Role of water in the atomic layer deposition of TiO(2) on SiO(2)

Atomic layer deposition (ALD) of TiO(2) on SiO(2) powder using sequential addition of TiCl(4) and H(2)O vapors has been investigated by infrared spectroscopy. In the first cycle, TiCl(4) reacts monofunctionally or bifunctionally with surface silanols forming (Si-O-)(n)Ti-Cl(4)(-)(n) (n = 1, 2) species. Subsequent addition of water vapor leads to the hydrolysis of the (Si-O-)(n)Ti-Cl(4)(-)(n) to form a Ti-O-Ti network, and at the same time, some cleavage of Si-O-Ti bonds occurs, regenerating Si-OH in the process. It is shown that the species formed on the surface in the first TiCl(4) dose are temperature dependent. However, after addition of H(2)O vapor, the amount of TiO(2) deposited in the first complete cycle is independent of reaction temperature. In the second and above cycles, the amount of TiO(2) deposited as a function of ALD cycles strongly correlates with the amount of water on the surface. This, in turn, led to a temperature dependence of the growth rate of the TiO(2) per cycle.     

Atomic/molecular layer deposited thin-film alloys of Ti-4,4'-oxydianiline hybrid-TiO(2) with tunable properties

By combining atomic layer deposition (ALD) and molecular layer deposition (MLD) thin-film techniques, the latter being a variant of the former in which organic precursors are used, it is possible to deposit thin films containing precisely controlled portions of inorganic and organic constituents. This in turn enables the adjustment of material properties by changing the number of ALD and MLD cycles applied during the deposition. In this work, the properties of such thin-film "alloys" prepared by varying the portions of Ti-4,4'-oxydianiline (Ti-ODA) inorganic-organic hybrid and TiO(2) in the structure were investigated. The films were deposited at 280 °C using TiCl(4) and water as precursors for TiO(2), and TiCl(4) and ODA for the Ti-ODA hybrid. The results demonstrate excellent tunability of the film properties such as degree of crystallinity, roughness, refractive index, and hardness depending on the relative number of TiO(2) and Ti-ODA cycles employed.     

The effect of Al2O3 barrier layers in TiO2/dye/CuSCN photovoltaic cells explored by recombination and DOS characterization using transient photovoltage measurements

Solid-state dye-sensitized solar cells of the type TiO(2)/dye/CuSCN have been made with thin Al(2)O(3) barriers between the TiO(2) and the dye. The Al(2)O(3)-treated cells show improved voltages and fill factors but lower short-circuit currents. Transient photovoltage and photocurrent measurements have been used to find the pseudo-first-order recombination rate constant (k(pfo)) and capacitance as a function of potential. Results show that k(pfo) is dependent on V(oc) with the same form as in TiO(2)/dye/electrolyte cells. The added Al(2)O(3) layer acts as a "tunnel barrier", reducing the k(pfo) and thus increasing V(oc). The decrease in k(pfo) also results in an increased fill factor. Capacitance vs voltage plots show the same curvature (approximately 150 mV/decade) as found in TiO(2)/dye/electrolyte cells. The application of one Al(2)O(3) layer does not cause a significant shift in the shape or position of the capacitance curve, indicating that changes in band offset play a lesser role in the observed V(oc) increase. Cells made with P25 TiO(2) have, on average, 2.5 times slower recombination rate constants (longer lifetimes) than those made with colloidal TiO(2). The cells with P25 also show 2.3 times higher trap density (DOS), which results in little change in the V(oc) between the two types of TiO(2). It is further noted that the recombination current in these cells cannot be calculated from the total charge times the first order rate constant.     

Atomic layer deposition of TiO2 from TiI4 and H2O onto SiO2 surfaces: ab initio calculations of the initial reaction mechanisms

The initial surface reactions involved in the atomic layer deposition (ALD) of TiO2 from TiI4 and H2O onto a SiO2 substrate have been investigated using electronic structure calculations based on cluster models. The detailed atomic growth mechanisms on different types of functionalities on the SiO2 substrate have been proposed. The effects of quantum tunneling and hindered rotations of adsorbates on the rate of surface reactions have been investigated. The effects of tunneling were found to be negligible for all reactions, because typical ALD temperatures range from 150 to 450 degrees C. However, the rotational contributions to the rate constants must be taken into account in certain cases. All of the three surface functionalities investigated exhibit high chemical reactivity toward TiI4 precursors at typical ALD temperatures. The rate constants of the second half-reactions between Ti intermediates and H2O are 5-8 orders of magnitude smaller than the first half-reactions between TiI4 and the surface functionalities. Although the iodine release reaction has been used to explain previous experimental measurements, it is predicted to be unfavorable (kinetically and thermodynamically) and is unlikely to occur at typical ALD temperatures. Substitution of TiI4 with TiCl4 as the metal precursor can increase the binding energies of the absorbates onto the surface due to the high electronegativity of the Cl ligands. However, the activation barriers are not significantly different between these two metal precursors. More importantly, our calculations predict that TiI4 precursors tend to produce TiO2 films with fewer impurities than the TiCl4 precursors.     

Control of charge recombination dynamics in dye sensitized solar cells by the use of conformally deposited metal oxide blocking layers

We report herein a methodology for conformally coating nanocrystalline TiO2 films with a thin overlayer of a second metal oxide. SiO2, Al2O3, and ZrO2 overlayers were fabricated by dipping mesoporous, nanocrystalline TiO2 films in organic solutions of their respective alkoxides, followed by sintering at 435 degrees C. These three metal oxide overlayers are shown in all cases to act as barrier layers for interfacial electron transfer processes. However, experimental measurements of film electron density and interfacial charge recombination dynamics under applied negative bias were vary significantly for the overlayers. A good correlation was observed between these observations and the point of zero charge of the different metal oxides. On this basis, it is found that the most basic overlayer coating, Al2O3 (pzc = 9.2), is optimal for retarding interfacial recombination losses under negative applied bias. These observations show good correlation with current/voltage analyses of dye sensitized solar cell fabricated from these films, with the Al2O3 resulting in an increase in V(oc) of up to 50 mV and a 35% improvement in overall device efficiency. These observations are discussed and compared with an alternative TiCl4 posttreatment of nanocrystalline TiO2 films with regard to optimizing device efficiency.     

In situ reaction mechanism studies on the atomic layer deposition of Al2O3 from (CH3)2AlCl and water

Reaction mechanisms between dimethylaluminum chloride and deuterated water in the atomic layer deposition (ALD) of Al2O3 were studied at 150-400 degrees C using a quartz crystal microbalance (QCM) and a quadrupole mass spectrometer (QMS). The observed reaction byproducts were DCl and CH3D. QMS showed that about one-third of the chlorine, and half of the methyl ligands were released during the (CH3)2AlCl pulse. The growth rate deduced from the QMS and QCM data was in qualitative agreement with the previously published growth rate from ALD film growth experiments.     

Double-layer coating of SrCO3/TiO2 on nanoporous TiO2 for efficient dye-sensitized solar cells

Surface modification plays a crucial role in improving the efficiency of dye-sensitized solar cells (DSSCs), but the reported surface treatments are in general superior to the untreated TiO(2) but inferior to the typical TiCl(4)-treated TiO(2) in terms of solar cell performance. This work demonstrates a two-step treatment of the nanoporous titania surface with strontium acetate [Sr(OAc)(2)] and TiCl(4) in order, each step followed by sintering. An electronically insulating layer of SrCO(3) is formed on the TiO(2) surface via the Sr(OAc)(2) treatment and then a fresh TiO(2) layer is deposited on top of the SrCO(3) layer via the TiCl(4) treatment, corresponding to a double layer of Sr(OAc)(2)/TiO(2) coated on the TiO(2) surface. As compared to the typical TiCl(4)-treated DSSC, the Sr(OAc)(2)-TiCl(4) treated DSSC improves short-circuit photocurrent (J(sc)) by 17%, open-circuit photovoltage (V(oc)) by 2%, and power conversion efficiency by 20%. These results indicate that the Sr(OAc)(2)-TiCl(4) treatment is better than the often used TiCl(4) treatment for fabrication of efficient DSSCs. Charge density at open circuit and controlled intensity modulated photocurrent/photovoltage spectroscopy reveal that the two electrodes show almost same conduction band level but different electron diffusion coefficient and charge recombination rate constant. Owing to the blocking effect of the SrCO(3) layer on electron recombination with I(3)(-) ions, the charge recombination rate constant of the Sr(OAc)(2)-TiCl(4) treated DSSC is half that of the TiCl(4)-treated DSSC, accounting well for the difference of their V(oc). The improved J(sc) is also attributed to the middle SrCO(3) layer, which increases dye adsorption and may improve charge separation efficiency due to the blocking effect of SrCO(3) on charge recombination.     

Initial surface reactions of TiO2 atomic layer deposition onto SiO2 surfaces: density functional theory calculations

We present a density functional theory (DFT) study of the initial surface reactions of TiO2 deposition onto a SiO2 substrate using atomic layer deposition (ALD). The precursors for the deposition process were chosen to be TiCl4 and H2O, and several cluster models were used for the SiO2 substrate. We predict the activation barriers, transition states, and reaction pathways of the surface reactions, and we investigate the effect of surface heterogeneity (such as the presence of siloxane bridges) on the reactivity of the SiO2 surface. Our study suggests that the concentration and arrangement of different reactive groups on the substrate will strongly dictate the process of film growth during ALD, including the film morphology and the growth rate.     

Surface chemistry in the atomic layer deposition of TiN films from TiCl4 and ammonia

The surface chemistry of atomic layer depositions (ALD) of titanium nitride films using alternate doses of TiCl4 and NH3 was characterized by using X-ray photoelectron spectroscopy. The nature of the species deposited by each half-reaction was explored first. Evidence was obtained for the partial loss of chlorine atoms and the reduction of the metal during the adsorption of the TiCl4. Subsequent ammonia treatment removes most of the remaining chlorine and leads to the formation of a nitride. Both half-reactions were proven self-limited, stopping after the deposition of submonolayer quantities of the materials. Repeated ALD cycles were shown to lead to the buildup of thick films. However, those films display a Ti3N4 layer on top of the expected TiN. The data suggest that the reduction of the Ti4+ species may therefore occur during the TiCl4, not NH3, dosing step. The incorporation of impurities in the films was also investigated. Chlorine is only deposited on the surface, and in negligible quantities. This Cl appears to originate from readsorption of the HCl byproduct, and could be removed by light sputtering, heating, or further ammonia treatment. Oxygen incorporation, on the other hand, was unavoidable and was determined to possibly come from diffusion from the underlying substrate.     

Influence of surface temperature on the mechanism of atomic layer deposition of aluminum oxide using an oxygen plasma and ozone

We have examined the role of substrate temperature on the surface reaction mechanisms during the atomic layer deposition (ALD) of Al(2)O(3) from trimethyl aluminum (TMA) in combination with an O(2) plasma and O(3) over a substrate temperature range of 70-200 °C. The ligand-exchange reactions were investigated using in situ attenuated total reflection Fourier transform infrared spectroscopy. Consistent with our previous work on ALD of Al(2)O(3) from an O(2) plasma and O(3) [Rai, V. R.; Vandalon, V.; Agarwal, S. Langmuir 2010, 26, 13732], both -OH groups and carbonates were the chemisorption sites for TMA over the entire temperature range explored. The concentration of surface -CH(3) groups after the TMA cycle was, however, strongly dependent on the surface temperature and the type of oxidizer, which in turn influenced the corresponding growth per cycle. The combustion of surface -CH(3) ligands was not complete at 70 °C during O(3) exposure, indicating that an O(2) plasma is a relatively stronger oxidizing agent. Further, in O(3)-assisted ALD, the ratio of mono- and bidentate carbonates on the surface after O(3) exposure was dependent on the substrate temperature.     

Ti-doped LiAlH4 for hydrogen storage: synthesis, catalyst loading and cycling performance

The direct synthesis of LiAlH(4) from commercially available LiH and Al powders in the presence of TiCl(3) and Me(2)O has been achieved for the first time. The effects of TiCl(3) loadings (Ti/Al = 0, 0.01, 0.05, 0.2, 0.5, 1.0 and 2.0%) and various other additives (TiCl(3)/Al(2)O(3), metallic Ti, Nb(2)O(5), and NbCl(5)) on the formation and stability of LiAlH(4) have been systematically investigated. The yield of LiAlH(4) initially increases, and then decreases, with increasing TiCl(3) loadings. LiH + Al → LiAlH(4) yields above 95% were obtained when the molar ratios of Ti/Al were 0.05 and 0.2%. In the presence of a very tiny amount of TiCl(3) (Ti/Al = 0.01%), LiAlH(4) is still generated, but the yield is lower. In the complete absence of TiCl(3), LiAlH(4) does not form. Addition of metallic Ti, Nb(2)O(5), and NbCl(5) to commercial LiH and Al does not result in the formation of LiAlH(4). Preliminary tests show that TiCl(3)-doped LiAlH(4) can be cycled, making it a suitable candidate for hydrogen storage.     

GaN nanowire functionalized with atomic layer deposition techniques for enhanced immobilization of biomolecules

We report the use of atomic layer deposition (ALD) coating as a nanobiosensor functionalization strategy for enhanced surface immobilization that may enable higher detection sensitivity. Three kinds of ALD coating films, Al(2)O(3), TiO(2), and SiO(2), were grown on the gallium nitride nanowire (GaN NW) surfaces and characterized with high-resolution transmission electron microscopy (HRTEM) and vacuum Fourier transform infrared spectroscopy (FTIR). Results from HRTEM showed that the thicknesses of ALD-Al(2)O(3), ALD-TiO(2) and ALD-SiO(2) coatings were 4-5 nm, 5-6 nm, and 12-14 nm, respectively. Results from FTIR showed that the OH contents of these coatings were, respectively, ～6.9, ～7.4, and ～9.3 times that of piranha-treated GaN NW. Furthermore, to compare protein attachments on the different surfaces, poly(ethylene glycol) (PEG)-biotin was grafted on the OH-functionalized GaN NW surfaces through active Si-Cl functional groups. Streptavidin protein molecules were then attached to the biotin ends via specific binding. The immobilized streptavidin molecules were examined with scanning electron microscopy, HRTEM, and fluorescent imaging. Results from HRTEM and energy-dispersive X-ray revealed that the nitrogen concentrations on the three ALD coatings were significantly higher than that on the piranha-treated surface. Results from fluorescent imaging further showed that the protein attachments on the Al(2)O(3), TiO(2), and SiO(2) ALD coatings were, respectively, 6.4, 7.8, and 9.8 times that of piranha-treated surface. This study demonstrates that ALD coating can be used as a functionalization strategy for nanobiosensors because it is capable of creating functional groups with much higher density compared to widely used acid modifications, and among the three ALD coatings, ALD-SiO(2) yielded the most promising results in OH content and protein attachment.     

Effect of atomic layer deposition coatings on the surface structure of anodic aluminum oxide membranes

Anodic aluminum oxide (AAO) membranes were characterized by UV Raman and FT-IR spectroscopies before and after coating the entire surface (including the interior pore walls) of the AAO membranes by atomic layer deposition (ALD). UV Raman reveals the presence of aluminum oxalate in bulk AAO, both before and after ALD coating with Al2O3, because of acid anion incorporation during the anodization process used to produce AAO membranes. The aluminum oxalate in AAO exhibits remarkable thermal stability, not totally decomposing in air until exposed to a temperature >900 degrees C. ALD was used to cover the surface of AAO with either Al2O3 or TiO2. Uncoated AAO have FT-IR spectra with two separate types of OH stretches that can be assigned to isolated OH groups and hydrogen-bonded surface OH groups, respectively. In contrast, AAO surfaces coated by ALD with Al2O3 display a single, broad band of hydrogen-bonded OH groups. AAO substrates coated with TiO2 show a more complicated behavior. UV Raman results show that very thin TiO2 coatings (1 nm) are not stable upon annealing to 500 degrees C. In contrast, thicker coatings can totally cover the contaminated alumina surface and are stable at temperatures in excess of 500 degrees C.     

原位聚合制备聚乙烯/蒙脱土(MMT)纳米复合材料的研究

利用MgCl₂在醇中溶解和蒙脱土(MMT)在醇中层间膨胀的特性,制备了MgCl₂/TiC_l4负载于MMT层间的MMT/MgCl₂/TiC_l4催化剂,并通过原位聚合合成了聚乙烯/蒙脱土纳米复合材料.经广角X射线衍射(WAXD)和透射电子显微镜(TEM)分析表明,蒙脱土片层在乙烯聚合过程中发生了层间剥离,以单片层或几片层共存的形式无规地分散于聚乙烯基质中.与分子量相近的纯聚乙烯相比,极低的蒙脱土含量(质量分数<1%)能使复合材料的屈服强度、拉伸强度和拉伸模量有很大提高.复合材料中蒙脱土片层以纳米尺寸在聚乙烯基质中的良好分布和对聚乙烯分子链运动的限制作用是力学性能提高的主要因素.     

ZnO-Al2O3 and ZnO-TiO2 core-shell nanowire dye-sensitized solar cells

We describe the construction and performance of dye-sensitized solar cells (DSCs) based on arrays of ZnO nanowires coated with thin shells of amorphous Al(2)O(3) or anatase TiO(2) by atomic layer deposition. We find that alumina shells of all thicknesses act as insulating barriers that improve cell open-circuit voltage (V(OC)) only at the expense of a larger decrease in short-circuit current density (J(SC)). However, titania shells 10-25 nm in thickness cause a dramatic increase in V(OC) and fill factor with little current falloff, resulting in a substantial improvement in overall conversion efficiency, up to 2.25% under 100 mW cm(-2) AM 1.5 simulated sunlight. The superior performance of the ZnO-TiO(2) core-shell nanowire cells is a result of a radial surface field within each nanowire that decreases the rate of recombination in these devices. In a related set of experiments, we have found that TiO(2) blocking layers deposited underneath the nanowire films yield cells with reduced efficiency, in contrast to the beneficial use of blocking layers in some TiO(2) nanoparticle cells. Raising the efficiency of our nanowire DSCs above 2.5% depends on achieving higher dye loadings through an increase in nanowire array surface area.     

Epitaxial growth of single-crystalline Al(2)O(3) films on Cr(2)O(3)(0001)

Thin, crystallographically oriented single-crystalline Al2O3 films can be grown epitaxially on Cr2O3(0001) by codeposition of Al vapor and O2 at a substrate temperature of 825 K. The properties and growth of these films were monitored by Auger electron spectroscopy (AES), low-energy electron diffraction (LEED), low-energy ion scattering (LEIS), and X-ray photoelectron spectroscopy (XPS). Two routes of preparation were investigated: (i) stepwise growth by alternating deposition of Al at room temperature and subsequent exposure to O2 at elevated temperatures; (ii) codeposition of Al and O2 at T > 800 K. The first route was consistently found to result in the growth of a complex interfacial oxide followed by the growth of polycrystalline Al2O3. The second mode of preparation provided homogeneous and ordered, probably (0001)-oriented, films of Al2O3 that maintained a LEED pattern up to a thickness around 10 A. The surface sensitive Cr MVV Auger transition at 34 eV was completely attenuated once the Al2O3 layer had reached a thickness of 6 A, pointing to film homogeneity at an early stage. This was confirmed by the absence of a significant Cr signal in LEIS spectra.     

TiO2-Al2O3作为Mo催化剂担体的研究

Tio。－AI。oa二元氧化物的制备at艺大体可分为两种．一种是利用液相浸渍或气相沉积方法将Tio。担载在AI。0。上，使Tio。主要覆盖在AI。0。表面上［‘－1另一种是通过Ti盐和AI盐混合溶液共沉淀方法使Tio。和AI。0。均匀混合在一起【‘－’1．不同的制备工艺对Tio。－AI。03的表面结构和表面性质有很大影响问．我们曾报导用TICly蒸气化学气相沉积方法制备出了D02在1川2O3表面呈现十分均匀分布的DoZ一周。03复合氧化物担体＊’1．本文进一步考察D0。在周。0。表面的沉积对川。0。孔结构的影响，以及Ti02－A1203作为加氢精制MO催…     

Incorporating Zn(2) SnO(4) Quantum Dots and Aggregates for Enhanced Performance in Dye-Sensitized ZnO Solar Cells

The performance of dye-sensitized ZnO solar cells was improved by a facile surface-treatment approach through chemical-bath deposition. After the surface treatment, the quantum dots of Zn(2) SnO(4) were deposited onto ZnO nanoparticles accompanied by the aggregations of Zn(2) SnO(4) nanoparticles. The ZnO film displayed a better resistance to acidic dye solution on account of the deposited Zn(2) SnO(4) nanoparticles. Meanwhile, the open-circuit photovoltage was greatly enhanced, which can be ascribed to the increased conduction-band edge of ZnO and inhibited interfacial charge recombination. Although the deposition of Zn(2) SnO(4) decreased the adsorption amounts of N719 dye, the aggregates of Zn(2) SnO(4) with a size of 350-450?nm acted as the effective light-scattering layer, thereby resulting in an improved short-circuit photocurrent. By co-sensitizing 10?μm-thick ZnO film with N719 and D131 dyes, a top efficiency of 4.38?% was achieved under the illumination of one sun (AM?1.5, 100?mW?cm(-2) ).     

ZrO2在Si(100)-2×1表面原子层淀积反应机理的密度泛函理论研究

用密度泛函方法研究了ZrO₂在羟基预处理的Si(100)-2×1表面原子层淀积(ALD)初始反应过程的反应机理, ZrO₂的ALD过程包括两个前体反应物ZrCl₄和H₂O交替的半反应. 两个半反应都经历一个相似的吸附中间体反应路径. 比较单羟基Si表面反应的反应焓变, 可以发现双羟基Si表面反应, 由于相邻羟基的存在, 对ZrCl₄的半反应影响较大, 尤其是化学吸附能增加明显. 而对于H₂O的半反应, 单、双羟基Si表面反应的能量变化不是很明显. 使用内禀反应坐标(IRC)方法, 验证了两个半反应存在相似的过渡态结构和反应机理. 另外, 发现随着温度的升高, 吸附络合物的稳定性降低, 其向反应物方向的解吸附变得容易, 而向产物方向的解离难度增加.     

Control of dark current in photoelectrochemical (TiO2/I--I3-)) and dye-sensitized solar cells

The ruthenium complex bis-tetrabutylammonium cis-dithiocyanato-N,N'-bis-2,2'-bipyridine-4-carboxylic acid, 4'-carboxylate ruthenium(II), N-719, was found to block the dark current of dye sensitized solar cells (DSC), based on mesoporous TiO2 films deposited on a F-doped tin oxide electrode and the effect was compared to surface treatment by TiCl4 and the introduction of a compact TiO2 blocking layer.