Fabrication and characterization of Fe-doped titania semiconductor electrodes with p-n homojunction devices

The nano-TiO₂ electrode with a p-n homojunction device was designed and fabricated by coating of the Fe³⁺-doped TiO₂ (p-type) film on top of the nano-TiO₂ (n-type) film. These films were prepared from synthesized sol-gel TiO₂ samples which were verified as anatase with nano-size particles. The semiconductor characteristics of the p-type and n-type films were demonstrated by current-voltage (I-V) measurements. Results show that the rectifying curves of undoped TiO₂ and Fe³⁺-doped TiO₂ sample films were observed from the I-V data illustration for both the n-type and p-type films. In addition, the shapes of the rectifying curves were influenced by the fabrication conditions of the sample films, such as the doping concentration of the metal ions, and thermal treatments. Moreover, the p-n homojunction films heating at different temperatures were produced and analyzed by the I-V measurements. From the I-V data analysis, the rectifying current of this p-n junction diode has a 10 mA order higher than the current of the n-type film. The p-n homojunction TiO₂ electrode demonstrated greater performance of electronic properties than the n-type TiO₂ electrode.     

Spin-polarized transport in a δ-doped magnetic-barrier nanostructure

We theoretically investigate the electron spin transport properties through a δ-doped magnetic-barrier nanostructure, which can be realized experimentally by depositing two identical ferromagnetic stripes with the opposite in-plane magnetization on the top of a semiconductor heterostructure in parallel configuration and by using atomic layer doping technique. The δ-doping dependent transmission, conductance and spin polarization are calculated exactly by analytically solving Schrödinger equation of the spin electron. It is found that the electronic spin-polarized behavior in this device can be manipulated by changing the weight and/or the position of the δ-doping. Therefore, such a device can be used as a controllable spin filter, which may be helpful for spintronics applications.     

Study and modeling of the transport mechanism in a semi insulating GaAs Schottky diode

The current through a metal–semiconductor junction is mainly due to the majority carriers. Three distinctly different mechanisms exist in a Schottky diode: diffusion of carriers from the semiconductor into the metal, thermionic emission–diffusion (TED) of carriers across the Schottky barrier and quantum–mechanical tunneling through the barrier. The insulating layer converts the MS device in an MIS device and has a strong influence on its current–voltage (I–V) and the parameters of a Schottky barrier from 3.7 to 15 eV. There are several possible reasons for the error that causes a deviation of the ideal behavior of Schottky diodes with and without an interfacial insulator layer. These include the particular distribution of interface states, the series resistance, bias voltage and temperature. The GaAs and its large concentration values of trap centers will participate in an increase of the process of thermionic electrons and holes, which will in turn the IV characteristic of the diode, and an overflow maximum value [NT = 3 × 10²⁰] is obtained. The I–V characteristics of Schottky diodes are in the hypothesis of a parabolic summit.     

Electrodeposition of BixSb2−xTey thermoelectric thin films from nitric acid and hydrochloric acid systems

The electrochemical behaviors of Bi^III, Te^IV and Sb^III single ions and their mixtures were investigated in nitric acid and hydrochloric acid system separately. Based on which, Bi_xSb_2−xTe_y thermoelectric films were prepared by potentiostatic electrodeposition from the solutions with different concentrations of Bi^III, Te^IV and Sb^III in the two acid systems. The morphologies, compositions, structures, Seebeck coefficients and resistivities of the deposited thin films were characterized and compared by ESEM (or FESEM), EDS, XRD, Seebeck coefficient measurement system and four-probe resistivity measuring device respectively. The results show that although Bi_xSb_2−xTe_y thermoelectric thin film which structure is consistent with the standard pattern of Bi_0.5Sb_1.5Te₃ can be gained in both of the two acid solutions by adjusting the deposition potential, their morphologies and thermoelectric properties have big differences in different acid solutions.     

Experimental and theoretical investigation of the pyroelectric effect of the p-n junction in a paraelectric non-polar semiconductor

We describe here the first comprehensive investigation of a pyroelectric response of a p-n junction in a non-polar paraelectric semiconductor. The pyroelectric effect is generated by the, temperature dependent, built-in electrical dipole moment. High quality PbTe p-n junctions have been prepared specifically for this experiment. The pyroelectric effect was excited by a continuous CO₂ laser beam, modulated by a mechanical chopper. The shape and amplitude of the periodic and single-pulse pyroelectric signals were studied as a function of temperature (10-130 K), reverse bias voltage (up to −500 mV) and chopping frequency (4-2000 Hz). The pyroelectric coefficient is ≈10⁻³ μC/cm²K in the temperature region 40-80 K. The developed theoretical model quantitatively describes all the experimental features of the observed pyroelectric effect. The time evolution of the temperature within the p-n junction was reconstructed.     

Silicon oxynitride thin films synthesised by the reactive gas pulsing process using rectangular pulses

Silicon oxynitride thin films were synthesised by the reactive gas pulsing process using an argon, oxygen and nitrogen gas mixture from a semiconductor Si target. Argon and nitrogen were introduced at a constant mass flow rate, whereas oxygen gas was periodically supplied using a rectangular pulsed flow rate. The O₂ injection time T_ON (or duty cycle α) was the only varied parameter. The influences of this parameter on the discharge behaviour, on the Si target voltage, and on the resulting chemical composition of the films were investigated. The temporal evolution of the total pressure exhibits exponential shape differing from the rectangular oxygen pulse shape, due to the response time of the gas flowmeter and to the progressive oxidation of the target and the chamber walls. During the T_ON time, the preferential adsorption of the introduced O₂ induces a decay in Si target voltage. Reversion to the nitrided mode is still possible as soon as the O₂ injection is stopped. The elemental analyses assessed by secondary neutral mass spectrometry (SNMS) showed that the O/N ratio within silicon oxynitride films linearly depends on the T_ON time. Increasing the duty cycle α over a certain value results in an oxidised steady state formation during the T_ON time. This formation was observed by real time measurements of the emission lines ratio I(O^*)/I(Ar^*) indicative of the O₂ partial pressure and confirmed by the time derivative of the target voltage. During the T_OFF time, the alternation with the nitrided mode becomes impossible, leading to the specific synthesis of stoichiometric SiO₂ films.     

Synthesis of Fe-doped NiO nanofibers using electrospinning method and their ferromagnetic properties

To make p-type diluted magnetic semiconductor (DMS), Ni_1−xFe_xO nanofibers with different Fe doping concentrations have been successfully synthesized by electrospinning method using polyvinyl alcohol (PVA) and Ni(CH₃COO)₂·4H₂O as starting materials. The nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, superconductivity quantum interference device (SQUID) and X-ray photoelectron spectroscopy (XPS) test. The results show that Fe doping has no influence on the diameter and surface morphology of NiO nanofibers, and the nanofibers are polycrystalline with NaCl structure. All Fe-doped samples show obvious ferromagnetic properties and the saturation magnetization is enhanced with increase of the doping concentration of Fe, which indicates that the doped Fe has been incorporated into the NiO host and results in room-temperature ferromagnetism in the Ni_1−xFe_xO nanofibers.     

Investigation of diode parameters using I-V and C-V characteristics of In/SiO2/p-Si (MIS) Schottky diodes

A study on interface states density distribution and characteristic parameters of the In/SiO₂/p-Si (MIS) capacitor has been made. The thickness of the SiO₂ film obtained from the measurement of the corrected capacitance in the strong accumulation region for MIS Schottky diodes was 220 Å. The diode parameters from the forward bias I-V characteristics such as ideality factor, series resistance and barrier heights were found to be 1.75, 106-112 Ω and 0.592 eV, respectively. The energy distribution of the interface state density D_it was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. The interface state density obtained using the I-V characteristics had an exponential growth, with bias towards the top of the valance band, from 9.44×10¹³ eV⁻¹ cm⁻² in 0.329-E_v eV to 1.11×10¹³ eV⁻¹ cm⁻² in 0.527-E_v eV at room temperature. Furthermore, the values of interface state density D_it obtained by the Hill-Coleman method from the C-V characteristics range from 52.9×10¹³ to 1.11×10¹³ eV⁻¹ cm⁻² at a frequency range of 30kHz-1 MHz. These values of D_it and R_s were responsible for the non-ideal behaviour of I-V and C-V characteristics.     

Optical characteristics of semiconductor saturable absorber mirrors investigated by the reflection Z-scan technique

Recently, the semiconductor saturable absorber mirror (SESAM) has become a key component of passive mode-locked solid-state lasers. Here we present a simple method based on the reflection Z-scan technique to measure the key optical parameters of SESAM such as saturation fluence and modulation depth. The experimental results demonstrate that our method is able to perform with a high accuracy of 10⁻⁴ and a dynamic range of over four orders of magnitude.     

High-resolution FTIR spectrum of the ν12 band of ethylene-d (C2H3D)

The infrared absorption spectrum of the ν₁₂ fundamental band of ethylene-d (C₂H₃D) has been recorded with an unapodized resolution of 0.004 cm⁻¹ in the wavenumber range of 1340-1460 cm⁻¹ using the Fourier transform technique. By assigning and fitting a total of 870 infrared transitions using a Watson’s A-reduced Hamiltonian in the I^r representation, three rotational and five quartic centrifugal distortion constants for the upper state (v₁₂ = 1) were determined for the first time. The rms deviation of the fit was 0.00044 cm⁻¹ which is close to the experimental precision of the absorption lines. The A-type ν₁₂ band centred at 1400.762811 ± 0.000041 cm⁻¹was found to be relatively free from local frequency perturbations. The inertial defect Δ₁₂ was found to be 0.20928 ±  0.00002 μŲ.     

Structural, optical and electrical properties of Zn1−xCdxO thin films prepared by PLD

Ternary polycrystalline Zn_1−xCd_xO semiconductor films with cadmium content x ranging from 0 to 0.23 were obtained on quartz substrate by pulse laser deposited (PLD) technique. X-ray diffraction measurement revealed that all the films were single phase of wurtzite structure grown on c-axis orientation with its c-axis lattice constant increasing as the Cd content x increasing. Atomic force microscopy observation revealed that the grain size of Zn_1−xCd_xO films decreases continuously as the Cd content x increases. Both photoluminescence and optical measurements showed that the band gap decreases from 3.27 to 2.78 eV with increasing the Cd content x. The increase in Cd content x also leads to the broadening of the emission peak. The resistivity of Zn_1−xCd_xO films decreases evidently for higher values of Cd content x. The shift of PL emission to visible light as well as the decrease of resistivity makes the Zn_1−xCd_xO films potential candidate for optoelectronic device.     

Removal of lead(II) by adsorption onto Viscumalbum L.: Effect of temperature and equilibrium isotherm analyses

The removal efficiency of Viscumalbum L. from lead containing aqueous solutions was investigated. The effect of adsorbent mass, pH of solution, initial Pb(II) concentration and temperature was investigated using a batch adsorption technique. The optimum pH for Pb(II) adsorption was found as 3.0 for Viscumalbum L. Results were analyzed by the Langmuir, Freundlich, Temkin and Harkins-Jura, equation using linearized correlation coefficient at different temperature. The characteristic parameters for each isotherm have been determined. The Langmuir model agrees very well with experimental data than the other models. According to Langmuir isoterm, the monolayer saturation capacity (Q_o) is 769.23 mg/g at 25 °C. Models and the isotherm constant were evaluated depending on temperature. Thermodynamic parameters such as ΔH^o, ΔS^o and ΔG^o were calculated. The adsorption process was found to be endothermic and spontaneous. The experimental data were analyzed using the first- and the second-order kinetic models. The rate constants of adsorption for both kinetics models have been calculated. The second-order model provides the best correlation of the data.     

Theoretical study of optical and electronic properties of p-terphenyls containing cyano substituents as promising light-emitting materials

Recently, p-terphenyls containing alkoxylated backbones with or without CN groups on either the central phenyl ring or peripheral rings were synthesized and their photo-luminescent properties were studied. Herein, semi-empirical AM1 and density functional theory (DFT) B3LYP calculations with the 6-31G* basis set have been performed to optimize structure for the ground state and the semi-empirical ZINDO calculations have been used to determine the maximum absorption (λ_abs^max) and emission wavelengths (λ_emi) for 19 p-terphenyls. The steric effect is assigned to be responsible for the calculated λ_abs^max and λ_emi shifts and the CN group at the central phenyl with ortho-substitution and at peripheral phenyl rings with para-substitution can also significantly influence these spectra. According to experimental results, the p-terphenyls with CN groups may have a lower energy of LUMO, and thus, we investigated the influence of the substitution position and the number of CN groups on the p-terphenyl moiety. The calculated optical and electronic properties provide important information on the behavior of the corresponding Organic light-emitting diode device (OLED). The suggested theoretical calculation protocol can be employed to predict electro-luminescent characteristics of other materials, and further, to design novel materials for OLED.     

Cavity ring down absorption spectroscopy of the BΣ-XΣ transition of YO

The absorption spectrum of the (2, 0) and (2, 1) bands of the B²Σ⁺-X²Σ⁺ transition of YO between 442 and 478 nm were recorded using laser vaporization/reaction with free-jet expansion and cavity ring down laser absorption spectroscopy. Local rotational perturbations have been found for both spin components of the v = 2 level of the B²Σ⁺ state. The observed perturbations could be ascribed to a degenerate perturbing state interacting with the B²Σ⁺ state. Least-squares fit of the observed upper state term values yielded molecular constants for the v = 2 level of the B²Σ⁺ state and the perturbing ²Π state. Earlier ab initio calculations [J. Chem. Phys. 89 (1988) 2160] indicated that the C²Π state is nearby, it is plausible that the C²Π state is the perturbing state.     

Surface free energy of CrNx films deposited using closed field unbalanced magnetron sputtering

CrN_x thin films have attracted much attention for semiconductor IC packaging molding dies and forming tools due to their excellent hardness, thermal stability and non-sticking properties (low surface free energy). However, few data has been published on the surface free energy (SFE) of CrN_x films at temperatures in the range 20-170 °C. In this study CrN_x thin films with CrN, Cr(N), Cr₂N (and mixture of these phases) were prepared using closed field unbalanced magnetron sputtering at a wide range of Cr⁺² emission intensity. The contact angles of water, di-iodomethane and ethylene glycol on the coated surfaces were measured at temperatures in the range 20-170 °C using a Dataphysics OCA-20 contact angle analyzer. The surface free energy of the CrN_x films and their components (e.g., dispersion, polar) were calculated using the Owens-Wendt geometric mean approach. The influences of CrN_x film surface roughness and microstructure on the surface free energy were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. The experimental results showed that the lowest total SFE was obtained corresponding to CrN at temperature in 20 °C. This is lower than that of Cr(N), Cr₂N (and mixture of these phases). The total SFE, dispersive SFE and polar SFE of CrN_x films decreased with increasing surface temperature. The film roughness has an obvious effect on the SFE and there is tendency for the SFE to increase with increasing film surface roughness.     

Structural and Torsional Properties of o-Cresol and o-Cresol-OD as Obtained from Microwave Spectroscopy and ab Initio Calculations

The microwave spectra of o-cresol and of o-cresol-OD were assigned using molecular beam Fourier transform microwave (MB-FTMW) spectrometers in the frequency range of 3-40 GHz. Two conformers of o-cresol were measured where the hydroxy group is syn with respect to the methyl group in one case and anti in the other. The transitions of both conformers were split due to internal rotation of the methyl group. For syn-o-cresol we found the rotational constants A=3249.45242(18) MHz, B=2202.02546(18) MHz, C=1323.66277(16) MHz, and the barrier to internal rotation of the methyl group V₃=7.912(46) kJ mol⁻¹. In the case of anti-o-cresol A=3273.80084(18) MHz, B=2196.26747(18) MHz, C=1325.36424(22) MHz, and V₃=4.4256(14) kJ mol⁻¹ was obtained. Moreover we were able to determine the quartic centrifugal distortion constants, the angle between the internal rotor axes, and the inertial a axes, and, for the deuterated species, additionally the deuterium nuclear quadrupole coupling constants.     

Effect of CdS nanoparticles on fluorescence from Sm doped SiO2 glass

Sm³⁺ doped CdS nanoparticles have been prepared by sol-gel method. The effect of annealing temperatures and doping concentrations of CdS on the photoluminescence spectra of Sm³⁺ were studied. From the measurement of its optical absorption, three phenomenological Judd-Ofelt intensity parameters (Ω₂, Ω₄, and Ω₆) have been computed and used to parameterize the radiative properties. The influences of CdS on Sm³⁺ ions were studied by fluorescence spectroscopy. The fluorescence spectra revealed that the emission intensity of samarium increased considerably in the presence of CdS nanoparticles. The evaluation of radiative properties of Sm³⁺ containing CdS showed that the ⁴G_5/2→⁶H_7/2 transition in silica matrix had the potential to be a laser transition.     

High-resolution infrared analysis of the ν7 band of cis-ethylene-d2 (cis-C2H2D2)

The spectrum of the ν₇ band of cis-ethylene-d₂ (cis-C₂H₂D₂) has been recorded with an unapodized resolution of 0.0063 cm⁻¹ in the 740-950 cm⁻¹ region using a Bruker IFS 125 HR Fourier transform infrared spectrometer. By fitting 2186 infrared transitions of ν₇ with a standard deviation of 0.00060 cm⁻¹ using a Watson’s A-reduced Hamiltonian in the I^r representation, accurate rovibrational constants for ν₇ = 1 state have been derived. The band center of ν₇ has been found to be 842.20957 ± 0.00004 cm⁻¹. In a simultaneous fit of 1331 infrared ground state combination differences from the present ν₇ transitions, together with 22 microwave frequencies, ground state constants have been improved. The rms deviation of the ground state fit was 0.00027 cm⁻¹.     

Monitoring of pathogen carrying air-borne tea dust particles by light scattering

In order to investigate whether tea (Camellia sinensis (L.) Kuntze) dust particles could be a possible carrier of the pathogen contaminated Mycobacterium a biotechnical procedure was used, and to verify the possibility of monitoring this dust, a laser based light scattering setup was designed and fabricated. Experiments were carried out using the strain Mycobacterium smegmatis mc² 155 as a model organism to study the effect on tea dust particles. Light scattering investigations on both M. smegmatis contaminated and uncontaminated tea dust particle samples were carried out as a function of scattering angle at 543.5, 594.5 and 632.5 nm wavelengths. The results have shown that the behavior of tea dust samples both with and without Mycobacterium varies significantly for all the three different incident laser wavelengths.     

Feasibility of using limited-population-based average R10 for pharmacokinetic modeling of osteosarcoma dynamic contrast-enhanced magnetic resonance imaging data

Retrospective analyses of clinical dynamic contrast-enhanced (DCE) MRI studies may be limited by failure to measure the longitudinal relaxation rate constant (R₁) initially, which is necessary for quantitative analysis. In addition, errors in R₁ estimation in each individual experiment can cause inconsistent results in derivations of pharmacokinetic parameters, K^trans and v_e, by kinetic modeling of the DCE-MRI time course data. A total of 18 patients with lower extremity osteosarcomas underwent multislice DCE-MRI prior to surgery. For the individual R₁ measurement approach, the R₁ time course was obtained using the two-point R₁ determination method. For the average R₁₀ (precontrast R₁) approach, the R₁ time course was derived using the DCE-MRI pulse sequence signal intensity equation and the average R₁₀ value of this population. The whole tumor and histogram median K^trans (0.57±0.37 and 0.45±0.32 min⁻¹) and v_e (0.59±0.20 and 0.56±0.17) obtained with the individual R₁ measurement approach are not significantly different (paired t test) from those (K^trans: 0.61±0.46 and 0.44±0.33 min⁻¹; v_e: 0.61±0.19 and 0.55±0.14) obtained with the average R₁₀ approach. The results suggest that it is feasible, as well as practical, to use a limited-population-based average R₁₀ for pharmacokinetic modeling of osteosarcoma DCE-MRI data.