The neutron diffraction study of liquid GeTe and As2Te3

The radial distribution analyses for GeTe and As₂Te₃ are made at temperatures above the melting point in the range of momentum transfer between 0.7 and 10.0 Å^?1 by the neutron diffraction technique. Furthermore, the local order in amorphous GeTe is determined by analyzing the intensity data of the electron diffraction of its thin film. The result for the amorphous film indicates that the local distribution of atoms in amorphous GeTe is not characteristic of the structure of its crystalline state. The shape of the peaks of the intensity curve for liquid GeTe differs from that for the amorphous and crystalline states. However, the short bond length and the small coordination number determined from liquid RDF suggest that the covalent-like bonding between nearest-neighbor atoms remains unbroken when melting. The general form of the structure factor for liquid As₂Te₃ is similar to that for the amorphous material reported previously. The position of the first peak of RDF in the liquid state is observed to be shifted to a shorter distance than the average of nearest-neighbor atoms in crystalline As₂Te₃. The structure of GeTe differs considerably between the crystalline, amorphous and liquid states, whereas the local order in the liquid As₂Te₃ is similar to that in the amorphous state but not in the crystalline state.     

Bulk and impurity infrared absorption in 0.5 As2Se30.5 GeSe2 glass

A study of infrared absorption in the 250–4000 cm^?1 region has been carried out for 0.5 As₂Se₃0.5 GeSe₂ glasses quantitatively doped with oxide impurity. The frequencies of the intrinsic 2- and 3-phonon absorption bands at 490 and 690 cm^?1 correspond well to those predicted from combinations of the high frequency bands in the first order IR and Raman spectra of As₂Se₃ and GeSe₂ glasses.Glasses doped with As₂O₃ exhibit the same oxide impurity absorptionbands as those doped with GeO₂. Unlike As₂Se₃ glass, at impurity concentrations up to 1000 ppm As₂O₃, 0.5 As₂Se₃0.5 GeSe₂ glass exhibits only one major oxide impurity species, characterized by absorption bands at 780 and 1260 cm^?1 and due to oxygen bonded to network Ge. The observation of a much weaker network AsO vibration band at 670 cm^?1 confirms that oxygen bonds preferentially to Ge in this glass. The same minor oxide species appears to determine excess IR absorption at the CO₂ laser wavelength of 10.6 μm in both As₂Se₃ and 0.5 As₂Se₃ 0.5 GeSe₂ glasses. The frequencies and intensities of absorption bands due to hydrogen impurities are also quite comparable for these two materials.     

Optical properties of thin films of system (As2Se3)80−x(As2Te3)x(SnTe)20 prepared by PLD

Thin amorphous films from system (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ were prepared by pulsed laser deposition (PLD) from their bulk glasses and their optical properties were studied by spectral ellipsometry. Spectral dependencies of refractive index, absorption and extinction coefficient and optical gap (1.41–1.66 eV for (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ with x = 20 resp. x = 0) were calculated from optical tansmittance, from ellipsometric data by Tauc method. High values of refractive index n₀ (2.49–2.60) and of non-linear χ⁽³⁾ coefficient of index of refraction (4.9–7.5 × 10⁻¹² esu for the glass (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ with x = 0 resp. x = 20) made studied thin films of system (As₂Se₃)_80−x(As₂Te₃)_x(SnTe)₂₀ promising candidates for application in optics and optoelectronics.     

Structural study of amorphous Al0.20As0.50Te0.30, Al0.10As0.40Te0.50 and Al0.10As0.20Te0.70 by x-ray diffraction (I)

An analysis of the atomic radial distribution function of Al_0.20As_0.30Te_0.30, Al_0.10As_0.40Te_0.50 and Al_0.10As_0.20Te_0.70 amorphous alloys obtained from quenching of the molten mixture of the elements was performed. A structure in which all the Al atoms are tetrahedrally bonded to the other types of atoms in the material, would satisfy the requirements of the experimental curve. Tetrahedral groups might be linked to each other by As and Te atoms, or directly through a Te or As atom belonging to more than one tetrahedra.     

Optical characterization of As2Se3-Ag4SSe-SnTe amorphous thin films

Amorphous thin films from the system As₂Se₃-Ag₄SSe-SnTe were prepared by thermal vacuum evaporation from the corresponding bulk glassy samples. The film structure and surface morphology were investigated by scanning electron microscopy and atomic force microscopy; the results revealed uniform, smooth and homogeneous coatings. The amorphous chalcogenide films are transparent in a wide spectral range as shown by transmission and reflection measurements in the VIS and NIR regions. The optical band gap was determined and its compositional dependence is discussed in terms of structural considerations and the formation of charged defect centers.     

Impurity effects of some metals on electrical properties of amorphous As2Se1Te2 films

Amorphous As₂Se₁Te₂ (a-As₂Se₁Te₂) films, into which Cu or Cd ions were doped by thermal diffusion below the glass transition temperature exhibited the increase of conductivity by several orders of magnitude. In addition, these samples exhibited enhanced photoconductivity and the activation type conduction. From the measurements of the thermoelectric power, it was found that Cu doped samples were p-type and Cd doped samples were n-type. The impurities was also studied by SIMS.     

Phase transitions and electrical properties of As2Te3

This study identifies and characterizes the phase transitions induced thermally in bulk amorphous and crystalline As₂Te₃. In addition, it examines the nature and the electrical properties of the various As₂Te₃ phases, and attempts to correlate the memory electrical switching exhibited by these materials with their phase transitions.     

Structure and bonding in the mixed chalcogenide system As2SxSe3−x

⁷⁵As Nuclear Quadrupole Resonance (NQR) lineshape measurements for the amorphous mixed chalcogenide system As₂S_xSe_3?x are reported. The line-shapes are asymmetric and approximately 8 MHz in width (full width at half maximum). The peak resonance frequency is observed to increase approximately linearly with x. The NQR results indicate the presence of mixed As₂(S, Se)₃ pyramidal structural units and are thus not consistent with models that predict the occurrence of anion subsite segregation. NQR measurements performed on crystalline As₂SSe₂ lend support to the structural model proposed for the glasses.     

Raman scattering of the mixed chalcogenide glass system As2SxSe3-x

Polarized room temperature Raman spectra of glassy As₂S_xSe_3-x for 0≦×≦3 have been measured. Spectra for crystalline As₂S₁Se₂ are reported. The polarization and intensity dependence upon composition are consistent with mixed pyramids of composition As₂S_nSe_3-n and preclude phase separation in the glassy system.     

The structure of liquid As2Se3 and GeSe2 by neutron diffraction

The liquid structures of As₂Se₃ and GeSe₂ have been investigated using the neutron diffraction patterns. In both cases the structure factor showed a low first peak maximum which follows a weak but apparent pre-peak at very low momentum transfer. It was also observed that the radial distribution function of both materials are characterized by the well-defined first neighbor shell because of the deep minimum on its right-hand side although in the liquid state. These results indicate that strong covalent bondings between unlike atoms in the solid state still remain when melting. Both the structure factor and the distribution curves of these alloys are, on the whole, similar to those in the amorphous phase which have already been examined. A slight difference in the coordination number, however, is found between amorphous and liquid phases of these materials.     

On a chaotic potential field in vitreous As2Se3

Some experimental results of the vitreous As₂Se₃ investigation (the photoconductivity spectrum of volume examples, the temperature dependence of the thermoelectric E.M.F., the shift of the optical edge under the temperature and pressure) may be explained by the use of fluctuations of an internal potential field. A hypothesis about the nature of chaotic potential field is proposed, which is based on a negligible magnitude of the gap deformation potential D_g = D_c ? D_v, where D_c and D_v are deformation potentials of band edges. By this hypothesis the fluctuations of the substance density in glass generate the chaotic potential field of magnitude about a half of the gap E_g, while the gap magnitude fluctuates only slightly within some per cent of E_g. It is shown that the displacement of the optical edge at As₂Se₃ amorphization may be a demonstration of the deformation nature of the chaotic potential field in this material.     

Structural study of amorphous Al0.20As0.50Te0.30, Al0.10As0.40Te0.50 and Al0.10As0.20Te0.70 by X-ray diffraction (II)

A spherical-shaped model of Al_0.20As_0.50Te_0.30, Al_0.10As_0.40Te_0.50 and Al_0.10As_0.20Te_0.70 amorphous alloys has been performed by the random Monte Carlo method. These models describe quite well the experimental radial distribution functions and abide by the expected coordination numbers apart from the threefold coordinated Te, of which an excess has appeared. The structures are formed, basically, of distorted tetrahedra around the Al atoms whose corners are occupied by As or Te atoms. Also, a separated phase model for Al_0.10As_0.20Te_0.70 alloy has been built taking into account the results of thermodynamical study on this amorphous alloy system. The fitting of this model was better than that of the model generated under the hypothesis of a continuous phase.     

Intrinsic and impurity infrared absorption in As2Se3 glass

A quantitative study of infrared absorption in the 250–4000 cm^?1 region of As₂Se₃ glasses doped with small amounts of As₂O₃ or purified by various procedures has been carried out with particular attention to absorption in the wavelength regions of the CO₂ and CO lasers. The dependence of the relative intensities of the oxide impurity bands in the 650–1340 cm^?1 region on the total amount of As₂O₃ added to the glass indicates the existence of three distinct oxide-impurity species. A number of higher-frequency impurity bands which are due to the presence of hydrogen in the glass and whose intensities are highly dependent on the glass-melting conditions have been observed and classified. Intrinsic multiphonon absorption in the 400–1100 cm^?1 region has been interpreted in terms of combination and overtone bands of the two highest-frequency fundamental vibrational modes. Absorption coefficients of As₂Se₃ glass in the 920–1090 cm^?1 CO₂ laser region are limited by intrinsic multiphonon absorption to values of around 10^?2 cm^?1. The lowest absorption coefficients measured in the 1700–2000 cm^?1 CO laser region were around 2 × 10^?3 cm^?1 and may contain contributions from hydrogen-impurity bands.     

The structure of Hg-doped As2Se3 glasses

The structure of the semiconducting glassy As₂Se₃Hg_x system was investigated in a composition range x = 0.005?0.12. An explanation of the anomalous behaviour of the macroscopic density is proposed, based on the analysis of radial electron density distribution curves. A formula is given which correlates quantitatively the magnitude of coordination spheres with the experimental macroscopic density.     

The electronic properties of glasses in the Cux(As0.4Se0.6)100−x system with x between 5 and 30

Data are presented on the dc conductivity, thermopower and optical absorption of glasses in the CuAs₂Se₃ system. The electronic properties of the alloys differ markedly from those of As₂Se₃, but variations in composition do not introduce significant changes in properties, until the atomic percent of copper is greater than 25. The results are interpreted in terms of small polaron transport.     

Effect of hydrostatic pressure on the elastic moduli of As2S3 and As2Se3 glasses at 195 and 296 K

Velocities of 30 MHz longitudinal and shear ultrasonic waves have been measured in As₂S₃ and As₂Se₃ glasses as a function of hydrostatic pressure up to 1.5 kbar at 195 K and 3 kbar at 296 K. The elastic stiffness moduli are found to have relatively large, positive, pressure dependences which are about the same at both temperatures for both glasses. This behavior is attributed to the weakness of bonding between layers comprised of AsS₃ and AsS₃ pyramids.Inspection of data for a variety of glasses reveals a correlation between the value of C_L/3C_T and whether the elastic moduli are increased or decreased by pressure. (C_L is the longitudinal modulus and C_T the shear modulus.)Using the pressure dependences of the elastic moduli obtained in the present work, it is found that volume change is responsible for most of the temperature dependences of the moduli. In addition elastic gammas are obtained which are consistent with thermal Grüneisen gammas at 12 K. The pressure dependence of the volume of As₂S₃ glass at 296 K is calculated using the present results in the Murnagham equation. Agreement with volumetric data of Weir is obtained.     

Low-temperature specific heat of amorphous and crystalline Te0.81Ge0.15As0.04

We have measured the specific heats of amorphous and crystalline specimens of Te_0.81Ge_0.15As_0.04 between 0.2 and 20 K, and of crystalline Te_0.93As_0.07 between 1 and 20 K. Amorphous Te_0.81Ge_0.15As_0.04 shows a low-temperature linear specific heat anomaly whose magnitude, 0.027 mJ/mol-K², is similar to that of other amorphous insulators. Crystalline Te_0.81Ge_0.15As_0.04 exists as a two-phase material comprised of GeTe and As-doped Te. The specific heat of this material is analyzed in terms of a weighted average of the properties of its two constituents.     

Crystallization of amorphous selenium and As0.005Se0.995

The effect of temperature on the crystallization kinetics of bulk amorphous selenium and the alloy As_0.005Se_0.995 has been studied using differential scanning calorimetry. A time-temperature-transformation (TTT) curve has been plotted from isothermal results over the temperature range 320 to 490 K, and shows the presence of two minima for both materials. Using the empirical Avrami expression for solid-state transformations, a number of kinetic parameters has been determined.     

X-ray photoelectron spectroscopic studies on Se/As2S3 and Sb/As2S3 nanomultilayered film

Photoinduced diffusion in Se/As₂S₃ and Sb/As₂S₃ nanomultilayered thin films are studied by X-ray photoelectron spectroscopy (XPS). The XPS measurements show the atomic movements during photoinduced diffusion in Se/As₂S₃ and Sb/As₂S₃ nanomultilayered film. The analysis of experimental data describes the nature of light induced changes in different structural units.     

Local structure and vibrational spectra of vAs2O3

We discuss the atomic displacements of the optically active vibrational modes of vitreous (v-)As₂O₃ through comparisons of the infrared (ir) and Raman response with the corresponding spectra of the two crystalline polymorphs, claudetite, a layer crystal similar to orpiment, and arsenolite, a molecular crystal based on the As₄O₆ molecule. We conclude from these comparisons that the structure of the glass is composed of $\text{AsO}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ pyramidal units that are corner connected to form a continuous random network. The character of the strong ir and polarized Raman modes in the vitreous form, suggests that the interconnection of these pyramidal units cannot be described by a random distribution of dihedral angles, but rather has peaks at angles characteristic of the different ordering in two-dimensional macromolecular layer basis of claudetite, and the As₄O₆ molecule. The comparisons are extended to v-As₂S₃ and vAs₂Se₃ where we conclude the dihedral angle distributions characteristic of an As₄O₆-like local geometry are less prevalent.