Thermal and electrical properties of glass-ceramics based on lithium heptagermanate

Glass-ceramic samples based on lithium heptagermanate Li₂Ge₇O₁₅ have been prepared by rapid quenching and subsequent heat treatment. The calorimetric measurements have revealed that Li₂Ge₇O₁₅ crystallizes from the glass phase in two stages. An intermediate state is characterized by a significant increase in the electrical conductivity of the glass-ceramic materials.     

Effect of ionic liquid incarceration during free radical polymerization of PMMA on its structural and electrical properties

The thin film of poly(methyl methacrylate) (PMMA) has been widely studied as host in a polymer electrolyte system due to its good mechanical stability towards lithium electrode. However, the brittle property of this film creates additional resistance for the ionic conduction. The addition of ionic liquid (IL) has been noticed to improve the brittleness of the film. In addition, its ionic conductivity can also be enhanced, but no free standing film can be obtained when higher amount of IL was added. Therefore, in this study, 1-methyl-3-pentamethyldisiloxymethylimidazolium bis(trifluoromethylsulfonyl)imide,[(SiOSi)C₁C₁im][NTf₂], was incarcerated during free radical polymerization of MMA. Interestingly, this newly synthesized PMMA (PMMA_IL) gives a flexible and transparent film with ionic conductivity of ～10^?7 S/cm at room temperature. The structural properties of this PMMA_IL were further investigated using Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), and optical microscope (OM).     

基于卷积法TV模型的锥束CT散射校正方法

为了解决CT图像中散射伪影问题,提出并使用修正的泊松分布函数作为散射函数,然后利用卷积模型生成多个散射基图像,将基图像与原始重建图像的线性组合作为最终重建图像,最后,通过使重建图像的全变分函数最小求取线性组合系数最优解。该算法具有计算复杂度小、能够灵活应用于不同的成像对象的特点。实验结果表明,算法能够有效抑制散射导致的杯状和黑色带状伪影,提高图像对比度。     

基于卷积法TV模型的锥束CT散射校正方法

为了解决CT图像中散射伪影问题,提出并使用修正的泊松分布函数作为散射函数,然后利用卷积模型生成多个散射基图像,将基图像与原始重建图像的线性组合作为最终重建图像,最后,通过使重建图像的全变分函数最小求取线性组合系数最优解。该算法具有计算复杂度小、能够灵活应用于不同的成像对象的特点。实验结果表明,算法能够有效抑制散射导致的杯状和黑色带状伪影,提高图像对比度。     

基于multisine激励与整周期采样的多频电阻抗成像系统设计

本文从周期信号的整周期采样无频谱泄露这一原理出发,提出基于multisine信号的整周期采样理论,从理论上推导出满足multisine整周期采样的采样率设置条件,构建了基于FPGA+数模转换器+模数转换器的整周期采样实现方法,研制了一种基于multisine激励和整周期采样的新型多频电阻抗成像(mfEIT)系统;设计了胡萝卜棒+黄瓜棒的双目标成像模型,并进行了多频时差成像和频差成像实验.实验表明,本mfEIT系统能够在一个基波周期(1 ms)内实现20个频率点(2—997 kHz)多目标组织边界的全频阻抗测量,成像结果可区分具有不同电特性生物组织的结构与位置.本文提出的基于multisine信号的整周期采样理论及其实现方法,只需一个multisine基波周期即可完成一次全频阻抗测量,为研制高速mfEIT系统奠定了理论和技术基础.     

Mechanical and electrical properties of supersaturated Mg based alloys

Isothermal annealing of creep resistant Mg-6 wt. % Y-3 wt. % Nd and Mg-6 wt. % Y-3 wt. % Nd-0·4 wt. % Zr in the temperature range 150–350 °C was investigated by hardness testing. The observed hardness changes are ascribed to a rearrangement of solutes (most probably of yttrium atoms). An attempt was made to study this rearrangement of solute atoms by electrical resistance and differential scanning calorimetry measurements.     

Optical and electrical properties of SnO2:Sb thin films deposited by oblique angle deposition

The antimony doped tin oxide (SnO₂:Sb) (ATO) thin films were prepared by oblique angle electron beam evaporation technique. X-ray diffraction, field emission scanning electron microscopy, UV-vis-NIR spectrophotometer and four-point probe resistor were employed to characterize the structure, morphology, optical and electrical properties. The results show that oblique angle deposition ATO thin films with tilted columns structure are anisotropic. The in-plane birefringence of optical anisotropy is up to 0.035 at α = 70°, which means that it is suitable as wave plate and polarizer. The electrical anisotropy of sheet resistance shows that the sheet resistance parallel to the deposition plane is larger than that perpendicular to the deposition plane and it can be changed from 900 Ω/□ to 3500 Ω/□ for deposition angle from 40° to 85°, which means that the sheet resistance can be effectively tuned by changing the deposition angle. Additionally, the sandwich structure of SiO₂ buffer layer plus normal ATO films and oblique angle deposition ATO films can reduce the resistance, which can balance the optical and electrical anisotropy. It is suggested that oblique angle deposition ATO thin films can be used as transparent conductive thin films in solar cell, anti-foggy windows and multifunctional carrier in liquid crystal display.     

Effect of the microstructure on electrical properties of high-purity germanium

The interrelation between the electrical properties and the microstructure of high-purity germanium crystals has been revealed. The electrical conductivity of polycrystalline samples increases and the life-time of nonequilibrium charge carriers in them decreases with a decrease in the crystallite sizes.     

Effect of zinc substitution on magnetic and electrical properties of nanocrystalline nickel ferrite synthesized by refluxing method

Nanocrystalline Nickel ferrite (NiFe₂O₄) and Zn substituted nickel ferrite (NiZnFe₂O₄) have been synthesized by the refluxing method. These ferrites were characterized by XRD, TEM, Mossbauer spectroscopy and VSM in order to study the effect of zinc substitution in nickel ferrite. XRD diffraction results confirm the spinel structure for the prepared nanocrystalline ferrites with an average crystallite size of 14-16 nm. Lattice parameter was found to increase with the substitution of Zn²⁺ ions from 8.40 Å to 8.42 Å. TEM images confirmed average particle size of about 20 nm and indicates nanocrystalline nature of the compounds. A shift in isomeric deviation with the doublet was observed due to the influence of Zn substitution in the nickel ferrite. The Zn content has a significant influence on the magnetic behavior and electrical conductivity of NiFe₂O₄. Saturation magnetization drastically increased whereas room temperature electrical conductivity decreased due to the addition of Zn content in NiFe₂O₄, indicating super magnetic material with lesser coercivity.     

Effect of oxidation on the electrical properties of granular copper nanostructures

The structural and electrical properties of thin granular metal films obtained by laser electrodispersion were studied. Such structures, which consist of amorphous copper grains 5 nm in size, were established to be extremely stable against oxidation. For instance, when oxidized in air, copper grains were covered by Cu₂O oxide shells about 1 nm thick after a period of a few days, after which further growth of the oxide in thickness stopped. The oxidized close-packed structures conduct current through intergrain tunneling electron transitions, whereas in partially oxidized structures the conduction involves tunneling electron hopping between conducting ensembles made up of several nanoparticles. It was shown that the size of the nanoparticles and of the conducting ensembles can be found by analyzing the temperature dependence of the conductivity and, independently, from the I–V characteristics of the films.     

Effect of alpha-particle irradiation on the electrical properties of n-type Ge

Deep-level transient spectroscopy was used to investigate the effect of alpha particle irradiation on the electrical properties of n-type Ge. The samples were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radionuclide source. The main defects introduced were found to be electron traps with energy levels at E_C−0.38, E_C−0.21, E_C−0.20, E_C−0.15, and E_C−0.10 eV, respectively. The main defects in alpha particle irradiation are similar to those introduced by MeV electron irradiation, where the main defect is the E-center. A quadratic increase in concentration as a function of dose is observed.     

Effect of high pressure on the electrical properties of amorphous arsenic

The room temperature resistivity of bulk amorphous arsenic subjected to increasing pressure, decreases continuously over about seven orders of magnitude, the material remaining amorphous until, at a pressure of 40 kBar, a sharp irreversible transition occurs involving a further five decades fall in resistivity, the material then crystallizing to the semi-metallic rhombohedral form. Conclusive evidence for variable-range hopping in vitreous arsenic is reported here for the first time. It is observed in samples which have been released from pressures less than 40 kBar; a value of approximately 6 x 10¹⁷ eV^-1 cm^-3 is deduced for the density at the Fermi level of pressure-induced defect states responsible for this behaviour.     

Effect of rapid quenching on electrical properties of lithium conductive glasses

A twin roller apparatus has been designed to be used in a controlled environment, so that even hydroscopic and oxidizable glasses may be prepared by rapid quenching. xLi₂O(1?x)P₂O₅ and xLi₂S(1?x)GeS₂ glasses have been prepared and their electrical conductivity measured as a function of temperature. The electrical characteristics of rapidly quenched and conventional glasses are compared in order to study the influence of the cooling rate. The results are quite different for oxide and sulfide glasses. Rapid quenching does not much affect oxide glasses whereas for sulfide glasses important decreases in activation energies and pre-exponential factors are observed.     

Effect of Sc and Yb doping on electrical and luminescence properties of silicon produced by the Stockbarger method

The effect of scandium and ytterbium doping on the electrical and luminescence properties of polycrystalline silicon produced by the Stockbarger method was studied. It is found that the resistivity, the lifetime of minority charge carriers, and the position of the maximum of the low-temperature luminescence band, which are constant along the growth direction for undoped ingots, vary monotonically along the growth direction for doped ingots. Analysis of the photoluminescence spectra and conductivity in different parts of the doped ingots shows that variations in their electrical properties along the growth direction are due to a redistribution of background acceptors, whose concentration decreases steadily from the beginning of an ingot toward its end. The redistribution of the background impurities is related to the formation of background-impurity-doping impurity compounds, for which the distribution coefficients significantly deviate from unity in a silicon melt.     

Symmetrical high-T c superconducting bicrystal Josephson junctions: Dependence of the electrical properties on the misorientation angle

The electrical properties of junctions at symmetrical bicrystal boundaries in high-T _c superconducting films are studied as functions of the misorientation angle in the range 8°–45°. The junctions are prepared by growing YBa₂Cu₃O₇ (YBCO) epitaxial films on Y-ZrO₂ (YSZ) bicrystal substrates. The proportional relationship between the characteristic voltages and the normal conductivities of junctions is derived from the dependences of the critical current and the normal resistance on the misorientation angle. The results are interpreted within the model of a superconductor-dielectric with defect levels in the band gap of the superconductor. The deviations from the proportional relationship are explained by the junction inhomogeneity. The thickness of the effective dielectric layer in the bicrystal junction and the Bohr radius of electrons on the defects are estimated.     

Effect of vacancy defect on electrical properties of chiral single-walled carbon nanotube under external electrical field

Ab initio calculations demonstrated that the energy gap modulation of a chiral carbon nanotube with mono-vacancy defect can be achieved by applying a transverse electric field. The bandstructure of this defective carbon nanotube varying due to the external electric field is distinctly different from those of the perfect nanotube and defective zigzag nanotube. This variation in bandstructure strongly depends on not only the chirality of the nanotube and also the applied direction of the transverse electric field. A mechanism is proposed to explain the response of the local energy gap between the valence band maximum state and the local gap state under external electric field. Several potential applications of these phenomena are discussed.     

Effect of intercalation on electrical and mechanical properties of C/C composites

The work is concerned with modification of C/C composites by intercalation of copper chloride. The samples of composites were made from graphite fibres and carbon matrix derived from mesophase pitch and from phenol-formaldehyde resin. The samples were prepared by impregnating graphite fibres with a liquid pitch or polymer solution to obtain unidirectional laminates. The laminates were used to prepare the composites which were then subjected to carbonization and graphitization up to 2150 °C. The work discusses the problem relevant to the effect of intercalation on mechanical and electrical properties of composites. The studies indicated that both mesophase pitch-based composites and phenolic-derived carbon-carbon composites changed their electrical and mechanical properties upon intercalation with copper chloride. Electrical conductivity of both types of composites decreased as a result of the damages formed during intercalation.     

Effect of plasticizer on structural and electrical properties of nanocomposite solid polymer electrolytes

The solid polymer electrolyte films based on polyethylene oxide, NaClO₄ with dodecyl amine modified montmorillonite as filler, and polyethylene glycol as plasticizer were prepared by a tape casting method. The effect of plasticization on structural, microstructural, and electrical properties of the materials has been investigated. A systematic change in the structural and microstructural properties of plasticized polymer nanocomposite electrolytes (PPNCEs) on addition of plasticizer was observed in our X-ray diffraction pattern and scanning electron microscopy micrographs. Complex impedance analysis technique was used to calculate the electrical properties of the nanocomposites. Addition of plasticizer has resulted in the lowering of the glass transition temperature, effective dissociation of the salt, and enhancement in the electrical conductivity. The maximum value of conductivity obtained was ∼4.4 × 10⁻⁶ S cm⁻¹ (on addition of ∼20% plasticizer), which is an order of magnitude higher than that of pure polymer nanocomposite electrolyte films (2.82 × 10⁻⁷ S cm⁻¹). The enhancement in conductivity on plasticization was well correlated with the change in other physical properties.     

Effect of high pressures on the mechanical and electrical properties of barium chalcogenides

In this work, on the basis of a semiempirical model of bonding forces that allows for three-particle interaction and uses the pseudopotential method, the mechanical and electrical properties of barium chalcogenides are studied at hydrostatic pressure. Equations of state are formulated from hydrostatic compression, parameters of the type B1–B2 structural phase transitions are calculated, the change in the energy band spectrum under the influence of the pressures is studied, and an estimate is made of the critical amount of compression that induces a dielectric-metal phase transition. The results obtained are in agreement with the available data.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 44–52, November, 1991.