Si(001)衬底上闪锌矿ZnO的制备与分析

采用分子束外延方法在室温下于Si(001)表面上生长ZnO材料。实验发现:样品为闪锌矿和六角结构的ZnO混合多晶薄膜,其表面分布着一系列具一定取向的近似长方形的纳米台柱结构。在不同参数的高温退火后,这些梯形台柱将变小,形成梯形纳米环,或分解为较小的纳米柱及其团簇结构等。分析表明:ZnO混合多晶薄膜的形成,以及表面纳米台柱的演变,与Si(001)衬底、较低温的生长温度及热效应等因素相关联。     

Optical properties of bulk gallium nitride single crystals grown by chloride–hydride vapor-phase epitaxy

A gallium nitride crystal 5 mm in thickness was grown by chloride–hydride vapor-phase epitaxy on a sapphire substrate, from which the crystal separated during cooling. At an early stage, a three-dimensional growth mode was implemented, followed by a switch to a two-dimensional mode. Spectra of exciton reflection, exciton luminescence, and Raman scattering are studied in several regions characteristic of the sample. Analysis of these spectra and comparison with previously obtained data for thin epitaxial GaN layers with a wide range of silicon doping enabled conclusions about the quality of the crystal lattice in these characteristic regions.     

Microstructural assessment of InN-on-GaN films grown by plasma-assisted MBE

The structural properties of InN thin films, grown by rf plasma-assisted molecular beam epitaxy on Ga-face GaN/Al₂O₃(0001) substrates, were investigated by means of conventional and high resolution electron microscopy. Our observations showed that a uniform InN film of total thickness up to 1 μm could be readily grown on GaN without any indication of columnar growth. A clear epitaxial orientation relationship of , was determined. The quality of the InN film was rather good, having threading dislocations as the dominant structural defect with a density in the range of 10⁹–10¹⁰ cm⁻². The crystal lattice parameters of wurtzite InN were estimated by electron diffraction analysis to be a=0.354 nm and c=0.569 nm, using Al₂O₃ as the reference crystal. Heteroepitaxial growth of InN on GaN was accomplished by the introduction of a network of three regularly spaced misfit dislocation arrays at the atomically flat interface plane. The experimentally measured distance of misfit dislocations was 2.72 nm. This is in good agreement with the theoretical value derived from the in-plane lattice mismatch of InN and GaN, which indicated that nearly full relaxation of the interfacial strain between the two crystal lattices was achieved.     

Controllable growth of nanocomposite films with metal nanocrystals sandwiched between dielectric superlattices

Nanocomposite films, with Ni nanocrystals (NCs) (5–8 nm) embedded within SrTiO₃/BaTiO₃ superlattice (period: 30 nm), were prepared by laser molecular beam epitaxy. In situ reflection high-energy electron diffraction was employed to study the role of lattice strain in the self-organization of NCs and the epitaxial growth of SrTiO₃/BaTiO₃ superlattice. It was found that the strain from large lattice mismatch drove the self-organization of Ni NCs. Also the SrTiO₃/BaTiO₃ epitaxial growth was achieved on the NC-dotted irregular interface, because the epitaxial growth occurred preferably at sites with low strain. The fine alternation of the two processes would provide a possible route to engineer controllably the nanocomposite microstructure.     

在(100)GaAs衬底上低温液相外延晶格匹配的In1-xGaxAs1-yPy层及其特性研究

介绍一种低温液相外延技术,可在650℃在GaAs衬底上生长晶格匹配和组份可重复的In1-xGaxAs1-yPy层。给出对外延层进行场发射扫描电镜观察、电子探针、X光双晶衍射、俄歇电子谱和光荧光测量得到的结果。结果表明外延层具有平坦的异质结界面和良好的晶体特性。同时研究了异质结界面的粗糙度和组份梯度变化区域的宽度和晶格失配率的关系。     

Doping characteristics of silicon crystal grown from an atomic beam in vacuum

The layered growth and doping of silicon crystal is investigated on the basis of the kinetic theory of crystal growth. The density of atomic sticking sites on a (110) oriented Si surface is determined. The nonlinear dependences of the doping impurity concentration in the growing crystal on its concentration in the source (the density of the impurity atomic beam), the crystal growth rate, and the growth temperature are derived. The theoretical doping characteristics of silicon with phosphor are found to be in good agreement with the experimental data.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 24–28, January, 1982.     

N型4H-SiC同质外延生长

利用水平式低压热壁CVD (LP-HW-CVD) 生长系统,台阶控制生长和衬底旋转等优化技术,在偏晶向的4H-SiC Si(0001) 晶面衬底上进行4H-SiC同质外延生长,生长温度和压力分别为1550℃和10⁴ Pa,用高纯N₂作为n型掺杂剂的4H-SiC原位掺杂技术,生长速率控制在5μm/h左右.采用扫描电镜(SEM)、原子力显微镜(AFM),傅里叶变换红外光谱(FTIR)和Hg/4H-SiC肖特基结构对同质外延表面形貌、厚度、掺杂浓度以及均匀性进行了测试.实验结果表明,4H-SiC同质外延在表面无明显缺陷,厚度均匀性1.74%, 1.99% 和1.32%(σ/mean),掺杂浓度均匀性为3.37%,2.39%和2.01%.同种工艺条件下,样品间的厚度和掺杂浓度误差为1.54%和3.63%,有很好的工艺可靠性. 关键词： 4H-SiC 同质外延生长 水平热壁CVD 均匀性     

Incorporation of AsSe centers in ZnSe far from equilibrium

An experimental technique employing nuclear transmutation to probe the effects of arsenic doping in ZnSe is presented. ZnSe epitaxial layers are grown from elemental Zn and elemental Se that contains the ⁷⁵Se isotope. Arsenic dopants are incorporated in ZnSe through the decay of ⁷⁵Se to ⁷⁵As which proceeds via electron capture. The 118.5 day half-life of the decay allows ZnSe epitaxial layers to be deposited prior to significant arsenic formation so that As_Se dopants are incorporated after all crystal growth processes are complete. Also, the temperature at the time of dopant incorporation is under investigator control. Because the decay process produces nuclear recoils that are far too small to displace the arsenic dopants from their substitutional selenium sites, no post-growth thermal annealing is required. This experimental technique permits a limiting case of far-from-equilibrium doping, and the long half-life of ⁷⁵Se results in the gradual incorporation of As_Se so that time-resolved studies can be performed. In the experimental work reported here, As_Se centers are introduced in ZnSe homoepitaxial layers in concentrations greater than 1.5×10¹⁸ cm⁻³. Time-resolved low temperature photoluminescence is employed to observe the effects of As_Se doping of ZnSe.     

Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy

In this paper, the impact of growth parameters on the strain relaxation of highly lattice mismatched (11.8%) GaSb grown on GaP substrate by molecular beam epitaxy has been investigated. The surface morphology, misfit dislocation and strain relaxation of the GaSb islands are shown to be highly related to the initial surface treatment, growth rate and temperature. More specifically, Sb-rich surface treatment is shown to promote the formation of Lomer misfit dislocations. Analysis of the misfit dislocation and strain relaxation as functions of the growth temperature and rate led to an optimal growth window for a high quality GaSb epitaxial layer on (001) GaP. With this demonstrated optimized growth, a high mobility (25?500?cm(2)?V (-1)?s(-1) at room temperature) AlSb/InAs heterostructure on a semi-insulating (001) GaP substrate has been achieved.     

Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4

We have grown InN films on nearly lattice-matched (Mn,Zn)Fe₂O₄ (111) substrates at low temperatures by pulsed laser deposition (PLD) and investigated their structural properties. InN films grown at substrate temperatures above 400 °C show poor crystallinity, and their in-plane epitaxial relationship is [10-10]InN//[11-2](Mn,Zn)Fe₂O₄, which means that their lattice mismatch is quite large (11%). By contrast, high quality InN films with flat surfaces can be grown at growth temperatures lower than 150 °C with the ideal in-plane epitaxial relationship of [11-20]InN//[11-2](Mn,Zn)Fe₂O₄, which produces lattice mismatches of as low as 2.0%. X-ray reflectivity measurements have revealed that the thickness of the interfacial layer between the InN and the substrates is reduced from 14 to 8.4 nm when the growth temperature is decreased from 400 °C to room temperature. This suppression of the interface reactions by reducing the growth temperature is probably responsible for the improvement in crystalline quality. These results indicate that the use of (Mn,Zn)Fe₂O₄ (111) substrates at low growth temperatures allows us to achieve nearly lattice matched epitaxial growth of InN.     

45 nm CMOS technology with low temperature selective epitaxy of SiGe

This paper describes the advanced embedded silicon germanium (eSiGe) technologies to apply the 45 nm node CMOS fabrication technology. There are three key techniques as follows. The first technique is a low temperature of epitaxial growth at 550 °C to suppress staking faults in eSiGe layer. The second one is a controlling of recess shape for eSiGe. Sigma(Σ)-shaped recess is applied, because the strain force on the channel of MOSFET is increased effectively by narrowing spacing between source and drain. The third one is to apply particular surface cleaning treatment before the epitaxial growth, to get the excellent SiGe crystallinity. We demonstrated the drain current of I_on = 725 μA/μm and I_off = 100 nA/μm for PMOSFET using above these techniques.     

Epitaxial strain-induced magnetic anisotropy in Sm3Fe5O12 thin films grown by pulsed laser deposition

Sm₃Fe₅O₁₂ thin films of various thicknesses were grown on a (0 0 1)-oriented Gd₃Ga₅O₁₂ substrate by pulsed laser deposition. The crystal structure of the films was strongly dependent on film thickness. The lattice was strained for thinner films due to a lattice mismatch between the film and substrate. This lattice strain was relaxed when the film thickness exceeded a critical thickness of around 660 Å. It is suggested that the epitaxial strain induces uniaxial magnetic anisotropy with an out-of-plane magnetic easy axis.     

Epitaxial growth of ZnSiN2 single-crystalline films on sapphire substrates

A new family of wide band gap nitride semiconductors expressed as II–IV-N₂ have recently attracted attention due to their expected properties such as optical non-linearity. In addition, among these compounds, ZnGeN₂ and ZnSiN₂ have lattice parameters close to GaN and SiC respectively. Up to now, there is very little work reported on this class of materials and no systematic thin film growth study has been reported to date. In this paper we present the first study on the growth of ZnSiN₂ on c-sapphire and (100) silicon substrates using low pressure MOVPE technique. Triethylamine:dimethylzinc adduct, silane diluted in H₂ and ammonia were used as source materials. Single crystalline epitaxial ZnSiN₂ layers were obtained on nitridated c-sapphire substrates in the temperature range 873–973 K by using an adapted II/IV molar ratio ranging from 1.2 to 12. Assuming an orthorhombic unit cell, the lattice parameters calculated from the X-ray diffraction data are a=0.534 nm, b=0.617 nm and c=0.504 nm.     

High-resolution X-ray diffraction studies of combinatorial epitaxial Ge (0 0 1) thin-films on Ge (0 0 1) substrates

We report high-resolution X-ray diffraction studies of combinatorial epitaxial Ge (0 0 1) thin-films with varying doping concentrations of Co and Mn grown on Ge (0 0 1) substrates. The crystalline structure of the epitaxial thin-film has been determined using crystal-truncation rod (CTR) measurements and fitting analysis. By analyzing the fine interference fringes in the CTR intensity profile, strain sensitivity of ∼0.003% has been achieved. Using this method, the evolution of interfacial structures has been quantified as a function of doping concentration.     

Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer

An epitaxial cubic 350-nm-thick cadmium selenide has been grown on silicon for the first time by the method of evaporation and condensation in a quasi-closed volume. It is revealed that, in this method, the optimum substrate temperature is 590°C, the evaporator temperature is 660°C, and the growth time is 2 s. To avoid silicon etching by selenium with formation of amorphous SiSe₂, a high-quality ~100-nm-thick buffer silicon carbide layer has been synthesized on the silicon surface by substituting atoms. The powder diffraction pattern and the Raman spectrum unambiguously correspond to cubic cadmium selenide crystal. The ellipsometric, Raman, and electron diffraction analyses demonstrate high structural perfection of the cadmium selenide layer and the absence of a polycrystalline phase.     

Optical properties of single-phase β-FeSi2 films fabricated by electron beam evaporation

Single-phase semiconducting iron disilicide (β-FeSi₂) films on silicon substrate were fabricated by electron beam evaporation (EBE) technique. For preventing the oxidation of Fe film, silicon/iron/silicon sandwich structure films with different thickness of silicon and iron were deposited and then annealed at different temperatures. X-ray diffraction (XRD), Raman and Fourier transform infrared spectroscopy (FTIR) measurements were carried out to study the phase distribution and crystal quality of the films. Single-phase β-FeSi₂ with high crystal quality was achieved after annealing at 800 °C for 5 h. An apparent direct bandgap E_g of approximately 0.85-0.88 eV was observed in the β-FeSi₂ films. It is considered that the silicon/iron/silicon sandwich structure is suited for formation of single-phase β-FeSi₂ with high crystal quality.     

Growth and conductivity of calcium cuprate films

Crystal and transport properties of epitaxial CaCuO₂ (CCO) films are studied for samples grown on (110)NdGaO₃, (001)SrTiO₃, and (001)LaAlO₃ substrates using the laser ablation technique. The resistivity is found to be dependent on the crystal quality of the films. The conductivity type varies depending on the doping. For lightly doped films with a resistance higher than 0.1 Ω cm, 3D hopping conductivity is observed. For low-resistance CCO films doped with Sr, a power law temperature dependence is found, which is inconsistent with the hopping conductivity. The influence of substrate tilting on the subsequent growth of CaCuO₂ films is studied. YBCO/CCO heterostructures preserve high critical temperatures and small widths of superconducting transitions, which is of special importance for growing Josephson heterostructures for superconducting electronics.     

Fast Liquid Phase Epitaxial Growth for Perovskite Single Crystals

Semiconductors grown by the solution-processed method have shown low-cost,facile fabrication process and comparable performance.However,there are many reasons why it is difficult to achieve high quality films.For example,lattice constant mismatch is one of the problems when photovoltaic devices made of organ metallic perovskites.In this work,MAPbBr^{MA=CH3NH3^+}perovskites single crystals grown on the surface of MAPbBr2.5 CI0.5 perovskites single crystals via liquid epitaxial growth method is demonstrated.It is found that when the lattice constants of the two perovskite single crystals are matched,another crystal can be grown on the surface of one crystal by epitaxial growth.The whole epitaxy growth process does not require high heating temperature and long heating time.X-ray diffraction method is used to prove the lattice plane of the substrate and the epitaxial grown layer.A scanning electron microscope is used to measure the thickness of the epitaxial layer.Compared with perovskite-based photodetectors without epitaxial growth layer,perovskite-based photodetectors with epitaxial growth layer have lower dark current density and higher optical responsibility.     

Lattice strain in garnet single crystals caused by high-energy heavy ion irradiation

The effect of high-energy heavy ion bombardment on the lattice parameter of single crystal garnets is investigated. Lattice expansion normal to the surface corresponding to lateral compressive strain is observed via x-ray reflection topography and rocking curve analysis using a double-crystal diffractometer. Studied are (111) garnet wafers of differing composition and epitaxial ferrimagnetic iron garnet films on pure and MgZr-substituted (111) Gd₃Ga₅O₁₂ substrates. Using¹³²Xe and²⁰⁸Pb ions of 1.4MeV/nucleon specific energy, the lattice expansion increases approximately linearly with dose over several orders of magnitude. The specific lattice parameter change is approximately 10⁻¹⁴ per ion per cm² for¹³²Xe ions. A triple epitaxial film is used to obtain strain depth profiles     

Epitaxial growth La0.67Ca0.33MnO3 thin film by radio frequency sputtering method

Perfect epitaxial growth of La_0.67Ca_0.33MnO₃ (LCMO) thin film has been achieved on (1 0 0) LaAlO₃ (LAO) single crystal substrate by radio frequency sputtering method. X-ray diffraction (XRD) and electron diffraction analysis indicates that La_0.67Ca_0.33MnO₃ film grows epitaxially on LaAlO₃ along [1 0 0] direction of the substrate. The resistivity variation with temperature of the film shows a sharp metal to semiconductor transition peak around 253 K, which is close to that of the target. The magnetoresistance (MR) also reveals high quality epitaxy film characteristic at low temperatures and near the metal to semiconductor transition temperature.