The superconducting transition temperature of bulk samples of the niobium-germanium A15-phase after implantation of Ge,Si, O and Ar ions

Bulk material of Nb₃ (Ge_0.8Nb_0.2) with A15 structure and a superconducting transition temperature T_c of 6.5 K has been implanted with Ge, Si, Ar and O ions and subsequently annealed at high temperatures. After annealing between 700 and 750°C the Ge implanted samples showed a strong increase in T_c up to 16.2 K. With Si ions only a T_c of 13 K was obtained, with Ar and O ions T_c remained below 9 K. From X-ray measurements carried out on high T_c Ge implanted samples it could be concluded that the implanted surface layer grows up to a high degree epitaxially on the single crystallites of the bulk material. The lattice constant $\text{a}$₀ of the implanted film was reduced by 0.02 Å with respect to the bulk material. This reduction in $\text{a}$₀ is stronger than expected from the transition temperature of the implanted surface layer.     

Specific heat of A-15 Nb3Al0.83Ge0.21

The specific heat of A-15 Nb₃Al_.83Ge_.21 with a transition temperature, T_c, of 20.0 K has been measured from 6 to 25 K. Values of the parameters derived from the data are γ=35.0±2 mJ/mole-K²; the Debye temperature, θ_D=278±5 K; the energy gap, △, normalized as 2△/kT_c, is 4.9±.3, and the thermodynamic critical field, H_c(0), is 4700±300 Gauss.     

Extended x-ray absorption fine structure investigations of Nb3Ge0.26Al0.74

We have performed Extended X-ray Absorption Fine Structure (EXAFS) studies of the high-T_c ternary superconducting alloy Nb₃Ge_0.26Al_0.74 above the Ge K-edge. The EXAFS indicates that the local environment surrounding the Ge atoms is characterized by a high degree of structural order, similar to that found in previous investigations of high-T_c Nb₃Ge thin films. We also present direct “microscopic” structural evidence that this material is a solid solution of Nb₃Ge and Nb₃Al. No evidence of Nb₃Ge microcrystals is observed.     

Properties of disordered Mo3Ge thin films with A15 structure

Heavy ion irradiation of A15 Mo₃Ge with the low transition temperature T_c = 1.45 K raises T_c to ? 6 K. For the first time in A15 compounds a T_c degradation (≈ 3 K) after having passed through a maximum is observed until near 3.5 K the saturation value is reached. The effects on T_c are interpreted by variations of the deduced (H'_c2, ?) density of states at the Fermi level. This picture consistently explains the T_c degradation of the high-T_c A15 compounds.     

Anomalous magnetism and 209Bi nuclear spin relaxation in Bi4Ge3O12 crystals

The quadrupole ²⁰⁹Bi spin–spin and spin–lattice relaxation were studied within 4.2–300 K for pure and doped Bi₄Ge₃O₁₂ single crystals which exhibit, as was previously found, anomalous magnetic properties. The results revealed an unexpectedly strong influence of minor amounts of paramagnetic dopants (0.015–0.5 mol.%) on the relaxation processes. Various mechanisms (quadrupole, crystal electric field, electron spin fluctuations) govern the spin–lattice relaxation time T ₁ in pure and doped samples. Unlike T ₁, the spin–spin relaxation time T ₂ for pure and Nd-doped samples was weakly dependent on temperature within 4.2–300 K. Doping Bi₄Ge₃O₁₂ with paramagnetic atoms strongly elongated T ₂. The elongation, although not so strong, was also observed for pure and doped crystals under the influence of weak (～30 Oe) external magnetic fields. To confirm the conclusion about strong influence of crystal field effects on the temperature dependence of T ₁ in the temperature range 4.2–77 K, the magnetization vs. temperature and magnetic field was measured for Nd- and Gd-doped Bi₄Ge₃O₁₂ crystals using a SQUID magnetometer. The temperature behavior of magnetic susceptibility for the Nd-doped crystal was consistent with the presence of the crystal electric field effects. For the Gd-doped crystal, the Brillouin formula perfectly fitted the curve of magnetization vs. magnetic field, which pointed to the absence of the crystal electric field contribution into the spin–lattice relaxation process in this sample.     

Anomalous behavior of superconducting transition temperature of amorphous and crystalline Nb3Ge under pressure

The superconducting transition temperature (T_c) of amorphous Nb₃Ge was studied under both hydrostatic and quasihydrostatic pressure to 3.5 and 13 GPa, respectively. Whereas hydrostatic pressure causes T_c to initially decrease, T_c is found to increase under higher quasihydrostatic pressures. T_c(p) was also studied on an A-15 crystalline Nb₃Ge sample obtained from the amorphous sample by annealing.     

Polarization properties of Li2−x Na x Ge4O9 (0.2 ≤ x ≤ 0.3) crystals

The polarization switching in sinusoidal fields and the pyroelectric properties of Li_2?x Na _x Ge₄O₉ (0.2 ≤ x ≤ 0.3) crystals are measured in the temperature range T _c ?T ≤ 40 K. The behavior of the P?E hysteresis loops with variations in temperature is investigated for crystals with phase transition temperatures T _c < 300 K and T _c > 300 K. It is shown that, for crystals with phase transition temperatures T _c < 300 K, the temperature dependence of the hysteresis loop exhibits a behavior typical of crystals with second-order phase transitions. The crystals with phase transition temperatures T _c > 300 K are characterized by double hysteresis loops in the temperature range T _c ?T ₁ ≈ 30 K. The correlation between the polarization properties and possible structural transformations of the Li_2?x Na _x Ge₄O₉ crystals due to the change in the concentration ratio of Na and Li ions is discussed.     

Superconductivity of neutron irradiated Mo3Os

The effect of high energy neutron irradiation (E>1 MeV) on the superconducting transition temperature, T_c, of the A-15 compound Mo₃Os is reported. T_c was found to decrease with increasing neutron dose, but at a rate considerably less than observed in other A-15 compounds composed of non-transition metals. The results lend support to the idea that the effect of ordering on T_c is smaller for A-15 compounds composed only of transition metals than those composed of transition and non-transition metals.     

The temperature dependence of the ALO-modes in Pb5Ge3O11

The temperature dependence of the LO-TO splitting of the A-modes of Pb₅Ge₃O₁₁ between room temperature and T_c=450K was determined from the Raman spectrum. The finite splitting of two A-modes above T_c leads to the conclusion that the space group of Pb₅Ge₃O₁₁ in the paraelastic phase deviates from P6 which was determined by X-ray and other physical methods.     

A non-magnetic Fe probe of multiple magnetic phase transitions in RMn2Si2−x Ge x,R=rare earth

Summary Dilute⁵⁷Fe M?ssbauer-spectroscopy studies of RMn₂X₂ (X=Si and/or Ge, R=La, Ce, Pr, Nd, Sm, Eu and Gd) at 4.2 to 650 K yield the following results: Fe in RMn₂X₂ does not carry a magnetic moment. It reveals the magnetic order in the Mn and R sublattices through transferred hyperfine fields (∼100 kOe). The compounds LaMn₂Si₂, LaMn₂Ge₂, CeMn₂Ge₂, PrMn₂Ge₂, NdMn₂Ge₂ and SmMn₂Ge₂, known to be ferromagnets withT _c=300–350 K, are antiferromagnetically ordered above their correspondingT _c. TherT _N values extend from 385 K (SmMn₂Ge₂) to 470 K (LaMn₂Si₂). At the ferromagnetic-antiferromagnetic phase transition, a sharp reorientation of the Mn magnetic moments relative to the crystalline axes occurs. In RMn₂Si_2−x Ge _x with intermediatex values, the Ge is much more dominant in determining the magnetic properties of the Mn sublattice. While PrMn₂Si₂ is an antiferromagnet (T _N=365 K) and PrMn₂Ge₂ is a ferromagnetantiferromagnet (T _c=328 K,T _N=415 K), we find that in PrMn₂SiGe, the magnetic behaviour is similar to that in pure PrMn₂Ge₂,T _c=305 K andT _N=395 K. Paper presented at ICAME-95, Rimini, 10–16 September 1995.     

Superconductivity,lattice transformations,and electronic instabilities in CuxMo3S4

The variations of the superconducting transition temperature (T_c) and of the lattice transformation temperature (T_L) with composition are reported for the Chevrel-phase system Cu_xMo₃S₄ (1 ≤ × ≤ 2). A complex low temperature phase diagram was found, containing at least three distinct low temperature phases, each exhibiting its own characteristic T_c (11 K, 6.5 K, 4.5 K), T_L (280 K - 125 K), and electronic transport behavior. Pressure-induced transformations between these three phases were observed at pressures below 25 kbar. Temperature-induced lattice distortion for compositions near Cu₂Mo₃S₄ was found to increase the T_c above that (< 1.1 K) of the high temperature, higher symmetry rhombohedral phase. This is apparently the first time the latter behavior has been observed: in all previous studies of other materials, the opposite behavior was reported.     

Superconductivity with onset above 23° K in NbGe sputtered films

Sputtered films of nominal composition Nb₃Ge deposited onto hot substrates, of the type recently found by Gavaler to have superconductivity onsets at 22.3° K, have now been obtained with a maximum onset temperature of 23.2 ± 0.2° K and a transition width of ～ 1.2° K. The sputtering conditions necessary to achieve these results are discussed and suggest that the high T_c phase may be detrimentally affected by the presence of high energy particles present under normal sputtering conditions.     

Superconductivity and electrical resistivity of amorphous Nb75Ge25 and Nb80Si20 after heavy ion irradiation at low temperature

Low temperature irradiation of thin films of Nb₇₅Ge₂₅ (T_c = 3.2 K) and Nb₈₀Si₂₀ (T_c = 4.7 K) with 20 MeV sulfur ions leads to an increase of T_c of about 0.5 K and a decrease of ? of about 1.5 to 3.5%. Annealing up to room temperature partly restores the initial values. Qualitatively the results can be explained by irradiation induced smearing of the structure factor, which is partially recovered by annealing.     

Magnetism and the magnetocaloric effect in PrMn1.6Fe0.4Ge2

The magnetic and magnetocaloric properties of PrMn_1.6Fe_0.4Ge₂around the ferromagnetic transitions T _C ^inter ~ 230 K and T _C ^Pr ~ 30 K have been investigated by magnetisation, ⁵⁷Fe Mössbauer spectroscopy and electron paramagnetic resonance (EPR) measurements over the temperature range 5–300 K. The broad peaks in magnetic entropy around T_C ^inter (intralayer antiferromagnetism of the Mn sublattice to canted ferromagnetism) and T_C ^Pr (onset of ferromagnetic order of Pr sublattice in addition to ferromagnetically ordered Mn sublattice) are typical of second order transitions with maximum entropy values of -ΔS _M ~ 2.0 J/kg K and -ΔS _M ~ 2.2 J/kg K respectively for ΔB = 0–6 T. The EPR signal around T = 48 K of g value g ~ 0.8 is consistent with paramagnetic free ion Pr^3?+?. Below T_C ^Pr ~ 30 K the g value increases steadily to g ~ 2.5 at 8 K as saturation of the Pr^3?+? ion is approached. The EPR measurements indicate additional effects in this system below T ~ 20 K with the appearance of EPR signals of low g value g ~ 0.6.     

Possible mechanism of superconductivity in the CuO-Cu interface

Apparently, a two-dimensional CuO lattice is formed on the surface of copper oxide in the CuO-Cu interface. This lattice consists of Cu²⁺ and O^1? ions, which form a narrow, partially filled two-dimensional band. In this case, local electron pairs (LEPs) can form in the oxygen subsystem as a result of the fulfillment of the Shubin-Vonsovskii conditions. A crude estimate of the formation temperature of LEPs gives T* ～ 10 4 K. At the concentration in the interface layer n～1.6×10²⁰ cm^?3 and the effective mass of carriers m* ～ m _e, the onset temperature of Bose-Einstein condensation may take a value of T _c ～ 1000 K. The estimate obtained for the temperature T _c corresponds to the experimental value by an order of magnitude.     

Superconductivity and crystal structure of ternary CuxMo3S4 compounds with 0 ≤ x ≤ 1 prepared by anodic oxidation of Cu1.0Mo3S4

Superconductivity and crystal structure data are reported for a series of ternary Cu_xMo₃S₄ samples with 0 ≤ x ≤ 1 which were prepared by anodic oxidation of Cu_1.0Mo₃S₄. A phase with the composition Cu_0.5Mo₃S₄ was found to have rhombohedral lattice parameters $\text{a}{}_{\mathrm{R}}\text{= 6.447(5)}\text{A}\text{?}$ and α_R = 93.74(4) ° and a superconducting critical temperature T_c = 5.8 K. The dependence of T_c on pressure for Cu_0.5Mo₃S₄ has been measured between 0 and 19 kbar.     

Electrical characterization studies of p-type Ge,Ge1−ySny,and Si0.09Ge0.882Sn0.028 grown on n-Si substrates

The electrical properties of p-type Ge, Ge_1−ySn_y, and Si_0.09Ge_0.882Sn_0.028 samples grown on n-type Si substrates using ultra-high vacuum chemical vapor deposition have been investigated as a function of temperature. Degenerate parallel conducting layers were found in all Ge/Si, Ge_1−ySn_y/Si, and Si_0.09Ge_0.882Sn_0.028/Si samples, which are believed to be associated with dislocation defects at the interface produced by the lattice mismatch between the two materials. These degenerate conducting layers affect the electrical properties of all the thin epitaxial films. Additionally, temperature dependent Hall-effect measurements show that these materials exhibit a conductivity type change from p to n at around 370–435 K. The mobilities of these samples are generally lower than that of bulk Ge due to carrier scattering near the interface between the epitaxial layer and the Si substrate and also due to alloy scattering. Detailed behavior of temperature-dependent conductivity of these samples is also discussed.     

Local and itinerant Magnetism AND Crystal structure of RRh2Ge2 and RRu2Ge2 (r = rare earth)

The compounds RRh₂Ge₂; and RRu₂Ge₂ were synthesized X-ray studies show that they have the expected ThCr₂Si₂; tetragonal-type structure Magnetization studies at 1 8–300 K, ¹⁵¹Eu Mossbauer studies at 4 l, 77 and 300 K and the crystallography studies show the following- All RRh₂Ge₂; like RRh₂Si₂; exhibit two magnetic phase transitions, one corresponding to the antiferromagnetic ordering of the local rare earth moments. T_N = 8–90 K, the other corresponding to the itinerant electron ordering of the Rh sublattice. T_M = 3–9 K The heavy rare earths in RRu₂G₂; order antiferromagnetically and undergo a spin-flop transition in a relatively low magnetic field, <10 kOe The light elements in RRu₂Ge₂; order in a ferromagnetic, somewhat unclear structure NdRu₂Ge₂, like NdRu₂Si₂, exhibits two peaks in the magnetization curves Again, the lower may correspond to itinerant electron ordenng or, alternatively, to spin reorientation of the rare earth sublattice Eu in both EuRh₂Ge₂ and EuRu₂Ge₂ is divalent, whereas Ce in both CeRh₂Ge₂ and CeRu₂Ge₂ is trivalent For all rare earths the ordenng transition in RRh₂Ge₂ is higher than in RRu₂Ge₂. This fact can be associated with the smaller R-R distances in RRh₂Ge₂ and/ or due to the stronger magnetic character of the Rh 4d conduction electrons Companson of the magnetic properties and ¹⁵¹Eu hyperfine interactions of Eu²⁺Rh₂Ge₂, Eu²⁺Ru₂Ge₂, Eu²⁺Rh₂Si₂ and Eu³⁺Ru₂Si₂ with all the other systems leads to the conclusion that the conduction electrons play the dominant role in determining the magnetic properties of these systems Crystal-field effects are also of considerable importance, since the Mossbauer studies yield for the second-order crystal-field parameter A⁰₂〈r²_4f〉 the huge values +385 and +282 K for EuRu₂Ge₂; and EuRh₂Ge₂, respectively The easy axis of magnetization in the Eu compounds is in the basal plane The large second-order crystal field predicts well the direction of the easy axis for all other rare earths No superconductivity has been observed in any of the compounds, down to 1 8 K A companson of the magnetic properties of the germanides with those of the silicides shows great similanties, the differences being accounted for by the different unit cell sizes and c/a ratios.     

Evolution of the optical properties and the electrical resistivity of CaMnO3 during the substitution of Mo for Mn ions

The reflectance, the optical density, and the optical conductivity spectra of CaMn_{1 ? x} Mo _x O₃ (x ≤ 0.07) polycrystals are studied over a wide spectral region. The substitution of Mo⁶⁺ ions for Mn⁴⁺ ions leads to a strong decrease in the first high-energy phonon band, which is related to vibrations in the MnO₆ octahedron. The appearance of band-type charge carriers is detected in CaMn_{1 ? x} Mo _x O₃ with x ≤ 0.04, and carrier localization is observed in CaMn_0.93Mo_0.07O₃. This localization increases at T < 160 K, i.e., during the transition from the paramagnetic to the antiferromagnetic state with orbital ordering and a monoclinic structure. The optical conductivity spectrum of CaMn_0.93Mo_0.07O₃ exhibits a strong shift of fundamental absorption bands, which is associated with a change in the band structure because of a decrease in the splitting of the 3d levels of Mn in the crystal field.     

Electron spin-lattice relaxation in noncommon metals YBa2Cu3Ox and Rb1C60

Using an original modulation technique, the electron spin-lattice relaxation have been investigated in two noncommon metals: YBa₂Cu₃O_x, high-T_c material doped with 1% Gd, and Rb₁C₆₀, linear polymer phase fulleride. In the first case, the Korringa-like temperature dependence of the Gd³⁺ longitudinal relaxation time T₁, is found forx = 6.59 in a wide temperature range 4.2 <T < 200 K, both above and below T_c = 56 K. Atx = 6.95 (T_c = 90 K), the T₁ behavior within 50 <T < 200 K is evidently affected by spin gap opening with the gap value of about 240 K. At 200 K, an unexpected acceleration of the relaxation rate takes place, suggesting some change in the relaxation mechanism. The data are discussed in terms of the Barnes-Plefke theory with allowance made for microscopic separation of the normal and superconducting phases. In Rb₁C₆₀, the evolution of the ESR line and relaxation rates have been studied accurately in the range of the metal-insulator transition (below 50 K). Interpretation is suggested which takes into account breaking down the relaxation bottleneck due to opening of the energy gap near the Fermi surface. The gap value of about 100 cm^?1 is estimated from the analysis of relaxation rates, lineshape and spin susceptibilities.