Overcoming the thickness paradox: Systematical optimization of inverted polymer solar cells

Inverted structure comes out to be a promising alternative for making polymer solar cells (PSC) with high efficiency and long-term stability. Vertically stacked functional layers with planar shapes often suffer contradictions in holding high optical absorption and excellent charge transfer/hindrance capability to construct well performed inverted PSC devices. Here, we give an example of rational control of the thickness of electron transport layer (ETL), hole transport layer (HTL) and organic active layer (OAL) to achieve a synergistic effect on promoting the overall photovoltaic behaviors. With in-depth exploration of the interaction between device performance and layer thickness, we obtain the optimized device ITO/ZnO Ncs (45 nm)/P3HT:PCBM (70 nm)/MoO₃ (1 nm)/Ag (70 nm) exhibiting an V_oc of 0.63 V, J_sc of 12.52 mA/cm², FF of 54% and PCE of 4.26%.     

Analysis of hybrid donor layer in organic solar cells based on SubPc and rubrene

In this paper, photovoltaic characteristics of ITO/PEDOT:PSS/SubPc:Rubrene (mixed ratio R by weight)/C₆₀/Bphen/Ag organic solar cells (OSCs) are analyzed in detail. The intrinsic properties of a SubPc:rubrene doped layer on device performance were discussed based on theoretical analysis of the experimental OSCs. The ratio R was 0, 0.25, 0.5, and 0.75,1, respectively. The results showed that when R was 0.75 performing the best, which owned the highest short circuit current (J _sc ) 6.61 mA/cm² and highest power conversion efficiency (PCE) 2.44%, the FF was 41% and the open circuit current (V _oc ) was 0.905 V. The suitable HOMO level, absorption capacity, carrier transport ability and exciton diffusion length (L _D ) of organic material are very important for the performance of the device.     

Investigating the performance of P3HT:PCBM organic solar cells involving gamma-irradiated PEDOT:PSS layer

In this work, we investigated for the first time the characteristics of (poly (3-hexylthiopene) and [6, 6]-phenyl C61-butyric acid methyl ester) (P3HT:PCBM) blends-based organic solar cell with 1.25?mg/mL boric-acid (H₃BO₃)-doped poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) layer which is irradiated under the 40 Gray (Gy) dose of gamma (γ) ray. Experimental results showed that the parameters of solar cell improved with exposure to low-dose gamma radiation. In particular, it has provided a significant improvement in short-circuit current density (J_sc) and power conversion efficiency (PCE). About 49% increase in PCE to 1.22% and 40% increase in J_sc to 6.28?mA/cm² was obtained between the bare device and the device containing irradiated PEDOT:PSS:H₃BO₃. Also, it was determined that the H₃BO₃-doped PEDOT:PSS is more stable to temperature. More importantly, solar cell containing gamma-irradiated PEDOT:PSS:H₃BO₃ showed best performance comparing to conventional PEDOT:PSS-based cell.     

掺杂PEDOT ∶PSS对聚合物太阳能电池性能影响的研究

研究了掺杂后poly(3,4-ethylene dioxythiophene):poly(styrenesulphonic acid)(PEDOT ∶PSS)电导率的变化以及掺杂PEDOT ∶PSS薄膜对聚合物太阳能电池器件性能的影响. 实验发现,向PEDOT ∶PSS中掺入极性溶剂二甲基亚砜(DMSO)明显提高了薄膜的电导率,掺杂后的电导率最大值达到1.25 S/cm,比未掺杂时提高了3个数量级. 将掺杂的PEDOT ∶PSS薄膜作为缓冲层应用于聚合物电池 (ITO/PEDOT ∶PSS/P3HT ∶PCBM/LiF/Al) 中,发现高电导率的PEDOT ∶PSS降低了器件的串联电阻,增加了器件的短路电流,从而提高了器件的性能. 最好的聚合物太阳能电池在100 mW/cm²的光照下,开路电压(V_oc)为0.63 V,短路电流密度(J_sc)为11.09 mA·cm^-2,填充因子(FF)为63.7%,能量转换效率(η)达到4.45%. 关键词： PEDOT ∶PSS 电导率 聚合物太阳能电池 能量转换效率     

Ultrasonically sprayed-on perovskite solar cells-effects of organic cation on defect formation of CH3NH3PbI3 films

Methylammonium lead iodide (CH₃NH₃PbI₃) based perovskite having low degrees of the disorder is of great interest for optoelectronic and photovoltaic applications. In this work, a layer of CH₃NH₃PbI₃ was successfully prepared using an ultrasonically sprayed-nebulous method. Changes in structural and optical properties alongside with photo-induced charge separation and transportation behavior were systematically studied. The surface photovoltage spectra reveal a significant reduction of the density of deep defect states as the organic content was increased. It was observed that the measured values of Urbach energies decrease from 33.36 to 28.24 meV as the amount of organic content was increased to an optimum value. The best perovskite solar cells obtained using the sprayed-on approach exhibited a J_sc of 16.54 mA/cm², a V_oc of 0.99 V, and a FF of 62.4, resulting in an overall PCE of 10.09%.     

Enhancing the efficiency of TiO2–perovskite heterojunction solar cell via evaporating Cs2CO3 on TiO2

In a TiO₂–perovskite heterojunction solar cell (TiO₂–PHSC), besides the perovskite CH₃NH₃PbX₃, TiO₂ as one side of the TiO₂/CH₃NH₃PbX₃ heterojunction also plays an important role in the photovoltaic effect. In order to improve the performance of the TiO₂–PHSC with the structure of glass/FTO/compact TiO₂/mesoporous TiO₂/CH₃NH₃PbI_3–xCl_x /poly‐TPD (poly(N,N ′‐bis(4‐butylphenyl)‐N,N ′‐bis(phenyl)benzidine))/Au, a 2 nanometer thick Cs₂CO₃ layer is thermally evaporated on the mesoporous TiO₂ layer. The short‐circuit current density (J_sc) raises from 17.7 mA cm^–2 to 18.9 mA cm^–2, the open‐circuit voltage (V_oc) from 0.81 V to 0.87 V, and the fill factor (FF) from 55.2% to 67.3%; as a result, the power conservation efficiency (PCE) increases from 8.0% to 11.1% under AM 1.5G solar illumination (100 mW cm^–2). Moreover, in a TiO₂–PHSC free of mesoporous TiO₂, where Cs₂CO₃ is evaporated on the compact TiO₂ layer, the J_sc, V_oc, FF and PCE values increase from 16.0 mA cm^–2, 0.83 V, 50.8% and 6.7% to 17.9 mA cm^–2, 0.90 V, 59.3%, and 9.5%, respectively. The reasons of the PCE increase for either the first kind of TiO₂–PHSC or the mesoporous‐TiO₂‐free TiO₂–PHSC with a nanometer‐thick Cs₂CO₃ layer on mesoporous TiO₂ or compact TiO₂ are discussed. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Silicon heterojunction solar cell with amorphous silicon oxide buffer and microcrystalline silicon oxide contact layers

This Letter reports on the fabrication and characterization of silicon heterojunction solar cells with silicon oxide based buffer (intrinsic amorphous silicon oxide) and contact layers (doped microcrystalline silicon oxide) on flat p‐type wafers. The critical dependency of the cell performance on the front and rear buffer layer thickness reveals a trade‐off between the open circuit voltage V_oc and the fill factor FF. At the optimum, the highest efficiency of 18.5% (active area = 0.67 cm²) was achieved with V_oc = 664 mV, short circuit current J_sc = 35.7 mA/cm² and FF = 78.0%. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Improving efficiency of inverted perovskite solar cells via ethanolamine-doped PEDOT:PSS as hole transport layer

In order to fabricate high-performance inverted perovskite solar cells (PeSCs), an appropriate hole transport layer (HTL) is essential since it will affect the hole extraction at perovskite/HTL interface and determine the crystallization quality of the subsequent perovskite films. Herein, a facile and simple method is developed by adding ethanolamine (ETA) into poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as HTL. The doping of a low-concentration ETA can efficiently modify the electrical properties of the PEDOT:PSS film and lower the highest occupied molecular orbital (HOMO) level, which is more suitable for the hole extraction from the perovskite to HTL. Besides, ETA-doped PEDOT:PSS will create a perovskite film with larger grain size and higher crystallinity. Hence, the results show that the open-circuit voltage of the device increases from 0.99 V to 1.06 V, and the corresponding power conversion efficiency (PCE) increases from 14.68% to 19.16%. The alkaline nature of ethanolamine greatly neutralizes the acidity of PEDOT:PSS, and plays a role in protecting the anode, leading the stability of the devices to be improved significantly. After being stored for 2000 h, the PCE of ETA-doped PEDOT:PSS devices can maintain 84.2% of the initial value, which is much higher than 67.1% of undoped devices.     

Hydrothermal growth of large-scale macroporous TiO<Subscript>2</Subscript> nanowires and its application in 3D dye-sensitized solar cells

Large-scale macroporous TiO₂ nanowires (MTN) were directly grown on spiral-shaped titanium wires as photoanodes of dye-sensitized solar cells (DSSCs) via a facile hydrothermal reaction without any seeds, templates, and TiO₂ powder. The MTN thin film was characterized by SEM, XRD and TEM. The studies revealed that the MTN thin film had better mechanical properties and provided an efficient pathway for the diffusion of liquid electrolyte. The efficiency of 0.86% for the 3D DSSC was obtained with a J _sc of 2.30 mA/cm², V _oc of 616 mV, and FF of 0.61. This MNT-based mini 3D DSSC is a promising photovoltaic device for applications in the fields of high-integrated micro-electronic equipment.     

Interface investigation of planar hybrid n-Si/PEDOT:PSS solar cells with open circuit voltages up to 645 mV and efficiencies of 12.6 %

We have studied interface formation properties of hybrid n-Si/PEDOT:PSS solar cells on planar substrates by varying the silicon substrate doping concentration (N _D). Final power conversion efficiencies (PCE) of 12.6 % and open circuit voltages (V _oc) comparable to conventional diffused emitter pn junction solar cells have been achieved. It was observed, that an increase of N _D leads to an increase of V _oc with a maximal value of 645 mV, which is, to our knowledge, the highest reported value for n-Si/PEDOT:PSS interfaces. The dependence of the solar cell characteristics on N _D is analyzed and similarities to minority charge carrier drift-diffusion limited solar cells are presented. The results point out the potential of hybrid n-Si/PEDOT:PSS interfaces to fabricate high performance opto-electronic devices with cost-effective fabrication technologies.     

Fabrication of silicon microwire arrays for?photovoltaic?applications

A?novel method of combining photolithography, wet chemical etching and oxidation process was proposed to fabricate large area of silicon microwire (SiMW) arrays. The dimensions of the SiMWs can be easily controlled by photomask and etching conditions. Solar cells based on the heterojunction between SiMW and double-walled carbon nanotubes (DWNTs) were constructed. The initial test on the DWNT/SiMW shows efficiency (??) of?0.59%. By adding a few drops of HBr/B₂ electrolyte, the efficiency was improved to 1.96% with J _sc=19.2?mA/cm² and V _oc=0.35?V, FF=29.2%, showing the potential of SiMWs in photovoltaic applications.     

Polymer solar cells based on a PEDOT:PSS layer spin-coated under the action of an electric field

In the process of fabrication of polymer photovoltaic(PV) devices,poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS) thin film,acting as an anode buffer layer,is spin-coated under the action of an electric field.The PV devices with a PEDOT:PSS layer spin-coated under the action of a static electric field exhibit improved short-circuit current density(J sc) and power conversion efficiency(PCE).The investigation of morphology shows that the appropriate intensity of the electric field can increase the roughness of the surface of the PEDOT:PSS layer,which results in improved contact between the anode and hole transport layer and thus enhances the J sc of the devices.Chemical analysis is also provided by x-ray photoelectron spectroscopy(XPS) spectra.     

Functionalization of multi-walled carbon nanotubes (MWCNTs) with nitrogen plasma for photovoltaic device application

Multi-walled carbon nanotubes (MWCNTs) placed under nitrogen (N₂) and argon (Ar) microwave plasma in order to functionalize covalently their side walls with nitrogen containing groups. X-ray photoelectron spectroscopy (XPS) study shows surface modification of the MWCNTs with imine, amine, nitride and amide groups grafted on the side walls. Due to the functional groups, homogenous distribution of MWCNTs in solvent could be obtained. For photovoltaic device fabrication MWCNTs film was casted over n-Si wafer and poly(3-octylthiophene) solution was infiltered. Devices with functionalized MWCNTs show short circuit current density (J_sc), open circuit voltage (V_oc), fill factor (FF) and power conversion efficiency (η) as 1.8 mA/cm², 0.20 V, 24% and 0.086%, respectively. In the composite film functionalized MWCNTs facilitate photo induced charge separation and efficient holes transportation, suppressing recombination of photo generated charges.     

The impacts of LPCVD wrap-around on the performance of n-type tunnel oxide passivated contact c-Si solar cell

In this paper, Tunnel Oxide Passivated Contact (TOPCon) silicon solar cells with the industrial area (244.32 cm²) are fabricated on N-type silicon substrates. Both the ultra-thin tunnel oxide layer and phosphorus doped polycrystalline silicon (polysilicon) thin film are prepared by the LPCVD system. The wrap-around of polysilicon is observed on the surface of borosilicate glass (BSG). The polysilicon wrap-around can form a leakage current path, thus degrades the shunt resistance of solar cells, and leads to the degradation of solar cell efficiency. Different methods are adopted to treat the polysilicon wrap-around and improve shunt resistance of solar cells. The experimental results indicate that a chemical etching method can effectively solve the problem of polysilicon wrap-around and improve the performance of solar cells. Finally, a conversion efficiency of 22.81% has been achieved by our bifacial TOPCon solar cells, with V_oc of 702.6 mV, J_sc of 39.78 mA/cm² and FF of 81.62%.     

Nanocluster n-CdO thin film by sol-gel for solar cell applications

The nanocluster-CdO film was successfully synthesized by sol-gel method using cadmium acetate and 2-metoxyethanol as starting materials and monoethanolamine as a stabilizer. The structural properties of the CdO film were investigated by atomic force microscopy (AFM). AFM results indicate that the CdO film is consisted of nanoclusters with grain size of 75-85 nm. The optical band gap E_g of nanocluster-CdO film was found to be 2.27 eV. The heterostructure, formed from two semiconductor layers having different optical band gaps, p-Si/n-CdO is prepared as a solar cell device. The electrical properties of the device were characterized by current-voltage and capacitance-conductance-voltage methods. The photovoltaic properties of p-Si/n-CdO device have been investigated. The p-Si/n-CdO heterojunction solar cell shows the best values of V_oc = 0.41 and J_sc = 2.19 mA/cm² under AM1.5 illumination. It is evaluated that this work is useful as a basis for the search of nanomaterial CdO and more competitive p-Si/n-CdO based solar cells, despite the fact that V_oc and J_sc are lower than those reported in the literature.     

Effects of annealing on ion-implanted Si for interdigitated back contact solar cell

Effects of annealing on the properties of P- and B-implanted Si for interdigitated back contact (IBC) solar cells were investigated with annealing temperature of from 950 to 1050 °C. P-implanted samples annealed at 950 °C were enough to activate dopants and recover the damage by implantation. As the annealing temperature was increased, the diode properties of P-implanted samples were degraded, while that of B-implanted samples were improved. However, in order to activate an implanted B ion, B-implanted samples needed an annealing of above 1000 °C. The implied V_oc of lifetime samples by quasi-steady-state photoconductance decay followed the trend of diode properties on annealing temperature. Finally, IBC cell was fabricated with a two-step annealing at 1050 °C for B of the emitter and 950 °C for P of the front and back surface fields. The IBC cell had V_oc of 618 mV, J_sc of 35.1 mA/cm², FF of 78.8%, and the efficiency of 17.1% without surface texturing.     

Microwave-reduced graphene oxide for efficient and stable hole extraction layers of polymer solar cells

Microwave-assisted reduced graphene oxide (MR-GO) layer was applied to hole extraction layer (HEL) of polymer solar cells (PSCs) and was compared with the widely used poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) in bulk hetero-junction (BHJ) solar cells. The power conversion efficiency (PCE) of 3.57% was achieved with the MR-GO layer, which is 21% higher than that of PSCs with the conventional PEDOT:PSS HEL material. This enhancement of PCE is mainly attributed to the increase of short-circuit current density originated from the hydrophobic surface of the MR-GO layer. The hydrophobic graphene oxide surface is believed to improve wetting property and physical contact of active blends. In addition, the MR-GO interfacial layer is found to show the excellent device stability in atmospheric condition. The PCE of conventional PEDOT:PSS based PSCs showed total degradation when the device was exposed to atmospheric condition for 1000 h without any encapsulation, while that of MR-GO based PSC showed over 85% of PCE.     

The use of a perylenediimide derivative as a dopant in hole transport layer of an organic light emitting device

A perylene diimide (PDI) derivative was used as a dopant in the hole transport layer (HTL) of an organic light emitting device. The HTL examined was poly (N-vinylcarbazole) (PVK) and the PDI used was N,N′-di-dodecylperylene-3,4,9,10-bis-(dicarboximide), (N-DODEPER). The structure of the device was ITO/PEDOT:PSS (70 nm)/PVK:N-DODEPER(0, 0.2, 0.4, 0.8 wt.%) (65 nm)/Alq₃ (35 nm)/LiF (1.3 nm)/Al (100 nm). 0.8 wt.% N-DODEPER presence exhibited a luminous efficiency of 7.87 cd/A and an external quantum efficiency of 0.78% at 21 mA/cm² and a power efficiency of 3l m/W at 12 mA/cm². The luminous and power efficiency values were significantly enhanced by a factor of 15 with respect to that of undoped device.     

Electrical and optical characterization of SiOxNy and SiO2 dielectric layers and rear surface passivation by using SiO2/SiOxNy stack layers with screen printed local Al-BSF for c-Si solar cells

In c-Si solar cells, surface recombination velocity increases as the wafer thickness decreases due to an increase in surface to volume ratio. For high efficiency, in addition to low surface recombination velocity at the rear side, a high internal reflection from the rear surface is also required. The SiO_xN_y film with low absorbance can act as rear surface reflector. In this study, industrially feasible SiO₂/SiO_xN_y stack for rear surface passivation and screen printed local aluminium back surface field were used in the cell structure. A 3 nm thick oxide layer has resulted in low fixed oxide charge density of 1.58 × 10¹¹ cm⁻² without parasitic shunting. The oxide layer capped with SiO_xN_y layer led to surface recombination velocity of 155 cm/s after firing. Using single layer (SiO₂) rear passivation, an efficiency of 18.13% has been obtained with V_oc of 625 mV, J_sc of 36.4 mA/cm² and fill factor of 78.7%. By using double layer (SiO₂/SiO_xN_y stack) passivation at the rear side, an efficiency of 18.59% has been achieved with V_oc of 632 mV, J_sc of 37.6 mA/cm², and fill factor of 78.3%. An improved cell performance was obtained with SiO₂/SiO_xN_y rear stack passivation and local BSF.     

Influence of P<Superscript>+</Superscript>-ZnTe back surface contact on photovoltaic performance of ZnTe based solar cells

In order to improve photovoltaic performance of solar cells based on ZnTe thin films two device structures have been proposed and its photovoltaic parameters have been numerically simulated using Solar Cell Capacitance Simulator software. The first one is the ZnO/CdS/ZnTe conventional structure and the second one is the ZnO/CdS/ZnTe/P⁺-ZnTe structure with a P⁺-ZnTe layer inserted at the back surface of ZnTe active layer to produce a back surface field effect which could reduce back carrier recombination and thus increase the photovoltaic conversion efficiency of cells. The effect of ZnO, CdS and ZnTe layer thicknesses and the P⁺-ZnTe added layer and its thickness have been optimized for producing maximum working parameters such as: open-circuit voltage V_oc, short-circuit current density J_sc, fill factor FF, photovoltaic conversion efficiency η. The solar cell with ZnTe/P⁺-ZnTe junction showed remarkably higher conversion efficiency over the conventional solar cell based on ZnTe layer and the conversion efficiency of the ZnO/CdS/ZnTe/P⁺-ZnTe solar cell was found to be dependent on ZnTe and P⁺-ZnTe layer thicknesses. The optimization of ZnTe, CdS and ZnTe layers and the inserting of P⁺-ZnTe back surface layer results in an enhancement of the energy conversion efficiency since its maximum has increased from 10% for ZnO, CdS and ZnTe layer thicknesses of 0.05, 0.08 and 2 µm, respectively to 13.37% when ZnO, CdS, ZnTe and P⁺-ZnTe layer thicknesses are closed to 0.03, 0.03, 0.5 and 0.1 µm, respectively. Furthermore, the highest calculated output parameters have been J_sc?=?9.35 mA/cm², V_oc?=?1.81 V, η?=?13.37% and FF?=?79.05% achieved with ZnO, CdS, ZnTe, and P⁺-ZnTe layer thicknesses about 0.03, 0.03, 0.5 and 0.1 µm, respectively. Finally, the spectral response in the long-wavelength region for ZnO/CdS/ZnTe solar cells has decreased at the increase of back surface recombination velocity. However, it has exhibited a red shift and showed no dependence of back surface recombination velocity for ZnO/CdS/ZnTe/P?+?-ZnTe solar cells.