Effects of surface damage on critical current density in MgB2 thin films

We investigated the influence of surface damage on the critical current density (J_c) of MgB₂ thin films via 140-keV Co-ion irradiation. The J_c(H) of the surface-damaged MgB₂ films was remarkably improved in comparison with that of pristine films. The strong enhancement of J_c(H) caused by a surface damage in MgB₂ films can be ascribed to additional point defects along with an atomic lattice displacement introduced through low-energy Co-ion irradiation, which is consistent with the change in the pinning mechanism, from weak collective pinning to strong plastic pinning. The irreversible magnetic field (H_irr) at 5 K for surface-damaged MgB₂ films with a thickness of 850 and 1300 nm was increased by a factor of approximately 2 compared with that of a pristine film. These results show that the surface damage produced by low energy ion irradiation can serve as an effective pinning source to improve J_c(H) in a MgB₂ superconductor.     

MgB2 coated conductors directly grown on flexible metallic Hastelloy tapes by hybrid physical–chemical vapor deposition

MgB₂ coated conductors (CCs), which can avoid the low packing density problem of powder-in-tube (PIT) processed wires, can be a realistic solution for practical engineering applications. Here we report on the superior superconducting properties of MgB₂ CCs grown directly on the flexible metallic Hastelloy tapes without any buffer layer at various deposition temperatures from 520 to 600 °C by using hybrid physical–chemical vapor deposition (HPCVD) technique. The superconducting transition temperatures (T_c) are in the range of 38.5–39.4 K, comparable to bulk samples and high quality thin films. Clear (101) and (002) reflection peaks of MgB₂ are observed in the X-ray diffraction patterns without any indication of chemical reaction between MgB₂ and Hastelloy tapes. From scanning electron microscopy, it was found that connection between MgB₂ grains and voids strongly depend on the growth temperature. A systematic increase in the flux pinning force density and thereby the critical current density with decreasing growth temperature was observed for the MgB₂ CCs. The critical current density (J_c) of J_c(5 K, 0 T) ～10⁷ A/cm² and J_c(5 K, 2.5 T) ～10⁵ A/cm² has been obtained for the sample fabricated at a low growth temperature of 520 °C. The enhanced J_c (H) behavior can be understood on the basis of the variation in the microstructure of MgB₂ CCs with growth temperature.     

Flux pinning in columnar-structured and single crystalline MgB2 films

We have investigated the flux pinning effect of columnar grain boundary in columnar-structured and single crystalline MgB₂ films. The MgB₂ films with columnar structure showed much higher J_c than that of single crystalline thin film, and sample having smaller grain size had a higher J_c in high magnetic fields. At 5 K, the MgB₂ film with grain size of 460 nm showed an abnormal double-peak behavior in pining force density, F_p(B), caused by competition of different types of pinning sites, such as planar defects and point defects. Field dependences of F_p in columnar-structured films suggest that the columnar grain boundary is a strong pinning source in the MgB₂ film and it plays a crucial role in enhancing J_c over a wide range of magnetic fields and temperatures.     

Effect of SiC buffer layer on flux pinning property of MgB2 tapes

In this paper we aimed at investigating the flux pinning property of MgB₂ films on hastelloy tapes which are buffered on various thicknesses of SiC layers. We have observed that the increase in thickness of the SiC buffer layer is very closely related with the systematic improvement of the field dependence of the critical current densities (J_c) of MgB₂ tapes while the values of J_c decreased. According to the analysis of the pinning force density (F_p), there exist two pinning sources both in the pure MgB₂ and in the MgB₂ film with the thinnest SiC buffer layer. On the while, the pinning source observed in the MgB₂ films with thicker SiC buffer layers appears to be different from those previously mentioned. The different pinning behaviors of MgB₂ films may suggest that there be an additional pinning center working on the MgB₂ films with thick SiC buffer layers. The microstructural analyses of MgB₂ films confirmed that intra-granular defects and columnar grain boundaries may be a dominant pinning mechanism in the pure MgB₂ and the MgB₂ film with 170 nm-thick SiC buffer layer. For the MgB₂ films with thicker SiC buffer layers, carbon diffusion into the MgB₂ film, which is defined by the Auger electron spectroscopy, may be the origin of the additional pinning mechanism.     

MgB2 coated superconducting tapes with high critical current densities fabricated by hybrid physical-chemical vapor deposition

The MgB₂ coated superconducting tapes have been fabricated on textured Cu (0 0 1) and polycrystalline Hastelloy tapes using coated conductor technique, which has been developed for the second generation high temperature superconducting wires. The MgB₂/Cu tapes were fabricated over a wide temperature range of 460-520 °C by using hybrid physical-chemical vapor deposition (HPCVD) technique. The tapes exhibited the critical temperatures (T_c) ranging between 36 and 38 K with superconducting transition width (ΔT_c) of about 0.3-0.6 K. The highest critical current density (J_c) of 1.34 × 10⁵ A/cm² at 5 K under 3 T is obtained for the MgB₂/Cu tape grown at 460 °C. To further improve the flux pinning property of MgB₂ tapes, SiC is coated as an impurity layer on the Cu tape. In contrast to pure MgB₂/Cu tapes, the MgB₂ on SiC-coated Cu tapes exhibited opposite trend in the dependence of J_c with growth temperature. The improved flux pinning by the additional defects created by SiC-impurity layer along with the MgB₂ grain boundaries lead to strong improvement in J_c for the MgB₂/SiC/Cu tapes. The MgB₂/Hastelloy superconducting tapes fabricated at a temperature of 520 °C showed the critical temperatures ranging between 38.5 and 39.6 K. We obtained much higher J_c values over the wide field range for MgB₂/Hastelloy tapes than the previously reported data on other metallic substrates, such as Cu, SS, and Nb. The J_c values of J_c(20 K, 0 T) ∼5.8 × 10⁶ A/cm² and J_c(20 K, 1.5 T) ∼2.4 × 10⁵ A/cm² is obtained for the 2-μm-thick MgB₂/Hastelloy tape. This paper will review the merits of coated conductor approach along with the HPCVD technique to fabricate MgB₂ conductors with high T_c and J_c values which are useful for large scale applications.     

Concurrent doping effect of Ti and nano-diamond on flux pinning of MgB2

Nano-diamond and titanium concurrently doped MgB₂ nanocomposites have been prepared by solid state reaction method. The effects of carbon and Ti concurrent doping on J_c–H behavior and pinning force scaling features of MgB₂ have been investigated. Although T_c was slightly depressed, J_c of MgB₂ have been significantly improved by the nano-diamond doping, especially in the high field region. In the mean time, the J_c value in low field region is sustained though concurrent Ti doping. Microstructure analysis reveals that when nano-diamond was concurrently doped with titanium in MgB₂, a unique nanocomposite in which TiB₂ forms a thin layer surrounding MgB₂ grains whereas nano-diamond particles were wrapped inside the MgB₂ grains. Besides, nano-diamond doping results in a high density stress field in the MgB₂ samples, which may take responsibility for the Δκ pinning behavior in the carbon-doped MgB₂ system.     

Effect of grain-boundary flux pinning in MgB2 with columnar structure

We studied the flux pinning properties by grain boundaries in MgB₂ films prepared by using a hybrid physical chemical vapor deposition method on the c-axis oriented sapphire substrates. All the films we report here had the columnar grains with the growth direction perpendicular to the substrates and the grain sizes in the range of a few hundred nanometers. At very low magnetic fields, no discernable grain-boundary (GB) pinning effect was observed in all measuring temperatures, but above those fields, the effect of GB flux pinning was observed as enhanced critical current densities (J_cs) and reduced resistances when an external magnetic field (B) was aligned parallel to the c-axis. We interpret the B dependence of J_c in the terms of flux line lattice shear inside the columnar grains activated by dislocations of Frank–Read source while the flux lines pinned by GB act as anchors for dislocations. Magnetic field dependence of flux pinning force density for B parallel to the c-axis was reasonably explained by the above model.     

柠檬酸掺杂的MgB2超导体钉扎机理的研究

本文研究了柠檬酸掺杂的MgB₂超导材料的J_c-B行为及其钉扎机理.在纯MgB₂多晶样品中,δT_c钉扎起主要作用,而在掺杂的样品中,则是δl钉扎和δT_c钉扎共同作用,并且δl钉扎机理占主要作用,其贡献比重随着掺杂量的增加而增加.从J_c-B行为和钉扎行为的分析都可以得到 关键词： 柠檬酸 2')" href="#">MgB₂ T_c钉扎')" href="#">δT_c钉扎 l钉扎')" href="#">δl钉扎     

钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响

利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB₂超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB₂样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 10¹³/cm²的样品的临界电流密度达到了1.72× 10⁵ A/cm², 比干净的MgB₂要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.     

Irreversibility line and flux pinning properties in iron-based high-Tc superconductor SmFeAsO0.85

The irreversibility line and flux pinning properties of high-T_c superconductor SmFeAsO_0.85 were studied using DC magnetization data. Polycrystalline SmFeAsO_0.85 was prepared in a high pressure synthesis apparatus under the pressure of 6 GPa. The results of DC susceptibility showed the superconducting transition at about 55 K. A critical current density J_c(B) was calculated using Bean’s critical state model. At low temperatures (20 K), J_c(B) showed a relatively high value with weak dependence on an applied magnetic field. At higher temperatures, a stronger dependence of the magnetic field was observed, which resulted from decrease in a critical current density probably due to the flux creep effect. The irreversibility line (IL) agreed well with the flux creep theory of Matsushita et al. A comparison of normalized pinning force density with the theoretical models showed that the irreversible behavior in SmFeAsO_0.85 is dominated mainly by normal point pinning (δT_c) and surface pinning mechanisms.     

Spatial variation of superconducting properties of Gd123 Bulk superconductors with magnetic particles addition

Magnetic flux trapping and the homogeneity of the flux pinning are essential problems in the practical application of high-temperature superconductors. We have conducted study on the role of addition of soft magnetic Fe-B alloy particles contribute to the enhancement of the critical current density (J_c) under wide-range of magnetic field. Magnetic flux trapping was enhanced in Gd123 bulk superconductor with suitable amount of magnetic particles addition. In addition, it can be effective as pinning center enhance the J_c of the bulk in both the a–b growth sector and the c-growth sector under magnetic field. However, the T_c of the Gd123 bulk was decreased obviously by addition of magnetic particles. The study on the spatial variation of superconducting properties indicates that the performance of the upper part of the bulk is better than the bottom. By comparing the superconducting properties of the Gd123 bulk with magnetic particles addition and without magnetic particles addition, we concluded that there is a trace of the formation of homogeneous pinning properties in the magnetic particles addition Gd123 bulk.     

Effect of polymers doping on flux pinning behavior of MgB2

The effects of polymers doping on irreversibility field (H_irr) and critical current density (J_c) of MgB₂ have been investigated in this work. It is found that both J_c, and H_irr, are improved by doping at relative lower temperature region. The J_c−B curves of all samples studied in this work are well fitted using J_c(B) formula in percolation model. The values of upper critical field anisotropy (γ) are obtained from the fitting result at various temperatures. It is observed that values of γ for polymers doping samples are reduced at these temperatures. This is considered to be responsible for the enhancement of values of J_c for doped samples. Moreover, the percolation threshold, p_c, is found to be enhanced with increasing temperature. It is believed that the grain boundary pinning is still dominating in MgB₂, while the deviation of experimental data from the theoretical values is due to the percolation of suppercurrent in polycrystalline MgB₂.     

A possible role of amorphous regions at grain-boundary vertex points as linear defects on flux pinning in MgB2 films with columnar grain structure

We measured the transport properties of MgB₂ films having columnar grain structure with their axis normal to the substrate. When an external magnetic field was applied parallel to the grain axis, an enhanced critical current density has been observed, and this result has been ascribed to flux pinning induced by grain boundaries. The shape of the angular dependence of critical current density and its magnetic field dependence showed a quite similar resemblance to those of YBa₂Cu₃O_x films containing columnar defects, implying a possible existence of linear defects in MgB₂ films of columnar structure. We propose that the amorphous regions at the vertex points of three or more grain boundaries observed in microstructural studies correspond to the linear defects and these linear defects anchor the end points of the flux line dislocations of Frank-Read sources, by which the shear in the flux line lattice is actuated. This assumed mechanism is found to reasonably explain the magnetic field dependence of the flux pinning force density of MgB₂ films with columnar grain structure.     

SQUID法和Campbell法测量超导材料的研究

本文对比研究了超导材料磁测量中的SQUID法和Campbell法; 并用高压PIT法制备的超导材料MgB₂作为测量样品,用两种方法,测量了超导样品的临界电流密度, 分别得到了样品的J_c-B关系曲线; SQUID法测量样品的外磁场可以达到6 T, 此时材料已经处于失超状态,此方法测得的结果是样品各个小区域结果的平均值, SQUID还可以用来进一步标度材料的钉扎力行为,研究材料磁特性. Campbell法测量只能测量到外磁场强度为0.4 T,外磁场的交流部分的频率可以达到800 Hz, 用这种测量方法得到的是整块样品的电流,由于测量计及材料内部微观结构缺陷等影响电流传输因素, 所测结果小于直流磁化法,但更切近材料实际电流,能用来深入研究材料内部结构差别对材料电性能的影响.     

Comparison of carbon-doped MgB2 bulks fabricated from pre-synthesized Mg/CNT and Mg/amorphous carbon composites

MgB₂ samples containing 2.5 wt% multi-walled carbon nanotubes (CNTs) and amorphous carbon (nano-C) were sintered at 800 °C. The doped samples were prepared from Mg/CNT and Mg/nano-C composites, which were previously synthesized from coarse Mg and fine Mg by chemical vapor deposition, respectively. We made comparisons between the two samples on the C-doping level, the MgO contents, and the effects of the carbon source on critical current density (J _c) by investigating the phase composition, microstructure, and magnetic properties. Compared with pure MgB₂ (coarse Mg), the J _c performance at high field was improved in the CNT-doped sample (coarse Mg) due to the high C substitution level induced lattice defects as pinning centers. However, J _c values of the amorphous C-doped sample with sufficient C doping decreased over the entire field in contrast with the pure sample (fine Mg), which exhibited the highest J _c performance among the samples. This is attributed to the much more MgO impurities, mostly generated during the preparation of Mg/C composites, than the CNT-doped sample.     

Angular dependences of critical current density in YBCO thin films with crossed columnar defects

We investigated the dependences of the critical current density J_c on the magnetic field angle θ in YBa₂Cu₃O_7−δ thin films with the crossed configurations of the columnar defects (CDs). To install the crossed CDs, the films were irradiated using the high energetic Xe ions at two angles relative to the c-axis. The additional peak around the c-axis appears in the J_c(θ) for all irradiated films. In lower magnetic fields, the height of the J_c(θ) peak caused by the crossed CDs with the crossing angles θ_i = ±10° was higher than that for the parallel CDs. It is considered that the correlation of the flux pinning by the crossed CDs along the c-axis occurs even in the case of θ_i = ±25°, which was also suggested by the kink behaviors of the scaling parameters of the current–voltage characteristics near 1/3 of the matching field. In higher magnetic fields, on the other hand, the height and width of the J_c(θ) peak for the crossed CD configurations rapidly reduce with increasing the magnetic field compared to the parallel ones. In the crossed CD configurations, the dispersion in the direction of CDs would prevent the correlation of flux pinning along the c-axis in high magnetic fields, which occurs in the parallel CD configurations due to the collective pinning of flux lines including the interstitial flux lines between the directly pinned flux lines by CDs.     

Deposition and characterization of YBCO films with BZO inclusions on single crystal substrate

YBa₂Cu₃O_7?δ thin films with BaZrO₃ (BZO) inclusions have been deposited on SrTiO₃ substrates in order to study the effect of nanoparticles addition into YBCO matrix. Samples with 7% (mol) BZO content were obtained by PLD varying the deposition conditions, in order to evaluate their effect on the films transport properties. The change in deposition parameters, especially of the deposition temperature, has been discovered to be efficient for a reduction or complete recovery of the critical temperature decrease produced by BZO addition. The effect of the deposition temperature on in-field films transport properties as well as on the presence of c-axis correlated defects typically ascribable to nanoparticles addition, can be recognised in an improvement in J_C retention in applied magnetic field and, for higher temperatures, the appearance of correlated pinning contribution, as confirmed by pinning force density measurements.     

The superconducting properties of Cu-doped MgB2 bulks prepared by a high-energy milling method

The Cu-doped MgB₂ bulks were prepared by a high-energy milling and subsequent sintering method. Compared to the pure and Cu-doped bulks prepared only by sintering, the critical current density (J_c) of the milled Cu-doped samples was improved with a slight decrease in critical transition temperature (T_c). Using the phase analysis and microstructure observation, it has been found that the MgB₂ grains in the milled Cu-doped sample was refined with the high-energy milling and thus provided more grain boundary pinning, which was contributed to the improvement of J_c at high field.     

Enhanced flux pinning in pulsed laser deposited Y Ba2Cu3O7−δ : BaTiO3 nanocomposite thin films

The effect of incorporation of BaTiO₃(BTO) nanoparticles on the flux pinning properties of pulsed laser deposited YBCO:BTO thin films was studied. Substantial increase in the critical current density (J_C) and the pinning force density (F_p) of the nanocomposite thin films was observed. At 77 K, and zero applied magnetic field, the value of J_C for YBCO and YBCO:BTO (2%) thin films were 2.93 MA/cm² and 6.43 MA/cm², respectively. At the same temperature and an applied magnetic field of 4 T, the value of J_C increases from 3.6×10⁴ A/cm² for YBCO thin film to 2.7×10⁵ A/cm² for YBCO:BTO (2%) nanocomposite thin film. The study of temperature and field dependence of of YBCO and YBCO:BTO thin films indicates similar type of pinning. The lattice mismatch between YBCO and BTO seems to introduce more defects resulting in the improvement of flux pinning properties.     

Sputtered magnesium diboride thin films: Growth conditions and surface morphology

Magnesium diboride (MgB₂) thin films were deposited on C-plane sapphire substrates by sputtering pure B and Mg targets at different substrate temperatures, and were followed by in situ annealing. A systematic study about the effects of the various growth and annealing parameters on the physical properties of MgB₂ thin films showed that the substrate temperature is the most critical factor that determines the superconducting transition temperature (T_c), while annealing plays a minor role. There was no superconducting transition in the thin films grown at room temperature without post-annealing. The highest T_c of the samples grown at room temperature after the optimized annealing was 22 K. As the temperature of the substrate (T_s) increased, T_c rose. However, the maximum T_s was limited due to the low magnesium sticking coefficient and thus the T_c value was limited as well. The highest T_c, 29 K, was obtained for the sample deposited at 180 °C, annealed at 620 °C, and was subsequently annealed a second time at 800 °C. Three-dimensional (3D) AFM images clearly demonstrated that the thin films with no transition, or very low T_c, did not have the well-developed MgB₂ grains while the films with higher T_c displayed the well-developed grains and smooth surface. Although the T_c of sputtered MgB₂ films in the current work is lower than that for the bulk and ex situ annealed thin films, this work presents an important step towards the fabrication of MgB₂ heterostructures using rather simple physical vapor deposition method such as sputtering.