Evidence for correlation effects: −√T behaviour in the low temperature electrical resistance of disordered metals

It is found that the electrical resistance for several metal-metalloid amorphous alloys decreases with increasing temperature as ?√T from about 20 mK to several K. The form and magnitude of this temperature dependence is in agreement with recent predictions from interaction theories.     

Electron-electron interactions and the electrical resistivity of lithium at low temperatures

The electron-electron interactions in lithium metal have been examined keeping in view the recent developments. The contribution of the electron-electron Umklapp scattering processes in the electrical resistivity of lithium at low temperatures has been evaluated using a simplified spherical Fermi surface model with isotropic transition probability. Our values of the electrical resistivity so obtained compare fairly well with the experimental results for lithium.      

Temperature dependence of the electrical resistivity in amorphous metals

In amorphous metals the electrical resistivity increases linearly in the temperature range from 2 to 40 K. This result differs fundamentally from the nonlinear behaviour known for crystalline metals and it suggests the conduction electrons not to be scattered by the vibrations of the amorphous point lattice. The temperature dependent part of the resistivity in amorphous metals is explained with scattering of conduction electrons by fluctuations ofp-electrons.     

T dependence of the high temperature electrical resistivity of metals

Available data is used to show that the high temperature resistivity of a number of metals varies with temperature as T^3/2 in a manner consistent with recent observations of a similar temperature variation for Debye-Waller factors.     

Electron interactions and the electrical resistivity of alkali metals at low temperatures

The contribution of the electron-electron umklapp scattering processes to the electrical resistivity of sodium, potassium, rubidium and cesium at low temperatures has been evaluated using a simplified spherical Fermi-surface model with an isotropic transition probability. Our values of the electrical resistivity so obtained compare fairly well with the recent experimental values for sodium, potassium and rubidium. Our theoretical results have also been compared with the other available data in the literature due to Lawrence and Wilkins and MacDonald and Geldart.     

Flicker noise of hot electrons in silicon at T = 78 K

From flicker-noise and current-voltage measurements performed on an n⁺nn⁺ silicon planar device at T = 78 K we calculated Hooge's parameter α as a function of the electric field strength, E₀. We found that α(E₀) = α(0)/[1 + (E₀/E_c)²]. E_c is a critical field where the drift velocity equals the sound velocity, indicating the connection of the observed effect with acoustical phonon scattering.     

Longitudinal static spin susceptibility of the Heisenberg ferromagnet at T < Tc

An interpolation formula for the longitudinal static susceptibility of the Heisenberg ferromagnet is derived. The result is shown to have correct temperature and magnetic field dependencies at low temperatures as well as in the vicinity of the Curie point.     

Effect of spin-fluctuations on the temperature dependence of electrical resistivity in transition alloys

Two recent theories of spin-fluctuations in metals are generalized to concentrated transition binary alloys. It is shown that in these alloys the effect of spin-fluctuations can give to a negative T-coefficient of resistance d?/dT.     

Temperature dependence of the electrical resistivity and deviations from matthiessen's rule of Pd-Er alloys

Measurements are presented of the electrical resistivity for a series of Pd_1−cEr_c (c = 0, 0.5, 1.0, 1.93, 3.97, 5.20, and 6.63 at.%) alloys in the temperature range from 4 to 1200 K. No Kondo-like anomaly is found in each resistivity curve down to the lowest temperature. The experimental data were interpreted by electron-phonon scattering and electron-electron scattering mechanisms. Finally, the deviations from Matthiessen's rule of this alloy system are discussed in general.     

Influence of anisotropic fluctuations on the electrical resistivity in uniaxial ferromagnetic metals near Tc

The generalized Ornstein-Zernike correlation function appropriate to a uniaxial ferromagnet is applied to study the influence of anisotropic fluctuations on the electrical resistivity in uniaxial ferromagnetic metals near T_c. It is shown that both the anisotropic fluctuations and the Fermi surface anisotropy contribute on the same footing to an anisotropy of the spin-fluctuation resistivity. The results are consistent with those obtained for the isotropic system in the same approximation and may be useful for interpreting recent spin-fluctuation resistivity data obtained experimentally for uniaxial systems.     

On the anomalous temperature dependence of the electrical resistivity in liquid alloys

It is demonstrated that the anomalous temperature dependence of the electrical resistivity, as experimentally reported for liquid binary alloys of simple metals, arises primarily from the significant decrease in the partial localization of the valence electrons on the electronegative component.     

Note on measurements of the electrical resistivity of CrMn alloys

Various experimental results on CrMn alloys are reviewed in order to discuss recent precise measurements of the electrical resistivity in the vicinity of the spin ordering transition temperature T_N. Different critical exponents λ have been observed for the electrical resistivity temperature derivate in alloys of similar composition. Apparent discepancies arte interpreted following recent theoretical work.     

Doppler-broadening measurements of microvoids at the Au/GaAs interface

Recent positron lifetime studies made on the Au/GaAs interface with an applied electric field returning a significant fraction of bulk implanted positrons to the interface have revealed the presence of microvoids( 1 nm diameter) at the interface. In this work an attempt has been made to study these microvoids by observing the Doppler broadening on the annihilation radiation coming from them. This is done both by observing theS-parameter as a function of applied bias and by applying the generalized least-squares method to the deconvolution of the annihilation radiation lineshape. The general conclusion is that the Doppler-broadened data are consistent with the majority of positrons trapping into microvoids, probably associated with grain boundaries. The data suggest that these open volume defects are more associated with the Au film rather than the Au-Ga alloyed interfacial region.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

The dependence of the photodisintegration cross section on the off-shell T-matrix

Nucleon-nucleon scattering phase shifts determine the diagonal element of the transition matrix. The off-diagonal elements are not completely arbitrary but have conditions imposed on them by the range and the tail of the potential. Electromagnetic interaction can also be used to place restrictions on the off-diagonal elements. We find that the cross section of the deuteron photodisintegration is sensitive to the off-shell transition matrix. The integrated cross section can be varied by as much as 30 % or more, and the matrix element for the El transition by a factor of 2. While the matrix element for the photodisintegration depends on the off-shell elements of the T-matrix, it cannot be used to discriminate between alternative off-shell T-matrices. We have constructed classes of different off-shell T-matrices, which produce identical photo-disintegration cross sections and other two-body scattering and bound-state properties.     

An analysis of the temperature and pressure dependence of the electrical resistivity in lead

The volume dependence of the high temperature electrical resistivity has been treated in detail for lead. Volume changes caused by external pressure as well as thermal expansion have been considered. Experiments on the volume dependence of the effective electron mass have been reanalysed with an inclusion of electron-phonon interaction. Finally, we have found no experimental support for a net effect from a Debye-Waller factor and multi-phonon processes.     

Observation of the strongly anomalous temperature and composition dependence of (δp/δT)s in liquid Li/Pb alloys

(δp/δT)_s which is proportional to the specific heat has been measured between the liquidus temperature and 1250 K for the whole concentration range of liquid Li/Pb alloys. For all concentrations it shows a positive deviation from the values expected for an ideal solution and it exhibits a narrow peak close to the composition Li₄Pb. The variation of T(δp/δT)_s with T is linear only for pure Pb. At 0.2 < x_Li < 0.6 a fall-off after melting is followed by a broad maximum at about 1000 K.     

Observation of the T=4 and T=5 components of the giant Gamow-Teller resonance in the (3He,t) reactions at 130 MeV

Broad peaks around 9 and 19 MeV excitation energy have been observed in the ⁹⁰Zr(³He,t)⁹⁰Nb reaction at 130 MeV. These peaks are interpreted as the T=4 and T=5 components, respectively, of a giant Gamow-Teller transition.