High frequency conductivity in the charge density wave semiconductor TaS3

We report the observation of frequency dependent conductivity σ (ω) in the charge density wave (CDW) semiconductor TaS₃. Based on σ (ω) and other evidences, we sugest that three different temperature regions occur in this compound: 1-D fluctuating CDW region above T_MI, a coherent CDW state below T_MI, and a CDW glass state at low temperatures.     

Effects of ZnO film thickness on electrical and magnetoresistance characteristics of La0.8Sr0.2MnO3/ZnO heterostructures

The La_0.8Sr_0.2MnO₃/ZnO heterostructures with different thicknesses of ZnO films are fabricated by using RF magnetron sputtering technique. The heterojunctions exhibit excellent rectifying properties at 300 K. At low temperatures the temperature dependent junction resistance exhibits a metal-insulator transition like behavior. A magnetic field strongly impacts on electrical characteristics of La_0.8Sr_0.2MnO₃/ZnO p-n junctions, i.e., depressing the junction resistance greatly and driving the metal-insulator transition temperature (T_MI) towards higher temperatures. Large magnetoresistance is observed below T_MI, and it increases with increasing magnetic field and almost saturates at 5 T, i.e., above −90% at 100 K and 5 T.     

Electrical conductivity and low field magnetoresistance in polycrystalline La1−xKxMnO3 pellets prepared by pyrophoric method

Electrical conductivity and magnetoresistance of a series of monovalent (K) doped La_1−xK_xMnO₃ polycrystalline pellets prepared by pyrophoric method have been reported. K doping increases the conductivity as well as the Curie temperature (T_C) of the system. Curie temperature increases from 260 to 309 K with increasing K content. Above the metal-insulator transition temperature (T>T_MI), the electrical resistivity is dominated by adiabatic polaronic model, while in the ferromagnetic region (50<T<T_MI), the resistivity is governed by several electron scattering processes. Based on a scenario that the doped manganites consist of phase separated ferromagnetic metallic and paramagnetic insulating regions, all the features of the temperature variation of the resistivity between ∼50 and 300 K are described very well by a single expression. All the K doped samples clearly display the existence of strongly field dependent resistivity minimum close to ∼30 K. Charge carrier tunneling between antiferromagnetically coupled grains explains fairly well the resistivity minimum in monovalent (K) doped lanthanum manganites. Field dependence of magnetoresistance at various temperatures below T_C is accounted fairly well by a phenomenological model based on spin polarized tunneling at the grain boundaries. The contributions from the intrinsic part arising from DE mechanism, as well as, the part originating from intergrannular spin polarized tunneling are also estimated.     

Low temperature magnetoresistance in La1.32Sr1.68Mn2O7 layered manganite under hydrostatic pressure

The La_1.32Sr_1.68Mn₂O₇ layered manganite system has been studied by the low temperature electrical resistance and magnetoresistance under hydrostatic pressure up to 25 kbar. We have observe both, a Curie temperature (T_C) and a metal-insulator transition (T_MI) at 118 K in the ambient pressure. The applied pressure shifts the T_MI to higher temperature values and induces a second metal-insulator transition (T²_MI) at 90 K, in the temperature dependence of resistivity measurements. Also, the pressure suppresses the peak resistance abruptly at T_C. When an external field of 5 T is applied, we have observed a large negative magnetoresistance of 300% at the transition temperature and a 128% at 4.5 K. However, the increased pressure decreases the magnetoresistance ratio gradually. When the pressure reaches its maximum available value of 25 kbar, the magnetoresistance ratio decreases at a rate of 1.3%/kbar. From our experimental results, the decrease of magnetoresistance ratio with pressure is explained by the pressure induced canted spin state which is not favor for the spin polarized intergrain tunneling in layered manganites.     

Metal-insulator transition induced by the magnetic field in n-type GaSb

The metal-insulator (MI) transition induced by a magnetic field was evidenced for the first time in compensated n-type GaSb layers grown by molecular beam epitaxy. The free electron densities were in the low 10¹⁶ cm⁻³ range or even slightly lower, so that the zero-field 3D electron gas was degenerate and, at the B_MI magnetic field of the MI transition, it populates only the spin-split 0⁽⁺⁾ Landau level (extreme quantum limit). On the metallic side of the MI transition a T^1/3 dependence of the conductivity was assumed to fit the low-T data and to estimate the B_MI value, which resulted of 9.1 T in the purest sample. The MI transition manifests in a strong increase of the diagonal resistivity with the magnetic field, but not of the Hall coefficient, suggesting that the apparent electron density is practically constant, whereas the mobility varies strongly. The evidence of a maximum in the temperature dependence of the Hall coefficient has been explained through a two channels transport mechanism involving localized and extended states.     

Specific features of the behavior of optical properties upon the metal-insulator transition in EuBaCo<Subscript>2</Subscript>O<Subscript>5+δ</Subscript>

The temperature dependences of the optical properties and the electrical resistivity for EuBaCo₂O_5+δ single crystals are investigated. At temperatures below the metal-insulator transition (T _MI = 340 K), the electrical resistivity is well approximated by the relationship ρ = ρ₀exp(T/T ₀)^1/4. The optical band gap E _g = 0.05 eV for the insulating phase is underestimated as compared to the theoretical value. The specific features in the dispersion of the optical conductivity and the real part of the complex permittivity upon the metal-insulator transition are determined. It is demonstrated that the optical response from charge carriers on the metal side of the metal-insulator transition is caused by the redistribution of the spectral weight of the optical conductivity from the high-energy range to the low-energy range and exhibits a strongly incoherent character. The revealed features are associated with the manifestation of the strongly correlated metallic state.     

Origin of the non-linear pressure effects in perovskite manganites: Buckling of Mn-O-Mn bonds and Jahn-Teller distortion of the MnO6 octahedra induced by pressure

High-pressure resistivity and X-ray diffraction measurements were conducted on La_0.85MnO_3−δ at ∼6 and ∼7 GPa, respectively. At low pressures the metal-insulator transition temperature (T_MI) increases linearly up to a critical pressure, P^* ∼3.4 GPa, followed by reduction in T_MI at higher pressure. Analysis of the bond distances and bond angles reveals that a bandwidth increase drives the increase in T_MI below P^*. The reduction in T_MI at higher pressures is found to result from Jahn-Teller distortions of the MnO₆ octahedra. The role of anharmonic interatomic potentials is discussed.     

Temperature dependence of electroresistance for La0.67Ba0.33MnO3 manganite

The influence of dc biasing current on temperature dependence of resistance of La_0.67Ba_0.33MnO₃ bulk sample is reported. A decrease in the resistance (electroresistance) on the application of higher bias current is observed. The electroresistance is maximum at metal-insulator transition temperature (T_MI) and decreases when the temperature is either increased or decreased from T_MI. A two-phase model is proposed to explain the occurrence of electroresistance. The higher bias current leads to an increase in alignment of spins and thus, in turn, leads to an increase in spin stiffness coefficient and decrease in the resistance at T_MI.     

Electronic transport and magnetic studies of La1−xCax−0.08Sr0.04Ba0.04MnO3

Lanthanum based mixed valence manganite system La_1−xCa_x−0.08Sr_0.04Ba_0.04MnO₃ (LCSBMO; x=0.15, 0.24 and 0.33) synthesized through the sol-gel route is systematically investigated in this paper. The electronic transport and magnetic susceptibility properties are analyzed and compared, apart from the study of unit cell structure, microstructure and composition. Second order phase transition is observed in all the samples and significant difference is observed between the insulator to metal transition temperature (T_MI) and paramagnetic (PM) to ferromagnetic (FM) transition temperature (T_C). In contrast to the insulating FM behaviour usually observed in La_1−xCa_xMnO₃ (LCMO) for x=0.15, a clear insulator to metal transition is observed for LCSBMO for the same percentage of lanthanum. The temperature dependent resistivity of polycrystalline pellets, when obeying the well studied law ρ=ρ_o+ρ₂T² for T<T_MI, is observed to differ significantly in the values of ρ_o and ρ₂, with the electrical conductivity increasing with x. The variable range hopping model has been found to fit resistivity data better than the small polaron model for T>T_MI. AC magnetic susceptibility study of the polycrystalline powders of the manganite system shows the highest PM to FM transition of 285 K for x=0.33.     

Pulsed laser deposition of NdNiO3 thin films

We report the structural and transport properties of NdNiO₃ thin films prepared via pulsed laser deposition over various substrates. The films were well textured and c-axis oriented with good crystalline properties. The electrical resistivity of the films undergoes a metal-insulator transition, depending on the deposition process. Well-defined first order metal-insulator phase transition (T_MI) was observed in the best quality films without high pressure processing. Various growth conditions such as substrate temperature, oxygen pressure and thickness were varied to see their influence on T_MI. Deposition temperature was found to have a great impact on the electrical and structural properties of these films. Further the films deposited on LaAlO₃ substrate were found to be highly oriented with uniform grain size as observed from X-ray diffraction and atomic force microscopy, whereas those on Si substrate were polycrystalline, dense and randomly oriented.     

Low-temperature thermal conductivity of terbium-gallium garnet

Thermal conductivity of paramagnetic Tb₃Ga₅O₁₂ (TbGG) terbium-gallium garnet single crystals is investigated at temperatures from 0.4 to 300 K in magnetic fields up to 3.25 T. A minimum is observed in the temperature dependence κ(T) of thermal conductivity at T _min = 0.52 K. This and other singularities on the κ(T) dependence are associated with scattering of phonons from terbium ions. The thermal conductivity at T = 5.1 K strongly depends on the magnetic field direction relative to the crystallographic axes of the crystal. Experimental data are considered using the Debye theory of thermal conductivity taking into account resonance scattering of phonons from Tb³⁺ ions. Analysis of the temperature and field dependences of the thermal conductivity indicates the existence of a strong spin-phonon interaction in TbGG. The low-temperature behavior of the thermal conductivity (field and angular dependences) is mainly determined by resonance scattering of phonons at the first quasi-doublet of the electron spectrum of Tb³⁺ ion.     

Electrical conductivity and NMR studies in paraelastic phase of Tl2SeO4

We have carried out the electrical conductivity and NMR measurements and investigated the characteristic features of the electrical conductivity in a paraelastic phase of Tl₂SeO₄. It was found from electrical conductivity measurement that the activation energy in the paraelastic phase (above T_c(= 661 K)) is 0.98 eV. We also found that ²⁰⁵Tl-NMR line width drastically decreases above T_c and becomes approximately 0.5 Gauss. This result indicates that in the paraelastic phase the mobile Tl ions exist. Moreover this result is consistent with the existence of the anomalously large hopping motion of Tl ions observed in X-ray diffraction measurement. Furthermore the activation energy estimated from the motional narrowing of ²⁰⁵Tl-NMR absorption line is 0.92 eV and is in agreement with that obtained from the conductivity measurement. From these results, it is deduced that the mobile Tl ions play an important role in the appearance of electrical conductivity in the paraelastic phase.     

Electrical transport of (1−x)La0.7Ca0.3MnO3+xAl2O3 composites

We report the resistivity (ρ)-temperature (T) patterns in (1-x)La_0,7Ca_0,3MnO₃+xAl₂O₃ composites (0≤x≤0.05) over a temperature regime of 50-300 K. Al₂O₃ addition has increased the resistivity of these composites. The Curie temperature (T_C) is almost independent on the Al₂O₃ content and is about 250 K for all the samples, while the metal-insulator transition temperature (T_MI) decreases with increasing Al₂O₃ content. Based on the phenomenological equation for conductivity under a percolation approach, which is dependent on the phase segregation of ferromagnetic metallic clusters and paramagnetic insulating regions, we fitted the experimental data (ρ−T) from 50 to 300 K and find that the activation barrier increases as Al₂O₃ content increases.     

Proton activity and spontaneous strain of Cs3H(SeO4)2 in the phase transition at 369 K

We have investigated the origin of the change in proton activity in the phase transition at T_II-III (=369 K) in Cs₃H(SeO₄)₂ from the viewpoint of its ferroelasticity by using ¹H NMR and X-ray measurements. It is found that the second moment of the ¹H NMR absorption line rapidly decreases at T_II-III with increasing temperature. From this result, we conclude that the hopping motion of a proton, which is the precursor motion in the superprotonic phase, becomes more active above T_II-III. This result is consistent with the fact that the electrical conductivity in phase II is larger than that in phase III. Furthermore, it is also found that the spontaneous strain decreases abruptly at T_II-III. From these results, it is deduced that the decrease in the spontaneous strain at T_II-III causes the increase in the proton activity at T_II-III. In addition, it is deduced that the increase in proton activity and the decrease in the spontaneous strain at T_II-III are closely related with the appearance of the superprotonic phase transition at T_I-II (=456 K).     

Epitaxial strain effects on the metal-insulator transition in V2O3 thin films

Effects of epitaxial stress on the metal-insulator transition of V₂O₃ have been studied for in the form of epitaxial thin films grown on α-Al₂O₃ (0001) and LiTaO₃ (0001) substrates. A metallic phase is stabilized down to 2 K in the V₂O₃ thin film on α-Al₂O₃ (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature T_MI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO₃ (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and T_MI in V₂O₃. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems.     

Intrinsic magnetic inhomogeneity of Eu substituted La0.7Pb0.3Mno3 single crystals

The study of magnetic and magnetotransport properties of the crystals of (La_1−yEu_y)_0.7Pb_0.3MnO₃ system has been carried out. Eu ions enter the crystals being in trivalent nonmagnetic state. Europium ions possessing of smaller ionic radius in comparison with La ions, induce local distortions of Mn–O–Mn bonds in the system that cause random distribution of magnetic exchange interactions in magnitude and, probably, in sign. The competition of magnetic interactions leads to the appearance of the inhomogeneous magnetic state in the crystals. The enhancement of concentration of Eu ions results in decrease of the Curie temperature and broadening of the inhomogeneous magnetic state area. At y=0–0.4 the coexistence of the paramagnetic phase with conductivity of the polaronic type and the ferromagnetic metallic phase is observed in a bounded temperature interval both above and below T_C. Below T_C the increasing of y up to 0.6 induces the magnetic state representing the coexistence of two different FM phases. These phases are spatially separated due to frustration of FM and AFM exchange interactions on phase boundaries. Above T_C, up to 1.6T_C ferromagnetic clusters exist in a paramagnetic matrix similar to the case of samples with y=0–0.4. Concerning electric properties, the samples with y=0–0.4 reveal the metal–insulator transition at temperature that practically coincides with T_C. The sample with y=0.6 has conductivity of insulator character up to the lowest temperatures. For all investigated compositions y=0–0.6 the CMR effect is observed in the area where the inhomogeneous magnetic state exists. The effect is determined by different conductivity of the coexisting phases, as well as by sensitivity of the inhomogeneous state to external magnetic field.     

Magnetotransport and magnetoelastic effects in Co-doped La0.7Sr0.3MnO3 nanocrystalline perovskites

La_0.7Sr_0.3Mn_1−xCo_xO₃ (x=0, 0.05, 0.1) nanoparticles, prepared by sol-gel method, were studied by means of X-ray diffraction, transmission electron microscopy, resistivity, magnetoresistance, thermal expansion and magnetostriction measurements. Results show that partial substitution of Mn by Co leads to a reduction in lattice parameters, enhancement of resistivity and room temperature magnetoresistance MR, decrease of metal-insulator transition temperature T_MI and T_C, an increase in thermal expansion coefficient, volume magnetostriction and anisotropic magnetostriction. The latter increases about one order of magnitude with 10% Co substitution. In comparison with Mn ions, the Co ions possess higher anisotropy energy, larger magnetostriction effect, smaller ionic size and spin state transitions with increase in temperature and magnetic field; this suggests that Co substitution leads to double-exchange interaction weakening, resulting in suppression of ferromagnetic long-range order and metallic state and increase of magnetic anisotropy. Furthermore, our samples have a relatively lower T_MI and T_C, higher resistivity and MR, compared with the reported values for similar compounds with larger particle sizes. This is attributed to the nanometric grain size and spin-polarized tunneling between neighboring grains.     

Anomalous charge transfer in La<Subscript>2</Subscript>CuO<Subscript>4</Subscript> near the Néel temperature: Evidence of the transition from spin liquid to two-sublattice antiferromagnetic state

The temperature dependence of the electrical resistance and thermopower of La_{2? x}Sr_xCuO_4+δ single crystals with x ? 0.003 and δ<0.05 has been studied in the temperature range from 100 to 400 K. All crystals exhibiting two-dimensional hopping conductivity via neighboring acceptor sites in the CuO₂ plane show a significant difference in the charge transfer below and above the Néel temperature T_N. This difference indicates that the loss of a two-sublattice antiferromagnetic order strongly affects the charge transport in the CuO₂ plane. The obtained data lead to a conclusion that the crystal above T_N occurs in a resonance valence bond state of the Bose type.     

Degradation of superconducting properties in MgB2 by Cu addition

The (MgB₂)_2−xCu_x (x=0-0.5) superconducting system was prepared by a solid-state reaction technique. Microstructural evolution and transport properties including resistivity versus temperature up to a magnetic field of 6 T, activation energy, thermoelectric power and Fermi energy, E_F, and the corresponding velocity, V_F, values of the samples prepared were also investigated. The XRD analysis showed a multiphase formation and no detectable solution of Cu in MgB₂. Two different impurity phases, MgCu₂ and CuB₂₄, have been identified and their peak intensity increased when the Cu concentration increased. The temperature dependence of the resistivity of the samples showed a metallic behavior down to T_c. But, for the Cu concentrations above 0.3 the superconducting phase transition completely disappeared. The magnetic field strongly affects the electrical properties. For x=0.0 samples, the transition is found to be sharp, ΔT∼1 K, but it becomes broader with increasing magnetic field and Cu concentration. The calculated values of carrier concentration, n, of the samples are showed a sharp decrease with increasing Cu content. For x=0.0 sample the n was calculated to be 12×10²¹ cm⁻³, but for the x=0.5 sample it decreased to 1.3×10²¹ cm⁻³. We found that the activation energy, U(B), decreased sharply with increasing magnetic field. According to thermoelectric power and Fermi energy, E_F, calculations the decrease of the carrier concentration by the additions of Cu into MgB₂ gives a decrease in E_F and this could be attributed to a shift of the Fermi level towards the top of the σ-hole band.     

La2/3Sr1/3MnO3/BaTiO3复合薄膜的制备及其电致磁电效应研究

使用脉冲激光沉积技术,在LaAlO₃(001)单晶基片上制备了La_2/3Sr_1/3MnO₃(LSMO)/BaTiO₃(BTO)双层薄膜.X射线衍射分析显示,LSMO层和BTO层呈现纯(001)取向.原子力显微镜研究表明,薄膜表面晶粒大小均匀,排列致密,表面均方根粗糙度为1.4 nm.复合薄膜的磁学、电学性能研究表明,其具有良好的磁学和介电性能.电输运测试显示,与在BTO层上施加正方向 关键词： 磁电效应 铁电/铁磁异质结构 脉冲激光沉积