Limits on light emission from silicon

Although silicon is an indirect semiconductor, light emission from silicon is governed by the same gener- alized Planck＇s radiation law as the emission from direct semiconductors. The emission intensity is given by the absorptance of the volume in which there is a difference of the quasi Fermi energies. A difference of the Fermi energies may result h＇om the absorption of external light （photoluminescence） or from the injection of electrons and holes via selective contacts （electroluminescence）. The quantum efficiency may be larger than 0.5 for carrier densities below 10^15 cm^-3. At larger densities, non-radiative recombination, in particular Auger recombination dominates. At all carrier densities, the relation between emission intensity and difference of the quasi Fermi energies is maintained. Since this difference is equal to the voltage of a properly designed solar cell, luminescence is the key indicator of material quality for solar cells.     

Efficient above-band-gap light emission in germanium Invited Paper

We report an above-band-gap radiative transition in the photoluminescence spectra of single crystalline Ge in the temperature range of 20-296 K. The temperature-independence of the peak position at ～0.74 eV is remarkably different from the behavior of direct and indirect gap transitions in Ge. This transition is observed in n-type, p-type, and intrinsic single crystal Ge alike, and its intensity decreases with the increase of temperature with a small activation energy of 56 meV. Some aspects of the transition are analogous to Ⅲ-Ⅴ semiconductors with dilute nitrogen doping, which suggests that the origin could be related to an isoelectronic defect.     

Hybrid silicon modulators Invited Paper

A number of active elements have been demonstrated using the hybrid silicon evanescent platform, includ- ing lasers, amplifiers, and detectors. In this letter, two types of hybrid silicon modulators, fulfilling the building blocks in optical communication on this platform, are presented. A hybrid silicon electroabsorp-tion modulator, suitable for high speed interconnects, with 10-dB extinction ratio at -5 V and 16-GHz modulation bandwidth is demonstrated. In addition, a hybrid silicon Mach-Zehnder modulator utilizing carrier depletion in multiple quantum wells is proved with 2 V.mm voltage-length product, 150-nm optical bandwidth, and a large signal modulation up to 10 Gb/s.     

Silicon nanocrystals to enable silicon photonics Invited Paper

Low dimensional silicon, where quantum size effects play significant roles, enables silicon with new photonic functionalities. In this short review, we discuss the way that silicon nanocrystals are produced, their optoelectronic properties and a few device applications. We demonstrate that low dimensional silicon is an optimum material for developing silicon photonics.     

Defect-related light emission from processed He-implanted silicon

Photoluminescence (PL) from He⁺-implanted Si (Si:He, He⁺ dose—2×10¹⁶ cm⁻², at 150 keV) is related to its microstructure; it has been tuned by processing at 720-1400 K under hydrostatic Ar pressure (HP, up to 1.2 GPa). Processing of Si:He at 720 K for 10 h results in an appearance of the D2 and D3 dislocation-related PL lines, these last of the highest intensity. Only the D1 dislocation-related line of intensity increasing with HP has been detected after processing at 920-1070 K. The D1 (of the highest intensity), D2 and D3 PL lines are observed after the treatment at 1270 K. No dislocation-related PL has been detected for Si:He processed at 1400 K. The treatment of Si:He at 720-1270 K under HP makes it possible to produce Si:He of specific microstructure resulting in strong PL at 0.81, 0.87 or 0.94 eV.     

Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper

Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent progress of the direct epitaxy and fabrication of quantum dot (QD) lasers and integrated guided-wave devices on silicon. This approach involves the development of molecular beam epitaxial growth of selforganized QD lasers directly on silicon substrates and their monolithic integration with amorphous silicon waveguides and quantum well electroabsorption modulators. Additionally, we report a preliminary study of long-wavelength (> 1.3 μm) QD lasers grown on silicon and integrated crystalline silicon waveguides using membrane transfer technology.     

Efficient light emission from crystalline and amorphous silicon nanostructures

Optical and electronic properties of crystalline silicon (c-Si) and amorphous silicon (a-Si) nanostructures are reviewed. The photoluminescence (PL) peak energies of c-Si and a-Si nanostructures are blueshifted from those of bulk c-Si and a-Si. The temperature dependence of the PL intensity is drastically improved in c-Si and a-Si nanostructures, and efficient luminescence from c-Si and a-Si nanostructures is observed at room temperature. The quantum confinement, spatial confinement, and surface effects on luminescence properties are summarized and the PL mechanism of silicon nanostructures is discussed.     

Broad band light emission from Ag-ion implanted silicon nanocrystals

Silicon nanoparticles formed using low energy (<50 keV) silver ion implantation in crystalline Si exhibit broad band light emission from ultraviolet (UV) to green. The formation of nanoparticles is confirmed using high resolution electron microscopy (HRTEM) and the resulting microscopy is used to obtain the size distribution of Si nanoparticles. Photoluminescence (PL) spectra were observed in the range of the UV to the green. The origin of emission is most likely from highly localized defects at the Si/SiO2 which is further confirmed from Photoluminescence Excitation (PLE) and effective mass theory estimation.     

Double-notch-shaped microdisk resonator devices with gapless coupling on a silicon chip Invited Paper

We propose novel double-notch-shaped microdisk resonator-based devices with gapless waveguide-to- microdisk and inter-cavity coupling via the two notches of the microdisk. Both finite-difference time- domain simulations and experimental demonstrations reveal the high-quality-factor multimode resonances in such microdisks. Using such double-notch microdisk resonators, we experimentally demonstrate the many-element linearly cascaded-microdisk resonator devices with up to 50 elements on a silicon chip.     

Metal-dielectric-metal plasmonic waveguide devices for manipulating light at the nanoscale Invited Paper

We review some of the recent advances in the development of subwavelength plasmonic devices for ma- nipulating light at the nanoscale, drawing examples from our own work in metal-dielectric-metal (MDM) plasmonic waveguide devices. We introduce bends, splitters, and mode converters for MDM waveguides with no additional loss. We also demonstrate that optical gain provides a mechanism for on/off switch- ing in MDM plasmonie waveguides. Highly efficient compact couplers between dielectric waveguides and MDM waveguides are also introduced.     

Advances in quantum dots for classical and non-classical light sources Invited Paper

Recent advances in quantum dots (QDs) for classical and non-classical light sources are presented. We have established metal organic chemical vapor deposition (MOCVD) technology for InAs-based QD lasers at 1.3 μm and achieved ultralow threshold in QD lasers with photonic crystal (PhC) nanocavity. In addition, single photon emitters at 1.55/μm, GaN-based single photon sources operating at 200 K, and high-Q PhC nanocavity have been demonstrated.     

Generation of three-dimensional versatile vortex linear light bullets(Invited Paper)

We generate and measure the versatile vortex linear light bullet,which combines a high-order Bessel beam and an Airy pulse.This three-dimensional optical wave packet propagates without distortion in any medium,while carrying an orbital angular momentum.Its non-varying feature in linear propagation is verified by a threedimensional measurement.Such a novel versatile linear light bullet can be useful in various applications such as micromachining.     

Absorption and emission of light in spark-processed silicon

Spark-processed Si (sp-Si) exhibits blue, green and red photoluminescence at around 385, 525 and 650 nm, depending on the wavelength of excitation. Its optical absorption spectrum reveals bands peaked approximately at 245, 277, 325 and 389 nm. The centers where absorption takes place were modeled as Si and silica clusters in an amorphous SiO_xN_y matrix using various embedding schemes. Geometry optimizations were applied prior to calculations of the absorption spectra of the clusters. The measured absorption spectrum of sp-Si and calculated absorption spectra were compared. Best agreement is achieved for Si particles embedded in amorphous SiO_xN_y matrix. The importance of the various embedding schemes is discussed and conclusions for the centers of emission are established.     

Annealing and amorphous silicon passivation of porous silicon with blue light emission

The photoluminescence (PL) of the annealed and amorphous silicon passivated porous silicon with blue emission has been investigated. The N-type and P-type porous silicon fabricated by electrochemical etching was annealed in the temperature range of 700-900 °C, and was coated with amorphous silicon formed in a plasma-enhanced chemical vapor deposition (PECVD) process. After annealing, the variation of PL intensity of N-type porous silicon was different from that of P-type porous silicon, depending on their structure. It was also found that during annealing at 900 °C, the coated amorphous silicon crystallized into polycrystalline silicon, which passivated the irradiative centers on the surface of porous silicon so as to increase the intensity of the blue emission.     

Strong white light emission from a processed porous silicon and its photoluminescence mechanism

We have prepared various porous silicon (PS) structures with different surface conditions (any combination of oxidation, carbonization as well as thermal annealing) to increase the intensity of photoluminescence (PL) spectrum in the visible range. Strong white light (similar to day-light) emission was achieved by carrying out thermal annealing at 1100 °C after surface modification with 1-decene of anodic oxidized PS structures. Temperature-dependent PL measurements were first performed by gradually increasing the sample temperature from 10 to 300 K inside a cryostat. Then, we analyzed the measured spectrum of all prepared samples. After the analysis, we note that throughout entire measured spectrum, only two main peaks corresponding to blue and green-orange emission lines (which can be interpreted by quantum size effect and/or configuration coordinate model) were seem to be predominant for all temperature range. To further reveal and analysis these peaks, finally, measured data were inputted into the formula of activation energy of thermal excitation. We found that activation energies of blue and green-orange lines were approximately 49.3 and 44.6 meV, respectively.     

Si-based materials and devices for light emission in silicon

We report on the fabrication and performances of extremely efficient Si-based light sources. The devices consist of MOS structures with erbium (Er) implanted in the thin gate oxide. The devices exhibit strong 1.54 μm electroluminescence (EL) at 300 K with a 10% external quantum efficiency, comparable to that of standard light-emitting diodes using III–V semiconductors. Er excitation is caused by hot electrons impact and oxide wearout limits the reliability of the devices. Much more stable light-emitting MOS devices have been fabricated using Er-doped silicon rich oxide (SRO) films as gate dielectric. These devices show a high stability, with an external quantum efficiency reduced to 1%. In these devices, Er pumping occurs by energy transfer from the Si nanostructures to the rare-earth ions. Finally, we have also fabricated MOS structures with Tb- and Yb-doped SiO₂ which show room temperature EL at 540 nm (Tb) and 980 nm (Yb) with an external quantum efficiency of a 10% and 0.1%, respectively.     

Secondary ion emission from silicon and silicon oxide

The emission of Si⁺, Si²⁺, Si³⁺, Si₂⁺, SiO⁺ and B⁺ from boron doped silicon has been studied at oxygen partial pressures between 2 × 10^?10 and 2 × 10^?5 Torr. Sputtering was done with 2 to 15 keV argon ions at current densities between 3 and $\text{40}\text{μ}\text{A}\text{cm}{}^2$. The relative importance of the different ionization processes could be deduced from a detailed study of the yield variation at varying bombardment conditions. Comparison with secondary ion emission from silicon dioxide allows a rough determination of the composition of oxygen saturated silicon surfaces.     

Lensless Vanderlugt optical correlator using two phase-only spatial light modulators（Invited Paper）

A lensless Vanderlugt optical correlator using two phase-only spatial light modulators （SLMs） is proposed. The SLMs are used for displaying input and filter patterns respectively. The SLMs are also used as programmable lenses in order to realize the lensless construction. This lensless system is simple and its alignment adjustment is easy. The performance of the SLMs as programmable lenses is also described.     

Slow and fast light in quantum-well and quantum-dot semiconductor optical amplifiersInvited Paper

Slow and fast light in quantum-well (QW) and quantum-dot (QD) semiconductor optical amplifiers (SOAs) using nonlinear quantum optical effects are presented. We demonstrate electrical and optical controls of fast light using the coherent population oscillation (CPO) and four wave mixing (FWM) in the gain regime of QW SOAs. We then consider the dependence on the wavelength and modal gain of the pump in QW SOAs. To enhance the tunable photonic delay of a single QW SOA, we explore a serial cascade of multiple amplifiers. A model for the number of QW SOAs in series with variable optical attenuation is developed and matched to the experimental data. We demonstrate the scaling law and the bandwidth control by using the serial cascade of multiple QW SOAs. Experimentally, we achieve a phase change of 160° and a scaling factor of four at 1 GHz using the cascade of four QW SOAs. Finally, we investigate CPO and FWM slow and fast light of QD SOAs. The experiment shows that the bandwidth of the time delay as a function of the modulation frequency changes in the absorption and gain regimes due to the carrier-lifetime variation. The tunable phase shift in QD SOA is compared between the ground- and first excited-state transitions with different modal gains.