Reactivity of monolayer V2O5 films on TiO2(1 1 0) produced via the oxidation of vapor-deposited vanadium

The growth, and reactivity of monolayer V₂O₅ films supported on TiO₂(1 1 0) produced via the oxidation of vapor-deposited vanadium were studied using X-ray photoelectron spectroscopy and temperature programmed desorption (TPD). Oxidation of vapor-deposited vanadium in 10⁻⁷ Torr of O₂ at 600 K produced vanadia films that contained primarily V³⁺, while oxidation in 10⁻³ Torr at 400 K produced films that contained primarily V⁵⁺. The reactivity of the supported vanadia layers for the oxidation of methanol to formaldehyde was studied using TPD. The activity for this reaction was found to be a function of the oxidation state of the vanadium cations in the film.     

A simple statistical model for V2O5 catalysis

In this work we propose a model to describe the selective oxidation of hydrocarbons at the surface of the V₂O₅ catalyst. The main ingredients of the model are the concentration of vanadium active sites, the surface and bulk diffusion rates of oxygen vacancies and the probability rate of a hydrocarbon reaction. The reactions take place at the free V₂O₅ (0 1 0) surface, and the diffusion of vacancies occur along the [0 1 0] (bulk) and [0 0 1] (surface) directions. The coupling between V₂O₅ and a given metal oxide support determines the concentration of the active vanadium sites, where the reactions can occur. Only the oxygen atoms, which are coordinated to three vanadium sites, take part of the oxidation process. In our calculations we employed two different approaches, single site and pair approximations, and some Monte Carlo simulations. We have found the dependence of the critical concentration of vacancies on the diffusion rates, probability of reaction, and fraction of active vanadium sites, for the catalyst to operate in an active steady state.     

An XPS study on the surface reduction of V2O5(0 0 1) induced by Ar ion bombardment

The effect of the irradiation with Al Kα X-rays during an XPS measurement upon the surface vanadium oxidation state of a fresh in vacuum cleaved V₂O₅(0 0 1) crystal was examined. Afterwards, the surface reduction of the V₂O₅(0 0 1) surface under Ar⁺ bombardment was studied. The degree of reduction of the vanadium oxide was determined by means of a combined analysis of the O1s and V2p photoelectron lines. Asymmetric line shapes were needed to fit the V³⁺2p photolines, due to the metallic character of V₂O₃ at ambient temperature. Under Ar⁺ bombardment, the V₂O₅(0 0 1) crystal surface reduces rather fast towards the V₂O₃ stoichiometry, after which a much slower reduction of the vanadium oxide occurs.     

Scalable synthesis of Sb(III)Sb(V)O4 nanorods from Sb2O5 powder via solvothermal processing

Scalable Sb(III)Sb(V)O₄ nanorods from Sb₂O₅ powder were prepared using solvothermal route. XRD and HRTEM demonstrate that the nanorods are single-crystal orthorhombic-Sb₂O₄ phase with several micrometers long and 200-300 nm diameter size. XPS result further shows that the antimony cations in the nanorods are composed of three valence and five valence antimony ions. The emission of the nanorods appears around 450 nm wavelength. The formation mechanism of the Sb(III)Sb(V)O₄ nanorods was discussed in detail.     

Adsorption of ammonia on vanadium-antimony mixed oxides

We analyzed the adsorption of ammonia (NH₃) on the VSbO₄(1 1 0) catalyst surface using density functional theory (DFT) calculations. We followed the evolution of the chemical bonds between different atoms of the resulting NH₃/VSbO₄ system and the changes in the electronic structure of the catalyst. NH₃ preferential adsorption geometries were analyzed through the crystal orbital overlap population (COOP) concept and the density of states (DOS) curves. The VSbO₄(1 1 0) surface exhibits Lewis and Brønsted acid sites on which the ammonia molecule can interact. On the Lewis acid site, NH₃ adsorption resulted in the interaction between the N and a surface V-isolated cation. On Brønsted acid site, N interacted with a surface H coming from the chemical dissociation of water. The COOP analysis indicate that NH₃ interaction on the VSbO₄(1 1 0) surface is weak. In addition, the DOS curves show more developed electronic interactions for NH₃ adsorption on Lewis acid site than over Brønsted acid site.     

XPS and ab initio study of the interaction of PbTe with molecular oxygen

Density functional (B3LYP) calculations have been performed to investigate the adsorption of molecule on the surface of cluster (PbTe)₄. To study the influence of point defects (namely, impurity atoms and cation and anion vacancies) on the reactivity of PbTe surface, clusters (PbTe)₃GeTe, (PbTe)₃GaTe, (PbTe)₃Te, and (PbTe)₃(Pb) were investigated. The adsorption of oxygen on the surface of (PbS)₄ cluster was calculated to evaluate the role of anions in the adsorption process. It was shown that the formation of the peroxide-like complex is the first step of adsorption. The calculated tendency to surface oxidation increases in sequence: PbTe with cation vacancies <PbS < pure PbTe < PbTe doped with Ga < PbTe doped with Ge < PbTe with anion vacancies. The results of quantum-chemical calculations correlate with X-ray photoelectron spectroscopy data.     

The ESR study of single crystal spinel ZnCr2Se4 diluted with Sb and V

The single crystal of Sb³⁺ and V³⁺ doped zinc chromium selenide spinel ZnCr₂Se₄ were prepared by a chemical transport method and characterized by ESR spectroscopy in order to examine the effect of nonmagnetic antimony and magnetic vanadium on properties of the system. For antimony admixtures the Neel temperature is very similar to that of the parent spinel ZnCr₂Se₄ (22 K). However, upon incorporating vanadium ions, the T_N temperature decreases down to 17.5 K, determined for the maximum vanadium content (x=0.06). The temperature dependence of the ESR linewidth over paramagnetic region is interpreted by an occurrence of spin-phonon interaction. The strong broadening linewidth together with its strong temperature dependence for vanadium doped ZnCr₂Se₄ is explained by the complex paramagnetic relaxation model.     

Point defects and orientation-dependent transport of matter and charge in iron-containing olivines

The variation of the oxygen content, x_O, of synthetic fayalite (Fe₂SiO₄) single crystals was investigated thermogravimetrically at 1130 °C as a function of the oxygen activity, a_O2 (= P_O2/P_O2° ≈ f_O2/f_O2° with P_O2° ≈ f_O2° = 1 bar ≈ 1 atm). It was found that x_O varies less in fayalite single crystals than in polycrystalline Fe₂SiO₄ studied earlier. The majority defects are most likely cation vacancies, (V_Me²⁺)″, ferric ions on M-sites, (Fe³⁺_Me²⁺), and ferric ions on Si-sites, (Fe³⁺_Si⁴⁺)′. Furthermore, the diffusion of iron in synthetic olivine single crystals ((Fe_xMg_1 − x)₂SiO₄) was studied at 1130 °C as a function of orientation, oxygen activity, and cationic composition. The observed oxygen activity dependencies suggest that cations move via different types of cation vacancies, most likely isolated vacancies, (V_Fe²⁺)″, and possibly neutral associates, {2(Fe³⁺_Me²⁺) ⋅ (V_Me²⁺)^′ ? ′}^x, the latter being minority defects. In addition, the electrical conductivity, σ, of fayalite single crystals was investigated as a function of orientation and oxygen activity within the stability field of fayalite at 1130 °C. The observed oxygen activity dependencies are compatible with (V_Me²⁺)^′ ? ′, (Fe³⁺_Me²⁺), and (Fe³⁺_Si⁴⁺)′ being the majority point defects at high a_O2 and with h^⋅ and e′ as the majority defects at low a_O2. The electrical conduction in fayalite is governed by contributions of electrons and holes. This extended point defect model for fayalite is also compatible with data for the variation of the oxygen content and for the iron tracer diffusion.     

The adsorption of toluene on V-Sb oxides. Theoretical aspects

Toluene adsorption reactions on the (1 1 0) surface of VSbO₄ have been analyzed following the changes in the electronic structure of the hydrocarbon molecule and metal cation sites of the oxide using the Just Another Extended Hückel Molecular Orbital Program (JAEHMOP) code. The bonding character of these interactions has also been studied in the same theoretical framework. The calculations indicate that the exothermic hydrocarbon parallel interaction on Sb-V sites results in the weakening of one of the C-H bonds of the methyl fragment. This leads to a H-abstraction that involves the participation of a Sb-cation. Both methyl and phenyl fragments decrease their electronic population and so does the V-cation site. Most of these electrons are transferred to other V atoms in the bulk solid. As a result the LUMO of the toluene-oxide system fully populates. The analysis reveals that methyl-Sb bonding interactions mainly involve C_2px and H_1s orbitals with Sb_5s orbital, while non-bonding phenyl-V interactions involve C_2px orbitals with V_3dx²−y² orbital. This last interaction facilitates the desorption of the benzyl species after H-abstraction.     

Effects of vanadium doping on structure and electrical properties of SrBi4Ti4O15 thin films

The effects of vanadium(V) doping into SrBi₄Ti₄O₁₅ (SBTi) thin films on the structure, ferroelectric, leakage current, dielectric, and fatigue properties have been studied. X-ray diffraction result showed that the crystal structure of the SBTi thin films with and without vanadium is the same. Enhanced ferroelectricity was observed in the V-doped SrBi₄Ti₄O₁₅ (SrBi_4−x/3Ti_4−xV_xO₁₅, SBTiV-x (x = 0.03, 0.06, and 0.09)) thin films compared to the pure SrBi₄Ti₄O₁₅ thin film. The values of remnant polarization (2P_r) and coercive field (2E_c) of the SBTiV-0.09 thin film capacitor were 40.9 μC/cm² and 105.6 kV/cm at an applied electric field of 187.5 kV/cm, respectively. The 2P_r value is over five times larger than that of the pure SBTi thin film capacitor. At 100 kHz, the values of dielectric constant and dielectric loss were 449 and 0.04, and 214 and 0.06 for the SBTiV-0.09 and the pure SBTi thin film capacitors, respectively. The leakage current density of the SBTiV-0.09 thin film capacitor measured at 100 kV/cm was 6.8 × 10⁻⁹ A/cm², which is more than two and a half orders of magnitude lower than that of the pure SBTi thin film capacitor. Furthermore, the SBTiV-0.09 thin film exhibited good fatigue endurance up to 10¹⁰ switching cycles. The improved electrical properties may be related to the reduction of internal defects such as bismuth and oxygen vacancies with changes in the grain size by doping of vanadium into SBTi.     

Adsorption of V on a hematite (0 0 0 1) surface and its oxidation: Monolayer coverage

The adsorption of a monolayer of V on idealized Fe- and oxygen-terminated hematite (0 0 0 1) surfaces and subsequent oxidation under atomic O adsorption are studied by density functional theory. Theoretical results are compared with X-ray surface standing wave and X-ray photoelectron spectroscopic measurements, and interpreted in the light of data on sub-monolayer coverages. Near-surface Fe reduction under V adsorption and accompanying structural relaxation are examined. These effects and subsequent response to oxidation, are found to be highly site specific. A full monolayer of oxygen leads to a V⁵⁺ state and reoxidation of subsurface Fe to the trivalent state, seen in both theory and experiment.     

Fabrication of Sb-doped p-type ZnO thin films by pulsed laser deposition

p-Type ZnO thin films have been realized via monodoping antimony (Sb) acceptor by using pulsed laser deposition. The obtained films with the best electrical properties show a hole concentration in the order of 10¹⁸ cm⁻³ and resistivity in the range of 2-4 Ω cm. X-ray diffraction measurements revealed that all the films possessed a good crystallinity with (0 0 2)-preferred orientation. Guided by X-ray photoemission spectroscopy analysis and a model for large-sized-mismatched group-V dopant in ZnO, an Sb_Zn-2V_Zn complex is believed to be the most possible acceptor in the Sb-doped p-type ZnO thin films.     

Sensitisation of erbium emission by silicon nanocrystals-doped SnO2

SnO₂ thin films undoped and doped with antimony (Sb), erbium (Er) and Si nanocrystals (Si-nc) have been grown on silicon (Si) substrate using sol-gel method. Room-temperature photoluminescence (PL) measurement of undoped SnO₂, under excitation at 280 nm, shows only one broad emission at 395 nm, which is related to oxygen vacancies. The PL of Er³⁺ ions was found to be enhanced after doping SnO₂ with Sb and Si-nc. The excitation process of Er is studied and discussed. The calculation of cross-section suggests a sensitisation of Er PL by Si-nc.     

Conducting antimony-doped tin oxide films derived from stannous oxalate by aqueous sol-gel method

Nanocrystalline SnO₂:Sb films were prepared by a sol-gel route using C₆H₈O₇-triethanolamine (TEA) mixing aqueous solution with pH 6.5-7.0. Stannous oxalate and antimony trichloride were used as tin and antimony sources. IR, XRD FESEM, FETEM, UV-vis and four-point probe measurement were used to characterize sol-gel chemistry, structure, morphologies, optical and electrical properties. Mechanism of sol-gel reaction illuminated that existence of TEA supplied large numbers of active tin hydrate and ionized state carboxyl groups for tin and antimony chelation through the amido association with the ionized H⁺ on -COOH of H₃L and H₂C₂O₄. The 6 at.% Sb-doped films with film thickness of 600 nm had sheet resistance as low as 42.85 Ω/ when annealed at 450 °C for 10 min. Annealing temperature intensively altered sheet resistance and optimum was in the range of 450-500 °C. The longer annealing time caused Sb volatilization which led to the optimum doping level shifted from 6 to 12 at.%.     

The nature of antimony-enriched surface layer of Fe-Sb mixed oxides

Antimony segregation is a common feature in Fe-Sb mixed oxides, which have been widely applied as catalysts in selective oxidation and ammoxidation reactions. This paper attempts to shed a light on the cause of such a common feature and on the nature of the antimony-enriched surface layer over FeSbO₄ by means of XPS surface analysis. Single-phase FeSbO₄ samples prepared by different methods were studied, and the antimony in their surface layer is a mixture of both Sb⁵⁺ and Sb³⁺ rather than single Sb⁵⁺. Their surface composition is close to FeSb₂O₆, which could be described as (FeSbO₄)(Sb₂O₄)_δ, δ = 0.5, and it is not “Fe(II)Sb(V)₂O₆” as suggested in literature. Fe-Sb mixed oxides with Sb/Fe > 1 (mol/mol) are mixtures of FeSbO₄ and Sb₂O₄, and the surface of FeSbO₄ grains would be a layer of (FeSbO₄)(Sb₂O₄)_δ, δ ≥ 0.5. Fe-Sb mixed oxides with Sb/Fe < 1 are mixtures of FeSbO₄ and Fe₂O₃, and the surface of FeSbO₄ grains would be a layer of (FeSbO₄)(Sb₂O₄)_δ, δ ≤ 0.5, but the remaining Fe₂O₃ would be encapsulated by a layer of FeSbO₄.     

Theoretical study on adsorption of Au and hydrated Au cations on clean Si(1 1 1) surface

To model the adsorption of Au⁺ cation in aqueous solution on the semiconductor surface, the interactions of Au⁺ and hydrated Au⁺ cations with clean Si(1 1 1) surface were investigated by using hybrid density functional theory (B3LYP) and Møller-Plesset second-order perturbation (MP2) methods. Si(1 1 1) surface was described with Si₇H₁₁, Si₁₁H₁₇ and Si₂₂H₂₁ clusters. The effect of the basis set superposition error (BSSE) was taken into account by applying the counterpoise correction. The calculated results indicated that the binding energies between hydrated Au⁺ cations and clean Si(1 1 1) surface are large, suggesting a strong interaction between hydrated Au⁺ cations and the semiconductor surface. The bonding nature of the chemical adsorption of Au⁺ to Si surface can be classified as partial covalent as well as ionic bonding. As the number of water molecules increases, the water molecules form hydrogen bond network with one another and only one water molecule binds directly to the Au⁺ cation. The Au⁺ cation in aqueous solution will safely attach to the clean Si(1 1 1) surface.     

Growth and structure of vanadium oxide on anatase (1 0 1) terraces

The interaction of vanadium oxide with epitaxial anatase films exposing (1 0 1) terraces was characterized. The TiO₂ films were grown on vicinal LaAlO₃ (1 1 0) substrates by oxygen plasma-assisted molecular beam epitaxy (OPA-MBE); reflection high energy and low energy electron diffraction (RHEED and LEED) indicated that the films exposed (1 0 1) terraces of the anatase TiO₂ polymorph. When a vanadium oxide monolayer was deposited onto the anatase surface by OPA-MBE at 725 K, only (1 × 1) RHEED and LEED patterns were observed. The V X-ray photoelectron spectroscopy (XPS) peak intensities indicated that the monolayer wetted the anatase surface and so the diffraction patterns were attributed to an epitaxial vanadia layer. Analysis of the vanadium oxide monolayer by X-ray and ultraviolet photoelectron spectroscopies revealed that the V was predominantly 5+. When the vanadia coverage was increased at 725 K, Auger electron spectra showed only very slow attenuation of the anatase Ti peaks while spots began to develop in RHEED patterns recorded along the LaAlO₃ direction; both indicative of 3-D cluster formation. In the orthogonal direction, the RHEED patterns showed unusual diagonal streaks. Meanwhile, the (1 × 1) LEED pattern persisted even after 30 nm of vanadia was deposited. This was attributed to gaps between the 3-D clusters exposing the epitaxial monolayer. Core level XPS spectra of the 3-D clusters revealed a broad V 2p_3/2 peak that was centered at the position expected for V⁴⁺ but could be deconvoluted into three peaks corresponding to V³⁺, V⁴⁺, and V⁵⁺. It is shown that crystallographic shear that accommodates such variations in the oxygen content of V oxides can lead to the diagonal streaks in RHEED patterns recorded along the LaAlO₃ [0 0 1] direction even as the pattern in the orthogonal direction shows sharp transmission spots. The results show that vanadia growth on anatase (1 0 1) proceeds through the Stranski-Krastanov mode with a strong vanadia-titania interaction stabilizing a dispersed vanadia monolayer. The results are compared with previous data for vanadia growth on anatase (0 0 1) where smooth, epitaxial VO₂ films grow ad infinitum.     

Investigation of vanadium–sodium silicate glasses using XANES spectroscopy

X-ray absorption near edge structure spectroscopy has been used to investigate the electronic and atomic structure of (V₂O₅)_x(Na₂O)_0.30(SiO₂)_0.70−x (x < 0.1) glasses obtained by melt-quench technique. The results show no sign of metallic clustering of V atoms, but mixed oxidation states (+4 and +5) of V and strong V3d–O2p hybridization in the glasses. Detailed analysis has revealed that the glass samples contain about 15% V⁴⁺ and 85% V⁵⁺ and the ligand-field splitting is about 1.6 eV.     

Simultaneous observation of oxygen uptake curves and electronic states during room-temperature oxidation on Si(0 0 1) surfaces by real-time ultraviolet photoelectron spectroscopy

Ultraviolet photoelectron spectroscopy was used to measure the oxygen uptake, changes in work function due to the surface dipole layer of adsorbed-oxygen atoms, Δ?_SDL, and changes in band bending due to the defect-related midgap state, ΔBB, simultaneously during oxidation on Si(0 0 1) surface at room-temperature, RT, under an O₂ pressure of 1.3 × 10⁻⁵ Pa. The oxygen dosage dependence of Δ?_SDL revealed that dissociatively adsorbed-oxygen atoms occupy preferentially dimer backbond sites at the initial stage of Langmuir-type adsorption, which is associated with a rapid increase of ΔBB. When raising temperature to ∼600 °C, such preferential occupation of the dimer backbond sites by oxygen atoms is less significant and ΔBB becomes smaller in magnitude. The observed relation between Δ?_SDL and ΔBB indicates that point defects (emitted Si atoms + vacancies) are more frequently generated by oxygen atoms diffusing to the dimer backbond sites at lower temperature in RT −600 °C.     

Studies on the structural and electrical properties of spray deposited SnO2:Sb thin films as a function of substrate temperature

Thin films of antimony doped tin oxide (SnO₂:Sb) were prepared by spray pyrolysis technique using SnCl₂ as precursor with the various antimony doping levels ranging from 1 to 4 wt%. The XRD analysis showed that the undoped SnO₂ films grow in (211) preferred orientation whereas the Sb doped films grow in (200) plane. Scanning electron microscopy studies indicated that the surface of the films prepared with lower doping level (1 wt%) consists of larger grains whereas those prepared with higher doping levels (>1 wt%) consist of smaller grains. The sheet resistance has been found to be reduced considerably (2.17 Ω/□) for Sb doped films. To the best of our knowledge this is the lowest sheet resistance obtained for Sb doped SnO₂ thin films.