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1.
本文观察了不同的热处理对于石榴石型的镥铁氧体(Lu3Fe5O12)和尖晶石型的锰铁氧体(MnFe2O4)单晶的铁磁共振的影响。两次热处理分别为在700℃空气中加热1小时,和在700℃氧气中加热10小时,发现这样的热处理对K1/Ms和g-因子无显著的影响,但却使共振线宽△H的各向异性显著减小,热处理对镥铁氧体的△H影响较小,但却使锰铁氧体的△H每经一次热处理后都成倍地增长。讨论了△H随热处理变化的原因,并由X射线衍射照相证实了锰铁氧体样品在热处理后有少量α-Fe2O3的脱溶。 相似文献
2.
包钴型γ-Fe2O3磁粉分为包钴γ-Fe2O3(简记为Co-γ-Fe2O3)和包钴包亚铁γ-Fe2O3(简记为CoFe-γ-Fe2O3)两种,它们的矫顽力可比γ-Fe2O3磁粉的提高100至400Oe左右,本工作对这两种磁粉矫顽力增大的原因作了探讨,认为它们矫顽力增大的机制不同:CO-γ-Fe2O3矫顽力增大是由于表面包覆一层Co(OH)2使表面各向异性增大,而CoFe-γ-Fe2O3则是由于表面包覆的是钴铁氧体,γ-Fe2O3与钴铁氧体之间发生耦合作用,使矫顽力增大。 相似文献
3.
用助熔剂法生长了石榴石型铁氧体(Bi3-2xCa2xFe5-x-yInyVxO12)单晶,成分为x=1.35±0.02,y=0—0.388。采用本文所述工艺,对不同掺铟量的材料都长出了线度在10毫米以上的包容物很少的单晶。这个系列的单晶材料和Ga-YIG相比居里温度要高10—30℃;磁晶各向异性常数随非磁性离子铟的代入量的增加而很快下降;各向异性场随饱和磁化强度的降低开始略有下降,而后缓慢增加,饱和磁化强度在530—200高斯范围,各向异性场都在40奥以下;X波段共振线宽随饱和磁化强度的降低而增加,似乎存在着与偶极致窄相联系的损耗机构,在上述饱和磁化强度范围,线宽为1—4奥。目前获得的最好材料其磁晶各向异性场为16奥,线宽0.7奥。这些结果表明,这个系列的材料适用于低微波频率单晶器件。 相似文献
4.
本文以流变相反应法原位合成了聚对苯撑/LiNi0.5Fe2O4纳米复合热电材料,并对其热电性能进行表征,研究了放电等离子烧结时保温时间对其热电性能的影响.结果发现,复合材料铁氧体颗粒粒径为100---300nm,其外部被一层聚对苯撑膜包覆.电子在Fe2+和Fe3+之间的跳跃机理在铁氧体电导中占主导作用,因此聚对苯撑/LiNi0.5Fe2O4复合材料具有n型导电特性.随着保温时间增加,复合材料电导率基本不变,但热导率逐渐增大且Seebeck系数逐渐减小,导致热电优值系数降低.由于结合了有机物高电导率和低热导率以及无机材料高赛贝克系数的优点,所制备的复合材料热电性能较单一材料有较大提高. 相似文献
5.
本文研究了在外磁场中圆对称环域Josephson结的环形准磁通量子运动.准磁通量子的激发对外磁场的依赖关系与结的几何尺寸有关.对结宽度αγ0-γ0=5λJ的环域结,外磁场使准磁通量子的寿命增加;对αγ0-γ0=10λJ的环域结,外磁场除了产生上述效应外,还影响准磁通量子运动的细节.外磁场还使第一零场台阶向低驱动电流方向扩展.无疑地,这些变化是与外磁场在结中的不均匀分布密切相关.本文同时讨论了可调Josephson振荡器的一个合理方案. 相似文献
6.
Sanjay Pralhadrao Jadhav Bhagwan Ghanshamji Toksh Kamalakar Marutirao Jadhav Narayan Dadarao Shinde 《化学物理学报》2010,23(4):459-464
采用湿化学共沉淀法合成了Ni1-xCdxFe2O4 (0≤x≤0.5)的混合铁氧体,利用X射线衍射对其结构和晶相进行表征.结果表明:随着镉Cd浓度的增加晶格参数逐渐增大.扫描电子显微镜研究微观结构,TG/DTA研究了硫酸共沉淀物.揭示了在650 oC合成铁氧体同时进行分解.测量了纳米粒子的磁化强度和交流磁化率.结果表明,Ni1-xCdxFe2O4混合铁氧体的磁化率、居里温度和有效磁矩随着镉含量的增加下降。 相似文献
7.
利用Spitzer的广义欧姆定律分析等离子体中由垂直于磁场的压强梯度所引起的宏观瞬变性质。在垂直于磁场方向的初始流动速度为零的条件下,得出在恒稳磁场中的瞬时扩散系数(当ωceτ?1)为 D= (2kmec2)/e2 T/(B2τ)+(kc)/eT/Be-me/(miτ)tsinωcit,式中τ为电子离子的平均碰撞时间间隔。 相似文献
8.
纳米多孔离子液体复合材料的合成及其在酯化反应中的应用 总被引:1,自引:0,他引:1
以溴化1-丁基-3-甲基咪唑离子液体和磷钨杂多酸(H3PW12O40)为原料制备了杂多酸功能化离子液体复合材料催化剂(bmim-PW12),并用于催化乙酸与正丁醇酯化合成乙酸正丁酯的反应,考察了bmim-PW12不同热处理温度对其结构以及催化酯化反应活性的影响.结果表明,bmim-PW12在500 oC热处理时杂多酸
阴离子仍保持Keggin结构,但有机阳离子在350 oC以上发生了部分分解.bmim-PW12在400 oC热处理具有纳米多孔结构和较大的酸强度,且在丁醇与乙酸酯化合成乙酸丁酯反应中,具有较高的催化活性和较好的重复使用性能. 相似文献
9.
利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB2超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB2样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 1013/cm2的样品的临界电流密度达到了1.72× 105 A/cm2, 比干净的MgB2要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平. 相似文献
10.
利用分子梳技术和动态光散射研究了三氯六氨络合钴和DNA分子之间的相互作用. 从荧光显微镜中可直接观察到经YOYO-1染色后?-DNA分子的平均伸直长度比未染色的DNA分子增长约30%. 这是由于荧光染料YOYO-1分子插入双链DNA的碱基对中从而使DNA分子的长度增加. 另外研究了染色后的DNA-[Co(NH3)6]3+混合物的伸直长度随三氯六氨络合钴浓度的变化关系,实验结果表明当钴离子浓度从0增加到3 μmol/L,其混合物的伸直长度由原来的20.9 μm减小到5.9 μm. 利用动态光散射技术证实了这个结果,发现在相同的实验条件下加入钴离子前后DNA-Co(NH3)6]3+混合物的流体力学半径从203.8 nm减小到39.26 nm. 相似文献
11.
本文从描述光激射器工作的基本方程出发,讨论了光激射器光束线宽的“短期”(short-time)部分。通常都以下式描写这部分线宽:△vs=(8πhv(△v′)2)/P,(1)其中△v′是谐振腔电磁模的半宽度;v为光束频率;P为输出功率。我们的主要结论可以归结为以下三点:(1)线宽主要是由与电磁模耦合的耗散体系引起的,与分子耦合的耗散体系的贡献是可以忽略的;(2)在单模近似下,只要分子的线宽比电磁模的线宽大得多,则(1)式是正确的;(3)如果多模谐振腔中激发模与其他模之间的相互作用是强的,则式(1)将被推广为 △vs=(8πhv(△v′)2)/P+(4hv(△v′))/P somefromn=(λ′≠λ)(rλλ′2/(rλ′),(2) 其中rλλ′是相关弛豫系数;rλ′是模λ′的线宽。在某些情况下,式(2)中第二项可以比其第一项还大。所以,这可能是目前关于线宽的实验结果与由式(1)计算结果不相符合的原因之一。 相似文献
12.
SiC thin films were grown on Si (1 0 0) substrates by excimer laser ablation of a SiC target in vacuum. The effect of deposition temperature (up to 950 °C), post-deposition annealing and laser energy on the nanostructure, bonding and crystalline properties of the films was studied, in order to elucidate their transition from an amorphous to a crystalline phase. Infra-red spectroscopy shows that growth at temperatures greater than 600 °C produces layers with increasingly uniform environment of the Si-C bonds, while the appearance of large crystallites is detected, by X-ray diffraction, at 800 °C. Electron paramagnetic resonance confirms the presence of clustered paramagnetic centers within the sp2 carbon domains. Increasing deposition temperature leads to a decrease of the spin density and to a temperature-dependent component of the EPR linewidth induced by spin hopping. For films grown below 650 °C, post-deposition annealing at 1100 °C reduces the spin density as a result of a more uniform Si-C nanostructure, though large scale crystallization is not observed. For greater deposition temperatures, annealing leads to little changes in the bonding properties, but suppresses the temperature dependent component of the EPR linewidth. These findings are explained by a relaxation of the stress in the layers, through the annealing of the bond angle disorder that inhibits spin hopping processes. 相似文献
13.
由于磁弹耦合,应力等效为各向异性场并对磁化强度分布发生影响。借助这一机制阐明了机械抛光的YIG和BCVIG单晶球铁磁共振线宽的各向异性行为,指明机械抛光造成的表面损伤层引起的应力通过磁致伸缩的各向异性使弛豫时间各方向不同,即产生了线宽的各向异性。若损伤层主要由位错组成,按微磁学理论和双磁振子散射模型可得到位错密度、磁致伸缩、磁化强度等与线宽的关系。从测量到的线宽各向异性估算了3μm抛光的YIG的表面层位错密度为5.4×1010/cm2。该弛豫机制表明,进一步降低多晶小线宽材料的线宽,减小磁致伸缩系数可能是有效途径。
关键词: 相似文献
14.
Angular dependences of resonance field and linewidth have been measured for ferromagnetic CdCr2Se4 crystal doped with 1.5 mol.% Ag before and after annealing in vacuum. The change of the sign of anisotropy due to annealing is associated with transformations Cr4+→Cr3+→Cr2+. On the basis of obtained data some suppositions are made about the mechanisms of conductivity in the Ag-doped CdCr2Se4 crystal. 相似文献
15.
V. N. Ageev N. D. Potekhina I. I. Pronin S. M. Soloviev D. V. Vyalykh S. L. Molodtsov 《Physics of the Solid State》2006,48(4):792-800
Core-level photoelectron spectroscopy with synchrotron radiation (hv = 140 eV) has been applied to study the variation in the Si+ charge state in silicon films deposited on the W(100) surface after thermal annealing of the substrate. The purpose of this study is to check the mechanism responsible for the sharp increase in the yield of Na+ ions in electron-stimulated desorption from a sodium layer adsorbed on the Si/W(100) surface after high-temperature annealing. The evolution of the W 4f 7/2 and Si 2p photoelectron spectra and the valence band photoemission spectra is investigated for two silicon coverages (1 and 3 ML) on the W(100) surface in the temperature range 300<T<2200 K. It is shown that annealing of 1 ML Si on the W(100) surface results in the formation of a W-Si covalent bond, which can weaken the Si-Na bond and lead to an increase in the equilibrium distance X 0 and, hence, to an increase in the yield of Na+ ions in electron-stimulated desorption. The variation in the photoelectron spectra under annealing of 3 ML Si differs from that observed after annealing of 1 ML Si in the direction of charge transfer, thus correlating with the opposite effect of annealing of 3 ML Si/W on the Na+ yield in electron-stimulated desorption. 相似文献
16.
Raman scattering has been used as a technique for the characterization of RuO2 thin films deposited on different substrates by the metal-organic chemical vapor deposition method and reactive sputtering under various conditions. Red shift and broadening of the linewidth of the Raman peaks are analyzed by the spatial correlation model. The intrinsic linewidth for the RuO2 films deposited at high and low temperatures has to be adjusted to different values to achieve a good fit for the features. The lineshape and position of the Raman features vary for films deposited on different substrates under the same condition. These differences indicate the existence of stress induced by lattice mismatch and the differential thermal expansion coefficients between RuO2 and the substrates. After annealing at 650°C in an oxygen atmosphere for 3 h, the linewidth decreases significantly for the RuO2 thin films deposited at lower temperatures. The results show the improvement of the crystallinity of the films during the annealing process. 相似文献
17.
The effect of an applied stress on the annealing texture of polyethylene is demonstrated by means of stress annealing experiments. Cold-drawn polyethylene specimens were annealed for various times at 126°C with and without a compression stress of 0.4 kg/mm2 normal to the drawing direction. The observed change in the annealing texture resulting from the compression stress indicates that stress-induced alignment of the crystalline regions in the polyethylene occurs (stress-induced texture). The alignment may be understood in terms of the elastic energy stored in the material during annealing. The stored elastic energy is minimized by aligning the crystallites such that the crystallographic direction of lowest modulus is parallel to the direction of the applied stress. The importance of this observation for the interpretation of the high-temperature deformation textures of polymers is discussed. 相似文献
18.
19.
H. Ryssel G. Prinke H. Bernt K. Haberger K. Hoffmann 《Applied Physics A: Materials Science & Processing》1982,27(4):239-241
Problems caused by the statistical variation of the number of exposing ions in ionbeam lithography are discussed. Using Poisson statistics, the minimum dose required for exposure as a function of resist sensitivity and minimum feature size is calculated. It is found that, although ion-beam resists show a very high sensitivity of 1011 to 1013,cm–2, it would be possible to use still more sensitive resists and obtain submicron linewidth resolution. 相似文献
20.
Kenji Matsumoto Yutaka Adachi Takeshi Ohgaki Naoki Ohashi Hajime Haneda Isao Sakaguchi 《Solid State Communications》2010,150(43-44):2118-2121
Zinc self-diffusion along the growth direction was analyzed for the isotopic multilayer ZnO thin film ((64ZnO/68ZnO)664ZnO) deposited by pulsed laser deposition. The isotopic distribution was measured using a secondary ion mass spectrometry. The amplitude of the 64Zn abundance in the depth profile was reduced by annealing at 993 K for several hours due to interdiffusion between the 64ZnO and 68ZnO layers. The diffusion profiles at the isotopic interfaces were analyzed using a periodic equation. The obtained zinc self-diffusion coefficients at several isotopic interfaces along the growth direction showed that the self-diffusion coefficients increased towards the film/substrate interface. A similar trend was also found in the lateral direction. The variation among the self-diffusion coefficients was related to the film thicknesses at the analysis positions. Since zinc self-diffusion is controlled by a vacancy-mediated mechanism, the variation in zinc diffusivity along the growth direction can be attributed to the effect of compressive biaxial stress. These findings are useful for producing high-quality ZnO devices. 相似文献