Phase transitions and magnetic-transport phenomena in the system La2/3Ba1/3(Mn1−x Cox)O3

A study is performed of the crystalline structure, magnetization, and magnetotransport properties of the system La_2/3Ba_1/3(Mn_1−x Co_x)O₃ with perovskite structure. It is shown that cubic solid solutions exist over the entire range of cobalt concentrations 0⩽x⩽1. Compositions with x⩽0.2 are ferromagnets with maximum resistance near T _C . Compositions with 0.2<x<0.4 manifest properties of inhomogeneous ferromagnets. Measurements of magnetic properties indicate the absence of long-range magnetic order in compositions with 0.5⩽x⩽0.9, which are probably spin glasses. The spontaneous magnetization of cobaltate (2μ _B per formula unit) corresponds to ferromagnetic ordering of the moments of the Co³⁺ and Co⁴⁺ ions found in the intermediate spin state. It is conjectured that the magnetoresistance consists of an extrinsic and an intrinsic contribution. The first arises as a result of intergrain transport of spin-polarized charge carriers, and the second, as a result of magnetic ordering near T _C . The magnetoresistance is essentially independent of the spontaneous magnetization and decreases abruptly as the cobalt concentration is increased with a corresponding transition from long-range to short-range magnetic order. Zh. éksp. Teor. Fiz. 116, 604–610 (August 1999)     

Effect of excess oxygen on the electrical and magnetic properties of La1 ? xAgxMnO3 (x = 0.05, 0.1, 0.2) at 77 K < T < 300 K

A study has been made of the magnetic and electrical properties of oxygen-enriched La_{1 − x} Ag _x MnO_3.1 manganites at 77 K < T < 300 K. The samples have been produced by the sol-gel technique. The study has revealed an increase of the Curie temperature and a shift of the maximum in magnetoresistance toward high temperatures.     

Magnetic, electrical, and crystallographic properties of thin La1−x SrxMnO3 films

A study is reported of the magnetic, electrical, and crystallographic properties of La_1−x Sr_xMnO₃ (0.15⩽x⩽0.23) epitaxial films grown on single-crystal substrates of (001)ZrO₂(Y₂O₃) having the fluorite structure and (001)LaAlO₃ having the perovskite structure. It was found that films with close compositions for x=0.15 and 0.16, grown on different substrates, have different properties, namely, the film on a fluorite substrate is semiconducting and has a coercive strength 30 times that of the film on a perovskite substrate; the temperature dependence of electrical resistance of the latter film has a maximum around the Curie point T _C and follows metallic behavior for T<T _C. These differences are explained as due to different structures of the films. The x=0.23 film on the perovskite substrate has been found to exhibit a combination of giant magnetoresistance at room temperature with a resistance of ≈300 Ω which is useful for applications. The maxima in resistance and absolute value of negative magnetoresistance are accounted for by the existence of two-phase magnetic states in these films. Fiz. Tverd. Tela (St. Petersburg) 40, 290–294 (February 1998)     

Atomic structure and transport and magnetic properties of the Sm1−x SrxMnO3 system

This is the first study of the temperature dependences of the atomic structure by neutron diffraction, as well as of the resistivity, differential magnetic susceptibility, and magnetoresistance of the ceramic system ¹⁵⁴Sm_1−x Sr_xMnO₃ (x∼0.16–0.4). Samples (x⩾0.3) having an initially orthorhombic structure transfer upon cooling from the insulating to the metallic state and exhibit giant magnetoresistance, which at liquid-helium temperature reaches as high as 90% in magnetic fields up to 30 kOe. At lower doping levels (x⩽0.25), the compound has monoclinic structure. The resistivity of such compounds in zero magnetic field displays insulating behavior upon lowering the temperature to 77 K. Fiz. Tverd. Tela (St. Petersburg) 40, 1271–1276 (July 1998)     

Magnetic transitions and magnetoresistance of -type () compounds

Magnetic transitions and magnetotransport properties of polycrystalline Tb_1−xGd_xMn₆Ge₆ (x=0.2–1.0) compounds have been investigated by magnetic property and resistivity measurements in an applied magnetic field up to 50 kOe. The cell parameter a,c and cell volume V of compounds (x=0.2–1.0) increase with an increasing Gd content. The compounds (x=0.2–1.0) show a rich variety of magnetic behavior, such as antiferromagnetic, ferrimagnetic and paramagnetic state with increasing temperature. Their Curie temperatures increase almost linearly with an increasing Gd content from 460 K for x=0.2 to 484 K for x=1.0. The compounds (x=0.2–1.0) display the field induced metamagnetic transitions, and the threshold fields first increase and then decrease with an increasing Gd content. The magnetoresistance curves of the Tb_0.4Gd_0.6Mn₆Ge₆ compounds in an applied magnetic field up to 50 kOe are presented and the magnetoresistance effects are related to the metamagnetic transitions.     

Phase transformations and magnetotransport properties of the Pr0.5Sr0.5Co1 ? xMnxO3 system

The structural, magnetic, and magnetotransport properties of Pr_0.5Sr_0.5Co_{1 − x} Mn _x O₃ (x < 0.65) perovskites are studied by magnetization and electrical conductivity measurements in magnetic fields up to 14 T and by neutron diffraction. In the manganese concentration range x < 0.5 and T = 300 K, the crystal structure is described by monoclinic space group I2/a; at x > 0.5, it is described by orthorhombic space group Imma. When the temperature decreases, a structural transformation without changing the symmetry takes place in all compounds. This transformation is caused by an active role of the inner shells of the praseodymium ion in chemical bond formation. The substitution of manganese for cobalt breaks a long-range ferromagnetic order near x ≈ 0.25, and a metal-dielectric transition occurs at x ≈ 0.15. The negative magnetoresistance is found to be maximal near a critical manganese concentration, where a long-range magnetic order is broken; it reaches 95% in a field of 14 T at T = 10 K for x = 0.2. An unusual dielectric magnetic state with a small spontaneous magnetic moment and a sharp transition into a paramagnetic state at T > 200 K is revealed in the concentration range 0.30 ≤ x ≤ 0.65 in spite of the absence of coherent magnetic neutron scattering. A model is proposed to explain the behavior of the magnetic properties in this phase.     

Colossal magnetoresistance of the Sm1−x SrxMnO3 system

The results of investigating the temperature dependence of the resistivity, the differential magnetic susceptibility, and the magnetoresistance of a partially substituted perovskite Sm_1−x Sr_xMnO₃ (x=0.16–0.4) are presented. Colossal intrinsic magnetoresistance, reaching 90% in an external magnetic field of 30 kOe, is discovered in the compound with x=0.30 at 77 K. Fiz. Tverd. Tela (St. Petersburg) 39, 1831–1832 (October 1997)     

Magnetoresistance of lightly doped TmBa2Cu3Ox crystals. Reorientation of the antiferromagnetic structure in a magnetic field

The magnetoresistance of lightly doped TmBa₂Cu₃O_x single crystals is investigated in the temperature range 4.2–300 K for magnetic fields up to 12 T. For the antiferromagnetic sample (x=6.3), when the current and field lie in the ab plane, the magnetoresistance is the sum of an anisotropic and a background component. The existence of the anisotropic component is attributed to the restructuring of the antiferromagnetic domain structure in a magnetic field. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 5, 350–355 (10 September 1999)     

Galvanomagnetic properties of Hg1−x MnxTe1−y Sey semimagnetic semiconductors

The galvanomagnetic properties of single crystals of the semimagnetic semiconductors Hg_1−x Mn_xTe_1−y Se_y with 0.01<y<0.1 and x=0.05 and 0.14 in the temperature range 4.2–300 K are investigated. The features of the temperature dependence of the Hall coefficient R _H and the complicated behavior of R _H in a magnetic field are attributed quantitatively to the existence of three groups of current carriers, viz., electrons and two types of holes, for which the temperature dependences of the densities and mobilities are obtained. A transition from p-type to n-type conductivity is observed as the Se content is increased, and the negative magnetoresistance simultaneously gives way to positive magnetoresistance. Zh. éksp. Teor. Fiz. 112, 1809–1815 (November 1997)     

Galvanomagnetic properties of the Al1−x Six nonequilibrium substitutional solid solutions

Galvanomagnetic characteristics of the A_1−x Si_x solid solutions (x<12 at. %) have been studied within a broad range of temperatures (1.8–290 K) and magnetic fields (up to 15 T). An anomaly in the concentration dependence of the Hall coefficient R _H (x,T=290 K) has been revealed near the boundary of absolute instability (x<8.5 at. %) of compounds in the Al_1−x Si_x series. The variation of the Hall coefficient and of the magnetoresistance in the A_1−x Si_x series at low (T<77 K) temperatures is analyzed within models taking into account the anisotropy in conduction-band electron scattering. Fiz. Tverd. Tela (St. Petersburg) 41, 3–10 (January 1999)     

Studies on the valence electronic structure of Fe and Ni in Fe x Ni1−x alloys

K _β-to-K _α X-ray intensity ratios of Fe and Ni in pure metals and in Fe _x Ni_1−x alloys (x=0.20, 0.50, 0.58) exhibiting similar crystalline structure have been measured following excitation by 59.54 keV γ-rays from a ²⁴¹Am point source, to understand as to why the properties of permalloy Fe_0.2Ni_0.8 is distinct from other alloy compositions. It is observed that the valence electronic structure of Fe_0.2Ni_0.8 alloy is totally different from other alloys which may be attributed to its special magnetic properties.     

Magnetic breakdown and quantum magnetotransport with a constant pseudospin under tilted magnetic fields in an n -In x Ga1? x As/GaAs double quantum well

A procedure is proposed for precise scanning of the (B _⊥, B _‖) plane between the magnetic field projections that are perpendicular and parallel to (quasi-)two-dimensional layers when measuring their longitudinal and Hall magnetoresistances. Investigations of a n-In _x Ga_1−x As/GaAs double quantum well (x ≈ 0.2) performed using this procedure make it possible to reveal a number of the features of the magnetoresistance, which appear due to a complex energy spectrum of the double quantum well in a parallel field, and to separate them from the structures associated with the magnetic breakdown. The trajectories representing the features of the magnetoresistance in the (B _⊥, B _‖) plane are described by the semiclassical calculations of the quantization of the energy spectrum of the double quantum well under the action of the perpendicular field component. The structures appearing due to the magnetic breakdown are amplified with increasing the total magnetic field magnitude and, in the samples with low mobility, completely suppress the features caused by the motion of an electron with a constant pseudospin component. The peaks corresponding to the magnetic breakdown are split in a strong parallel field due to the spin splitting of the Landau levels. These splittings correspond to the effective Landé factor |g*| ≈ 3. Original Russian Text ? M.V. Yakunin, S.M. Podgornykh, V.N. Neverov, 2007, published in Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 132, No. 1, pp. 241–249.     

Magnetoresistance anomalies in MnAs−xPx compounds at low temperatures

A large step in the negative magnetoresistance of MnAs_1?xP_x crystals with 0.06 < x < 0.12 is interpreted in terms of a transition to a low-temperature state which shows magnetic long-range order together with a new kind of spin-flip scattering.     

Specific features of the magnetoresistance in multilayer systems of magnetic nanoislands in weak magnetic fields

New magnetic structures such as multilayer systems of magnetic nanoislands being alternating layers of nanoislands of various magnets have been proposed. The electric, magnetic, and magnetooptical properties of the systems have been studied. The magnetoresistance of ～2% related to the anisotropic effect has been revealed. In multilayer structures of magnetic nanoislands, a unidirectional axis of predominant magnetization has been found, which changes its orientation depending on the structure parameters. The magnetic field required to reorient the axis in the opposite direction has been estimated to be 2 kOe < H _A < 20 kOe. The periodic multilayer structures of magnetic nanoislands are very sensitive to hyperweak magnetic fields (to 10^?6 Oe).     

Theoretical study of the magnetoresistance under electric field in III–V diluted magnetic semiconductor

In this paper we study the magnetoresistance and the coupling energy in heterostructures formed by two magnetic layers Ga_1−xMn_xAs separated by a nonmagnetic spacer GaAs under an electric field and develop a mean-field theory of carrier in diluted magnetic semiconductor. Our main result indicates that magnetoresistance can be dramatically suppressed by an external electric field.     

Magnetic and magneto-transport properties of (Ba0.8Sr0.2)2−xNdxFeMoO6

The variation in structural, magnetic and magneto-transport properties of the double perovskite system (Ba_0.8Sr_0.2)_2?xNd_xFeMoO₆ {0.0<X<0.5} induced by Nd³⁺ doping (electron doping) has been studied and compared. The samples were prepared by standard solid state reaction method in a reducing atmosphere. The parent compound showed a saturation magnetic moment value of 3.75 μ_B/f.u. at an applied field of 0.5 T and a change in magnetoresistance value up to 26% (77 K, 0.8 T). The Rietveld refinement of the X-ray diffraction data showed a continuous decrease in lattice parameters and Fe–Mo ordering with increasing Nd³⁺ doping. The Curie temperature was found to increase with Nd³⁺ doping (3 K per % of Nd) while the saturation magnetic moment values and magnetoresistance values were found to decrease. The observed variations in magnetic and magneto-transport properties of the system are explained on the basis of increasing antisite disorder defects and band filling effects induced by electron doping. We have observed the dominant role of band filling in determining the low field magnetoresistance of these systems.     

Enhancement of magnetoresistances at room temperature in YSZ doping La0.67Sr0.33MnO3 system

The temperature dependence of the resistance of composite samples (1−x)La_0.67Sr_0.33MnO₃+xYSZ with different YSZ doping level x was investigated at magnetic fields 0-3 T, where YSZ represents yttria-stabilized zirconia. Results show that the YSZ dopant does not only adjust the metal-insulator transition temperature, but also increases the magnetoresistance effect. With increase of YSZ doping level for the range of x<2%, the metal-insulator transition temperature values T_P of the composites decrease, but T_P increases with increase of x further for the range of x>2%. Meanwhile, in the YSZ-doped composites, a broad metal-insulator transition temperature region was found at zero and low magnetic field, which results in an obvious enhanced magnetoresistance in the temperature range 10-350 K. Specially, a larger magnetoresistance value was observed at room temperature at 3 T, which is encouraging with regard to the potential application of magnetoresistance materials.     

Conductivity jumps and low-temperature magnetoresistance in the new semiconducting perovskites La1− x BixMnO3+δ

Abrupt jumps are observed on the temperature dependences of the electrical conductivity of La_{1− x} Bi_xMnO_3+δ (0.1<x<0.7) and La_0.3Bi_0.7Na_0.1MnO_3+δ ceramics. The temperatures at which the jumps take place can be reduced by several degrees by applying an external magnetic field of 15 kOe. It can be seen from the magnetization data that the poorly conducting low-temperature phase is not antiferromagnetic (it is likely ferromagnetic) and hence the real-space charge ordering mechanism is not sufficient for explaining the experimental results. An interpretation in terms of magnetic phase nonuniformity is proposed. All the samples studied exhibit high low-temperature magnetoresistance. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 4, 250–253 (25 August 1996) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Magnetic studies on electrodeposited Cu1−xCox alloy films

Six Cu_1−xCo_x alloy films were prepared by an electrodeposition technique. The compositions of the films were determined to be , 0.13, 0.17, 0.19, 0.21, 0.26 by an atomic absorption spectrophotometer. The crystal structure is FCC-Cu for all films but a shift in the diffraction lines is observed with increasing Co content. The giant magnetoresistance effect was determined in some of the films below 200 K. Magnetisation curves showed no saturation at 10 kOe and the curves of the samples which have a large magnetoresistance value are inclined more than the curves of the other low magnetoresistance samples. This may be due to the degree of magnetic moment distribution in these samples.     

Magnetoresistance and magnetic ordering in praseodymium and neodymium hexaborides

The magnetoresistance Δρ/ρ of single-crystal samples of praseodymium and neodymium hexaborides (PrB₆ and NdB₆) has been measured at temperatures ranging from 2 to 20 K in a magnetic field of up to 80 kOe. The results obtained have revealed a crossover of the regime from a small negative magnetoresistance in the paramagnetic state to a large positive magnetoresistive effect in magnetically ordered phases of the PrB₆ and NdB₆ compounds. An analysis of the dependences Δρ(H)/ρ has made it possible to separate three contributions to the magnetoresistance for the compounds under investigation. In addition to the main negative contribution, which is quadratic in the magnetic field (−Δρ/ρ ∝ H ²), a linear positive contribution (Δρ/ρ ∝ H) and a nonlinear ferromagnetic contribution have been found. Upon transition to a magnetically ordered state, the linear positive component in the magnetoresistance of the PrB₆ and NdB₆ compounds becomes dominant, whereas the quadratic contribution to the negative magnetoresistance is completely suppressed in the commensurate magnetic phase of these compounds. The presence of several components in the magnetoresistance has been explained by assuming that, in the antiferromagnetic phases of PrB₆ and NdB₆, ferromagnetic nanoregions (ferrons) are formed in the 5d band in the vicinity of the rareearth ions. The origin of the quadratic contribution to the negative magnetoresistance is interpreted in terms of the Yosida model, which takes into account scattering of conduction electrons by localized magnetic moments of rare-earth ions. Within the approach used, the local magnetic susceptibility χ_loc has been estimated. It has been demonstrated that, in the temperature range T _N < T < 20 K, the behavior of the local magnetic susceptibility χ_loc for the compounds under investigation can be described with good accuracy by the Curie-Weiss dependence χ_loc ∝ (T − Θ _p )⁻¹.