PVA薄膜光波导气敏元件及其应用研究

将纯聚乙烯醇(PVA)和掺有维生素C的PVA作为敏感试剂,通过旋转甩涂法分别研制出了PVA薄膜/锡掺杂玻璃光波导元件和VC-PVA薄膜/锡掺杂玻璃光波导元件并检测其气敏特性.实验结果表明,PVA薄膜/锡掺杂玻璃光波导元件对二甲苯气体有良好的选择性响应,其响应浓度范围为10-4～10-7(体积比);加入VC后,使此敏感元...     

Y2O3薄膜/锡掺杂玻璃光波导气敏元件及其气敏性

采用溶胶-凝胶法将氧化钇(Y2O3)敏感膜固定在锡掺杂玻璃光波导表面,研制出了Y2O3薄膜/锡掺杂玻璃光波导气敏元件,并对挥发性有机气体进行了检测.通过XRD测试对敏感薄膜的结构及晶粒尺寸进行了表征.实验结果表明,在室温下Y2O3薄膜/锡掺杂玻璃光波导气敏元件对二甲苯、氯苯气体有较好的选择性响应,其响应浓度范围为l×10-3 ～1×10-5(V/V).Y2O3薄膜/锡掺杂玻璃光波导气敏元件具有灵敏度高、成本低、响应速度快、制作工艺简单和可逆性好等优点.     

溶胶-凝胶法制备氧化锌薄膜/锡掺杂玻璃光波导及其气敏性研究

采用溶胶-凝胶法制备出氧化锌薄膜/锡掺杂玻璃光波导气敏元件,并在光波导传感检测系统中对二甲苯气体进行检测.结果表明,室温下该气敏元件对二甲苯气体有较好的响应,而对相同浓度的其它挥发性有机气体的响应相对较小,能检测出的二甲苯气体的响应范围为1×10-3～4×10-6,而对其它挥发性有机物气体的响应相对较小.同时该气敏元件...     

热处理对LiFe1-0.01xY0.005xAg0.005xPO4薄膜光波导传感元件气敏性的影响

以FeSO4.7H2O,H3PO4,LiOH.H2O,AgNO3及Y(NO3)3.6H2O为原料,利用水热法一步合成出了LiFe1-0.01xY0.005xAg0.005xPO4粉体(x=0.5,1.0),并将该材料作为敏感试剂,用旋转-甩涂法做成纳米薄膜固定在锡掺杂玻璃光波导表面,在不同温度下进行热处理。采用紫外-可见分光光度计、测厚仪以及自组装的玻璃光波导气敏测试仪研究了热处理对LiFe1-0.01xY0.005xAg0.005xPO4薄膜光学及气敏特性的影响。研究结果表明:在450℃下进行热处理的薄膜元件具有良好的光学透明及较好的气敏特性。相同浓度的不同挥发性有机气体中,该传感元件对二甲苯气体有很好的选择性响应,其检测响应范围为1×10-7～1×10-3(V/V),响应-恢复时间分别小于5和100 s。     

氧化锌薄膜/锡掺杂玻璃光波导元件及其对氯苯的气敏性研究

建立了玻璃光波导气敏元件检测氯苯气体的方法.采用浸渍-提拉法将ZnO敏感膜固定在锡掺杂玻璃光波导表面,研制出了检测氯苯气体的ZnO薄膜/锡掺杂玻璃光波导气敏元件,并用该玻璃光波导气敏元件对挥发性有机气体进行了检测.实验结果表明,在室温下,气敏元件对氯苯气体有明显的响应,而对相同浓度的其它挥发性有机气体的响应相对较小,对...     

钇掺杂对磷酸亚铁锂薄膜光波导传感元件气敏特性的影响

利用水热法合成出LiFePO4和钇(Y)掺杂的LiFePO4粉体,并作为敏感试剂,用浸渍-提拉法固定在锡掺杂玻璃光波导表面,分别研制了LiFePO4和LiFe0.99 Y0.01 PO4薄膜/锡掺杂玻璃光波导传感元件.用这些薄膜传感元件对挥发性有机气体进行检测,并比较了它们的气敏特性.结果表明,掺杂Y后LiFePO4薄...     

氧化镍-铁酸锌复合薄膜/锡掺杂玻璃光波导传感元件的制备及其对硫化氢气体的气敏性

用溶胶-凝胶法制成了NiO掺杂的ZnFe2O4溶胶,并用浸渍提拉法将其固定在锡掺杂玻璃光波导表面,研制了NiO-ZnFe2O4复合薄膜/锡掺杂玻璃光波导气敏元件,并对无机有毒气体进行了检测。 实验结果表明,在室温下,该传感元件对H2S气体具有一定的选择性响应,而对相同浓度的其它无机气体的响应相对较小,能够检测到1.0×10-9（体积比）的H2S气体,其响应和恢复时间分别是6和8 s。 该元件具有灵敏度高、响应-恢复快、可逆性和重复性好、容易制备,在室温下便于操作等特点。     

聚吡咯/二氧化锡杂化材料的制备及气敏性研究

化学氧化法制备了聚吡咯(PPy)，并进行了元素分析、TG-DTA分析、FTIR测试。讨论了氧化剂用量对PPy气敏性的影响。用机械共混法制备了含不同聚吡咯的聚吡咯/二氧化锡杂化材料，研究其低温下对有毒气体NH₃、H₂S、NO的敏感性。结果表明，相同条件下聚吡咯/二氧化锡杂化材料的气敏性和稳定性均优于聚吡咯、二氧化锡。60 ℃时，当聚吡咯/二氧化锡杂化材料中聚吡咯的质量分数为5%时，其对体积分数为0.05%的H₂S的灵敏度(V_g/ V_a)达到了104.52，且响应恢复时间短。文章讨论了气体与敏感元件的相互作用机制。这一研究有助于开发低能耗、灵敏度高的气敏元件。     

TiO2薄膜/锡掺杂玻璃光波导元件对苯乙烯蒸气的气敏性研究

本文将溶胶-凝胶法制备的溶胶采用浸渍提拉法固定在锡掺杂玻璃光波导元件表面,通过500℃热处理得到TiO2薄膜,且对低浓度的苯乙烯蒸气进行检测。从实验得知,该传感元件在挥发性有机气体浓度(体积分数)低到5.0×10-5时只对苯乙烯有响应,此时其他气体毫无响应,并在1.0×10-6～5.0×10-4范围之内对苯乙烯有较好的响应。响应时间和恢复时间分别为12s和34s。该传感器具有灵敏度高、响应快、可逆性和重复性好、易制作等特点。     

ZnFe2O4薄膜/锡掺杂玻璃复合光波导敏感元件的研究

采用浸渍-提拉法,将铁酸锌溶胶固定在锡掺杂玻璃光波导元件表面,通过不同的热处理温度(400℃,500℃,600℃)得到ZnFe2O4薄膜/锡掺杂玻璃复合光波导敏感元件,且对低浓度的苯乙烯蒸汽进行检测。在500℃热处理的传感元件对苯乙烯(相同浓度的挥发性气体中)的响应较大,并在体积比2.0×10-10~2.0×10-6范围内有较好的响应。响应时间和恢复时间分别为17s和60s。     

Structural,morphological, optical and sensing properties of SnSe and SnSe2 thin films as a gas sensing material

In this work, orthorhombic tin selenide thin films were grown onto three different substrates using an organophosphorus precursor (Ph₃PSe) via chemical vapor deposition. Structural, microstructural and morphological properties of the as-grown films were systematically investigated using XRD, ESEM and AFM respectively. Grain size, microstrain and dislocation were calculated and correlated with different factors. The effects of selenization temperature and substrate type on different film properties and gas sensing response of films deposited onto alumina substrates were investigated. XRD analysis reveals the appearance of a mixed phase as a function of temperature. Furthermore, substrate type plays a key role in the rate of appearance of each phase. EDAX analysis confirms the existence of the desired elements and detect the evaporation of selenium and the appearance of oxygen at higher temperatures. Atomic force microscopy (AFM) was used to investigate the surface topography of the grown thin films.Optical properties of the films grown onto glass and silicon substrates were studied. From the recorded optical data, a direct optical band gap in the range of 0.9–1.3 eV was obtained with an absorption coefficient α > 10⁴ cm⁻¹ throughout large spectral regions. Optical studies were remarkably affected by the obtained phase as well as the selenization temperature. Gas sensing properties of the samples deposited onto alumina substrates were examined as a new sensing material for detection of methane gas at different concentrations. SnSe sensors show high sensitivity, are reversible and exhibit fast response and recovery times compared to SnSe₂ sensors.     

Preparation of Fe3O4 thin film by the sol-gel method and its magnetic properties

Films consisting of magnetite particles were prepared by the sol-gel method using iron (III) nitrate dissolved in ethylene glycol and 2-methoxyethanol as a new precursor with the aim of decreasing the processing temperatures. Films were annealed under the mixture of hydrogen and nitrogen at various temperatures. Magnetite formation was found to be influenced both by temperature and atmosphere during firing and hydrogenation processes. Typical values of magnetization in saturation and coercive force of films were 440 mT and 196 kA/m, respectively.     

Growth,characterization and interfacial reaction of magnetron sputtered Pt/CeO2 thin films on Si and Si3N4 substrates

Growth of magnetron sputtered Pt/CeO₂ thin films on Si and Si₃N₄ were characterized by X‐ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM) and X‐ray photoelectron spectroscopy (XPS). Interaction of Pt/CeO₂ films with Si on Si and Si₃N₄ substrates was extensively investigated by XPS. XRD studies show that films are oriented preferentially to (200) direction of CeO₂. XPS results show that Pt is mainly present in +2 oxidation state in Pt/CeO₂/Si film, whereas Pt⁴⁺ predominates in Pt/CeO₂/Si₃N₄ film. Concentration of Pt⁴⁺ species is more than four times on Si₃N₄ substrate as compared with that on Si. Ce is present as both +4 and +3 oxidation states in Pt/CeO₂ films deposited on Si and Si₃N₄ substrates, but concentration of Ce³⁺ species is more in Pt/CeO₂/Si film. Interfacial reaction between CeO₂ and Si substrate is controlled in the presence of Pt. Pt/Ce concentration ratio decreases in Pt/CeO₂/Si₃N₄ film upon successive sputtering, whereas this ratio decreases initially and then increases in Pt/CeO₂/Si film. Copyright © 2015 John Wiley & Sons, Ltd.     

Optical fiber evanescent wave absorption spectrometry of nanocrystalline tin oxide thin films for selective hydrogen sensing in high temperature gas samples

SnO₂ nanocrystalline material was prepared with a sol-gel process and thin films of the nanocrystalline SnO₂ were coated on the surface of bent optical fiber cores for gas sensing. The UV/vis absorption spectrometry of the porous SnO₂ coating on the surface of the bent optical fiber core exposed to reducing gases was investigated with a fiber optical spectrometric method. The SnO₂ film causes optical absorption signal in UV region with peak absorption wavelength at around 320 nm when contacting H₂-N₂ samples at high temperatures. This SnO₂ thin film does not respond to other reducing gases, such as CO, CH₄ and other hydrocarbons, at high temperatures within the tested temperature range from 300 °C to 800 °C. The response of the sensing probe is fast (within seconds). Replenishing of the oxygen in tin oxide was demonstrated by switching the gas flow from H₂-N₂ mixture to pure nitrogen and compressed air. It takes about 20 min for the absorption signal to decrease to the baseline after the gas sample was switched to pure nitrogen, while the absorption signal decreased quickly (in 5 min) to the baseline after switching to compressed air. The adhesion of tin oxide thin films is found to be improved by pre-coating a thin layer of silica gel on the optical fiber. Adhesion increases due to increase interaction of optical fiber surface and the coated silica gel and tin oxide film. Optical absorption spectra of SnO₂ coating doped with 5 wt% MoO₃ were observed to change and red-shifted from 320 nm to 600 nm. SnO₂ thin film promoted with 1 wt% Pt was found to be sensitive to CH₄ containing gas.     

Effect of N5+ ion implantation on optical and gas sensing properties of WO3 films

In this paper we report the optical and gas sensing behaviours of tungsten oxide (WO₃) films, implanted with 45‐keV N^{5 +} ions of different fluences in the range 1 × 10¹⁵ to 1 × 10¹⁷ cm^–2. The film with fluence 1 × 10¹⁵ cm^–2 shows the most intense PL spectrum with two prominent peaks near UV and blue regions. The morphological changes because of ion implantation are also investigated by atomic force microscopy. Because of implantation the gas sensitivity of the film, in exposure of methane, is found to increase with reasonably fast response and recovery times. With the increase of the concentration of methane, the sensors show better result. Present work also includes the effect of N^{5 +} ion implantation on the structural property of WO₃ films. Copyright © 2015 John Wiley & Sons, Ltd.     

Influence of thermal annealing on the structural and optical properties of maghemite (γ‐Fe2O3) nanoparticle thin films

In this study, maghemite (γ‐Fe₂O₃) nanoparticles were initially synthesized via chemical co‐precipitation and then deposited by spray pyrolysis as thin films on white glass substrates. The thin films were annealed for 8 h at 400, 450, 500, 550, and 600 °C in an oven. The structural studies of maghemite nanoparticles were carried out using X‐ray diffractometer. Structural properties that we investigated by X‐ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, SEM, and Energy dispersive X‐ray analysis (EDS). Optical properties of the samples were also investigated by ultraviolet‐visible (UV–vis) spectroscopy. The results showed that maghemite nanoparticles have crystalline structure with domain that increases in size with increasing annealing temperature. The optical band gap values were found to reduce from 2.9 to 2.4 eV with increase in annealing temperature. Copyright © 2015 John Wiley & Sons, Ltd.     

Investigation on the growth of CaCu3Ti4O12 thin film and the origins of its dielectric relaxations

Using the radio frequency magnetron sputtering, CaCu₃Ti₄O₁₂ (CCTO) thin films were deposited on platinized silicon substrates. The influence of annealing temperature on structures and morphologies of the thin films was investigated. The high annealing temperature increased the crystallinity of the films. Temperature dependence of the dielectric constant revealed an amazing different characteristic of the dielectric relaxation at ∼10 MHz, whose characteristic frequency abnormally increased with the decrease of the measuring temperature unlike the relaxations due to extrinsic origins. Meanwhile, the dielectric constant at high frequencies was close to the value derived from the first principle calculation. All these gave the evidences to ascribe this relaxation to the intrinsic mechanism.     

The effects of ZnGa2O4 formation on structural and optical properties of ZnO:Ga powders

Gallium-doped zinc oxide (ZnO:Ga 1, 2, 3, 4 and 5 at%) samples were prepared in powder form by modifying the Pechini method. The formation of zinc gallate (ZnGa₂O₄) with the spinel crystal structure was observed even in ZnO:Ga 1 at% by X-ray diffraction. The presence of ZnGa₂O₄ in ZnO:Ga samples was also evidenced by luminescence spectroscopy through its blue emission at 430 nm, assigned to charge transfer between Ga³⁺ at regular octahedral symmetry and its surrounding O²⁻ ions. The amount of ZnGa₂O₄ increases as the dopant concentration increases, as observed by the quantitative phase analysis by the Rietveld method.