Composition dependence of the glass transition temperatures of PdNiP and PtNiP glasses

Thermal properties of glassy PdNiP and PtNiP alloys have been measured as a function of the concentration of transition metals. The glass transiion temperature, T_g, of these alloys glasses exhibits a negative linear deviation with transition metal content - which is in contrast to the increasing T_g of binary glassy alloys with increasing metalloids.It is suggested that the suppression of the glass transition temperature of these glassy alloys may be attributed to the excess configurational entropy of disorder associated with a mixture of hard spheres differing in radius. In contrast, the increasing T_g of binary glassy alloys with the metalloid content may be associated with the short-range order resulting from strong interactions between metal and metalloid atoms.     

Thermoelectric power of AsSeTe glasses

The result of the measurement of the thermoelectric power of glasses in the As₂Se₃As₂Te₃ system are reported. The results indicate that towards the As₂Te₃ end of the composition, there is an anomalous increase in thermoelectric power, the origin of which is not clear. Polaron hopping seems to contribute to conductivity in tellurium rich glasses. Structural restrictions on polaron hopping, such as the availability of AsTeAsTe chains seems to be important in discussing transport behaviour.     

The kinetics of formation of A AuGeSi metallic glass

The glass-forming ability of a Au_0.778Ge_0.138Si_0.084 alloy is analyzed theoretically by computing a time-temperature-transformation curve which describes the time required to produce a barely detectable fraction of crystallization, at various temperatures. The calculation is based on an interpolated viscosity-temperature curve, this alloy being exceptional among metallic glass formers in that experimental viscous-flow data are available at both high and low temperatures. Allowing for uncertainties, the critical cooling rate for glass formation lies within the range 10⁶?10⁸ K/sec which is in satisfactory agreement with experimental estimates of cooling rates in splat quenching. This and previous comparisons for Ni and PdSi alloys suggest that the approach may have useful and general applicability to metallic glasses.     

Thermal expansion and density of glassy PdNiP and PtNiP alloys

Thermal expansion and density of (Pd_1?xNi_x)_0.80P_0.20 and (Pt_1?yNi_y)_0.75P_0.25 alloys in their various states have been measured from room temperature to the glass transition temperature T_g. The thermal expansion of the glassy alloys at room temperature varies linearly with x and y and is 10 to 20% higher than that of corresponding pure metals. The thermal expansion of the undercooled alloy liquids near T_g as well as the molar volume $\text{v}\text{?}$ deduced from the density of glasses in contrast exhibits a negative deviation with composition x and y.This behavior is in line with the previously reported negative deviation of the glass transition temperature of these glassy alloys with metal content and may be explained in terms of excess volume associated with a mixture of hard spheres.     

Mechanical damping of silver-containing SiAsChalcogenide glasses

Mechanical damping measurements were used to study the structural conditions responsible for the increase in thermal stability that has been observed when Ag and Se are substituted simultaneously in Si₃₅As_25?xAg_xTe_40?ySe_y glasses. Glasses containing Ag exhibited a mechanical damping peak whose magnitude was approximately proportional to the Ag content and which was absent in the more completely cross-linked Si₃₅As₂₅Te₄₀ base glass. This peak shifted to lower temperatures and split into two overlapping peaks with increasing Se content. The splitting of the peak has been tentatively attributed to phase separation which has been postulated to occur at higher Se contents.     

Transformation behavior of PdAuSi metallic glasses

The transformation behavior of roller-quenched amorphous Pd_0.82?xAu_xSi_0.18 and Pd_0.835?xAu_xSi_0.165 alloys, where x ? 0.10, after rapid heating to temperatures near to or above T_g, is reported. The calorimetrically determined glass (T_g) and kinetic crystallization (T_c) temperatures both increased with x up to x ≈ 0.04. With increasing x, at x ? 0.04, T_c decreased rapidly while T_g varied little. Binary Pd_0.82Si_0.18 alloys crystallized to an fcc phase without apparent composition segregation. The tendency to phase separate at T near T_g, as manifested by small- (SAXS) and large-angle X-ray scattering and calorimetry, increased with increasing Au substitution. Pd_0.8Au_0.035Si_0.165 alloy apparently phase separated by a nucleation and growth mechanism, with a growth rate limited by the melt viscosity, to form an fcc phase dispersed in an amorphous phase which later crystallized. Pd_0.74Au_0.08Si_0.18 alloy phase separated initially to two melts, each of which later crystallized in turn. The initial separation behavior was generally consistent with the predictions of the spinodal theory but with some deviation from Cahn's linear relation.     

Formation of glass in the GeSiS system

The formation of glass in the GeSiS system was investigated. After synthesis of material with the general formula Ge_1?xSi_xS_y, where x was chosen to be 0.05, 0.1, 0.2, 0.3 and y was in the range 1.28–3.6, cylindrical samples were prepared and used for the characterization of glass by means of DTA. It was found that the substitution of germanium with silicon does not lead to any expressive change of the glass transition temperature, crystallization and the onset of melting.     

Sensitivity of the photo-darkening effect in CuAsSe glasses

When CuAsSe glasses are irradiated, they exhibit higher concentrations of darkening than AsSe glasses. Since darkening depends on the composition, the darkening centers in CuAsSe glasses to be of the same kind as those in AsSe glasses, i.e. arsenic clusters. Concerning the kinetics of erasing, it was found that the activation energy and the rate constant of erasing in CuAsSe are almost equal to those in AsSe glasses, but for the kinetics of darkening, it was found that the activation energy of darkening is equal to that of AsSe but α₀, which is proportional to the number of latent darkening centers, and the darkening rate constant k₁ are about twice as high as the corresponding constants of AsSe glasses. This may be the reason for the greater darkening in CuAsSe glasses. The high value of α₀ was attributed to the generation of more AsAs bonds on the addition of Cu to the AsSe glass network. The high value of k₁ was attributed to the increase in efficiency of photo-decomposition because of the many impurity levels in the band gap and also because of the narrow optical energy gap in the CuAsSe glasses.     

Memory effect in CuAsSe glasses containing small amounts of Au

The Cu, As and Se contents of Au-containing CuAsSe glasses significantly affected both the resistivity in the memory state and the time required to reach the memory state, whereas the Au content affects only the latter. The main crystalline species formed in these glasses was a CuAsSe compound, and its formation was enhanced by the addition of Au. The role of Au in the memory effect was discussed on the basis of crystallization behavior of glasses.     

ESR study of Mn2+ in GeTe and GeTeSi glasses

The electron spin resonance spectra of Mn²⁺ ions have been studied in Ge_xTe_100?x with x = 15, 17.5 and 20, and Ge_20?xTe₈₀Si_x with 0 ?x? 20. All samples are found to exhibit six hyperfine lines centered at g = 4.3 with hyperfine interaction constant A = 56 × 10^?4cm^?1. The g = 4.3 line is interpreted as being caused by Mn²⁺ ions incorporated in the amorphous network and surrounded by four Te atoms in an arrangement of orthorhombic symmetry. Some of the samples of GeTe show a g = 2.0 line. This line also appears after heat treatment in air at temperatures above the glass transition temperature. It is concluded that the g = 2.0 line is caused by Mn²⁺ ions in phase separated microcrystalline or concentrated regions of MnO in the glass.     

Structure of amorphous GeSe thin films

Amorphous films of GeSe_0.7 and GeSe_2.4 have been examined by energy-filtered scanning electron diffraction and by electron microscopy. Radial distribution analysis of the GeSe_0.7 intensity curves indicates that the local atomic order of these films differs considerably from the distorted rocksalt structure of bulk crystalline GeSe. Radial distribution studies also indicate a change in the structure of GeSe_0.7 and GeSe_2.4 films supported on copper mesh as they are heated with an electron beam. Gross structural features are not observable in the electron micrographs of the amorphous films. This does not eliminate, however, the possibility of the presence of glassy phase separation on a fine scale in the heat-treated films.     

Glass formation and properties of chalcogenide systems XVIII. On glass formation in the system GePbSeTe

The glass formation range of the system GePbSeTe has been investigated. For selected series properties such as the mole volume, glass transition temperature and the electrical direct current conductivity are discussed with respect to their dependence on composition. For some series the results can be compared with the properties of glasses containing Sn instead of Pb. The change in the energy gap for the crystalline compounds SnSe, SnTe, PbSe and PbTe is reflected by the data of the Sn or Pb containing glasses.     

A study of the crystallization of two non-crystalline CuZr alloys

Two CuZr alloys, Cu-50 at% Zr and Cu-54 at% Zr, were splat quenched to the non-crystalline state using a piston and anvil device. The glass transition and crystallization temperatures, as well as the enthalpy releases observed during crystallization were measured using differential scanning calorimetry of as-splat specimens and specimens aged below T_g. Transmission electron microscopy and X-ray diffraction experiments were utilized to monitor phase and structural changes in the alloys as they were transformed to the crystalline state.The results of the investigation indicated that the non-crystalline to crystalline transformation of these two alloys in constant heating rate experiments above T_g was a two-step process. The initial step, which is associated with a large exothermic reaction, results in the appearance of crystallites in a matrix of non-crystalline material. The final step, associated with a smaller exothermic reaction, results in the total transformation of glass to the crystalline state and the formation of the equilibium crystalline phases.The effect of aging these splat-quenched non-crystalline alloys at temperatures below T_g was also investigated. It was determined from these experiments that crystallization does occur when the non-crystalline alloys are aged ～ 15°C below T_g. However, the incubation time for crystalline nucleus formation was found to be substantially greater for the Cu₅₀Zr₅₀ glass. Finally, it was determined that the thermal stability of the aged glass relative to the spontaneous crystallization observed during the constant heating rate experiments above T_g decreases as a function of aging time.     

The study of transformation kinetics of the amorphous PdSi alloys

The kinetics of transformation behavior of roller-quenched amorphous Pd₈₃Si₁₇ and Pd₈₀Si₂₀ alloys after linear and isothermal heating is reported. The transformation was examined with electron microscopy, electron diffraction and electrical resistivity measurement. The crystallization of amorphous alloys with 17 at% Si begins with metastable ordered fcc solid solution. The ordered fcc solution is transformed to a ordered metastable phase with, probably, orthorhombic structure. The crystallization of amorphous alloys with 20 at% Si begins by formation of spherulites with lamellar structure. Using electron diffraction we found that spherulites consist of two phases - orthorhombic Pd₃Si silicide and Pd-rich silicide. From resistivity measurements, activation energies of 28.5 kcal/mol for Pd₈₃Si₁₇ and 80 kcal/mol for Pd₈₀Si₂₀, respectively, were calculated.     

Studies of amorphous GeSeTe alloys (I): Preparation and calorimetric observations

We have used differential scanning calorimetry (DSC) to examine the thermally induced transformations of bulk and thin-film amorphous alloys within a large portion of the GeSeTe system. Most chalcogen-rich compositions showed a discontinuous increase of heat capacity when heated through the glass transition temperature T_G. The Ge-rich compositions, which could only be prepared as sputtered amorphous films, were invariably characterized by an irreversible exothermic crystallization process on heating, beginning at the crystallization temperature T_X. Values of T_g and T_X have been tabulated for all alloys investigated and the compositional dependence of T_g has been examined in the light of recent models for viscous flow in glass-forming chalcogenide systems. In addition, a region of liquid immiscibility has been observed in the vicinity of Ge₂₀Se₄₀Te₄₀ in which a GeSe₂-rich liquid phase segregates from a tellurium-rich liquid phase. The existence and limits of this immiscibility region have been rationalized on the basis of ionic perturbations to the covalent bonding. The segregation of a GeSe₂-rich liquid increases the concentration of GeSe bonds which are the strongest and most ionic of the six angle-bond types which can occur in this system.     

Relation between electrical and optical gaps of amorphous semiconductors in the SiAsTe system

Electrical and optical properties of semiconducting SiAsTe glasses have been investigated. Compositional dependences of the properties in the Si_xAs_yTe_z system are examined as a function of atomic percentage x (or y, z) of one element with parameters of constant atomic ratio y/z (or x/z, x/y) of the other two elements. A pre-exponential factor σ₀ in the dc conductivity formula is estimated to be $\text{(2.1 ± 0.6) × 10}{}^4\text{(Ω ·}\text{cm}\text{)}{}^{\mathrm{?1}}$, inependently of the compositions. A systematic relationship between the compositional changes in the electrical gap E_g(el) and optical gap E_g(op) has been found. The energy gaps increase linearly with increasing Si content and decreasing Te content, but are almost independent of As content. The relation between E_g(el) and E_g(op) is expressed by E_g(el) = 1.60 E_g(op) ? 0.15 in eV. On the other hand, the optical absorption coefficient α(Ω) near the band edge follows the empirical formula, $\text{α(Ω) = α}{}_0$ exp ($\text{h}\text{?}\text{Ω/E}{}_{\mathrm{<mtext>s</mtext>}}$). The experimentally determined factor E_s increases linearly with E_g(op) and is closely related to the energy difference between the two gaps. A tentative model to explain these experimental results is proposed by taking into account of the effect of the potential fluctuations in such disordered materials.     

Properties of heavily doped GDSi with low resistivity

Significant decrease in resistivity has been observed in glow-discharge-produced silicon (GDSi) containing 10¹⁹?10²¹ cm^?3 phosphorous atoms. At the highest doping level a resistivity of 0.01 ω cm at room temperature was obtained. The temperature dependence of the resistivity follows the form, $\text{? = ?}{}_0\text{exp}\text{(T}{}_0\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$, over a temperature range from 80–400 K. Optical absorption, which increased with wavelength and was roughly proportional to the conductivity, was observed in the longer wavelength side of the intrinsic absorption edge and it was ascribed to mobile charge carriers. Hall effect measurements have shown that μ_H of phosphorus doped GDSi is about 1 cm² V^?1s^?1 and has a normal (negative) sign.     

Drift mobilities in amorphous AsSeTe

The electron and hole drift mobilities in As_xSe_100?x?yTe_y (0 ? x ? 7.1, 0 ? y ? 20.9 at.%) evaporated thin amorphous films and their temperature dependence were measured by means of the time-of-flight technique. The electron mobility decreases with increasing As content, while the hole mobility decreases upon addition of 6.4 at.% Te, then remains almost similar on further addition of Te. These effects of As and Te on the drift mobilities of carriers were shown to be independent of each other.     

Electrical conductivity of GeTe glasses under hydrostatic pressure

The electrical conductivity of some GeTe bulk glasses has been measured between 10 and 80°C under hydrostatic pressure up to 3000 bar. The electrical conductivity (σ) of as-prepared, amorphous samples can be expressed by an equation: σ = A exp (?B/kT). For Ge₁₇Te₈₃ glass, the pressure dependences of the constants, A and B, are: (d ln A/dp) = ?3.2 × 10^?4 bar^?1 and (dB/dp) = ? 2.1 × 10^?5 eV · bar^?1. The results are analysed in terms of the low-mobility band model of Mott-CFO for amorphous semiconductors.