最新超结功率MOSFET使大功率硬开关拓扑电路的使用成为可能

无论对哪种封装,新一代600V超结MOSFET的导通电阻标定了新的基准。新产品系列的特点是电流容量和开关速度非常高。兼之它具有目前世上无与伦比的优值FoM(Ron*Qg)——低于6ΩnC,这就注定了此器件将被用于硬开关AC/DC功率转换电路。本论文详细分析了移相ZVS全桥和交替双管正激架构(ITTF)的功耗。为尽量保证比较有意义,我们选择了非常相似的设计方案和相同的功率输入/输出条件。结果表明,与次好的MOSFET移相ZVS桥相比,新产品系列在不牺牲效率的条件下允许采用更简单的ITTF电路拓扑。     

内置功率开关的3A输出DC/DC降压控制器 MAX8505

<正> MAX8505是一种输入电压为2.6～5.5V、输出电流达3A 的高速开关型 DC/DC 降压变换器控制 IC。MAX8505内置功率开关,其16引脚 QSOP 封装尺寸仅为4.9mm×6mm,适用于网络与电信设备、服务器、廉价磁盘冗余阵列与存储系统及μP、A-SIC、现场可编程门阵列(FPGA)和输入/输出(I/O)等电源。     

最新高效率光伏逆变器拓扑结构及功率器件介绍

效率正成为电力电子装置设计中越来越重要的参数。在某些应用中,效率甚至成为行业发展的驱动力,典型的如太阳能发电行业。因为对于光伏发电行业,效率的提升可以直接带来经济效益。本文详细介绍了最新的能够提供高效率的光伏逆变器拓扑结构和功率器件,包括单相和三相逆变器,功率因数补偿对策,高效电流双向流动逆变器等。     

开关电源新技术动态

本文介绍了开关电源的发展情况以及国外的最新成就，考察了各种新型开关电源，它们的主要优点及其存在的问题；综述了开关电源计算机辅助设计技术的研究和发展；最后简要介绍了国外目前正在研究的一些课题。     

用于光伏并网发电系统的电路拓扑结构性能评价

本文从光伏组件与电力电子变换电路的连接方式、电力电子变换电路自身特点以及电路隔离性质三个方面出发,研究了光伏并网发电系统的电路拓扑结构分类及其相应的优缺点,给出了各种电路结构的适用场合以及一般的设计原则。     

Design of Power Switching and Distribution Circuits for Solar Power Generation

With the development of clean energy, switching and distribution issues in a photovoltaic system are getting much attention in recent years. This paper designs a DC to AC inverter and power switching and distribution system between a solar power system and the municipal system by using the Darlington amplifier structure with the photosensitive resistor and accompanying relays, and details the system circuits. The proposed system can achieve a stable output of 110 V AC, as well as self-generating driving voltage and switching between the municipal electrical system and the solar power system. The mathematic analysis and actually test results demonstrate that the proposed method is an easy, inexpensive, and low cost way to build a solar power switching and distribution system.     

Design of Power Switching and Distribution Circuits for Solar Power Generation

Abstract--With the development of clean energy, switching and distribution issues in a photovoltaic system are getting much attention in recent years. This paper designs a DC to AC inverter and power switching and distribution system between a solar power system and the municipal system by using the Darlington amplifier structure with the photosensitive resistor and accompanying relays, and details the system circuits. The proposed system can achieve a stable output of IIOV AC, as well as self-generating driving voltage and switching between the municipal electrical system and the solar power system. The mathematic analysis and actually test results demonstrate that the proposed method is an easy, inexpensive, and low cost way to build a solar power switching and distribution system.     

超结MOSFET功率器件的终端技术分析

为了改善超结MOSFET功率器件的终端击穿特性,提出了一种平面结终端技术,应用柱坐标下的泊松方程证明了这种技术的可行性。提出了超结功率器件终端技术的工艺实现方法并分析了终端结构的电压特性,使用这种超结终端技术仿真得到了一个600V的Coolmos。利用2维仿真软件Medici讨论了终端p柱的数量和宽度因素对击穿电压和表面电场的影响。结果发现,采用变间距的超结结构本身就可以很好地实现超结MOSFET功率器件的终端。     

Arrays and New Antenna Topologies for Increasing THz Power Generation Using Photomixers

Power limitations in CW THz generation imposed by conventional photomixers (“antenna emitters”, AEs) are the major drawbacks on THz generation. From the antenna point of view, two different strategies are proposed to increase the generated power: optimized arrays and lenses arrangements and the use of new dielectric horn antennas. Then, using multiple small lenses, one per each single element, instead of a large one, bigger than the array, makes the generated power much higher. In addition, horn antennas etched in the substrate are considered in order to reduce the energy distribution scattering. Finally, some manufacturing issues are discussed.     

Fabrication of Superjunction Trench Gate Power MOSFETs Using BSG‐Doped Deep Trench of p‐Pillar

In this paper, we propose a superjunction trench gate MOSFET (SJ TGMOSFET) fabricated through a simple p pillar forming process using deep trench and boron silicate glass doping process technology to reduce the process complexity. Throughout the various boron doping experiments, as well as the process simulations, we optimize the process conditions related with the p pillar depth, lateral boron doping concentration, and diffusion temperature. Compared with a conventional TGMOSFET, the potential of the SJ TGMOSFET is more uniformly distributed and widely spread in the bulk region of the n drift layer due to the trenched p‐pillar. The measured breakdown voltage of the SJ TGMOSFET is at least 28% more than that of a conventional device.     

开关电源噪声的产生与抑制

近年来,电磁干扰问题越来越成为电子产品的一个严重问题,电磁兼容技术日益成为许多技术人员重视的技术。开关电源是电子系统中的一种主要的干扰源之一,同时它的电磁兼容问题也是较难解决的。针对此分析了开关电源工作时噪声产生的原因,噪声对其它电子设备产生干扰的途径,并从电路设计、结构工艺两个方面提出了抑制噪声干扰的措施。     

高功率LED热管理方法研究最新进展

LED芯片结温的高低直接影响其出光效率、工作寿命和可靠性。在分析系统各个环节热阻的基础上,详细评述了高功率LED产品从芯片到系统级的热管理研究新动向,包括:自然对流冷却,采用压电风扇、电离方法所进行的强迫空气对流冷却,采用水、液态金属作为冷却工质的液冷方法,采用热管实现的相变冷却,采用热电片进行的固态冷却方案以及利用热电片对余热进行回收利用的热管热回收方案和液体金属冷却方法。并在上述基础上提出了发展更高功率密度LED热管理方法的关键科学问题。