is, fluorocarbons with higher F/C ratio, such as CF₄ and C₂F₆, hardly polymerized, while fluorocarbons with lower F/C ratio, such as C₈F₁₈, polymerized as well as C₂F₄. After plasma exposure, the surface of glass substrate was characterized by measurements of water contact angle, water droplet rolling-off angle, and ESCA. Although all saturated fluorocarbon plasmas could alter the surface more hydrophobic than before, the deposited materials from fluorocarbons with higher F/C were not stable. Also, in plasmas with high F/C fluorocarbons, i.e., CF₄ and C₂F₆, sputtering of the electrode material was observed. © 1992 John Wiley & Sons, Inc.