The nonlinear optical properties of a magneto-exciton in a strained Ga_(0.2)In_(0.8)As/GaAs quantum dot

The magnetic field-dependent heavy hole excitonic states in a strained Ga0.2In0.8As/GaAs quantum dot are investigated by taking into account the anisotropy,non-parabolicity of the conduction band,and the geometrical confinement.The strained quantum dot is considered as a parabolic dot of InAs embedded in a GaAs barrier material.The dependence of the effective excitonic g-factor as a function of dot radius and the magnetic field strength is numerically measured.The interband optical transition energy as a function of geometrical confinement is computed in the presence of a magnetic field.The magnetic field-dependent oscillator strength of interband transition under the geometrical confinement is studied.The exchange enhancements as a function of dot radius are observed for various magnetic field strengths in a strained Ga0.2In0.8As/GaAs quantum dot.Heavy hole excitonic absorption spectra,the changes in refractive index,and the third-order susceptibility of third-order harmonic generation are investigated in the Ga0.2In0.8As/GaAs quantum dot.The result shows that the effect of magnetic field strength is more strongly dependent on the nonlinear optical property in a low-dimensional semiconductor system.     

Parameter-dependent third-order optical nonlinearity in a CdSe/ZnS quantum dot quantum well in the vicinity of a gold nanoparticle

The nonlinear optical properties of the CdSe/ZnS quantum dot quantum well (QDQW) in the vicinity of a spherical metal nano-particle (MNP) have been described. The third-order nonlinear optical susceptibility induced by the transition between E₁ (inside the well) and E₂ (outside the well) has been calculated for the third-harmonic generation (THG) under the effective mass approximation and modified by the local field theory. The parameters-dependent third-order nonlinear optical susceptibility for the THG has been specifically explored and the influence of the distance between the QDQW and the MNP on the third-order susceptibility for the THG in the system has been shown and analyzed.     

A nanohole in a thin metal film as an efficient nonlinear optical element

The nonlinear optical properties of single nanoholes and nanoslits fabricated in gold and aluminum nanofilms are studied by third harmonic generation (THG). It is shown that the extremely high third-order optical susceptibility of aluminum and the presence of strong plasmon resonance of a single nanohole in an aluminum film make possible an efficient nanolocalized radiation source at the third harmonic frequency. The THG efficiency for a single nanohole in a thin metal film can be close to unity for an exciting laser radiation intensity on the order of 10¹³ W/cm².     

Wetting layer and size effects on the nonlinear optical properties of semi oblate and prolate Si0.7Ge0.3/Si quantum dots

Semi oblate and semi prolate are among the most probable self-organized nanostructures shapes. The optoelectronic properties of such nanostructures are not just manipulated with the height and lateral size but also with the wetting layer element. The practical interest of derivatives of germanium and silicon has a great important role in optoelectronic devices. This study is a contribution to the analysis of linear and nonlinear optical properties of Si_0.7Ge_0.3/Si. In the framework of the effective mass approximation, we solve numerically the Schrödinger equation relative to one particle confined in Si_0.7Ge_0.3/Si semi prolate and semi oblate quantum dots by using the finite element method and by taking into consideration the effect of the wetting layer. The energy spectrum of the lowest states and the dipolar matrix for the fourth allowed transitions are determined and discussed. We also calculate the detailed optical properties, including absorption coefficients, refractive index changes, second and third harmonic generation as a function of the quantum dot sizes. We found that with the change in the size of prolate and oblate quantum dots, there is a shift in the resonance peaks for the absorption coefficient and refractive index. It is due to the modification in the energy levels with changing size. The study proves a redshift in the second harmonic generation and third harmonic generation coefficients with an increase in the height/radius of the oblate/prolate quantum dot, respectively. We also demonstrated the variation of wavefunction inside the quantum dot with the change in wetting layer thickness.     

Third-Order Nonlinear Effect and Polarization-Dependent Modulation Using Spherical-Like MoS2 Nanoparticles

A type of MoS₂ nanoparticle with a spherical-like shape is chemically synthesized with favorable third-order and suppressed second-order nonlinear optical response, which results from the isotropy induced by the geometrical uniformity of nanoparticles and an artificial symmetry center. It is found that the linewidth of third harmonic signal is broadened due to the self-phase modulation effect, another third-order nonlinearity. Moreover, the intensity of harmonic signal can be conveniently adjusted by controlling the polarization state of applied optical field. The artificially designed material morphology may provide a reference for designing all-optical modulation devices.     

Third-order nonlinear optical properties of excitonic state in a semiconductor quantum dot

By considering usual matrix procedures we examine how the exciton affects the nonlinear optical properties of 3-D semiconductor GaAs quantum dot. We calculate the third-order optical susceptibility of the GaAs (well) Al_xGaAs_1?x (barrier), and consequently the refractive index and the absorption coefficient. By increasing the Al content (x) in barrier material, carrier relaxation time is enhanced and the susceptibility peaks and their positions showed a blue shift, which agrees with the existing experimental work. For an anisotropic QD, the third-order nonlinear absorption coefficient depends strongly on the quantum dot width.     

Influence of third-order nonlinear and phase variations on third harmonic generation

A theoretical analysis is presented for third-harmonic generation in KDP for type I/type II angle-detuning scheme of high-intensity laser to produce third harmonic radiation near 0.35 μm. The effects of the third-order nonlinearity and the phase variations on the frequency conversion have been discussed. The results shown that the third-order nonlinear interactions decreases the tripling efficiency, and increases of the modulate strength of the output intensity of 3ω radiation. However, adjusting the angular detuning can compensate effectively the effects of third-order nonlinearity. Furthermore, 3ω conversion efficiency will drop with the increase of the degree of phase variations, and the increase 3ω conversion efficiency can decrease the influence of third-order nonlinearity on the conversion of third harmonics.     

Investigation of third-order nonlinear optical susceptibility in polymer complexes of diarylidenealkanones

The third-order nonlinear optical susceptibility in polymer complexes of diarylidenealkanones has been investigated by the third harmonic generation technique at a wavelength of 1.06 μm. The macroscopic nonlinear susceptibility χ ⁽³⁾ measured is compared with the calculated γ values of the second-rank molar hyperpolarizability tensor. It is demonstrated that low-molecular chromophores can be used in syntheses of the stable polymer composite systems with a high nonlinear optical susceptibility. A further improvement in the nonlinear optical properties of complexes between deprotonated chromophores and high-basicity polymers can be achieved using the proposed methods. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 11, 2000, pp. 2099–2102. Original Russian Text Copyright ? 2000 by Ten’kovtsev, Yakimanski, Lukoshkin, Dudkina, Boehme.     

Characteristics of degenerated four wave mixing in ZnS/CdSe/ZnS quantum dot quantum well with multi-shell structure

The wave functions and eigenenergies of electrons in ZnS/CdSe/ZnS cylindrical quantum dot quantum well (QDQW) have been calculated by solving a three-dimensional nonlinear Schrödinger equation, in the framework of the effective-mass envelope-function theory. The third-order susceptibilities of the degenerated four waves mixing (DFWM) have been calculated theoretically by means of compact density matrix. The third-order susceptibilities as the function of the shell radius R₂, R₃ have been analyzed. The results show that the magnitude of nonlinear susceptibility is increased with the increasing of well radius. The resonance frequency of the photon have a shift when R₂ or R₃ is increasing and the relation between nonlinear susceptibility and relaxation time has also been studied.     

表面光学声子对柱形量子线中三次谐波振荡的影响

本文利用密度矩阵方法研究了表面光学声子对柱形量子线中三次谐波振荡的影响,并且导出了三次谐波振荡的表达式。然后,以GaAs柱形量子线为例作了数值计算。研究表明,当柱形量子线的横向半径d非常小时,电子和表面光学声子之间的耦合强度就非常大,表面光学声子对三次谐波振荡的影响就更强。     

Linear and nonlinear optical properties of a single dopant in GaN conical quantum dot with spherical cap

ABSTRACT

The states of a single dopant centre in zinc-blende GaN-based conical quantum dots with spherical cap are theoretically investigated by analytically solving the corresponding effective mass equation taking advantage of the localisation of the ionised impurity at the cone apex. Nonlinear optical response is analysed through the calculation of the coefficients of optical absorption, relative refractive index change, and second and third harmonic generation, for the chosen set of allowed electron-donor states. The behaviour of the calculated optical quantities under changes in the geometry of the system due to variations in apical width and quantum dot radius is analysed and discussed.     

A study of nonlinear optical properties of a negative donor quantum dot

In this paper, we studied the nonlinear optical properties of a negative donor center (D⁻) in a disk-like quantum dot (QD) with a Gaussian confining potential. Calculations are carried out by using the method of numerical diagonalization of Hamiltonian matrix within the effective-mass approximation. A detailed investigation of the linear, third-order nonlinear, total optical absorptions and refractive index changes has been carried out for the D⁻ QD and the D⁰ QD. The linear, third-order nonlinear, total optical absorptions and refractive indices have been examined for a double-electron QD with and without impurity. Our results show that the optical absorption coefficients and refractive indices in a disk-like QD are much larger than their values for quantum wells and spherical QDs and the nonlinear optical properties of QDs are strongly affected not only with the confinement barrier height, dot radius, the number of electrons but also the electron-impurity interaction.     

Electric field-induced nonlinear optical properties of a hydrogenic impurity in a GaAs/GaAlAs quantum dot: effects of spin–orbit interactions

Nonlinear optical properties, optical rectification coefficients and the second-order and third-order harmonic generation coefficients as a function of photon energy are dealt in a GaAs/Ga_0.8Al_0.2As quantum dot in the presence of electric field and the spin–orbit interactions. The Dresselhaus and the Rashba spin–orbit interactions are added in the Hamiltonian. The electric field-induced photoionization cross section with the normalized photon energy for an on-centre donor impurity in the quantum dot is studied. The effect of nonparabolicity is included in the Hamiltonian. The spin–orbit interaction as a function of photon energy is investigated. The computations are carried out within the framework of the single band effective mass approximation using variational technique and the compact density approach. It is found that the spin–orbit interaction coefficients show strong effects on the resonant position of harmonic generations. The results are compared with the recent investigations.     

耦合量子点的三阶非线性光学特性

本文研究了两个耦合的圆型量子点的三阶光学非线性,并且利用密度矩阵算符理论导出了三次谐波产生的表达式.最后,以GaAs耦合量子点为例作了数值计算,并绘出了三次谐波产生与耦合量子点中的电子数以及光子能量之间的依赖关系.     

Measurement of optical nonlinearity by antiresonant ring interferometric nonlinear spectroscopic (ARINS) technique

We have reported the measurement of third-order optical nonlinearity by antiresonant ring interferometric nonlinear spectroscopic (ARINS) technique and discussed its usefulness over other popular measuring techniques such as Z-scan, degenerate four wave mixing (DFWM) and third harmonic generation (THG). The measurement has been simulated theoretically by taking different numerical values as well as sign of δ, which is a key parameter of ARINS. The technique has been benchmarked using toluene and the theoretical simulation has been substantiated experimentally by measuring the nonlinear optical coefficients (n₂ and β) of two different samples. The disadvantages of the technique have also been discussed. However, a number of advantages of ARINS override its disadvantages and therefore, ARINS may be preferred over other measuring techniques for the measurement of nonlinear optical parameters.     

Electronic states and the resonant optical non-linearity of exciton in a narrow band InSb quantum dot

Binding energy, interband emission energy and the non-linear optical properties of exciton in an InSb/InGa_xSb_1−x quantum dot are computed as functions of dot radius and the Ga content. Optical properties are obtained using the compact density matrix approach. The dependence of non-linear optical processes on the dot sizes is investigated for different Ga concentrations. The linear, third order non-linear optical absorption coefficients, susceptibility values and the refractive index changes of the exciton are calculated for different concentrations of gallium content. It is found that gallium concentration has great influence on the optical properties of InSb/InGa_xSb_1−x dots.     

Electric field induced exciton binding energy and its non-linear optical properties in a narrow InSb/InGaxSb1−x quantum dot

The effect of electric field on the binding energy, interband emission energy and the non-linear optical properties of exciton as a function of dot radius in an InSb/InGa_xSb_1?x quantum dot are investigated. Numerical calculations are carried out using single band effective mass approximation variationally to compute the exciton binding energy and optical properties are obtained using the compact density matrix approach. The dependence of the nonlinear optical processes on the dot sizes is investigated for various electric field strength. The linear, third order non-linear optical absorption coefficients, susceptibility values and the refractive index changes of electric field induced exciton as a function of photon energy are obtained. It is found that electric field and the geometrical confinement have great influence on the optical properties of dots.     

Measurement of nonlinear properties and optical limiting ability of Rhodamine6G doped silica and polymeric samples

The third order nonlinear optical properties of Rhodamine6G (Rh6G) doped silica and polymeric samples have been investigated using single beam z-scan technique under excitation by the second harmonic of Nd:YAG laser beam (532 nm). The nonlinear refractive index, nonlinear absorption coefficient, real and imaginary parts of third order nonlinear susceptibility in the samples of silica and poly-methylmethacrylate (PMMA) matrices are measured. Thermal contribution to the nonlinear refractive index in case of undoped silica samples has been calculated in order to have better accuracy of the material response contribution to third order nonlinearity. The comparative study of the optical limiting performance of Rh6G doped silica and polymeric samples show that Rh6G doped silica is relatively superior for optical limiting applications.     

Pressure-induced threshold optical pump intensity in a CdTe/ZnTe quantum dot

Pressure-induced binding energies of an exciton and a biexciton are studied taking into account the geometrical confinement effect in a CdTe/ZnTe quantum dot. Coulomb interaction energy is obtained using Hartree potential. The energy eigenvalue and wave functions of exciton and the biexciton are obtained using the self-consistent technique. The effective mass approximation and BenDaniel-Duke boundary conditions are used in the self-consistent calculations. The pressure-induced nonlinear optical absorption coefficients for the heavy hole exciton and the biexciton as a function of incident photon energy for CdTe/ZnTe quantum dot are investigated. The optical gain coefficient with the injection current density, in the presence of various hydrostatic pressure values, is studied in a CdTe/ZnTe spherical quantum dot. The pressure-induced threshold optical pump intensity with the dot radius is investigated. The results show that the pressure-induced electronic and optical properties strongly depend on the spatial confinement effect.     

LARGE AND EXTREMELY FAST THIRD-ORDER NON-LINEARITY OF Ag NANOPARTICLES EMBEDDED INTO A CsxO SEMICONDUCTOR MATRIX

The third-order optical nonlinearity of Ag-O-Cs thin films, where Ag nanoparticles are embedded into a Cs_xO semiconductor matrix, was measured by the femtosecond optical Kerr technique. The third-order nonlinear optical susceptibility, χ⁽³⁾, of the thin films was estimated to be 1.1×10^-9 esu at the incident wavelength of 820 nm. The response time, i.e. the full width at half-maximum of the Kerr signal, is as fast as 114 fs only. The intrinsic third-order optical nonlinearity can be attributed to the intraband transition of electrons from the occupied state near the Fermi level to the unoccupied state. It is suggested that such a nonlinearity is further enhanced by the local field effect that is present in the metallic nanoparticles composite thin films.