Auger recombination of electron-hole drops

Phonon-assisted Auger recombination is calculated for indirect band gap semiconductors in the strongly degenerate case. It follows a reciprocal lifetime τ^?1=Cn² with C=7.19×10³¹ cm⁶ sec^?1 for Si and C=2.94× 10^?31 cm⁶ sec^?1 for Ge. These results are in good agreement with experimental values of the decay of electron-hole drops. Therefore one can conclude that phonon-assisted Auger recombination is the essential nonradiative recombination process in this case.     

Ionization equilibrium and radiative energy loss rates for C,N, and O ions in low-density plasmas

The results of calculations of the ionization equilibrium and radiative energy loss rates for C, N and O ions in low-density plasmas are presented for electron temperatures in the range 10⁴–10⁷ °K (～1–10³ eV). The ionization structure is determined using the steady-state corona model, in which electron impact ionization from the ground states is balanced by direct radiative and dielectronic recombination. Using an improved theory, detailed calculations are carried out for the dielectronic recombination rates in which account is taken of all radiative and autoionization processes involving a single-electron electricdipole transition of the recombining ion. The radiative energy loss processes considered are electron-impact excitation of resonance line emission, direct radiative recombination, dielectronic recombination, and electron-ion bremsstrahlung. For all three elements, resonance line emission resulting from 2s?2p transitions produces a broad maximum in the energy loss rate near 10⁵°K(～ 10 eV).     

Pulsed dephotolysis in emulsion nanocrystals of silver halides: I. Recombination processes at early stages of photolysis

Early stages of formation of few-atom clusters of photolytic silver in AgBr nanocrystals are studied using the pulsed dephotolysis technique. It is shown that dephotolysis is characterized by a clearly pronounced dependence on the pulse duration of nonactinic and actinic radiations, the highest efficiency of dephotolysis being achieved for nanosecond pulses. The rate constant of recombination of free electrons with captured holes is determined (κ_p = (6 ± 1) × 10^?9 cm³ s^?1) and the dependence of the recombination rate on the level of excitation is found. The maximum recombination rate for the highest excitation level is found to be V _p ^max = 10⁹ s^?1 and the surface concentration of recombination centers is determined to be N _r = (2 ± 0.5) × 10¹¹ cm^?2.     

Probing into the effect of Auger recombination mechanism on zero bias resistance-area product in In1−xGaxAs detector

D* (Detectivity), an important figure of merit for photodetectors, is limited by zero bias resistance-area product (R₀A). R₀A is determined by Auger recombination mechanism, depending on the composition, temperature, carrier concentration and other parameters of the photodetectors. To investigate R₀A of In_1−xGa_xAs infrared photodetectors, in this paper, theoretical analysis of Auger recombination mechanism was carried out in the room temperature, by taking CCCH, CHHL and CHHS into account. The calculated results show that there are significant influences on R₀A for various parameters in both p- and n-type regions of the devices. With carrier concentration around 10¹⁷ to 10¹⁸ cm⁻³, R₀A of 10⁸ Ω cm² (n-region) and 10⁶ Ω cm² (p-region) are obtained for x=0.47, when thickness and surface recombination velocity of the sample are 5 μm and 100 m/s, respectively.     

Capture cross-section and density of deep gap states in a−SiHx schottky barrier structures

Recombination of charge carriers in a?SiH_x Schottky barriers with density of states near mid-gap ranging from 2.8×10¹⁵?7×10¹⁶cm^-1eV^-1 is attributed to recombination centers with hole capture cross-section of 1.3×10^-15cm².     

The influence of screening effects on the Auger recombination in semiconductors

In contrast to the usual screening of the Coulomb potential by the dielectric constant ? an improved treatment of screening effects is given which is based on many-electron theory. As a consequence of it the Auger recombination probability is remarkably enhanced, indeed by a factor (?² + 1)/2 which is of the order 10². Discrepancies between theoretical and experimental recombination rates in Si and Ge can be resolved in this way.     

Microwave diagnostics of a deuterium afterglow plasma

The electron number density, N_e, was measured by interferrometry with a signal of 9.531 GHz. The time decay of N_e indicated that electron-ion recombination was important with a recombination coefficient α_r = 1.1 X 10^-6cm³sec^-1.     

On the recombination mechanism of quarks into a baryon in proton fragmentation

The similarity and difference between our quark cascade model with recombination mechanism and Van Hove's quark fragmentation-recombination model are discussed. Van Hove's fragmentation-recombination model is extended to the model which describesx-dependence of the hadron spectra as well as the baryon multiplicities by using our diffusion equation. The recombination probability in Van Hove's model can be related with the recombination factor λ′ in our diffusion equation. Thex-dependence of the hadron spectra causes another restriction on the recombination probability in Van Hove's model. The inclusive spectra of mesons, proton andΔ ⁺⁺ in proton fragmentation and baryon multiplicities except∑ ^? multiplicity are explained by both our model with recombination mechanism and the model with recombination mechanism a la Van Hove. But the ration(∑ ^?)/n(∑ ^+;) may not be explained by naive quark-parton model with recombination mechanism without considering quark spin.     

Systematic trends in the radiative emission rates for low- and medium-Z elements in high-temperature plasmas

The power radiated by an optically thin, low-density (N_e ≤ 10¹⁴ electrons/cm³) plasma has been calculated for the electron temperature range 1–10⁶ eV taking into account resonance line emission, direct recombination radiation, dielectronic recombination radiation, and bremsstrahlung from the ions of a given element. The ionization structure has been determined by using a corona equilibrium model in which collisional ionization and inner-shelled excitation followed by autoionization are balanced by direct radiative and dielectronic recombination. Based on the results for respresentative elements from carbon through nickel, graphs are presented of the maximum radiated power, the maximum emission temperature, and the mean charge at the maximum for each shell as functions of the atomic number Z. Assuming that the maximum emission temperature can be achieved, aluminum and iron are predicted to be the most efficient K-shell radiators for Z ≤28.     

Theoretical partial dielectronic recombination rate coefficients for ground-state helium-like argon

Theoretical dielectronic recombination rate coefficients are calculated for ground-state helium-like argon. Partial dielectronic recombination rate coefficients are obtained by summing over the individual lines within the five transition arrays. 1s2lnl′ → 1s²nl′ for n = 2, 3 and 4 and 1s2lnl′ → 1s²2l for n = 3 and 4. The partial rate coefficients are presented for electron temperatures corresponding to values of kT_e ranging from 0.4 to 10 keV.     

Temperature dependence of the radiation-stimulated conductivity of CsI crystals upon picosecond excitation by electron beams

The temperature dependence of the pulse conductivity for CsI crystals upon excitation with an electron beam (0.2 MeV, 50 ps, 400 A/cm²) at a time resolution of 150 ps is investigated. Under experimental conditions, the time of bimolecular recombination of electrons and holes (V _k centers) is directly measured in the temperature range 100–300 K. This made it possible to calculate the temperature dependence of the effective recombination cross section S(T)=7.9×10^?8 T² cm². The temperature dependence of the conductivity σ(T) is interpreted within the model of the separation of genetically bound electron-hole pairs. The activation energy of this process is found to be E _G =0.07 eV.     

The electron energy loss spectrum of EuO(100)

Energy losses of 200 eV to 2 keV electrons reflected from a disordered EuO(100) crystal show a bulk plasmon loss consistent with just less than six “quasi free” electrons per EuO unit, and 5p → nd resonance losses above the 5p threshold. The ratio of intensity of the 4d¹⁰ 4fⁿ⁰ → 4d⁹ 4fⁿ⁺¹ “giant resonance” loss at 142 eV to the corresponding direct recombination feature varies with energy, while the direct recombination and related Auger channels show similar energy dependence.     

A monte-carlo/molecular dynamics study of the diffusional recombination kinetics of C(a) + O(a) → CO(g) on Pt(111)

The diffusion constants for C and O adsorbates on Pt(111) surfaces have been calculated with Monte-Carlo/Molecular Dynamics techniques. The diffusion constants are determined to be D_C(T)=(3.4 × 10^?3e^{$\text{?13156}\text{T}$})cm²s^?1 for carbon and D_O(T) = (1.5×10^?3 e^{$\text{?9089}\text{T}$}) cm² s^?1 for oxygen. Using a recently developed diffusion model for surface recombination kinetics an approximate upper bound to the recombination rate constant of C and O on Pt(111) to produce CO_(g) is found to be (9.4×10^?3 e^{$\text{?9089}\text{T}$}) cm² s^?1.     

Optically-pumped stimulated recombination radiation inp-type InSb in high magnetic fields

In this paper measurements of the frequency, linewidth and polarization of stimulated recombination radiation (SRR) fromp-type InSb are reported. The samples had low excess-carrier concentrations between 10¹⁴ and 10¹⁵ per cm³ and different lengths between 0.4 and 9 mm. They were held in magnetic fields up to 6T at temperatures of pumped liquid helium. The excitation was done optically by the radiation of a Q-switched CO-laser. We could observe a number of different stimulated processes:

1. band-to-band recombination (tuning between 1875 and 1980 cm^?1),
2. band-to-acceptor recombination (tuning between 1840 and 1930 cm^?1),
3. stimulated spin-flip Raman scattering (SFR) of the SRR by excited electrons,
4. SFR of the laser by excited electrons and its interaction with the SRR.

From the observed shift of the band gap by exchange and correlation energy the number of created electron-hole pairs can be calculated to be up to 10¹⁶ per cm³. The observed acceptor binding energy varies from 66 cm^?1 atB=0 to 71 cm^?1 at 4.5T.     

Investigation of excitation processes in a hollow-cathode discharge by time-resolved measurements in the vacuum u.v.

A spectrometer for the far u.v. range (λ = 30–300 nm) has been used, together with a sampling instrument (resolution 10^-9 s, time-intervals 10^?9to 10^?3s) for the measurement of afterglow. The measurements were confined to emission of the hollow cathode discharge. From the time constants of the afterglow, we conclude that the essential excitation processes for atoms in the hollow cathode are the following: direct electron excitation and three-body recombination.     

A case for large Auger recombination cross sections associated with deep centers in semiconductors

It is argued that the recent quantitative results concerning localized defects in semiconductors (e.g. GaAs) are consistent with the possibility of large Auger-type cross sections associated with recombination at these centers.It is proposed that many of the capture cross sections reported to be in the range 10^?13–10^?16cm², which exhibit only weak temperature dependence, and which do not depend on carrier concentration, might be explained by this mechanism.     

The spectrum and decay of the recombination radiation from strongly excited silicon

The spectral distribution of the recombination radiation from silicon during and after excitation by a Q-switched ruby laser has been measured and analyzed. The interpretation assumes a third-order (Auger) recombination process and a simple parabolic band structure. It takes into account the heating of the sample at the surface and the reduction of the band gap due to the high carrier density. Measurements of the spectral distribution as a function of time gives a value of the Auger transition rate factor γ₃ = 2·10⁻³¹ cm⁶sec⁻¹.     

Population of 2p 55s levels of neon in He-Ne plasma: I. The evolution of mechanisms in the discharge and the afterglow

The spectroscopic study of population processes of neon 2p ⁵5s states was carried out in helium afterglow with small admixture of neon at PHe = 38.1 torr, [He]/[Ne]=10^?5 with pulsed discharge afterglow in helium with small admixture of neon (pressure equal to 38.1 mm Hg; ). It is established that the main mechanism of population of 3s ₂ level (in Paschen’s notation) in the discharge and the initial after-glow is the excitation transfer from metastable atoms of He(2¹ S ₀). The other three levels—3s ₃, 3s ₄, and 3s ₅—corresponding to 2p ⁵5s configuration are populated in the afterglow as a result of the dissociative recombination HeNe⁺ of ions with electrons. The same process is also the main channel of population of 3s ₂ level in the late afterglow phase, when the concentration of He(2¹ S ₀) atoms is small. The hypothesis of recombination mechanism is confirmed by observation of the response of line intensities to pulsed electron heating. The partial coefficients of dissociative recombination into 2p ⁵5s states are estimated.     

Radiation-stimulated pulse conductivity of CsBr crystals

The radiation-stimulated pulse conductivity of CsBr crystals is investigated upon picosecond excitation with electron beams (0.2 MeV, 50 ps, 0.1–10 kA/cm²). The time resolution of the measuring technique is ～150 ps. It is shown that the lifetime of conduction band electrons is limited by their bimolecular recombination with autolocalized holes (V _k centers). A delay in the conduction current pulse build-up is revealed. This effect is explained within the proposed model, according to which the Auger recombination of valence band electrons and holes of the upper core band substantially contributes to the generation of conduction band electrons.     

Thermal equilibrium criteria in a nitrogen plasma

A method for obtaining the lower electron density limit for LTE in a nitrogen plasma is described, whereby the experimentally determined ratio of the collisional-radiative ionization and recombination coefficients (S/α) is compared with the corresponding LTE value (Saha ratio). It is argued that if the electron density is increased from values of about 10¹⁶cm^-3, S/α should tend to the Saha ratio as LTE is approached. For NII and NIII spectral lines, this is found to happen at an electron density of a few times 10¹⁶cm^-3 when the electron temperature is about 3 eV, in good agreement with the LTE criterion of Griem.