高临界温度超导体在低温下的正常态性质

高临界温度超导体在低温下的正常态性质在超导转变温度以上，超导体处于正常态，这时电荷载流子运动伴随损耗，像通常正常金属那样存在一定的电阻．铜氧化合物高临界温度超导体（以下简称高温超导体）的正常态是二维性质的，载流子在铜氧平面内移动容易，而在二个铜氧面之...     

褐煤腐植酸中微量金属元素的赋存状态

以褐煤为原料,采用碱溶酸析法提取腐植酸,光栅摄谱法定性确定含有金属元素钙、铝、铜和钛.采用逐级提取分离法将腐植酸中金属元素分为：可交换态、碳酸盐结合态、氧化物结合态、有机物结合态、残渣态;采用ICP-AES定量测定腐植酸中微量金属元素的赋存状态.结果表明：残渣态铜占99.13％;有机物结合态铝占74.84％、残渣态铝占21.05％;有机物结合态钛占9.04％、残渣态钛占80.18％;可交换态钙占14.14％、有机物结合态钙占11.82％、残渣态钙占68.27％.所以,腐植酸中的铜主要是以残渣态存在,钛和铝主要是以有机物结合态和残渣态存在,钙主要是以可交换态、有机物结合态和残渣态存在.可交换态和氧化物结合态中的金属离子主要是钙、次之是铝;有机物结合态中的金属离子主要是钙、次之是铝和铜;有机物结合态中的金属离子主要是铝、次之是钙.     

鸡血藤中7种金属元素的形态分析

对鸡血藤中铁、锰、铜、锌、钙、镁和锶7种金属元素的化学形态进行分析;分别用0.45μm微孔滤膜、LSA-10大孔吸附树脂、正辛醇-水萃取体系,将鸡血藤中各元素分离为可溶态与悬浮态、有机态与无机态、醇溶态与水溶态,用电感耦合等离子体-原子发射光谱法(ICP-AES)测定7种元素的各形态含量。结果表明:鸡血藤中7种元素在原药中的含量高低依次为:钙、镁、铁、锰、锶、铜和锌,水煎液中锌和镁的提取率大于50%,其次是铜为45.2%;铜的颗粒吸附率最高为26.3%;镁的KOW参数在肠、胃液酸度下均大于1,铁和锰的KOW参数均小于1,元素的KOW值受pH影响。     

铜氧化物高温超导体中的电子有序态

铜氧化物高温超导现象自30年前被发现以来,对现代凝聚态物理的发展产生了极其重要的影响,然而其微观机制至今依然是一个谜。近年来,多种实验手段的研究结果发现,在铜氧化物高温超导体中电子除了形成库珀对,还可能形成多种其他新奇的有序态,例如自旋有序态、电荷有序态以及库珀对密度波等。这些有序态的起源及其与赝能隙态和超导态的关联对于理解高温超导机理可能具有重要的意义。文章将主要从实验的角度对铜氧化物超导体中的电子有序态做一个概述。     

中药土鳖虫中4种微量元素的形态分析研究

按照传统煎煮法对中药土鳖虫中铜、锌、铁、镁4种元素进行提取;用微孔滤膜分离提取液中的可溶态与悬浮态;利用大孔吸附树脂柱对可溶态中的有机态与无机态进行分离;采用火焰原子吸收光谱法对各种形态中的4种元素进行测定。结果显示,土鳖虫中4种元素的总提取率在45.04%—63.20%之间,浸留比在98.56%—245.1%之间,悬浮态颗粒吸附率在10%左右,铜、锌、铁、镁的有机态与无机态的比例在171.8%—487.1%之间。     

ZnS晶体内蓝色自激活和绿色铜发射的施主-受主性质

ZnS内存在绿色铜发射和蓝色自激活(S-A)发射是人们熟知的。通常认为:铜的绿色发射是由于施主和铜的受主态之间的复合跃迁,而在S-A发射的情况下,     

绞股蓝水煎液中微量元素铁、铜、锰、锌形态分析的研究

本文结合绞股蓝的药用功效，对其水煎液中具有生物活性的微量元素铁、铜、锰、锌的形态分析进行了研究。分别用０．４５μｍ滤膜、４０合树脂、ＡｍｂｅｒｌｉｔｅＸＡＤ－２大孔吸咐树脂，将绞股蓝水煎液中铁、铜、锰、锌分为悬浮态和可溶态、稳定态和不稳定态、有机态和无机态等重要形态，建立了上述四个元素的六种形态分离分析方法、用ＡＥＳ法测定其在各级分中的含量，各分量和与总量基本相符。样品的加标回收率为９０．０～１１０％，相对标准偏差均在８．４％以下。结果表明，绞股蓝水煎液中铁、铜、锰、锌是各以某种形态为主的多种形态共处的混杂体系。     

苯并三氮唑对变压器绕组硫腐蚀抑制机理的分子模拟研究

硫腐蚀现象对变压器绝缘性能的破坏不容忽视,其中腐蚀性硫化物与铜绕组作用产生的硫化亚铜是导致绝缘性能降低的一个重要原因.在变压器内部无氧和有氧的情况下,硫化亚铜的生成主要是因为腐蚀性硫化物与铜或者与氧化亚铜发生了一系列反应.为深入研究铜缓蚀剂苯并三氮唑(BTA)对铜绕组的缓蚀机理,采用分子模拟技术分析了BTA分子与铜晶体的电荷密度分布和态密度分布;同时利用过渡态搜索、红外光谱研究了BTA分子与氧化亚铜的反应过程.结果表明:加入BTA分子前后的铜表面态密度分布发生了变化,并且利用电荷密度分布图说明BTA分子与铜晶体形成了配位键;同时分析了BTA与氧化亚铜反应前后红外光谱的差异,发现BTA分子的结构已发生改变,与氧化亚铜形成了共价键.以上模拟结果说明BTA分子对铜和氧化亚铜有保护作用,能够抑制腐蚀性硫化物对铜绕组的腐蚀.     

苯并三氮唑对变压器绕组硫腐蚀抑制机理的分子模拟研究

硫腐蚀现象对变压器绝缘性能的破坏不容忽视,其中腐蚀性硫化物与铜绕组作用产生的硫化亚铜是导致绝缘性能降低的一个重要原因.在变压器内部无氧和有氧的情况下,硫化亚铜的生成主要是因为腐蚀性硫化物与铜或者与氧化亚铜发生了一系列反应.为深入研究铜缓蚀剂苯并三氮唑(BTA)对铜绕组的缓蚀机理,采用分子模拟技术分析了BTA分子与铜晶体的电荷密度分布和态密度分布;同时利用过渡态搜索、红外光谱研究了BTA分子与氧化亚铜的反应过程.结果表明:加入BTA分子前后的铜表面态密度分布发生了变化,并且利用电荷密度分布图说明BTA分子与铜晶体形成了配位键;同时分析了BTA与氧化亚铜反应前后红外光谱的差异,发现BTA分子的结构已发生改变,与氧化亚铜形成了共价键.以上模拟结果说明BTA分子对铜和氧化亚铜有保护作用,能够抑制腐蚀性硫化物对铜绕组的腐蚀.     

苯并三氮唑对变压器绕组硫腐蚀抑制机理的分子模拟研究

硫腐蚀现象对变压器绝缘性能的破坏不容忽视,其中腐蚀性硫化物与铜绕组作用产生的硫化亚铜是导致绝缘性能降低的一个重要原因.在变压器内部无氧和有氧的情况下,硫化亚铜的生成主要是因为腐蚀性硫化物与铜或者与氧化亚铜发生了一系列反应.为深入研究铜缓蚀剂苯并三氮唑(BTA)对铜绕组的缓蚀机理,采用分子模拟技术分析了BTA分子与铜晶体的电荷密度分布和态密度分布;同时利用过渡态搜索、红外光谱研究了BTA分子与氧化亚铜的反应过程.结果表明:加入BTA分子前后的铜表面态密度分布发生了变化,并且利用电荷密度分布图说明BTA分子与铜晶体形成了配位键;同时分析了BTA与氧化亚铜反应前后红外光谱的差异,发现BTA分子的结构已发生改变,与氧化亚铜形成了共价键.以上模拟结果说明BTA分子对铜和氧化亚铜有保护作用,能够抑制腐蚀性硫化物对铜绕组的腐蚀.     

Two resonant magnetic modes in an overdoped high T(c) superconductor

A detailed inelastic neutron scattering study of the overdoped high temperature copper oxide superconductor Y(0.9)Ca(0.1)Ba(2)Cu(3)O(7) reveals two-distinct magnetic resonant modes in the superconducting state. The modes differ in their symmetry with respect to exchange between adjacent copper oxide layers. Counterparts of the mode with odd symmetry, but not the one with even symmetry, had been observed before at lower doping levels. The observation of the even mode resolves a long-standing puzzle, and the spectral weight ratio of both modes yields an estimate of the onset of particle-hole spin-flip excitations.     

Subthreshold photoemission from copper nanoclusters on the SiO2 surface

Subthreshold photoemission from copper nanoclusters formed on the SiO₂ surface has been observed under irradiation of the surface by photons in the 3.1–6.5-eV energy range. The average size of copper nanoclusters on the silicon oxide surface is 250–500 nm. Besides the conventional photoemission from the filled Shockley surface state (SS), strong photoemission has been recorded at incident photon energies of 0.5 eV below the work function of the copper surface. This emission is assumed to be generated in direct electron transitions from the SS state to the unfilled electron surface states formed by the Coulomb image potential, followed by escape from these states into vacuum.     

Fermion-Spin Approach to Study the Doping Dependence of Antiferromagnetism in the Copper Oxide Material

Within the fermion-spin theory, we study the ground-state properties of the copper oxide materials by considering quantum fluctuations of spinons in the random-phaseapproximation (RPA). The RPA ground-state at half-filling is the magnetized π-flux state with the energy E₀=-0.332J per bond and the staggered magnetization M = 0.327. Away from half-fiing this staggered magnetization vanishes around doping δ= 5% for the reasonable parameter t/J = 5, which is in very good agreement with the experiments on copper oxide materials. Our results indicate that both hole dopings and quantum fluctuations of spinons lead to a strong suppression of the antiferromagnetic long-range order.     

氧化铜纳米粒子的制备及其SERS特性

采用激光刻蚀法在水溶液中制备了氧化铜纳米粒子,刻蚀完成后将氧化铜胶体沉积在铝片上形成一层氧化铜岛膜.所得纳米粒子的紫外—可见吸收峰在280 nm处,表明所得为氧化铜.原子力显微镜观察表明所制得的纳米粒子具有椭圆状结构,长轴约为30～50 nm,厚度约为8 nm.扫描电镜图片显示氧化铜粒子沉积在铝基底后形成了大小在0.5...     

细圆管内纳米颗粒悬浮液强化对流换热的探讨

实验研究了细圆管内去离子水和氧化铜纳米颗粒悬浮液的对流换热特性。根据实验数据,得到纳米颗粒悬浮液相对于去离子水的对流换热强化特性。结果表明,氧化铜纳米颗粒的加入强化了去离子水的换热性能,其强化程度随Re的变化因管径而异,并且与流态有关。     

The electrical property dependence of disordered copper oxide on oxygen content

We have deposited disordered copper oxide films on glass substrates, with varying oxygen to copper ratios, by the reactive sputtering method. The variation in the ratio is enough to take the system from having disordered metallic like conduction at low oxygen content to hopping like behaviour at higher oxygen content. The hopping like behaviour is described by an unusual band structure, where Mott-variable range hopping is seen at lower temperatures and electron-electron variable range hopping at higher temperatures in some samples. The metallic region shows the expected effects of quantum corrections to the conductivity, with the often seen influence of spin-orbit scattering in copper. The transition between the hopping and metallic state is of the percolation type, where the conduction path between Cu islands is broken as the oxygen content increases.     

Optical characterization of thin thermal oxide films on copper by ellipsometry

A complete optical characterization in the visible region of thin copper oxide films has been performed by ellipsometry. Copper oxide films of various thicknesses were grown on thick copper films by low temperature thermal oxidation at 125 °C in air for different time intervals. The thickness and optical constants of the copper oxide films were determined in the visible region by ellipsometric measurements. It was found that a linear time law is valid for the oxide growth in air at 125 °C. The spectral behaviour of the optical constants and the value of the band gap in the oxide films determined by ellipsometry in this study are in agreement with the behaviour of those of Cu₂O, which have been obtained elsewhere through reflectance and transmittance methods. The band gap of copper oxide, determined from the spectral behaviour of the absorption coefficient was about 2 eV, which is the generally accepted value for Cu₂O. It was therefore concluded that the oxide composition of the surface film grown on copper is in the form of Cu₂O (cuprous oxide). It was also shown that the reflectance spectra of the copper oxide–copper structures exhibit behaviour expected from a single layer antireflection coating of Cu₂O on Cu. Received: 19 July 2001 / Accepted: 27 July 2001 / Published online: 17 October 2001     

Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells

Subablative exposure of tightly focused visible-range femtosecond laser pulses on a thin translucent nanocrystalline copper(I) oxide on a silica glass substrate results not only in its annealing (resolidification), but apparently also in reduction of copper ions to the metallic state via single-photon absorption and the following thermal decomposition (disproportioning). Partial or complete ablation of the film within the laser focal spot and also its subablative optically contrast modification through formation of colloidal nanoparticles or annealing (resolidification) make it possible to consider this material in the thin-film form as a novel optical platform for direct laser writing of vis-IR metasurfaces and thin-film sensing plasmonic and all-dielectric nanostructures.     

Dry air effects on the copper oxides sensitive layers formation for ethanol vapor detection

The copper oxide films have been deposited by thermal evaporation and annealed under ambient air and dry air respectively, at different temperatures. The structural characteristics of the films were investigated by X-ray diffraction. They showed the presences of two hydroxy-carbonate minerals of copper for annealing temperatures below 250 °C. Above this temperature the conductivity measurements during the annealing process, show a transition phase from metallic copper to copper oxides. The copper oxides sensitivity toward ethanol were performed using conductivity measurements at the working temperature of 200 °C. A decrease of conductivity was observed under ethanol vapor, showing the p-type semi-conducting characters of obtained copper oxide films. It was found that the sensing properties of copper oxide toward ethanol depend mainly on the annealing conditions. The best responses were obtained with copper layers annealed under dry air.