Plasmonic enhancement of the vanadium dioxide phase transition induced by low-power laser irradiation

Nanocomposites consisting of gold nanoparticle (NP) arrays and vanadium dioxide (VO₂) thin films are noteworthy for the tunability of both their thermal and optical properties. The localized surface plasmon resonance (LSPR) of the Au can be tuned when its dielectric environment is modulated by the semiconducting-to-metal phase transition (SMT) of the VO₂; the LSPR itself can be altered by changing the shape of the NPs and the pitch of the NP array. In principle, then it should be possible to choose a combination of VO₂ film and Au LSPR properties that maximizes the overall optical response of the nanocomposite. To demonstrate this effect, transient transmission measurements were conducted on lithographically fabricated arrays of Au NPs of diameter 140?nm, array spacing 350 nm, and covered with a 60?nm thick films of VO₂ via pulsed laser deposition. Both Au::VO₂ nanocomposites and bare VO₂ film were irradiated with a shuttered 785?nm pump laser, and their optical response was probed at 1550?nm by a fixed-frequency diode laser. The Au::VO₂ nanocomposite exhibited an increased effective absorption coefficient 1.5 times that of the plain film and required 37?% less laser power to induce the SMT. The time-dependent temperature rise in the film as a function of laser intensity was calculated from these measurements and compared with both analytic and finite-element models. Our results suggest that Au::VO₂ nanocomposites may be useful in applications such as thermal-management coatings for energy efficient ??smart?? windows.     

Thermally- or optically-biased memristive switching in two-terminal VO2 devices

We investigated thermally- or optically-biased memristive switching in two-terminal micro devices based on vanadium dioxide (VO₂) thin films. For the preparation of multi-level resistance switching, the device was kept at a specific temperature or an optical illumination power so that it fell into the thermal or optical hysteresis region of the device resistance during the switching. With the application of external current pulses, the device resistance decreased in a discrete manner showing multiple resistance levels, each of which was maintained as long as the temperature (or optical) bias excited the device. In particular, in the optically-biased case, the effect of the pulse-free interval between current pulses on the device resistance was also examined with respect to three intervals including 10, 15, and 30 s. It was observed that a longer pulse-free interval and higher optical bias reduced the rate of current-induced change in the device resistance. Finally, in order to explore a trend of grain resistance change in the VO₂-based device, we carefully suggested a grain network model explaining a percolative transition in inhomogeneous VO₂ film.     

Measurement of oxygen transport kinetics in epitaxial La2NiO4+δ thin films by electrical conductivity relaxation

The oxygen transport kinetics of mixed ionic and electronic conducting La₂NiO₄ thin films made by pulsed laser deposition (PLD) were measured using the electrical conductivity relaxation (ECR) technique. Since the film thickness is ∼ 3000 Å, the oxygen transport kinetics are controlled by the surface exchange rate. The experimental data are not well described by the usual single time constant model for oxygen surface exchange, but a good fit is obtained using two independent time constants. This model implies that the La₂NiO₄ film consists of two independent regions with different exchange rates that correspond to two different film microstructures.     

The characteristics of Au:VO2 nanocomposite thin film for photo-electricity applications

Au nanoparticles have been fabricated on normal glass substrates using nanosphere lithography (NSL) method. Vanadium dioxide has been deposited on Au/glass by reactive radio frequency (rf) magnetron sputtering. The structure and composition were determined by X-ray diffraction and X-ray photoelectron spectroscope. Electrical and optical properties of bare VO₂ and Au:VO₂ nanocomposite thin films were measured. Typical hysteresis behavior and sharp phase transition were observed. Nanopartical Au could effectively reduce the transition temperature to 40 °C. The transmittance spectrum for both Au:VO₂ nanocomposite thin film shows high transmittance under transition temperature and low transmittance above transition temperature. The characteristics present the Au:VO₂ nanocomposite thin film can be used for applications, such as “smart window” or “laser protector”.     

Photoassisted chemical solution deposition method for fabricating uniformly epitaxial VO2 films

Epitaxial VO₂ films were prepared on the TiO₂ (001) substrates by the excimer-laser-assisted metal–organic deposition (ELAMOD). The quality of the epitaxial films obtained by irradiation with a KrF laser was found to be affected by the film structure obtained after preheating at 500 or 300°C. When the films containing crystal domains, which were obtained by preheating at 500°C, were irradiated with the laser at room temperature under a base pressure of 250 Pa, epitaxial and polycrystalline VO₂ phases were simultaneously formed. In contrast, when the amorphous films containing organic components, which were obtained by preheating at 300°C, were irradiated with the laser at room temperature in air, a single phase of epitaxial VO₂ was formed. By using thermal simulations, we determined that the formation of the epitaxial phase was affected both by the temperature distribution within the film during the laser irradiation and by the laser intensity at the interface between the substrate and the film. The latter factor is considered to play a role in the nucleation of crystallization, causing the epitaxial phase to form preferentially compared to the polycrystalline phase in the amorphous matrix of the films. These results indicate that the ELAMOD process is effective for the fabrication of epitaxial VO₂ films at low temperature.     

Enhancement of the positive emittance-switching performance of thermochromic VO2 films deposited on Al substrate for an efficient passive thermal control of spacecrafts

This work involves the study of the positive emittance-switching (i.e. emittance that increases with increasing the temperature) of thermochromic VO₂ films deposited using reactive pulsed laser deposition (RPLD) on Al substrates. The temperature dependence of the emittance of a 260 nm-thick VO₂ film on Al substrate revealed a maximum of the emittance of 0.29 around 68 °C. It is attributed to an increase in the infrared radiation absorption by the VO₂ film due to the coexistence of both insulating and metallic phases in the vicinity of the transition temperature of VO₂. The emittance tunability between 25 °C and 68 °C is 0.21. Since practical SRD application requires both high emittance at high temperature and large tunability, we demonstrate, by both simulation and fabrication, that these goals can be accomplished to some extent by a top dielectric a-Si:H/SiO₂ λ/4 stack layer. In fact, the addition of a-Si:H/SiO₂ λ/4 overlayer results in an increase of the maximum value of the emittance by 114% (from 0.29 to 0.62) as well as an increase of the tunability by 81% (from 0.21 to 0.38). This work reports an important improvement of the positive emittance-switching efficiency of the VO₂-based structures and holds promise for a new generation of smart radiator devices (SRDs) for a passive thermal control of spacecrafts.     

Fabrication and electrical characterization of Au/p-Si/STO/Au contact

Au/STO/p-Si/Au structure is fabricated using pulsed laser deposition technique at room temperature. The current–voltage (I–V) characteristics of the device show rectification behavior. Various junction parameters such as ideality factor, barrier height and series resistance is determined using conventional forward bias I–V characteristics, Cheung method and Norde’s function. Au/STO/p-Si/Au structure shows non-ideal diode characteristics with the value of ideality factor of ∼5.1 and barrier height of ∼0.40 eV.     

Electrical,optical and structural properties of pure and gold-coated VO2 thin films on quartz substrate

In the present study, vanadium dioxide films were grown on quartz glass substrate by reactive KrF laser ablation technique using a vanadium dioxide target. The gold films of various thicknesses were then deposited on the VO₂ film by sputtering technique. Films were characterized by X-ray diffraction to determine crystallography, by four-point probe to determine the electrical property and by double-beam spectrophotometry to determine optical reflection and transmission behaviour in the 200–2500 nm spectral region. The resistance per square of VO₂ thin film decreases by two orders of magnitude across the metal insulator transition (MIT). The optical transmittance and reflectance exhibits, strong temperature dependence in the infrared region without a significant change in the visible region for VO₂ thin films. The presence of gold layer on VO₂ films significantly reduces the resistance per square, the critical temperature and percentage transmittance of the materials.     

Growth of b-axis oriented VO2 thin films on glass substrates using ZnO buffer layer

VO₂ thin films are grown on glass substrates by pulsed laser deposition using vanadium metal as a target. In this study, a ZnO thin film was used as a buffer layer for the growth of VO₂ thin films on glass substrates. X-ray diffraction studies showed that the VO₂ thin film had b-axis preferential orientation on a c-axis oriented ZnO buffer layer. The thickness of the ZnO buffer layer and the oxygen pressure during VO₂ deposition were optimized to grow highly b-axis oriented VO₂ thin films. The metal-insulator transition properties of the VO₂ film samples were investigated in terms of infrared reflectance and electrical resistance with varying temperatures.     

Correlation between diode polarization and resistive switching polarity in Pt/TiO2/Pt memristive device

We have investigated the correlation between diode polarization and switching polarity in electroformed Pt/TiO₂/Pt memristive device. Before forming, the diode direction of the Pt/TiO₂/Pt device is reversible under the current pulses with varying current amplitude. The diode polarization arises from oxygen vacancy migration in fully depleted Pt/TiO₂/Pt films. The measurement results indicated that only the polarized diode can be electroformed and the metallic suboxide filament is created in parallel to the diode with a switching polarity dependent on the polarization of stack prior to forming. The non‐polar state inhibits field concentration at either end of the device at the specified current, preventing the electroforming. On and off state currents are measured at 0.2 V for 5 × 10⁴ s showing good retention, which is promising for non‐volatile memory application. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

In‐band pumped Ti:Tm:LiNbO3 waveguide amplifier and low threshold laser

The fabrication by diffusion doping and a detailed optical investigation of a Ti:Tm:LiNbO₃ waveguide amplifier and of a Fabry‐Pérot type Ti:Tm:LiNbO₃ laser are reported. Both devices are in‐band pumped by a laser diode at 1650 nm. The wave‐guide amplifier shows broad‐band optical gain in the wavelength range 1750 nm < λ < 1900 nm. The laser emits at 1890 nm, the longest emission wavelength of a Tm:LiNbO₃ laser reported so far; also 1850 nm emission could be demonstrated. Laser threshold (1890 nm) is at 4 mW coupled pump power; the slope efficiency is ∼13.3%. Properties and potential of both devices are analyzed by extensive modeling.     

1.34 μm fluorescence and laser properties of Nd:La0.11Y0.89VO4 crystal

For Nd:La_xY_1−xVO₄ (x = 0.11) crystal, the ⁴F_3/2 → ⁴I_13/2 transition property was investigated for the first time. The fluorescence peak of Nd:La_0.11Y_0.89VO₄ crystal exhibited obvious inhomogeneous broadening comparing with that of Nd:YVO₄ crystal. With laser diode array as pump source, 1.34 μm continuous-wave (CW) and active Q-switched laser operations based on ⁴F_3/2 → ⁴I_13/2 transition were realized. For CW laser operation, the maximum output power of 2.47, 2.13 W is obtained with slope efficiencies of 29.4%, 27.6%, and optical to optical conversion efficiency of 26.2%, 24.7%, respectively for a, c cut crystal samples. For acousto-optic (AO) Q-switched laser operation, the shortest pulse width, highest peak power and maximum pulse energy came from the a-cut sample, which were 13 ns, 2.69 kW and 35 μJ, respectively.     

Direct comparison of the electrical,optical, and structural phase transitions of VO2 on ZnO nanostructures

We examined the temperature-dependent electrical, optical, and structural properties of VO₂ on ZnO nanorods with different lengths in the temperature range from 30 to 100 °C. ZnO nanorods with a uniform length were grown on Al₂O₃ substrates using a metal organic chemical vapor deposition, and subsequently, VO₂ was ex-situ deposited on ZnO nanorods/Al₂O₃ templates using a sputtering deposition. The optical properties of the VO₂/ZnO nanorods were measured simultaneously with direct current (DC) resistance using the reflectivity of an infrared (IR) laser beam with a wavelength of 790 nm. The local structural properties around V atoms of VO₂/ZnO nanorods were simultaneously measured with the DC resistance using x-ray absorption fine structure at the V K edge. Direct comparison of the temperature-dependent resistance, IR reflectivity, and local structure reveals that an optical phase transition first occurs, a structural phase transition follows, and an insulator-to-metal transition finally appears during heating.     

New type Schottky diodes based on the heterostructure of transition metal oxides: p-La2/3Sr1/3VO3/n-TiO2

We make a new type of bipolar Schottky diodes using the p-type La_2/3Sr_1/3VO₃ (LSVO)/n-TiO₂ heterostructure. The p-type LSVO metal thin films are grown on various substrates using radio frequency magnetron co-sputtering deposition. We find that the LSVO film grown on anatase TiO₂ layer produce the lowest resistivity of 0.28 mΩ cm. We discover that the resistivity decreases with decreasing LSVO film thickness for LSVO/TiO₂/Si structures. Hall measurements are performed and the dielectric functions of LSVO films are measured. The effective mass of LSVO/TiO₂/Si is determined to be 2.54 ± 0.05 m₀. The current-voltage curves of the Schottky diodes of p-LSVO/n-TiO₂ is measured and is explained using band alignment diagram. We identify a new type of Schottky diode, where both electrons in n-TiO₂ and holes in p-LSVO can flow under bias.     

Improving the modulation efficiency of high-power distributed Bragg reflector tapered diode lasers

Different measures to improve the modulation efficiency of a distributed Bragg reflector tapered diode laser emitting at 1060 nm were investigated. Due to the 6-mm long cavity, the device reached an output power of 10 W with a nearly diffraction-limited beam quality. The input currents to the ridge-waveguide (RW) and tapered gain-region sections can be independently controlled. This allows a low-current modulation of the optical output power in the Watt range. Under optimized quasi-static conditions the power could be modulated between 0.2 and 3.1 W (4.8 W) by a variation of the RW current between 0 and 50 mA (350 mA). Due to the integrated 6th order surface Bragg grating the emission wavelength remains within the spectral range of 80 pm.     

The comparison of Ag–As33S67 films prepared by thermal evaporation (TE), spin-coating (SC) and a pulsed laser deposition (PLD)

Chalcogenide thin films could be prepared by many experimental methods resulting in some differences in structure and physicochemical properties of prepared films. In this work, the As₃₃S₆₇ amorphous films were prepared by three different preparation techniques: vacuum thermal evaporation (TE), pulsed laser deposition (PLD) and spin-coating (SC). A silver film was deposited on the top of the As₃₃S₆₇ films and photodoped.The X-ray diffraction analysis showed significant differences in arrangement between bulk glass and thin films and also among films themselves. The Raman spectroscopy showed that the Raman spectra of PLD film and bulk glass are almost similar. On the other hand, TE films contain higher amount of homopolar bonds As–As and S–S. The value of refractive index of As₃₃S₆₇ bulk glass was 2.31. All prepared films have lower index of refraction contrary to bulk glass, i.e. TE∼2.27, PLD∼2.20 and SC∼1.90. The increase of refractive index with silver concentration is shown either. The optical bandgap of undoped As–S prepared films was different: TE∼2.42 eV, PLD∼2.45 eV and SC∼2.54 eV.     

Fast and sensitive time-multiplexed gas sensing of multiple lines using a miniature telecom diode laser between 1529 nm and 1565 nm

High-sensitive multi-species detection around 1550 nm using a modulated grating Y-branch, MG-Y, diode laser tunable between 1529 nm and 1565 nm is presented. The MG-Y diode laser is based on the Vernier effect of two modulated gratings, and exhibits quasi-continuous tuning over 36 nm. Multi-species detection is achieved by fast sequential scanning of single absorption lines of CH₄, CO, C₂H₂, and CO₂ distributed over the tuning range of the diode laser. The laser wavelength is scanned about 10 GHz around each absorption line for 5 ms and this is followed by a discrete large jump in operating wavelength to the next line.     

Light-induced ultrafast phase transitions in VO2 thin film

Vanadium dioxide shows a passive and reversible change from a monoclinic insulator phase to a metallic tetragonal rutile structure when the sample temperature is close to and over 68 °C. As a kind of functional material, VO₂ thin films deposited on fused quartz substrates were successfully prepared by the pulsed laser deposition (PLD) technique. With laser illumination at 400 nm on the obtained films, the phase transition (PT) occurred. The observed light-induced PT was as fast as the laser pulse duration of 100 fs. Using a femtosecond laser system, the relaxation processes in VO₂ were studied by optical pump-probe spectroscopy. Upon a laser excitation an instantaneous response in the transient reflectivity and transmission was observed followed by a relatively longer relaxation process. The alteration is dependent on pump power. The change in reflectance reached a maximum value at a pump pulse energy between 7 and 14 mJ/cm². The observed PT is associated with the optical interband transition in VO₂ thin film. It suggests that with a pump laser illuminating on the film, excitation from the d_θ,? - state of valence band to the unoccupied excited mixed d_θ,?-π* - state of the conduction band in the insulator phase occurs, followed by a resonant transition to an unoccupied excited mixed d_θ,?-π* - state of the metallic phase band.     

Laser-based sensor for a coolant leak detection in a nuclear reactor

Currently, the nuclear industry needs strongly a reliable detection system to continuously monitor a coolant leak during a normal operation of reactors for the ensurance of nuclear safety. In this work, we propose a new device for the coolant leak detection based on tunable diode laser spectroscopy (TDLS) by using a compact diode laser. For the feasibility experiment, we established an experimental setup consisted of a near-IR diode laser with a wavelength of about 1392 nm, a home-made multi-pass cell and a sample injection system. The feasibility test was performed for the detection of the heavy water (D₂O) leaks which can happen in a pressurized heavy water reactor (PWHR). As a result, the device based on the TDLS is shown to be operated successfully in detecting a HDO molecule, which is generated from the leaked heavy water by an isotope exchange reaction between D₂O and H₂O. Additionally, it is suggested that the performance of the new device, such as sensitivity and stability, can be improved by adapting a cavity enhanced absorption spectroscopy and a compact DFB diode laser. We presume that this laser-based leak detector has several advantages over the conventional techniques currently employed in the nuclear power plant, such as radiation monitoring, humidity monitoring and FT-IR spectroscopy.     

Modeling of electrical and optical characteristics of near room-temperature CdS/ZnSe based NIR photodetectors

Results of modeled photodetector characteristics in (CdS/ZnSe)/BeTe multi-well diode with p–i–n polarity are reported. The dark current density (J–V) characteristics, the temperature dependence of zero-bias resistance area product (R₀A), the dynamic resistance as well as bias dependent dynamic resistance (R_d) and have been analyzed to investigate the mechanisms limiting the electrical performance of the modeled photodetectors. The quantum efficiency, the responsivity and the detectivity have been also studied as function of the operating wavelength. The suitability of the modeled photodetector is demonstrated by its feasibility of achieving good device performance near room temperature operating at 1.55 μm wavelength required for photodetection in optical communication. Quantum efficiency of ∼95%, responsivity ∼0.6 A/W and D^* ∼ 5.7 × 10¹⁰ cm Hz^1/2/W have been achieved at 300 K in X BeTe conduction band minimum.