Dissociative adsorption and site specificity in the initial stages of tetraethoxysilane (TEOS) interaction with Si(111)-(7×7)

We report results of a scanning tunneling microscopy and X-ray photoelectron spectroscopy study on the interaction of tetraethoxysilane (TEOS), a precursor for chemical vapor deposition of silicon dioxide, with Si(111)-(7×7) at room temperature. Under these conditions the interaction of TEOS with the surface is predominantly dissociative. The main adsorption products are ethyl- and triethoxysiloxane groups, which probably evolve in a four-center reaction of TEOS with two neighboring surface dangling bonds. Adsorption of the dissociation products is highly site-selective: triethoxysiloxane groups adsorb on the Si adatoms while ethyl groups react with the rest-atom dangling bonds. Center adatoms are over three times more reactive towards this reaction than corner adatoms. This two-fold selectivity is explained within the concept of local electron donor/acceptor properties.     

Atomic structure of β-SiC(100) surfaces: an ab initio study

We examine several different reconstructions of the β-SiC(100) surface by the ab initio Car-Parrinello method. Our results confirm that the lowest energy c(2 × 2) reconstructed surface consists of triply bonded carbon dimers in a bridging position between neighboring underlying silicon dimers. Added hydrogen atoms bond to the carbon dimers, resulting in a lengthened double-bonded dimer, and a larger separation for the underlying silicon dimers, although those Si bonds do not disappear. The most stable structure found for the (3 × 2) reconstructed surface with a 1/3 monolayer excess of silicon is an alternate dimer row structure rather than the added dimer row model proposed by others. The energetics of various surface reactions that may be involved in growth of SiC are discussed.     

Steps and facets on annealed LaAlO3{100} and {110} surfaces

Lanthanum-aluminate (LaAlO₃) is one of the optimum substrates for epitaxic growth of thin oxide films. In this paper, the structures of the {100} and {110} surfaces of annealed LaAlO₃ are studied using reflection electron microscopy (REM). 010 steps have been observed on {100}, these are the lowest energy steps. The {100} surface is atomically flat, but the {110} surfaces exhibit high-density fine structures distributed on large surface terraces. These fine structures correspond to the formation of small width (100) and (010) facets on the (110) surface. A growth model is given to interpret the formation of large steps and large terraces on the {110} surfaces.     

Correlation between shapes of Shockley stacking faults and structures of basal plane dislocations in 4H-SiC epilayers

Abstract

Shockley-type stacking faults expanded in 4H–SiC epilayers induced by ultraviolet illumination were investigated using a photoluminescence imaging method, a photoluminescence mapping method and X-ray topography. After ultraviolet illumination, more than 30 patterns of Shockley-type stacking faults which expanded from perfect basal plane dislocations were observed by photoluminescence imaging. The initial basal plane dislocations were crystallographically classified, and individual shapes of expanded Shockley-type stacking faults were predicted. The correspondence between the predicted shapes and observed ones was discussed.     

Regular step formation on concave-shaped surfaces on 6H–SiC(0 0 0 1)

A concave-shaped surface has been prepared in a 6H–SiC(0 0 0 1) substrate by mechanical grinding. As a consequence, the different crystallographic planes building up the 6H–SiC polytype are cut under continuously changing polar angles in all azimuthal directions. Through hydrogen etching, this curved surface breaks up into a whole set of surfaces vicinal to the initial 6H(0 0 0 1) orientation. The local structural reorganisation after hydrogen etching has been studied by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Two types of local bond environments are present at the step edges leading to a strong anisotropy in the surface etching with hydrogen. As a result, the distribution of the terrace width and the step heights varies with the azimuthal angle and reflects the sixfold symmetry of the bulk crystal. For most azimuthal directions, an alternation of large and small terraces, separated by steps of 0.75 nm heights (height of half the 6H polytype, three bilayers) is observed and only for well defined azimuthal directions, equally spaced terraces separated by steps of 1.5 nm height (one unit cell of 6H–SiC, six bilayers) are found. In addition, the polar variations have been studied by taking various line-scans along the concave-shaped surface with AFM. It seems that for polar angles above 3°, step bunching of several SiC steps occurs whereas below 3° the bimodal terrace width distribution is observed.     

Chemisorption and reactivity of furan on Pd{111}

XPS, HREELS, ARUPS and Δø data show that furan chemisorbs non-dissociatively on Pd{111} at 175 K, the molecular plane being significantly tilted with respect to the surface normal. Bonding involves both the oxygen lone pair and significant π interaction with the substrate. The degree of decomposition that accompanies molecular desorption is a strong function of coverage: 40% of the adsorbate desorbs molecularly from the saturated monolayer. Decomposition occurs via decarbonylation to yield CO_a and H_a followed by desorption rate limited loss of H₂ and CO. It seems probable that an adsorbed C₃H₃ species formed during this process undergoes subsequent stepwise dehydrogenation ultimately yielding H₂ and C_a.     

Epitaxial growth of boron nitride on a Rh(1 1 1) multilayer system: Formation and fine tuning of a BN-nanomesh

The epitaxial growth of boron nitride on the surface of a Rh-YSZ-Si(1 1 1) multilayer system by CVD of borazine (HNBH)₃ was investigated by low energy electron diffraction (LEED). The formation of a (14 × 14) h-BN on (13 × 13) Rh-YSZ-Si(1 1 1) superstructure was observed, which is different in size from an already reported (13 × 13) h-BN on (12 × 12) Rh(1 1 1) superstructure grown on a Rh(1 1 1) single crystal substrate (“h-BN-nanomesh”). We found hints that differences between the thermal expansion behaviour of the multilayer substrates and the single crystal substrate can be the reason for the formation of different sized superstructures.     

Surface reactions of monoethylgermane on Si(100)-(2×1)

The adsorption and decomposition of monoethylgermane (GeH₃Et) on the Si(100)-(2×1) surface was investigated with the intent of elucidating the surface processes leading to the deposition of germanium. The low-temperature adsorption of the molecule was explored, as well as its thermal decomposition. H₂ and C₂H₄ are observed as the desorption products in temperature-programmed desorption experiments. The ethylene is produced by a hydride elimination reaction within the adsorbed ethyl groups. The amount of Ge which can be deposited in a reaction cycle is correlated with the number of sites occupied by the ethyl groups upon the dissociation of GeH₃Et.     

RHEED studies during growth of TiN/SiNx/TiN trilayers on MgO(0 0 1)

TiN/SiN_x/TiN(0 0 1) trilayers have been deposited on MgO(0 0 1) substrates using ultra-high vacuum based reactive magnetron sputtering and studied by in situ reflection high energy electron diffraction (RHEED). Depositions were carried out at 500 °C and 800 °C, with SiN_x layer thicknesses between 3 and 300 Å. Here, we find that SiN_x(0 0 1) layers grown at 800 °C exhibit 1 × 4 surface reconstructions along orthogonal 〈1 1 0〉 directions up to a critical thickness of ∼9 Å, where an amorphous phase forms. Growth of TiN overlayers on the reconstructed SiN_x(0 0 1) layers yield RHEED patterns indicating the growth of (0 0 1)-oriented epitaxial layers with a 1 × 1 reconstruction. For the case of amorphous SiN_x layers the TiN overlayers grow polycrystalline.     

Core-level shifts of InP(1 0 0)(2 × 4) surface: Theory and experiment

Surface core-level shifts (SCLSs) of the (2 × 4)-reconstructed InP(1 0 0) surface with the established mixed In–P dimer structure have been investigated by first-principles calculations and photoelectron spectroscopy. Theoretical values were calculated using both the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange-correlation energy functional. The obtained theoretical values are quite similar within both approximations. The found differences originate in the tiny structural differences. It is concluded that the expansion or contraction of the crystal lattice has smaller effect on the SCLSs than the geometrical details of the reconstruction, which suggests that the Madelung potential has the dominant effect on the SCLSs. The results support the presence of a P 2p peak at higher binding energy (BE) compared to bulk peak, as proposed with recent measurements [P. Laukkanen, J. Pakarinen, M. Ahola-Tuomi, M. Kuzmin, R. E. Perälä, I. J. Väyrynen, A. Tukiainen, V. Rimpiläinen, M. Pessa, M. Adell, J. Sadowski, Surf. Sci. 600 (2006) 3022], and reveal several hitherto not reported SCLSs. The calculated SCLSs reproduce the measured spectra within reasonable accuracy. Furthermore, the atomic origins of the InP(1 0 0)(2 × 4) SCLSs are solved. In particular, it is shown that the lowest SCLS of P 2p of the InP(1 0 0)(2 × 4) arises from the topmost In–P dimers.     

Dimensional evolution of silicon nanowires synthesized by Au–Si island-catalyzed chemical vapor deposition

This study explores the nucleation and morphological evolution of silicon nanowires (Si-NWs) on Si (0 0 1) and (1 1 1) substrates synthesized using nanoscale Au–Si island-catalyzed rapid thermal chemical vapor deposition. The Au–Si islands are formed by Au thin film (1.2–3.0 nm) deposition at room temperature followed by annealing at 700 °C, which are employed as a liquid-droplet catalysis during the growth of the Si-NWs. The Si-NWs are grown by exposing the substrates with Au–Si islands to a mixture of gasses SiH₄ and H₂. The growth temperatures and the pressures are 500–600 °C and 0.1–1.0 Torr, respectively. We found a critical thickness of the Au film for Si-NWs nucleation at a given growth condition. Also, we observed that the dimensional evolution of the NWs significantly depends on the growth pressure and temperature. The resulting NWs are 30–100 nm in diameter and 0.4–12.0 μm in length. For Si (0 0 1) substrates 80% of the NWs are aligned along the 1 1 1 direction which are 30° and 60° with respect to the substrate surface while for Si (1 1 1) most of the NWs are aligned vertically along the 1 1 1 direction. In particular, we observed that there appears to be two types of NWs; one with a straight and another with a tapered shape. The morphological and dimensional evolution of the Si-NWs is significantly related to atomic diffusion kinetics and energetics in the vapor–liquid–solid processes.     

Influence of the surface-termination of hexagonal SiC(0 0 0 1) on the temperature dependences of Ge growth modes and desorption

With the aim of comparing initial Ge adsorption and desorption modes on different surface terminations of 4H-SiC(0 0 0 1) faces, 3 × 3, √3×√3R30° (R3) and 6√3×6√3R30° (6R3) reconstructions, of decreasing Si surface richness, have been prepared by standard surface preparation procedures. They are controlled by reflection high energy electron diffraction (RHEED), low energy electron diffraction and photoemission. One monolayer of Ge has been deposited similarly at room temperature on each of these three surfaces, followed by the same set of isochronal heatings at increasing temperatures up to complete Ge desorption. At each step of heating, the structural and chemical status of the Ge ad-layer has been probed. Marked differences between the Si- (3 × 3 and R3) and C-rich (6R3) terminations have been obtained. Ge wetting layers are only obtained up to 400 °C on 3 × 3 and R3 surfaces in the form of a 4 × 4 reconstruction. The wetting is more complete on the R3 surface, whose atomic structure is the closest to an ideally Si-terminated 1 × 1 SiC surface. At higher temperatures, the wetting layer stage transiets in Ge polycrystallites followed by the unexpected appearance on the 3 × 3 surface of a more ordered Si island structure. It denotes a Si clustering of the initial Si 3 × 3 excess, induced by the presence of Ge. A phase separation mechanism between Si and Ge prevails therefore over alloying by Ge supply onto a such Si-terminated 3 × 3 surface. Conversely, no wetting is obtained on the 6R3 surface and island formation of exclusively pure Ge takes place already at low temperature. These islands exhibit a better epitaxial relationship characterized by Ge(1 1 1)//SiC(0 0 0 1) and Ge〈1 1 −2〉//SiC〈1 −1 0 0〉, ascertained by a clear RHEED spot pattern. The absence of any Ge-C bond signature in the X-ray photoelectron spectroscopy Ge core lines indicates a dominant island nucleation on heterogeneous regions of the surface denuded by the 6R3 graphite pavings. Owing to the used annealing cycles, the deposited Ge amount desorbs on the three surfaces at differentiated temperatures ranging from 950 to 1200 °C. These differences probably reflect the varying morphologies formed at lower temperature on the different surfaces. Considering all these results, the use of imperfect 6R3 surfaces appears to be suited to promote the formation of pure and coherent Ge islands on SiC.     

Influence of the ferroelastic twin domain structure on the {100} surface morphology of LaAlO3 HTSC substrates

LaAlO₃ crystals have been investigated with differential scanning calorimetry (DSC), high-precision X-ray powder diffraction (XRD) and scanning force microscopy (SFM). The DSC measurements show the second-order phase transition of LaAlO₃ at 544°C, where LaAlO₃ changes its symmetry from the cubic Pm3m high-temperature phase to the pseudocubic rhombohedral low-temperature phase. This paraelastic to improper ferroelastic phase transition causes twinning in the {100} and {110} planes of the pseudocubic lattice. The twin angles between the surface {100}_pseudocubic planes of twin domains were measured by SFM on the surface of a macroscopic (100)_cubic cut crystal plate. The misorientation angle ω₁₀₀ between {100} twins is 0.195(8)°, while {110} twinning gives an angle of ω₁₁₀=0.276(7)°. The two twin kink angles correspond to a rhombohedral angle of the pseudocubic cell of the phase as ₁=90.0973(40)° and ₂=90.0975(30)°, respectively. The XRD result for this rhombohedral angle is =90.096(1)°. The orientation of the misfit steps formed during annealing after mechanical surface polishing depends on the domain orientation and pattern during polishing. Any heating close to or above T_c changes the domain pattern. Footprints of previous domain patterns can thus be found on the surface in the form of surface corrugation and changes in the shape and orientation of misfit steps.     

Theoretical studies of Sm/Si(1 1 1)–n × 1 (n = 5, 7) and Sm/Si(1 1 1)–(8 × 2) structures

In this study we employ a state-of-the-art pseudopotential method to perform local density of states (LDOS) calculations of n × 1 (n = 5, 7) and (8 × 2) reconstructions induced by the adsorption of rare-earth samarium (RE) in the submonolayer range. We conducted a full comparison between images from scanning tunneling microscopy (STM) and theoretical LDOS. Images taken of both filled and empty states show the effects induced by honeycomb chains and Seiwatz chains. We conclude that LDOS calculations are consistent with the assignment of features observed experimentally by STM.     

Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (0 0 1)-c(4×4) surfaces

Microscopic topological and spectroscopic properties of MBE-grown GaAs c(4×4) surfaces without and with monolayer Si deposition were investigated by the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Empty state STM images on as-grown surface showed bright and dark cells, and they exhibited strong correlation with the spatial distribution of normal and anomalous conductance gaps of the STS spectra. Bias dependent STM images indicated presence of pinning areas with continuous space and energy distribution of surface gap states. By deposition of monolayer Si, dark areas reduced a great deal and the rate of finding normal STS spectra increased, indicating large reduction of surface states.     

Covalent binding of cyclohexene, 1,3-cyclohexadiene and 1,4-cyclohexadiene on Si(1 1 1)-7 × 7

The adsorption reactions and binding configurations of cyclohexene, 1,3-cyclohexadiene and 1,4-cyclohexadiene on Si(1 1 1)-7 × 7 were studied using high-resolution electron energy loss spectroscopy (HREELS), ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and DFT calculation. The covalent attachments of these unsaturated hydrocarbons to Si(1 1 1)-7 × 7 through the formation of Si–C linkages are clearly demonstrated by the observation of the Si–C stretching mode at 450–500 cm⁻¹ in their HREELS spectra. For chemisorbed cyclohexene, the involvement of π_C=C in binding is further supported by the absence of C=C stretching modes and the disappearance of the π_C=C photoemission. The chemisorption of both 1,3-cyclohexadiene and 1,4-cyclohexadiene leads to the formation of cyclohexene-like intermediates through di-σ bonding. The existence of one π_C=C bond in their chemisorbed states is confirmed by the observation of the C=C and (sp²)C---H stretching modes and the UPS and XPS results. DFT calculations show that [4 + 2]-like cycloaddition is thermodynamically preferred for 1,3-cyclohexadiene on Si(1 1 1)-7 × 7, but a [2 + 2]-like reaction mechanism is proposed for the covalent attachment of cyclohexene and 1,4-cyclohexadiene.     

A core level and valence band photoemission study of the (1 1 1) and ( ) surfaces of 3C–SiC

A core level and valence band photoemission study of thick 3C–SiC(1 1 1) and 3C–SiC( ) epilayers grown by sublimation epitaxy is reported. The as introduced samples show threefold 1×1 low-energy electron diffraction patterns. For the Si face and reconstructed surfaces develop after in situ heating to 1100°C and 1300°C, respectively. For the C face a 3×3 reconstruction form after heating to 980°C. A semiconducting behavior is observed for the and 3×3 reconstructed surfaces while the reconstruction show a Fermi edge and thus a metallic-like behavior. The surface state on the surface is investigated and found to have Λ₁ symmetry and a total band width of 0.10 eV within the first surface Brillouin zone. For the Si 2p and C 1s core levels binding energies and surface shifted components are extracted and compared to earlier reported results for 6H– and 4H–SiC.     

Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces

The diamond nucleation has been studied on scratched Si(100) both by surface analyses (XPS, AES, ELS) and microstructural probes (AFM, SEM). Two pathways for diamond formation and growth are detected: A seeding pathway occurs by direct growth from part of diamond seeds left by the mechanical pretreatment. Not all of these seeds however are prone to diamond growth as they can be either dissolved or carburized. A nucleation pathway occurs through a stepwise process including the formation of extrinsic (pretreatment) or intrinsic (in situ) nucleation sites, followed by formation of carbon-based precursors. It is believed that nucleation sites could be either grooves of scratching lines or protrusions produced by etching-redeposition. The size of these protrusions is not larger than 100 nm. On top of these protrusions as well as on the bare substrate, a thin layer of silicon carbide rapidly forms and DLC carbon likely. This complex process on top of protrusions may constitute carbon-based embryos for further diamond nucleation. Received 21 December 1998     

Formation of a √3 × √3 surface on Si/Ge(1 1 1) studied by STM and LEED

We have performed a detailed study of the formation and the atomic structure of a √3 × √3 surface on Si/Ge(1 1 1) using both scanning tunneling microscopy (STM) and low energy electron diffraction (LEED). Both experimental methods confirm the presence of a √3 × √3 periodicity but unlike the Sn/Ge(1 1 1) and the Sn/Si(1 1 1) surfaces, the Si/Ge(1 1 1) surface is not well ordered. There is no long range order on the surface and the √3 × √3 reconstruction is made up of double rows of silicon atoms separated by disordered areas composed of germanium atoms.     

Study on the phase transitions by nuclear magnetic resonance of α-type RbAl(SO4)2·12H2O and β-type CsAl(SO4)2·12H2O single crystals

The thermodynamic properties, spin–lattice relaxation times, T₁, and spin–spin relaxation times, T₂, of the ²⁷Al, ⁸⁷Rb, and ¹³³Cs nuclei in MAl(SO₄)₂·12H₂O (M=Rb and Cs) crystals were investigated, and the two crystals were found to lose H₂O with increases in temperature. From our results for T₁ and T₂, we conclude that the discontinuities near T_d in the T₁ curves of the two crystals correspond to structural changes. In both crystals, below T_d the water molecules surrounding the Al³⁺ and M⁺ nuclei form distorted octahedra, whereas above T_d the water molecules around the Al³⁺ and M⁺ nuclei form regular octahedra and the environment of the Al³⁺ and M⁺ nuclei has cubic symmetry. Further, the T₁ for the ²⁷Al and ⁸⁷Rb nuclei in RbAl(SO₄)₂·12H₂O below T_d were found to increase with increasing temperature, whereas the T₁ for the ²⁷Al and ¹³³Cs nuclei in CsAl(SO₄)₂·12H₂O were found to decrease. It is possible that this difference is due to the different characteristics of α- and β-type crystals.