The effect of low-temperature electron irradiation on the transition temperature of YBa2Cu3O7−δ superconductors

Measurements of the complex susceptibility =–i of electron-irradiated YBa₂Cu₃O_7– show a strong influence of the electron irradiation dose, ·t on the transition temperatureT _c . For irradiation doses of ·t=2.2·10¹⁹ e^–/cm² we find a damage rate of T _c /(·t)=–1.6·10^–19 K/(e^–/cm²). It is assumed that the decrease ofT _c is mainly a bulk effect due to the production of atomic defects like vacancies and interstitials in the Cu–O–Cu chains and in the basal planes of the unit cells.     

Investigation of ionic thermocurrents in SrCl2-K crystals

Ionic thermocurrents in SrCl₂-K crystals have been investigated for the first time. Two maxima of thermally stimulated depolarization currents have been detected at T=112°K and T=210–240°K. The low-temperature maximum with a reorientation energy =0.25 eV and a frequency factor _o=7.1·10⁹ Hz is due to relaxation of impurity-vacancy dipoles. Its intensity grows linearly with the concentration of the dopand. The high-temperature maximum is due to the space charge. Its activation energy =0.46 eV coincides with the migration energy of anion vacancies associated with the potassium ions.Translated from Izvestiya Vysshikh Zavedenii, Fizika, No. 9, pp. 80–83, September, 1982.     

Solubility of Na2Co3 in NaCl:CaCl2 crystals

Measurements of electrical conductivity of NaCl 10^–5 molar fr. CaCl2 (1–80)×10^–5 molar fr. Na₂CO₃ crystals have been used to determine the temperature dependence of the solubility of CO₃-ions over the temperature range from 75 to 530 °C. The total solubility of CO₃-ions and that of [CO ₃ ^2– -vacancy] complexes may be expressed by simple relationships andc _ka=3·19× 10^–2 exp (–0·25 eV/kT), resp. The heat of solution of complexes is equal to 0·25 eV and that of free CO ₃ ^2– ions is higher than 1·2 eV. Under conditions of the thermal equilibrium between the solid solution and precipitate, the ratio of Na₂CO₃ and CaCO₃ components in the precipitate has been calculated at various temperatures and CO₃ concentrations.     

Switching with memory in metal-(Vanadium-molybdenum glass)-metal structures

The temperature dependences of the dc and ac (10²–2·10⁴ Hz) conductivity, the dielectric constant, and the coefficient of dielectric losses were measured for four compositions of glasses in the system V₂O₅-MoO₃-CaO. The metal-(vanadium-molybdenum glass)-metal structures exhibit switching with memory in the range 90 T 500 K. The switching parameters virtually do not depend on the temperature. For some samples an S-shaped section with negative differential resistance is observed on the volt-ampere characteristic (VAC) in the conducting state at temperatures T < 150 K.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 83–87, January, 1989.     

Diffusion coefficient of selenium in indium antimonide

The diffusion of selenium in indium antimonide has been studied in the temperature range 400–490°C, by the method of removing layers. Two regions have been distinguished in the donor distribution profiles. The first has a low diffusion coefficient and a high surface concentration, near to the limit of solubility of selenium (8·10¹⁸ cm^–3). In the second region, a much larger diffusion coefficient and a surface concentration lower by two orders of magnitude (8·10¹⁶ cm^–3) with weak temperature dependence are found. The temperature dependences of the diffusion coefficients of the first and second regions can be described by the expressions: D=4.8·10¹³ exp(–4.1 eV/kT) cm²/sec, D₂=1.9·10¹³ exp(–3.9 eV/kT) cm²/sec.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 40–43, November, 1991.     

Nuclear orientation study of the decay of204BiFe

The decay of²⁰⁴Bi nuclei (I =6⁺, T_1/2=11·22 h) oriented in an iron host was investigated on the JINR low-temperature nuclear orientation facility SPIN. The orientation parameterB ₂=1·17 (6) was obtained from the analysis of six prominent E1 gamma-transitions. From the measured normalized intensities of the gamma-rays observed some 70 values of multipole mixing ratios for the gamma-transitions in²⁰⁴Pb nucleus were determined for the first time. The spins 6, 6, 5 and 4 could be uniquely assigned to the²⁰⁴Pb negative parity levels at 3891·5 keV, 3768·4 keV, 3301·5 keV and 2338·2 keV, respectively. The spin-parity assignments of the levels at 4183·8 keV, 4094·2 keV, 3782·0 keV, 2506·9 keV and 2065·1 keV were confirmed as 6^–, 6^–, 5^–, 5^– and 5⁺, respectively. For the level at 3105·1 keV spin-parity 5^– was suggested and spinparity 7^– of the level at 2696·4 keV was called in question. The possible placements of the gammatransitions 3 1351·7 keV and 1353·4 keV in the decay scheme is discussed. The reorientation parameters for the long-living levels at 2264·2 keV (T _1/2=0·45 s) and 1273·9 keV (T _1/2= =265 ns) were determined asG ₂=0·41 (14) andG ₂=0·60 (17), respectively. For the isomeric level at 2185·7 keV (T _1/2=67·2 min) the value ofG ₂=0·88 (49) was proposed.The authors would like to express their thanks to T. I. Kracíková and M. Trhlík for the valuable discussions in the course of the evaluation of the experimental data.     

Electrical and optical properties and stabilization of the Fermi level in GaP crystals irradiated by electrons and H+ ions

Electrical and optical properties and Fermi level stabilization are studied in GaP crystals irradiated by electrons (E2.2 MeV, D1·10¹⁹ cm^–2) and H⁺ ions (E5 MeV, D1.7·10¹⁶ cm^–2). It is shown that the limiting position of the Fermi level (F_limE_G/2±0.2 eV) is independent of the initial GaP parameters and the type of bombarding particle, but is determined by the condition of local neutrality of the defective GaP. Resistivity values for the irradiated specimens of _max(D)1·10¹³ ·cm were obtained at 300 K. At maximum integral particle fluxes a decrease in crystal resistivity to (3–6)·10⁹ ·cm was observed. The readjustment of GaP absorption spectra in the region hvE_G upon irradiation is related to recharging of gap states by radiation defects upon motion of the Fermi level toward F_lim.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 37–42, December, 1994.     

Avalanche multiplication of charge carriers in isotype GaAs-Ga1−xAlxAs n+-v-n heterojunctions

The current-voltage characteristics of n⁺-v-n structure based on GaAs and Ga_1–xAl_xAs with x=0.2–0.8 were investigated. Voltages of 7–30 V lead to avalanche multiplication of charge carriers in the high-resistance layer. Depending on the C-band discontinuity _o on the n⁺-GaAs--Ga_1–xAl_xAs junction, the prebreakdown current is limited either by the probability of electron tunneling (_o > 0.3 eV) or by space charge in the v layer (_o < 0.2 eV). An expression for the multiplication coefficient in the case of space-charge limitation of the prebreakdown current is obtained. It is shown that in the structures in question the effect of external factors on the multiplication of electrons and holes can be investigated separately.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 80–84, June, 1978.     

Features of current carrier scattering in epitaxial films

The properties of epitaxial cadmium selenide films obtained by condensation in a vacuum on mica substrates under almost equilibrium conditions are investigated. The temperature dependences of the conductivity and current carrier mobility and concentration are studied. The electron concentration in the films depended on the gas phase composition (coevaporation of CdSe + Se or CdSe + In) and varied between 5·10¹⁰cm^–3 and 3.5·10¹⁸. It is shown that the current carrier scattering mechanism depends on their concentration and production conditions. For n₁ 10¹⁶ cm^–2 (T_S520C),n₂ < 10¹⁵ (T_S=630C), scattering on intercrystallite barriers predominated. For n₁ and n₂ greater than the quantities mentioned, scattering by ionized defects becomes dominant. It is established that the magnitude of the intercrystallite barrier in films with 10¹⁵ < n < 10¹⁶ cm^–3 is comparatively small and does not exceed 4·10^–3 eV, whereupon scattering at the barriers is not explicitly manifest. Concentrations of the ionized centers, magnitudes of the intercrystallite barriers, and ionization energies of the donor levels are determined for films obtained under different conditions.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 98–103, September, 1977.     

The hall effect in PdSi-based amorphous alloys containing Co.

The Hall effect in amorphous Pd₈₀Si₂₀ and Pd_80–x Si₂₀Co _x , wherex=2, 4, 6 (at.% are implied throughout) alloys was investigated. Measurements were carried out at r.t. in fields up to 17·5 kG. Also the electrical conductivity was measured. The Hall effect was found negative in all alloys of the above composition. Observedx-dependence of the Hall constantR _H tends to change the sign of the effect and is interpreted on the assumption that an extraordinary Hall effect manifests itself besides the ordinary one in Co-containing alloys. The value ofR _H for the basal alloy should be looked upon as an evidence of electron transfer from glass-former (Si) to transition metal (Pd) empty d-states. The values ofR _H obtained for the alloys withx=0, 2, 4, 6 are respectively, –7·8; –8·7; –8·3; –5·2 (×10^–5 cm³/A. sec throughout).     

On determination of the 2p-energy level shift and width for π−-4He atom

The strong interaction shift and width in the 2p-level of the pionic helium have been deduced from the analysis of the low-energy -⁴He scattering data. The obtained values are: _2p=4·0 × × 10^–3 eV and _2p=1·6 × 10^–3 eV. The analysis has been performed within the framework of the UST approach.Presented at the IV International Symposium Mesons and Light Nucler, Bechyn, Czechoslovakia, September 5–10, 1988.     

Coulomb predissociation rates of He dµ molecular ions

The predissociation or particle emitting decay rates of muonic molecular ions³He dµ and⁴He dµ are estimated by means of the complex rotation method. We use a highly accurate variational three-bodyP-wave function based on random-tempered Slater-type exponential expansion. A resonance eigenvalue ofE=–48.420 89 eV and =0.348 × 10^–3 eV for the³He dµ ion and a resonance eigenvalue ofE=–58.225 303 eV and =0.118 × 10^–3 eV for the⁴He dµ ion have been obtained. These results are in a good agreement with the ones previously obtained by Kino and Kamimura by scattering calculation with the non-adiabatic coupled-rearrangement-channel method.     

Optical,photoelectric and electric properties of single-crystalline Sb2Se3

Measurements of absorption coefficient in the region of the absorption edge, of spectral distribution of photoconductivity and dependence of electrical conductivity upon temperature on Sb₂Se₃ single crystals are given. The absorption of light was proved to correspond to indirect forbidden transitions. The value of optical gapE _g ^opt =(1·11±0·02) eV forE a andE c was determined. From photoconductivity and conductivity measurements the values of the gaps areE _g ^opt =1·11 eV andE _g ^el =1·04 eV. The anisotropy of the electrical conductivity parallel and perpendicular to the cleavage plane is 2·2.     

The dependence of the neutron temperature on the geometric parameter for water and loose diphenyl

The dependence of the neutron temperatureT _n on the geometric parameterB ² was measured by the pulse method in water and loose diphenyl. The measurements were made on a moderator poisoned by cadmium sulphate, a substance whose absorption cross-section is non 1/v.The following results were obtained: For waterT _n [eV]=–(0·00391±0·00045)B ² [cm^–2]+(0·02537±0·00035) for loose diphenyl:T _n [eV]=–(0·01014±0·00152)B ² [cm^–2]+(0·02518±0·00054).We are indebted to J. Jirou and J. Jadavan for their assistance in the measurements, the accelerator operation and electronic apparatus maintenance.     

The optical absorption of hydroxyl ions associated with divalent calcium in NaCl

The measurements confirmed the association of Ca²⁺ and OH^– in NaCl: CaCl₂ + NaOH, which causes an increase and a shift +0·031 of the OH^– absorption at 2·8, the extinction of the OH^– UV-absorption at 184 nm and the occurrence of new absorption bands between 160 and 210 nm.The measurements were performed at the II. Physikalisches Institut of the University of Stuttgart.     

An IR-Radiometer with Internal Signal Modulation

An infrared (IR) radiometer electrical circuit on the basis of photoresistors and photodiodes made of silicon doped with zinc (Si) as well as the narrow bandgap semiconductor alloy Pb_0.78Sn_0.22Te is presented. In the circuit suggested a bridge with the photoreceiver connected to the radiometer input and immediately fed by signal generators functions as a radiation modulator. The threshold sensitivity turned out on a recorder is 2·10^–13 W·Hz^–1/2 (for the n⁺–n–n⁺ structures made of Si, =0.8–l.2m, T=300K); 1.4·10^–15W·Hz^–1/2 (for p⁺–n–n⁺ S-diodes on the basis of Si, =0.8–1.2m, T=300K) and 10^–12W·Hz^1/2 (for photodiodes on the basis of Pb_0.78Sn_0.22Te, =8–13m, T=77K).     

Pressure sensitivity of the peak current of gallium arsenide tunnel diodes

The influence of hydrostatic pressure on the peak current of gallium arsenide tunnel diodes is studied in this paper. Analysis of the experimental pressure dependence of the peak current for diodes with different levels of doping in the n region and comparison with the theory served as the basis for finding the size of the energy gap between the absolute and secondary minima at the point X₁ and the velocity of travel of the energy gap with pressure: ⁰=(0.37±0.01) eV; d/dP = –(15±2)·10^–6 eV/bar.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 74–77, September, 1976.     

Energy Spectra of the Local States in the Forbidden Gap of Monoclinic TlInS2xSe2(1?x) Crystals

Near IR properties of the mixed TlInS_2xSe_2(1–x) have been studied previously by the present authors. In this work the temperature and frequency dependence's of the conductivity and the current-voltage characteristics (in relatively weak electric field), have been investigated for monoclinic TlInS_2xSe_2(1–x) crystals, which are perspective materials for IR applications. From the temperature dependence's of conductivity in the direction perpendicular to c- axis the band gap E^g = 2.22 eV was determined for --TlInS₂ crystals. The impurity centres were determined located at 0.43, 0.73 eV and 0.35, 0.48, 1.12 eV for the direction of current i//c and i c, respectively. The concentration of the centres located at 0.48 and 1.12 eV were calculated to be N_A – N_D = 4.8 · 10⁹ cm^–3 and 1.9 · 10¹¹ cm^–3, respectively. It was found that in the solid solutions TlInS_2xSe_2(1–x) for 0.3 x 1, the conductivity follows the dependence (v) = ₀·^s in the temperature range between 100 to 600 K. In the temperature range of 80-400 K charge bounce plays an important role in the conductivity mechanism. Occurrence of the deep and low-levels impurity centres and a tail of the density of energy states in TlInS_2xSe_2(1–x) crystals make them perspective for practical applications: switching and memory effects, N-type current-voltage characteristics, induced conductivity etc.     

Electrical properties of p-type ZnGeP2 irradiated by H+ ions

The properties of p-type ZnGeP₂ [p₀=(5–10)·10¹⁰ cm^–3, ₀=(2–5)·10^–7 (·cm)^–1], irradiated with H⁺ ions [E=5 MeV, T_irr=300 K, D=(1·10¹²–1.7·10¹⁶) cm^–2] are studied. An increase in the resistivity (to gr_max - 5·10¹¹ ·cm) and subsequent reduction in for large currents of H⁺ ions ( - 9·10⁸ ·cm for D - 1.7·10¹⁶ cm^–2), is observed in irradiated crystals. The resistivity of irradiated p-type ZnGeP₂ is found to be very sensitive to hydrostatic pressure [(4–5)·10^–5 bar^–1]. The annealing of radiation defects in the temperature interval (20–600) °C is examined.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 91–93, October, 1991.