Structural and magnetic properties of Ni2MnIn Heusler thin films grown on modulation-doped InAs heterostructures with metamorphic buffer

This paper reports on the morphological, structural, magnetic, and magneto-optic properties of Ni₂MnIn Heusler films grown on InAs-high electron-mobility transistor structures (HEMT) with metamorphic buffers for spintronic applications. Similar to our previous results on the Ni₂MnIn/InAs (001) system, the Heusler layer is found to have a (110) orientation relative to the (001) InAs-HEMT surface. We observe almost equal spin-polarizations for Heusler films on (001) InAs-HEMT as well as on (001) InAs. In addition, we find further support for interfacial intermixing previously reported for the Ni₂MnIn/InAs (001) system. On the other hand, the Heusler/InAs-HEMT system shows distinct morphologic, structural, and magnetic properties as compared to the Ni₂MnIn/InAs (001) system. In particular, more rapid and complex plastic deformation effects resulting in a high surface density of pin-holes in the Heusler films are found. We report on complex mutual deformation effects between the Heusler films and the underlying InAs-HEMT structure. Furthermore, a hysteresis loop squareness close to 1 for a 50 nm Heusler film on InAs-HEMT is observed. We tentatively associate these phenomena with the higher mismatch strain of the Ni₂MnIn/InAs-HEMT system compared to Ni₂MnIn films grown on (001) InAs.     

完全Heusler合金Cr2ZrSb/Sc2FeSn(100)异质结的结构、电磁特性及电子性质

本文采用基于密度泛函理论的第一性原理计算,系统研究了完全Heusler合金Cr₂ZrSb/Sc₂FeSn(100)异质结中六种界面CrCr-ScFe-T、ZrSb-ScSn-T、CrCr-ScSn-B、ZrSb-ScFe-B、CrCr-ScFe-V和 ZrSb-ScSn-V的电磁特性及电子性质。结果表明,界面原子间的相互作用造成了界面间原子层的不均匀,导致界面层的力学失配率加大。与块体中的高自旋极化率相比,异质结的自旋极化率遭到不同程度的破坏。但是,ZrSb-ScFe-B界面保留了较高的自旋极化率值,通过Julliere模型预测该异质结在低温下隧道磁电阻值约为429.29%,在自旋电子学器件中具有潜在的应用前景。     

Filled SA phases in binary systems of terminal-nonpolar compounds (IV). Mixtures of biswallow-tailed compounds and nematogenic twin compounds

The phase diagrams of three binary systems of liquid crystals are presented whereby one component is a biswallow-tailed compound and the second component is a member of homologous twin compounds. The most important feature of the diagrams is the occurrence of induced S_A phases and reentrant nematic phases. The existence of the induced S_A phase can be interpreted by the special molecular structure of the mixing components.     

Vibrational spectra and structure of organophosphorus compounds

The infrared spectra of both CH₃OPSClF and CD₃OPSClF in the vapor phase have been recorded from 4000 to 33 cm^–1. The Raman spectra of the liquids have been recorded and a temperature study of the CD₃OPSClF spectrum has been completed. Two isomeric configurations are indicated from the low-temperature Raman spectra. The doublet due to the P=S stretching vibration has a separation of only 15 cm^–1. From the variation in the relative intensity of the doublet, an energy difference of –450 cal/mol was obtained for the two isomers. The fundamental vibrations are assigned on the basis of the band positions and isotopic shift factors. The assignments are compared to those previously given for the CH₃OPSCl₂ and CH₃OPSF₂ molecules.For part VIII,see Inorg. Chem.8, 2796 (1969).Taken in part from the thesis submitted by J. W. Clark to the Department of Chemistry for the Ph.D. degree, August 1968.We wish to thank Miss Ann Perez for recording the infrared spectra. Acknowledgement is also made to the United States Army Research Office, Durham, for the support of this research by Grant Number DA-ARO-D-31-124-G824.     

Hydrothermal synthesis of new compounds

The recent results on hydrothermal synthesis and growth of crystals are described. The phase diagrams of crystallisation for polycomponent systems are given. Crystallisation of flourides, borates, phosphates, silicates and germanates of 1-2-3-4 valent elements are discussed as well as the role of mineralizer and temperature in hydrothermal processes. The crystallographic characteristics of new compounds are given. Some data on single crystal growth are represented for such compounds as zincite, sphalerite, nepheline, aluminum phosphate and potassium titanyl phosphates.     

Liquid crystalline swallow-tailed compounds I

By reaction of di-n-alkyl 4-hydroxybenzylidene-malonates with different acid chlorides three homologous series of swallow-tailed compounds were synthesized. The products were characterized by microscopic and calorimetric investigations and show nematic and smectic behaviour. As X ray studies prove the relatively broad molecules are statistically antiparallel arranged within the smectic monolayers.     

Tetracycline and propolis incorporation and release by bioactive glassy compounds

This study compares the release of tetracycline and propolis incorporated into four silica-based bioactive glassy systems. The bioactive glasses, with composition (SiO₂)x(P₂O₅)y(CaO)z, were prepared using a sol–gel process at room temperature. Tetraethoxysilane (TEOS), triethylphosphate, and calcium chloride were used as Si, P, and Ca precursors, respectively. The quantities of tetracycline and propolis incorporated were 2% in weight. For delivery assays, the samples were individually immersed in deionized water and buffered with tris-hydroxymethyl amino methane, pH 7.4, and kept in water bath (37 °C) for thirty days. Aliquots were withdrawn and analyzed by ultraviolet spectrophotometry in the tetracycline (270 nm) and propolis (420 nm) wavelengths. For the glass–tetracycline compounds, it was observed that four days after release had started all samples had released about 90% of the total tetracycline concentration. In contrast, 90% of the propolis was released in about 30 days’ time. Sample characterization was made using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), Fourier transform infrared spectroscopic (FTIR), and thermogravimetry (TG).     

Syntheses and X-ray structures of new phenoxy imino compounds

Four new phenoxy imino compounds were synthesized, and the solid-state structures of 1–3 were determined by single-crystal X-ray diffraction study, giving crystallographic data as follows. 2-Acetyl-6-[1-(2,6-diisopropylphenylimino)ethyl]-4-methylphenol (1): a = 13.5893(5) Å, b = 10.5781(4) Å, c = 15.6778(4) Å, = 113.1804(18), P2₁/c. 2,6-[1-(2,6-Diisopropylphenylimino)ethyl]-4-methylphenol (2): a = 12.1909(5) Å, b = 16.3324(6) Å, c = 15.9456(7) Å, = 96.990(2), P2₁/c. 2-Acetyl-6-[1-(4-bromine-2,6-dimethylphenylimino)ethyl]-4-methylphenol (3): a = 7.5337(4) Å, b = 10.0457(5) Å, c = 12.6163(4) Å, = 90.139(3), = 104.003(3), = 106.485(2), P–1. Their molecular structures show that the 2,6-substituted phenyl ring is located approximately orthogonal to the hydroxyphenyl ring with the dihedral angle varying from 85.2 to 101.4.for X-ray Diffraction     

Heat capacity and lattice anharmonicity in CdBIVC chalcopyrite compounds

The heat capacity at constant pressure of CdSiP₂, CdGeP₂, CdSnP₂ and CdGeAs₂ is measured in the temperature range from 300 to 500 K. The anharmonic contribution to the heat capacity is evaluated and it is shown that the degree of lattice anharmonicity decreases with increasing atomic weight of the constituent atoms of the compounds. Comparing the temperature variation of the heat capacity and of the thermal expansion coefficient some conclusions are made regarding the interatomic potential in the A^IIB^IVC compounds.     

New compounds with re-entrant nematic phases

Some derivatives of the homologous series of 4-cyanophenyl-3-methyl-4-(4-n-alkoxycinnamoyloxy) benzoates and of 4-cyanophenyl-4-(4-n-alkoxy-α-methyl cinnamoyloxy) benzoates have been synthesises. The higher homologs of these series exhibit reentrant nematic phases at atmospheric pressure.     

MOMBE growth characteristics of antimonide compounds

This paper describes the MOMBE (metalorganic molecular beam epitaxy) growth characteristics of antimonide compounds using TMIn (trimethylindium), TEGa (triethylgallium) and TIBAl (triisobutylaluminium) as group III sources, and As₄, Sb₄, TEAs (triethylarsine) and TESb (triethylstibine) as group V sources. Large differences in the growth characteristics of GaAs and GaSb MOMBE are observed. These are explained, using a theoretical consideration of the growth mechanism, by the difference in the effective surface coverage of excess As and Sb atoms during the growth. The use of TEAs and TESb instead of As₄ and Sb₄ alters the growth rate variation of both GaAs and GaSb with substrate temperature (T_sub), which results from the interaction of alkyl Ga species with the alkyl radicals coming from the thermally cracked TEAs and TESb. The alkyl exchange reaction process is observed in the growth of AlGaSb using TIBAl and TEGa, where the incorporation rate of Al is suppressed by the coexistence of TEGa on the growth surface, in the low T_sub region. This is caused by the formation of an ethyl-Al bond which is stronger than the isobutyl-Al bond. The composition and the growth rate variations of InGaSb with T_sub are similar to those of InGaAs, which are closely related to the MOMBE growth process and are quite different from those of MBE (molecular beam epitaxy) and MOVPE (metalorganic vapor phase epitaxy) growth. In the MOMBE growth of InAsSb and GaAsSb using TEAs and TESb, the composition variation with T_sub is weaker than that of MBE. This is a superior point of MOMBE growth for the composition control. The electrical and optical properties of MOMBE grown films as well as the quantum well structures are also described.     

Anisotropic properties of two nematogenic compounds

The diamagnetic susceptibilities and optical polarizabilities of two materials that exhibit nematic liquid crystralline phases in the vicinity of room temperature are reported using a molecular vibration approach and a modified Lippincott δ function potential model. The diamagnetic susceptibilities calculated from polarizabilities are also reported.     

Stereochemistry of silicon in oxygen-containing compounds

Specific stereochemical features of silicon in oxygen-containing compounds, including hybrid silicates with all oxygen atoms of SiO_n groups (_n = 4, 5, or 6) entering into the composition of organic anions or molecules, are described by characteristics of Voronoi—Dirichlet polyhedra. It is found that in rutile-like stishovite and post-stishovite phases with the structures similar to those of СаСl₂, α-PbO₂, or pyrite FeS₂, the volume of Voronoi—Dirichlet polyhedra of silicon and oxygen atoms decreases linearly with pressure increasing to 268 GPa. Based on these results, the possibility of formation of new post-stishovite phases is shown, namely, the fluorite-like structure (transition predicted at ~400 GPa) and a body-centered cubic lattice with statistical arrangement of silicon and oxygen atoms (~900 GPa).     

Extended defects in III-V semiconductor compounds

A new class of defects characterized by inherent non-exponential capture and emission processes was observed. A theory – based on the potential barrier model – is proposed to describe the measured DLTS and capacitance transient data. It is argued that these defects are related to dislocations or dislocation generated lattice defects.