Berkovich nanoindentation and deformation mechanisms in GaN thin films

The deformation mechanisms of GaN thin films obtained by metal-organic chemical vapor deposition (MOCVD) method were studied using nanoindentation with a Berkovich diamond indenter, micro-Raman spectroscopy and the cross-sectional transmission electron microscopy (XTEM) techniques. Due to the sharpness of the tip of Berkovich indenter, the nanoindentation-induced deformation behaviors can be investigated at relatively lower load and, hence, may cover wider range of deformation-related phenomena over the same loading range. The load-displacement curves show the multiple “pop-ins” during nanoindentation loading. No evidence of nanoindentation-induced phase transformation and cracking patterns were found up to the maximum load of 300 mN, as revealed from the micro-Raman spectra and the scanning electron microscopy (SEM) observations within the mechanically deformed regions. In addition, XTEM observation performed near the cross-section of the indented area revealed that the primary deformation mechanism in GaN thin film is via propagation of dislocations on both basal and pyramidal planes. The continuous stiffness measurement (CSM) technique was used to determine the hardness and Young's modulus of GaN thin films. In addition, analysis of the load-displacement data reveals that the values of hardness and Young's modulus of GaN thin films are 19 ± 1 and 286 ± 25 GPa, respectively.     

Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition.     

Crystallographic and luminescent characterizations of blue-emitting BaAl2S4 : Eu electroluminescent thin films

We characterized the crystallization and luminescence of blue-emitting BaAl₂S₄ : Eu electroluminescent thin films, prepared using switching electron-beam evaporation with two targets. From the photoluminescence intensity and decay profile of the activated Eu²⁺ ions in the BaAl₂S₄ : Eu, we found that the optimum annealing conditions for preparing highly luminescent thin films are a temperature of around 900°C and an annealing time of 2 min. We analyzed the crystalline properties using cross-sectional transmission electron microscope images. Evaluation of the cathodoluminescence spectra in the cross-sections showed that the BaAl₂S₄ : Eu emitting layer was luminously inhomogeneous on the depth of the layer and that the main luminescent area was near the surface of the emitting layer. We discuss here the relationship between the crystalline and luminescent properties.     

Dynamic scanning force microscopy study of self-assembled DNA-protein nanostructures

Self-assembled oligomeric nanostructures consisting of bisbiotinylated DNA fragments connected by the protein streptavidin (STV) are studied by dynamic scanning force microscopy (SFM) operating in air. A comparison of the images taken in repulsive and attractive regimes is systematically made on DNA and STV structures. Stable and reproducible SFM images are obtained in the attractive regime by using a special feedback circuit, called Q-control. On the other hand, when SFM is operating in the repulsive regime, deformation of the structures that reduce the resolution and the image quality are clearly observable. The heights of both DNA and STV have been measured as a function of the tip/molecule interaction forces. This study offers the possibility to suggest a different mechanical behavior of DNA with respect to STV. Received: 24 July 2001 / Accepted: 3 December 2001 / Published online: 4 March 2002     

How the masters in Umbria,Italy, generated and used nanoparticles in art fabrication during the Renaissance period

Lustre was one of the most sophisticated techniques for the decoration of majolicas during the Renaissance period. Lustre consists of a thin metallic film containing silver, copper and other substances like iron oxide and cinnabar applied in a reducing atmosphere on a previously glazed ceramic. In this way, beautiful iridescent reflections of different colours (in particular gold and ruby-red) are obtained. The characterisation and the study of lustre-decorated majolicas is of great interest for archaeologists, but also offers possibilities for producing pottery with outstanding decoration today, following ancient examples, since nowadays Italian artisans are interested in the reproduction of the ancient recipes and procedures. Moreover, it can even suggest new procedures for obtaining uniform thin metallic films for technological applications. A study has been carried out on ancient lustre layers using numerous different analytical techniques such as XRD, SEM–EDX, TEM–EDX–SAED, ETAAS, ICP–OES, UV–vis reflectance spectroscopy and SAXS. Lustre films were shown to be formed by copper and silver clusters of nanometric dimension. The colour and the properties of the lustre films depend on the elemental composition of the impasto applied to the ceramic surface as well as on other factors like the metallic nanocluster dimension, the firing conditions, the underlying glaze composition and the procedure used. Received: 12 August 2002 / Accepted: 14 August 2002 / Published online: 8 January 2003 RID="*" ID="*"Corresponding author. Fax: +39-6/9067-2445, E-mail: pad@mlib.cnr.it     

Compositional contrast in AlxGa1−xN/GaN heterostructures using scanning spreading resistance microscopy

Scanning spreading resistance microscopy has found extensive use as a dopant-profiling technique for silicon-based devices, and to a lesser extent for some III-V materials. Here we demonstrate its efficacy for wide bandgap nitrides and, in particular, show that it may be used to differentiate between layers of different Al-content in an Al_xGa_1−xN/GaN heterostructure. A monotonic increase in resistance signal with increasing Al-content is demonstrated, under optimal imaging conditions. The variation in measured resistance with applied bias is shown to be dependent on the aluminium content, and this is discussed, along with other issues, in the context of potential quantification of unknown samples. The procedure for forming an optimal image is different from that for silicon, in terms of contact forces and applied biases.     

In situ transmission electron microscopy study of the nucleation and grain growth of Ge2Sb2Te5 thin films

The nucleation and grain growth of the Ge₂Sb₂Te₅ (GST) thin films were studied using high voltage electron microscope operated at 1250 kV. As a result, we have found that 2 nm-sized nucleus forms as a cluster which atoms are arranged regularly at the stage of nucleation prior to the formation of grains having crystal structure. The high-resolution transmission electron microscopy study and fast-Fourier transformations revealed that coexistence of face-centered-cubic (FCC) and hexagonal structure occurs, and formation of twin defect is found in the hexagonal structure during the grain growth as the annealing temperature is increased. GST grain having the hexagonal structure grow from the surface, and the growth proceeded perpendicular to the [0 0 0 1], namely the path parallel to the (0 0 0 1) plane. Consequently, grain growth to a large-scale result in a lengthened shape.     

Atomic structure of the non‐polar GaN($ \bar 2 $110) surface by cross‐sectional scanning tunneling microscopy

The ( 110) plane of gallium nitride, exposed by cleaving a GaN single crystal under ultra‐high vacuum conditions, has been atomically resolved for the first time, using cross‐sectional scanning tunneling microscopy. The spatial period length supports a (1 × 1) unit mesh size, i.e., the absence of a reconstruction. The contrast observed in the experimental data is well explained by the atomic arrangement expected for a truncated‐bulk structure. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Nanoindentation and nanoscratch behaviors of Ag/Ni multilayers

The hardness, elastic modulus and scratch behaviors of Ag/Ni mulitlayers deposited by evaporation have been carried out by nanoindentation and nanoscratch. It has been found that the hardness (H) increases, while the modulus (E) decreases, that is to say an increase of H/E as the periodicity decreases. Many mechanisms are included in nanoscratch, including initial elastic contact, plowing and fracture stage, in each multilayer. Coefficient of friction during plowing decreases with the decrease of the periodicity, which can be ascribed to decreasing material pile-up due to the increase of H/E. Elastic recovery after scratching also increases as the periodicity decreases because of the increase of H/E, which leads to improved wear resistance. The fracture stage will be postponed with decreasing periodicity, which also leads to better wear behavior.     

Decomposition of thin titanium deuteride films; thermal desorption kinetics studies combined with microstructure analysis

The thermal evolution of deuterium from thin titanium films, prepared under UHV conditions and deuterated in situ at room temperature, has been studied by means of thermal desorption mass spectrometry (TDMS) and a combination of scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The observed Ti film thickness dependent morphology was found to play a crucial role in the titanium deuteride (TiD_y) film formation and its decomposition at elevated temperatures. TDMS heating induced decomposition of fine-grained thin Ti films, of 10-20 nm thickness, proceeds at low temperature (maximum peak temperature T_m about 500 K) and its kinetics is dominated by a low energy desorption (E_D = 0.61 eV) of deuterium from surface and subsurface areas of the Ti film. The origin of this process is discussed as an intermediate decomposition state towards recombinative desorption of molecular deuterium. The TiD_y bulk phase decomposition becomes dominant in the kinetics of deuterium evolution from thicker TiD_y films. The dominant TDMS peak at approx. T_m = 670 K, attributed to this process, is characterized by E_D = 1.49 eV.     

Auger electron spectroscopy of Au/NiOx contacts on p-GaN annealed in N2 and O2 + N2 ambients

We have designed a promising contact scheme to p-GaN. Au/NiO_x layers with a low concentration of O in NiO_x are deposited on p-GaN by reactive dc magnetron sputtering and annealed in N₂ and in a mixture of O₂ + N₂ to produce low resistivity ohmic contacts. Annealing has been studied of NiO_x layers with various contents of oxygen upon the electrical properties of Au/NiO_x/p-GaN. It has been found that the Au/NiO_x/p-GaN structure with a low content of oxygen in NiO_x layer provides a low resistivity ohmic contact even after subsequent annealing in N₂ or O₂ + N₂ ambient at 500 °C for 2 min.Auger depth profiles and transmission electron microscopy (TEM) micrographs reveal that while annealing in O₂ + N₂ ambient results in reconstruction of the initial deposited Au/NiO_x/p-GaN contact structure into a Au/p-NiO/p-GaN structure, annealing in N₂ brings about reconstruction into Au/p-NiO/p-GaN and Ni/p-NiO/p-GaN structures. Hence, in both cases, after annealing in N₂ as well as in O₂ + N₂ ambient, the ohmic properties of the contacts are determined by creation of a thin oxide layer (p-NiO) on the metal/p-GaN interface. Higher contact resistivities in the samples annealed in O₂ + N₂ ambient are most likely caused by a smaller effective area of the contact due to creation of voids.     

Influence of surface energy and relative humidity on AFM nanomechanical contact stiffness

The effects of surface functionality and relative humidity (RH) on nanomechanical contact stiffness were investigated using atomic force acoustic microscopy (AFAM), a contact scanned-probe microscopy (SPM) technique. Self-assembled monolayers (SAMs) with controlled surface energy were studied systematically in a controlled-humidity chamber. AFAM amplitude images of a micropatterned, graded-surface-energy SAM sample revealed that image contrast depended on both ambient humidity and surface energy. Quantitative AFAM point measurements indicated that the contact stiffness remained roughly constant for the hydrophobic SAM but increased monotonically for the hydrophilic SAM. To correct for this unphysical behavior, a viscoelastic damping term representing capillary forces between the tip and the SAM was added to the data analysis model. The contact stiffness calculated with this revised model remained constant with RH, while the damping term increased strongly with RH for the hydrophilic SAM. The observed behavior is consistent with previous studies of surface energy and RH behavior using AFM pull-off forces. Our results show that surface and environmental conditions can influence accurate measurements of nanomechanical properties with SPM methods such as AFAM.     

Effects of deposition temperature and thickness on the structural properties of thermal evaporated bismuth thin films

Bismuth (Bi) thin films of different thicknesses were deposited onto Si(1 0 0) substrate at various substrate temperatures by thermal evaporation technique. Influences of thickness and deposition temperature on the film morphologies, microstructure, and topographies were investigated. A columnar growth of hexahedron-like grains with bimodal particle size distribution was observed at high deposition temperature. The columnar growth and the presence of large grains induce the Bi films to have large surface roughness as evidenced by atomic force microscopy (AFM). The dependence of the crystalline orientation on the substrate temperature was analyzed by X-ray diffraction (XRD), which shows that the Bi films have completely randomly oriented polycrystalline structure with a rhombohedral phase at high deposition temperature (200 °C) and were strongly textured with preferred orientation at low deposition temperatures (30 and 100 °C).     

Formation of V2O3 nanocrystals by thermal reduction of V2O5 thin films

We report the formation of homogeneous and stable V₂O₃ nanocrystals, directly from V₂O₅ thin films, at 600 °C, as observed by using in situ electron microscopy experiments. Thermally-induced reduction of V₂O₅ thin films in vacuum is remarkably different when compared to reduction of V₂O₅ single crystals and results in the formation of nanophase V₂O₃. Thermally grown V₂O₃ nanocrystals exhibit hexagon or square shape and are stable at higher temperature as well as room temperature. The formation of stable nanocrystals through the reduction process in a non-chemical environment (vacuum) could provide a basis for understanding the complex processes of vanadium oxide phase transitions and for controlling the chemical processes to produce oxide nanocrystals.     

Room temperature chemical synthesis of lead selenide thin films with preferred orientation

Room temperature chemical synthesis of PbSe thin films was carried out from aqueous ammoniacal solution using Pb(CH₃COO)₂ as Pb²⁺ and Na₂SeSO₃ as Se²⁻ ion sources. The films were characterized by a various techniques including, X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HR-TEM), selected area electron diffraction (SAED), Fast Fourier transform (FFT) and UV-vis-NIR techniques. The study revealed that the PbSe thin film consists of preferentially oriented nanocubes with energy band gap of 0.5 eV.     

Environmental transmission electron microscopy observations of the growth of carbon nanotubes under nanotube-nanotube and nanotube-substrate interactions

The growth process of carbon nanotubes (CNTs) under CNT-CNT and CNT-substrate interactions has been observed directly by environmental transmission electron microscopy. Even a free standing CNT occasionally swings during the growth until it touches the substrate. In addition, we show that the growth direction of CNTs changes due to the interaction between CNTs.     

Electron beam induced structural changes in Bi2Sr2CaCu2O8+x studied by cathodoluminescence microscopy and secondary electron emission

2 Sr₂CaCu₂O_8+x superconducting ceramics have been irradiated in the scanning electron microscope (SEM), and the irradiation-induced effects investigated by cathodoluminescence (CL), secondary electron emission (SEE) and X-ray microanalysis. Electron beam irradiation causes a slight Bi depletion and an inhomogeneous Ca distribution. A higher CL intensity emission is found in the irradiated areas, where besides an enhancement of the oxygen content related 2. 4 eV band, another CL bands probably related to new non-superconducting phases induced by irradiation can be observed. SEE yield measurements allow to detect an oxygen depleted region surrounding the irradiated areas. X-ray microanalysis shows that this intermediate region retains the cationic composition of the unaffected material. CL spectra from bright zones inside the same area also show a dominant 2. 4 eV emission band, which supports its relation with oxygen deficiency or rearrangement in high- superconductors. Received: 30 July 1996/Accepted: 8 October 1996     

Molecular dynamics study of effects of radius and defect on oscillatory behaviors of C60-nanotube oscillators

Using the micro-canonical ensemble, we investigate the oscillatory behaviors of some selected C60-nanotube oscillators by the classical molecular dynamics (MD) simulations method. The second-generation empirical bond-order potential and the van der Waals potential are used to describe bonding and nonbonding atomic interactions, respectively. In the process of simulation, two factors of the radius and vacancy defect of single-walled carbon nanotubes (SWCNTs) are discussed to investigate their effects on the oscillatory behaviors of C60-nanotube oscillators. The simulation results show that the energy dissipation of the C60-nanotube oscillator is sensitive to the radius and vacancy defect, and that the effect of the vacancy defect on the oscillatory behaviors of oscillator depends obviously on the radius of the outer tube. It is found that a single vacancy defect placed on the outer tube of the C60-(17,0) nanotube oscillator can significantly reduce energy dissipation. For C60-(18,0), C60-(19,0) and C60-(11,11) nanotube oscillators, however, the results show that an oscillator containing a vacancy defect is less stable than the one without defect.     

Atomic force microscopy study of thermal stability of silver selenide thin films grown on silicon

Silver selenide thin films were grown on silicon substrates by the solid-state reaction of sequentially deposited Se and Ag films of suitable thickness. Transmission electron microscopy and particle-induced X-ray emission studies of the as-deposited films showed the formation of single phase polycrystalline silver selenide from the reaction of Ag and Se films. Atomic force microscopy images of the as-deposited and films annealed at different temperatures in argon showed the film morphology to evolve into an agglomerated state with annealing temperature. The results indicate that when annealed above 473 K, silver selenide films on silicon become unstable and agglomerate through holes generated at grain boundaries.