热处理对鑥铁氧体和锰铁氧体单晶铁磁共振的影响

本文观察了不同的热处理对于石榴石型的镥铁氧体(Lu₃Fe₅O₁₂)和尖晶石型的锰铁氧体(MnFe₂O₄)单晶的铁磁共振的影响。两次热处理分别为在700℃空气中加热1小时,和在700℃氧气中加热10小时,发现这样的热处理对K₁/M_s和g-因子无显著的影响,但却使共振线宽△H的各向异性显著减小,热处理对镥铁氧体的△H影响较小,但却使锰铁氧体的△H每经一次热处理后都成倍地增长。讨论了△H随热处理变化的原因,并由X射线衍射照相证实了锰铁氧体样品在热处理后有少量α-Fe₂O₃的脱溶。     

包钴型γ-Fe2O3磁粉矫顽力的研究

包钴型γ-Fe₂O₃磁粉分为包钴γ-Fe₂O₃(简记为Co-γ-Fe₂O₃)和包钴包亚铁γ-Fe₂O₃(简记为CoFe-γ-Fe₂O₃)两种,它们的矫顽力可比γ-Fe₂O₃磁粉的提高100至400Oe左右,本工作对这两种磁粉矫顽力增大的原因作了探讨,认为它们矫顽力增大的机制不同:CO-γ-Fe₂O₃矫顽力增大是由于表面包覆一层Co(OH)₂使表面各向异性增大,而CoFe-γ-Fe₂O₃则是由于表面包覆的是钴铁氧体,γ-Fe₂O₃与钴铁氧体之间发生耦合作用,使矫顽力增大。     

掺铟的铋钙钒石榴石铁氧体单晶生长与磁性

用助熔剂法生长了石榴石型铁氧体(Bi_3-2xCa_2xFe_5-x-yIn_yV_xO₁₂)单晶,成分为x=1.35±0.02,y=0—0.388。采用本文所述工艺,对不同掺铟量的材料都长出了线度在10毫米以上的包容物很少的单晶。这个系列的单晶材料和Ga-YIG相比居里温度要高10—30℃;磁晶各向异性常数随非磁性离子铟的代入量的增加而很快下降;各向异性场随饱和磁化强度的降低开始略有下降,而后缓慢增加,饱和磁化强度在530—200高斯范围,各向异性场都在40奥以下;X波段共振线宽随饱和磁化强度的降低而增加,似乎存在着与偶极致窄相联系的损耗机构,在上述饱和磁化强度范围,线宽为1—4奥。目前获得的最好材料其磁晶各向异性场为16奥,线宽0.7奥。这些结果表明,这个系列的材料适用于低微波频率单晶器件。     

聚对苯撑/LiNi0.5Fe2O4纳米复合热电材料的制备及其性能研究

本文以流变相反应法原位合成了聚对苯撑/LiNi_0.5Fe₂O₄纳米复合热电材料,并对其热电性能进行表征,研究了放电等离子烧结时保温时间对其热电性能的影响.结果发现,复合材料铁氧体颗粒粒径为100---300nm,其外部被一层聚对苯撑膜包覆.电子在Fe²⁺和Fe³⁺之间的跳跃机理在铁氧体电导中占主导作用,因此聚对苯撑/LiNi_0.5Fe₂O₄复合材料具有n型导电特性.随着保温时间增加,复合材料电导率基本不变,但热导率逐渐增大且Seebeck系数逐渐减小,导致热电优值系数降低.由于结合了有机物高电导率和低热导率以及无机材料高赛贝克系数的优点,所制备的复合材料热电性能较单一材料有较大提高.     

圆对称环域Josephson结中准磁通量子激发对外磁场的依赖关系

本文研究了在外磁场中圆对称环域Josephson结的环形准磁通量子运动.准磁通量子的激发对外磁场的依赖关系与结的几何尺寸有关.对结宽度αγ₀-γ₀=5λ_J的环域结,外磁场使准磁通量子的寿命增加;对αγ₀-γ₀=10λ_J的环域结,外磁场除了产生上述效应外,还影响准磁通量子运动的细节.外磁场还使第一零场台阶向低驱动电流方向扩展.无疑地,这些变化是与外磁场在结中的不均匀分布密切相关.本文同时讨论了可调Josephson振荡器的一个合理方案.     

镉取代对纳米镍铁氧体结构和磁性的影响

采用湿化学共沉淀法合成了Ni_1-xCd_xFe₂O₄ (0≤x≤0.5)的混合铁氧体,利用X射线衍射对其结构和晶相进行表征．结果表明：随着镉Cd浓度的增加晶格参数逐渐增大．扫描电子显微镜研究微观结构,TG/DTA研究了硫酸共沉淀物．揭示了在650 oC合成铁氧体同时进行分解．测量了纳米粒子的磁化强度和交流磁化率．结果表明,Ni_1-xCd_xFe₂O₄混合铁氧体的磁化率、居里温度和有效磁矩随着镉含量的增加下降。     

关于等离子体中的瞬变过程

利用Spitzer的广义欧姆定律分析等离子体中由垂直于磁场的压强梯度所引起的宏观瞬变性质。在垂直于磁场方向的初始流动速度为零的条件下,得出在恒稳磁场中的瞬时扩散系数(当ω_ceτ?1)为 D= (2km_ec²)/e² T/(B²τ)+(kc)/eT/Be^-m_e/(miτ)tsinω_cit,式中τ为电子离子的平均碰撞时间间隔。     

纳米多孔离子液体复合材料的合成及其在酯化反应中的应用

以溴化1-丁基-3-甲基咪唑离子液体和磷钨杂多酸(H₃PW₁₂O₄₀)为原料制备了杂多酸功能化离子液体复合材料催化剂(bmim-PW12),并用于催化乙酸与正丁醇酯化合成乙酸正丁酯的反应,考察了bmim-PW12不同热处理温度对其结构以及催化酯化反应活性的影响．结果表明,bmim-PW12在500 oC热处理时杂多酸 阴离子仍保持Keggin结构,但有机阳离子在350 oC以上发生了部分分解．bmim-PW12在400 oC热处理具有纳米多孔结构和较大的酸强度,且在丁醇与乙酸酯化合成乙酸丁酯反应中,具有较高的催化活性和较好的重复使用性能.     

钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响

利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB₂超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB₂样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 10¹³/cm²的样品的临界电流密度达到了1.72× 10⁵ A/cm², 比干净的MgB₂要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.     

三氯六氨络合钴导致DNA凝聚的分子梳研究

利用分子梳技术和动态光散射研究了三氯六氨络合钴和DNA分子之间的相互作用. 从荧光显微镜中可直接观察到经YOYO-1染色后?-DNA分子的平均伸直长度比未染色的DNA分子增长约30%. 这是由于荧光染料YOYO-1分子插入双链DNA的碱基对中从而使DNA分子的长度增加. 另外研究了染色后的DNA-[Co(NH₃)₆]³⁺混合物的伸直长度随三氯六氨络合钴浓度的变化关系,实验结果表明当钴离子浓度从0增加到3 μmol/L,其混合物的伸直长度由原来的20.9 μm减小到5.9 μm. 利用动态光散射技术证实了这个结果,发现在相同的实验条件下加入钴离子前后DNA-Co(NH₃)₆]³⁺混合物的流体力学半径从203.8 nm减小到39.26 nm.     

关于光激射器的线宽

本文从描述光激射器工作的基本方程出发,讨论了光激射器光束线宽的“短期”(short-time)部分。通常都以下式描写这部分线宽:△v_s=(8πhv(△v′)²)/P,(1)其中△v′是谐振腔电磁模的半宽度;v为光束频率;P为输出功率。我们的主要结论可以归结为以下三点:(1)线宽主要是由与电磁模耦合的耗散体系引起的,与分子耦合的耗散体系的贡献是可以忽略的;(2)在单模近似下,只要分子的线宽比电磁模的线宽大得多,则(1)式是正确的;(3)如果多模谐振腔中激发模与其他模之间的相互作用是强的,则式(1)将被推广为 △v_s=(8πhv(△v′)²)/P+(4hv(△v′))/P somefromn=(λ′≠λ)(r_λλ′²/(rλ′),(2) 其中r_λλ′是相关弛豫系数;r_λ′是模λ′的线宽。在某些情况下,式(2)中第二项可以比其第一项还大。所以,这可能是目前关于线宽的实验结果与由式(1)计算结果不相符合的原因之一。     

Amorphous to crystalline phase transition in pulsed laser deposited silicon carbide

SiC thin films were grown on Si (1 0 0) substrates by excimer laser ablation of a SiC target in vacuum. The effect of deposition temperature (up to 950 °C), post-deposition annealing and laser energy on the nanostructure, bonding and crystalline properties of the films was studied, in order to elucidate their transition from an amorphous to a crystalline phase. Infra-red spectroscopy shows that growth at temperatures greater than 600 °C produces layers with increasingly uniform environment of the Si-C bonds, while the appearance of large crystallites is detected, by X-ray diffraction, at 800 °C. Electron paramagnetic resonance confirms the presence of clustered paramagnetic centers within the sp² carbon domains. Increasing deposition temperature leads to a decrease of the spin density and to a temperature-dependent component of the EPR linewidth induced by spin hopping. For films grown below 650 °C, post-deposition annealing at 1100 °C reduces the spin density as a result of a more uniform Si-C nanostructure, though large scale crystallization is not observed. For greater deposition temperatures, annealing leads to little changes in the bonding properties, but suppresses the temperature dependent component of the EPR linewidth. These findings are explained by a relaxation of the stress in the layers, through the annealing of the bond angle disorder that inhibits spin hopping processes.     

YIG和BCVIG中铁磁共振线宽各向异性的可能起因

由于磁弹耦合,应力等效为各向异性场并对磁化强度分布发生影响。借助这一机制阐明了机械抛光的YIG和BCVIG单晶球铁磁共振线宽的各向异性行为,指明机械抛光造成的表面损伤层引起的应力通过磁致伸缩的各向异性使弛豫时间各方向不同,即产生了线宽的各向异性。若损伤层主要由位错组成,按微磁学理论和双磁振子散射模型可得到位错密度、磁致伸缩、磁化强度等与线宽的关系。从测量到的线宽各向异性估算了3μm抛光的YIG的表面层位错密度为5.4×10¹⁰/cm²。该弛豫机制表明,进一步降低多晶小线宽材料的线宽,减小磁致伸缩系数可能是有效途径。 关键词：     

Effect of annealing in vacuum on the magnetic anisotropy of Ag-doped CdCr2Se4 crystals

Angular dependences of resonance field and linewidth have been measured for ferromagnetic CdCr₂Se₄ crystal doped with 1.5 mol.% Ag before and after annealing in vacuum. The change of the sign of anisotropy due to annealing is associated with transformations Cr⁴⁺→Cr³⁺→Cr²⁺. On the basis of obtained data some suppositions are made about the mechanisms of conductivity in the Ag-doped CdCr₂Se₄ crystal.     

Application of synchrotron radiation to investigation of the mechanism of increase in the yield of alkali metal ions in electron-stimulated desorption

Core-level photoelectron spectroscopy with synchrotron radiation (hv = 140 eV) has been applied to study the variation in the Si⁺ charge state in silicon films deposited on the W(100) surface after thermal annealing of the substrate. The purpose of this study is to check the mechanism responsible for the sharp increase in the yield of Na⁺ ions in electron-stimulated desorption from a sodium layer adsorbed on the Si/W(100) surface after high-temperature annealing. The evolution of the W 4f _7/2 and Si 2p photoelectron spectra and the valence band photoemission spectra is investigated for two silicon coverages (1 and 3 ML) on the W(100) surface in the temperature range 300<T<2200 K. It is shown that annealing of 1 ML Si on the W(100) surface results in the formation of a W-Si covalent bond, which can weaken the Si-Na bond and lead to an increase in the equilibrium distance X ₀ and, hence, to an increase in the yield of Na⁺ ions in electron-stimulated desorption. The variation in the photoelectron spectra under annealing of 3 ML Si differs from that observed after annealing of 1 ML Si in the direction of charge transfer, thus correlating with the opposite effect of annealing of 3 ML Si/W on the Na⁺ yield in electron-stimulated desorption.     

Characterization of RuO2 thin films by Raman spectroscopy

Raman scattering has been used as a technique for the characterization of RuO₂ thin films deposited on different substrates by the metal-organic chemical vapor deposition method and reactive sputtering under various conditions. Red shift and broadening of the linewidth of the Raman peaks are analyzed by the spatial correlation model. The intrinsic linewidth for the RuO₂ films deposited at high and low temperatures has to be adjusted to different values to achieve a good fit for the features. The lineshape and position of the Raman features vary for films deposited on different substrates under the same condition. These differences indicate the existence of stress induced by lattice mismatch and the differential thermal expansion coefficients between RuO₂ and the substrates. After annealing at 650°C in an oxygen atmosphere for 3 h, the linewidth decreases significantly for the RuO₂ thin films deposited at lower temperatures. The results show the improvement of the crystallinity of the films during the annealing process.     

Stress-induced textures in polymers

The effect of an applied stress on the annealing texture of polyethylene is demonstrated by means of stress annealing experiments. Cold-drawn polyethylene specimens were annealed for various times at 126°C with and without a compression stress of 0.4 kg/mm² normal to the drawing direction. The observed change in the annealing texture resulting from the compression stress indicates that stress-induced alignment of the crystalline regions in the polyethylene occurs (stress-induced texture). The alignment may be understood in terms of the elastic energy stored in the material during annealing. The stored elastic energy is minimized by aligning the crystallites such that the crystallographic direction of lowest modulus is parallel to the direction of the applied stress. The importance of this observation for the interpretation of the high-temperature deformation textures of polymers is discussed.     

色散关系和纵向耦合腔(C3)对半导体激光器的模谱行为的影响

本文从理论上探讨了色散关系的作用,引进α_e和F因数,修正了半导体激光器的光谱线宽公式,发现通过波导结构的设计不但可减小α_e因数,还可增大F因数来进一步抑制光谱线宽,用所提出的等效反射率法分析了纵向耦合腔(C³)的选模和压缩线宽的机制,指出实现单纵模窄线宽的条件。 关键词：     

Ion beam exposure of resists

Problems caused by the statistical variation of the number of exposing ions in ionbeam lithography are discussed. Using Poisson statistics, the minimum dose required for exposure as a function of resist sensitivity and minimum feature size is calculated. It is found that, although ion-beam resists show a very high sensitivity of 10¹¹ to 10¹³,cm^–2, it would be possible to use still more sensitive resists and obtain submicron linewidth resolution.     

Correlation between film thickness and zinc defect distribution along the growth direction in an isotopic multilayer ZnO thin film grown by pulsed laser deposition analyzed using the internal diffusion method

Zinc self-diffusion along the growth direction was analyzed for the isotopic multilayer ZnO thin film ((⁶⁴ZnO/⁶⁸ZnO)₆⁶⁴ZnO) deposited by pulsed laser deposition. The isotopic distribution was measured using a secondary ion mass spectrometry. The amplitude of the ⁶⁴Zn abundance in the depth profile was reduced by annealing at 993 K for several hours due to interdiffusion between the ⁶⁴ZnO and ⁶⁸ZnO layers. The diffusion profiles at the isotopic interfaces were analyzed using a periodic equation. The obtained zinc self-diffusion coefficients at several isotopic interfaces along the growth direction showed that the self-diffusion coefficients increased towards the film/substrate interface. A similar trend was also found in the lateral direction. The variation among the self-diffusion coefficients was related to the film thicknesses at the analysis positions. Since zinc self-diffusion is controlled by a vacancy-mediated mechanism, the variation in zinc diffusivity along the growth direction can be attributed to the effect of compressive biaxial stress. These findings are useful for producing high-quality ZnO devices.