Frequency dependent smoothing of rough surfaces by laser deposition of ZrO<Subscript>2</Subscript>

The development of the surface roughness of amorphous ZrO₂ layers with different thicknesses, which were laser deposited on nanocrystalline Ag surfaces, was analyzed by atomic force microscopy. With increasing ZrO₂ layer thickness first the surface slightly roughens due to island growth, but above a layer thickness of about 30 nm it continuously smoothens. From the power spectral densities it is clear that the smoothing processes are frequency dependent. First the high-frequency surface features vanish before lower roughness frequencies are decreased. Although the starting roughness is only 1 nm, a ZrO₂ layer thickness of about 4 μm is necessary to smooth the long-wavelength surface features. From the decrease of the roughness with ZrO₂ layer thickness and the observed final spectral densities, the dominant smoothing mechanisms were identified as downhill currents, probably induced by the energetic ions impinging on the substrate surface during deposition. PACS 68.35.Ct; 68.37.Ps     

TiN/Al2O3纳米多层膜的共格外延生长及超硬效应

采用多靶磁控溅射法制备了一系列具有不同Al₂O₃调制层厚度的TiN/Al₂O₃纳米多层膜. 利用X射线能量色散谱、X射线衍射、扫描电子显微镜、高分辨透射电子显微镜和微力学探针表征了多层膜的成分、微结构和力学性能. 研究结果表明，在TiN/Al₂O₃纳米多层膜中，单层膜时以非晶态存在的Al₂O₃层在厚度小于1.5 nm时因TiN晶体层的模板效应而晶化，并与TiN层形成共格外延生长，相应地，多层膜产生硬度明显升高的超硬效应，最高硬度可达37.9 GPa. 进一步增加多层膜中Al₂O₃调制层的层厚度，Al₂O₃层逐渐形成非晶结构并破坏了多层膜的共格外延生长，使得多层膜的硬度逐步降低. 关键词： 2O₃纳米多层膜')" href="#">TiN/Al₂O₃纳米多层膜 外延生长 非晶晶化 超硬效应     

Formation of amorphous Al1−x Au x films as a consequence of low-temperature Al/Au-interface reactions in a multilayered system

Al/Au multilayers (average composition Al₂Au, individual layer thicknesses 1 nm Al and 0.71 nm Au) are prepared at 90 K by ion beam sputtering. The electrical resistance of the growing films is monitored in situ. From the results obtained in this way it can be concluded that interface reactions occur transforming the ultrathin layers into an amorphous phase, which is stable up to 255 K.For larger individual layer thicknesses (2.1 nm Au and 3 nm Al), the interface reaction into the amorphous state is incomplete. Based on a simple parallel-resistor model, one finds that the interface reaction into the amorphous phase is restricted to a thickness of less than 3.5 nm. The temperature dependence of the resistance of such thicker multilayers indicates the onset of interdiffusion of the yet unreacted material at T=200 K resulting in the crystalline Al₂Au-phase.     

非晶Si/SiO2超晶格的制备及其光谱研究

用磁控溅射方法在玻璃基底上制备了非晶Si/SiO₂超晶格.利用透射电子显微镜 (TEM) 和X射线衍射技术对其结构进行了分析,结果表明,超晶格中Si层大部分区域为非晶相,局域微区呈现有序结构,其厚度由1.8—3.2nm变化,SiO₂层厚度为4.0nm.并采用多种光谱测量技术,如吸收光谱、光致发光光谱和Raman光谱技术,对该结构的光学性质进行了系统研究.结果表明,随纳米Si层厚度的减小,光学吸收边以及光致荧光峰发生明显蓝移,Raman峰发生展宽,即观测到明显的量 关键词：     

The effect of deposition temperature on the intermixing and microstructure of Fe/Ni thin film

The physical vapour deposition of Ni atoms on α-Fe(001) surface under different deposition temperatures were simulated by molecular dynamics to study the intermixing and microstructure of the interfacial region. The results indicate that Ni atoms hardly penetrate into Fe substrate while Fe atoms easily diffuse into Ni deposition layers. The thickness of the intermixing region is temperature-dependent, with high temperatures yielding larger thicknesses. The deposited layers are mainly composed of amorphous phase due to the abnormal deposition behaviour of Ni and Fe. In the deposited Ni-rich phase, the relatively stable metallic compound B₂ structured FeNi is found under high deposition temperature conditions.     

Structure and optical properties of ZnSe/SiO<Subscript>2</Subscript> layered nanocomposites

Structure and optical properties of ZnSe/SiO₂ layered nanocomposites obtained using microwave magnetron sputtering have been studied. The nanocomposites are X-ray amorphous at relatively small thicknesses of the zinc selenide layers. When the thickness of the zinc selenide layers exceeds 20 Å, ZnSe/SiO₂ films contain SiO₂ amorphous phase and zinc selenide cubic nanocrystallites. It has been demonstrated that the thickness of zinc selenide layers affects the microstresses, refractive index, and band gap.     

Investigations of the sorption behaviour of amorphous nitrogen-rich carbon nitride films as sensitive layers for cantilever-based chemical sensors

We present investigations of the sorption behaviour of amorphous nitrogen-rich carbon nitride films (CN_x) towards water vapour and volatile organic compounds, for example methanol, ethanol, i-propanol and acetone, in order to evaluate their potential as sensitive layers for cantilever-based chemical sensor applications. The CN_x films were deposited by inductively coupled plasma chemical vapour deposition (ICP-CVD) utilizing transport reactions from a solid carbon source. In order to study the influence of the thickness of the sensitive layer on its sensitivity and selectivity, two series of cantilevers coated with 120 nm and 240 nm CN_x films were prepared. We found that the variation of the film thickness affected the sorption process of the CN_x film quantitatively as well as qualitatively. For thin films (120 nm), the sensor dynamic responses (frequency shift) increased with increasing molecular weight of the analytes. The largest responses were observed towards acetone and i-propanol ; here, the cantilever acted as a resonant microbalance. When the film thickness was increased from 120 to 240 nm, the analytes with higher dipole moments caused stronger response signals. In this case we observed, for example, an increase of the sensitivity towards methanol by a factor of more than three. The performance of the cantilever-based sensors functionalised with CN_x coatings was compared to that of organic polymers, and the observed peculiarities were explained by the chemical nature of the sensitive materials. PACS 81.05.-t; 85.85.+j; 07.07.Df     

Morphology and the magnetic and conducting properties of heterogeneous layered magnetic structures [(Co45Fe45Zr10)35(Al2O3)65/a-Si:H]36

The morphology and the magnetic and conducting properties of an amorphous multilayer nanosystem [(Co₄₅Fe₄₅Zr₁₀)₃₅(Al₂O₃)₆₅/a-Si:H]₃₆ consisting of (Co₄₅Fe₄₅Zr₁₀)₃₅(Al₂O₃)₆₅ magnetic layers and semiconducting hydrogenated amorphous silicon (a-Si:H) layers of various thicknesses have been studied. Using a combination of methods (including polarized neutron reflectometry and grazing incidence small-angle X-ray scattering), it is shown that the magnetic and electrical properties of these multilayer structures are determined by their morphology. It is established that the magnetization and electric resistance of a sample is a nonmonotonic function of the a-Si:H layer thickness. Both characteristics are at a minimum for a structure with a semiconductor layer thickness of 0.4 nm. Samples with silicon layer thicknesses below 0.4 nm represent a three-dimensional structure of Co₄₅Fe₄₅Zr₁₀ grains weakly ordered in space, while in samples with silicon layer thicknesses above 0.4 nm, these grains are packed in layers alternating in the vertical direction. The average lateral distance between nanoparticles in the layer plane has been determined, from which the dimensions of metal grains in each sample have been estimated.     

Electron scattering characteristics of polycrystalline metal transition films by in-situ electrical resistance measurements

In-situ electrical resistance measurements were performed to obtain the scattering characteristics of very thin polycrystalline metal transition magnetic alloys grown by ion beam deposition (IBD) on specific underlayers. The experimental curves show size effects at small film thicknesses and important differences between Co₈₅Fe₁₅ and Ni₈₁Fe₁₉ thin layers grown on identical underlayers of Ta70 Å/Ru13 Å. The largest difference was observed in Ni₈₁Fe₁₉ films grown on underlayers of amorphous Ta70 Å. The experimental curves of electrical resistivity/conductivity variation with layer thickness were well fit within the Mayadas and Shatzkes (M-S) model, assuming specific formulations for grain growth with layer thickness.     

Preparation of dielectric mirrors from high-refractive index contrast amorphous chalcogenide films

We report the preparation of planar 15-layer dielectric mirrors by a thermal evaporation of alternating high refractive index contrast amorphous chalcogenide Sb-Se and Ge-S layers, exhibiting a high-reflection band around 1.55 μm. The layer deposition quality and the thickness accuracy of such prepared chalcogenide multilayers were then checked using transmission electron microscopy. The layer thickness deviation of chalcogenide layers did not exceed ∼7 nm in comparison with the desired thicknesses. The width of Sb-Se/Ge-S layer boundary was approximately ∼3 nm, which is in good agreement with the surface roughness values of thermally evaporated Sb-Se and Ge-S single layers. The optical properties of the prepared 15-layer dielectric mirrors were consistent in temperature range of 20-120 °C; however, at higher temperatures there started apparent structural changes of Sb-Se films, which were followed by their crystallization. Excellent optical properties of chalcogenide materials in the infrared range make them interesting for applications, e.g., in optics and photonics.     

Mössbauer and TDPAC Studies on Fe/Mo Multilayers

Hyperfine fields at Fe and Mo layers in polyimide/Fe(10 nm)/[Mo(1.1 nm)/Fe(2.0 nm)]₁₂₀ and [Mo(1.3 nm) /Fe(2.0 nm)]₁₂₀ multilayers prepared by the electron-beam evaporation technique were measured at room-temperature by Mössbauer spectroscopy and perturbed-angular-correlation spectroscopy. The hyperfine fields in the Fe layers do not show a clear dependence on the Mo layer thickness. On the other hand, the hyperfine fields in the Mo layers show different magnetic structures in these samples. The difference suggests a variation of electron spin polarization in the Mo layers.     

Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells

We report on continuous-wave laser induced crystallisation processes occurring in Si/SiO₂ multiple quantum wells (MQW), prepared by remote plasma enhanced chemical vapour deposition of amorphous Si and SiO₂ layers on quartz substrates. The size and the volume fraction of the Si nanocrystals in the layers were estimated employing micro-Raman spectroscopy. It was found that several processes occur in the Si/SiO₂ MQW system upon laser treatment, i.e. amorphous to nanocrystalline conversion, Si oxidation and dissolution of the nanocrystals. The speed of these processes depends on laser power density and the wavelength, as well as on the thickness of Si-rich layers. At optimal laser annealing conditions, it was possible to achieve ∼100% crystallinity for 3, 5 and 10 nm thickness of deposited amorphous Si layers. Crystallization induced variation of the light absorption in the layers can explain the complicated process of Si nanocrystals formation during the laser treatment.     

DLC coating of textile blood vessels using PLD

Textile blood vessels with a length of 30 cm were coated with amorphous diamond-like carbon (DLC) layers with thicknesses up to 200 nm. The layers were created by pulsed laser deposition in vacuum or argon ambient. The percentage of sp³ carbon was evaluated using X-ray photoelectron spectroscopy, X-ray excited Auger electron spectroscopy and Raman spectroscopy. Depending on the deposition conditions the sp³ content varied from ∼40% to 60%. The adhesion of the DLC layers to the textile vessels was checked. The preliminary biocompatibility results from in vivo tests with sheep are also given.     

TiN/SiO2纳米多层膜的晶体生长与超硬效应

高硬度的含氧化物纳米多层膜在工具涂层上具有重要的应用价值.研究了TiN/SiO2_{2纳米多 层膜的晶体生长特征和超硬效应.一系列具有不同SiO22和TiN调制层厚的纳米多 层膜采用多 靶磁控溅射法制备；采用x射线衍射、x射线能量色散谱、高分辨电子显微镜和微力学探针表 征了多层膜的微结构和力学性能.结果表明，虽然以单层膜形式存在的TiN和SiO22分别形成 纳米晶和非晶结构，它们组成多层膜时会因晶体生长的互促效应而呈现共格外延生长的结构 特 关键词： 2纳米多层膜')" href="#">TiN/SiO22纳米多层膜 外延生长 非晶晶化 超硬效应}     

Formation and magnetic properties of the silicon-cobalt interface

Formation of the Si/Co interface and its magnetic properties have been studied by high-resolution photoelectron spectroscopy with synchrotron radiation. The experiments have been performed in situ in superhigh vacuum (5 × 10^?10 Torr) with coating thicknesses up to 2 nm. It has been found that, in the initial stage of silicon deposition on the surface of polycrystalline cobalt maintained at room temperature, ultrathin layers of the Co₃Si, Co₂Si, CoSi, and CoSi₂ silicides are formed. The three last phases are nonmagnetic, and their formation gives rise to fast decay of magnetic linear dichroism in photoemission of Co 3p electrons. At deposition doses in excess of ～0.4 nm Si, a film of amorphous silicon grows on the sample surface. It has been established that the Si/Co interphase boundary is stable at temperatures up to ～250°C and that further heating of the sample brings about escape of amorphous silicon from the sample surface and initiates processes involving silicide formation.     

TiN/TiB2异结构纳米多层膜的共格生长与力学性能

采用多靶磁控溅射法制备了一系列具有不同TiB₂调制层厚度的TiN/TiB_{2纳米多层膜.利用x射线衍射仪、高分辨电子显微镜和微力学探针研究了TiB2层厚变化对多层膜生长结构和力学性能的影响.结果表明，在fcc-TiN层(111)生长面的模板 作用下，原为非晶态的TiB2层在厚度小于2.9nm时形成hcp晶体态，并与fcc-TiN 形成共格外延生长；其界面共格关系为{111}TiN//{0001}TiB2，〈110〉TiN//〈1120〉TiB2.由于共格界面存在晶格失配 度，多层膜中形成拉、压交变的应力场，导致多层膜产生硬度和弹性模量升高的超硬效应， 最高硬度和弹性模量分别达到46.9GPa和465GPa.继续增加TiB2层的厚度，TiB2形成非晶态并破坏了与TiN层的共格外延生长，多层膜形成非晶TiN层和非晶TiB< sub>2层交替的调制结构，其硬度和弹性模量相应降低. 关键词： 2}纳米多层膜')" href="#">TiN/TiB₂纳米多层膜 共格生长 晶体化 力学性能     

Si3N4在h-AlN上的晶体化与AlN/Si3N4纳米多层膜的超硬效应

采用反应磁控溅射法制备了一系列具有不同Si₃N₄层厚度的AlN/Si₃N₄纳米多层膜,利用X射线衍射仪、高分辨透射电子显微镜和微力学探针表征了多层膜的微结构和力学性能.研究了Si₃N₄层在AlN/Si₃N₄纳米多层膜中的晶化现象及其对多层膜生长结构与力学性能的影响.结果表明,在六方纤锌矿结构的晶体AlN调制层的模板作用下,通常溅射条件下以非晶态存在的Si₃N₄层在其厚度小于约1nm时被强制晶化为结构与AlN相同的赝形晶体,AlN/Si₃N₄纳米多层膜形成共格外延生长的结构,相应地,多层膜产生硬度升高的超硬效应.Si₃N₄随层厚的进一步增加又转变为非晶态,多层膜的共格生长结构因而受到破坏,其硬度也随之降低.分析认为,AlN/Si₃N₄纳米多层膜超硬效应的产生与多层膜共格外延生长所形成的拉压交变应力场导致的两调制层模量差的增大有关. 关键词： 3N₄纳米多层膜')" href="#">AlN/Si₃N₄纳米多层膜 外延生长 赝晶体 超硬效应     

Effect of Ta buffer and NiFe seed layers on pulsed-DC magnetron sputtered Ir20Mn80/Co90Fe10 exchange bias

A systematic investigation has been done on the correlation between texture, grain size evolution and magnetic properties in Ta/Ni₈₁Fe₁₉/Ir₂₀Mn₈₀/Co₉₀Fe₁₀/Ta exchange bias in dependence of Ta buffer and NiFe seed layer thickness in the range of 2-10 nm, deposited by pulsed DC magnetron sputtering technique. A strong dependence of 〈1 1 1〉 texture on the Ta/NiFe thicknesses was found, where the reducing and increasing texture was correlated with exchange bias field and unidirectional anisotropy energy constant at both NiFe/IrMn and IrMn/CoFe interfaces. However, a direct correlation between average grain size in IrMn and H_ex and H_c was not observed. L1₂ phase IrMn₃ could be formed by thickness optimization of Ta/NiFe layers by deposition at room temperature, for which the maximum exchange coupling parameters were achieved. We conclude finally that the coercivity is mainly influenced by texture induced interfacial effects at NiFe/IrMn/CoFe interfaces developing with Ta/NiFe thicknesses.     

Influence of thickness on the domain structure of barium-strontium-titanate films on MgO substrates

Ba_0.8Sr_0.2TiO₃/MgO(001) heterostructures are studied using atomic-force spectroscopy in several modes (the contact and semicontact modes and that of piezoelectric response) to obtain information on the relief and the distribution of the electric potential on the surface. Based on data obtained for films with different thicknesses, the correlation between the domain sizes and orientations and the film thickness and the surface relief is established. It is shown that the films with thicknesses less than 36 nm contain only aa domains whose dimensions decrease with increasing film thickness. The films with thicknesses greater than 36 nm contain only c domains whose dimensions increase with increasing film thickness.