Carrier-mediated ferromagnetism in N co-doped (Zn, Mn)O-based diluted magnetic semiconductors

Mn-doped ZnO is anti-ferromagnetic spin glass state, however, it becomes half-metallic ferromagnets upon hole doping. In this Letter we report a theoretical study of (Zn, Mn)O system codoped with N, and show that this codoping can change the ground state from anti-ferromagnetic to ferromagnetic. We have carried out the first-principles electronic structure calculations and report total energy to estimate whether the ferromagnetic state was stable or not. Our approach is based on the spin-polarized relativistic Korringa–Kohn–Rostoker (SPR–KKR) density functional theoretical (DFT) method, within the coherent potential approximation (CPA). Self-consistent electronic structure calculations were performed within the local density approximation, using the Vosko–Wilk–Nusair parameterization of the exchange-correlation energy functional. Our results for energy difference between ferromagnetic sate and spin glass state as well as their dependence on concentrations were presented and discussed.     

Experimental and theoretical studies on the magnetic property of carbon-doped ZnO

Intrinsic room-temperature ferromagnetism was detected over n-type carbon-doped ZnO prepared through solid-state reaction. Our results of first-principle calculations based on density functional theory revealed that the CZn₄O₁₂ unit is the origin of magnetic moment in the carbon-doped ZnO system. The carbon component has a significant contribution to the net magnetic moment, and any oxygen vacancy present in CZn₄O₁₂ has a negative effect on the magnetic properties of the system. Moreover, both antiferromagnetic and ferromagnetic interactions are predicted among carbon atoms located at different CC distances. The result suggests that the defect density influenced by the distribution of carbon has a significant effect on the magnetic properties of the carbon-doped ZnO system.     

Structural, electronic and magnetic properties of Cr-doped (ZnTe)12 clusters

We have studied the energetics and magnetism in Cr-doped (ZnTe)₁₂ clusters by first principles density functional calculations. Total energy calculations suggest that it is energetically most favourable for Cr atoms to substitute at Zn sites. Both ferromagnetic and anti-ferromagnetic coupling between the Cr atoms exist depending on the Cr-Cr distance in the clusters. The magnetic exchange coupling between Cr atoms is short-ranged.     

Ferromagnetic ordering in dilute magnetic dielectrics with and without free carriers

The state of art in the theoretical and experimental studies of transition metal doped oxides (dilute magnetic dielectrics) is reviewed. The available data show that the generic non-equilibrium state of oxide films doped with magnetic impurities may either favor ferromagnetism with high Curie temperature or result in highly inhomogeneous state without long-range magnetic order. In both case concomitant defects (vacancies, interstitial ions) play crucial part.     

Ab initio study of electronic structures and magnetism in ZnMnTe and CdMnTe diluted magnetic semiconductors

In this work, we aimed to examine the spin-polarized electronic band structures, the local densities of states as well as the magnetism of ZnMnTe- and CdMnTe-diluted magnetic semiconductors (DMSs) in the ferromagnetic phase, and with 25% of Mn. The calculations are performed by the recent ab initio full potential augmented plane waves plus local orbitals (FP−L/APW+lo) method within the spin-polarized density-functional theory and the local spin density approximation. We have determined the exchange splittings produced by the Mn d states: Δ_x(d) and Δ_x(pd), and we found that the effective potential for the minority spin is more attractive than that for the majority spin. Also, we show the nature of the bonding from the charge spin-densities calculations, and we calculate the exchange constants N₀α and N₀β, which mimics a typical magneto-optical experiment. The calculated total magnetic moment is found to be equal to 5μ_B for both DMSs. This value indicates that every Mn impurity adds no hole carriers to the perfect ZnTe and CdTe crystals. Furthermore, we found that p–d hybridization reduces the local magnetic moment of Mn and produces small local magnetic moments on the nonmagnetic Te, Zn and Cd sites.     

Stabilization of ferromagnetism in Mn doped ZnO with C co-doping

We present a method for stabilizing ferromagnetism in Mn doped ZnO. We find that Mn doped ZnO show anti-ferromagnetic order in the absence of additional carriers. When Mn doped ZnO is co-doped with C atom at O sites ferromagnetic state gets stabilized. The C doping creates holes which leads to stabilization of ferromagnetic state via hole mediated double exchange mechanism.     

The magnetic property of carbon-doped TiO2

Despite carbon and TiO₂ are nonmagnetic, we detected ferromagnetism at room temperature over samples of carbon-doped TiO₂. The materials were prepared by standard solid-state reaction and sintered either in an argon or nitrogen atmosphere. According to Raman results, the samples sintered in nitrogen showed lower D-bond (disordered) and G-bond (graphitic) concentration, plausibly a result of nitrogen incorporation into the carbon-doped TiO₂ materials. All the samples are ferromagnetic at room temperature. With increase of carbon concentration, there is decline of magnetic moment per carbon (in carbide form) due to antiferromagnetic interaction among the carbon atoms. Compared to the sample sintered in argon, the one sintered in nitrogen is lower in magnetic moment due to partial replacement of carbon atoms by nitrogen atoms. We found that the electrons-mediated mechanism is more suitable than the holes-mediated one for the explanation of ferromagnetism of the carbon-doped TiO₂ materials.     

Orbital and magnetic structure of quasi-1D cobaltites: Ab initio calculations and experiment

The magnetic properties of the orbitally degenerate quasi-one-dimensional cobaltites Sr_xBa_1−xCoO₃ are explained on the basis of a phase separation phenomenon. Noninteracting magnetic particles embedded in a nonferromagnetic matrix develop in the system. Details are given about the electronic and magnetic structure for x=0,0.2$x=0,0.2$ and 0.5. At x=0.5$x=0.5$, the geometry of the CoO₆ trigonally distorted octahedra changes by about 1–2%, but magnetic particles get 3 times bigger, compared to the parent compound, with the corresponding changes in the magnetic properties. The electronic structure of the Co⁴⁺ ion, however, stays roughly unchanged.     

Theoretical study of structural, optical and electrical properties of zirconium-doped zinc oxide

The structural, optical and electrical properties of zirconium-doped zinc oxide have been investigated by first principle calculations. Three possible structures including substitutional Zr for Zn (Zr_Zn), interstitial Zr (Zr_i) and substitutional Zr for O (Zr_O) are considered. The results show that the formation energy of Zr_Zn defect is the lowest, which indicates that Zr_Zn defect forms easier and its concentration may be the highest in the samples. It is also found that as the proportion of Zr increases, the lattice constants increase while the optical band gap first becomes larger and then smaller, which are consistent with our recently experimental results. The electronic structure calculations display that as Zr_Zn defect is introduced into ZnO, the Fermi-level shifts to the conduction band, and there are excess electrons in the conduction band, which may be a possible reason of the good conductivity of Zr doped ZnO film.     

First‐principles study of the electronic structure and the associated magnetism of carbon‐doped TiO2

Based on first‐principles calculations, the electronic structure and the associated magnetism of carbon‐doped rutile TiO₂ have been investigated in the frame of the generalized gradient approximation (GGA). We find that the carbon substitutional oxygen ions can induce a magnetic moment of about 2.0µ_B/C, but the carbon substitutional titanium cannot provide any magnetism. Graphics of the spin density show that the magnetism is from the structure distortion around the carbon substitutional oxygen ions in the (110) plane of primitive TiO₂. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Room-Temperature Ferromagnetism in Semiconducting TiO2-δ Nanoparticles

TiO2-δ nanoparticles are synthesized by the sol-gel method and annealed under different reducing atmosphere. The x-ray diffraction patterns show that anatase is the dominant phase with small amounts of the futile phase of TiO2-δ for all the samples. Magnetic measurements indicate that the samples annealed in reducing atmosphere exhibit unprecedented room-temperature ferromagnetism, in particular, the saturation magnetization Ms is up to about 8.6 × 10^-3 emu/g for the sample annealed in H2/Ar mixture. Analysis of the x-ray photoelectron spectroscopy spectra for the samples processed under different conditions indicates that the amounts of Ti^3＋ or Ti^2＋ cations, namely, the concentration of oxygen vacancies, increase with intensifying reducing atmosphere during processing, which shows that ferromagnetism in this material strongly depends on the concentration of oxygen vacancies. The relationships between the ferromagnetism and the crystal structure as well as the grain size in this material are also discussed.     

Structural, magnetic properties and photoemission study of Ni-doped ZnO

Nickel-doped ZnO (Zn_1−xNi_xO) have been produced using rf magnetron sputtering. X-ray diffraction measurements revealed that nickel atoms were successfully incorporated into ZnO host matrix without forming any detectable secondary phase. Ni 2p core-level photoemission spectroscopy confirmed this result and suggested Ni has a chemical valence of 2+. According to the magnetization measurements, no ferromagnetic but paramagnetic behavior was found for Zn_0.86Ni_0.14O. We studied the electronic structure of Zn_0.86Ni_0.14O by valence-band photoemission spectroscopy. The spectra demonstrate a structure at ∼2 eV below the Fermi energy E_F, which is of Ni 3d origin. No emission was found at E_F, suggesting the insulating nature of the film.     

Great influence of the oxygen vacancies on the ferromagnetism in the Co-doped ZnO films

The ZCO (Co-doped ZnO) films were prepared by using submolecule-doping technique, where the magnetic sputtering of Co and ZnO were alternatively performed onto silicon substrates. The prepared ZCO films were then annealed at different temperatures, and the dependence of the ferromagnetism on annealing temperature was studied. It is found that the saturation magnetization of our samples decreases with the increase of annealing temperature. This behavior is possibly due to the decrease of oxygen vacancies with the increase of the annealing temperature.     

Anion and cation vacancies in CdTe

The cadmium vacancy (V_Cd) and the tellurium vacancy (V_Te) in CdTe are identified by Electron Paramagnetic Resonance (EPR). The EPR spectrum of the singly ionised V_Te reveals cubic (unpertubed) symmetry and the hyperfine structure shows that the unpaired electron is equally spread over the four Cd neighbors. Further figand hyperfine interactions with the more distant neighbors are resolved by Electron Nuclear Double Resonance (ENDOR). The V_Cd is a double acceptor and the EPR spectrum is observed in its singly negative charge state. The symmerty is found to be trigonal, which can be explained in a model in which the hole occupies a dangling bondt ₂ orbital and the orbital degeneracy is removed by a static Jahn-Teller distortion. The hyperfine interaction shows that the hole is localised on one of the four Te neighbors.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

First Principles Study of Aluminium Vacancy in Wurtzite Aluminium Nitride

We report that the aluminium vacancy in wurtzite AlN brings about two impurity levels e and a₂ in the band gap, not just one single t₂ level. The aluminium vacancy carries a magnetic moment of 1μ_B in the ground state. The molecule orbit of the aluminium vacancy becomes e^↑↑a₂^↓ rather than e^↑↑a₂^↓. The calculation is carried out by using the CASTEP code. The intrinsic symmetry of wurtzite AlN is the driving force for this spin splitting. Finally the symmetry of wurtzite AlN results in an anti-ferromagnetic coupling between the aluminium vacancies, as is predicted. Our findings are helpful to gain a more through understanding of the structural and spin property of aluminium vacancy in wurtzite AlN.     

First-principles study of the thermal properties of half-metallic ferromagnetic systems

The origin of the half-metallicity is different in diluted magnetic semiconductors and Heusler alloys. I briefly review our earlier work on (GaMn)As and (GaMn)N focusing on the relation between the half-metallicity and the strength of the interatomic exchange interactions. This relation is governed by the properties of the valence-band holes. In Heusler alloys the factors determining the thermal behavior are distinct. Here the relation between half-metallicity and the longitudinal fluctuations of atomic moments is considered. The temperature dependence of the Ni magnetization in NiMnSb is studied.     

Oxygen vacancy induced ferromagnetism in rutile TiO2–x

First‐principles LDA + U calculations have been performed to study the effects of oxygen vacancies (V_O) on the electronic structure and magnetism in undoped rutile TiO_2–x . Instead of treated as an adjustive parameter, the value of U was determined by constrained‐density‐functional calculations. The calculated electronic structure reveals that the valence electrons released by V_O would occupy mainly the neighboring Ti:3d orbital which then becomes spin‐polarized due to intra‐atomic exchange interaction, thereby giving rise to the half‐metallic ferromagnetism. The magnetization induced by V_O in rutile TiO_2–x is almost proportional to the V_O concentration (x) for x > 0.0625, and becomes 0 for x ≤ 0.0417. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ab initio calculation and analysis of the properties of digital magnetic heterostructures and diluted magnetic semiconductors of IV and III-V groups

We present the first-principles calculations of digital magnetic heterostructures Si/M, Ge/M. GaAs/M, GaSb/M, GaN/M and GaN/M (50%) with M=Cr, Mn, Fe, and Co. The interaction between magnetic dopants results in a wide spin-polarized two-dimensional band inside the gap. It is found that beginning occupation of the minority-spin band greatly increases the energy of the ferromagnetic (FM) state and leads, as a rule, to the antiferromagnetic (AFM) spin ordering. This mechanism causes transition to the AFM state, when interaction between magnetic atoms is too strong, and defines the optimum of Curie temperature as a function of transition element concentration in magnetic layers.     

Structural study of Mn-doped ZnO films by TEM

The structural study of diluted magnetic semiconductors is important for interpreting the ferromagnetic behavior associated with the materials. In the present work, a series of low concentration Mn-doped ZnO thin films synthesized by pulsed laser deposition was studied by electron microscopy. All films show the wurtzite structure with (001) preferred growth orientation on the Si substrate. Electron diffraction experiments indicate the deterioration of the growth orientation in some areas of the films with increasing Mn concentration, and the existence of a secondary phase, of Mn₂O₃-type, in the films with larger Mn concentrations. High-resolution electron microscopy images confirm the existence of the secondary phase in the grain boundary of the Mn-doped ZnO phase. The magnetic properties of Mn-doped ZnO are discussed in relation to the structures of the films.     

Synthesis and magnetic properties of Mn doped ZnO nanowires

Mn doped ZnO nanowires have been synthesized using a simple autocombustion method. The as-synthesized Mn doped ZnO nanowires were characterized by X-ray diffraction and transmission electron microscopy. An increase in the hexagonal lattice parameters of ZnO is observed on increasing the Mn concentration. Optical absorption studies show an increment in the band gap with increasing Mn content, and also give evidence for the presence of Mn²⁺ ions in tetrahedral sites. All Zn_1−xMn_xO (0≤x≤0.25) samples are paramagnetic at room temperature. However, a large increase in the magnetization is observed below 50 K. This behavior, along with the negative value of the Weiss constant obtained from the linear fit to the susceptibility data below room temperature, indicate ferrimagnetic behavior. The origin of ferrimagnetism is likely to be either the intrinsic characteristics of the Mn doped samples, or due to some spinel-type impurity phases present in the samples that could not be detected.