Validity of reciprocity rule on mouse skin thermal damage due to CO2 laser irradiation

CO₂ laser (10.6 μm) is a well-known infrared coherent light source as a tool in surgery. At this wavelength there is a high absorbance coefficient (860 cm^?1), because of vibration mode resonance of H₂O molecules. Therefore, the majority of the irradiation energy is absorbed in the tissue and the temperature of the tissue rises as a function of power density and laser exposure duration. In this work, the tissue damage caused by CO₂ laser (1–10 W, ～40–400 W cm^?2, 0.1–6 s) was measured using 30 mouse skin samples. Skin damage assessment was based on measurements of the depth of cut, mean diameter of the crater and the carbonized layer. The results show that tissue damage as assessed above parameters increased with laser fluence and saturated at 1000 J cm^?2. Moreover, the damage effect due to high power density at short duration was not equivalent to that with low power density at longer irradiation time even though the energy delivered was identical. These results indicate the lack of validity of reciprocity (Bunsen-Roscoe) rule for the thermal damage.     

CEMS study of H2 annealed YIG films

We report on a CEMS investigation of the surface layer obtained in pure YIG film after an annealing of 20 h in H₂ at 480°C. We show that the surface layer has a garnet structure with the hyperfine fields coinciding with those of pure YIG. The magnetization in the surface layer is found to be parallel to that of the underlying film bulk. Furthermore we analyze the line widths of the Mössbauer peaks pertaining to such surface layer and compare the results with those obtained for a YIG film implanted with two different doses of Ne⁺, namely 7x10¹³ Ne⁺ cm^-2 at 50 keV and 2.7x10¹⁴ Ne⁺ cm^-2 at 50 keV. From this comparison it results that the peaks for the annealed film do not show any broadening while those for the implanted film are broadened. This clearly indicates that, within the experimental error, there is no damage in the surface layer obtained by annealing in H₂ and, in any case, the damage is much lower than found in the surface layers of YIG films implanted with doses of practical interest.     

HfO2/AlGaN/GaN structures with HfO2 deposited at ultra low pressure using an e‐beam

We show that HfO₂/AlGaN/GaN structures with HfO₂ layer deposited using an e‐beam in ultra high vacuum are suitable for field effect transistors. The dielectric constant of the HfO₂ was found ε_HfO > 23–24, which is close to the highest re‐ ported values for this material. The leakage current did not exceed 10^–4 A/cm² at the threshold voltage. The comparison of the losses in the samples with and without HfO₂ indicates low concentration of the interface traps. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Nitrogen implantation in GaAs1−xPx (x=0.4; 0.65)

Nitrogen ions were implanted in GaAs_1−xP_x (x=0.4; 0.65) at room temperature at various doses from 5×10¹² cm⁻² to 5×10¹⁵ cm⁻² and annealed at temperatures from 600°C up to 950°C using a sputtered SiO₂ encapsulation to investigate the possibility of creating isoelectronic traps by ion implantation. Photoluminescence and channeling measurements were performed to characterize implanted layers. The effects of damage induced by optically inactive neon ion implantation on photoluminescence spectrum were also investigated. By channeling measurements it was found that damage induced by nitrogen implantation is removed by annealing at 800°C. A nitrogen induced emission intensity comparable to the intensity of band gap emission for unimplanted material was observed for implanted GaAs_0.6P_0.4 after annealing at 850°C, while an enhancement of the emission intensity by a factor of 180 as compared with an unimplanted material was observed for implanted GaAs_0.35P_0.65 after annealing at 950°C. An anomalous diffusion of nitrogen atoms was found for implanted GaAs_0.6P_0.4 after annealing at and above 900°C.     

Propagation characteristics of laser-induced stress wave in deep tissue for gene transfer

Propagation characteristics of laser-induced stress waves (LISWs) in tissue and their correlation with properties of gene transfection were investigated for targeted deep-tissue gene therapy. LISWs were generated by irradiating a laser-absorbing material with 532-nm Q-switched Nd:YAG laser pulses; a transparent plastic sheet was attached on the absorbing material for plasma confinement. Temporal pressure profiles of LISWs that were propagated through different thickness tissues were measured with a needle-type hydrophone and propagation of LISWs in water was visualized by shadowgraph technique. The measurements showed that at a laser fluence of 1.2 J/cm² with a laser spot diameter of 3 mm, flat wavefront was maintained for up to 5 mm in depth and peak pressure P decreased with increasing tissue thickness d; P was proportional to d^−0.54. Rat dorsal skin was injected with plasmid DNA coding for reporter gene, on which different numbers of excised skin(s) was/were placed, and LISWs were applied from the top of the skins. Efficient gene expression was observed in the skin under the 3 mm thick stacked skins, suggesting that deep-located tissue such as muscle can be transfected by transcutaneous application of LISWs.     

Effect of SiO2 protective layer on the femtosecond laser-induced damage of HfO2/SiO2 multilayer high-reflective coatings

Two kinds of HfO₂/SiO₂ 800 nm high-reflective (HR) coatings, with and without SiO₂ protective layer were deposited by electron beam evaporation. Laser-induced damage thresholds (LIDT) were measured for all samples with femtosecond laser pulses. The surface morphologies and the depth information of all samples were observed by Leica optical microscopy and WYKO surface profiler, respectively. It is found that SiO₂ protective layer had no positive effect on improving the LIDT of HR coating. A simple model including the conduction band electron production via multiphoton ionization and impact ionization is used to explain this phenomenon. Theoretical calculations show that the damage occurs first in the SiO₂ protective layer for HfO₂/SiO₂ HR coating with SiO₂ protective layer. The relation of LIDT for two kinds of HfO₂/SiO₂ HR coatings in calculation agrees with the experiment result.     

Surface characterisation and interface studies of high-k materials by XPS and TOF-SIMS

High-k dielectric LaAlO₃ (LAO) films on Si(100) were studied by TOF-SIMS and XPS to look for diffusion processes during deposition and additional thermal treatment and for the formation and composition of possible interfacial layers. The measurements reveal the existence of SiO₂ at the LAO/Si interface. Thermal treatment strengthens this effect indicating a segregation of Si. However, thin LAO layers show no interfacial SiO₂ but the formation of a La-Al-Si-O compound. In addition, Pt diffusion from the top coating into the LAO layers occurs. Within the LAO layer C is the most abundant contamination (10²¹ at/cm³). Its relatively high concentration could influence electric characteristics. XPS shows that CO₃²⁻ is intrinsic to the LAO layer and is due to the adsorption of CO₂ of the residual gas in the deposition chamber.     

In situ endpoint detection of reactive ion-beam etching of dielectric gratings with an etch-stop layer using downstream mass spectrometry

Downstream mass spectrometry is successfully used in the reactive ion-beam etching of dielectric diffraction gratings of deep grooves with vertical sidewalls to achieve in situ endpoint detection. Silica (SiO₂) gratings with a Sc₂O₃ etch-stop layer are fabricated by reactive ion-beam etching with CHF₃ as etchant, and the mass spectrometric signal of SiF₃⁺ produced by the reactive etching of the SiO₂ grating material is monitored. When the etch-stop layer is reached, a drop of this signal occurs. By comparing the monitoring curves and resulting gratings of different etching methods, we find that the decrease of the monitored signal is strongly influenced by the sidewall steepness of the etched grating grooves. All conditions being equal, the greater sidewall steepness renders the faster decrease of the signal. Consequently, the proposed approach of endpoint detection applies well to the gratings with steep sidewalls. With the help of two previously developed methods, the sidewall steepness of grating grooves is increased, and the optimal endpoint is detected. Employing the proposed technique, we have reproducibly fabricated dielectric gratings with proper groove depth and even groove bottom.     

Molecular dynamics simulation of femtosecond ablation and spallation with different interatomic potentials

Fast heating of target material by femtosecond laser pulse (fsLP) with duration τ_L∼40-100 fs results in the formation of thermomechanically stressed state. Its unloading may cause frontal cavitation of subsurface layer at a depth of 50 nm for Al and 100 nm for Au. The compression wave propagating deep into material hits the rear-side of the target with the formation of rarefaction wave. The last may produce cracks and rear-side spallation. Results of MD simulations of ablation and spallation of Al and Au metals under action fsLP are presented. It is shown that the used EAM potentials (Mishin et al. and our new one) predict the different ablation and spallation thresholds on absorbed fluence in Al: ablation F_a=60{65} mJ/cm²and spallation F_s=120{190} mJ/cm², where numbers in brackets { } show the corresponding values for Mishin potential. The strain rate in spallation zone was 4.3×10⁹ 1/s at spallation threshold. Simulated spall strength of Al is 7.4{8.7} GPa, that is noticeably less than 10.3{14} GPa obtained from acoustic approximation with the use of velocity pullback on velocity profile of free rear surface. The ablation threshold F_a≈120 mJ/cm² and crater depth of 110 nm are obtained in MD simulations of gold with the new EAM potential. They agree well with experiment.     

Regularities of ion-electron emission of one-dimensional carbon-based composite material

The temperature dependences of the ion-electron emission yield γ(T), the crystal structure, and morphology of a surface layer of a carbon-based KUP-VM composite material under high-dose irradiation with N ₂ ⁺ 30 keV ions have been investigated. The complex two-stage nature of the dependence γ(T) is caused by the processes of dynamic annealing of radiation damage in structural components of a composite material.     

N+BF<Subscript>2</Subscript> and N+C+BF<Subscript>2</Subscript> high-dose co-implantation in silicon

Nitrogen and boron BF₂, and nitrogen, carbon, and boron BF₂ high-dose (6×10¹⁶–3×10¹⁷ cm^-2) co-implantation were performed at energies of about 21–77 keV. Subsequent high-temperature annealing processes (600, 850, and 1200 °C) lead to the formation of three and two surface layers respectively. The outer layer mainly consists of polycrystalline silicon and some amorphous material and Si₃N₄ inclusions. The inner layer is highly defective crystalline silicon, with some inclusions of Si₃N₄ too. In the N+B-implanted sample the intermediate layer is amorphous. Co-implantation of boron with nitrogen and with nitrogen and carbon prevents the excessive diffusivity of B and leads to a lattice-parameter reduction of 0.7–1.0%. Received: 10 January 2002 / Accepted: 30 May 2002 / Published online: 4 November 2002 RID="*" ID="*"Corresponding author. Fax: +34-91/3974895; E-mail: Lucia.Barbadillo@uam.es     

The effect of incident angle on the C60 bombardment of molecular solids

The effect of incident angle on the quality of SIMS molecular depth profiling using C₆₀⁺ was investigated. Cholesterol films of ∼300 nm thickness on Si were employed as a model and were eroded using 40 keV C₆₀⁺ at an incident angle of 40° and 73° with respect to the surface normal. The erosion process was characterized by determining at each angle the relative amount of chemical damage, the total sputtering yield of cholesterol molecules, and the interface width between the film and the Si substrate. The results show that there is less molecule damage at an angle of incidence of 73° and that the total sputtering yield is largest at an angle of incidence of 40°. The measurements suggest reduced damage is not necessarily dependent upon enhanced yields and that depositing the incident energy nearer the surface by using glancing angles is most important. The interface width parameter supports this idea by indicating that at the 73° incident angle, C₆₀⁺ produces a smaller altered layer depth. Overall, the results show that 73° incidence is the better angle for molecular depth profiling using 40 keV C₆₀⁺.     

C2C12 myoblast sensitivity to different apoptotic chemical triggers

Apoptosis is a form of cell death crucial for normal development and tissue homeostasis. Its typical features include chromatin changes, nuclear breakdown, plasma membrane blebbing and splitting of cellular content into apoptotic bodies, that progressively undergo phagocytosis.Apoptosis is considered essential for skeletal muscle development, where defective cells are deleted during differentiation. In addition, it plays a relevant role in several muscle myopathies, as well as in denervation and disuse.The aim of this study was to evaluate muscle cell sensitivity to different apoptotic triggers, acting through different mechanisms of action. Chemical agents, active against distinct intracellular targets, such as mitochondrial respiratory chain and DNA, have been chosen to better highlight cell death mechanisms. To induce apoptosis, C2C12 myoblasts have been exposed to H₂O₂, staurosporine, cisplatin and etoposide, at different doses and incubation times, and they have been analysed by flow cytometry, scanning and transmission electron microscopy.Flow cytometry analysis revealed a certain subdiploid peak after all treatments. The best apoptotic effect was observable, as confirmed at reverted microscope, at minimum doses and after the major exposure time.At ultrastructural level programmed cell death has been observed. Characteristic chromatin condensation and margination, as well as apoptotic bodies, frequently appeared, even if in the presence of secondary necrosis; surface blebs were also observed during scanning microscopic observation.In particular, exposure to H₂O₂ or staurosporine showed the largest number of myoblasts in late apoptotic stages and in secondary necrosis. Cisplatin treatments revealed few early apoptotic cells. The analysis of etoposide-induced apoptosis was in agreement with data obtained from flow cytometry, indicating a significant increase of apoptotic cell number.These results suggest that all conditions are able to induce apoptosis in C2C12 myoblasts, which occurs, considering trigger mechanisms of action, mostly following the mitochondrial pathway, if not excluding that due to DNA damage. Therefore, mitochondria permeability alteration is an important step in skeletal muscle programmed cell death. This last conclusion seems to have a significant relevance in understanding the mechanisms involved in muscle disorders, denervation and chronic muscle disuse, conditions frequently characterized by a decline in mitochondrial content and by an increase of mitochondrial apoptosis susceptibility.     

Femtosecond laser-induced damage of gold films

Single- and multi-shot ablation thresholds of gold films in the thickness range of 31-1400 nm were determined employing a Ti:sapphire laser delivering pulses of 28 fs duration, 793 nm center wavelength at 1 kHz repetition rate. The gold layers were deposited on BK7 glass by an electron beam evaporation process and characterized by atomic force microscopy and ellipsometry. A linear dependence of the ablation threshold fluence F_th on the layer thickness d was found for d ≤ 180 nm. If a film thickness of about 180 nm was reached, the damage threshold remained constant at its bulk value. For different numbers of pulses per spot (N-on-1), bulk damage thresholds of ∼0.7 J cm⁻² (1-on-1), 0.5 J cm⁻² (10-on-1), 0.4 J cm⁻² (100-on-1), 0.25 J cm⁻² (1000-on-1), and 0.2 J cm⁻² (10000-on-1) were obtained experimentally indicating an incubation behavior. A characteristic layer thickness of L_c ≈ 180 nm can be defined which is a measure for the heat penetration depth within the electron gas before electron-phonon relaxation occurs. L_c is by more than an order of magnitude larger than the optical absorption length of α⁻¹ ≈ 12 nm at 793 nm wavelength.     

Role of pH and calcium ions in the adsorption of an alkyl N-aminodimethylphosphonate on steel: An XPS study

The role of pH and calcium ions in the adsorption of an alkyl N-aminodimethylphosphonate on mild steel (E24) surfaces was investigated by XPS. Fe 2p_3/2 and O 1s spectra show that the oxide/hydroxide layer developed on the steel surface, immersed in the diphosphonate solution (7 ≤ pH ≤ 13, without Ca²⁺) or in a filtered cement solution (pH 13, 15.38 mmol l⁻¹ of Ca²⁺), consists of Fe₂O₃, covered by a very thin layer of FeOOH (goethite). The total thickness of the oxide/hydroxide layer is ∼3 nm and is independent of the pH and the presence/absence of Ca²⁺. In the absence of Ca²⁺ ions, the N 1s and P 2p spectra reveal that the adsorption of the diphosphonate on the outer layer of FeOOH takes place only for pH lower than the zero charge pH of goethite (7.55). At pH 7, the adsorbed diphosphonate layer is continuous and its equivalent thickness is ∼24 Å (monolayer). In the presence of Ca²⁺ ions, the C 1s and Ca 2p signals indicate that calcium is present on the steel surface as calcium phosphonate (and Ca(OH)₂, in very small amount). The adsorption of the diphosphonate molecules on the steel surface is promoted in alkaline solution (pH > 7.55) by the doubly charged Ca²⁺ ions that bridge the O⁻ of goethite and the P-O⁻ groups of the diphosphonate molecules. The measured values for the Ca/P intensity ratio are in the range 0.75-1, which suggests that the diphosphonate molecules are adsorbed on steel forming a polymer cross-linked by calcium ions through their phosphono groups. In the presence of Ca²⁺ ions in alkaline solution, the adsorbed diphosphonate layer is discontinuous and the surface coverage is found to be ∼34%.     

Deformation behavior of PZN–6%PT single crystal during nanoindentation

The deformation behavior of [001]^T- and [011]^T-cut single crystal solid solution of Pb(Zn_1/3Nb_2/3)O₃–6% PbTiO₃ (PZN–6%PT) in both unpoled and poled states has been investigated by nanoindentation. Nanoindentation experiments reveal that material pile-up and local damage around the indentation impressions are observed at ultra-low loads. These pile-ups and local damage cause a pop-in event (i.e. a sudden increase in displacement at an approximately constant load) in the nanoindentation load–displacement curve (P–h curve). Detailed studies of the relationships between indentation load (P), displacement (h) and harmonic contact stiffness (S) suggest that there is a surface layer, possibly due to crystal fabrication processes, which possesses different mechanical properties from the interior. The thickness of this surface layer is estimated to be approximately 300 nm. Furthermore, it is found that [011]^T-cut crystal is stiffer than [001]^T-cut crystal. On the other hand, both [001]^T- and [011]^T-cut crystals in unpoled state possess lower contact stiffness than poled crystals. This finding suggests that poling improved the mechanical property of the crystal. In summary, poled [001]^T-cut crystals have an elastic modulus of (107 ± 6) GPa and a hardness of (5.1 ± 0.4) GPa. In contrast, the modulus for [011]^T-cut crystals is not constant but increases with indentation depth.     

Microstructure and thermal stability of Fe,Ti, and Ag implanted yttria-stabilized zirconia

Yttria-stabilized zirconia (YSZ) was implanted with 15 keV Fe or Ti ions up to a dose of 8×10¹⁶ at cm^–2. The resulting dopant concentrations exceeded the concentrations corresponding to the equilibrium solid solubility of Fe₂O₃ or TiO₂ in YSZ. During oxidation in air at 400° C, the Fe and Ti concentration in the outermost surface layer increased even further until a surface layer was formed of mainly Fe₂O₃ and TiO₂, as shown by XPS and ISS measurements. From the time dependence of the Fe and Ti depth profiles during anneal treatments, diffusion coefficients were calculated. From those values it was estimated that the maximum temperature at which the Fe- and Ti-implanted layers can be operated without changes in the dopant concentration profiles was 700 and 800° C, respectively. The high-dose implanted layer was completely amorphous even after annealing up to 1100° C, as shown by scanning transmission electron microscopy. Preliminary measurements on 50 keV Ag implanted YSZ indicate that in this case the amorphous layer recrystallizes into fine grained cubic YSZ at a temperature of about 1000° C. The average grain diameter was estimated at 20 nm, whereas the original grain size of YSZ before implantation was 400 nm. This result implies that the grain size in the surface of a ceramic material can be decreased by ion beam amorphisation and subsequent recrystallisation at elevated temperatures.     

Influence of the exciton blocking layer on the stability of layered organic solar cells

The life-time of multi-layer organic solar cells based on the couple donor acceptor copper phthalocyanine/fullerene is studied as a function of the nature of the exciton blocking layer (EBL). It is shown that organic EBL are more efficient than are the inorganic In₂S₃ EBLs. Moreover among the organic EBL, Alq₃ is the most efficient EBL protecting layer. An organic solar cell’s lifetime depends on oxygen- and water-contamination of the organic materials. The solar cell’s degradation may correspond to bulk or interface phenomena. Using equivalent electrical schemes of solar cell diodes, we show that the structure degradation is mainly related to bulk modification. It is proposed that oxygen- and water-diffusion into the C₆₀ induce a large increase in its resistivity and, therefore an increase in the series resistance, which decreases the solar cell efficiency. In the case of In₂S₃ EBLs, the degradation law predicts that with time two different phenomena will be present. The classical oxygen- and water-diffusion into the organic material, during the first hour of air exposure, leads to a modification in the In₂S₃ EBL/organic interface properties.     

P2+和P+注入硅固相外延过程时间分辨的反射率研究

本文以时间分辨的反射率测量结合背散射和沟道分析、透射电子显微镜分析,比较和研究了在77K温度下180keV,1×10¹⁴/cm²P₂⁺和90KeV,2×10¹⁴/cm²P⁺注入硅于550℃退火时的固相外延过程。发现了P₂⁺,P⁺注入硅样品的固相外延过程具有不同的特征。这种差异是由于P₂⁺和P⁺在硅中引入不同的损伤造成的。P⁺注入的硅样品测量得到的时间分辨的反射谱是反常的。这种反常谱可用样品退火时从表面层到非晶硅层与从衬底到非晶硅层的双向外延的过程给出满意的解释。 关键词：     

Electronic properties of nanoporous TiO2 films investigated in real space by means of scanning tunnelling spectroscopy

Nanoporous TiO₂ films with a thickness between 100 nm and 8 μm were studied by scanning tunnelling spectroscopy. The bias voltage of significantly increased differential conductivity, indicating the conduction and valence bands, was found to be strongly dependent on layer thickness and the underlying substrate material. This effect is traced back to the high resistivity of the oxide films and the formation of Schottky barriers at the TiO₂-substrate contact. All films showed a strong hysteresis as a function of sweep direction of the bias voltage pointing towards the existence of a high number of localized electronic trap states. This effect is getting even more pronounced upon sample ageing. Laterally resolved measurements show that the major part of the surface exhibits similar I(V) characteristics with minor deviations, while smaller areas with significantly different response are identified. These areas are comparable in size to the individual crystals the material is composed of.