In-situ control of different oxygen fugacity experimental study on the electrical conductivity of lherzolite at high temperature and high pressure

At pressure 1.0-4.0 GPa and temperature 1073-1423 K and under the control of oxygen fugacity (Mo+MoO₂, Fe+FeO and Ni+NiO), a YJ-3000t multi-anvil solid high-temperature and high-pressure apparatus and Solartron-1260 impedance/Gain-Phase analyzer were employed to analyze the electrical conductivity of lherzolite. The experimental results showed that: (1) within the range of the selected frequencies (10³-10⁶ Hz), either as viewed from the relationship between the real or imaginary part of complex impedance and the frequency, or from the relationship between modulus, phase angle and frequency, it can be seen clearly that the complex impedance has a strong dependence on frequency; (2) with the rise of temperature (T), the electrical conductivity (σ) increased, and Lg σ and 1/T follows the Arrhenius relationship; (3) with the rise of pressure, the electrical conductivity decreased, and activation enthalpy and temperature-independent pre-exponential factor decreased as well. And the activation energy and activation bulk volume of the main charge carrier in the lherzolite have been obtained for the first time, which are 1.68±0.02 eV and 0.04±0.01 cm³/mol, respectively; (4) under the given pressure and temperature, the electrical conductivity tends to increase with increasing oxygen fugacity, and under the given pressure, the activation enthalpy and pre-exponential factor tend to decrease with the rise of oxygen fugacity; (5) at 2.0 GPa and the control of the three solid buffers, Mo+MoO₂, Fe+FeO and Ni+NiO, the exponential factors of electrical conductivity variation range with oxygen fugacity are , and the theoretical model for the relationship between the electrical conductivity of lherzolite and the oxygen fugacity under high pressure has been established for the first time; (6) the electrical conduction mechanism of small polarons provides a reasonable explanation to the variation of conductivity of lherzolite with oxygen fugacity.     

The band gap and electrical resistivity of FeS2-pyrite at high pressures

The indirect energy gap and electrical resistivity of FeS₂-pyrite have been measured at high pressures and 300 K using optical absorption spectroscopy and electrical conductivity measurements. Absorption spectra extend to ∼28 GPa, while resistivity is determined to ∼34 GPa. The band gap of FeS₂ is indirect throughout this pressure range and decreases linearly with pressure at a rate of −1.13(9)×10⁻² eV/GPa. If this linear trend continues, FeS₂ is expected to metallize at a pressure of 80(±8) GPa. The logarithm of resistivity also linearly decreases with pressure to 14 GPa with a slope of −0.101(±0.001)/GPa. However, between 14 and 34 GPa, the logarithm of resistivity is nearly constant, with a slope of −0.011(±0.003)/GPa. The measured resistivity of pyrite may be generated predominantly by extrinsic effects.     

Effect of solution molarity on the characteristics of vanadium pentoxide thin film

Vanadium pentoxide (V₂O₅) thin films have been prepared by spray pyrolysis technique. The influence of solution molarity on the characteristics of the V₂O₅ has been investigated. X-ray diffraction analysis (XRD) showed that, the films deposited at ≥0.1 M were orthorhombic structure with a preferential orientation along 〈0 0 1〉 direction. Moreover, the crystallinity was improved by increasing solution molarity. The microstructure parameters have been evaluated by using a single order Voigt profile method. The optical band gaps, determined by using Tauc plot, have been found to be 2.50 ± 0.02 and 2.33 ± 0.02 eV for the direct and indirect allowed transition, respectively. Also the complex optical constants for the wavelength range 300-2500 nm are reported. At room temperature, the dark conductivity as a function of solution molarity showed the range of 5.74 × 10⁻² ± 0.03 to 3.36 × 10⁻¹ ± 0.02 Ω⁻¹ cm⁻¹. While at high temperature, the behaviour of electrical conductivity dominated by grain boundaries. The values of activation energy and potential barrier height were 0.156 ± 0.011 and 0.263 ± 0.012 eV, respectively.     

Electrical property of nanocrystalline γ-Fe2O3 under high pressure

Using a microcircuit fabricated on a diamond anvil cell, in situ conductivity measurements on nanophase (NP) γ-Fe₂O₃ are obtained under high pressure. For NP γ-Fe₂O₃, the abrupt increase in electrical conductivity occurs at a pressure of 21.3 GPa, corresponding to a transition from maghemite to hematite. Above 26.4 GPa, conductivity increases smoothly with increasing pressure. No distinct abnormal change is observed during decompression, indicating that transformation is irreversible. The temperature-dependence of the conductivity of NP γ-Fe₂O₃ was investigated at several pressures, indicating the electrical conductivity of the sample increases with increasing pressure and temperature, and that a remarkable phenomenon of discontinuity occurs at 400 K. The abnormal change is attributed to the electronic phase transitions of NP γ-Fe₂O₃ due to the variation of inherent cation vacancies. Besides, the temperature-dependence of the electrical conductivity displays semiconductor-like behavior before 33.0 GPa.     

Experimental measurement of the electrical conductivity of pyroxenite at high temperature and high pressure under different oxygen fugacities

Electrical conductivities of pyroxenite were measured between frequencies of 10^?1 and 10⁶ Hz in a multi-anvil pressure apparatus using different solid buffers (Ni+NiO, Fe+Fe₃O₄, Fe+FeO and Mo+MoO₂) to stabilize the partial pressure of oxygen. The temperature ranged from 1073 to 1423 K (800 to 1200 °C) and the pressure from 1.0 to 4.0 GPa. We observe that: (1) the electrical conductivity (σ) of pyroxenite depends on frequency; (2) σ tends to increase with rising temperature (T), and Log σ and 1/T obey a linear Arrhenius relationship; (3) under control of the buffer Fe+Fe₃O₄, σ tends to decrease with rising pressure, nevertheless the activation enthalpy tends to increase. For the first time we have obtained values for the activation energy and activation bulk volume of the main charge carriers, which are (1.60±0.07) eV and (0.05±0.03) cm³/mol, respectively; (4) for a given pressure and temperature, σ tends to rise with increased oxygen fugacity, whereas the activation enthalpy and preexponential factor tend to decrease; and (5) the behaviour of the electrical conductivity at high temperature and high pressure can be reasonably interpreted by assuming that small polarons provide the dominant conduction mechanism in the pyroxenite samples.     

Electrical properties and dielectric relaxation of thermally evaporated zinc phthalocyanine thin films

The electrical transport properties and dielectric relaxation of Au/zinc phthalocyanine, ZnPC/Au devices have been investigated. The DC thermal activation energy at temperature region 400-500 K is 0.78 eV. The dominant conduction mechanisms in the device are ohmic conduction below 1 V and space charge limited conduction dominated by exponential trap distribution in potentials >1 V. Some parameters, such as concentration of thermally generated holes in valence band, the trap concentration per unit energy range at the valence band edge, the total concentration of traps and the temperature parameter characterizing the exponential trap distribution and their relation with temperatures have been determined. The AC electrical conductivity, σ_ac, as a function of temperature and frequency has been investigated. It showed a frequency and temperature dependence of AC conductivity for films in the temperature range 300-400 K. The films conductivity in the temperature range 400-435 K increased with increasing temperature and it shows no response for frequency change. The dominant conduction mechanism is the correlated barrier hopping. The temperature and frequency dependence of real and imaginary dielectric constants and loss tangent were investigated.     

Ionic to electronic dominant conductivity in Al2(WO4)3 at high pressure and high temperature

Electrical conduction and crystal structure of Al₂(WO₄)₃ at 400 °C have been studied as a function of pressure up to 5.5 GPa using impedance methods and synchrotron radiation X-ray diffraction, respectively. AC impedance spectroscopy and DC polarization measurements reveal an ionic to electronic dominant transition in electrical conductivity at a pressure as low as 0.9 GPa. Conductivity increases with pressure and reaches a maximum at 4.0 GPa, where the conductivity value is 5 orders of magnitude greater than the 1 atm value. Upon decompression, the conductivity retains the maximum value until the sample is cooled at 0.5 GPa. The high pressure-temperature X-ray diffraction results show that the lattice parameters decrease as pressure increases and the crystal structure undergoes an orthorhombic to tetragonal-like transformation at a pressure ∼3.0 GPa. The change of conduction mechanism from ionic to electronic may be explained by means of pressure-induced valence change of W⁶⁺→W⁵⁺, which results in electron transfer between W⁵⁺-W⁶⁺ sites at high pressure.     

Electron hopping mechanism in hematite (α-Fe2O3)

The frequency dependence of the real (?′) and imaginary (?″) parts of the dielectric constant of polycrystalline hematite (α-Fe₂O₃) has been investigated in the frequency range 0-100 kHz and the temperature range 190-350 K, in order to reveal experimentally the electron hopping mechanism that takes place during the Morin transition of spin-flip process. The dielectric behaviour is described well by the Debye-type relaxation (α-dispersion) in the temperature regions T<233 K and T>338 K. In the intermediate temperature range 233 K<T<338 K a charge carrier mechanism takes place (electron jump from the O²⁻ ion into one of the magnetic ions Fe³⁺) which gives rise to the low frequency conductivity and to the Ω-dispersion. The temperature dependence of relaxation time (τ) in the −ln τ vs 10³/T plot shows two linear regions. In the first, T<238 K, τ increases with increasing T implying a negative activation energy −0.01 eV, and in the second region T>318 K τ decreases as the temperature increases implying a positive activation energy 0.12 eV. The total reorganization energy (0.12-0.01) 0.11 eV is in agreement with the adiabatic activation energy 0.11 eV given by an ab initio model in the literature. The temperature dependence of the phase shift in the frequencies 1, 5, 10 kHz applied shows clearly an average Morin temperature T_Mo=284±1 K that is higher than the value of 263 K corresponding to a single crystal due to the size and shape of material grains.     

Effect of nickel substitution on defect chemistry, electrical properties, and dimensional stability of calcium-doped yttrium chromite

The effect of nickel substitution on defect chemistry, electrical properties, and dimensional stability of calcium-doped yttrium chromite was studied for use as an interconnect material in high temperature solid oxide fuel cells (SOFCs). The compositions of Y_0.8Ca_0.2Cr_1 − xNi_xO_3 ± δ (x = 0-0.15), prepared using the glycine nitrate process, showed single phase orthorhombic perovskite structures over a wide range of oxygen partial pressures (4.6 × 10^− 20 atm ≤ pO₂ ≤ 0.21 atm at 900 °C). X-ray diffraction (XRD) analysis indicated that most of the nickel ions replacing chromium ions are divalent and act as acceptor dopants, leading to a substantial increase in conductivity. In particular, the conductivity at 900 °C in air increased from 10 S/cm to 34 S/cm with 15% nickel substitution, and an increase in charge carrier density was confirmed by Seebeck measurements, which validated the predominant Ni²⁺ oxidation state. A point defect model was derived, and the relationship between electrical conductivity and oxygen partial pressure was successfully fitted into the proposed model. The defect modeling results indicated that nickel substitution improves the stability of calcium-doped yttrium chromite toward reduction and suppresses the oxygen vacancy formation, which results in significantly increased electrical conductivity in reducing environment. The electrical conductivity of Y_0.8Ca_0.2Cr_0.85Ni_0.15O_3 ± δ at 900 °C in reducing atmosphere (pO₂ = 10^− 17 atm) was 5.8 S/cm, which was more than an order of magnitude higher than that of Y_0.8Ca_0.2CrO_3 ± δ (0.2 S/cm). Improved stability in reducing atmosphere was further confirmed by dilatometry measurements showing reduced isothermal “chemical” expansion, and the isothermal expansion in reducing atmosphere (pO₂ = 10^− 17 atm) at 900 °C decreased from 0.07% for Y_0.8Ca_0.2CrO_3 ± δ to 0.03% for Y_0.8Ca_0.2Cr_0.85Ni_0.15O_3 ± δ. Based on these results, enhanced electrical performance and mechanical integrity is expected with nickel substitution on calcium-doped yttrium chromite in SOFC operating conditions.     

Crystallization and electrical properties of V2O5 thin films prepared by RF sputtering

V₂O₅ thin films were prepared under various conditions by using reactive RF sputtering technique. The microstructure and electrical properties of the films are have been investigated. X-ray diffraction data revealed the films deposited at low O₂/Ar ratio are amorphous. The orthorhombic structure of film improved after post annealing at 873 K. The microstructure parameters (crystallite/domain size and macrostrain) have been evaluated by using a single order Voigt profile method. Using the two-point probe technique, the dark conductivity as a function of the condition parameters such as film thickness, oxygen content and temperature are discussed. It was also found that, the behaviour of ρd versus d was found to fit properly with the Fuchs-Sondheimer relation with the parameters: ρ_o = 2.14 × 10⁷ Ω cm and ?_o = 112 ± 2 nm. At high temperature, the electrical conductivity is dominated by grain boundaries, the values of activation energy and potential barrier height were 0.90 ± 0.02 eV and 0.92 ± 0.02 V, respectively.     

Synthesis and characterization of doped apatite-type lanthanum silicates for SOFC applications

A series of iron- and/or aluminium-doped apatite-type lanthanum silicates (ATLS) La_9.83Si_{6 ‐ x ‐ y}Al_xFe_yO_26 ± δ (x = 0, 0.25, 0.75, and 1.5, y = 0, 0.25, 0.75, and 1.5) were synthesized using the mechanochemical activation (MA), solid state reaction (SSR), Pechini (Pe) and sol-gel (SG) methods. The total conductivity of the prepared materials was measured under air in the temperature range 600-850 °C using 4-probe AC impedance spectroscopy. Its dependence on composition, synthesis method, sintering conditions and powder particle size was investigated. It was found that for electrolytes of the same composition, those prepared via mechanochemical activation exhibited the highest total specific conductivity, which was improved with increasing Al- and decreasing Fe-content. The highest conductivity value at 700 °C, equal to 2.04 × 10^− 2 S cm^− 1, was observed for the La_9.83Si₅Al_0.75Fe_0.25O_26 ± δ electrolyte. La_9.83Si_4.5Fe_1.5O_26 ± δ electrolyte samples synthesized using the Pechini method exhibited higher conductivity when sintered conventionally than when spark-plasma sintering (SPS) was used.     

Electric impedance study of elastic alternating propylene-carbon monoxide copolymer (PCO-200)

The electrical properties of elastic alternating propylene-carbon monoxide copolymer (PCO-200) were investigated using the impedance spectroscopy technique. The results revealed a phase transition at about 70 °C where the material transforms from its insulating phase of conductivity in the order of 6×10⁻⁹ to about 9×10⁻⁵ (Ω m)⁻¹, The second phase is characterized by temperature dependent electrical relaxation phenomena. The plot of the complex electric modulus and the complex impedance yields semicircles in the temperature range 70 up to 110 °C and a decreasing radius with increasing temperature. The activation energy was found to be in the order of 0.8 eV.     

Fabrication, magnetism and high frequency application of exchange-coupled Fe65Co35±2-SiO1.7±0.2 granular films

A series of (Fe₆₅Co_35±2)_x-(SiO_1.7±0.2)_1−x nano-granular films with various metal volume fractions (x) were fabricated by rf sputtering. In a wide range, excellent soft magnetic properties have been achieved. In the x range from 0.7 to 0.48, the films exhibit small coercivity H_c not exceeding 4 Oe and high electrical resistivity ρ up to 1.15 × 10⁴ μΩ cm. And a minimum H_c value of 1.65 Oe was obtained for the sample of x = 0.57 with ρ = 2.86 × 10³ μΩ cm. At a frequency lower than 2.0 GHz, the real part μ′ of complex permeability of this sample is more than 170 and the FMR frequency is as high as 2.6 GHz, implying a high cut-off frequency for high frequency applications. With decreasing Fe₆₅Co_35±2 volume fraction, the resistivity of films increases remarkably and the grain size decreases obviously. At the same time, the coercivity H_c decreases with grain size decreasing, which is consistent with the conclusion resulted from random anisotropy model quoted by Herzer. Study on Henkel plots shows that intergranular ferromagnetic exchange coupling exists among grains and is important for realizing soft magnetic properties.     

UV laser-induced transport properties change in silver metaphosphate glass

Samples of AgPO₃ were prepared from analar oxides (BDH) using standard sintering ceramic technique. The effect of UV Nd:YAG pulsed laser irradiation with wavelength of 355 nm on the transport properties of the prepared glassy samples AgPO₃ was studied. The frequency and temperature dependences of the A.C. conductivity and dielectric properties were analyzed in the temperature range (300 K ≤ T ≤ 393 K) throughout a range of applied frequencies (0.1 kHz ≤ f ≤ 400 kHz). The activation energies were calculated at different temperatures for the unirradiated and irradiated samples. Comparison between the A.C. electrical conductivity, dielectric constant, and dielectric loss, for unirradiated and irradiated samples was performed. The bulk conductivity has been measured with complex impedance method. Cole-Cole diagram has been investigated to obtain the bulk activation energy which corresponds to D.C. conductivity. Results indicate the semiconducting like behavior. At low temperatures and frequencies, random diffusion of the ionic charge carriers via activated hopping gives rise to a frequency independent conductivity characterizing the D.C. conductivity. It was observed that the A.C. and D.C. activation energies have the same order of magnitude.     

Accelerated life ac conductivity measurements of CRT oxide cathodes

The ac conductivity measurements have been carried out for the activated Ba/SrO cathode with additional 5% Ni powder for every 100 h acceleration life time at the temperature around 1125 K. The ac conductivity was studied as a function of temperature in the range 300-1200 K after conversion and activation of the cathode at 1200 K for 1 h in two cathodes face to face closed configuration. The experimental results prove that the hopping conductivity dominate in the temperature range 625-770 K through the traps of the WO₃ associate with activation energy E_a = 0.87 eV, whereas from 500-625 K it is most likely to be through the traps of the Al₂O₃ with activation energy of E_a = 1.05 eV. The hopping conductivity at the low temperature range 300-500 K is based on Ni powder link with some Ba contaminants in the oxide layer stricture which indicates very low activation energy E_a = 0.06 eV.     

Dielectric relaxation in complex perovskite oxide BaCo1/2W1/2O3

Polycrystalline BaCo_1/2W_1/2O₃ (BCW) is prepared by the solid-state reaction technique. The X-ray diffraction study of the compound at room temperature reveals the monoclinic phase. The field dependence of the dielectric constant and the conductivity are measured in the frequency range from 50 Hz to1 MHz and in the temperature range from 300 to 413 K. An analysis of the real and imaginary parts of the dielectric permittivity with frequency is performed. The frequency-dependent maxima in the imaginary impedance are found to obey an Arrhenius law with an activation energy=0.86 eV. The frequency-dependent electrical data are also analysed in the framework of the conductivity and modulus formalisms.     

Heat capacity anomaly in UO2 in the vicinity of 1300 K: an improved description based on high resolution X-ray and neutron powder diffraction studies

X-ray and neutron powder diffraction studies of UO₂ were performed under controlled oxygen partial pressure between room temperature and 1673 K. More than 40 neutron diffraction patterns were recorded. The thermal expansion coefficient of UO₂ and the temperature dependence of Debye-Waller factors for oxygen and uranium atoms were determined. The dependence of Debye-Waller factors as a function of temperature is linear and the thermal expansion coefficient follows the classical Debye regime within the temperature range 300-1000 K. Above 1200 K, a departure from this quasi-harmonic behavior is clearly observed. Both an abnormal increase of the thermal expansion and of the oxygen sublattice disorder are evidenced. The departure of the lattice parameter from a linear thermal variation is found to be thermally activated with an effective activation energy close to 1 eV, very similar to the activation energy already found for the electrical conductivity. This new result suggests that polarons may affect the mean lattice parameter. A new thermodynamic model is then proposed to explain the heat capacity thermal variation by only three contributions: harmonic phonons, thermal expansion and polarons.     

Structural,electrical and magnetic properties of Zr–Mg cobalt ferrite

Spinel cobalt ferrite, CoFe_2−xM_xO₄ has been synthesized by substitution of the combination of metallic elements M=Zr–Mg by the microemulsion method using polyethylene glycol as a surfactant. Powder X-ray diffraction analysis reveals that the substitution results in shrinkage of the unit cell of cobalt ferrite due to higher binding energy of the synthesized samples. The energy-dispersive X-ray fluorescence analysis confirms the stoichiometric ratios of the elements present. The thermogravimetric analysis shows that the minimum temperature required for the synthesis of these substituted compounds is 700 °C. A two-point probe method was employed for the measurement of the electrical resistivity in a temperature range of 293±5 to 673±5 K. It appears that there is a decrease in the number of Fe²⁺/Fe³⁺ pairs at the octahedral sites due to the substitution and corresponding migration of some of the Fe³⁺ ions to tetrahedral sites, consequently increasing the resistivity and the activation energy of hopping of electron at the octahedral sites. The susceptibility data also suggest migration of Fe³⁺ to tetrahedral site in the initial stage, which results in an increase in A–B interactions leading to large increase in the blocking temperature (T_B) as observed in samples having dopant content x=0.1.     

Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown,single crystal ZnO

We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zn_i related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X_Zn. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) [1]. Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×10¹⁷ cm⁻³ at 200 °C to 4.37×10¹⁸ cm^-3 at 800 °C.     

Thermoelectric properties of Bi0.9Sb0.1 prepared by high pressure

The Bi_0.9Sb_0.1 powders were prepared by mechanical alloying and then pressed under 6 GPa at different pressing temperatures. X-ray diffraction spectra showed that the single phase was formed. The nanostructure of grain was observed by bright-field imaging. Electrical conductivity, Seebeck coefficient, and thermal conductivity had been investigated in the temperature range of 80-300 K. The absolute Seebeck coefficient value of 120.3 μV/K was measured at 130 K. The figure-of-merit reached a maximum value of 0.90×10⁻³ K⁻¹ at 140 K.