The effects of C substitution and disorder on the field dependent critical current density in MgB2 with nano-SiC additions

In this work, nano sized SiC powders were mixed with Mg and B and reacted by either a one-step insitu or two-step method resulted in different level of C substitution. X-ray diffraction shows the presence of Mg₂Si signifying that the reaction between SiC and Mg occurred leading to the release of C in samples reacted in one-step method. Moreover, the much reduced value of a-axis indicates C substitution took place. Resistivity measurements showed higher intragrain scattering owing to a higher density of defects and/or impurities. These samples also show higher H_irr and H_c2 at 20 K in comparison to samples with mainly unreacted SiC (hence lower C substitution). More importantly, their J_c’s are more insensitive to high magnetic field (>4 T) at 6 K. However, at 20 K the effect of C content on J_c(H) is less pronounced. Finally, the order of magnitude of J_c(H) at both 6 K and 20 K is rather dominated by pinning.     

Effects of surface damage on critical current density in MgB2 thin films

We investigated the influence of surface damage on the critical current density (J_c) of MgB₂ thin films via 140-keV Co-ion irradiation. The J_c(H) of the surface-damaged MgB₂ films was remarkably improved in comparison with that of pristine films. The strong enhancement of J_c(H) caused by a surface damage in MgB₂ films can be ascribed to additional point defects along with an atomic lattice displacement introduced through low-energy Co-ion irradiation, which is consistent with the change in the pinning mechanism, from weak collective pinning to strong plastic pinning. The irreversible magnetic field (H_irr) at 5 K for surface-damaged MgB₂ films with a thickness of 850 and 1300 nm was increased by a factor of approximately 2 compared with that of a pristine film. These results show that the surface damage produced by low energy ion irradiation can serve as an effective pinning source to improve J_c(H) in a MgB₂ superconductor.     

Angular dependences of critical current density in YBCO thin films with crossed columnar defects

We investigated the dependences of the critical current density J_c on the magnetic field angle θ in YBa₂Cu₃O_7−δ thin films with the crossed configurations of the columnar defects (CDs). To install the crossed CDs, the films were irradiated using the high energetic Xe ions at two angles relative to the c-axis. The additional peak around the c-axis appears in the J_c(θ) for all irradiated films. In lower magnetic fields, the height of the J_c(θ) peak caused by the crossed CDs with the crossing angles θ_i = ±10° was higher than that for the parallel CDs. It is considered that the correlation of the flux pinning by the crossed CDs along the c-axis occurs even in the case of θ_i = ±25°, which was also suggested by the kink behaviors of the scaling parameters of the current–voltage characteristics near 1/3 of the matching field. In higher magnetic fields, on the other hand, the height and width of the J_c(θ) peak for the crossed CD configurations rapidly reduce with increasing the magnetic field compared to the parallel ones. In the crossed CD configurations, the dispersion in the direction of CDs would prevent the correlation of flux pinning along the c-axis in high magnetic fields, which occurs in the parallel CD configurations due to the collective pinning of flux lines including the interstitial flux lines between the directly pinned flux lines by CDs.     

Current transport property in GdBCO coated conductor with artificial pinning centers in a wide range of temperature,magnetic field up to 27 T,and field angle

We have investigated current transport property in Gd₁Ba₂Cu₃O_7−δ coated conductor with artificial pinning centers in a wide range of temperature, magnetic field, B up to 27 T, and field angle. Due to the additional c-axis correlated pins, critical current density, J_c in B//c was enhanced and the improvement was observed in wide range of B. On the other hand, around B⊥c below 65 K, the angular dependence of n-value showed a valley-like behavior, although the J_c was increasing. In addition, the temperature dependence of the pinning force density defined as J_c × B was not scaled on an expected master curve. These results indicate the pinning in B⊥c is governed by different mechanism below 65 K and high magnetic field.     

Strongly enhanced flux pining of GdBCO coated conductors with BaSnO3 nanorods by pulsed laser deposition

We report the effects of BSO addition on the crystallinity, texture, and the field dependency of critical current density (J_c) of GdBCO coated conductors (CCs) prepared by pulsed laser deposition (PLD). Undoped and BSO-doped GdBCO films showed only c-axis oriented growth, and the incorporated BSO nanorods exhibited epitaxial relationship with the GdBCO matrix. In comparison with undoped film, BSO-doped GdBCO film exhibited greatly enhanced J_c and higher pinning force densities in the entire field region of 0–5 T (H//c) at 77 and 65 K. The BSO-doped GdBCO film showed the maximum pinning force densities (F_p) of 6.5 GN/m³ (77 K, H//c) and 32.5 GN/m³ (65 K, H//c), ～2.8 times higher than those of the undoped sample. Cross-sectional TEM analyses exhibited nano-structured BSO nanorods roughly aligned along the c-axis of the GdBCO film, which are believed effective flux pinning centers responsible for strongly improved critical current densities in magnetic fields.     

Effect of sorbic acid doping on flux pinning in bulk MgB2 with the percolation model

In this paper, we study the doping effect of sorbic acid (C₆H₈O₂), from 0 to 20 wt.% of the total MgB₂, on critical temperature (T_c), critical current density (J_c), irreversibility field (H_irr) and crystalline structure. The XRD patterns of samples show a slightly decrease in a-axis lattice parameter for doped samples, due to the partial substitution of carbon at boron site. On the other hand, we investigate the influence of doping on the behavior of flux pinning and J_c(B) in the framework of percolation theory and it is found that the J_c(B) behavior could be well fitted in high field region. The two key parameters, anisotropy and percolation threshold, play very important roles. It is believed that the enhancement of J_c is due to the reduction of anisotropy in high field region.     

Structural, magnetic and electric properties of HoMnO3 films on SrTiO3(001)

HoMnO₃ films were grown on pure and Nb-doped SrTiO₃ (001) substrates by pulsed laser deposition. The films grew epitaxially with the c-axis along the substrate normal. Varying the deposition temperature between 650 and 850 °C did not significantly affect the structural and magnetic properties of the films, whereas growth in oxygen partial pressures below 0.01 mbar lead to a degradation of the structural properties. Some of the films had a ferromagnetic-like magnetic phase transition at about 45 K, probably related to Mn₃O₄ precipitates; this magnetic response was isotropic. The Ho sublattice was found to be paramagnetic down to 5 K, but showing a pronounced anisotropy with the c-axis being the hard axis. The films showed a distinct dielectric anomaly at 16 K that depended on voltage and slightly on frequency in the range between 1 kHz and 1 MHz. The magnetoelectric effect was large with an in-plane field of 8 T suppressing the dielectric anomaly completely.     

Effect of oxygen pressure on microstructure and magnetic properties of strontium hexaferrite (SrFe12O19) film prepared by pulsed laser deposition

The effects of oxygen pressure during deposition on microstructure and magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films grown on Si (100) substrate with Pt (111) underlayer by pulsed laser deposition have been investigated. X-ray diffraction pattern confirms that the films have c-axis perpendicular orientation. The c-axis dispersion (Δθ₅₀) increases and c-axis lattice parameter decreases with increasing oxygen pressure. The films have hexagonal shape grains with diameter of 150-250 nm as determined by atomic force microscopy. The coercivities in perpendicular direction are higher than those in in-plane direction, which shows the films have perpendicular magnetic anisotropy. The saturation magnetization and anisotropy field for the film deposited in oxygen pressure of 0.13 mbar are comparable to those of the bulk strontium hexaferrite. Higher oxygen pressure leads to the films having higher coercivity and squareness. The coercivity in perpendicular and in-plane directions of the film deposited in oxygen pressure of 0.13 mbar are 2520 Oe and 870 Oe, respectively.     

Effect of magnetic field on the TC and magnetic properties for the aligned MnBi compound

In the compound MnBi, a first-order transition from the paramagnetic to the ferromagnetic state can be triggered by an applied magnetic field and the Curie temperature increases nearly linearly with an increase in magnetic field by ∼2 K/T. Under a field of 10 T, T_C increases by 20 and 22 K during heating and cooling, respectively. Under certain conditions a reversible magnetic field or temperature induced transition between the paramagnetic and ferromagnetic states can occur. A magnetic and crystallographic H-T phase diagram for MnBi is given. Magnetic properties of MnBi compound aligned in a Bi matrix have been investigated. In the low temperature phase MnBi, a spin-reorientation takes place during which the magnetic moments rotate from being parallel to the c-axis towards the basal plane at ∼90 K. A measuring Dc magnetic field applied parallel to the c-axis of MnBi suppresses partly the spin-reorientation transition. Interestingly, the fabricated magnetic field increases the temperature of spin-reorientation transition T_s and the change in magnetization for MnBi. For the sample solidified under 0.5 T, the change in magnetization is ∼70% and T_s is ∼91 K.     

The dc magnetic field,temperature and film thickness dependence of microwave surface resistance of YBCO and DyBCO thin films

We investigated the dc magnetic field and temperature dependences of the microwave surface resistance (R_s) of YBa₂Cu₃O_y (YBCO) and DyBa₂Cu₃O_y (DyBCO) superconducting thin films. The YBCO and DyBCO thin films, each with a thickness of 300, 500, or 700 nm, were deposited on MgO (1 0 0) substrates by the thermal co-evaporation method. The R_s was measured using the dielectric resonator method. A dc magnetic field of up to 5.0 T was applied parallel to the c-axis of the superconducting thin films. The results showed that the R_s value had almost the same temperature dependence at various thicknesses in a zero-external field. The R_s of the YBCO and DyBCO thin films increased with the applied dc magnetic field. The DyBCO thin films showed weaker magnetic field dependence of R_s than the YBCO thin films. The R_s ratio (defined as R_s(5 T)/R_s(0 T)) linearly increased with the film thickness. These results show that pinning strength decreased with an increasing film thickness.     

Enhanced flux-pinning in fluorine-free MOD YBCO films by chemical doping

YBCO films without and with dilute cobalt and zinc doping were prepared on (0 0 l) LaAlO₃ substrate by non-fluorine metal organic deposition method. Effects of dilute cobalt and zinc doping on biaxial texture, microstructure and flux-pinning properties of YBCO films were investigated. The surface density and smoothness of the doped YBCO films have been distinctly improved compared with that of the pure film. Dilute cobalt- and zinc-doped YBCO films exhibit significantly enhanced J_c values in the magnetic field. The best result is achieved in the cobalt-doped YBCO film. At 77 K, J_c values of cobalt-doped film are 1.7 and 5.4 times higher than that of pure film in 0.5 T and 1.5 T, respectively. These results strongly suggest that dilute cobalt and zinc doping is a promising way to increase the current carrying capability of YBCO films.     

Fast epitaxial growth of a-axis- and c-axis-oriented YBa2Cu3O7−δ films on (1 0 0) LaAlO3 substrate by laser chemical vapor deposition

a-axis- and c-axis-oriented YBa₂Cu₃O_7−δ (YBCO) films were epitaxially grown on (1 0 0) LaAlO₃ substrates by laser chemical vapor deposition. The preferred orientation in the YBCO film changed from the a-axis to the c-axis with increasing laser powers from 77 to 158 W (the deposition temperatures from 951 to 1087 K). The a-axis-oriented YBCO film showed in-plane epitaxial growth of YBCO [0 0 1]//LAO [0 0 1], and the c-axis-oriented YBCO film showed that of YBCO [0 1 0]//LAO [0 0 1]. A c-axis-oriented YBCO film with a high critical temperature of 90 K was prepared at a deposition rate of 90 μm h⁻¹, about 2-1000 times higher than that of metalorganic chemical vapor deposition.     

Effect of Gd addition on the activation energies of Bi-2223 superconductor

We have investigated the effect of addition of Gd in Bi_1.8Pb_0.35Sr_1.9Ca_2.1Cu₃Gd_xO_y superconductor with x=0, 0.1, 0.2, 0.3, 0.4 and 0.5. The samples were prepared using the standard solid-state reaction method. The activation energies, irreversibility fields (H_irr), upper critical fields (H_c2) and coherence lengths at 0 K (ξ(0)) were calculated from the resistivity versus temperature (R-T) curves under DC magnetic fields up to 7 T. The superconducting transition temperature, T_c, and activation energy, U₀, were found to decrease with increase in Gd concentration and with increase in applied magnetic field. The offset transition temperature of the pure (Gd00) sample without applied magnetic field is 108 K, whereas for Gd05 sample, the offset transition temperature drops to 5 K with 7 T applied magnetic field. The activation energy of the Gd00 sample without applied magnetic field is 34,980 K, and for Gd05 sample with 7 T applied field it is 98 K. H_irr and H_c2 values also decrease with increase in Gd addition. The possible reasons for the observed degradation in microstructural and superconducting properties due to Gd addition were discussed.     

Magnetic properties of strontium hexaferrite films prepared by pulsed laser deposition

The magnetic properties of strontium hexaferrite (SrFe₁₂O₁₉) films fabricated by pulsed laser deposition on the Si(100) substrate with Pt(111) underlayer have been studied as a function of film thickness (50–700 nm). X-ray diffraction patterns confirm that the films have c-axis perpendicular orientation. The coercivities in perpendicular direction are higher than those for in-plane direction which indicates the films have perpendicular magnetic anisotropy. The coercivity was found to decrease with increasing of thickness, due to the increasing of the grain size and relaxation in lattice strain. The 200 nm thick film exhibits hexagonal shape grains of 150 nm and optimum magnetic properties of M_s=298 emu/cm³ and H_c=2540 Oe.     

Potential of Nd:YAG pulsed laser deposition method for coated conductor production

A Nd:YAG laser is environmentally safe and economical with no poisonous or hazardous gases and no expensive gases. We prepared Y123 films by using the fourth harmonic Nd:YAG pulsed laser deposition (PLD) method and optimized the deposition conditions on MgO single crystalline substrates and IBAD-MgO substrates for Y123 coated conductor. We found that the optimal deposition conditions acquired bi-axially aligned Y123 films on both substrates with T_c ∼ 90 K and J_c > 1 MA/cm² at 77 K in self-field. For obtaining high I_c, we fabricated thick Y123 films on both substrates and the maximum I_c per 1 cm in width reached 186 A/cm-width on the IBAD-MgO substrate. Interestingly, there were no a-axis oriented grains within the films up to 1.8 μm thick. This might be an especial feature of the Nd:YAG-PLD method. We believe that the Nd:YAG-PLD method is promising method for RE123 coated conductor production.     

Magnetic properties of Nd–Fe–B film magnets prepared by RF sputtering

Highly oriented films of ∼6 μm in thickness consisting of the Nd₂Fe₁₄B compound phase were obtained by a three-dimensional sputtering method at room temperature and the subsequent crystallization by annealing. The c-axis orientation and coercivity of film samples were sensitive to the sputtering parameters and annealing conditions. The optimum temperature and time for annealing were 650 °C and 30 min to show the highest coercivity without any deterioration for the orientation of Nd₂Fe₁₄B grains, and furthermore the degree of c-axis orientation was increased by decreasing the Ar gas pressure or input power for sputtering. The resultant film magnets with good magnetic properties of B_r=∼1.06 T, H_C=∼371 kA/m, and (BH)_max=∼160 kJ/m³ were obtained under the optimized parameters for sputtering.     

Thickness dependence of Ic and Jc of LTG-SmBCO coated-conductor on IBAD-MgO tapes

We have reported SmBa₂Cu₃O_y (SmBCO) films on single crystalline substrates prepared by low-temperature growth (LTG) technique. The LTG-SmBCO films showed high critical current densities in magnetic fields compared with conventional SmBCO films prepared by pulsed laser deposition (PLD) method. In this study, to enhance critical current (I_c) in magnetic field, we fabricated thick LTG-SmBCO films on metal substrates with ion-beam assisted deposition (IBAD)-MgO buffer and estimated the I_c and J_c in magnetic fields.All the SmBCO films showed c-axis orientation and cube-on-cube in-plane texture. T_c of the LTG-SmBCO films were 93.1–93.4 K. J_c and I_c of a 0.5 μm-thick SmBCO film were 3.0 MA/cm² and 150 A/cm-width at 77 K in self-field, respectively. Those of a 2.0 μm-thick film were 1.6 MA/cm² and 284 A/cm-width respectively. Although I_c increased with the film thickness increasing up to 2 μm, the I_c tended to be saturated in 300 A/cm-width. From a cross sectional TEM image of the SmBCO film, we recognized a-axis oriented grains and 45° grains and Cu–O precipitates. Because these undesired grains form dead layers, I_c saturated above a certain thickness. We achieved that I_c in magnetic fields of the LTG-SmBCO films with a thickness of 2.0 μm were 88 A/cm-width at 1 T and 28 A/cm-width at 3 T.     

200 MeV Ag ion irradiation created columnar defects and enhanced critical current density of La-2125 type superconducting thin films

We have deposited c-axis oriented thin films of La_1.5Dy_0.5CaBa₂Cu₅O_z (La-2125) tetragonal superconductor on LaAlO₃(001) substrates by pulsed laser deposition. These films were irradiated with 200 MeV Ag⁺¹⁵ ions. Atomic force microscopy and elastic recoil detection analysis indicate that the irradiation has created columnar defects through the entire thickness (2000 Å) of these films. With ion irradiation up to 1×10¹¹ ions/cm², the critical current density (J_c(H)) enhances by fivefold, which is attributed to the augmented flux pinning by the columnar defects. A further increase in irradiation to 1×10¹² ions/cm² causes reduction in J_c(H) due to distorted morphology of the film. Our work shows that the enhancement in J_c(H) of the irradiated La-2125 film is comparable to that in irradiated RE-123 (RE = rare earth ion). Also, as the La-2125 type films have greater chemical stability than RE-123, La-2125 type superconductors are potential candidates for applications. It is interesting to note that there are partial flux jumps observed to occur symmetrically in the magnetic hysteresis of irradiated La-2125 thin films with enhanced J_c(H).     

Non-planar spin texture driven dissipation in a ferromagnet-superconductor bilayer

We report the observation of a pronounced dip in the in-plane magnetic field (H_∥) dependence of the critical current density J_c(H) and a peak in resistance R(H) of a NbN-HoNi₅ bilayer at temperatures below the magnetic ordering temperature (T_Curie ≈ 3.5 K) of HoNi₅, which is lower than the onset temperature (≈9 K) of superconductivity in the NbN layer. The extrema in J_c(H) and R(H) appear at fields much below the upper critical field of NbN. We attribute these features to a coupling between localized out-of-plane moments present in the magnetic film and Pearl vortices of the superconducting layer. A spin re-orientation transition of the localized moments by H_∥ breaks this coupling, leading to the observed excess dissipation.     

The epitaxial growth of BaSnO3 buffer layer on IBAD-MgO template and its effects on GdBa2Cu3O7−δ film: A preliminary study

We report a successful fabrication of c-axis oriented GdBa₂Cu₃O_7−δ (GdBCO) films on the BaSnO₃ (BSO) buffer layers on ion-beam assisted deposition (IBAD)-MgO template by pulsed-laser deposition (PLD). The (0 0 l) growth and in-plane textures of BSO buffer layers were found sensitive to the substrate temperature (T_s). With increasing the BSO layer thickness up to ∼165 nm, in-plane texture (Δ? ∼ 6.2°) of BSO layers was almost unaltered while completely c-axis oriented BSO layers were obtainable from samples with the thickness below ∼45 nm. On the BSO buffer layers showing in-plane texture of 6.2° and RMS surface roughness of ∼8.6 nm, GdBCO films were deposited at 780–800 °C. All GdBCO films exhibited Δ? values of 4.6–4.7°, T_c,zero of ∼91 K, and critical current density (J_c) over 1 MA/cm² at 77 K in a self-field. The highest J_c value of 1.82 MA/cm² (I_c of 51 A/cm-width) was achieved from the GdBCO film deposited at T_s of 790 °C. These results support that BSO can be a promising buffer layer on the IBAD-MgO template for obtaining high-J_c GdBCO coated conductors.