Light‐induced degradation and regeneration of multicrystalline silicon Al‐BSF and PERC solar cells

Light‐induced degradation (LID) is a well‐known problem faced by p‐type Czochralski (Cz) monocrystalline silicon (mono‐Si) wafer solar cells. In mono‐Si material, the physical mechanism has been traced to the formation of recombination active boron‐oxygen (B–O) complexes, which can be permanently deactivated through a regeneration process. In recent years, LID has also been identified to be a significant problem for multicrystalline silicon (multi‐Si) wafer solar cells, but the exact physical mechanism is still unknown. In this work, we study the effect of LID in two different solar cell structures, aluminium back‐surface‐field (Al‐BSF) and aluminium local back‐surface‐field (Al‐LBSF or PERC (passivated emitter and rear cell)) multi‐Si solar cells. The large‐area (156 mm × 156 mm) multi‐Si solar cells are light soaked under constant 1‐sun illumination at elevated temperatures of 90 °C. Our study shows that, in general, PERC multi‐Si solar cells degrade faster and to a greater extent than Al‐BSF multi‐Si solar cells. The total degradation and regeneration can occur within ～320 hours for PERC cells and within ～200 hours for Al‐BSF cells, which is much faster than the timescales previously reported for PERC cells. An important finding of this work is that Al‐BSF solar cells can also achieve almost complete regeneration, which has not been reported before. The maximum degradation in Al‐BSF cells is shown to reduce from 2% (relative) to an average of 1.5% (relative) with heavier phosphorus diffusion.     

Microstructural identification of Cu in solar cells sensitive to light‐induced degradation

Light‐induced degradation (mc‐LID or LeTID) can lead to a severe efficiency loss in multi‐crystalline solar cells. The underlying mechanism clearly distinguishes from known mechanisms as B‐O‐LID and Fe‐B‐LID. Various defect models have been suggested for mc‐LID mainly based on metal impurities, including Cu which is known to cause light‐induced degradation. We investigate mc‐LID sensitive PERC cells that show an efficiency degradation of 15%_rel. The weaker degradation of the grain boundaries (GBs) typical for mc‐LID is identified and further investigated from front and rear side with respect to recombination activities. The combination of local electrical measurements (LBIC), target preparation (REM, FIB) and element analysis (EDX, TEM) unveil Cu‐containing precipitates at the rear side of the solar cells. They accumulate at grain boundaries and at the rear surface of the Si‐bulk material where the passivation stack is damaged. We conclude that Cu originates from the cell material and discuss its relation to mc‐LID.

LBIC mapping (EQE at fixed wavelength) of a degraded mc‐Si PERC cell from front and rear side results in qualitatively different appearance of GBs.     

Enthalpy determination of order in poly(vinyl chloride)

Enthalpy measurements by means of solution microcalorimetry were obtained on a PVC resin in the temperature range 37-110°C. Enthalpy measurements above T_g detect a heat of fusion of about 1.5 cal/g of polymer and thereby demonstrate the presence of a soluble ordered structure in PVC. Enthalpy measurements on samples quenched and slow-cooled from within the temperature interval 37-220°C confirm the value of 1.5 cal/g for the heat of fusion as well as demonstrate a broad melting range of 130-200°C.     

Fourier transform infrared spectroscopy to detect thermal degradation of vegetable and chrome-tanned leather

Abstract

The present experimental study determined the thermal degradation stages for vegetable and chrome-tanned leathers (goat and sheep) at 90, 100, and 130?°C by using Fourier transform infrared spectroscopy (FTIR) and differential thermal analysis. Infrared spectra revealed that a temperature of 90?°C affected the adsorbed water band at 3400?cm^?1. Moreover, this temperature slightly reduced the vibrations of amide II and amid III (1340?cm^?1) confirming the preliminary decomposition of protein folds, but it is worth noting that the aliphatic side chains remained stable at this stage of aging. At 100?°C, there was a sharp rupturing in the phenolic-OH bond and side-by-side N–H vibrations decreased dramatically. The peak decomposition occurred at 130?°C, where the amide I and amide III intensities significantly increased, which can be considered indicative of protein unfolding. Those changes are substantiation of protein denaturation. Thermal analysis demonstrated that thermal aging significantly reduced the required temperature for the process of oxidation. The oxidation occurred at 217?°C in goat sample aged at 90?°C. Nevertheless, the reference sample suffered from oxidation at about 220?°C, while with increasing aging temperatures (at 100 and 130?°C), endothermic reactions were observed. Such reactions are usually associated with protein denaturation.     

Influence of various degradation conditions on the properties of gas-generating soils in the process of their decontamination

The properties of gas-generating soils (GGS) in the process of biofermentation under anaerobic and aerobic conditions are studied. The degradation of organic matter (OM) in a soil under natural occurrence conditions (without free access of air oxygen) at temperatures from 10 to 12°C is demonstrated to proceed at a specific reaction rate of k = 0.096 year^?1. The main phase of gas generation (biogas formation) is shown to take 15 years, with the content of methane in the biogas being 60?80 vol %. It has been established that, under the conditions of forced aeration of the GGS array, the specific reaction rate of OM degradation increases 10-fold, to 0.9673 year^?1, with a nearly complete decomposition of OM taking 1.5?2.0 years. A prerequisite for achieving of the predicted result is the maintenance of the environment humidity at a level not lower than 50%. Application of an alternative method, a thermal treatment of GGS increases the degree of OM decomposition to 59% within 4 h at 200°C and to 75% within 2 h at 300°C. In this case, residual organic substances are carbonized in the course of thermal treatment, transforming into a material resistant to microbiological decomposition. In fact, after heating at 200?300°C, GGS becomes inert from the gas-geochemical point of view.     

Direct detection of carrier traps in Si solar cells after light‐induced degradation

In solar cells fabricated from boron‐doped Cz‐Si wafers minority and majority carrier traps were detected by deep level transient spectroscopy (DLTS) after so‐called “light‐induced degradation” (LID). The DLTS signals were detected from mesa‐diodes with the full structure of the solar cells preserved. Preliminary results indicate metastable traps with energy levels positioned at E_V + 0.37 eV and E_C – 0.41 eV and apparent carrier capture cross‐sections in the 10^–17–10^–18 cm² range. The concentration of the traps was in the range of 10¹²–10¹³ cm^–3. The traps were eliminated by annealing of the mesa‐diodes at 200 °C. No traps were detected in Ga‐doped solar cells after the LID procedure or below the light protected bus bar locations in B‐doped cells. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Characterization of nanostructured ceramics prepared by both high energy ball milling and fast firing sintering processes

High-energy ball milling technique was successfully applied to calcinated lead zirconate titanate (PZT 60/40) powders. After 20?h of ball milling, large PZT particles were completely broken down, reducing its initial size in three orders of magnitude. Experimental results show a huge sinterability enhancement of the PZT powders by using this technique, achieving its maximum sintering rate at ～800°C. Relatively low densities (～91%) were achieved in stoichiometric samples, while in 3% lead excess samples sintered at 950°C for 30, 45, 60, 90 and 120?min using a fast firing process and a post-annealing treatment at 800°C for 4 h, densities of ～97% of the theoretical were achieved. PZT nanostructured ceramics prepared under optimized processing conditions (60?h of powder milling, 950°C of sintering temperature, 60?min of sintering time and a post-annealing process at 800°C during 4?h) show high dielectric constant (ε′) values (900) and low dielectric loss (tan?δ) at room temperature and a ferroelectric-paraelectric transition temperature at 375°C.     

Degradation Studies of Polycaprolactone in Banana Fibers Reinforced Thermoplastics Composites

In this paper we report the fabrication, properties and degradation studies of banana fibers–reinforced thermoplastic polymers. In order to impart hydrophobicity to the fibers and also to concomitantly increase interfacial bond strength, which is a critical factor for obtaining better mechanical properties of composites, banana fibers were treated with sodium hydroxide (5% and 10% for 4 h), sebacoyl chloride (SC) (0.5 g, 4 h), or toluene diisocyanate (TDl) (1.5 mL, 4 h). Mechanical properties of banana fibers treated with TDl were not affected to any significant extent, but there was an increase in tensile strength of fibers treated with sodium hydroxide (NaOH). Deterioration in mechanical properties was observed upon SC treatment. In thermograssimetre analogue (TGA) studies fibers showed initial mass loss (6.5%–9.5%) in the 50–150°C temperature region. Major weight loss occurred above 200°C. Scanning electron microscope (SEM) studies revealed an increase in surface roughness after alkali treatment. High density polyethylene (HDPE) modified by blending with poly (ε‐caprolactone) (80:20 w/w) was used as a thermoplastic matrix. Composites were fabricated by using 1 cm long banana fibers; the weight fraction of fibers was varied from 0.05–0.13. An increase in weight fraction of fibers resulted in an increase in tensile strength and modulus and decrease in elongation at break. Thin sheets and dumbbells were used for enzymatic and chemical hydrolysis degradation tests. The degradation of the material was monitored by weight change and loss of mechanical properties. The enzymatic degradation in (PCL) presence of Pseudomonas cepacia lipase (PCL) gave appreciable weight loss in PCL and blended materials.     

Acceleration and mitigation of carrier‐induced degradation in p‐type multi‐crystalline silicon

Recently, a new carrier‐induced defect has been reported in multi‐crystalline silicon (mc‐Si), and has been shown to be particularly detrimental to the performance of passivated emitter and rear contact (PERC) cells. Under normal conditions, this defect can take years to fully form. This Letter reports on the accelerated formation and subsequent passivation of this carrier‐induced defect through the use of high illumination intensity and elevated temperatures resulting in passivation within minutes. The process was tested on industrial mc‐Si PERC solar cells, where degradation after a 100 hour stability test was suppressed to only 0.1% absolute compared to 2.1% for non‐treated cells. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials

Low-density materials, commercially available hydrogensilsesquioxane （HSQ） offer a low dielectric constant. HSQ films can be obtained by spin on deposition （SOD）. In this work, low-dielectric-constant HSQ films are prepared by using D5 （decamethylcyclopentasiloxane） as sacrificiaJ porous materials. The dielectric constant of silica films significantly changes from 3.0 to 2.4. We report the structural aspects of the films in relation to their composition after annealed at 300℃, 400℃, and 500℃ for 1.5h in nitrogen ambient and annealed at 400℃ for 1.5h in vacuum. Si-OH appears after annealed at 400℃ for 1.5h in vacuum. The results indicate that the proper condition is in nitrogen ambient. Intensity of the Sill peak increases with the increasing temperature. Fourier transform infrared spectroscopy is used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds. Dielectric constant k is significantly lowered by annealing at 350℃ for 1.5h in nitrogen ambient. The I-V and C-V measurements are used to determine the dielectric constant, the electric resistivity and the breakdown electric field.     

A Stable and Compact Optical Module for Fiber-Optic Gyroscope Application

Abstract

This article introduces a new design for a bi-directional optical sub-assembly for fiber-optic gyroscope applications that integrates a super-luminescent light-emitting diode, a photodiode, a beam splitter, an isolator, a fiber receptacle, and a thermal electric cooler. It is less than 1.5 cm in diameter and 2.5 cm in height. As chip temperature was kept at 30°C under environment temperature of ?35°C, 25°C, and 75°C, the bi-directional optical sub-assembly reached stability at a center wavelength of 1,539 nm and a wavelength shift of 1.5 nm. A 3D simple model with the finite-element method was used to analyze thermal performance.     

Effect of sintering temperature and dwell time on electrocaloric properties of Ba0.85Ca0.075Sr0.075Ti0.90Zr0.10O3 ceramics

In this work, lead-free Ba_0.85Ca_0.075Sr_0.075Ti_0.90Zr_0.10O₃ (BCSZT) ceramics were fabricated by conventional solid-state reaction route. The effect of sintering temperature on electrocaloric properties of BCSZT ceramics was studied in detail. Samples were sintered at different temperatures (1400–1500?°C) and dwell time (3–6 h). An enhanced electrocaloric behavior is demonstrated for BCSTZ ceramics at 1475?°C/4 h. Electrocaloric cooling of ~1.5 ± 0.1 K was found for BCSZT sample. This cooling was found in wide temperature range of 303–363 K. Further, the selected composition was observed to be among the better performing materials reported for electrocaloric refrigeration.     

Development of conductive transparent indium tin oxide (ITO) thin films deposited by direct current (DC) magnetron sputtering for photon-STM applications

Highly conductive and transparent indium tin oxide (ITO) thin films, each with a thickness of 100 nm, were deposited on glass and Si(100) by direct current (DC) magnetron sputtering under an argon (Ar) atmosphere using an ITO target composed of 95% indium oxide and 5% tin oxide for photon-STM use. X-ray diffraction, STM observations, resistivity and transmission measurements were carried out to study the formation of the films at substrate temperatures between 40 and 400 °C and the effects of thermal annealing in air between 200 and 400 °C for between1 and 5 h. The film properties were highly dependent on deposition conditions and on post-deposition film treatment. The films deposited under an Ar atmosphere pressure of ∼1.7×10^-3 Torr by DC power sputtering (100 W) at substrate temperatures between 40 and 400 °C exhibited resistivities in the range 3.0–5.7×10^-5 Ω m and transmissions in the range 71–79%. After deposition and annealing in air at 300 °C for 1 h, the films showed resistivities in the range 2.9–4.0×10^-5 Ω m and transmissions in the range 78–81%. Resistivity and transmission measurements showed that in order to improve conductive and transparent properties, 2 h annealing in air at 300 °C was necessary. X-ray diffraction data supported the experimental measurements of resistivity and transmission on the studies of annealing time. The surface roughness and film uniformity improve with increasing substrate temperature. STM observations found the ITO films deposited at a substrate temperature of 325 °C, and up to 400 °C, had domains with crystalline structures. After deposition and annealing in air at 300 °C for 1 h the films still exhibited similar domains. However, after deposition at substrate temperatures from 40 °C to 300 °C, and annealing in air at 300 °C for 1 h, the films were shown to be amorphous. More importantly, the STM studies found that the ITO film surfaces were most likely to break after deposition at a substrate temperature of 325 °C and annealing in air at 300 °C for 2 or 3 h. Such findings give some inspiration to us in interpreting the effects of annealing on the improvement of conductive and transparent properties and on the transition of phases. In addition, correlations between the conductive/transparent properties and the phase transition, the annealing time and the phase transition, and the conductive/transparent properties and the annealing time have been investigated. Received: 10 July 2000 / Accepted: 27 October 2000 / Published online: 9 February 2001     

Experimental Investigations on Latent Heat Storage Unit using Paraffin Wax as Phase Change Material

Thermal performance of a latent heat storage unit is evaluated experimentally. The latent heat thermal energy storage system analyzed in this work is a shell-and-tube type of heat exchanger using paraffin wax (melting point between 58°C and 60°C) as the phase change material. The temperature distribution in the phase change material is measured with time. The influence of mass flow rate and inlet temperature of the heat transfer fluid on heat fraction is examined for both the melting and solidification processes. The mass flow rate of heat transfer fluid (water) is varied in the range of 0.0167 kg/s to 0.0833 kg/s (1 kg/min to 5 kg/min), and the fluid inlet temperature is varied between 75°C and 85°C. The experimental results indicate that the total melting time of the phase change material increases as the mass flow rate and inlet temperature of heat transfer fluid decrease. The fluid inlet temperature influences the heat fraction considerably as compared to the mass flow rate of heat transfer fluid during the melting process of the phase change material.     

Gettering of implanted Au in MeV?C implanted Si

The gettering behavior of 1 MeV?C implantation induced defects for Au (1.5 MeV, 2.2×10¹⁵ cm^-2), implanted into FZ Si(111), has been investigated using Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy. The gettering efficiency of the C implanted layer has been studied as a function of C dose, annealing temperature and time. For a C dose of 2×10¹⁶ cm^-2, a 2 h anneal at 950 °C has been found to result in a gettering efficiency going beyond ?90%. Thermal stability of the gettered Au in the C implanted layer has subsequently been investigated over a temperature range of 950–1150 °C using isochronal annealing. The gettered amount has been found to be stable up to 1050 °C beyond which there is a release. We have observed nanovoids in the C implanted layer surrounded by ?-SiC precipitates along with patches of a-SiC. Up to about 1050 °C, these nanovoids act as efficient gettering centers beyond which they seem to release the trapped Au. Four distinct regimes in annealing temperature with different mechanisms for Au gettering have been observed.     

Study of Temperature and UV Wavelength Range Effects on Degradation of Photo-Irradiated Polyethylene Films Using DMA

Plastic bags mostly made of polyethylene (PE) cause pollution as solid waste due to their non-degradability nature. Initiation of a degradative process by enhanced photo-oxidation is a possible method for an accelerated degradation. This paper presents temperature treatment effects on PE films where photodegradation was initiated using ultraviolet (UV) irradiation in the ranges of 200–300 nm and 300–400 nm for 2 hr. Effects of temperature of 40°C and 55°C on non-UV-irradiated and UV-irradiated PE films processed by conventional methods were investigated and evaluated after 50 hr, 150 hr, and 350 hr of temperature exposure. The effects of UV wavelength range irradiation on the degradation were deduced. Measuring the dynamic moduli using a dynamic mechanical analyzer monitored the degradation. The decrease in average storage modulus was 62% with treatment at 55°C, higher than the 16% drop at 40°C for unirradiated samples after 350-hr exposure. Cross-linking in UV-exposed samples, characterized by an increase in dynamic modulus (stiffening), was observed followed by a reduction of storage modulus. Temperature treatment at 55°C together with 300–400-nm UV range irradiation resulted in the largest increase, i.e., 22% after 150 hr, followed by the largest reduction of storage modulus, i.e., 74.6% for a cumulative 350-hr exposure.     

Use of chlorinated carbon and silicon precursors for epitaxial growth of 4H‐SiC at very high growth rates

A possibility to apply the advantages of chlorinated carbon precursors, which had been previously used in low‐temperature epitaxial growth of 4H‐SiC, to achieve very high growth rates at higher growth temperatures was investigated. Silicon tetrachloride was used as the silicon precursor to suppress gas‐phase homogeneous nucleation. The temperature increase from 1300 °C (which is the temperature of the previously reported low‐temperature halo‐carbon epitaxial growth) to 1600 °C enabled an increase of the precursor flow rates and consequently of the growth rate from 5 to more than 100 μm/h without morphology degradation. High quality of the epilayers was confirmed by low‐temperature photoluminescence spectroscopy and time‐resolved luminescence. No evidences of homogeneous nucleation were detected, however, liquid Si droplet formation on the epilayer surface seems to remain a bottleneck at very high growth rate. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effects of gas temperature on optical and transport properties of a-Si:H films deposited by PECVD

Effects of silane temperature (T _g) before glow-discharge on the optical and transport properties of hydrogenated amorphous silicon (a-Si:H) thin films were investigated. The optical measurements show that the refractive index increases with increasing T _g. The transport characterizations show that when T _g increases, the dark conductivity increases. However, the temperature coefficient of resistance decreases. In addition, after holding at 130°C for 20 h, the resistance variation, ΔR/R, of the films deposited at T _g = room temperature (10.8%) is much larger than those deposited at silane temperatures of 80°C (3%) and 160°C (2%). This can be attributed to different rates of defect creation in a-Si:H films caused by various T _g.     

Influence of processing parameters on nanomaterials synthesis efficiency by a carbothermal reduction process

In this work, the influence of synthesis parameters on the synthesis efficiency of tin oxide nanomaterials was studied by using the carbothermal reduction method in a sealed tube furnace. The parameters were the starting material, temperature and time of synthesis as well as the gas flux. The starting material was tin dioxide mixed with carbon black in a molar proportion of 1.5:1 and 1:1. The temperature range was from 950 to 1,125 °C with a step of 25 °C, and the synthesis times used were 15, 30, 45, 60, 75, 90, and 120 min. Using optimum values of the above parameters, the gas flux was changed to verify its influence. After completion of the syntheses, we found a grayish-black material inside the tube which was characterized by X-ray diffraction and scanning electron microscopy. The results showed that the collected material is composed of nanobelts (with width around 60 nm) and disks that grew preferentially in the SnO phase. A model based on the oxide vapor pressure was proposed to evaluate the efficiency of the process, and the results showed good agreement between experimental data and the proposed model. Based on the results obtained, the best conditions to obtain a homogeneous material with 95% efficiency is using a starting material in the molar proportion Sn:C of 1.5:1, a temperature of 1,132 °C for 75 min, and a N₂ gas flux of 80 sccm.     

Enhanced long-term stability of bismuth oxide-based electrolytes for operation at 500 °C

Cubic-stabilized ((DyO_1.5) _x –(WO₃) _y –(BiO_1.5)_{1 − x − y} ) electrolytes (DWSB) with much higher conductivity than (ErO_1.5)_0.2(BiO_1.5)_0.8, 20ESB, were developed through a double-doping strategy. (DyO_1.5)_0.08–(WO₃)_0.04–(BiO_1.5)_0.88, 8D4WSB, is the highest conductivity composition but underwent the greatest conductivity degradation at 500 °C due to its low total dopant concentration. The effect of dopant composition on conductivity behavior with time at 500 °C demonstrates that there is a trade-off between initial conductivity and long-term stability at this temperature. Therefore, it is necessary to find an optimal total and relative concentration of dopants to provide the enhanced long-term stability needed to make this DWSB electrolyte system feasible for 500 °C operation. To this end, it was found that (DyO_1.5)_0.25–(WO₃)_0.05–(BiO_1.5)_0.70, 25D5WSB, maintained a conductivity of 0.0068 S/cm without appreciable degradation after annealing at 500 °C for 500 h. Moreover, since bismuth oxide-based electrolytes do not exhibit any grain boundary impedance, the total conductivity of 25D5WSB is significantly higher than that of alternate electrolytes (e.g., GDC: Gd_0.1Ce_0.9O_1.95) at this temperature.