Deep levels related to transition metals in Si under hydrostatic pressure

The influence of hydrostatic pressure up to 5×10⁸ Pa on deep levels related to transition metal impurities in silicon is determined by means of an isothermal capacitance method. Under pressure, donor levels of isolated Fe, V, Ti, and Mn shift towards the valence band in contrast to earlier results for deep chalcogen donors. This behavior is contrary to what is expected by considering only effects of hybridization. Quantitative differences between Fe, Ti, V, and, on the other hand, Mn suggest a different microscopic structure of these defects. The Fe-acceptor pairs FeB, FeAl, and FeGa move towards the valence band with a rate comparable to that of the ₁ conduction band. The thermal capture coefficients of isolated Fe, V, and Ti are found to be pressure independent up to 5×10⁸ Pa.On leave from Sony Corp., Research Center, Yokohama, Japan     

Electrical measurements of the electron irradiation induced E- and H-traps in GaAs under hydrostatic pressure

The change of resistivity of the 2.3 MeV-electron-irradiated bulk n- and p-GaAs have been measured at hydrostatic pressure up to 5 kbar at RT. Corrections for the changes in free electron and hole mobilities with pressure have been neglected. The resistivity changes are explained by a dependence on pressure of the ionisation energy of the radiation-induced E- and H-traps. The results indicate that most from these radiation- induced levels moves away from the conduction-band edge (γ_c-point) at a rate approximately (0.8?1.0)γ_G, here γ_G=11.6×10^?6 eV bar^?1 is the energy gap pressure coefficient for GaAs at RT. The high changes in ionization energies of E2 to E5-traps upon pressure are to be compared with the lower changes in ionization energies found for the deep-lying impurity levels. In accordance with the theoretical investigation it was suggested that most of the investigated radiation-induced levels in GaAs are t₂-states of Ga- and As-vacancies.     

Raman scattering in GaTe under hydrostatic pressure

Raman-active lattice vibrational modes of GaTe have been investigated at 300 K in the range 15–300 cm^?1 in equilibrium conditions under different hydrostatic pressures up to 11.25 kbar. The spectra of the Bridgman grown crystals were excited with the 1.06 μm line of the continuously operated YAG:Nd³⁺ laser. The mode-Grüneisen parameters $\text{Γ}{}_{\mathrm{j}}\text{= (}\text{1}\text{β}\text{)(}\text{1}\text{ν}{}_{\mathrm{j}}\text{) =}\text{dν}{}_{\mathrm{j}}\text{d}{}_{\mathrm{p}}$ were determined for all fourteen Raman bands observed. It is shown that there is no low frequency rigid-layer modes or Davydov pairs in Raman spectra of GaTe crystals.     

Electroreflectance in GeSi alloys under hydrostatic pressure

From the electroreflectance spectra measured under hydrostatic pressure to 7 kbar we have determined the pressure coefficients for germanium (dE₁/dP = 7.8 ± 0.4⁻⁶eV/bar, dP = 1.4 ± 0.8 10⁻⁶eV/bar), for Si (dE′_o/dP = 1 ± 1 10⁻⁶eV/bar, dE₁dP = 6.2 ± 0.4 10⁻⁶eV/bar) and for GeSi alloys in the entire composition region. For the composition 80–100% of Si which is widely discussed in the literature, we could distinguish two maxima with substantially different pressure coefficients. The absolute experimental values of dE/dP agree rather well with theoretical values which, together with composition shift of electroreflectance peaks, enable us to connect the peak E₁ predominantly with λ and L and E′_o with Г and Δ transitions in the entire composition region.     

Photoluminescence of GaSb under hydrostatic pressure

Photoluminescence measurements on GaSb samples were carried out at low temperatures (2 – 5 K) and high pressures (0 – 9 kbar). The energy shift of the direct gap was determined: $\text{d}\text{E}{}^{\mathrm{\Gamma }}\text{/dP= 14.5± 0.3 meV/kbar}$. At pressures above 8 kbar the spectra showed additional structure from the indirect L-conduction band minima. The energy shift of the L-conduction bands were determined: $\text{d}\text{E}\text{L/d}\text{P}\text{= 5.5± 1. meV/kbar.}$ From these data the critical pressure for the inversion of the two conduction bands was calculated: $\text{p}{}^{\mathrm{h}}{}_{\mathrm{c}}\text{= 10.5 ± 1. kbar}$.     

CuCl nanocrystals in alkali-halide matrices under hydrostatic pressure

CuCl nanocrystals in crystalline alkali-halide matrices have been investigated under hydrostatic pressures up to 18 GPa. The pressures of structural phase transitions in CuCl have been determined both for different nanocrystal sizes and for different matrices (NaCl, LiCl, KCl). For CuCl nanocrystals in NaCl an increase of the transition pressure with decreasing nanocrystal size is observed, which is explained by the increasing importance of surface pressure for small nanocrystals. We found higher transition pressures for the LiCl matrix than for the NaCl matrix. The reason for this is that the pressure which acts on the nanocrystal differs from the external pressure. A simple elastic model describes the effective pressure transmitted from the matrix to the nanocrystal. With CuCl nanocrystals embedded in KCl we have studied the behavior of nanocrystals during a phase transition of the matrix. Additionally we have determined the pressure coefficients of the exciton energies of the CuCl nanocrystals, which depend on the elastic properties of the matrix. Received 4 March 1999     

Resonant Raman scattering in polyacetylene under hydrostatic pressure

The results of resonant Raman scattering experiments on trans-poly-acetylene under hydrostatic pressure are reported. The measurements were performed in a diamond anvil cell. The spectra could be measured up to 44 kbar. The pressure dependence of the 1295 cm^-1 line was measured in a sapphire cell up to 17 kbar. The results show that the changes in the phonon frequencies are very small. By comparing the pressure dependence of the Raman bands with their dependence on the photon energy of the exciting laser line it is possible to determine the pressure variation of the electronic energy gap. The results are consistent with previous measurements of the absorption spectrum under hydrostatic pressure which were carried out up to 13.5 kbar. The gap is found to decrease rapidly with pressure but the decrease tends to saturate at high pressures. The results are consistent with a model in which chain-chain interaction plays a dominant role.     

DLTS investigation of GaP under hydrostatic pressure

Abstract

Deep Level Transient Spectroscopy (DLTS) was applied to nitrogen related deep electron trap 0.4 eV in green emitting diodes of GaP under hydrostatic pressure. The pressure coefficient of the level energy is determinated as equal -31 meV/kbar with respect to the valence band edge.     

Superconducting transition temperature in mercury HTSC-cuprates under hydrostatic pressure

A study is made of the properties of the homologous series of mercury HTSC-cuprates HgBa₂Ca_n−1Cu_nO_2n +2+δ with n=1–8. Experiments are conducted under pressure for samples with n=1–5. The Hg-1223 and Hg-1234 phases were synthesized using a controlled high pressure chamber. The oxygen content of an initial mixture corresponding to the Hg-1234 phase was varied by changing the composition of the initial BaO/BaO₂ oxides. The dependence of the superconducting transition temperature T _c on the lattice constant a (and, therefore, on the oxygen content) and of T _c ^max and dT _c ^max /dp on n are convex upward up to n=4, 5. The maximum values always correspond to the Hg-1223 phase. Experimental T _c ^max (n) curves for the phases with n=1–6 and dT _c ^max /dp curves for n=1–5 are compared with Anderson’s theory (the so-called RVB model). A general analysis of these results indicates that the mercury cuprates have an ideal structure for HTSC. The Hg-1223 phase is the “champion” in this ideal structure and the critical temperature corresponding to this phase (T _c =135 K) is the highest at atmospheric pressure. Zh. éksp. Teor. Fiz. 113, 1474–1483 (April 1998)     

Thermoelectric properties of tin clathrates under hydrostatic pressure

We report the temperature dependence of electrical resistance (R) and thermopower (S) of clathrate Cs₈Sn₄₄ under high pressure up to 1.2 GPa. We observe a reversible gap widening, prominent relaxation effect of R, irreversible increase of |S| under high pressure. We also find that the power factor S²σ (σ: electrical conductivity) reaches a maximum at pressure of 0.3 GPa. Comparison of the experimental results with band structure calculations suggests that the intrinsic vacancy in the clathrate structure of Cs₈Sn₄₄ plays an important role in transport properties under high pressure. Measurements on Cs₈Zn₄Sn₄₂, a clathrate which has defects other than vacancies, are compared with Cs₈Sn₄₄. The results indicate that replacing Sn by Zn has similar effect as the intrinsic vacancy on S.     

Optical absorption edge of GaS under hydrostatic pressure

The pressure variation of the optical edge of GaS has been measured. The direct exciton has been studied up to 6 kbar at 77 K and the indirect edge up to 40 kbar at 300 K. The exciton is shown to have a coefficient of ?2 ± 0.5 × 10^?6eV/bar and the indirect edge of ?ll ± 1.5× 10^?6eV/bar. A discussion of the values of the pressure coefficients for direct and indirect transitions in gallium chalcogenides is given.     

The fractional quantum hall effect under hydrostatic pressure

We report on experiments performed on a high quality, high carrier concentration heterostructure at a range of hydrostatic pressures. At a pressure of 1 bar a clear _xx minimum and Hall plateau were observed associated with a fractional state while no such structure was observed for the fractional state. At increasing pressure however structure in the resistivity components _xx and _xy for the state became increasingly pronounced. As the disorder in the sample and the measured activation energy for the state remained relatively unchanged with increasing pressure we speculate that the enhancement of the state with increasing pressure is due to an increase in the energy gap for this state.