Topological insulator as an optical modulator for pulsed solid‐state lasers

Topological insulators are states of quantum matter that have narrow topological nontrivial energy gaps and a large third‐order nonlinear optical response. The optical absorption of topological insulators can become saturated under strong excitation. In this work, with Bi₂Se₃ as an example, it was demonstrated that a topological insulator can modulate the operation of a bulk solid‐state laser by taking advantage of its saturable absorption. The result suggests that topological insulators are potentially attractive as broadband pulsed modulators for the generation of short and ultrashort pulses in bulk solid‐state lasers, in addition to other promising applications in physics and computing.     

Topological insulator nanostructures: Materials synthesis, Raman spectroscopy, and transport properties

Nanostructured topological insulator materials such as ultrathin films, nanoplates, nanowires, and nanoribbons are attracting much attention for fundamental research as well as potential applications in low-energy dissipation electronics, spintronics, thermoelectrics, magnetoelectrics, and quantum computing due to their extremely large surface-to-volume ratios and exotic metallic edge/surface states. Layered Bi₂Se₃ and Bi₂Te₃ serve as reference topological insulator materials with a large nontrivial bulk gap up to 0.3 eV (equivalent to 3600 K) and simple single-Dirac-cone surface states. In this mini-review, we present an overview of recent advances in nanostructured topological insulator Bi₂Se₃ and Bi₃Te₃ from the viewpoints of controlled synthesis and physical properties. We summarize our recent achievements in the vapor-phase synthesis and structural characterization of nanostructured topological insulator Bi₂Se₃ and Bi₂Te₃, such as nanoribbons and ultrathin nanoplates.We also demonstrate the evolution of Raman spectra with the number of few-layer topological insulators, as well as the transport measurements that have succeeded in accessing the surface conductance and surface state manipulations in the device of topological insulator nanostructures.     

A new topological insulator built from quasi one‐dimensional atomic ribbons

A novel topological insulator with orthorhombic crystal structure is demonstrated. It is characterized by quasi one‐dimensional, conducting atomic chains instead of the layered, two‐dimensional sheets known from the established Bi₂(Se,Te)₃ system. The Sb‐doped Bi₂Se₃ nanowires are grown in a TiO₂‐catalyzed process by chemical vapor deposition. The binary Bi₂Se₃ is transformed from rhombohedral to orthorhombic by substituting Sb on ～38% of the Bi sites. Pure Sb₂Se₃ is a topologically trivial band insulator with an orthorhombic crystal structure at ambient conditions, and it is known to transform into a topological insulator at high pressure. Angle‐resolved photoemission spectroscopy shows a topological surface state, while Sb doping also tunes the Fermi level to reside in the bandgap. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Nanoscale C‐Rich SixC1−x Bus/Ring Waveguide Based Cross‐Wavelength Data Converter

The carbon‐rich silicon carbide (C‐rich Si_xC_1?x) micro‐ring channel waveguide with asymmetric core aspect is demonstrated for all‐optical cross‐wavelength pulsed return‐to‐zero on‐off keying (PRZ‐OOK) data conversion. Enhanced nonlinear optical Kerr switching enables 12‐Gbit per second data processing with optimized modulation depth. The inverse tapered waveguide at end‐face further enlarges the edge‐coupling efficiency, and the asymmetric channel waveguide distinguishes the polarization modes. To prevent data shape distortion, the bus/ring gap spacing is adjusted to control the quality factor (Q‐factor) of the micro‐ring. Designing the waveguide cross section at 500 × 350 nm² provides the C‐rich Si_xC_1?x channel waveguide to induce strong transverse electric mode (TE‐mode) confinement with a large Kerr nonlinearity of 2.44 × 10^?12 cm² W^?1. Owing to the trade‐off between the Q‐factor and the on/off extinction ratio, the optimized bus/ring gap spacing of 1400 nm is selected to provide a coupling ratio at 5–6% for compromising the modulation depth and the switching throughput. Such a C‐rich Si_xC_1?x micro‐ring with asymmetric channel waveguide greatly enhances the cross‐wavelength data conversion efficiency to favor its on‐chip all‐optical data processing applications for future optoelectronic interconnect circuits.     

Specific features of the electronic,spin, and atomic structures of a topological insulator Bi<Subscript>2</Subscript>Te<Subscript>2.4</Subscript>Se<Subscript>0.6</Subscript>

The specific features of the electronic and spin structures of a triple topological insulator Bi₂Te_2.4Se_0.6, which is characterized by high-efficiency thermoelectric properties, have been studied with the use of angular- and spin-resolved photoelectron spectroscopy and compared with theoretical calculations in the framework of the density functional theory. It has been shown that the Fermi level for Bi₂Te_2.4Se_0.6 falls outside the band gap and traverses the topological surface state (the Dirac cone). Theoretical calculations of the electronic structure of the surface have demonstrated that the character of distribution of Se atoms on the Te–Se sublattice practically does not influence the dispersion of the surface topological electronic state. The spin structure of this state is characterized by helical spin polarization. Analysis of the Bi₂Te_2.4Se_0.6 surface by scanning tunnel microscopy has revealed atomic smoothness of the surface of a sample cleaved in an ultrahigh vacuum, with a lattice constant of ~4.23 Å. Stability of the Dirac cone of the Bi₂Te_2.4Se_0.6 compound to deposition of a Pt monolayer on the surface is shown.     

On possible deep subsurface states in topological insulators: The PbBi<Subscript>4</Subscript>Te<Subscript>7</Subscript> system

Theoretical studies of the bulk and surface electronic structures of PbBi₄Te₇ are presented. The PbBi₄Te₇ compound has a layered structure of five-layer (Bi₂Te₃) and seven-layer (PbBi₂Te₄) blocks alternating along the hexagonal axis. Analysis of the spin-orbit-induced inversion of the band gap edges indicates that this compound is a three-dimensional topological insulator. The topological properties of this compound are mainly determined by the PbBi₂Te₄ blocks. The Dirac cone is formed on the PbBi₄Te₇(0001) surface near the $ \bar \Gamma $ \bar \Gamma point for any block (either Bi₂Te₃ or PbBi₂Te₄) forming the surface. It is shown that the Dirac state can be localized not only on the surface but also deeply beneath it.     

Superconductivity and non-metallicity induced by doping the topological insulators Bi2Se3 and Bi2Te3

We show that by Ca doping the Bi₂Se₃ topological insulator, the Fermi level can be fine tuned to fall inside the band gap and therefore suppresses the bulk conductivity. Non-metallic Bi₂Se₃ crystals are obtained. On the other hand, the Bi₂Se₃ topological insulator can also be induced to become a bulk superconductor, with T_c∼3.8 K, by copper intercalation in the van der Waals gaps between the Bi₂Se₃ layers. Likewise, an as-grown crystal of metallic Bi₂Te₃ can be turned into a non-metallic crystal by slight variation in the Te content. The Bi₂Te₃ topological insulator shows small amounts of superconductivity with T_c∼5.5 K when reacted with Pd to form materials of the type Pd_zBi₂Te₃.     

SESAM‐free mode‐locked semiconductor disk laser

Experimental demonstration of semiconductor saturable absorber‐free mode‐locked optically pumped semiconductor disk laser is presented. The origin of pulsed operation is attributed to the intensity dependent Kerr lens effect arising in the semiconductor gain medium. Achieved results represent a novel method to mode‐lock this type of laser opening new application opportunities. The laser worked stably in both hard and soft aperture configurations. No semiconductor saturable absorber was used in the laser cavity and the operation was self‐starting. The laser was mode‐locked at 210 MHz repetition rate with 1.5 W average output power and 930 fs pulse width at 985 nm. A record high 6.8 kW peak power was achieved. Measured data is presented along with a discussion of the Kerr lens effect in the cavity.     

在预刻蚀的衬底上通过分子束外延直接生长出拓扑绝缘体薄膜的微器件

在利用光刻将拓扑绝缘体外延薄膜加工成微米尺寸结构的过程中,所用的各种化学物质会导致薄膜质量的下降.在实验中,通过在钛酸锶衬底上预先光刻出Hall bar形状的凸平台并以此为模板进行拓扑绝缘体(Bi x Sb1-x)2Te3薄膜的分子束外延生长,直接获得了薄膜的Hall bar微器件,从而避免了光刻过程对材料质量的影响.原子力显微镜和输运测量结果均显示该微器件保持了(Bi x Sb1-x)2Te3外延薄膜原有的性质.这种新的微器件制备方法有助于在拓扑绝缘体中实现各种新奇的量子效应,并可推广于其他外延生长的低维系统.     

Three- and two-dimensional topological insulators in Pb2Sb2Te5, Pb2Bi2Te5, and Pb2Bi2Se5 layered compounds

The electronic structure of ternary compounds Pb₂Sb₂Te₅, Pb₂Bi₂Te₅, and Pb₂Bi₂Se₅, which have a layered structure that consists of nine-layer atomic blocks separated by van der Waals gaps, has been theoretically studied. It has been shown that all studied compounds are three-dimensional topological insulators. The possibility of the existence of a two-dimensional topological insulator has been found in ultrathin (0001) Pb₂Sb₂Te₅ and Pb₂Bi₂Te₅ films. Oscillations of the ℤ₂ topological invariant with an increase in the film thickness have been observed in the latter compound.     

3D Flake‐Like Bi2Te3 with Outstanding Lightweight Electromagnetic Wave Absorption Feature

Flake‐like semiconductors with strong interfacial polarization exhibit excellent electromagnetic absorption properties. To the best of the knowledge, 3D flake‐like Bi₂Te₃ is never reported as effective MAMs (microwave absorption materials). Herein, it is first introduced the novel lightweight microwave absorption of 3D flake‐like Bi₂Te₃ synthesized by a simple hydrothermal process. Compared with the traditional research objects, the obtained Bi₂Te₃ possessed prominent absorbing ability at a rather thin thickness (1.0 mm), which will draw much attention to new‐materials for electromagnetic wave absorption.     

First‐principle calculations of optical properties of monolayer arsenene and antimonene allotropes

Recently a stable monolayer of antimony in buckled honeycomb structure called antimonene was successfully grown on 3D topological insulator Bi₂Te₃ and Sb₂Te₃, which displays novel semiconducting properties. By first‐principle calculations, we systematically investigate the electronic and optical properties of α‐ and β‐allotropes of monolayer arsenene/antimonene. The obtained electronic structures reveal that the direct band gap of α‐arsenene/antimonene is much smaller than the indirect band gap of their β‐counterpart, respectively. Significant absorption is observed in α‐antimonene, which can be used as a broad saturable absorber. For β‐arsenene/antimonene, the reflectivity is low and the absorption is negligible in the visible region when the polarization along the out‐plane direction, indicating that β‐arsenene/antimonene are polarizationally transparent materials.

     

Optically Injection‐Locked Mid‐IR Quantum‐Cascade Lasers: The Output‐Power–Modulation‐Bandwidth–Noise Trilogy

A comprehensive study on the output power, the modulation response, and the relative intensity noise (RIN) behavior of an optically injection‐locked mid‐infrared quantum‐cascade laser reveals that the modulation bandwidth and the output power are enhanced in the stable locking range, while the RIN of the slave laser is a superposition of the master and slave noise sources. Since the RIN level of the master laser can even take the lead, a design procedure is introduced to improve the main characteristics of a free‐running laser, including the RIN, the photon lifetime, the modulation bandwidth, and the bias current, using facet reflectivity tailoring. A figure of merit is defined and the RIN reduction of about 20 dB Hz^?1 is obtained for very low injection powers compared with the injection‐locked system before the design of master laser.     

Growth behavior of Bi2Te3 and Sb2Te3 thin films on graphene substrate grown by plasma‐enhanced chemical vapor deposition

A comparative study of the substrate effect on the growth mechanism of chalcogenide Bi₂Te₃ and Sb₂Te₃ thin films was carried out. Obvious microstructural discrepancy in both the as‐deposited Bi₂Te₃ and Sb₂Te₃ thin films was observed when grown on graphene or SiO₂/Si substrate. Bi₂Te₃ and Sb₂Te₃ thin films deposited on the graphene substrate were observed to be grown epitaxially along c‐axis and show very smooth surface compared to that on SiO₂/Si substrate. Based on the experimental results of this study, the initial adsorption sites on graphene substrate during deposition process, which had been discussed theoretically, could be demonstrated empirically.     

Electrical detection of spin-polarized current in topological insulator Bi1.5Sb0.5Te1.7Se1.3

Spin-momentum locked (SML) topological surface state (TSS) provides exotic properties for spintronics applications. The spin-polarized current, which emerges owing to the SML, can be directly detected by performing spin potentiometric measurement. We observed spin-polarized current using a bulk insulating topological insulator (TI), Bi_1.5Sb_0.5Te_1.7Se_1.3, and Co as the ferromagnetic spin probe. The spin voltage was probed with varying the bias current, temperature, and gate voltage. Moreover, we observed non-local spin-polarized current, which is regarded as a distinguishing property of TIs. The spin-polarization ratio of the non-local current was larger than that of the local current. These findings could reveal a more accurate approach to determine spin-polarization ratio at the TSS.     

Superconductivity of topological matters induced via pressure

By applying pressure on the topological insulator Bi₂Te₃ single crystal, superconducting phase was found without a crystal structure phase transition. The new superconducting phase is under the pressure range of 3 GPa to 6 GPa. The high pressure Hall effect measurements indicated that the superconductivity caused by bulk hole pockets. The high pressure structure investigations with synchrotron X-ray diffraction indicated that the superconducting phase is of similar structure to that of ambient phase structure with only slight change with lattice parameter and internal atomic position. The topological band structures indicate the superconducting phase under high pressure remained topologically nontrivial. The results suggested that topological superconductivity can be realized in Bi₂Te₃ due to the proximity effect between superconducting bulk states and Diractype surface states. We also discussed the possibility that the bulk state could be a topological superconductor.     

Majorana zero mode in the vortex of an artificial topological superconductor

Majorana fermion (MF), an exotic particle that is identical to its own antiparticle, was recently found in solid matter as a quasiparticle excitation, the Majorana zero mode (MZM), in the vortex of an artificial topological superconductor (TSC). This artificial TSC, first proposed by Fu and Kane in 2008, is a heterostructure made of a topological insulator Bi₂Te₃ and an s-wave superconductor NbSe₂. This paper will briefly review the experimental progresses based on the Bi₂Te₃/NbSe₂ heterostructure. All evidences are self-consistent and reveal that the MZM exists in the center of vortex. Those experimental results are also supported by theory. This finding is a milestone in the research of Majorana fermions in solid state physics and a starting point of MZM’s application in topological quantum computation.     

Weak antilocalization in thin films of the Bi<Subscript>2</Subscript>Te<Subscript>2.7</Subscript>Se<Subscript>0.3</Subscript> solid solution

A technology has been developed for the preparation of thin films of the Bi₂Te_2.7Se_0.3 solid solution through the thermal evaporation in a vacuum using the “hot-wall” method. The high quality of the thin films thus prepared has been confirmed by the X-ray diffraction and Raman scattering data. The electron transport has been investigated over wide ranges of temperatures (1.4–300 K) and magnetic fields (up to 8 T). It has been assumed that the observed weak antilocalization is associated with the dominant contribution from the surface states of a topological insulator. The dephasing length has been estimated.     

Non‐Hermitian Gauged Topological Laser Arrays

Stable and phase‐locked emission in an extended topological supermode of coupled laser arrays, based on concepts of non‐Hermitian and topological photonics, is theoretically suggested. A non‐Hermitian Su–Schrieffer–Heeger chain of coupled microring resonators is considered, and it is shown that application of a synthetic imaginary gauge field via auxiliary passive microrings leads to all supermodes of the chain, except one, to become edge states. The only extended supermode, that retains some topological protection, can stably oscillate suppressing all other non‐topological edge supermodes. Numerical simulations based on a rate equation model of the semiconductor laser arrays confirm stable anti‐phase laser emission in the extended topological supermode and the role of the synthetic gauge field to enhance laser stability.