Near surface composition of some alloys by X-ray photoelectron spectroscopy

Chemical compositions of the alloys of CuNi (Cu_0.10Ni_0.90, Cu_0.30Ni_0.70, Cu_0.70Ni_0.30) and BiSb (Bi_0.80Sb_0.20, Bi_0.64Sb_0.34, Bi_0.55Sb_0.45) are determined by X-ray photoelectron spectroscopy. The stoichiometries are determined and are compared with the bulk compositions. Possible sources of systematic errors contributing to the results are discussed. Errors arising out of preferential etching in these alloys have been investigated. It has been inferred from such studies that the preferential etching does not enrich the surface composition with a particular component for the two systems reported here. Quantitative results of CuNi system indicate that the surface regions of the Cu_0.70Ni_0.30 alloy is Cu-rich, although no such evidence is observed in case of BiSb system.     

X射线光电子能谱

X射线光电子能谱（X-ray photoelectron spectroscopy，XPS）技术也被称作用于化学分析的电子能谱（electron spectroscopy for chemical analysis，ESCA）．XPS属表面分析法，它可以给出固体样品表面所含的元素种类、化学组成以及有关的电子结构重要信息，在各种固体材料的基础研究和实际应用中起着重要的作用．文章简要介绍了XPS仪器的工作原理和分析方法，并给出了XPS在科学研究工作中的应用实例．     

X射线光电子能谱

X射线光电子能谱（X-ray photoelectron spectroscopy, XPS）技术也被称作用于化学分析的电子能谱（electron spectroscopy for chemical analysis,ESCA）.XPS属表面分析法,它可以给出固体样品表面所含的元素种类、化学组成以及有关的电子结构重要信息,在各种固体材料的基础研究和实际应用中起着重要的作用.文章简要介绍了XPS仪器的工作原理和分析方法,并给出了XPS在科学研究工作中的应用实例.     

Surface analysis for LiBq4 growing on ITO and CuPc film using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS)

We have investigated the morphology and surface electron states of LiBq₄ deposited on ITO and CuPc/ITO, using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The AFM observations indicate that LiBq₄ can form a much more uniform film on CuPc than that on ITO. Furthermore, X-ray photoelectron spectroscopy (XPS) is utilized to further demonstrate the AFM results. From the analysis of XPS, we found that LiBq₄ molecules have poor thermal stability, they are seriously oxidized during depositing; but when a CuPc layer is inserted between LiBq₄ and ITO film, the oxidation and surface contamination of LiBq₄ are significantly reduced. It is then concluded that the introduction of a CuPc buffer layer under the LiBq₄ film can improve the film quality of LiBq₄.The XPS results also testified the fact that no coordination bonds between N atoms and B atoms are formed in LiBq₄ molecules, which make LiBq₄ to be potential blue organic light-emitting material.     

沉积态铀薄膜表面氧化的X射线光电子能谱

含铀(U)薄膜在激光惯性约束聚变的实验研究中有重要的用途.研究其在不同气氛下的氧化性能可以为微靶制备、储存及物理实验提供关键的实验数据.通过超高真空磁控溅射技术制备了纯U薄膜及金-铀(Au-U)复合平面膜,将其在大气、高纯氩(Ar)气及超高真空度环境中暴露一段时间后,利用X射线光电子能谱仪结合Ar~+束深度剖析技术考察U层中氧(O)元素分布及价态,分析氧化产物及机理.结果显示,初始状态的U薄膜中未检测到O的存在.Au-U复合薄膜中的微观缺陷减弱了Au防护层的屏蔽效果,使其在3周左右时间内严重氧化,产物为U表面致密的氧化膜及缺陷周围的点状腐蚀物,主要成分均为二氧化铀(UO_2).在高纯Ar气中纯U薄膜仅暴露6 h后表面即被严重氧化,生成厚度不均匀的UO_2.在超高真空度环境下保存12 h后,纯U薄膜表面也发生明显氧化,生成厚度不足1 nm的UO_2.Ar~+束对铀氧化物的刻蚀会因择优溅射效应而使UO_2被还原成非化学计量的UO_(2-x),但这种效应受O含量的影响.     

Surface cleaning and preparation in AlGaN/GaN-based HEMT processing as assessed by X-ray photoelectron spectroscopy

The chemical composition of the AlGaN/GaN surface during typical process steps in transistor fabrication was studied using X-ray photoelectron spectroscopy (XPS). The steps studied included organic solvent cleaning, 1:1 HCl:H₂O dip, buffered oxide etch dip, oxygen plasma descum and rapid thermal annealing (RTA). The surface composition was calculated after correction for the interference of the Ga Auger lines in the N 1s portion of the spectra. The buffered oxide etched (BOE) surface showed a greater tendency for Al (compared to Ga) to be oxidized in the surface, under a layer of adventitious carbon. Three different treatments were found to yield a combination of low C and O levels in the surface. Both plasma cleaning and RTA were highly effective at reducing the carbon contamination of the surface, but did increase the oxygen levels. The RTA treated surface was found to have low levels of oxygen incorporation to a depth of 2-6 nm.     

低速高电荷态重离子辐照的GaN晶体表面X射线光电子能谱研究

利用低速高电荷态Xeq+和Pbq+离子对在蓝宝石衬底上生长的GaN晶体膜样品进行辐照,并利用X射线光电子能谱(XPS)对样品表面化学组成和元素化合态进行了分析.结果表明,高电荷态离子对样品表面有显著的刻蚀作用;经高电荷态离子辐照的GaN样品表面氮元素贫乏而镓元素富集;随着入射离子剂量和所携带电荷数的增大,Ga—Ga键相对含量增大;辐照后,GaN样品中Ga—Ga键对应的Ga3d5/2电子的束缚能偏小,晶格损伤使内层轨道电子束缚能向低端方向偏移.     

Repeatable intensity calibration of an X-ray photoelectron spectrometer

Ten years ago, NPL developed an infrastructure for calibrating the intensity response functions of electron spectrometers for Auger electron and for X-ray photoelectron spectroscopies. Two software systems were developed: one for Auger electron spectrometers or for Auger electron and X-ray photoelectron spectrometers combined, and one for X-ray photoelectron spectrometers on their own; the latter being applied if no suitable electron gun is available. The system for Auger electron and X-ray photoelectron spectrometers combined has been used regularly to calibrate the Metrology Spectrometer II at NPL and experience shows that this gives an instrumental intensity consistency of 0.4% over 10 years. Evaluations have not previously been reported at this level. The system for Auger electron and X-ray photoelectron spectrometers combined is used here in preference to the system solely for X-ray photoelectron spectrometers since it is more robust to the sample condition and can be used over a wider energy range. These issues, and how observed variations in the instrument intensity response may arise, are explained.     

PTCDA/ITO表面和界面的X射线光电子能谱分析

利用X射线光电子能谱对PTCDA/p-Si有机/无机光电探测器中PTCDA/ITO表面和界面进行了测试分析。结果表明,苝环上的C原子的结合能为284.6 eV,酸酐中的C原子的结合能为288.7 eV,并存在来源于ITO膜中的氧对C原子的氧化现象,界面处C(1s)谱中较高结合能峰消失,且峰值向低结合能发生化学位移;CO键中O原子的结合能为531.5 eV,C—O—C键中的O原子的结合能为533.4 eV。     

Surface properties of Hafnium diboride(0 0 0 1) as determined by X-ray photoelectron spectroscopy and scanning tunneling microscopy

The surface structure and properties of the HfB₂(0 0 0 1) (Hafnium diboride, HfB₂) surface have been investigated with X-ray photoelectron spectroscopy, low energy electron diffraction (LEED), and scanning tunneling microscopy (STM). Annealing temperatures above 1900°C produce a sharp (1×1) LEED pattern, which corresponds to STM images showing flat (0 0 0 1) terraces with a very low contamination level separated by steps 3.4 Å in height, corresponding to the separation of adjacent Hf planes in the HfB₂ bulk structure. For lower annealing temperatures, extra p(2×2) spots were observed with LEED, which correspond to intermediate terraces of a p(2×1) missing row structure as observed with STM.     

Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy

X-ray photoelectron spectroscopy was used to measure the valence-band offset (VBO) of the NiO/ZnO heterojunction grown on quartz substrate by radio frequency (RF) magnetron sputtering. Core levels of Ni 2p and Zn 2p were used to align the VBO of p-NiO/n-ZnO heterojunction. The valence-band offset (ΔEV) is determined to be 1.47 eV. According to the band gap of 3.7 eV for NiO and 3.37 eV for ZnO, the conduction-band offset (ΔEC) in the structure was calculated to be 1.8 eV, and it has a type-II band alignment.     

CuPc/ITO结构的表面和界面电子态的XPS研究

覆盖有Indium tin oxide(ITO)膜的透明导电玻璃广泛地用作有机发光器件 (OLEDs)的空穴注入电极 ,但是ITO膜的功函数通常与空穴传输材料的最高被占据分子轨道 (HOMO)不匹配。铜酞菁 (CuPc)作为缓冲层可以提高空穴从ITO向空穴传输材料的注入效率。对CuPc ITO样品的XPS表面分析表明 ,在CuPc分子中 ,铜原子显 2价 ,通过配位键和氮原子相互作用。CuPc分子中有两类碳原子 :8个C原子与 2个N原子成键 ;其余 2 4个C原子具有芳香烃性质。N原子也处在两种化学环境中 :有 4个N原子只与 2个C原子形成CNC键 ;另外 4个N原子不仅与 2个C原子成键 ,还通过配位键与Cu原子成键。用氩离子束对样品表面进行了溅射剥蚀 ,当溅射时间分别为 2 ,5 ,10min时进行XPS采谱分析 ,结果表明 ,随着氩离子束溅射时间增长 ,C 1s,N 1s峰变弱 ,Cu 2p ,O 1s,In 3d,Sn 3d峰增强 ,C 1s,N 1s,O 1s,In 3d和Sn 3d峰都向高束缚能或低束缚能方向移动 ,但它们的情况却不相同。     

Multiplet splitting patterns exhibited by the first row transition metal oxides in X-ray photoelectron spectroscopy

High resolution photoelectron spectra from transition metal ions in TiO₂, V₂O₅, VO₂, V₂O₃, MnO, Mn₂O₃, MnO₂, Cr₂O₃, FeO, CoO, NiO, CuO, Cu₂O, FeSrO₃, and Cu doped CaTiO₃ were re-examined using a constrained curve fitting approach. Effective fits of the multiplet splitting present could be attained for the oxides with unfilled 3d bands if multiple final states were assumed. The type of transitions implied, also suggest the classification of these oxides during core level photoelectron emission as either; Mott–Hubbard (V₂O₅, VO₂, V₂O₃, Cr₂O₃, and FeO), intermediate (MnO, Mn₂O₃, and MnO₂) or charge transfer type compounds (FeSrO₃, CoO, NiO, CuO and Cu doped CaTiO₃). These transitions along with relationships defining the splitting energy with respect to the total spin and binding energy are discussed.     

XPS study of SnTe(1 0 0) oxidation by molecular oxygen

The interaction between the (1 0 0) surface of SnTe single crystal and molecular oxygen was studied by means of X-ray photoelectron spectroscopy (XPS). Analysis of the obtained spectra shows that the mechanism of surface oxidation does not change in the range of oxygen exposure 10⁸-10¹³ L. During the oxidation an additional component shifted 1.1 eV towards higher binding energies appears in the Sn 3d spectra. The Te 3d_5/2 spectra fitting reveals two additional components with binding energies close to Te⁰ and Te⁺⁴. The dependence of the additional components fraction in both Sn 3d and Te 3d_5/2 spectra on the oxygen exposure is semi-logarithmic. On the base of the experimental data two possible mechanisms are proposed.     

X-ray photoelectron spectroscopy characterization of oxidated Si particles formed by pulsed ion-beam ablation

X-ray photoelectron spectroscopy (XPS) is used to probe oxidation states of Si species in particles deposited using a pulsed ion-beam evaporation method. The effects of He ambient gas, ion beam intensity and post-treatments on the oxides composition and oxygen content have been studied. It is found that presence of He ambient gas led to a profound oxidation of Si species as compared to that prepared in vacuum at the same ion-beam ablation energy, i.e. both increase of SiO₂ component and oxygen concentration in the oxides coverage. The deposition in He also resulted in an increase of oxygen concentration even under lower ablation intensity, but a higher Si suboxides concentration. It is revealed that the reaction between Si and O was controlled by the ion beam intensity (temperature of Si plasma) and the gas ambient (collision probability of Si and O species). The difference in structure of oxide layers for samples obtained under various conditions is discussed based on the results of XPS analyses.     

Origin of the surface recombination centers in ZnO nanorods arrays by X-ray photoelectron spectroscopy

The surface composition of as-grown and annealed ZnO nanorods arrays (ZNAs) grown by a two-step chemical bath deposition method has been investigated by X-ray photoelectron spectroscopy (XPS). XPS confirms the presence of OH bonds and specific chemisorbed oxygen on the surface of ZNAs, as well as H bonds on surfaces which has been first time observed in the XPS spectra. The experimental results indicated that the OH and H bonds play the dominant role in facilitating surface recombination but specific chemisorbed oxygen also likely affect the surface recombination. Annealing can largely remove the OH and H bonds and transform the composition of the other chemisorbed oxygen at the surface to more closely resemble that of high temperature grown ZNAs, all of which suppresses surface recombination according to time-resolved photoluminescence measurements.     

Si衬底上生长的MnSi薄膜和MnSi1．7纳米线的STM和XPS分析

本文采用分子束外延方法制备出MnSi薄膜和MnSi1．7纳米线,利用扫描隧道显微镜进行观察,采用X射线光电子能谱仪系统地分析了MnSi薄膜和MnSi1．7纳米线的Mn2p和Si2p．结果表明厚度为-0．9nm的MnSi薄膜表面为／3×／3重构,MnSi1．7纳米线长50ff--1500nm,宽16—18nm,高-3nm．MnSi薄膜的Mn2p1／2和Mn2p3／2峰位与MnSil．7纳米线相同,均分别为649．7eV和638．7ev结合能在640-645eV和-653．8eV处的锰氧化合物的Mn2ps／2和Mn2p1／2峰证明在短暂暴露于空气中后MnSi薄膜和MnSi1．7纳米线表面有氧化层形成．相对于纯si的si2p谱,两种锰硅化合物的Si2p谱向低结合能方向发生了位移,表明随着锰硅化合物的形成Si的化学环境发生了变化．     

Surface oxidation of NiCo alloy: A comparative X-ray photoelectron spectroscopy study in a wide pressure range

Oxidation of NiCo alloy has been studied under two pressure regimes, 5 × 10⁻¹⁰ and 5 × 10⁻¹ bar, by X-ray photoelectron spectroscopy (XPS). The aim of this work is to investigate the synergetic effect between the two alloy components during the initial stages of oxidation. The results showed that at low oxygen pressure, segregation and preferential oxidation of cobalt takes place, while oxidation of nickel is largely suppressed. The species dominating the surface is CoO but small amount of metallic cobalt still remains even after prolonged oxidation at 670 K. At 0.5 bar O₂ pressure, alloy oxidation was found to be temperature depended. From 420 K to 520 K, cobalt is completely transformed to CoO and the Ni:Co atomic ratio at the surface approaches a minimum, similar to the observations at low pressure regime. However, at higher temperatures (from 520 K to 720 K), nickel is re-segregated on the surface, in the expense of cobalt, while CoO is further oxidized to Co₃O₄. At this temperature range formation of mixed Ni-Co-O spinel-like oxides is probable as supported by the characteristic modifications of the Ni 2p_3/2 photoelectron peak and the increase of the Ni:Co atomic ratio.     

双原子填充式skutterudite化合物的结构及X射线光电子能谱分析

用高温熔融、淬火、扩散退火结合放电等离子烧结(SPS)法合成了Ca和Ce复合填充的单相Ca_mCe_nFe_xCo_4-xSb₁₂(m=0.17—0.27，n=0.05—0.25，x=1.5)化合物，并结合Rietveld结构解析以及X射线光电子能谱(XPS)分析研究了两种原子复合填充skutterudite化合物的结构与填充状态.Rietveld结构解析表明，Ca_mCe_nFe_1.5Co_2.5Sb₁₂化合物具有skutterudite结构，Ca和Ce原子填充到了Sb的二十面体空洞中，填充原子热振动参数B_Ca/Ce远大于框架原子的热振动参数B_Fe/Co和B_Sb.XPS元素窄区谱分析结果表明，Sb原子在结构中有五种化学状态，每种化学状态的相对含量主要由总填充分数决定，填充原子Ca在Sb的二十面体空洞出现概率有三种可能，但在中心位置出现的概率最大. 关键词： skutterudite化合物 双原子复合填充 结构 X射线光电子能谱分析     

X-ray photoelectron and X-ray Auger electron spectroscopy studies of heavy ion irradiated C60 films

The influence of 200 MeV Au ion irradiation on the surface properties of polycrystalline fullerene films has been investigated. The X-ray photoelectron and X-ray Auger electron spectroscopies are employed to study the ion-induced modification of the fullerene, near the surface region. The shift of C 1s core level and decrease in intensity of shake-up satellite were used to investigate the structural changes (like sp² to sp³ conversion) and reduction of π electrons, respectively, under heavy ion irradiation. Further, X-ray Auger electron spectroscopy was employed to investigate hybridization conversion qualitatively as a function of ion fluence.