Fabrication and electrical characterization of nickel/p-Si Schottky diode at low temperature

In this study the current–voltage and capacitance–voltage characteristics of metal semiconductor Ni/p-Si(100) based Schottky diode on p- type silicon measured over a wide temperature range (60–300 K) have been studied on the basis of thermionic emission diffusion mechanism and the assumption of a Gaussian distribution of barrier heights. The parameters ideality factor, barrier height and series resistance are determined from the forward bias current–voltage characteristics. The barrier height for Ni/p-Si(100) Schottky diode found to vary between 0.513 eV and 0.205 eV, and the ideality factor between 2.34 and 8.88 on decreasing temperature 300–60 K. A plot involving the use of ϕ_b versus 1/T data is used to gather evidence for the occurrence of a Gaussian distribution of barrier height and obtain the value of standard deviation. The observed temperature dependences of barrier height and ideality factor and non-linear activation energy plot are attributed to the Gaussian distribution of barrier heights at the metal-semiconductor contact. The barrier height of Ni/p-Si(100) Schottky diode was also measured over wide temperature from the capacitance-voltage study.     

High sensitivity Schottky junction diode based on monolithically grown aligned polypyrrole nanofibers: Broad range detection of m-dihydroxybenzene

Aligned p-type polypyrrole (PPy) nanofibers (NFs) thin film was grown on n-type silicon (100) substrate by an electrochemical technique to fabricate Schottky junction diode for the efficient detection of m-dihydroxybenzene chemical. The highly dense and well aligned PPy NFs with the average diameter (∼150–200 nm) were grown on n-type Si substrate. The formation of aligned PPy NFs was confirmed by elucidating the structural, compositional and the optical properties. The electrochemical behavior of the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode was evaluated by cyclovoltametry (CV) and current (I)-voltage (V) measurements with the variation of m-dihydroxybenzene concentration in the phosphate buffer solution (PBS). The fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode exhibited the rectifying behavior of I–V curve with the addition of m-dihydroxybenzene chemical, while a weak rectifying I–V behavior was observed without m-dihydroxybenzene chemical. This non-linear I–V behavior suggested the formation of Schottky barrier at the interface of Pt layer and p-aligned PPy NFs/n-silicon thin film layer. By analyzing the I–V characteristics, the fabricated Pt/p-aligned PPy NFs/n-silicon Schottky junction diode displayed reasonably high sensitivity ∼23.67 μAmM⁻¹cm⁻², good detection limit of ∼1.51 mM with correlation coefficient (R) of ∼0.9966 and short response time (10 s).     

Dynamics of surface catalyzed reactions; the roles of surface defects, surface diffusion, and hot electrons

The mechanism that controls bond breaking at transition metal surfaces has been studied with sum frequency generation (SFG), scanning tunneling microscopy (STM), and catalytic nanodiodes operating under the high-pressure conditions. The combination of these techniques permits us to understand the role of surface defects, surface diffusion, and hot electrons in dynamics of surface catalyzed reactions. Sum frequency generation vibrational spectroscopy and kinetic measurements were performed under 1.5 Torr of cyclohexene hydrogenation/dehydrogenation in the presence and absence of H(2) and over the temperature range 300-500 K on the Pt(100) and Pt(111) surfaces. The structure specificity of the Pt(100) and Pt(111) surfaces is exhibited by the surface species present during reaction. On Pt(100), pi-allyl c-C6H9, cyclohexyl (C6H11), and 1,4-cyclohexadiene are identified adsorbates, while on the Pt(111) surface, pi-allyl c-C6H9, 1,4-cyclohexadiene, and 1,3-cyclohexadiene are present. A scanning tunneling microscope that can be operated at high pressures and temperatures was used to study the Pt(111) surface during the catalytic hydrogenation/dehydrogenation of cyclohexene and its poisoning with CO. It was found that catalytically active surfaces were always disordered, while ordered surface were always catalytically deactivated. Only in the case of the CO poisoning at 350 K was a surface with a mobile adsorbed monolayer not catalytically active. From these results, a CO-dominated mobile overlayer that prevents reactant adsorption was proposed. By using the catalytic nanodiode, we detected the continuous flow of hot electron currents that is induced by the exothermic catalytic reaction. During the platinum-catalyzed oxidation of carbon monoxide, we monitored the flow of hot electrons over several hours using a metal-semiconductor Schottky diode composed of Pt and TiO2. The thickness of the Pt film used as the catalyst was 5 nm, less than the electron mean free path, resulting in the ballistic transport of hot electrons through the metal. The electron flow was detected as a chemicurrent if the excess electron kinetic energy generated by the exothermic reaction was larger than the effective Schottky barrier formed at the metal-semiconductor interface. The measurement of continuous chemicurrent indicated that chemical energy of exothermic catalytic reaction was directly converted into hot electron flux in the catalytic nanodiode. We found the chemicurrent was well-correlated with the turnover rate of CO oxidation separately measured by gas chromatography.     

Junction properties of In2O3:Al2O3 composite on p-type silicon by sol–gel method

Schottky barrier diode based on composite of In₂O₃ and Al₂O₃ was fabricated using sol–gel spin coating method. The electrical properties of the diode were studied using current–voltage, capacitance–voltage and resistance–voltage characteristics. The non-linear I–V characteristics suggest the formation of Schottky barrier diode. The I–V characteristics of the diode were analyzed using the thermionic emission model. The electrical properties of the diode were investigated in the temperature range of 303–243 K. It was observed that the barrier height of the diode increases with increase in temperature. The capacitance of the diode was measured at various frequencies and temperatures. It was seen that the capacitance of the diode is decreased with increase in frequency. On the other hand, the capacitance was observed to increase with increasing temperature.     

Polyaniline/gallium doped ZnO heterostructure device via plasma enhanced polymerization technique: Preparation, characterization and electrical properties

The ZnO and gallium-doped ZnO nanoparticles (NPs) were synthesized by simple chemical method and used for the fabrication of p-polyaniline/n-ZnO heterostructures devices in which polyaniline was deposited by plasma-enhanced polymerization. The increment in the crystallite sizes of gallium doped ZnO nanoparticles from ~21.85 nm to ~32.39 nm indicated the incorporation of gallium ion into the ZnO nanoparticles. The surface and structural studies investigated the participation of protonated N atom for the bond formation between polyaniline and gallium-ZnO through partial hydrogen bonding. Compared to a Pt/polyaniline/ZnO diode, the fabricated Pt/polyaniline/gallium-ZnO heterostructure diode exhibited good rectifying behavior with Current–Voltage characteristics of improved saturation current, low ideality factor, and a high barrier height might due to the efficient charge conduction via gallium ion at the junction of the polyaniline/gallium doped-ZnO interface.

Radiation deterioration in mechanical properties and ion exchange capacity of Nafion N117 swelling in water

The base form Nafion N117 samples swelling in the oxygen-saturated distilled water were irradiated with γ-rays or with electron beams at various doses up to 1600 kGy at room temperature or at 343 K to obtain detailed information on the effect of oxygen on the radiation deterioration in the Nafion mechanical properties and in the ion exchange capacity. The contribution of the radical reactions where oxygen molecules did not participate was dominant for the radiation deterioration in the mechanical properties of the Nafion N117 membrane swelling in the oxygen-saturated distilled water at room temperature. The effect of oxygen molecules was not significant due to the little oxygen concentration in the distilled water even though oxygen was saturated in the water. The Nafion N117 membrane irradiated with γ-rays at 343 K became a weak and brittle material, since the rise of the temperature activated the reactions. Oxygen molecules, in contrast, have negligible part in the reactions at 343 K due to their lower solubility in the water. We observed the negligible effect of the radiation sources as well as of the dose rate below 10 kGy/h on the radiation deterioration in Nafion N117 mechanical properties at room temperature. The irradiation of the Nafion membrane with γ-rays or with electron beams is one of the acceleration tests of the Nafion degradation. We made clear that the dissolved fluorine measured using a fluoride ion meter is a hopeful index for the in situ judging of the Nafion mechanical deterioration. The ion exchange capacity of the membrane irradiated up to 1600 kGy was the 20% decrease of the initial capacity at room temperature. Nafion side chains terminating with –SO₃⁻ M⁺ groups were radiation-durable compared with the backbone.     

Electrical and structural properties of Pd/V/n‐type InP (111) Schottky structure as a function of annealing temperature

Palladium/Vanadium (Pd/V) Schottky structures are fabricated on n‐type InP (100) and the electrical, structural and surface morphological characteristics have been studied at different annealing temperatures. The extracted barrier height of as‐deposited Pd/V/n‐InP Schottky diode is 0.59 eV (I–V) and 0.79 eV (C–V), respectively. However, the Schottky barrier height of the Pd/V Schottky contact slightly increases to 0.61 eV (I–V) and 0.84 eV (C–V) when the contact is annealed at 200 °C for 1 min. It is observed that the Schottky barrier height of the contact slightly decreases after annealing at 300, 400 and 500 °C for 1 min in N₂ atmosphere. From the above observations, it is clear that the electrical characteristics of Pd/V Schottky contacts improve after annealing at 200 °C. This indicates that the optimum annealing temperature for the Pd/V Schottky contact is 200 °C. Basing on the auger electron spectroscopy and X‐ray diffraction results, the formation of Pd‐In intermetallic compound at the interface may be the reason for the increase of barrier height upon annealing at 200 °C. The formation of phosphide phases at the Pd/V/n‐InP interface could be the reason for the degradation in the barrier heights after annealing at 300, 400 and 500 °C. From the AFM results, it is evident that the overall surface morphology of the Pd/V Schottky contacts is fairly smooth. Copyright © 2011 John Wiley & Sons, Ltd.     

Hydrogen sensing properties of a Pd/SiO2/AlGaN-based MOS diode

Hydrogen sensing properties of a Pd/AlGaN-based Schottky diode are improved by the deposition of SiO₂ at the metal/semiconductor (MS) interface. The wide Schottky barrier height variation of the MOS diode could be attributed to the large electric field across the SiO₂ layer. This leads to the presence of more hydrogen dipoles caused by the polarization effect. The sensing response of the MOS diode at room temperature (1.3 × 10⁵) is comparable to that of the MS one at 150 °C (2.04 × 10⁵). Thus, the MOS-type sensing device shows the benefit of low-temperature operation. Kinetic analyses confirm that the short response times of the MOS diode are attributed to high reaction rate at the Pd/SiO₂ interface.     

Electron flow generated by gas phase exothermic catalytic reactions using a platinum-gallium nitride nanodiode

We report steady-state conversion of chemical reaction energy into hot electrons by ballistic injection into a platinum-gallium nitride (Pt/GaN) nanodiode during the platinum-catalyzed oxidation of carbon monoxide. Surface catalytic reactions of molecules from the gas phase generated continuous steady-state hot electron currents with energies at least that of Schottky barrier energy ( approximately 1 eV). These hot electron currents were observed on two different nanodiodes (Pt/TiO2 and Pt/GaN) and represent a new method of chemical energy conversion.     

<Superscript>63</Superscript>Ni schottky barrier nuclear battery of 4H-SiC

The design, fabrication, and testing of a 4H-SiC Schottky betavoltaic nuclear battery based on MEMS fabrication technology are presented in this paper. It uses a Schottky diode with an active area of 3.14 mm² to collect the charge from a 4 mCi/cm^{2 63}Ni source. Some of the critical steps in process integration for fabricating silicon carbide-based Schottky diode were addressed. A prototype of this battery was fabricated and tested under the illumination of the ⁶³Ni source with an activity of 0.12 mCi. An open circuit voltage (V _OC) of 0.27 V and a short circuit current density (J _SC) of 25.57 nA/cm² are measured. The maximum output power density (P _max) of 4.08 nW/cm² and power conversion efficiency (η) of 1.01% is obtained. The performance of this battery is expected to be significantly improved by using larger activity and optimizing the design and processing technology of the battery. By achieving comparable performance with previously constructed p–n or p–i–n junction energy conversion structures, the Schottky barrier diode proves to be a feasible approach to achieve practical betavoltaics.     

Heated graphite cylinder electrodes

A new heated graphite cylinder electrode (HGCE) has been successfully fabricated, which arrangement is similar to that of the heated metal (Pt or Au) wire electrode invented by Grundler. The cylinders’ diameters range from ca. 95 to 300 μm obtained by grinding the commercial available pencil graphite. HGCEs demonstrate rapid responses to the heating up and high thermal stability during being continuously heated. Predictions for the temperature rise at the electrode surface based on an empirical model for a natural laminar flow at heated cylinders are in good agreement with the experimental results. The temperature rise at HGCEs was found to be strongly dependent on the square of heating currents, the diameter and the temperature coefficient of the specific resistance of the graphite cylinders, and less dependent on the bulk solution temperature. It is indicated the temperature rise at HGCEs was linearly changed with the reciprocal of the square of the cylinder diameter as the heating currents were given. The evolution from peak-shaped to sigmoid-shaped voltammograms was manifested at HGCEs as the temperature increased from 20 to 95 °C. The compatible between biological substances and graphite electrodes might facilitate studies on the electrochemical behavior of them at HGCEs.     

Ni/4H-SiC 肖特基势垒磁场下输运性质的分析

Ni/4H-SiC Schottky contacts with good characteristics were fabricated using electron beam evaporation to deposit Ni on 4H-SiC（（0001）Si face）. Current-voltage（I-V）characteristics of Ni / 4H-SiC Schottky barrier have been studied in the temperature range from 160 K to 300 K in magnetic fields（B）up to 10 T. The thermionic emission theory and relaxation time approximation Boltzmann eqation were employed to calculate the I - V characteristics,and it is found that the change of current shows a linear relation with B2 and V,and is inversely proportional to the temperature,which well agrees with experimental results.     

EXCISION REPAIR OF PYRIMIDINE DIMERS IN MARSUPIAL CELLS

Monodelphis domestica was further characterized as a model for photobiological studies by measuring the excision repair capabilities of this mammal's cells both in vivo and in vitro. Excision repair capability of the established marsupial cell line, Pt K2 ( Potorous tridactylus ), was also determined. In animals held in the dark, we observed that ˜50% of the dimers were removed by 12 and 15 h after irradiation with 400 J m⁻² and 600 J m⁻², respectively, from an FS-40 sunlamp (280–400 nm). Cells from primary cultures of M. domestica excised ˜50% of the dimers by 24 h after irradiating with 50 J m⁻² and 36 h after exposure to 100 J m⁻² with no loss of dimers observed 24 h following a fluence of 300 J m⁻². Pt K2 cells were observed to have removed -50% of the dimers at -12 h after 50 J m⁻² with only -10% of the dimers removed at 24 h following 300 J m⁻². The observed loss of pyrimidine dimers from epidermal DNA of UV-irradiated animals and from fibroblasts in culture, held in the dark, suggests that these marsupial cells are capable of DNA excision repair.     

Direct control of electron transfer to the surface-CO bond on a Pt/TiO2 catalytic diode

We study CO adsorption on a multilayer catalytic diode in which electron transfer at the metal-semiconductor (Pt/TiO(2)) junction is controlled by an applied external voltage. The multilayer diode structure enhances infrared absorption signals from CO molecules adsorbed on the small area Pt surface. We find that the diode behaves like a Schottky junction and that changes in electron transfer at the junction are directly correlated with reversible shifts in the vibrational frequency of adsorbed CO. Infrared polarization and incidence angle dependent studies show that the magnitude of vibrational frequency shift varies with orientation of the molecules being probed and increases with proximity to the Pt/TiO(2) interface. The results demonstrate the ability to control the metal-adsorbate bond through external electronic modifications of a metal-support junction. The catalytic diode can potentially provide control of the surface chemical bond by an external voltage, providing a new approach for investigations in heterogeneous catalysis, sensors, and plasmonic devices.     

Phase transition in hydrazinium hydrogen oxalate. A calorimetric study of the short hydrogen bond system

The heat capacity of hydrazinium hydrogen oxalate crystal has been measured between 14 and 300 K. A first-order phase transition was found at 217.6 K. Total transition enthalpy and entropy are 1.09 kJ mol⁻¹ and 4.18 J K⁻¹ mol⁻¹, respectively. The high temperature phase supercooled to 165−170 K. The heat capacity of the supercooled high temperature phase was significantly larger than that of the low temperature phase. By fitting a Schottky heat capacity function to the heat capacity difference, a Schottky energy level was found at (135 ± 4) cm⁻¹ above the ground state and related to the tunneling splitting of the energy levels of the short acidic hydrogen bond. A thermodynamic model of the first-order transition is proposed in which the Schottky anomaly plays the main role. Far-infrared spectra of hydrazinium hydrogen oxalate are reported for the frequency range 400–30 cm⁻¹ at temperatures of 295 and 90 K.     

Precise regulation of Ultra-thin platinum decorated Gold/Graphite carbon nitride photocatalysts by atomic layer deposition for efficient degradation of Rhodamine B under simulated sunlight

Atomic Layer Deposition (ALD) precise controlling ultra-thin platinum (Pt) modified Graphite carbon nitride (g-C₃N₄) photocatalysts, which had been doped with gold nanoparticles (Au NPs) by photodeposition, were successfully synthesized. The experimental results showed that precise regulation of platinum decorated C₃N₄-Au(C₃N₄-Au/nPt (n is the number of Pt ALD cycles, 1 Å per cycle)) exhibited excellent photocatalytic degradation ability for Rhodamine B (RhB). Under simulated sunlight irradiation, the degradation rate of 10 mg/L RhB(100 mL) by 1.5 mg C₃N₄-Au/10Pt catalysts was 95.8% within 60 min that is much better than other photocatalysts for the degradation of RhB. The efficient degradation mechanism of RhB by C₃N₄-Au/10Pt photocatalysts was studied and the experiments demonstrated the ·O₂^– as main active species played an important role in the photocatalytic process. Local surface plasmon resonance (LSPR) of Au NPs and Schottky barrier between Pt clusters and g-C₃N₄ may be the reasons for enhanced C₃N₄-Au/10Pt photocatalytic performances. Furthermore, the successive catalytic cycles revealed the excellent stability of C₃N₄-Au/10Pt photocatalyst.     

Characteristics of Light Emission and Radicals Formed by Contact Glow Discharge Electrolysis of an Aqueous Solution

In this work, light emissions and radicals formed by plasma of contact glow discharge electrolysis were investigated. The plasma was generated by glow discharges at the tip of a Pt anode in contact with a sulfuric acid solution. Emissions of H atoms and OH radicals were observed when the applied voltage was above 430 V. When the applied voltage increased to 450 V, emissions of O atoms were additionally detected. The emission intensities of these radicals and atoms increased with the increasing applied voltage. When the applied voltage exceeded 460 V, thermal radiation from the Pt anode was apparent in the visible and near infrared region. Electron temperature of the plasma increased with the applied voltage from 1.0 × 10⁴ to 1.5 × 10⁴ K by comparison of the intensities of H_α and H_β lines. The mean electron density was estimated to be 7.4 × 10¹⁷ cm⁻³ by the method of Stark broadening.     

Efficiency of radical yield in alkylthymine and alkyluracil by high-LET irradiation

Penthylthymines and hexyl-, nonyl-, and decyl- uracils were irradiated by C-ion (3.5 GeV) and γ-ray at 77 K. ESR spectra were measured to study radiation induced radicals in the temperature range from 108 to 273 K. A dihydro-5-yl (5-yl) radical formed by H addition to C6 carbon and a secondary alkyl radical by C–H bond fission at the second carbon from the end of the alkyl group were produced at 108 K. A dihydrouracil-6-yl (6-yl) radical formed by H addition to C5 carbon increased with increasing temperature for alkyluracils. The spectral feature obtained by C-ion irradiation was coincident with that by γ-irradiation.Total radical yields increased by alkylation and with increasing the length of alkyl chain. Yields of both 5-yl and secondary alkyl radicals irradiated by C-ion were less than those by γ-ray for penthylthymines and hexyluracil. On the contrary, radical yields were almost the same between ion and γ-ray irradiation for nonyl- and decyl-uracil. Mechanism of radical formation and effect of high-LET irradiation were discussed.