Surface XPS characterization of NiTi shape memory alloy after advanced oxidation processes in UV/H2O2 photocatalytic system

Surface structure of NiTi shape memory alloy (SMA) was modified by advanced oxidation processes (AOP) in an ultraviolet (UV)/H₂O₂ photocatalytic system, and then systematically characterized with x-ray photoelectron spectroscopy (XPS). It is found that the AOP in UV/H₂O₂ photocatalytic system leads to formation of titanium oxides film on NiTi substrate. Depth profiles of O, Ni and Ti show such a film possesses a graded interface structure to NiTi substrate and there is no intermediate Ni-rich layer like that produced in conventional high temperature oxidation. Except TiO₂ phase, some titanium suboxides (TiO, Ti₂O₃) may also exist in the titanium oxides film. Oxygen mainly presents in metal oxides and some chemisorbed water and OH⁻ are found in titanium oxides film. Ni nearly reaches zero on the upper surface and relatively depleted in the whole titanium oxides film. The work indicates the AOP in UV/H₂O₂ photocatalytic system is a promising way to favor the widespread application of biomedical NiTi SMA by improving its biocompatibility.     

The effect of polymer coatings on switching behavior and cycling durability of Pd/Mg-Ni thin films

Although Pd-capped Mg-Ni alloy switchable mirror thin films have potential applications in smart windows and optical switches, they degrade quickly and cannot be switched after about 150 cycles. This must be improved for practical use. In this study, we tested several polymer coatings on the surface of Pd/Mg₄Ni switchable mirror thin films as a protective membrane and evaluated the optical switching property and durability. The polymer membrane is able to suppress the oxidization of Mg because it has an excellent gas separation characteristic. Polymer coating extended the switching durability of samples to about 1000 cycles. In addition, the transmittance of the thin film in the transparent state is improved by the coating.     

Surface characterization and microstructure of ITO thin films at different annealing temperatures

In this study, the electron beam evaporation method is used to generate an indium tin oxide (ITO) thin film on a glass substrate at room temperature. The surface characteristics of this ITO thin film are then investigated by means of an AFM (atomic force microscopy) method. The influence of postgrowth thermal annealing on the microstructure and surface morphology of ITO thin films are also examined. The results demonstrate that the film annealed at higher annealing temperature (300 °C) has higher surface roughness, which is due to the aggregation of the native grains into larger clusters upon annealing. The fractal analysis reveals that the value of fractal dimension D_f falls within the range 2.16-2.20 depending upon the annealing temperatures and is calculated by the height-height correlation function.     

Influence of oxygen on the growth of carbon nanotubes by the SiC surface decomposition method

The influence of oxygen on the development of carbon nanotubes (CNTs) during the annealing process of the surface decomposition method on SiC(000−1) surfaces was investigated. In the case of annealing a SiC substrate under ultra-high vacuum conditions, carbon nanofibers (CNFs) form between the CNT layer and the substrate. However, CNTs form without CNFs by annealing the substrate in an oxygen atmosphere. The mean length of CNTs is longer than those formed without an oxygen atmosphere. From cross-sectional transmission electron microscopy images, it was found that oxygen plays an important role in CNT growth by the surface composition method.     

New design of nozzle structures and its effect on the surface and crystal qualities of thick GaN using a horizontal HVPE reactor

High-quality thick GaN films without cracks were achieved by using a new nozzle structure in the reactor grown by the hydride vapor phase epitaxy on sapphire substrates. Optical contrast microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray double diffraction (XRD) and cathodoluminescence (CL) were carried out to reveal the surface, crystal and optical properties of the GaN epilayer. It was found that the nozzle structure in the reactor has a large effect on the growth rate, surface flat, crystal quality, and the uniformity of the growth. Compared with the old one, the new nozzle structure (denoted as multi-layers nozzle) can improve dramatically the properties of thick GaN. Mirror, colorless and flat GaN thick film was obtained and its (0 0 0 2) FWHM results were reduced from 1000 to 300 arcsec when the new nozzle was used. AFM result revealed a step flow growth mode for GaN layer with the new nozzle. Room-temperature CL spectra on the GaN films showed a strong near-band-edge peak for the new nozzle, but there is only weak emitting peak for the old nozzle. New nozzle structure can improve the uniform of flow field near the surface of substrates compared with the old one, which leads to the improvement of properties of GaN thick film by hydride vapor phase epitaxy (HVPE).     

Effect of calcination temperature on the morphology and surface properties of TiO2 nanotube arrays

Well-ordered TiO₂ nanotube arrays were prepared by electrochemical anodization of titanium in aqueous electrolyte solution of H₃PO₄ + NH₄F at a constant voltage of 20 V for 3 h, followed by calcined at various temperatures. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and Photoluminescence (PL) were used to characterize the samples. The results showed that the as-prepared nanotube arrays before being calcined were amorphous and could transform to anatase phase at a heat treatment temperature higher than 400 °C. As the calcination temperatures increased, crystallization of anatase phase enhanced and rutile phase appeared at 600 °C. However, further increasing the calcination temperature would cause the collapse of nanotube arrays. PL intensity of the nanotube arrays annealed at 500 °C was the lowest, which was probably ascribed to better crystallization together with fewer surface defects of the nanotube arrays.     

Atypical grain growth for (2 1 1) CdTe films deposited on surface reconstructed (1 0 0) SrTiO3 substrates

The (1 0 0) SrTiO₃ substrate has emerged as the oxide substrate of choice for the deposition of a wide variety of materials. The substrate's unavoidable miscut leads to a step-terrace morphology when heated to high temperatures. This morphological transition is accompanied by an atomic scale repositioning of the uppermost terrace atoms, the nature of which is strongly dependent on the substrate temperature and ambient atmosphere used. Here, we report the deposition of CdTe films on the as-received and reconstructed surfaces of (1 0 0) SrTiO₃. The as-received substrate gives rise to a [1 1 1] CdTe film with four equally distributed in-plane grain orientations. The surface reconstruction, on the other hand, gives rise to an unprecedented reorientation of the film's grain structure. For this case, a [2 1 1] CdTe film emerges having twelve unevenly distributed in-plane orientations. We attribute the film's grain structure to an atomic scale surface reconstruction, with the anisotropic distribution of grain-types arising from a preferential formation due to the step edges.     

Structural and spectroscopic analysis of hot filament decomposed ethylene deposited at low temperature on silicon surface

The deposition of decomposed ethylene on silicon wafer at lower temperature using hot filament chemical vapor deposition (HFCVD) method was applied to compose thin film of carbon and its compounds with silicon and hydrocarbon structures. The films were analyzed using Raman spectroscopy, X-ray diffraction, and scanning electron microscopy with elemental microanalysis by energy dispersive X-ray spectrometer. The structure and morphology of the early stage of the film deposition was analyzed. The obtaining of SiC as well as diamond-like structure with this method and catalytic influence of chemical admixtures on the film structure and properties are discussed.     

Growth of pentacene on Ag(1 1 1) surface: A NEXAFS study

Thin films of pentacene (C₂₂H₁₄) have become widely used in the field of organic electronics. Here films of C₂₂H₁₄ of thickness ranging from submonolayer to multilayer were thermally deposited on Ag(1 1 1) surface. The determination of molecular geometry in pentacene films on Ag(1 1 1) studied by X-ray absorption at different stages of growth up to one monolayer is presented.XAS spectra at the C K-edge were collected as a function of the direction of the electric field at the surface. The different features of the spectra were assigned to resonances related to the various molecular unoccupied states by the comparison with the absorption coefficient of the pentacene gas phase. The transitions involving antibonding π states show a pronounced angular dependence for all the measured coverages, from submonolayer to multilayer. The spectra analysis indicates a nearly planar chemisorption of the first pentacene layer with a tilt angle of 10°.     

First-principles study of CoO films on MnO (1 1 1): Stability and interfacial structure

Based on the generalized gradient approximation, full potential linearized augmented plane-wave (FP-LAPW) calculations have been performed to study the stability and the interfacial structure of CoO/MnO (1 1 1). The surface energy, the strain energy and the binding energy are calculated and discussed. The calculations revealed that the CoO/MnO (1 1 1) is a stable interface structure. Also examined were the electronic properties and the atomic spin magnetic moments of the interface. It was found that the interface exhibited half-metallic property and the atomic magnetic moments were obviously weakened at the interface for metal atoms compared with the corresponding magnetic moments in bulk material.     

Photocatalytic oxidation of natural organic adsorbates on anatase TiO2 films observed by infrared adsorption spectroscopy with a multiple internal reflection geometry

Photocatalytic oxidation of organic adsorbates on anatase TiO₂ films has been examined in different atmospheres of humid air, dry air and vacuum. The photocatalytic oxidation was observed by IR absorption spectroscopy (IRAS) with a multiple-internal-reflection (MIR) geometry. The photocatalytic oxidation is the fastest in the air at a humidity of 70% where oxygen and water vapor are consuming to produce OH radicals and O₂⁻ anions on the TiO₂ surface with the UV exposure. In the dry air, a rate of the photocatalytic oxidation is almost 30% of that in the humid air, where only O₂⁻ anions oxidize the organic adsorbates. In vacuum, on the other hand, it is negligible, which suggests that adsorbed H₂O molecules do not play an important role in the photocatalytic reaction. It is suggested that an addition of the water vapor is necessary to achieve the higher catalytic activity.     

Surface morphology of metal films deposited on mica at various temperatures observed by atomic force microscopy

Thin films of eight metals with a thickness of 150 nm were deposited on mica substrates by thermal evaporation at various temperatures in a high vacuum. The surface morphology of the metal films was observed by atomic force microscopy (AFM) and the images were characterized quantitatively by a roughness analysis and a bearing analysis (surface height analysis). The films of Au, Ag, Cu, and Al with the high melting points were prepared at homologous temperatures T/T_m = 0.22-0.32, 0.40, and 0.56. The films of In, Sn, Bi, and Pb with the low melting points were prepared at T/T_m = 0.55-0.70, where T and T_m are the absolute temperatures of the mica substrate and the melting point of the metal, respectively. The surface morphology of these metal films was studied based on a structure zone model. The film surfaces of Au, Ag, and Cu prepared at the low temperatures (T/T_m = 0.22-0.24) consist of small round grains with diameters of 30-60 nm and heights of 2-7 nm. The surface heights of these metal films distribute randomly around the surface height at 0 nm and the morphology is caused by self-shadowing during the deposition. The grain size becomes large due to surface diffusion of adatoms and the film surfaces have individual characteristic morphology and roughnesses as T increases. The surface of the Al film becomes very smooth as T increases and the atomically smooth surface is obtained at T/T_m = 0.56-0.67 (250-350 °C). On the other hand, the atomically smooth surface of the Au film is obtained at T/T_m = 0.56 (473 ± 3 °C). The films of In, Sn, Bi, and Pb prepared at T/T_m = 0.55-0.70 also show the individual characteristic surface morphology.     

Characteristic of ceramic coatings on aluminum by plasma electrolytic oxidation in silicate and phosphate electrolyte

In the present work, four processes were carried out to produce ceramic coatings on aluminum substrate in two kinds of electrolytes (silicate and phosphate solution systems) using plasma electrolytic oxidation (PEO) technology. The voltage-time responses were recorded during different PEO processes. SEM/EDX and XRD were adopted to investigate the microstructure, elements distribution and phase composition of the coatings prepared in the two electrolyte systems. It is found that coatings produced in the silicate electrolyte have a more homogeneous morphology than those produced in the phosphate system. EDX analysis shows that silicon element tends to present primarily in the outer region of the coatings while phosphorus distributes uniformly throughout the coating thickness. According to the conventional anodic oxidation mechanism, a model is set up to explain the different characteristics of ceramic coatings fabricated in different electrolytes which is helpful to understand the growth mechanism of PEO coatings.     

Electrostatic spray deposited zinc oxide films for gas sensor applications

In this work, thin films of zinc oxide (ZnO) for gas-sensor applications were deposited on platinum coated alumina substrate, using electrostatic spray deposition (ESD) technique. As precursor solution zinc acetate in ethanol was used. Scanning electron microscopy (SEM) evaluation showed a porous and homogeneous film morphology and the energy dispersive X-ray analysis (EDX) confirmed the composition of the films with no presence of other impurities. The microstructure studied with X-ray diffraction (XRD) and Raman spectroscopy indicated that the ZnO oxide films are crystallized in a hexagonal wurtzite phase. The films showed good sensitivity to 1 ppm nitrogen dioxide (NO₂) at 300 °C while a much lower sensitivity to 12 ppm hydrogen sulphide (H₂S).     

Metal contacts to n-GaN

Al, Au, Ti/Al and Ti/Au contacts were prepared on n-GaN and annealed up to 900 °C. The structure, phase and morphology were studied by cross-sectional transmission and scanning electron microscopy as well as by X-ray diffraction (XRD), the electrical behaviour by current-voltage measurements. It was obtained that annealing resulted in interdiffusion, lateral diffusion along the surface, alloying and bowling up of the metal layers. The current-voltage characteristics of as-deposited Al and Ti/Al contacts were linear, while the Au and Ti/Au contacts exhibited rectifying behaviour. Except the Ti/Au contact which became linear, the contacts degraded during heat treatment at 900 °C. The surface of Au and Ti/Au contacts annealed at 900 °C have shown fractal-like structures revealed by scanning electron microscopy. Transmission electron microscopy and XRD investigations of the Ti/Au contact revealed that Au diffused into the n-GaN layer at 900 °C. X-ray diffraction examinations showed, that new Ti₂N, Au₂Ga and Ga₃Ti₂ interface phases formed in Ti/Au contact at 900 °C, new Ti₂N phase formed in Ti/Al contact at 700 and 900 °C, as well as new AlN interface phase developed in Ti/Al contact at 900 °C.     

Influence of direct current plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper films

Physical vapor processes using glow plasma discharge are widely employed in microelectronic industry. In particular magnetron sputtering is a major technique employed for the coating of thin films. This paper addresses the influence of direct current (DC) plasma magnetron sputtering parameters on the material characteristics of polycrystalline copper (Cu) thin films coated on silicon substrates. The influence of the sputtering parameters including DC plasma power and argon working gas pressure on the electrical and structural properties of the thin Cu films was investigated by means of surface profilometer, four-point probe and atomic force microscopy.     

In situ measurement of the surface stress evolution during magnetron sputter-deposition of Ag thin film

We measured the evolution of in situ surface stress of Ag thin film during the magnetron sputter deposition. The measurement of force per width of Ag thin film showed that both the surface state and surface stress of Ag layer can be controlled through the variation of the deposition conditions such as the deposition temperature and rate. At room temperature, the force per width curve of Ag film deposited to 1 Å/s showed a typical curve consisting of three stages of surface stress. A brief presence of initial compressive stage and broad tensile maximum resulting in a compressive state had a tendency to disappear with increasing the deposition temperature. Meanwhile, a development of final compressive stage was more at higher temperature. Similar effect was observed but less obvious on increasing the deposition rate.     

Difference between chemical structures of the interface at the Al-oxide tunneling barrier prepared by plasma or by radical oxidation

We have studied chemical structures of the interface between the Al-oxide tunneling barrier and the underlying Co₉₀Fe₁₀ layer in magnetic tunnel junctions when a 1-nm thick metallic Al barrier was oxidized by two different methods: plasma oxidation and radical oxidation. Our chemical analyses confirmed that the underlying CoFe layer was unavoidably attacked by oxygen during the oxidation and that this left different oxide states at the AlO_x/CoFe interface, depending on the oxidation method. The radical oxidation required long oxidation time for optimizing tunneling performance and resulted in a large amount of oxygen at the interface, which, in turn, resulted in the formation of mostly α-Fe₂O₃ and Al₂O₃. Conversely, the plasma oxidation required a relatively short oxidation time for optimization and left FeO as a dominant phase at the interface. Our results also show that the thermal treatment helped AlO_x, an oxygen-deficient phase, to be re-oxidized and transformed into Al₂O₃, the thermodynamically stable stoichiometric phase. The oxygen that diffused from the reduced CoFe layer into the barrier is likely responsible for this oxygen enrichment. We show that such differences in the chemical structure of the interface are critical clues to understanding what causes the change in tunneling properties of magnetic tunnel junctions.     

Mixing and magnetic properties of surface alloys: The role of the substrate

In this paper, we have performed ab initio density functional theory calculations to compare the miscibility and magnetic properties of two-dimensional binary surface alloys of the form M_xN_1−x (M = Fe or Co; N = Pt, Au, Ag, Cd or Pb) on two different substrates - Rh(1 1 1) and Ru(0 0 0 1). The trends in miscibility for the two substrates are found to be strikingly similar. The magnetic moments show qualitatively similar behavior, but their magnitudes differ: surface alloys on Rh(1 1 1) have larger magnetic moments than on Ru(0 0 0 1). We infer that strain plays the determining role in stabilizing these two-dimensional alloys, whereas the differences in magnetic moments can be ultimately attributed to the different number of d-electrons in Rh and Ru.     

Influence of substrate morphology on Pb growth

The crystallographic structure and morphology of Pb layers in their early stage of growth on Si(3 3 5) surface are studied with Reflection High Electron Energy Diffraction (RHEED) and specific resistivity techniques. The vicinal Si(3 3 5), with different surface morphology controlled by the amount of predeposited Au, was used as a substrate. Changes in the substrate morphology, from disordered step distribution through a perfectly ordered Si(3 3 5) to a hill-and-valley structure consisting of wide (1 1 1) terraces and high Miller index facets, cause switching between one- and two-dimensional growth of the Pb structures.