Approximation of the product error made in calculating atmospheric band transmittances

The error was modeled for the assumption that the band transmittance at the n+1st level in a layered atmosphere is the nth level band transmittance times the band transmittance through the nth layer. A good approximation of this error was found to be a power of the band transmittance at the nth level, with the exponent being a function of the temperature, pressure, gas densities, and the layer band transmittance of the nth layer. The model was tested using six standard atmospheric profiles at five frequencies. The r.m.s. error for the entire transmittance profiles for all tests was 0.00167.     

Helicon waves in semiconductor superlattices

The dispersion relation for the helicon frequency of a system consisting of a periodic array of two-dimensional gas layers is studied as a function of both q and q_z, the components of the wavevector parallel and perpendicular to the layers. The result is compared with that for a homogeneous three-dimensional electron gas.     

Using of sonochemically prepared components for vapor phase growing of SbI3·3S8

The using of sonochemically prepared components for growth of SbI₃·3S₈ single crystals from the vapor phase is presented for the first time. The good optical quality of the obtained crystals is important because this material is valuable for optoelectronics due to its non-linear optical properties. The products were characterized by using techniques such as X-ray crystallography, powder X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, high-resolution transmission electron microscopy, selected area electron diffraction, optical diffuse reflection spectroscopy and optical transmittance spectroscopy. The direct and indirect forbidden energy gaps of SbI₃·3S₈ illuminated with plane polarized light with electric field parallel and perpendicular to the c-axis of the crystal have been determined. The second harmonic generation of light in the grown crystals was observed.     

Simultaneous solution of Kompaneets equation and radiative transfer equation in the photon energy range 1-125 keV

Radiative transfer equation in plane parallel geometry and Kompaneets equation is solved simultaneously to obtain theoretical spectrum of 1-125 keV photon energy range. Diffuse radiation field are calculated using time-independent radiative transfer equation in plane parallel geometry, which is developed using discrete space theory (DST) of radiative transfer in a homogeneous medium for different optical depths. We assumed free-free emission and absorption and emission due to electron gas to be operating in the medium. The three terms n, n² and (∂n/∂x_k) where n is photon phase density and x_k=(hν/kT_e), in Kompaneets equation and those due to free-free emission are utilized to calculate the change in the photon phase density in a hot electron gas. Two types of incident radiation are considered: (1) isotropic radiation with the modified black body radiation I^MB[1] and (2) anisotropic radiation which is angle dependent. The emergent radiation at τ=0 and reflected radiation τ=τ_max are calculated by using the diffuse radiation from the medium. The emergent and reflected radiation contain the free-free emission and emission from the hot electron gas. Kompaneets equation gives the changes in photon phase densities in different types of media. Although the initial spectrum is angle dependent, the Kompaneets equation gives a spectrum which is angle independent after several Compton scattering times.     

Radio frequency plasma enhanced chemical vapor based ZnO thin film deposition on glass substrate: A novel approach towards antibacterial agent

In the present study, the structural, optical and antibacterial properties of ZnO thin films are reported. ZnO thin films are deposited on borosilicate glass substrates by radio frequency plasma enhanced chemical vapor deposition (PECVD) using oxygen as process gas. The crystallinity of the deposited films is improved upon annealing at 450 °C in air for 1.5 h and the polycrystalline nature of the films is further confirmed by selected area electron diffraction. The particle size of the annealed film (thickness 476 nm) is found to be ∼34 nm from the transmission electron microscopic observation. Energy dispersive X-ray spectrum indicates the stoichiometric deposition of ZnO films. The films are highly transparent (transmittance >85%) in the visible region of electromagnetic spectrum. The films exhibit excellent antibacterial effect towards the growth of Escherichia coli and Pseudomonas aeruginosa.     

Thermal correction to resistivity in dilute Si-MOSFET two-dimensional systems

Neglecting electron-electron interactions and quantum interference effects, we calculate the classical resistivity of a two-dimensional electron (hole) gas, taking into account the degeneracy and the thermal correction due to the combined Peltier and Seebeck effects. The resistivity is found to be a universal function of the temperature, expressed in units of (h/e²)(k_Fl)^?1. Analysis of the compressibility and thermopower points to the thermodynamic nature of the metal-insulator transition in two-dimensional systems. We reproduce the beating pattern of Shubnikov-de Haas oscillations in both the crossed field configuration and Si-MOSFET valley splitting cases. The consequences of the integer quantum Hall effect in a dilute Si-MOSFET two-dimensional electron gas are discussed. The giant parallel magnetoresistivity is argued to result from the magnetic-field-driven disorder.     

Optical properties of orientated (SN)x-films in the visible and near infrared region

Optical reflectance and transmittance measurements between 0.3 and 5.5 eV were performed on (SN)_x-films which showed a parallel orientation of the crystallites with respect to their polymer chain axis.The optical behaviour below 3 eV for light polarized parallel to the chain axis and in particular a strong absorption peak between 1 and 2 eV is explained to be a Maxwell-Garnett resonance of the free carriers. The influence of the free carriers is also observed for light polarized perpendicular to the chains and is analysed by the same model. From the anisotropy of the transport properties the interchain coupling is inferred.     

Electron spin precession in two-dimensional electron gas with Rashba spin-orbit coupling

Using the time-dependent Schrödinger equation, we present the analytical result of the expectation value of spin injected into a two-dimensional electron gas with respect to an arbitrarily spin-polarized electron state and monitor the spin time-evolution. We demonstrate that the expectation value of spin operator Sx is the time-independent, and only the expectation values in the Sy-Sz plane are time-dependent. A detailed study of spin precession in the spin-valve and spin-transistor geometry is presented, in which the initial spin-polarized electron state point perpendicular and parallel to the current direction, respectively. We put forward the possible reason that the resistance change is independent of gate voltage in the spin-valve geometry. Furthermore, it has been shown that the effective magnetic field generated by the spin-orbit interaction is not same with the truly magnetic field. The main effect of the truly magnetic field is to align the spin along the field direction, but the effective magnetic field generated by the spin-orbit interaction does not.     

Single electron charging in parallel coupled quantum dots

We report low-temperature conductance measurements in the Coulomb blockade regime on two nominally identical tunnel-coupled quantum dots in parallel defined electrostatically in the two-dimensional electron gas of a GaAs/AlGaAs heterostructure. At low interdot tunnel coupling we find that the conductance measured through one dot is sensitive to the charge state of the neighboring dot. At larger interdot coupling the conductance data reflect the role of quantum charge fluctuations between the dots. As the interdot conductance approaches 2e²/h, the coupled dots behave as a single large dot.     

Sputter deposition of high transparent TiO2−xNx/TiO2/ZnO layers on glass for development of photocatalytic self-cleaning application

In this study, TiO_2−xN_x/TiO₂ double layers thin film was deposited on ZnO (80 nm thickness)/soda-lime glass substrate by a dc reactive magnetron sputtering. The TiO₂ film was deposited under different total gas pressures of 1 Pa, 2 Pa, and 4 Pa with constant oxygen flow rate of 0.8 sccm. Then, the deposition was continued with various nitrogen flow rates of 0.4, 0.8, and 1.2 sccm in constant total gas pressure of 4 Pa. Post annealing was performed on as-deposited films at various annealing temperatures of 400, 500, and 600 °C in air atmosphere to achieve films crystallinity. The structure and morphology of deposited films were evaluated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and atomic force microscopy (AFM). The chemical composition of top layer doped by nitrogen was evaluated by X-ray photoelectron spectroscopy (XPS). Photocatalytic activity of samples was measured by degradation of Methylene Blue (MB) dye. The optical transmittance of the multilayer film was also measured using ultraviolet-visible light (UV-vis) spectrophotometer. The results showed that by nitrogen doping of a fraction (∼1/5) of TiO₂ film thickness, the optical transmittance of TiO_2−xN_x/TiO₂ film was compared with TiO₂ thin film. Deposited films showed also good photocatalytic and hydrophilicity activity at visible light.     

The interfacial reaction between ITO and silicon nitride deposited by PECVD in fringe field switching device

In fringe field switching (FFS) device, the distance (l) between electrodes should be smaller than the cell gap (d) to generate fringe field. In order to increase the transmittance, common and pixel electrodes which are separated with the insulator should be transparent conductive materials. When the silicon-nitride by plasma enhanced chemical vapor deposition using SiH₄ gas is deposited on ITO in FFS device, the radical containing hydrogen causes the reduction of the indium-oxide to metallic indium on the film surface and finally the decrease of transmittance in visible range. To prohibit the reduction of In, the reduction of SiH₄ flow rate is needed. Therefore we suggest the two-step process in depositing the SiN_x consisting of a buffer-SiN_x layer and a bulk-SiN_x layer.     

Generation of uniform atmospheric pressure argon glow plasma by dielectric barrier discharge

In this paper, atmospheric pressure glow discharges (APGD) in argon generated in parallel plate dielectric barrier discharge system is investigated by means of electrical and optical measurements. Using a high voltage (0–20 kV) power supply operating at 10–30 kHz, homogeneous and steady APGD has been observed between the electrodes with gap spacing from 0.5 mm to 2 mm and with a dielectric barrier of thickness 2 mm while argon gas is fed at a controlled flow rate of 1 l/min. The electron temperature and electron density of the plasma are determined by means of optical emission spectroscopy. Our results show that the electron density of the discharge obtained is of the order of 10¹⁶ cm^???3 while the electron temperature is estimated to be 0.65 eV. The important result is that electron density determined from the line intensity ratio method and stark broadening method are in very good agreement. The Lissajous figure is used to estimate the energy deposited to the glow discharge. It is found that the energy deposited to the discharge is in the range of 20 to 25 μJ with a discharge voltage of 1.85 kV. The energy deposited to the discharge is observed to be higher at smaller gas spacing. The glow discharge plasma is tested to be effective in reducing the hydrophobicity of polyethylene film significantly.     

椭偏透射法测量氢化非晶硅薄膜厚度和光学参数

针对多角度椭偏测量透明基片上薄膜厚度和光学参数时基片背面非相干反射光的影响问题,报道了利用椭偏透射谱测量等离子增强化学气相沉积法(PECVD)制备的a-Si:H薄膜厚度和光学参数的方法,分析了基片温度T_s和辉光放电前气体温度T_g的影响.研究表明,用椭偏透射法测量的a-Si:H薄膜厚度值与扫描电镜(SEM)测得的值相当,推导得到的光学参数与其他研究者得到的结果一致.该方法可用于生长在透明基片上的其他非晶或多晶薄膜. 关键词： 椭偏测量 透射法 光学参数 氢化非晶硅薄膜     

A family of mappings among the 1-D electron gas, 2-D Coulomb gas,and 2-D epitaxial monolayer problems

We derive and examine a family of mappings among the one-dimensional (1-D) electron gas, the 2-D Coulomb gas, and the 2-D epitaxial monolayer problems. We find that the 4k_F instability of the 1-D electron gas maps onto the 2-D epitaxy system with misfit dislocations. The mappings are also used to discuss the commensurate-incommensurate transition in the 1-D electron gas.     

Effect of environment and heat treatment on the optical properties of RF-sputtered SnO2 thin films

Thin films of SnO₂ were deposited by RF-magnetron sputtering on quartz substrates at room temperature in an environment of Ar and O₂. The XRD pattern shows amorphous nature of the as-deposited films. The optical properties were studied using the reflectance and transmittance spectra. The estimated optical band gap (E_g) values increase from 4.15 to 4.3 eV as the Ar gas content decreases in the process gas environment. The refractive index exhibits an oscillatory behavior that is strongly dependent on the sputtering gas environment. The Urbach energy is found to decrease with increase in band gap. The band gap is found to decrease on annealing the film. The role of oxygen defects is explored in explaining the variation of optical parameters.     

CDW instability of electron gas in a strong magnetic field

It is shown that within the Hartree-Fock approximation the electron gas in the quantum limit of a strong magnetic field has an instability as the temperature is lowered toward the charge density wave state with an wave-vector which has finite components in the directions not only parallel but also perpendicular to the field. The critical temperature, T_c, is estimated under the assumption of T_c??_F?ω_c, where ?_F and ω_c are the Fermi energy of the non-interacting system and the cyclotron frequency respectively.     

Geodesic mode instability driven by the electron current in tokamak plasmas

Effect of the parallel electron current on Geodesic Acoustic Modes (GAM) in a tokamak is analyzed by kinetic theory taking into the account the ion Landau damping and diamagnetic drifts. It is shown that the electron current modeled by shifted Maxwell distribution may overcome the phase velocity threshold and ion Landau damping thus resulting in the GAM instability when the parallel electron current velocity is larger than the effective parallel GAM phase velocity Rqω. The instability occurs due to its cross term of the current with the ion diamagnetic drift. Possible applications to tokamak experiments are discussed.     

Ring interferometer on the basis of 2D electron gas in a double quantum well

Magnetotransport properties of submicron rings fabricated on the basis of 2D electron gas in a GaAs double quantum well are studied. It is shown that, in such interferometers, the Aharonov-Bohm effect is caused by coherent processes in two weakly coupled rings, which have different widths of electron channels. In these interferometers, a phase inversion of h/e oscillations is observed under the action of the parallel component of a tilted magnetic field. This phenomenon is qualitatively explained by a redistribution of charge carriers in the two rings.     

Synthesis of cauliflower-like ZnO-TiO2 composite porous film and photoelectrical properties

A series of cauliflower-like TiO₂-ZnO composite porous films with various molar ratios of Zn/Ti were prepared by the screen printing technique on the fluorine-doped SnO₂ (FTO) conducting glasses. The composite films were characterized by field-emission scanning electron microscopy (FE-SEM), X-ray energy-dispersive spectrometry (EDS) and UV-vis transmittance spectrum. The results showed composite film electrode had a novel cauliflower-like morphology, which could effectively increase the dye absorption. The corresponding dye-sensitized solar cells (DSCs) were made by the composite film, and effects of ZnO incorporation on the photovoltaic performances of the DSCs were studied. With the Zn/Ti molar ratio not more than 3% in ZnO-TiO₂ composite film of about 5 μm-thickness, the photocurrent density (J_sc) and the solar-to-electricity conversion efficiency (η) were greatly improved compared with those of the DSC based on bare TiO₂ film of same thickness. This increases in efficiency and J_sc were attributed to high electron conductivity of ZnO, the improved dye adsorption and large light transmittance of composite film.     

Quantum magneto-transport in two-dimensional GaAs electron gases and SiGe hole gases

We have measured the low-temperature transport properties of two-dimensional (2D) GaAs electron gases and 2D SiGe hole gases. Our experimental results fall into three categories. (i) Collapse of spin-splitting and an enhanced Landé g-factor at Landau level filling factors both ν=3 and ν=1 in a 2D GaAs electron gas are observed. Our experimental results show direct evidence that the effective disorder is stronger at ν=1 than that at ν=3 over approximately the same perpendicular magnetic field range. (ii) We present evidence for spin-polarisation of a dilute 2D GaAs electron gas. The Lande g-factor of the system is estimated to be 1.66. This enhanced g value is ascribed to electron–electron interactions at ultra low carrier density limit. (iii) In a high-quality SiGe hole gas, there is a temperature-independent point in the magnetoresistivity ρ_xx and ρ_xy which is ascribed to experimental evidence for a quantum phase transition between ν=3 and ν=5. We also present a study on the temperature(T)-driven flow lines in our system.