Linear magnetoresistance effect in lateral magnetic superlattices

Two-dimensional electron gas systems modulated by a lateral magnetic superlattice are proposed and the related magnetoresistance effect is described in this work. It is found that the magnetoresistance (MR) ratio of the given structures depends strongly on the uniform magnetic field, and the peaks of the MR ratio depressed linearly with the increase of the uniform magnetic field. This feature can be utilized in practical linear magnetoresistance (LMR) devices.     

Magnetoresistance dependence on electrical contact geometry and field alignment in mesoscopic rectangular rings

We investigate the magnetoresistance (MR) responses in a ferromagnetic rectangular ring structure using a four-point probe technique. The measured MR curves are strongly dependent on the electrical contact geometries used. The associated MR characteristics are elucidated by a combination of micromagnetic simulations and resistor-network based model, and the MR contributions from different portions of the ring were studied quantitatively. The systematic angular MR measured at the ring corner further show that the locations of the domain wall nucleation are very sensitive to the field alignment.     

Ballistic transport through a sharp domain wall in a semiconducting ferromagnetic nanoconstriction and in the presence of the Dresselhaus spin-orbit coupling

We study the effect of the Dresselhaus spin-orbit interaction on the magnetoresistance (MR) of a quasi-one-dimensional ferromagnetic semiconductor containing a sharp domain wall. The MR is calculated in the ballistic regime, within the Landauer-Büttiker formalism. The results show that the Dresselhaus spin-orbit coupling which induces an effective magnetic field along the wire, reduces the domain wall MR.     

多晶钙钛矿锰氧化物中的巨磁电阻与磁场关系

本论文研究了多晶锰氧化物磁电阻和磁场的关系,在低温和低场下,磁性纳米团簇的磁矩转动和晶粒边界的自旋二级隧穿对磁电阻起主要作用因高于Tc时,由弱化强度随温度关系的实验结果指出顺磁态中已出现铁磁团簇,因此它类似于磁性颗粒膜中的巨磁电阻（CMR）机制;在顺磁－铁磁相变区,既有颗粒贡献又有界面的隧道贡献,这一理论模型与多晶La0.825Sr0.175MnO3中的实验结果很好地吻合。     

Antisymmetric magnetoresistance in magnetic multilayers with perpendicular anisotropy

While magnetoresistance (MR) has generally been found to be symmetric in applied field in nonmagnetic or magnetic metals, we have observed antisymmetric MR in Co/Pt multilayers. Simultaneous domain imaging and transport measurements show that the antisymmetric MR is due to the appearance of domain walls that run perpendicular to both the magnetization and the current, a geometry existing only in materials with perpendicular magnetic anisotropy. As a result, the extraordinary Hall effect gives rise to circulating currents in the vicinity of the domain walls that contributes to the MR. The antisymmetric MR and extraordinary Hall effect have been quantitatively accounted for by a theoretical model.     

Magnetoresistance in magnetic domain wall systems

The contribution to the magnetoresistance (MR) was calculated for a single magnetic domain wall present in a small 2D impure ferromagnetic wire. On assuming low-temperatures and spin-independent impurity scattering the mechanism responsible for a positive contribution to MR is quantum interference. It is found that the contribution increases with impurity concentration and reduces with the width of the wall. The influence on the MR of a homogeneous electric field is proved to be spin-dependent.     

Anisotropic magnetoresistance in lightly doped La(2)-(x)Sr(x)CuO(4): impact of antiphase domain boundaries on the electron transport

Detailed behavior of the magnetoresistance (MR) is studied in lightly doped antiferromagnetic La(1.99)Sr(0.01)CuO(4), where, thanks to the weak-ferromagnetic moment due to spin canting, the antiferromagnetic (AF) domain structure can be manipulated by the magnetic field. The MR behavior demonstrates that CuO(2) planes indeed contain antiphase AF-domain boundaries in which charges are confined, forming antiphase stripes. The data suggest that a high magnetic field turns the antiphase stripes into in-phase stripes, and the latter appear to give better conduction than the former, which challenges the notion that the antiphase character of stripes facilitates charge motion.     

Hysteresis magnetoresistance and micromagnetic modeling of Ni microbelts

Magnetization reversal process in a single nickel microbelt is investigated by measuring magnetoresistance (MR). A hysteresis MR curve is observed, which consists of a reversible bell-shaped curve under high magnetic field and an irreversible discontinuity under low magnetic field. A micromagnetic simulation is performed for understanding the underlying physics behind the MR curve. The hysteresis is ascribed to the competition of exchange energy and Zeeman energy, and the irreversible discontinuity is attributed to the formation of domain walls and vortices.     

Large magnetoresistance at room-temperature in small-molecular-weight organic semiconductor sandwich devices

We present an extensive study of a large, room temperature magnetoresistance (MR) effect in tris-(8-hydroxyquinoline) aluminum sandwich devices. The effect is similar to that previously discovered in π-conjugated polymer devices. We characterize this effect and discuss its dependence on magnetic field direction, voltage, temperature, film thickness, and electrode materials. The MR effect reaches almost 10% at fields of 10 mT at room temperature. The effect shows only a weak temperature dependence and is independent of the sign and direction of the magnetic field. Measuring the devices' current-voltage characteristics, we find that the current depends on the voltage through a power-law. We find that the magnetic field changes the prefactor of the power-law. We also studied the effect of the magnetic field on the electroluminescence (MEL) of the devices and analyze the relationship between MR and MEL.     

Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high-mobility (100) Si-inversion layers

We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with respect to the magnetic field in the 2D plane. The magnetoresistance is almost isotropic; this result does not support the suggestion of its orbital origin. In the hopping regime, however, the MR contains a weak anisotropic component that is nonmonotonic in the magnetic field. We found that the field, at which the MR saturates, varies for different samples by a factor of 2 at a given carrier density. Therefore, the saturation of the MR cannot be identified with the complete spin polarization of free carriers.     

Influence of superparamagnetic regions on the giant magnetoresistance of electrodeposited Co–Cu/Cu multilayers

The room-temperature magnetoresistance (MR) of electrodeposited Co–Cu/Cu multilayers was investigated. Samples were prepared on either a polycrystalline Ti foil or on a silicon wafer covered with a Ta buffer and a Cu-seed layer. The field dependence of the magnetoresistance was analyzed by decomposing the GMR into ferromagnetic (FM) and superparamagnetic (SPM) contributions, whereby the field dependence of the latter could be described by a Langevin function. In order to better understand the influence of the deposition conditions on the GMR in electrodeposited multilayers, the evolution of the relative importance of the two GMR contributions is discussed in terms of the Co dissolution process during the Cu deposition pulse.     

Magnetoresistance effect in vertical NiFe/graphene/NiFe junctions

For convenient and efficient verification of the magnetoresistance effect in graphene spintronic devices, vertical magnetic junctions with monolayer graphene sandwiched between two NiFe electrodes are fabricated by a relatively simple way of transferring CVD graphene onto the bottom ferromagnetic stripes. The anisotropic magnetoresistance contribution is excluded by the experimental result of magnetoresistance (MR) ratio dependence on the magnetic field direction. The spin-dependent transport measurement reveals two distinct resistance states switching under an in-plane sweeping magnetic field. A magnetoresistance ratio of about 0.17 % is obtained at room temperature and it shows a typical monotonic downward trend with the bias current increasing. This bias dependence of MR further verifies that the spin transport signal in our device is not from the anisotropic magnetoresistance. Meanwhile, the I—V curve is found to manifest a linear behavior, which demonstrates the Ohmic contacts at the interface and the metallic transport characteristic of vertical graphene junction.     

Anomalous electrical transport properties of a quenched iron film system

An iron film system, deposited on glass surfaces by thermal evaporation method and quenched with a floating oil layer immediately after the deposition, has been fabricated. The temperature dependence of the resistance and the transversal magnetoresistance (MR) of the iron films have been studied. The experiment shows that, as the temperature decreases, the sample resistance increases first and then drops monotonically, finally it increases again. Furthermore, a crossover of MR from positive to negative is observed as the magnetic field increases. It is proposed that these anomalous phenomena originate from the characteristic microstructure of the samples.     

Enhancement of magnetoresistance sensitivity in Co/Cu/NiFe trilayers by softening the Co hard layer

Co/Cu/NiFe trilayers were prepared by sputtering without magnetic field applied. We have found that the Co(2 nm)Cu(1 nm)NiFe(2 nm) trilayer using Ta as buffer layer exhibits an enhanced magnetoresistance (MR) sensitivity by a factor of more than 6 and a low saturation field of 9.3 Oe. Experimental results have demonstrated that the low saturation field is attributed to the softening of the Co layer by depositing the Co(2 nm)Cu(1 nm)NiFe(2 nm) sandwich on Ta layer. The decrease of the coercivity of the Co layer also plays an important role in the enhancement of MR sensitivity by reducing the effective coercivity of the NiFe layer, which is discussed in terms of the change in interlayer coupling.     

Spin‐dependent‐magnetoresistance control by regulation of heat treatment temperature for magnetite nano‐particle sinter

The control of spin‐dependent‐magnetoresistance by regulation of the heat treatment (HT) temperature for magnetite (Fe₃O₃) nano‐particle sinter (MNPS) has been studied. The average nano‐particle size in the MNPS is 30nm and the HT was carried out from 400°C to 800°C. The HT of the MNPS varies the coupling form between adjacent magnetite nano‐particles and the crystallinity of that. The measurements on electrical resistance (ER), magnetoresistance (MR) and magnetization were performed between 4K and 300K. The behavior of the ER and MR considerably changes at the HT temperature of ～600°C. Below ～600°C the ER indicates the variable‐range‐hopping conduction behavior and the MR shows the large intensity in a wide temperature region. Above ～600°C the ER shows the indication of the Verwey transition near 110K like a bulk single crystal and the MR designates the smaller intensity. We consider that below ～600°C the ER and MR are dominated by the grain‐boundary conduction and above ～600°C those are determined by the inter‐grain conduction. The magnetic field application to the grain‐boundary region is inferred to cause the large enhancement of the MR.     

Interface scattering and spin-dependent transport in granular magnetite

We have prepared nearly monodisperse Fe₃O₄ of ∼50 nm by a chemical route and investigated the electrical and magnetic transports of the composite granular system. A Verwey transition is observed in the vicinity of 113 K. Above and below the Verwey transition, the electrical transport is dominated by electron hopping behavior showing a good linear relation between resistance and T^−1/2. The magnetoresistance (MR) increases with the applied field and does not follow the magnetization to reach the saturation at 10 KOe field. This indicates that the MR is mainly arising from the spin-dependent scattering of electrons through the grain boundaries. The temperature dependence of MR shows it has the highest MR value near the Verwey transition.     

Inversion of magnetoresistance in organic semiconductors

We report that organic semiconductors such as alpha-sexithiophene (alpha-6T) have magnetoresistance (MR) with unexpected sign changes; depending on applied voltage, temperature, and layer thickness, the resistance may either increase or decrease upon application of a small magnetic field (<100 mT). We propose that MR and the inversion of MR are due to the role of hyperfine interaction in a magnetic field, as illustrated by the recombination-limited regime.     

In situ resistivity and magnetoresistance studies of Co/Au(111) single layers and bilayers

We report here on resistance and magnetoresistance (MR) studies of ultrathin Co/Au(111) single sandwiches and bilayers with perpendicular magnetization. Resistance of the films was measured in situ in ultrahigh vacuum, during depositions and as a function of a perpendicular applied magnetic field. A large MR variation with the thickness of Au coverage was observed and compared to calculations. The coercive field of the Co films shows a drastic variation with the Au coverage thickness, which reflects the theoretical anisotropy variation. It was measured as a function of temperature. For the first time, the effect of interlayer interaction on the resistivity of a Co bilayer during the growth of Co top layer, is evidenced and compared to calculations. Finally, hysteresis loops of strongly antiferromagnetically coupled bilayers are investigated. Received 3 November 1998 and Received in final form 18 January 1999     

Origin of the anomalous low temperature upturn in the resistivity of the electron-doped cuprate superconductors

The temperature, doping, and field dependences of the magnetoresistance (MR) in Pr2-xCexCuO4-delta films are reported. We distinguish between orbital MR, found when the magnetic field is applied perpendicular to the ab planes, and the nearly isotropic spin MR. The latter, the major MR effect in the superconducting samples, appears in the region of the doping-temperature phase diagram where drho/dT<0, or an upturn in the resistivity appears. We conclude that the upturn originates from spin scattering processes.     

Magnetoresistance anisotropy in a hexagonal lattice of Co antidots obtained by thermal evaporation

Patterned soft magnetic materials are eligible for use in magnetic random access memories. A hexagonal-lattice pattern of circular antidots was produced by optical lithography in a Co film. In order to test the effect of geometry on the local magnetisation configuration of such a structure, we performed room-temperature angle-resolved magnetisation measurements aimed to check the pinning of domain walls by the pattern's lattice. Magnetoresistance (MR) room-temperature measurements were performed at various angles between the magnetic field direction and the macroscopic electrical current vector, to clarify whether and how the local current density configuration affects the MR response. We found that the magnetoresistance is of anisotropic type (AMR) and has a local origin. Furthermore, the largely unsaturating behaviour of MR at high fields may be explained only by considering that tiny portions of the pattern constitute highly frustrated regions and align their magnetisation at rather high fields. A simplified model based on a local anisotropy term is shown to account for the experimental results for both M and MR.