Effect of alloying additions and atomic disordering on the physical properties of magnetic Ni<Subscript>2</Subscript>MnGa-based shape memory alloys

The effect of atomic disordering induced by melt quenching or severe plastic deformation via high-pressure torsion on the physical properties (thermal expansion coefficient, electrical resistivity, thermoelectric power, magnetization) of a stoichiometric Ni₅₀Mn₂₅Ga₂₅ alloy and nonstoichiometric Ni₅₀Mn_28.5Ga_21.5 alloys with 2 at % Cu or Co is studied in the temperature range 2 K ≤ T ≤ 900 K and the magnetic field range H ≤ 7 MA/m.     

Persistent spin splitting of a two-dimensional electron gas in tilted magnetic fields

The effect of atomic disorder on the electron transport and the magnetoresistance (MR) of Co₂CrAl Heusler alloy (HA) films has been investigated. We show that Co₂CrAl films with L2₁ order exhibit a negative value for the temperature coefficient of resistivity (TCR) in a temperature range of 10 < T < 290 K, and the temperature dependence of electric conductivity varies as T ^3/2 similarly to that of the zero-gap semiconductors. The atomic or the site disorder on the way of L2₁ → B2 → A2 → amorphous state in Co₂CrAl HA films causes the deviation from this dependence: reduction in the absolute value of TCR as well as decrease in the resistivity down to ϱ(T = 293 K) ∼ 200 μΩ cm in comparison to ϱ(T = 293 K) ∼ 230 μΩ cm typical for the Co₂CrAl films with L2₁ order. The magnetic-field dependence of MR of the Co₂CrAl films with L2₁ order is determined by two competing contributions: a positive Lorentz scattering and a negative s-d scattering. The atomic disorder in Co₂CrAl films drastically changes MR behavior due to its strong influence on the magnetic properties.     

Thickness dependence of the magnetic anisotropy of Fe layers separated by Al

Magnetic multilayers of ⁵⁷Fe with nominal thickness, T _nom, between 0.4 and 1.0 nm separated by 3.0 nm Al spacer layers were prepared by alternate deposition of the constituents in high vacuum. The samples were investigated at 4.2 K in external magnetic field. A fraction of Fe atoms corresponding to about 0.3 nm equivalent Fe-thickness was found to mix into the Al spacer. The extremely strong magnetic anisotropy observed for T _nom < 0.8 nm is attributed to Fe layers of approximately two atomic planes thick. The anisotropy decreases considerably after the building up of the third Fe atomic layer starts at T _nom = 0.8 nm, but full saturation was not achieved even for T _nom = 1 nm and 3 T magnetic field applied perpendicularly to the sample plane.     

Thermal conductivity of crystalline fullerite C60 in the simple cubic phase

The behavior of the thermal conductivity k(T) of bulk faceted fullerite C₆₀ crystals is investigated at temperatures T=8–220 K. The samples are prepared by the gas-transport method from pure C₆₀, containing less than 0.01% impurities. It is found that as the temperature decreases, the thermal conductivity of the crystal increases, reaches a maximum at T=15–20 K, and drops by a factor of ∼2, proportional to the change in the specific heat, on cooling to 8 K. The effective phonon mean free path λ _p, estimated from the thermal conductivity and known from the published values of the specific heat of fullerite, is comparable to the lattice constant of the crystal λ _p∼d=1.4 nm at temperatures T>200 K and reaches values λ_p∼50d at T<15 K, i.e., the maximum phonon ranges are limited by scattering on defects in the volume of the sample in the simple cubic phase. In the range T=25−75 K the observed temperature dependence k(T) can be described by the expression k(T)∼exp(Θ/bT), characteristic for the behavior of the thermal conductivity of perfect nonconducting crystals at temperatures below the Debye temperature Θ (Θ=80 K in fullerite), where umklapp phonon-phonon scattering processes predominate in the volume of the sample. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 8, 651–656 (25 April 1997)     

Electron mobility in compensated VPE GaAs films

Electron Hall mobilities were measured on a series of intentionally compensated vapor phase epitaxy (VPE) GaAs layers. Using Sn and Zn as dopants, compensation ratiosK=(N_D+N_A)/(N_D-N_A) as high as 50 were obtained. Already for samples with the lowestK values the 300 K mobilities are higher than the 77 K values. In the range 20<T<100 [K] the data may be represented by μ∼T ^α with α increasing from 0.6 to 1.1 with compensation. The experimental μ values are smaller than those predicted from current models in all cases. It appears that scattering at ionized impurities is the dominant process also at temperatures well above 77 K, and that this scattering process is quantitatively underestimated in current models.     

Investigation of thermal expansion,phase diagrams,and barocaloric effect in the (NH4)2WO2F4 and (NH4)2MoO2F4 oxyfluorides

The thermal expansion along the principal crystallographic axes of the (NH₄)₂WO₂F₄ and (NH₄)₂MoO₂F₄ oxyfluorides has been studied. The anomalous behavior of α _i (T) due to the phase transitions has been revealed at T ₁ = 271.4 K and T ₂ ≈ 180 K for the molybdate and at T ₁ = 201.5 K and T ₂ ≈ 161 K for the tungstate. The quantities dT/dp and dT/dσ _i , which characterize the dependence of the phase transition temperatures on the hydrostatic and uniaxial pressures, have been determined from analyzing the results of studies of the thermal expansion and heat capacity with the use of the Pippard relations. The p-T and α _i -T phase diagrams reflect different characters of the influence of the pressure on the stability of the initial and distorted phases of the oxyfluorides. The magnitudes of the extensive and intensive barocaloric effects determined in the vicinity of the structural phase transitions are as follows: ΔS _BCE varies from approximately −10 to −17 J/mol K and ΔT _AD ≈ 8−17 K for the molybdate and ΔS _BCE varies from approximately −10 to −17 J/mol K and ΔT _AD ≈ 8−13 K for the tungstate.     

Temperature dependence of surface impedance of Tl2Ba2CaCu2O8−δ and YBa2Cu3O6.95 single crystals measured in the microwave band

The real part R _s and the imaginary part X _s of the surface impedance Z _s=R _s+ iX _s of Tl₂Ba₂CaCu₂O_8−δ and YBa₂Cu₃O_6.95 single crystals have been measured with high precision at frequency ω/2π=9.4 GHz in the temperature range 0<T<140 K. In the Tl₂Ba₂CaCu₂O_8−δ crystal a linear temperature dependence R _s(T) has been found for T⩽50 K, and the magnetic field penetration depth λ(4.2 K)=X _s(4.2 K)/ω μ ₀≈3760 Å has been measured. Along with well known features of the function Z _s(T) in high-quality YBa₂Cu₃O_6.95 single crystals, such as the linearity of λ(T) and R _s(T) for T<T _c/3 and a maximum of R _s(T) at T∼T _c/2, the linearity range of λ(T) extends to T≃50 K, and this curve has a plateau in the range 60<T<85 K. The curve of R _s(T) in both the superconducting and normal states of YBa₂Cu₃O_6.95 is well described by a two-fluid model with the electron-phonon mechanism of quasiparticle relaxation. A formula describing the curve of λ ²(0)/λ ²(T) throughout the studied temperature range is also given. Zh. éksp. Teor. Fiz. 112, 2210–2222 (December 1997)     

Electrical conductivity and magnetic properties of La1 ? xCaxMn1 ? yFeyO3 ceramic samples (x = 0.67, y = 0, 0.05)

The temperature dependences of the magnetic susceptibility χ(T) and the electrical resistivity ρ(T) of ceramic samples of La_{1 − x} Ca _x MnO₃ with x = 0.67 (LCMO) and La_{1 − x} Ca _x Mn_{1 − y} Fe _y O₃ with x = 0.67 and y = 0.05 (LCMFO) are investigated in magnetic fields B = 50–10⁵ G and the temperature range T = 4.2–400 K. Both samples undergo a transition from the paramagnetic state to a state with charge (orbital) ordering (CO) at temperatures T _CO ≈ 272 K for LCMO and T _CO ≈ 222 K for LCMFO. The behavior of the paramagnetic phase in the temperature range 320–400 K for LCMO and 260–400 K for LCMFO is described by the Curie-Weiss law with effective Bohr magneton numbers p _eff = 4.83 μ_B (LCMO) and 4.77 μ_B (LCMFO), respectively. The disagreement between the observed positive Weiss temperatures (θ ≈ 175 K (LCMO) and θ ≈ 134 K (LCMFO)) and negative Weiss temperatures required for the antiferromagnetic ground state can be explained by the phase separation and transition to the charge-ordered state. The magnetic irreversibility for T < T _CO is accounted for by the existence of a mixture of the ferromagnetic and antiferromagnetic phases, as well as the cluster glass phase. At low temperatures, doping with iron enhances the frustration of the system, which manifests itself in a more regular behavior of the decay rate of the remanent magnetization with time. The temperature dependence of the electrical resistivity in the range of the charge-ordered phase conforms to the variable-range hopping model. The behavior of the electrical resistivity is governed by the complex structure of the density of localized states near the Fermi level, which includes a soft Coulomb gap Δ = 0.464 eV for LCMO and 0.446 eV for LCMFO. It is established that the ratio between the localization radii of charge carriers a for LCMFO and a _und for LCMO is a/a _und = 0.88. Original Russian Text ? V.S. Zakhvalinskiĭ, R. Laiho, T.S. Orlova, A.V. Khokhulin, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 1, pp. 61–68.     

Transport studies at the Mott transition of the two-dimensional organic metal κ-(BEDT-TTF)2Cu[N(CN)2]BrxCl1-x

The two-dimensional organic conductor κ-(BEDT-TTF)₂Cu[N(CN)₂]Br _x Cl_{1- x} undergoes a transition from an insulator to a superconductor upon substituting Cl by Br. We have performed in- and out-of-plane electric-transport measurements on the alloyed series with x = 20%, 40%, 70%, 80%, 85%, and 90% as a function of temperature in order to explore the bandwidth-controlled phase transition between the Mott insulator and the Fermi-liquid. All crystals exhibit a similar semiconducting behavior of ρ(T) from room temperature down to 100 K. Below approximately 50 K, a metal-to-insulator transition is found for compounds with x < 70%. Out of this Mott insulating state, magnetic order develops below T _N ≈ 25 K. The Br-rich samples cross a bad-metal regime before they become coherent metals and eventually superconducting at T _c ≈ 12 K. For these systems the resistivity at T _c ≤ T ≤ T ₀ reveals a ρ(T) ∝ T ² dependence associated with a strongly correlated Fermi-liquid, limited by some characteristic temperature T ₀. The conclusions are corroborated by data from microwave, magnetic and optical experiments.     

Effect of regimes of cooling in a magnetic field on the magnetization of a La0.9Sr0.1MnO3 single crystal

Magnetization measurements were performed on a lanthanum manganite La_0.9Sr_0.1MnO₃ single crystal in the temperature interval 4.2–300 K and magnetic field interval 50 Oe-55 kOe in two sample cooling regimes: 1) cooling down to 4.2 K in a high (55 kOe) magnetic field, and 2) cooling in a “zero” field. It is shown that the temperature dependences of the magnetization M(T) are substantially different in these regimes. Pronounced anomalies of M(T) were observed at temperatures T*=103 K and T _c =145 K. The first anomaly is attributed to a structural transition, while the second one corresponds to a ferromagnet-paramagnet phase transition. The magnetization of a La_0.9Sr_0.1MnO₃ single crystal in the cooling regimes studied shows typical “spin-glass” behavior. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 39–43 (10 July 1998)     

Near-ordering structural transitions in amorphous metal alloys

The temperature variations in the modulus of elasticity (Young’s modulus) E and internal friction Q ⁻¹ of the amorphous metal alloys Ti₅₀Cu_50−x Ni_x (5⩽x⩽20) are studied at temperatures of 300–800 K. There is an anomalous increase in E(T) at temperatures above T _x (which varies from 440 to 525 K, depending on the composition). When the amount of nickel in the alloy is high (x>12 at. %), a small peak shows up in Q ⁻¹(T). These effects are related to structural transitions in near-ordering regions (clusters). A model for structural relaxation of near ordering in amorphous alloys is proposed on the basis of these experiments. Fiz. Tverd. Tela (St. Petersburg) 40, 389–392 (March 1998)     

Magnetic properties and magnetic entropy change in Heusler alloys Ni50Mn35?xCuxSn15

The influence of Cu substitution for Mn on magnetic properties and magnetic entropy change has been investigated in Heusler alloys, Ni₅₀Mn_35−x Cu _x Sn₁₅ (x=2,5 and 10). With increasing Cu content from x=2 to x=5, the martensitic transition temperature, T _M , decreases from 220 K to 120 K. Further increasing Cu up to x=10 results in the disappearance of T _M . For samples Ni₅₀Mn₃₃Cu₂Sn₁₅ and Ni₅₀Mn₃₀Cu₅Sn₁₅, both martensitic and austenitic states exhibit ferromagnetic characteristics, but the magnetization of martensitic phase is notably lower than that of austenitic phase. The magnetization difference, ΔM, across the martensitic transition leads to a considerably large Zeeman energy, μ ₀ΔM⋅H, which drives a field-induced metamagnetic transition. Associated with the metamagnetic behavior, a large positive magnetic entropy change ΔS takes place around T _M . For the sample Ni₅₀Mn₃₃Cu₂Sn₁₅,ΔS reaches 13.5 J/kg⋅K under a magnetic field change from 0 to 5 T.     

Low-temperature properties of magnetic Ni50 + x Mn25 ? x + y Ga25 ? y shape memory alloys

The effect of atomic disordering and deviation from the Ni₂MnGa stoichiometric composition on the low-temperature properties of alloys with magnetically controlled shape memory effect is studied. The specific features of the magnetic, galvanomagnetic, and electrical properties of alloys with magnetically controlled shape memory effect are discussed. The specific features of the magnetic, galvanomagnetic, and electrical properties of alloys Ni₅₀Mn₂₅Ga₂₅, Ni₅₄Mn₂₁Ga₂₅, and Ni₅₀Mn_28.5Ga_21.5 in the temperature range 2 ≤ T ≤ 80 K under magnetic fields H ≤ 12 MA/m are studied. Original Russian Text ? N.I. Kourov, V.V. Marchenkov, V.G. Pushin, A.V. Korolev, E.B. Marchenkova, H.W. Weber, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 11, pp. 2037–2042.     

Electronic phase separation in TmBa2Cu4O8

The NQR spectra of Cu(2) in the superconductor TmBa₂Cu₄O₈ are studied at temperatures from 300 to 4.2 K. In analyzing the spectra it is assumed that the NQR line of each isotope contains two Gaussian components — narrow (n) and broad (b). It is discovered that the NQR frequencies have a minimum at the temperature T*=150 K. The frequencies of the components of the spectrum are close at temperatures from T* to 4.2 K and differ substantially at temperatures T>T*. Both components are broadened as the temperature decreases, but this broadening occurs especially rapidly at temperatures T<T*. The relative intensity of the narrow component I _n/(I _n+I _b) equals 1/6 for T=225−160 K, increases abruptly at T=T*, and remains constant (1/3) at temperatures T from 125 to 4.2 K. Analysis of the experimental data showed that the anomalous temperature dependences of the Cu(2) NQR spectra could be due to electronic phase separation (stratification) in the CuO₂ planes at temperatures T⩽T*. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 3, 214–219 (10 February 1996)     

On the effective Debye temperatures of the C60 fullerite

The effective Debye temperatures Θ_eff determined for solids by different physical methods have been analyzed and compared. Attention has been focused on the original parameter of the Debye theory of heat capacity, i.e., the translational calorimetric Debye temperature Θ _c ^t (0), and the X-ray Debye temperature Θ _x in the framework of the Debye-Waller theory for the C₆₀ fullerite. It has been established that the true Debye law T ³ is satisfied for the C₆₀ fullerite over a very narrow range of temperatures: 0.4 K ≤ T ≤ 1.8 K. For this reason, the experimental Debye temperatures Θ _c ^t (0) obtained for the C₆₀ fullerite by different authors in the range T > 4.2 K are characterized by a large scatter (by a factor of ∼5). It has been revealed that the value Θ _c ^t (0) = 77.12 K calculated in this paper with the use of the six-term Betts formula from the harmonic elastic constants $ \tilde C_{ijkl} $ \tilde C_{ijkl} of the C₆₀ single crystal in the limit T = 0 K is closest to the true Debye temperature. It has been demonstrated using the method of equivalent moments that the real spectral frequency distribution of translational lattice vibrations g(ω) for the C₆₀ fullerite deviates from a parabolic distribution. The effective Debye temperatures Θ_eff involved in applied problems of thermodynamics of crystals and elastic scattering of different radiations from lattice vibrations have been determined. The quantitative measure of anharmonicity of translational and librational lattice vibrations of the C₆₀ fullerite has been determined. This has made it possible to empirically evaluate the lattice thermal conductivity κ of the C₆₀ fullerite at T ≈ 300 K: κ(300) = 0.80 W (m/K), which is in good agreement with the experimental thermal conductivity κ_exp = 0.78 W (m/K) at T ≈ 250 K.     

Magnetic and transport properties of monocrystalline<Emphasis Type="Italic">Fe</Emphasis><Subscript>3</Subscript><Emphasis Type="Italic">O</Emphasis><Subscript>4</Subscript>

A monocrystal ofFe ₃ O ₄ is characterized by resistance, magnetoresistance and magnetic measurements in a temperature range from 4.2 K to 350 K and magnetic field-cycling from −9 T to 9 T. The resistance measurements revealed a metal-insulator Verwey transition (VT) atT _v =123.76 K with activation energy E=92.5 meV at T >T _v and temperature-substitute for the activation energy below the VT,T ₀=E/k _B ≈3800 K within 70 K–110K. The magnetotransport results independently verified the VT at 123.70 K, with discontinuous change in the magnetic moment ΔM≈0.21 ΔM≈0.21μ _B and resistance hysteresis, dependent on the magnetic field in a narrow temperature range of 0.4° around theT _v . The magnetic characterization established self consistentlyT _v as ≈123.67 K, the jump in the magnetization at the VT≈0.25μ _B and confirmed, that the magnetocrystalline anisotropy is the main microscopic mechanism responsible for the magnetization of the monocrystal (88%) with additional natural and imposed defects contributing as 12%.     

Kinetic phenomena in zero-gap semiconductors CuFeS<Subscript>2</Subscript> and CuFeTe<Subscript>2</Subscript>: Effect of pressure and heat treatment

Electrical resistivity ρ and Hal coefficient R are measured as a function of the temperature (T = 1.7−310 K) and the magnetic field (up to H = 28 kOe) in zero-gap semiconductor CuFeS₂ samples subjected to hydrostatic compression and under various heat-treatment conditions. At low temperatures, anomalies are observed in the kinetic effects related to the presence of ferromagnetic clusters: the magnetoresistance at T = 4.2 K and T = 20.4 K acquires a hysteretic character and thermopower α changes its sign at T < 15 K. The temperature dependence of conduction-electron concentration n in CuFeS₂ has a power form in the temperature range T = 14−300 K, which is characteristic of the intrinsic conductivity in zero-gap semiconductors. In CuFeS₂, we have n(T) ∝ T ^1.2; in isoelectron compound Cu_1.13Fe_1.22Te₂, we have n(T) ∝ T ^1.93. Heat treatment is found to affect the intrinsic conductivity of CuFeS₂, as the action of hydrostatic compression (carrier concentration changes); that is, the carrier concentration changes. However, a power form of the n(T) and ρ(T) dependences is retained.     

Manganese-doped ZnSiAs<Subscript>2</Subscript> chalcopyrite: A new advanced material for spintronics

A new spintronics material with the Curie temperature above room temperature, the ZnSiAs₂ chalcopyrite doped with 1 and 2 wt % Mn, is synthesized. The magnetization, electrical resistivity, magnetoresistance, and the Hall effect of these compositions are studied. The temperature dependence of the electrical resistivity follows a semiconducting pattern with an activation energy of 0.12–0.38 eV (in the temperature range 124 K ≤ T ≤ 263 K for both compositions). The hole mobility and concentration are 1.33, 2.13 cm²/V s and 2.2 × 10¹⁶, 8 × 10¹⁶ cm⁻³ at T = 293 K for the 1 and 2 wt % Mn compositions, respectively. The magnetoresistance of both compositions, including the region of the Curie point, does not exceed 0.4%. The temperature dependence of the magnetization M(T) of both compositions exhibits a complicated character; indeed, for T ≤ 15 K, it is characteristic of superparamagnets, while for T > 15 K, spontaneous magnetization appears which correspond to a decreased magnetic moment per formula unit as compared to that which would be observed upon complete ferromagnetic ordering of Mn²⁺ spins or antiferromagnetic ordering of spins of the Mn²⁺ and Mn³⁺ ions. Thus, for T > 15 K, it is a frustrated ferro- or ferrimagnet. It is found that, unlike the conventional superparamagnets, the cluster moment μ _c in these compositions depends on the magnetic field: ∼12000–20000μ_B for H = 0.1 kOe, ∼52–55μ_B for H = 11 kOe, and ∼8.6–11.0μ_B at H = 50 kOe for the compositions with 1 and 2 wt % Mn, respectively. The specific features of the magnetic properties are explained by the competition between the carrier-mediated exchange and superexchange interactions.     

Thermal conductivity of (VO)2P2O7 single crystals

Thermal conductivity ϰ of single-crystal (VO)₂P₂O₇ has been studied within the 4–300 K range. A break was found in the ϰ(T) relation about 200 K, in the region of the transition from diffuse antiferromagnetic ordering (200–4 K) to a classical paramagnet (T=200–300 K). In the low-temperature domain (4–200 K), one may expect an additional contribution to ϰ(T) from the magnon component of thermal conductivity. Fiz. Tverd. Tela (St. Petersburg) 40, 2093–2094 (November 1998)