Diffusion of oxygen atom in the topmost layer of the Si(1 0 0) surface: Structures and oxidation kinetics

The incorporations and migrations of the atomic oxygen in the topmost layer Si(1 0 0)-p(2 × 2) silicon surface, are investigated theoretically using density functional theory. We show that the diffusion is dependent on the starting and the final surrounding environment and does not simply consist in hops from one silicon-silicon bond to another. The activation energies range from 0.11 eV to 2.59 eV.     

Molecular nano-arches on silicon

The formation of molecular nano-arches on the Si(1 1 1)-7 × 7 surface was modeled using density functional theory (DFT). It has been suggested, based on the calculations, that the arches are formed by molecular dimers of chlorobenzene at near-monolayer coverages. Molecules of the dimer are covalently bound to two silicon adatoms and to each other thereby forming a molecular arch on the surface. The structure of the molecular dimer was calculated at the B3LYP/6-31G(d) level of theory. The dimers were found to be stable at room temperature, and to form a near-monolayer coverage, which has been observed in the experiment [X.H. Chen, Q. Kong, J.C. Polanyi, D. Rogers, S. So, Surf. Sci. 340 (1995) 224; Y. Cao, J.F. Deng, G.Q. Xu, J. Chem. Phys. 112 (2000) 4759].     

Theoretical investigation of the initial steps of the adsorption of N atoms on Si(1 0 0)-2×1

Structural, energetics, and mechanistics aspects of initial steps of the reaction of a N atom with Si(1 0 0)-2×1 modeled by the Si₉H₁₂+N system are reported. Hybrid density functional B3LYP calculations predict a barrierless first step leading to an adsorbate where N is bound to one of the dimer Si. Two possible activated routes for internal rearrangements were found, with that leading to the incorporation of Si below the first layer predicted to be kinetically dominant (98%) under the experimental conditions. This structure and frequency calculations are consistent with the experimental finding of a planar NSi₃ moeity and with the experimental SiN asymmetric stretching frequency of the NSi₃ groups.     

Au_7团簇吸附O_2和CO及其对CO的催化反应机理研究

本文采用密度泛函理论,研究了Au_7团簇催化CO的氧化反应机理.研究发现,二维平面结构的Au_7团簇更容易吸附CO和O_2分子. Au_7团簇吸附一个O_2分子的吸附能为0.64 eV,但在吸附多个O_2分子时,平均吸附能有了明显的下降,表明Au_7团簇进行多吸附O_2分子的可能性不大. Au_7团簇吸附一个CO分子的吸附能为1.26 eV,且在吸附多个CO分子时,平均吸附能虽有减少,但减小的幅度不大,说明Au_7团簇有可能吸附多个CO分子.此外,在Au_7团簇催化CO的氧化反应过程中,整个反应克服的最高势垒仅为0.34 eV,说明Au_7团簇有望成为良好的CO氧化催化剂.     

Active oxidation: Silicon etching and oxide decomposition basic mechanisms using density functional theory

The etching of silicon atom from the Si(1 0 0)-p(2 × 2) surface, i.e. the desorption of SiO molecules from this surface, either clean or pre-oxidized, is investigated at the density functional theory level. The reaction paths for desorption are given as a function of the initial oxidation state of the extracted silicon atom. The associated activation energies and the atomic configurations are discussed. Particularly, it is shown that desorption of SiO molecules takes place during conventional thermal oxide growth (∼2 eV activation) via non-oxidized silicon atoms. Further SiO extraction mechanisms of higher silicon oxidation states required higher temperatures. In particular, doubly oxidized silicon atoms (Si²⁺) are able to decompose with an activation of ∼4 eV which corresponds to the actual temperature where decomposition of oxides is observed. This confirms the statement that decomposition of oxide layer nucleates at the interface with silicon where Si²⁺ has been detected thanks to XPS experiment.     

A density functional theory study of formaldehyde adsorption and oxidation on CeO2(1 1 1) surface

The effects of different oxygen species and vacancies on the adsorption and oxidation of formaldehyde over CeO₂(1 1 1) surface were systematically investigated by using density functional theory (DFT) method. On the stoichiometric CeO₂(1 1 1) surface, the C-H bond rupture barriers of chemisorbed formaldehyde are much higher than that of formaldehyde desorption. On the reduced CeO₂(1 1 1) surface, the energy barriers of C-H bond ruptures are less than those on the stoichiometric CeO₂(1 1 1) surface. If the C-H bond rupture occurs, CO and H₂ form quickly with low energy barriers. When O₂ adsorbs on the reduced (1 1 1) surface (O₂/O_v species), the C-H bond rupture barriers of formaldehyde are greatly reduced in comparison with those on the stoichiometric CeO₂(1 1 1) surface. If O₂ adsorbs on oxygen vacancy at sub-layer surface, its oxidative roles on formaldehyde are much similar to that of O₂/O_v species.     

Investigations of meta-stable and post-spinel silicon nitrides

Since the discovery of post-spinel Si₃N₄, its fundamental physical properties are highly required. In this paper, theoretical calculations are performed to investigate the structural and elastic properties of the β-, γ-, wII- and post-spinel Si₃N₄ polymorphs. The calculated ground-state properties compare well with available experiments. The phase transformations of the β-, γ-, wII- and post-spinel phases are investigated by the famous plane-wave pseudo-potential density functional theory. From the elastic constants obtained, we find that β-, γ- and wII-Si₃N₄ are stable at 0 GPa and the post-spinel phase is unstable/stable at 0 GPa/160 GPa. When the high-temperature β→γ transformation is bypassed due to kinetic reasons, β-Si₃N₄ is predicted to undergo a first-order phase transition to a new phase (wII-Si₃N₄). It is found that the transition pressures of β→wII and γ→post-spinel transitions are 20.8 GPa and 152.5 GPa, respectively. The phase boundary of the γ→post-spinel transition can be described as P=152.3631−6.39×10⁻³T+2.01062×10⁻⁵T²−1.93962×10⁻⁹T³. Through the quasi-harmonic approximation, the dependences of heat capacity, entropy, thermal expansion coefficient and the Debye temperature on temperature, are also successfully predicted.     

First principles study of Si(3 3 5)-Au surface

The structural and electronic properties of gold decorated Si(335) surface are studied by means of density-functional calculations. The resulting structural model indicates that the Au atoms substitute some of the Si atoms in the middle of the terrace in the surface layer. Calculated electronic band structure near the Fermi energy features two metallic bands, one coming from the step edge Si atoms and the other one having its origin in hybridization between the Au and neighboring Si atoms in the middle of the terrace. The obtained electronic bands remain in good agreement with photoemission data.     

Density functional study of initial HfCl4 adsorption and decomposition reactions on silicon surfaces with SiON interfacial layer

The initial adsorption and decomposition of HfCl₄ on silicon surfaces with different types of SiON interfacial layers are investigated using density functional theory. We find that the reactions of HfCl₄ on both the hydroxylated and nitrided silicon surfaces proceed through similar reaction pathways. By comparison of the reaction energies of HfCl₄ with the hydroxyl and amino surface sites, we find that it is both kinetically and thermodynamically favorable for the reactions of HfCl₄ on hydroxyl site of silicon substrates. Comparing with the adjacent bridging oxygen, we also find that the neighboring hydroxyl can facilitate the adsorption of HfCl₄ on the amido surface site. Also, it is more kinetically and thermodynamically favorable for the reaction of HfCl₄ with bridging NH site than that with NH₂ site.     

A review on techniques to fabricate silicon oxide arrays for biomolecules patterning

The development of methods for pattern proteins and other functional molecules on the surfaces with nanoscale accuracy is indispensable to take advantage of their properties in ultrasensitive and/or high-density devices. Several methods are used to fabricate organized micro/nanohierarchical structures on a surface and give the ability of molecules to self-assemble by using the mutual recognition properties. However, the supramolecular organization is difficult to extend from nano- to mesoscopic length scales or does not allow accurate placement of the desired structures on a specific region of an inhomogeneous surface. This paper reviews the different techniques used to fabricate nano/millimeter range patterns on SiO₂/Si substrates and local chemical grafting to perform successful attachment of biomolecules on predetermined areas.     

Vibrational study of silicon oxidation: H2O on Si(100)

The vibrational spectrum of water dissociatively adsorbed on Si(100) surfaces is obtained with surface infrared absorption spectroscopy. Low frequency spectra (< 1450 cm⁻¹ are acquired using a buried CoSi₂ layer as an internal mirror to perform external reflection spectroscopy. On clean Si(100), water dissociates into H and OH surface species as evidenced by EELS results [1] in the literature which show a Si---H stretching vibration (2082 cm⁻¹), and SiO---H vibrations (O---H stretch at 3660 cm⁻¹ and the Si---O---H bend and Si---O stretch of the hydroxyl group centered around 820 cm⁻¹). In this paper, infrared (IR) measurements are presented which confirm and resolve the issue of a puzzling isotopic shift for the Si---O mode of the surface hydroxyl group, namely, that the Si---O stretch of the O---H surface species formed upon H₂O exposure occurs at 825 cm⁻¹, while the Si---O stretch of the ---OD surface species formed upon D₂O exposure shifts to 840 cm⁻¹, contrary to what is expected for simple reduced mass arguments. The higher resolution of IR measurements versus typical EELS measurements makes it possible to identify a new mode at 898 cm⁻¹, which is an important piece of evidence in understanding the anomalous frequency shift. By comparing the results of measurements for adsorption of H¹⁶₂O, H¹⁸₂O and D₂O with the results from recently performed first-principles calculations, it can be shown that a strong vibrational interaction between the Si---O stretching and Si---O---H bending functional group vibrations of the hydroxyl group accounts for the observed isotopic shifts.     

Sc_(13)团簇的稳定性和磁性研究

使用梯度修正的密度泛函理论,对Sc_(13)团簇的稳定性和磁性进行了广泛的研究.与邻近钪团簇,或者与其它13-原子3d过渡金属团簇相比,Sc_(13)团簇的基态结构二十面体具有最高对称性,结构和磁性均表现出高的稳定性.由于二十面体的高对称性,Sc_(13)团簇的对称性分子轨道为晶体场分裂壳层9A_g(1),10T_(1u)(3),8H_g(5),10A_g(1),6T_(2u)(3),11T_(1u)(3),3G_g(4),3G_u(4),and 9H_g(5).20个价电子以类似于凝胶模型的1S~21P~61D~(10)2S~2壳层填充前四组壳层,其余19个价电子依据洪德法则填充后五组壳层,从而产生了19.0μB的磁矩.5个半填充的晶体场分裂壳层与离域价电子填充的1S~21P~61D~(10)2S~2类壳层导致了稳定的高磁矩Sc_(13)团簇.     

A theoretical study of structural and electronic properties of a missing dimer defect on Si- and C-terminated SiC(0 0 1)

We present a theoretical study of the geometrical and electronic properties of the C- and Si-terminated -SiC(0 0 1) surfaces in the vicinity of the missing dimer defect. The experimental results suggest that the atomic structures of these two surfaces may be considerably modified by external stress. In our present study we have considered the possible influence of this factor on the surface geometry of both systems. We have shown that the structural differences between the C- and Si-terminated surfaces lead to their different behaviour in the presence of a missing dimer and applied stress. In the case of the C-terminated c(2×2) surface, the missing dimer defect causes the buckling of the adjacent carbon dimers lying in the line of the defect (dimer atoms adjacent to the defect have vertical positions lower by 0.18 Å). This effect becomes more pronounced in the presence of compressive stress — the stress of 8% leads to the buckling of these two dimers of around 0.5 Å. The vertical positions of silicon atoms located directly below the defect were increased by 0.2 Å. We have also found that the missing dimer influences the structure of the carbon dimers on the neighbouring lines of dimers. Contrary to the C-terminated surface, the missing dimer defect on the Si-terminated SiC(0 0 1)-p(2×1) surface remains neutral for silicon dimers located in the line of defect, i.e. the dimers do not change their geometrical properties in unstrained structure nor in the presence of a tensile stress. On the other hand, this defect modifies considerably the geometry of the dimers from the two neighbouring lines of dimers by reducing their bond lengths and vertical positions. Changes in the geometrical properties of the second neighbour dimers (with respect to the defect) in these two lines are also noticeable. Moreover, we have found that the presence of a missing dimer modifies significantly the positions of the adjacent subsurface carbon atoms.     

Stress development and impurity segregation during oxidation of the Si(1 0 0) surface

We have studied the segregation of P and B impurities during oxidation of the Si(1 0 0) surface by means of combined static and dynamical first-principles simulations based on density functional theory. In the bare surface, dopants segregate to chemically stable surface sites or to locally compressed subsurface sites. Surface oxidation is accompanied by development of tensile surface stress up to 2.9 Nm⁻¹ at a coverage of 1.5 monolayers of oxygen and by formation of oxidised Si species with charges increasing approximately linearly with the number of neighbouring oxygen atoms. Substitutional P and B defects are energetically unstable within the native oxide layer, and are preferentially located at or beneath the Si/SiO_x interface. Consistently, first-principles molecular dynamics simulations of native oxide formation on doped surfaces reveal that dopants avoid the formation of P-O and B-O bonds, suggesting a surface oxidation mechanism whereby impurities remain trapped at the Si/SiO_x interface. This seems to preclude a direct influence of impurities on the surface electrostatics and, hence, on the interactions with an external environment.     

铁铜双核羰基簇合物结构的理论研究

采用密度泛函理论BPW91方法在6-311+G(d)基组水平上, 对FeCu团簇吸附CO过程中可能的几何结构和电子态进行了系统研究. 计算结果表明: FeCu双原子团簇饱和吸附CO分子数是7, 配位过程均为放热反应, 吸附能最大的结构是FeCu(CO)1. 金属原子满足18电子规则,对CO的吸附位置起主要决定作用, 即CO配位由于遵循18电子规律, 即Fe原子上形成Fe(CO)4Cu 之后CO与Cu原子发生配位形成Fe(CO)4Cu(CO)3. 各配合物中 Fe电荷密度最大的结构是Fe(CO)4Cu(CO)1, Cu电荷密度最大的结构Fe(CO)4Cu(CO)3.     

铁钴双核羰基簇合物结构的密度泛函理论研究

采用密度泛函理论BPW91方法在6-311+G(d,p)基组水平上,对Fe_2、Co_2和FeCo团簇吸附CO过程中可能的几何结构和电子态进行了系统研究.结果表明:三种双原子团簇饱和吸附CO分子数分别为9、8、8,吸附的规律各不相同,簇合物的基态均随着吸附CO分子数的增加而减小.吸附过程中金属原子满足18电子规则对CO吸附位置的起主要决定作用,相同的CO数目而言,FeCo的吸附能总体介于Fe_2和Co_2之间.     

Deep reduction behavior of iron oxide and its effect on direct CO oxidation

Reduction of metal oxide oxygen carrier has been attractive for direct CO oxidation and CO₂ separation. To investigate the reduction behaviors of iron oxide prepared by supporting Fe₂O₃ on γ-Al₂O₃ and its effect on CO oxidation, fluidized-bed combustion experiments, thermogravimetric analyzer (TGA) experiments, and density functional theory (DFT) calculations were carried out. Gas yield (γCO₂) increases significantly with the increase of temperature from 693 K to 1203 K, while carbon deposition decreases with the increase of temperature from 743 K to 1203 K, where temperature is a very important factor for CO oxidation by iron oxide. Further, it were quantitatively detected that the interaction between CO and Fe₂O₃, breakage of O-Fe bonds and formation of new C-O bonds, and effect of reduction degree were quantitatively detected. Based on adsorptions under different temperatures and reducing processes from Fe³⁺ into Fe²⁺, Fe⁺ and then into Fe, it was found that Fe²⁺ → Fe⁺ was the reaction-controlling step and the high oxidation state of iron is active for CO oxidation, where efficient partial reduction of Fe₂O₃ into FeO rather than complete reduction into iron may be more energy-saving for CO oxidation.     

Mechanism of heterogeneous mercury oxidation by HCl on V2O5(001) surface

The selective catalytic reduction (SCR) system for NO_X removal in coal-fired power plants has a promoting effect on the oxidation and removal of elemental mercury. In this study, basic mechanism of mercury oxidation by V₂O₅-based SCR catalyst is investigated via density functional theory method and the periodic slab models. Calculations are conducted to determine the adsorption energies and geometries of Hg⁰, HgCl, HgCl₂ and HCl on V₂O₅(001) surface, and to reveal the energy profile of oxidation reaction and the structures of relative transition states and intermediates. The results indicate that HCl can significantly promote Hg⁰ oxidation on V₂O₅(001) surface, by forming an intermediate HgCl-surface which is important for Hg⁰ oxidation. The Hg⁰ oxidation goes through Hg⁰ → HgCl → HgCl₂, and the two stages of the reaction follow Eley–Rideal mechanism and Langmuir-Hinshelwood mechanism, respectively. The formation of HgCl₂ is the rate-determining step due to its high energy barrier. Three detailed reaction pathways are obtained, and the related energy profiles and structures are analyzed in detail. The Hg⁰ oxidation reaction can take place through all three pathways even if differences exist in each other, while pathways I and II have relatively low energy barriers.     

Initial incorporation of sulfur into the Pd(1 1 1) surface: A theoretical study

Density functional theory is used to investigate the initial inclusion of sulfur into the subsurface interstitial sites of Pd(1 1 1) surface. Pure subsurface adsorption is found to be less energetically favorable than on-surface adsorption. The incorporation of sulfur into the metal becomes more favorable than continuous adsorption on the surface after a critical on-surface sulfur coverage. We find subsurface sulfur occupation to be energetically favorable after adsorption of more than half a monolayer on the surface. Occupation of subsurface sites induces a pronounced structural distortion of the Pd(1 1 1) surface. We find significant expansion of interplanar spacing between the uppermost surface metal layers and rearrangement of the S overlayer. The interplay between the energy cost due to structural distortion of Pd(1 1 1) and the energy gain due to bond formation for different structures is discussed.     

Density functional study of the reaction of O2 with a single site on the zigzag edge of graphene

The reaction between molecular oxygen and an isolated zigzag graphene edge has been studied using density functional theory at the B3LYP/6-31G(d) level of theory. The initial reaction forms a peroxide, ΔH = −135 kJ mol⁻¹. If the graphene edge is pre-oxidised, the dangling peroxy atom can (E_a = 91 kJ mol⁻¹) migrate across contiguous ketone groups until finding another vacant site and stabilizing as a ketone. However, if no further vacant sites are available, the peroxy oxygen has a number of other possibilities open to it, including desorption of an oxygen atom (E_a = 140 kJ mol⁻¹), migration via the basal plane to form a lactone (E_a = 147 kJ mol⁻¹), and direct interaction with an adjacent oxide to form the lactone or a carbonate (E_a = 146 kJ mol⁻¹). The combination of thermal energy and the heat released in the initial formation of the peroxy adduct is likely to be sufficient to overcome these secondary barriers at modest temperatures.Transfer of the dangling peroxy O to the basal plane produces an epoxide that is mobile on the basal surface (E_a = 40–80 kJ mol⁻¹) but that is transferred back to the edge upon coming into proximity of either a vacant edge site or ketone. The instability of the edge epoxide structure implies that it cannot play a significant role in carbon gasification through promoting the reactivity of ketones, contrary to earlier suggestions.The desorption of an oxygen atom creates a very active species capable of reacting with basal or edge sites as well as with oxygen complexes. The reaction of ketone + O has been reported to yield a five-membered ring + CO₂, leading to an overall stoichiometry which is consistent with the observed oxyreactivity of carbon surface oxides identified in isotopic labelling studies in which one O atom is gasified and the other forms a new surface oxide.