Photoluminescence of ZnO and Mn-Doped ZnO Polycrystalline Films Prepared by Plasma Enhanced Chemical Vapour Deposition

ZnO and Mn-doped ZnO polycrystalline films are prepared by plasma enhanced chemical vapour deposition at low temperature （220℃）, and room-temperature photoluminescence of the films is systematically investigated. Analysis from x-ray diffraction reveals that a11 the prepared films exhibit the wurtzite structure of ZnO, and Mndoping does not induce the second phase in the films. X-ray photoelectron spectroscopy confirms the existence of Mn^2＋ ions in the films rather than metalic Mn or Mn^4＋ ions. The emission efficiency of the ZnO film is found to be dependent strongly on the post-treatment and to degrade with increasing temperature either in air or in nitrogen ambient. However, the enhancement of near band edge （NBE） emission is observed after hydrogenation in ammonia plasma, companied with more defect-related emission. Furthermore, the position of NBE shifts towards to high-energy legion with increasing Mn-doped concentration due to Mn incorporation into ZnO lattice.     

Comparative Study of Properties of ZnO／GaN／Al203 and ZnO／Al203 Films Grown by Low－Pressure Metal Organic Chemical Vapour Deposition

ZnO films were deposited by low-pressure metal organic chemical vapour deposition on epi-GaN/Al203 films and c-Al203 substrates. The structure and optical properties of the ZnO/GaN/Al203 and ZnO/Al203 films have been investigated to determine the differences between the two substrates. ZnO films on GaN/Al203 show very strong emission features associated with exciton transitions, just as ZnO films on Al2O3, while the crystalline structural qualities for ZnO films on GaN/Al2O3 are much better than those for ZnO films directly grown on Al203 substrates. Zn and O elements in the deposited ZnO/GaN/Al2O3 and ZnO/Al2O3 films are investigated and compared by x-ray photoelectron spectroscopy. According to the statistical results, the Zn/O ratio changes from Zn-rich for ZnO/Al2O3 films to O-rich for ZnO/GaN/Al2O3 films.     

Effect of Gas Pressure on Nanocrystalline Diamond Films Prepared by Electron-Assisted Chemical Vapour Deposition

With use of electron-assisted chemical vapour deposition （EACVD） technology, nanocrystalline diamond films are successfully deposited on an α-SiC single phase ceramics substrate by means of reduction of the reactive gas pressure. The structure and surface morphology of the deposited films are characterized by Raman spectroscopy, x-ray diffraction （XRD）, field emission scanning electron microscopy （FE-SEM） and atomic force microscopy （AFM）. The results examined by FE-SEM and AFM show that when the gas pressure was reduced to 0.5- 1 kPa, the surface grain size and surface roughness of the diamond film are decreased greatly to 18-32nm and 34-58nm respectively. The grain sizes estimated from full with at half maximum of （111） XRD peak by the Scherrer formula are 6-28 nm. However, too high secondary nucleation rate may result in pores and defects in the deposited films. Only at suitable gas pressure （1 kPa） to deposit films can we obtain densification and better quality nanocrystalline films.     

Superconductivity in Heavily Boron-Doped Diamond Films Prepared by Electron Assisted Chemical Vapour Deposition Method

Heavily boron-doped thick diamond films with higher superconducting transition temperatures have been prepared by electron assisted chemical vapour deposition method. The results of scanning electron microscopy, Raman spectroscopy, x-ray diffraction, and Hall effect indicate that the films have nice crystalline facets, a notable decrease in the growth rate, and an increase in the tensile stress. Meanwhile, the film resistivity decreases with the increase of the carrier concentration. Our measurements show that the films with 4.88×10^20 cm^-3 and 1.61×10^21 cm^-3 carrier concentration have superconductivity, with onset temperatures of 9.7 K （8.9K for zero resistance） and 7.8 K （6.1 K for zero resistance）, respectively.     

Growth of Nanocrystalline Silicon Films by Helicon Wave Plasma Chemical Vapour Deposition

Nanocrystalline silicon (nc-Si) thin films have been prepared by a helicon-wave plasma chemical vapour deposition technique on glass-Si substrates. The structural properties and the surface morphology are characterized by Raman spectroscopy, x-ray diffraction and atomic force microscopy. It is proven that the deposited films have the features of high crystalline fraction and large grain size compared with that in the normal plasma-enhanced chemical vapour deposition regime. The crystalline fraction of the deposited films varying from 0%to 72% can be obtained by adjusting the substrate temperature.     

Growth of AlGaN Epitaxial Film with Chemical Vapour High A1 Content by Metalorganic Deposition

A high-Al-content AlGaN epilayer is grown on a low-temperature-deposited AlN buffer on （0001） sapphire by low pressure metalorganic chemical vapour deposition. The dependence of surface roughness, tilted mosaicity, and twisted mosaicity on the conditions of the AlGaN epilayer deposition is evaluated. An AlGaN epilayer with favourable surface morphology and crystal quality is deposited on a 2Onto low-temperature-deposited AlN buffer at a low V/Ⅲ flow ratio of 783 and at a low reactor pressure of 100 Torr, and the adduct reaction between trimethylaluminium and NH3 is considered.     

Electron Field Emission of CNx Thin Films Prepared by Low Pressure Plasma Enhanced Chemical Vapour Deposition

CNx thin films were prepared using low pressure plasma enhanced chemical vapour deposition,and then bombarded by low-energy N2^ .The compositions before and after N2^ bombardment were compared using x-ray photoelectron spectroscopy.The electron field emission characteristics of CNx thin films before and after N2^ bombardment were studied under the pressure of 10^-6pa.For the samples,the turn-on emission field decreased from 2.5V/μm to 1.2V/μm while the stable current density increased from 0.5mA/cm^2 to a value larger than 1mA/cm^2 before and after the bombardment.Our results illustrate that the field emission characteristics were improved after the bombardment of N2^ .     

Low-Temperature Growth of Polycrystalline silicon Films by SiCl4／H2 rf Plasma Enhanced Chemical Vapour Deposition

Polycrystalline silicon film was directly fabricated at 200℃ by the conventional plasma enhanced chemical vapour deposition method from SiCl4 with H2 dilution. The crystallization depends strongly on the deposition power.The maximum crystMlinity and the crystalline grain size are over 80% and 200—50Onm, respectively. The results of energy dispersive spectroscopy and infrared spectroscopy measurements demonstrate that the film is mostly composed of silicon, without impurities such as Cl, N, C and bonded H. It is suggested that the crystallization at such a low temperature originates from the effects of chlorine, i.e., in-situ chemical, etching, in-situ chemical cleaning, and the detachment of bonded H.     

Influences of Annealing on the Opto—electronic Properties of ZnO Films Grown by Plasma—Enhanced MOCVD

ZnO thin films have been grown on C-plane sapphire substrates by plasma-enhanced metal-organic chemical vapour deposition.The samples are then annealed at a higher temperature.The resistivity,concentration of electron,mobility and optically pumped threshold of both as-grown and annealed films are investigated.Furthermore,their structural and optical properties are also examined with x-ray diffraction,emission spectra and optical transmission spectra.The results indicate that the quality of ZnO thin films can be improved by annealing.     

Interfacial Properties of AlN／Si（111） Grown by Metal—Organic Chemical Vapour Deposition

We have studied the interfacial structures of AlN/Si(111) grown by metal-organic chemical vapour deposition.X-ray photoelectron spectroscopy and Anger electron spectroscopy were used to analyse the components and chemical structures of AlN/Si(111).The results indicated that a mix-crystal transition region,approximately 12nm,was present between the AlN film and the Si substrate and it was composed of AlN and Si3N4.After analysis we found that the existence of Si3N4 could not be avoided in the AlN/Si(111) interface because of strong diffusion at 1070℃.Even in AlN layer Si-N bonds,Si-Si bonds can be found.     

Atomic—Scale Kinetic Monte Carlo Simulation of {100}—Oriented Diamond Film Growth in C—H and C—H—CI Systems by Chemical Vapour Deposition

We simulate the {100}-oriented diamond film growth of chemical vapour deposition (CVD) under different models in C-H and C-H-Cl systems in an atomic scale by using the revised kinetic Monte Carlo method.The simulation results show that:(1) the CVD diamond film growth in the C-H system is suitable for high substrate temperature,and the film surface roughness is very coarse;(2) the CVD diamond film can grow in the C-H-Cl system either at high temperature or at low temperature,and the film quality is outstanding;(3) atomic Cl takes an active role for the growth of diamond film,especially at low temperatures.The concentration of atomic Cl should be controlled in a proper range.