An optical emission spectroscopy study of the plasma generated in the DC HF CVD nucleation of diamond

Optical emission spectroscopy (OES) was used to study the plasma generated by the activation of the gas phase CH₄ + H₂ both by hot filaments and by a plasma discharge (DC HF CVD) during the nucleation of CVD diamond. The effects of nucleation parameters, such as methane concentration and extraction potential, on the plasma chemistry near the surface were investigated. The density of the diamond nucleation and the quality of the diamond films were studied by scanning electron microscopy (SEM) and Raman scattering, respectively. The OES results showed that the methane concentration influenced strongly the intensity ratio of H_β-H_α implying an increase of electron mean energy, as well as CH, CH⁺, C₂. A correlation between the relative increase of CH⁺ and the diamond nucleation density was found, conversely the increase of C₂ contributed to the introduction of defects in the diamond nuclei.     

氮气氛下(100)织构金刚石薄膜的成核与生长研究

利用热丝化学气相沉积法研究了氮气浓度对金刚石薄膜成核和生长的影响.实验发现氮气的 加入对金刚石成核密度影响不大,但促进了已形成的金刚石核的长大.适量的氮气不仅使金 刚石生长速率得到很大的提高,而且稳定了金刚石薄膜(100)面的生长,使金刚石薄膜具有 更好的(100)织构.利用原位光发射谱对衬底附近的化学基团进行了研究.研究表明,氮气的 引入使得金刚石生长的气相化学和表面化学性质发生了很大变化.含氮基团的萃取作用提高 了金刚石表面氢原子的脱附速率,从而提高了金刚石膜的生长速率.而含氮基团的选择吸附 使金刚石 关键词： 氮气 金刚石薄膜 织构 原位光发射谱     

紫外激光和压力共同作用下C60-peapod的聚合相变研究

采用气相扩散方法将C₆₀分子填充到单壁碳纳米管(SWNTs)中，制备出高填充比率的豆荚形纳米材料C₆₀@SWNT，又称为peapod.用金刚石对顶砧(DAC)装置获得高压，在高压下同时利用紫外激光处理样品，通过激光和压力的共同作用研究了C₆₀分子在碳管内的聚合相变.在21.5GPa高压下，同时紫外激光(325nm)照射30min后，拉曼光谱表明C₆₀分子在碳管内发生了聚合，形成一维链状O相聚合结构，且该相变是不可逆的. 关键词： 60 peapod')" href="#">C₆₀ peapod 紫外激光 高压 拉曼光谱     

ELECTRICAL PROPERTIES, EQUATIONS OF STATE AND PHASE TRANSITION IN SOLID C60 AT HIGH PRESSURE

Electrical properties and equations of state in solid C₆₀ at room temperature and high pressure have been studied in a diamond anvil cell using capacitance and resistance measurements and a piston-cylinder type device using P-V measurements, respectively. Experimental results by capacitance and P-V measurements indicate that solid C₆₀ also undergoes a phase transition at room temperature and a lower pressure, about 2GPa. The phase transition may be from a face-centered-cubic to a simple-cubic structure.     

GROWTH MODEL OF TEXTURED DIAMOND (111) FILM IN CH4/O2/H2 ATMOSPHERE

Partially oriented and highly textured diamond films on Si( 111 ) substrates were achieved by hot-filament chemical vapor deposition(HFCVD). High nucleation density greater than 5×10⁸cm^-2 was realiged in 3 min by near-surface glow discharge. The os-grown films were characterized by scanning electron microscopy(SEM), X-ray diffraction(XRD) and Raman spectroscopy. It was found that by adding a small amount of oxygen to the mixture of CH₄/H₂, the appearance of facet(111) was well controlled, and the secondary nucleation on the facet(111) was suppressed greatly. Growth feature of homoepitaxy on diamond (111) surface was demonstrated to be in Stranski-Krastanov model by SEM.     

金刚石膜与Si衬底间过渡层的结构稳定性

用热丝化学汽相沉积(HFCVD)技术在si(111)和si(100)衬底上获得了高质量的金刚石膜。并随着生长时间的增加,利用X射线光电子能谱(XPS)和俄歇电子能谱(AES)研究了过渡层中碳硅化合物组分的变化及其作用。同时提出渐变过渡层:Si/Si_1-xC_x/SiC/Si_yC_1-y/金刚石模型。当组分参量x与y在0.1—0.25之间取值时,用Keating方法给出了系统的稳定结构。 关键词：     

Simulations of C60 bombardment of Si, SiC, diamond and graphite

Molecular dynamics simulations of the 20-keV C₆₀ bombardment at normal incidence of Si, SiC, diamond and graphite targets were performed. The unique feature of these targets is that strong covalent bonds can be formed between carbon atoms from the C₆₀ projectile and atoms in the solid material. The mesoscale energy deposition footprint (MEDF) model is used to gain physical insight into how the sputtering yields depend on the substrate characteristics. A large proportion of the carbon atoms from the C₆₀ projectile are implanted into the lattice structure of the target. The sputtering yield from SiC is ∼twice that from either diamond or Si and this can be explained by both the region of the energized cylindrical tract created by the impact and the number density. On graphite, the yield of sputtered atoms is negligible because the open lattice allows the cluster to deposit its energy deep within the solid. The simulations suggest that build up of carbon with a graphite-like structure would reduce any sputtering from a solid with C₆₀⁺ bombardment.     

Yb2.75C60价带光电子能谱

用角积分紫外光电子能谱技术测量了Yb_2.75C₆₀薄膜的价带电子态密度分布.相纯Yb_2.75C₆₀样品通过C1s芯态x射线电子谱峰的位移表征.结果表明Yb_2.75C₆₀是半导体，在费米能级处几乎没有电子态分布.Yb 6s电子态和C₆₀LUMO能带的杂化效应不可忽略，有部分Yb 6s电子分布在Yb-C₆₀杂化能带上. 关键词： 2.75C₆₀')" href="#">Yb_2.75C₆₀ 电子能谱 电子态密度     

Studying the effect of hydrogen on diamond growth by adding C10H10Fe under high pressures and high temperatures

In this paper, hydrogen-doped industrial diamonds and gem diamonds were synthesized in the Fe–Ni–C system with C₁₀H₁₀Fe additive, high pressures and high temperatures range of 5.2–6.2?GPa and 1250–1460°C. Experimental results indicate similar effect of hydrogen on these two types of diamonds: with the increasing content of C₁₀H₁₀Fe added in diamond growth environment, temperature is a crucial factor that sensitively affects the hydrogen-doped diamond crystallization. The temperature region for high-quality diamond growth becomes higher and the morphology of diamond crystal changes from cube-octahedral to octahedral. The defects on the {100} surfaces of diamond are more than those on the {111} surfaces. Fourier transform infrared spectroscopy (FTIR) results indicate that the hydrogen atoms enter into the diamond crystal lattice from {100} faces more easily. Most interestingly, under low temperature, nitrogen atoms can also easily enter into the diamond crystal lattice from {100} faces cooperated with hydrogen atoms.     

Effects of hydrogen and oxygen on the electrochemical corrosion and wear-corrosion behavior of diamond films deposited by hot filament chemical vapor deposition

A diamond film was deposited on silicon substrate using hot filament chemical vapor deposition (HFCVD), and H₂ and O₂ gases were added to the deposition process for comparison. This work evaluates how adding H₂ and O₂ affects the corrosion and wear-corrosion resistance characteristics of diamond films deposited on silicon substrate. The type of atomic bonding, structure, and surface morphologies of various diamond films were analyzed by Raman spectrometry, X-ray diffraction (XRD) and atomic force microscopy (AFM). Additionally, the mechanical characteristics of diamond films were studied using a precision nano-indentation test instrument. The corrosion and wear-corrosion resistance of diamond films were studied in 1 M H₂SO₄ + 1 M NaCl solution by electrochemical polarization. The experimental results show that the diamond film with added H₂ had a denser surface and a more obvious diamond phase with sp³ bonding than the as-deposited HFCVD diamond film, effectively increasing the hardness, improving the surface structure and thereby improving corrosion and wear-corrosion resistance properties. However, the diamond film with added O₂ had more sp² and fewer sp³ bonds than the as-deposited HFCVD diamond film, corresponding to reduced corrosion and wear-corrosion resistance.     

内掺氮富勒烯N_2@C_(60)的几何结构和电子性质的密度泛函计算研究

采用密度泛函理论中的广义梯度近似对内掺氮富勒烯N2@C60的几何结构和电子性质进行计算研究.发现在N2@C60中,氮倾向以分子形式存在于C60中心处.键长分析、能级图、态密度图和电荷分析表明内掺氮分子对C60几何结构和电子结构带来的影响甚微.     

Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces

The diamond nucleation has been studied on scratched Si(100) both by surface analyses (XPS, AES, ELS) and microstructural probes (AFM, SEM). Two pathways for diamond formation and growth are detected: A seeding pathway occurs by direct growth from part of diamond seeds left by the mechanical pretreatment. Not all of these seeds however are prone to diamond growth as they can be either dissolved or carburized. A nucleation pathway occurs through a stepwise process including the formation of extrinsic (pretreatment) or intrinsic (in situ) nucleation sites, followed by formation of carbon-based precursors. It is believed that nucleation sites could be either grooves of scratching lines or protrusions produced by etching-redeposition. The size of these protrusions is not larger than 100 nm. On top of these protrusions as well as on the bare substrate, a thin layer of silicon carbide rapidly forms and DLC carbon likely. This complex process on top of protrusions may constitute carbon-based embryos for further diamond nucleation. Received 21 December 1998     

Optical and structural properties of polycrystalline CVD diamond films grown on fused silica optical fibres pre-treated by high-power sonication seeding

In this paper, the growth of polycrystalline chemical vapour deposition (CVD) diamond thin films on fused silica optical fibres has been investigated. The research results show that the effective substrate seeding process can lower defect nucleation, and it simultaneously increases surface encapsulation. However, the growth process on glass requires high seeding density. The effects of suspension type and ultrasonic power were the specific objects of investigation. In order to increase the diamond density, glass substrates were seeded using a high-power sonication process. The highest applied power of sonotrode reached 72 W during the performed experiments. The two, most common diamond seeding suspensions were used, i.e. detonation nanodiamond dispersed in (a) dimethyl sulfoxide and (b) deionised water. The CVD diamond nucleation and growth processes were performed using microwave plasma assisted chemical vapour deposition system. Next, the seeding efficiency was determined and compared using the numerical analysis of scanning electron microscopy images. The molecular composition of nucleated diamond was examined with micro-Raman spectroscopy. The sp³/sp² band ratio was calculated using Raman spectra deconvolution method. Thickness, roughness, and optical properties of the nanodiamond films in UV–vis wavelength range were investigated by means of spectroscopic ellipsometry. It has been demonstrated that the high-power sonication process can improve the seeding efficiency on glass substrates. However, it can also cause significant erosion defects at the fibre surface. We believe that the proposed growth method can be effectively applied to manufacture the novel optical fibre sensors. Due to high chemical and mechanical resistance of CVD diamond films, deposition of such films on the sensors is highly desirable. This method enables omitting the deposition of an additional adhesion interlayer at the glass–nanocrystalline interface, and thus potentially increases transmittance of the optical system.     

Effects of N2 addition on nanocrystalline diamond films by HFCVD in Ar/CH4 gas mixture

Nanocrystalline diamond (NCD) films were grown on silicon substrates by hot filament chemical vapor deposition in Ar/N₂/CH₄ gas mixtures. The effects of seeding process prior to deposition, the total gas pressure, and concentration of nitrogen on the grain size, morphology and bonding nature in HFCVD technique were investigated. The results indicated that a low total gas pressure is favorable for nanosized diamond crystallites. Films micrograph obtained from scanning electron microscopy showed diamond nanograins elongated with the addition of nitrogen in the plasma. Crystal structure investigations were carried out by X-ray diffraction measurements for deposited films. An increase in the size of crystallite is also observed from XRD measurements in NCD film when nitrogen was added in plasma. From Raman spectra, it was observed that the relative intensity of G peak increases indicating more graphite content after nitrogen added in the plasma. The effects of the nitrogen incorporation in nanocrystalline films in HFCVD are discussed.     

Sm富勒烯的芯态光电子能谱

用X射线光电子能谱研究了Sm掺杂的固态C₆₀相衍变和芯电子态.在Sm_xC₆₀中Sm的含量x小于0.5时，样品是固溶相；在x=0.5和x=2.75之间的掺杂阶段，样品是这两个相的混合.在x=2.75和x=6之间的高掺杂阶段未观察到相分离的X射线光电子能谱证据.Sm 4f, 4d的实验数据表明Sm的价态是+2.二价Sm 3d_5/2芯态谱线存在两个子峰. 关键词： 60的Sm填隙化合物')" href="#">C₆₀的Sm填隙化合物 相结构 电子态 X射线光电子能谱     

BCC枝晶生长原子堆垛过程的晶体相场研究

通过在自由能泛函中引入各向异性参数得到了一个基于高斯内核的改进晶体相场模型, 并采用该模型研究了体心立方结构(BCC)枝晶生长的原子堆垛过程. 结果表明, 在BCC由正十二面体平衡形貌演化为枝晶组织过程中, 形核位置经历了由面心({110}面)到尖端(<100>取向)的转移, 进而发生界面失稳形成枝晶组织; 枝晶生长过程中, 新的固相原子首先在枝晶尖端附近形核, 并快速向尖端及根部生长, 枝晶尖端被新原子完全包覆后将再次诱发液相原子附着形核及生长; 随初始液相密度的增加, 固-液界面移动速率增加, 速率系数的各向异性也增强.     

Rb掺杂C60单晶的相衍变和电子态

在C₆₀单晶超高真空解理面上制备C₆₀的Rb填隙化合物薄膜.用同步辐射光电子能谱研究了相衍变过程.观察到对应于固溶相、Rb₁C₆₀和Rb₃C₆₀的电子态密度分布.当数纳米厚Rb₃C₆₀薄膜在C₆₀单晶（111）解理面形成后，室温条件下进一步沉积Rb至样品表面不产生fcc到bct或bcc结构相变.C_{60 关键词： 4}C₆₀和Rb₅C₆₀吸附相')" href="#">金属性Rb₄C₆₀和Rb₅C₆₀吸附相 60单晶')" href="#">C₆₀单晶 相衍变 同步辐射光电子能谱     

Synthesis of industrial diamonds using FeNi alloy powder as catalyst

Synthesis of diamond single crystals in Fe80Ni20 C system was carried out in a cubic anvil high-pressure and high-temperature apparatus. This paper reports that the surface morphology and inclusion distribution of the grown diamonds had been observed. It finds that the inclusions in cubic and octahedral diamonds radiated along certain crystal orientation, while the inclusion distribution in cubo-octahedral diamond seemed independent of crystal orientation. By using scanning electron microscope, the surface morphology of the three shapes of diamonds was observed. The results of Mossbauer spectrum indicated that there were iron-inclusions FeaC and Fe-Ni alloy in the diamonds. According to the Fe-C phase diagram, FeaC should have formed during the quenching process. Nickel might have an inhibitory effect on the formation of Fe3C.     

金刚石薄膜的结构特征对薄膜附着性能的影响

在不同实验条件下，用微波等离子体化学气相沉积设备在硬质合金(WC+6%Co)衬底上沉积了 具有不同结构特征的金刚石薄膜.用Raman谱表征薄膜的品质和应力，用压痕实验表征薄膜的 附着性能，考察了薄膜中sp²杂化碳含量、形核密度、薄膜厚度对薄膜附着性能 的影响.结 果表明：sp²杂化碳的缓冲作用使薄膜中sp²杂化碳的含量对薄膜中 残余应力有较大的影 响，从而使薄膜压痕开裂直径统计性地随sp²杂化碳含量的增加而减小；仅仅依 靠超声遗 留的金刚石晶籽提高形核密度并不能有效改变薄膜与硬质合金基体之间的化学结合状况，从 而不能有效提高薄膜在衬底上的附着性能；在薄膜较薄时，晶粒之间没有压应力的存在，开 裂直径并不明显随厚度增加而增加，只有当薄膜厚度增加到一定值，晶粒之间才有较强压应 力存在，开裂直径随厚度的增加而较为迅速地增加. 关键词： 金刚石薄膜 附着性能 2杂化碳')" href="#">sp²杂化碳 成核密度 薄膜厚度     

The high pressure synthesis of the graphitic form of C3N4

Abstract

Basing on “ab-initio” calculations, C₃N₄ was claimed to be an ultra-hard material with a bulk-modulus close to that of diamond. Five different structural varieties were announced: the graphitic form, the zinc blende structure, the α and β forms of Si₃N₄ and another form, isostructural with the high pressure variety of Zn₂Si0₄.

Using the same strategy as that developed for diamond or c-BN synthesis, it appears that the graphitic form could be an appropriate precursor for preparing the 3D varieties. Two main problems characterize the C₃N₄ synthesis: (-) the temperature should be reduced in order to prevent nitrogen loss, (-) the reactivity of the precursors should be improved.

Consequently, we have developed a new process using the solvothermal decomposition of organic precursors containing carbon and nitrogen in the presence of a nitriding solvent. The resulting material, with a composition close to C₃N₄, has been characterized by different physico-chemical techniques.