NaCl对液-液扩散法生长溶菌酶晶体的影响

用动态光散射法研究了不同浓度NaCl对液—液扩散法生长溶菌酶晶体的影响， 并测量了晶体生长前后体系的Zeta电势．结果表明，NaCl浓度较高时，在溶菌酶溶 液—凝胶界面处会发生液液分层现象，溶液中一直存在较大的聚集体，生长出的晶 体质量较差．而在合适的NaCl浓度下，随着溶液Zeta电势降低，溶液中溶菌酶的大 的聚集体发生解聚集，生长出的晶体质量较高．     

气相扩散法生长溶菌酶晶体的动态光散射研究

首次采用动态光散射研究了气相扩散法生长溶菌酶晶体.实验中采用了两种溶解溶菌酶的方法,所得实验结果是有区别的.这种区别表明了NaCl对溶菌酶分子间相互作用产生十分重要的影响.实验结果表明,晶体生长过程中,溶液中溶菌酶始终保持单分子与两分子聚集体的状态,这种状态是生长晶体的基础.     

光散射技术在蛋白质晶体生长研究中的应用和进展

光散射技术广泛应用于生物大分子的晶体生长研究中,它包括静态光散射和动态光散射两种。利用静态光散射可以测定蛋白质溶液渗透的第二维里系数;利用动态光散射可以测定蛋白质溶液的平动扩散系数,获得溶液中蛋白质粒子的流体力学半径及分布情况,分离蛋白质结晶的成核与生长过程,研究大分子的聚集行为和晶体生长的动力学。借助光散射技术可以实现蛋白质晶体生长过程的动态控制。近些年光散射仪器向着小型化、轻便化的方向发展,光散射技术不断得到改进,日益完善,不仅用于地面实验,也应用于空间领域蛋白质晶体生长的研究中。     

溶菌酶晶体生长前期溶液中聚集体研究

用动态光散射法研究了不同浓度NaCl对溶菌酶晶体生长前期溶液中聚集体状态的影响,并将这些溶液中的聚集体吸附到硅片表面,用原子力显微镜进行了观察.结果表明,在NaCl浓度为0～0.5 mol·L^-1时,随着NaCl浓度的升高,溶液中大的聚集体逐渐消失,直至基本上只存在几纳米大小的聚集体.测量了相应条件下溶液的Zeta电势值以说明NaCl与溶菌酶之间的相互作用的变化情况.本文从溶液中无序聚集体的角度出发提出了判断晶体能否生长的一个可能的标准,并对动态光散射与原子力显微镜的结果进行了对比和分析.     

气相扩散速率对溶菌酶晶体生长的影响

为研究气相扩散速率对溶菌酶晶体生长的影响,特设计了一种可方便调节气相扩散速率的晶体生长样品池,并用动态光散射法对不同气相扩散速率下晶体生长过程进行了研究.实验结果表明,随着气相扩散速率的增加,晶体生长过程中的成核阶段缩短.气相扩散速率通过影响溶菌酶溶液形成过饱和的速率来影响生长出的晶体的数量和大小.     

木质素桃红与蛋白质作用的共振光散射研究

研究了木质素桃红与蛋白质结合的共振光散射光谱. 实验结果表明, 在pH 2.56的酸性介质中, 木质素桃红与蛋白质发生静电作用产生以282.0、 346.0、 420.0 nm以及570.0 nm为特征峰的共振光散射（RLS）增强光谱. 在570.0 nm波长光激发下, 蛋白质的质量浓度与增强共振光散射强度ΔIRLS呈线性关系, 对BSA和HSA的检出限分别为39.0和22.3 ng/mL. 方法已用于尿样中总蛋白质分析.     

刚果红共振光散射法测定蛋白质

本文研究了生物染料刚果红(Congo red)与人血清白蛋白(HSA)作用的共振光散射光谱,pH为4．35的溶液中,刚果红与人血清白蛋白作用导致在575m处共振光散射明显增强,且共振光散射信号值与蛋白质的浓度具有线性关系。     

Yb∶YAB晶体的生长及性质

研究了ＹｂｘＹ１－ｘＡｌ３（ＢＯ３）４（Ｙｂ∶ＹＡＢ）晶体的生长及光学性质,结果表明,以Ｋ２Ｍｏ３Ｏ１０作为助熔剂生长Ｙｂ∶ＹＡＢ晶体效果较好,根据测定的Ｙｂ∶ＹＡＢ折射率计算的一类位相匹配角为θｍ（Ⅰ）＝３４°１２′,与实验测定值θｍ（Ⅰ）＝３４°３８′吻合较好。该晶体室温吸收谱在９５６和９７５ｎｍ处存在两个吸收带,适于ＩｎＧａＡｓ泵浦;室温π偏振吸收比σ偏振吸收略强;１０３和１０４μｍ处各存在一荧光峰,１０３μｍ处荧光寿命为１３７９ｍｓ;估算的发射截面数量级为１０－２１ｃｍ２     

Yb：YAB晶体的生长和激光性能研究

采用助熔剂法生长了不同配比的激光自倍频晶体Yb:YAl3(BO3)4(Yb:YAB).在10％的Yb:YAB晶体中,用输入功率为1．4WS,波长为974nm的光纤淹合二极管激光器泵浦得到160mW的高效连续绿光输出,能量转换效率为11．3％,光－光转换效率为3．9％,并采用石英双折射滤波片测得其调谐波长范围为513．0－545．8nm,增大泵浦能量,在977nm处采用二极管泵浦测得其自倍频输出绿光能量为1．1W,总转换效率为10％。     

三硼酸锂晶体的生长形态

用自由生长系统研究了三硼酸锂ＬｉＢ_３Ｏ_５（ＬＢＯ）晶体的实际生长形态。实验表明，它的各晶面簇的重要性的顺序为：｛１１０｝＞｛０１１｝＞｛２０１｝＞｛１１１｝。讨论了ＬＢＯ晶体的生长习性与内部结构之间的关系并应用负离子配位多面体理论模型解释了ＬＢＯ晶体的生长形态。     

Study of Growth Mechanism of Lysozyme Crystal by Batch Crystallization Method

Space environment is regarded as the perfect environment for the production of higher quality protein crystals since the sedimentation movement and convective flow due to the gravity is negligible under the microgravity condition of space environment. A n…     

溶菌酶晶体生长过程中的扩散传质问题

采用Mach-Zehnder干涉测量系统与图象处理系统相结合实时观测溶菌酶蛋白质晶体生长过程中的流体动力学现象, 对汽相扩散法溶菌酶蛋白质晶体生长过程进行了研究, 观测到溶菌酶晶体生长时晶体周围存在的干涉条纹. 分析了晶体生长时的重力沉降效应和溶质扩散过程. 实验结果表明, 该生长过程中的流体物理特征直接影响了生长晶体的晶面. 根据实验结果, 给出对蛋白质晶体生长过程流体物理现象的讨论.     

Laser‐Induced Crystallization and Crystal Growth

Recent streams of laser studies on crystallization and crystal growth are summarized and reviewed. Femtosecond multiphoton excitation of solutions leads to their ablation at the focal point, inducing local bubble formation, shockwave propagation, and convection flow. This phenomenon, called “laser micro tsunami” makes it possible to trigger crystallization of molecules and proteins from their supersaturated solutions. Femtosecond laser ablation of a urea crystal in solution triggers the additional growth of a single daughter crystal. Intense continuous wave (CW) near infrared laser irradiation at the air/solution interface of heavy‐water amino acid solutions results in trapping of the clusters and evolves to crystallization. A single crystal is always prepared in a spatially and temporally controlled manner, and the crystal polymorph of glycine depends on laser power, polarization, and solution concentration. Upon irradiation at the glass/solution interface, a millimeter‐sized droplet is formed, and a single crystal is formed by shifting the irradiation position to the surface. Directional and selective crystal growth is also possible with laser trapping. Finally, characteristics of laser‐induced crystallization and crystal growth are summarized.     

Controllable Zeolite AST Crystallization: Between Classical and Reversed Crystal Growth

Crystal growth mechanisms govern a wide range of properties of crystalline materials. Reversed crystal growth is one of the nonclassical mechanisms observed in many materials. However, the reversed crystallization starting from amorphous aggregates and the key factors driving this growth remain elusive. Here, we describe a characteristic model of reversed crystal growth representing the inner structure and crystallinity development of aggregates studied by microscopy and nano X-ray computed tomography. By adjusting the synthesis conditions, the fundamental function of the structure-directing agent, which determines the crystallization pathway, was revealed. As a result, the crystal growth mode can be “switched” from the classical route at a low ratio of SDA/framework elements to reversed growth at a high ratio. Our findings provide further insights into crystal growth control, which is crucial for improving synthesis protocols and designing various forms of crystalline materials.     

溶液间歇结晶过程成核与生长阶段的定量识别

为定量识别溶液间歇结晶过程中的成核和生长阶段,基于晶粒数目和粒度的变化对粒度分布(CSD)的二阶和三阶矩量影响程度的不同,定义并关联了无因次变量K和K^*.添加晶种KNO₃-H₂O溶液结晶过程模拟计算的结果表明,K和K^*值均呈先降后升的变化趋势,成核时单调下降,生长过程中单调上升;且K与K^*值较接近.测定了KNO₃-H₂O溶液自发成核结晶过程中溶液浓度和透光率的变化,用K^*判据定量识别出成核阶段和生长阶段,并与晶体线性生长速率模型检验的结果相吻合.K值的计算依赖于CSD和结晶动力学参数,而K^*作为成核和生长阶段的模型判据,由实验测定的溶液浓度和透光率计算得到.     

Growth Mechanism of Graphene on Graphene Films Grown by Chemical Vapor Deposition

We report an approach for the synthesis of mono‐ or bilayer graphene films by atmospheric‐pressure chemical vapor deposition that can achieve a low defect density through control over the growth time. Different heating ramp rates were found to lead to variation in the smoothness and grain size of the Cu foil substrate, which directly influenced the density of the graphene domains. The rough Cu surface induced by rapid heating creates a high density of graphene domains in the initial stage, ultimately resulting in a graphene film with a high defect density due to an increased overlap between domains. Conversely, a slow heating rate resulted in a smooth and flat Cu surface, thereby lowering the density of the initial graphene domains and ensuring a uniform monolayer film. From this, we demonstrate that the growth mechanism of graphene on existing graphene films is dependent on the density of the initial graphene domains, which is affected by the heating ramp rate.