Observation of Two-Level Critical State in the Superconducting FeTe Thin Films

FeTe, a non-superconducting parent compound in the iron-chalcogenide family, becomes superconducting after annealing in oxygen. Under the presence of magnetism, spin-orbit coupling, inhomogeneity and lattice distortion,the nature of its superconductivity is not well understood. Here we combine the mutual inductance technique with magneto transport to study the magnetization and superconductivity of FeTe thin films. It is found that the films with the highest T_C show non-saturating superfluid density and a strong magnetic hysteresis distinct from that in a homogeneous superconductor. Such a hysteresis can be well explained by a two-level critical state model and suggests the importance of granularity to superconductivity in this compound.     

Molecular beam epitaxy and superconductivity of stoichiometric FeSe and KxFe2_ySe2 crystalline films

Our recent progress in the fabrication of FeSe and KxFe2_ySe2 ultra thin films and the understanding of their superconductivity properties is reviewed. The growth of high-quality FeSe and KxFe2_ySe2 films is achieved in a well controlled manner by molecular beam epitaxy. The high-quality stoichiometric and superconducting crystalline thin films allow us to investigate the intrinsic superconductivity properties and the interplay between the superconductivity and the film thickness, the local structure, the substrate, and magnetism. In situ low-temperature scanning tunneling spectra reveal the nodes and the twofold symmetry in FeSe, high-temperature superconductivity at the FeSe/SrTiO3 interface, phase separation and magnetic order in KxFe2_ySe2, and the suppression of superconductivity by twin boundaries and Fe vacancies. Our findings not only provide fundamental information for understanding the mechanism of unconventional superconductivity, but also demonstrate a powerful way of engineering superconductors and raising the transition temperature.     

FeTe合金结构分析及其薄膜制备

利用固态反应法制备了名义成分为FeTe的合金, 采用X射线粉末衍射技术和Rietveld全谱拟合分析方法测定了其相组成和晶体结构. 研究表明,主相为Fe_1.08Te,空间群为P4/nmm,点阵参数 a = 3.8214(3) Å, c = 6.2875(3) Å, Z = 2, Fe原子占据2a和2c晶位, Te原子占据2c晶位. 利用脉冲激光沉积技术制备的FeTe薄膜超导转变起始温度为13.2 K,零电阻温度为9.8 K. 关键词： FeTe Rietveld结构精修 超导薄膜     

Mg/B多层膜退火法中不同制备条件对MgB2超导薄膜性质的影响

用Mg/B多层膜退火的方法制备了一系列MgB₂超导薄膜,研究了退火温度、退火时间和薄膜厚度对于MgB₂薄膜性质的影响.厚度为250 nm的Mg/B多层膜经400 ℃低温退火后已经生成超导相,此厚度薄膜750 ℃下退火20—30 min实现最佳超导转变温度（T_c）.前驱膜分层厚度相同时,随着薄膜厚度减小MgB₂薄膜T_c明显降低,而且较薄的膜T_{c关键词： 2}超导薄膜')" href="#">MgB₂超导薄膜 电子束蒸发 超导成相     

SUPERCONDUCTING FILM INJECTED BY IONS FROM PULSED ENERGETIC DENSE PLASMA SOURCE

The oxygen and silicon ions have been obtained respectively from pulsed energetic dense oxygen plasma and silane plasma generated by electrodeless discharge. The oxygen ions have been injected into superconducting Nb films, and the Si ions into superconducting YBCO films in order to investigate the variation of their superconductivity with the ions injected into them. Auger profile data show that the injection depths range from 20 to 40nm in the films, depending on the injection condition and film material. The resistance－temperature relations (R-T curves) indicate that the superconductivity remains unchanged in the photoresist-masked part of the film, but is significantly changed in the exposed part. The evenness of the film surface remains unchanged after injection. This technique may serve as an alternative to the planar inhibiting fabrication technique in the fabrication of the multi-layer structure of superconducting films, and also possibly to the conventional plasma source ion implantation technique in material surface processing.     

在蓝宝石上生长CeO2 缓冲层的原位双温工艺法及Tl-2212薄膜的技术改进

报道了在蓝宝石衬底上制备CeO₂缓冲层的原位双温工艺法及其对Tl₂Ｂa₂CaCu₂Ｏ₈（Tl-2212）薄膜超导特性的影响．XPS和AFM测试结果表明,采用原位双温工艺法制备缓冲层,具有工艺简单,薄膜表面光滑,衬底材料原子扩散量少等特点．在先驱膜的高温后退火过程中,40 nm厚的CeO₂薄膜就能有效地阻挡衬底材料对超导薄膜底层的扩散．随后制备厚度为530 nm的Tl-2212 关键词： Tl-2212超导薄膜 蓝宝石 氧化铈缓冲层 原位双温工艺法     

Hall effect of FeTe and Fe(Se1–xTex) thin films

The Hall effect is investigated in thin-film samples of iron–chalcogenide superconductors in detail. The Hall coefficient (R_H) of FeTe and Fe(Se_1–xTe_x) exhibits a similar positive value around 300 K, indicating that the high-temperature normal state is dominated by hole-channel transport. FeTe exhibits a sign reversal from positive to negative across the transition to the low-temperature antiferromagnetic state, indicating the occurrence of drastic reconstruction in the band structure. The mobility analysis using the carrier density theoretically calculated reveals that the mobility of holes is strongly suppressed to zero, and hence the electric transport looks to be dominated by electrons. The Se substitution to Te suppresses the antiferromagnetic long-range order and induces superconductivity instead. The similar mobility analysis for Fe(Se_0.4Te_0.6) and Fe(Se_0.5Te_0.5) thin films shows that the mobility of electrons increases with decreasing temperature even in the paramagnetic state, and keeps sufficiently high values down to the superconducting transition temperature. From the comparison between FeTe and Fe(Se_1–xTe_x), it is suggested that the coexistence of ‘itinerant’ carriers both in electron and hole channels is indispensable for the occurrence of superconductivity.     

高质量镍基超晶格薄膜的制备及表征

自发现镍基超导薄膜之后, 镍基材料体系已成为当前人们的研究热点. 而在相关报道中, 普遍认为高质量的镍基超导前驱体薄膜的制备对其拓扑还原后超导电性的实现具有重要影响. 前期研究表明高质量的前驱体薄膜只生长在SrTiO3 衬底附近, 这与我们的实验结果一致. 为了可控制备高质量的镍基超导前驱体薄膜, 本文利用脉冲激光沉积(PLD) 技术在SrTiO3 (001) 衬底上生长不同厚度的可层选择性还原的[SrTiO3 ]m/[ Nd0 .8Sr0 .2 NiO3 ]n[(STO)m/(NSNO)n ]超晶格薄膜. 采用反射高能电子衍射仪(RHEED) 及透射电子显微镜(STEM) 和 X 射线衍射(XRD) 技术对超晶格薄膜的结构进行原位检测及结构表征, 然后利用综合物性测量系统(PPMS) 测试薄膜的电磁输运性质. 结果表明, 超晶格薄膜的结构质量良好, 超晶格薄膜和高质量单层前驱体薄膜表现出类似的电阻和磁阻现象. 该研究为后续镍基超导薄膜的可重复制备提供了重要的参考.     

铁硒基超导研究新进展:高质量(Li,Fe)OHFeSe单晶薄膜

单晶薄膜形态的高温超导材料对于相关基础科学研究和应用开发都极为重要.多带的铁基高温超导体往往呈现丰富的物理现象,并具有较高的超导临界参数.特别是近年发现的插层（Li,Fe）OHFeSe超导体,无论对高温超导机理还是应用研究而言,都日益受到重视,已成为铁基家族中重要的典型材料.但是,该化合物含有OH键,加热易分解.因此,现有的常规高温成膜技术均不适用于生长该薄膜材料.为解决这一生长难题,我们最近发明了基体辅助水热外延生长法,实现了超导薄膜制备技术上的突破.本文简要介绍用此软化学成膜技术首次成功制备出（Li,Fe）OHFeSe单晶薄膜.该薄膜材料具有优良的结晶质量和较高的超导临界参数,特别是其高的临界电流密度和上临界场对应用开发有实际价值.因此,（Li,Fe）OHFeSe超导单晶薄膜的成功合成,为机理研究和应用开发分别提供了重要的实验载体和备选材料.另外,该薄膜技术也有望应用于其他功能材料的探索与合成,尤其是对常规手段难以获取的材料更具重大价值.     

FeSe基超导单晶与薄膜研究新进展:自旋向列序、电子相分离及高临界参数

FeSe基超导体的超导临界温度可大范围调控,物理现象丰富,是非常规超导机理研究的热点.由于较高的超导临界参数及易于加工等特点,FeSe基超导体在超导应用开发方面也日益受到重视.大尺寸高质量的单晶和薄膜形态的FeSe基超导材料,对于相关基础科学研究和应用开发都极为重要.作者近年来先后开发和发明了水热离子交换（ion-exchange）、离子脱插（ion-deintercalation）、基底辅助水热外延生长方法,成功解决了二元FeSe和插层（Li,Fe）OHFeSe超导体高质量单晶和薄膜的生长和物性调控难题.进而在相关物理问题的研究中取得新进展,包括发现二元FeSe中自旋向列序与超导电性密切相关,观测到（Li,Fe）OHFeSe中的电子相分离现象.此外,（Li,Fe）OHFeSe超导薄膜呈现很高的超导临界电流密度和上临界磁场,其应用前景值得关注.     

Epitaxial growth of solution deposited YBa2Cu3O7-δ films

The solution deposition of YBa2Cu3O7- (Y123) high temperature superconducting thin films was studied. The films were prepared from a polymer-containing precursor onto SrTiO3 (001) and LaAlO3 (001) substrates and mineralized at high temperatures. The process depended on details of the film preparation in a delicate fashion, resulting either in superconducting or non-superconducting thin films. To elucidate this difference in conductivity, scanning electron microscopy and several X-ray diffraction techniques were used to characterize the resulting Y123 layers. Both the morphology of the film and the percentage of non-superconducting minority components are likely to be the origin of the difference in the conductance behavior at low temperatures.     

MgB2超导膜的厚度与其Jc(5K,0T)的关系

通过混合物理化学气相沉积法 (hybrid physical-chemical vapor deposition, HPCVD), 在(000l) SiC 衬底上制得一系列从10 nm到8 μm的MgB₂超导膜样品, 并对它们的形貌、超导转变温度T_c 和临界电流密度J_c与膜厚度的关系进行了研究. 观察到T_c随膜厚度增加上升到最大值后, 尽管膜继续增厚, 但T_c值保持近乎平稳, 而J_c则先随膜厚度增加上升到最高值后, 继而则随膜的厚度的增加而下降. MgB₂膜的T_c(0)和T_c(onset)值与膜厚的关系基本一致, T_c(0)在膜厚为230 nm处达到最大值T_c(0)=41.4 K, 而J_c(5K,0T)在膜厚为100 nm时达到最大值, J_c (5 K, 0 T)=2.3×10⁸A·cm^-2, 这也说明了我们能用HPCVD方法制备出高质量干净MgB₂超导膜. 本文研究的超导膜厚度变化跨度非常大, 从10 nm级的超薄膜到100 nm级的薄膜, 再到几微米的厚膜, 如此T_c和J_c对膜厚度变化的依赖就有了较完整、成体系的研究. 并且本文的工作对MgB₂超导薄膜制备的厚度选取具有实际应用意义. 关键词： 2超导膜')" href="#">MgB₂超导膜 混合物理化学气相沉积法 厚度 临界电流密度     

Electronic transport in Mo/Ni superlattices

An experimental relationship between superconductivity, magnetism and localization is explored in short-wavelength (14Å ? ? ? 40Å) sputtered Mo/Ni superlattices. A crossover to a superconducting state is observed for ? < 9Å consistent with the observed paramagnetic behavior when the Ni strata are four atomic layers thick, or less. All samples show localization effects at helium temperatures and non-superconducting samples develop an unusual resistance plateau below T ? 0.5K.     

Suppression of superconductivity in YBCO/LCMO superlattices

The competition of superconductivity and magnetism in superlattices composed of alternating YBa₂Cu₃O_7−d and La_0.67Ca_0.33MnO₃ thin films is investigated using low-energy optical spectroscopy. The thickness of the superconducting YBCO layers is varied from 30 to 20 nm while the thickness of the magnetic LCMO layers is kept constant at 20 nm. We clearly observe that the superconducting condensate density in the superconducting state of super lattice is drastically reduced by the magnetic subsystem which may be connected with proximity effects that distort the gap symmetry and thus suppress superconductivity.     

二维应变作用下超导薄膜LiFeAs的磁性和电子性质

基于密度泛函理论的第一性原理计算,研究了二维应变作用下LiFeAs超导薄膜的磁性结构、电子能带和态密度变化,分析了应变对其超导电性的作用.结果显示,对体系施加1%—6%的二维平面张、压应变均不改变其基态条形反铁磁性结构,费米面附近的电子态密度主要来自于Fe-3d轨道电子以及少量的As-4p电子.研究发现,与无应变情形相比,当施加压应变时,体系中Fe离子的反平行的电子自旋局域磁矩减小,薄膜反铁磁性受到抑制,费米面上电子态密度增加,超导电性来自于以反铁磁超交换耦合作用为媒介的空穴型费米面和电子型费米面间嵌套的Cooper电子对.而在张应变作用时,局域反铁磁性增强,费米面上电子态密度减小,金属性减弱,特别是张应变时费米面上空穴型能带消失, Cooper电子对出现概率显著降低,将抑制超导相变.     

Optical spectroscopy studies on FeTe_(1-x)Se_x and A_xFe_(2-y)Se_2 (A=K,Rb, Cs): A brief overview

In this short overview, we summarize the optical spectroscopy studies on iron selenide superconducting systems FeTe1-xSex and AxFe2-ySe2 . We elaborate that optical spectroscopy measurements yield fruitful information about the band structure evolution across the AFM phase transition temperature, the electronic correlation effect, the superconducting pairing energy gap, the condensed carrier density or penetration depth, the inhomogeneity and the nanoscale phase separation between superconductivity and antiferromagnetism in those systems.     

超导薄膜磁场穿透深度的双线圈互感测量

磁场穿透深度是联系超导体宏观电动力学与微观机制的重要物理量,其精确测量对于研究超导机理以及探索超导应用具有重要意义.在众多的磁场穿透深度测量方法中,双线圈互感法具有测量精度高、技术相对成熟、对样品没有破坏等优点,可被用于细致地研究超导薄膜的磁场穿透深度对温度、掺杂、外延应力等参量的依赖关系.本文首先简要介绍了双线圈互感法的基本原理,指出该方法的测量精度主要受系统几何参数及薄膜边缘漏磁的影响;之后对自主设计搭建的透射型双线圈互感装置进行了系统的校验,并详细说明了其测量精度:对于厚度为100 nm,穿透深度为150 nm的典型薄膜样品,穿透深度绝对值的测量误差小于10%;最后通过测量NbN超导薄膜的磁场穿透深度进一步检验了装置的精度,分析表明穿透深度的测量值与文献报道结果符合.     

电子束蒸发制备YBCO超导薄膜研究

采用电子束沉积制备YBCO超导薄膜,研究了760℃—840℃的不同退火温度下高温热处理对YBCO薄膜双轴织构、表面形貌及超导性能的影响。超导临界电流密度测试、X射线衍射(XRD)和扫描电镜(SEM)的结果表明,退火温度在在800℃时,YBCO薄膜具有良好的织构和平整致密的表面形貌,在77K自场下的临界电流密度J可达4.2×106/cm2。     

Elastic properties of superconducting and non-superconducting DyBaSrCu3O7−δ

Ultrasonic longitudinal and shear wave velocities were measured for superconducting and non-superconducting DyBaSrCu₃O_7−δ (Dy-1113) at 10 MHz between 80 and 270 K. The superconducting sample exhibits a step-like elastic anomaly between 190 and 230 K. No elastic anomaly was observed in the non-superconducting Dy-1113. The anomaly observed in the superconducting sample is attributed to structural phase transition caused by oxygen orderings.     

MgO衬底上YBa2Cu3O7-δ台阶边沿型约瑟夫森结的制备及特性

MgO衬底上的YBa2Cu3O7-δ(YBCO)台阶边沿型约瑟夫森结(台阶结)在高灵敏度高温超导量子干涉器(superconducting quantum interference device,SQUID)等超导器件研制方面具有重要的应用价值和前景.本文对此类YBCO台阶结的制备和特性进行了研究.首先利用离子束刻蚀技术和两步刻蚀法在MgO(100)衬底上制备陡度合适、边沿整齐的台阶,然后利用脉冲激光沉积法在衬底上生长YBCO超导薄膜,进而利用紫外光刻制备出YBCO台阶结.在结样品的电阻-温度转变曲线中,观测到低于超导转变温度时的电阻拖尾现象,与约瑟夫森结的热激活相位滑移理论一致.伏安特性曲线测量表明结的行为符合电阻分路结模型,在超导转变温度TC附近结的约瑟夫森临界电流密度TC随温度T呈现出(TC-T)^2的变化规律,77 K时JC值为1.4×10^5 A/cm^2.利用制备的台阶结,初步制备了YBCO射频高温超导SQUID,器件测试观察到良好的三角波电压调制曲线,温度77 K、频率1 kHz时的磁通噪声为250μΦ0/Hz^1/2.本文结果为进一步利用MgO衬底YBCO台阶结研制高性能的高温超导SQUID等超导器件奠定了基础.