Stimulated emission in electron-beam-pumped ZnS · Mn

The dependence of emission spectra of ZnS · Mn on the electron beam current density at 78 and 300°K is studied. It is found that stimulated emission resulting from the intra-ion transition in Mn²⁺ arised at the current density $\text{～10}{}^{\mathrm{?4}}\text{A}\text{cm}{}^2$ and that its intensity is weakly temperature-dependent.     

The phonon-assisted photon-drag effect in a two-dimensional semiconductor quantum-well structure

The phonon-assisted photon-drag effect in a two-dimensional semiconductor quantum well structure is investigated. By making use of second-order perturbation theory and the classical Boltzmann equation we found, by considering both intrasubband and the intersubband electronic transitions, that the electric field generated by the photon-drag effect in a typical GaAs–AlGaAs two-dimensional system is enhanced by almost one order of magnitude as compared with that of a bulk system. Moreover, the results can qualitatively account for the observed absorption spectra due to intersubband electronic transitions occurring in GaAs quantum wells.     

The decay and saturation of the emission in a.c. EL ZnS:Mn thin films

The decay of the yellow emission of a.c. ZnS:Mn electroluminescent cells is faster at high brightness levels. A corresponding quenching of the brightness is seen. This quenching is observed at much lower current densities than would be expected from the Auger coefficient 2X10^-9 cm³ s^-1.     

Luminescence in ZnS: La and ZnS: (Mn,La) phosphors

The photo (PL) and electro (EL) luminescence in ZnS: MnLa and ZnS: La have been studied. The enhancement and quenching of emission bands have been observed on the simultaneous application of sinusoidal field and photons. The wave shape, voltage, frequency and temperature dependence of EL brightness have been reported. A study of the phosphorescence and thermoluminescence of these phosphors is also carried out and it is observed that the trap-depth changes slowly with temperature and activator concentration. An attempt has been made to calculate the trap depth by studying temperature dependence of EL brightness. The results are reported and discussed.     

ZnS:Mn2+/聚苯乙烯核壳及ZnS:Mn2+中空球的制备和光谱性质

采用超声化学沉积法制备了ZnS:Mn2+/聚苯乙烯核壳结构和ZnS:Mn2+空心球.产物分别用透射电镜、X射线衍射仪和光致发光谱进行了表征.透射电镜结果表明,在聚苯乙烯胶体微球表面覆盖了平均尺寸为9nm的ZnS:Mn2+纳米颗粒,X射线衍射结果进一步验证了这个结论.将核壳粒子在500℃灼烧除去PS核后,可以得到空心的ZnS:Mn2+微球,Mn2+的发射谱的峰位在540nm,与体相材料相比,蓝移了45nm,这可能是由于壳层结构引起Mn-O八面体畸变,进而导致能带结构变化引起的.     

ZnS:Mn摩擦发光特性的研究

本文报道了ZnS:Mn具有良好摩擦发光性能。研究了ZnS:Mn发光中心Mn^2 及其含量以及样品的灼烧温度、灼烧时间等条件对样品发光特性的影响。优化浓度配比和制备条件制备出了较高摩抢擦发光效率的ZnS:Mn摩擦发光材料。摩擦发光机理可能是由于机械能使ZnS:Mn的电子从基态激发到激发态所致,而具有较高的摩擦发光效率可能来源于ZnS:Mn具有较宽的激发能量范围。     

硫化锌纳米微晶锰掺杂最佳含量的一个简单的理论计算

介绍一个从晶体结构出发建立的晶体结构配位数与最佳掺杂含量关系的一个简单的理论表达式，对硫化锌纳米微晶锰掺杂最佳含量作出理论计算，定量计算的结果与实验数据相符合。该理论也适用于其他电子薄膜材料的最佳掺杂含量问题。     

Excited-state absorption spectra of ZnS : Mn

Absorption bands have been found at 655 and 830 nm in a Mn²⁺-doped ZnS crystal under intense optical excitation. From the close correlation to the orange fluorescence, these bands are ascribed to the transitions from the emitting state ${}^4\text{T}{}_1\text{(}{}^4\text{G)}$ of Mn²⁺. This observation of the excited-state absorption makes it possible for the first time to locate higher excited levels of impurity ions hidden behind the strong fundamental absorption of the host material by a direct optical absorption method. Assignments for the terminal states of the observed absorption transitions are discussed.     

Nonuniform electric field effect on phonon-assisted tunneling in semiconductors

Expressions for the phonon-assisted indirect tunneling probability in the presence of a nonuniform electric field due to two mechanisms are calculated explicitly. The first mechanism is a first order one in which an electron on one band scatters to another band with the emission of a phonon. The other mechanism is a second order process in which an electron in one band tunnels to an intermediate state in a higher band via the interband term in the Hamiltonian and then scatters to another band with the emission of a phonon. It is shown that the electric field nonuniformity enhances the indirect tunneling probability.     

Role of pure dephasing in the broadening of zero-phonon emission lines in ruby

A theoretical analysis is made of the homogeneous linewidth of the electronic Raman transition between ē and 2ā excited states of Cr³⁺ observed in optically pumped ruby, in comparison with the widths of the phosphorescence R₁ and R₂ lines. In particular, we consider the phenomenological correlation between the broadening processes of the ē and 2ā levels, implied by the experimental fact that the magnitude of the Raman linewidth is approximately equal to the average, rather than the sum, of the R₁ and R₂ linewidths. The origin of this correlation is shown to be the quenching of pure-dephasing processes, associated with elastic phonon scattering, of the ē ? 2ā transition, while the pure-dephasing rates of the phosphorescence transitions are comparable to the rates of population-relaxation (lifetime-broadening) processes, associated with inelastic phonon scattering.     

Afterglow of manganese centres in pulse-excited ZnS:Mn

The afterglow of self-activated and manganese centres in ZnS-Mn by excitation with a pulsed nitrogen laser is investigated. Assuming that a time-independent part of the excited “blue” centres returns to the ground state under energy transfer to the “yellow” centres, an equation describing the decay kinetics is derived. The comparison with the experimental data shows satisfactory agreement in the time interval up to 120 μs. A maximum in the afterglow curve arises within this limit.     

Combustion synthesis and photoluminescence of ZnS:Mn particles

An efficient process based on a solid-state combustion technique has been developed to produce high crystalline and micrometer sized particles of ZnS:Mn⁺² phosphor with sphalerite structure. The precursor mixture of 0.915Zn+S+0.05Mn+0.035ZnCl₂+kNaCl composition (where k is the mole number of NaCl) was combusted under the argon atmosphere followed by post-heat treatment procedure at 700 °C. It was shown that photoluminescence (PL) intensity of ZnS sample can be easily controlled through adjusting NaCl concentration. In the optimized reaction conditions ZnS samples have showed PL intensity almost comparable to that of a commercial one, despite the relatively low purity of precursor materials used. Many interesting phenomena such as high luminescent efficiency, pure cubic ZnS formation after the post-heat treatment and strong influence of Cl⁻ ion on PL intensity have been observed and discussed.     

Irradiation-induced luminescence enhancement effect of ZnS:Mn(2+) nanoparticles in polymer films

The effects of irradiation-induced luminescence enhancement by ZnS:Mn(2+) nanoparticles in poly(vinyl butyral) films are reported. The luminescence intensity increases several times when fresh samples are irradiated by a 248-nm excimer laser. The decay time also increases with exposure time. The increase in the initial intensity of the slow component of luminescence makes the main contribution to the enhancement effect. A tentative model is proposed in which the efficiency of the energy transfer to Mn(2+) ions increases with exposure. States at interfaces are expected to play an important role in this process.     

ZnS掺Mn的电子结构研究

 用自旋极化的LSD-LMTO（Local-Spin-Density Linear Muffin-Tin-Orbital Method）方法，对ZnS掺入Mn发光中心的电子结构进行了大型超原胞模拟计算。在自洽收敛的条件下，先对纯ZnS调节计算参数（原子球、空球占空比），使计算的带隙E_g=3.23 eV；然后用原子球替代方式自洽计算杂质密度在E_g中的相对位置，模拟计算了在六角结构ZnS中掺入不同浓度的Mn杂质后有关的杂质能级在E_g中的相对位置。计算结果表明：（1）单个缺陷的杂质能级性质与配位场理论结果相符合，直接用杂质态密度来表示；（2）掺入杂质的浓度对杂质能级位置的影响不大，这与实验结果相一致。     

Diffusion and trapping in ZnS:Mn electroluminescent thin films

This paper reports the analysis of a time resolved study concerning both diffusion and trapping in ZnS:Mn TFEL, as a function of the dopant concentration. In particular we show that, above 1%, the excitations most likely diffuse among manganese ions lying on fractal spaces before reaching a trapping center.     

Effects of ZnS:Mn/AlN multilayer structure on luminescent properties of nanostructured thin-film EL device

Effects of ZnS:Mn/AlN multilayer structure on luminescent properties of nanostructured (NS) thin-film electroluminescent (TFEL) device of which emission layer is a multilayer composed with ZnS:Mn layers and 0.7-nm-thick AlN interlayers were studied. The bandgap widening and the increased PL efficiency of Mn²⁺ 3d-3d transitions with a decrease in the ZnS:Mn single-layer thickness down to 5 nm were observed, which is ascribed to quantum confinement effects. Meanwhile, the multilayer with 2-nm-thick ZnS:Mn single-layers shows a drop of PL efficiency, indicating the presence of defective region just on AlN. The tendency of the luminous efficiency of the NS-TFEL device against the ZnS:Mn single-layer thickness is similar to the tendency found in the PL efficiency, indicating the importance of the ZnS:Mn/AlN interface for the device performance.     

核-壳结构的ZnS:Mn纳米粒子的荧光增强

采用反胶束方法制备了ZnS :Mn纳米粒子并对其进行了ZnS壳层修饰 ,采用发射光谱和激发光谱对其光学性质进行了研究。与未包覆的ZnS:Mn纳米粒子相比 ,核 壳结构的ZnS :Mn纳米粒子来自于Mn2 离子的 5 80nm的发光增强了数倍 ,归因于ZnS壳增加了Mn2 离子到纳米颗粒表面的距离 ,减弱了Mn2 离子向表面猝灭中心的传递。样品制备后 ,核 壳结构的ZnS :Mn纳米粒子在 5 80nm的发光随时间略有增强 ,激发光谱的位置未发生明显变化 ,而未包覆的ZnS:Mn纳米粒子在 5 80nm的发光显著增强 ,同时自激活发光减弱 ,激发光谱明显发生红移 ,说明未包覆的ZnS :Mn纳米粒子的尺寸随时间增大 ,而核 壳结构的ZnS :Mn纳米粒子尺寸基本不变。     

纳米荧光粉的余辉研究

用无机材料在室温下通过溶胶法制成了纳米ZnS:Mn荧光粉,立方晶形,平均粒径为3nm,它的橙色发光（峰值608nm,半宽75nm)亮度与同晶型（立方）的体ZnS:Mn荧光粉的亮度相同,而余辉缩短。在Nd:YAG四倍频266nm脉冲激光激发下,仔细对立方纳米,纯立方微米,纯六角微米ZnS:Mn荧光粉进行了余辉的对比测量,它们的余辉主要遵循指数衰减规律,其1／e余辉时间的结果如下：（1）纯立方纳米ZnS:Mn,两个指数衰减,余辉时间分别为186μs和1078μs,其幅度比为4：1,前者是主要的,决定了1／e余辉时间;（2）纯立方微米体ZnS:Mn:944μs,(3)纯六微米体ZnS:MN:1.2ms（还有幅度很小的极长余辉成分）,结果表明纳米ZnS:Mn荧光粉的光致发光余辉的确比对应的体材料（不管是六角还是立方）都短,但余辉缩短了几倍,而不是五个数量级。