Small-angle neutron scattering study of radiation defects in synthetic quartz

The superatomic structure of synthetic quartz single crystals with dislocation densities ρ = 54 and 570 cm^?2 was studied in the initial state and after irradiation with fast neutrons with energies E _n > 0.1 MeV in a WWRM reactor (St. Petersburg Nuclear Physics Institute) in the fluence range F = 0.2 × 10¹⁷?5.0 × 10¹⁸ neutrons/cm². Weak irradiation with F = 0.2 × 10¹⁷ neutrons/cm² causes only slight structural changes, whereas appreciable generation of defects with radii of gyration r _g ～ 1–2 nm and R _G ～ 40–50 nm occurs at F = 7.7 × 10¹⁷?5.0 × 10¹⁸ neutrons/cm². As the fluence increases further, the number and volume fraction of point defects, as well as extended (channels ～2 nm in radius) and globular (amorphous phase nuclei) defects, increase.     

Defects and the structure of a manganite La0.85Sr0.15MnO3 crystal

Defects in a ferromagnetic crystal of manganite La_0.85Sr_0.15MnO₃ were created by irradiation with fast neutrons (E > 0.1 MeV). Fast neutrons produce defect clusters in a crystal lattice. The volume fraction of the clusters in the crystal after irradiation to a dose F = 2 × 10¹⁹ cm^?2 (T _irr = 340 K) was ?40%. The structural and magnetic states of the modified manganite were studied using thermal-neutron diffraction and magnetic measurements. It was revealed that neutron irradiation of a crystal suppresses the cooperative Jahn-Teller effect and the initial charge modes and decreases the temperature of ferromagnetic ordering. Under irradiation with fast neutrons, the crystalline structure of the manganite changes from the orthorhombic O′ to the pseudocubic O* phase. Arguments are advanced in favor of the specific features of the irradiated-manganite structural state being determined by long-wavelength strains induced in the crystal by antisite defects.     

Magnetic structure and transport properties of atomically disordered crystals of two-dimensional manganites La2−2x Sr1+2x Mn2O7

The magnetic structure and transport properties of partially disordered crystals of two-dimensional manganites La_2?2x Sr_1+2x Mn₂O₇ (x = 0.3, 0.4) are studied over a wide range of temperatures. The crystals are transformed into an atomically disordered state under irradiation with fast neutrons at a dose of 2 × 10¹⁹ cm^?2. The average concentration of substitutional defects in the crystal is ≈4%. It is found that substitutional defects are responsible for the transition of these manganites from the ferromagnetic metal state to the insulator state with a spin glass structure. The results obtained are discussed in terms of the ratio between the kinetic energy of charge carriers and the exchange energy of localized spins.     

Influence of neutron irradiation and temperature on the electric conductivity of SiO2 nanoparticles

At different frequency range it has been studied the influence of temperature and amount of falling neutrons on nano SiO₂ irradiated with neutrons. It has been revealed that it is generated additional electroactive radiation defects under the influence of rays omitted from activation products or direct neutron. Thus, the change of neutron flux at 6.7 × 10¹⁷ ∼ 2.7 × 10¹⁸ cm⁻² s⁻¹ range increases the electric conductivity of nano SiO₂ for approximately 30 times. It has been revealed two temperature ranges at temperature dependence of non-irradiated sample and three temperature ranges at a neutron irradiated-sample. It has been put forward the mechanism that explains the obtained results.     

Supra-atomic structure of radiation-induced defects in synthetic quartz from neutron scattering data

The nanostructure of synthetic quartz samples irradiated with fast reactor neutrons with energies E n > 0.1 MeV has been studied by small-angle neutron scattering. The fluences are varied from 10¹⁷ to 2 × 10²⁰ neutrons/cm². In the quartz samples irradiated with fluences higher than 10¹⁷ neutrons/cm², point, extended (dislocation loops), and volume defects, namely, thermal peaks up to 50 nm in radius, are observed over the entire volume. At a fluence of 2 × 10²⁰ neutrons/cm², the total fraction of the formed defect regions, where the material is in a noncrystalline state, exceeds 10% of the sample volume. The data on the formation of a metamikt glassy phase in the quartz sample have been obtained.     

Investigation of amorphous states of SiO2 by Raman scattering spectroscopy

The vitreous SiO₂ samples irradiated with fast neutrons at a dose of 5×10¹⁷?2.2×10²⁰ per cm² are investigated by the Raman scattering technique. It is demonstrated that the maximum of the low-frequency Raman spectrum (boson peak) shifts with an increase in the irradiation dose, and the medium-range order size decreases from 25 Å for the initial glass to 19 Å for the sample subjected to irradiation at a maximum dose. It is revealed that the fast relaxation intensity obtained from analysis of the low-frequency Raman spectra linearly correlates with the specific volume of the studied samples.     

Observation of thermoluminescence induced by fission fragments

Abstract

Thermoluminescence induced in CaF₂ powder by fission fragments emanating from a uranium foil bombarded by fast neutrons has been measured as a function of neutron fluence. A linear relationship between the glow produced and the fast neutron fluence between 5 × 10¹⁰ and 6.5 × 10¹¹ n/cm² has been obtained, thus establishing the feasibility of the use of this method for fast-neutron dosimetry. A limitation of the method is that, if the fissile foil is not separated from the phosphor after irradiation, the TL produced by the α-disintegration of ²³⁸U may eventually mask the fission-induced TL.     

Imaging of small distortions in A15 “lattice” by electron microscopy

One effect of high energy nuclear radiation on A15 compounds has been postulated earlier to be a loss of translational symmetry of the lattice. We report direct evidence of such distortions in Nb₃Sn irradiated with high energy neutrons, using moiré fringes. The distortion is found to increase with increasing fluence, up to a fluence of 2 × 10¹⁹ cm^-2.     

Light-emitting Si: Er structures prepared by molecular-beam epitaxy: Structural defects

The structural defects in silicon layers grown by molecular-beam epitaxy and doped with erbium up to concentrations [Er] = 4 × 10¹⁹ cm^?3 are studied using transmission electron microscopy and high-resolution electron microscopy. It is established that the main types of extended structural defects at erbium concentrations [Er] ≥ 2 × 10¹⁹ cm^?3 are 4-to 25-nm Er spherical precipitates located at the “epitaxial layer-substrate” boundary and platelike ErSi₂ precipitates residing in the { 111} planes throughout the thickness of the layer.     

Radiation defects in Si of high purity

Abstract

Radiation defects created by γ-irradiation of Co⁶⁰ and fast neutrons in high purity p-Si (p = 5×10³ to 4 × 10⁴ Ω.cm) and n-Si (p = 4 × 10² to 5 × 10³ Ω.cm) are investigated by measurements of Hall effect, resistivity and minority carrier lifetime. The oxygen concentration in the crystals is in the range of 5 × 10¹⁴ to 5 × 10¹⁵ cm^?3.

It is shown that stable γ-defects at 300 °K are divacancies and complexes of vacancies with donor or acceptor impurities. Divacancies introduced by γ-irradiation are the secondary defects. They become predominant after ‘exhaustion’ of the dopant. When divacancies become the predominant defects the Fermi level occupies its boundary position E_v +0.39 eV in the gap. At low doses (Φ<10¹⁶ photons/cm²) vacancy-impurity complexes and at heavy doses (Φ>10¹⁷ photons/cm²) divacancies play the main role in the recombination process.

In neutron irradiation disordered regions are introduced and the level at E_v +0.35 eV is observed. The Fermi level in both n- and p-Si shifts to the middle of the gap. At the annealing of disordered regions in the interval 200 to 250 °C the level at E_v +0.27 eV appears and Fermi level occupies its boundary position at E_v +0.39 eV. This indicates that divacancies become the predominant defects which can be formed as secondary defects at the destruction of the disordered regions.     

Magnetic moment relaxation of a shallow acceptor center in heavily doped silicon

Results of studying the temperature dependence of the residual polarization of negative muons in crystalline silicon with germanium (9×10 ¹⁹ cm ^?3 ) and boron (4.1×10 ¹⁸ , 1.34×10 ¹⁹ , and 4.9×10 ¹⁹ cm ^?3 ) impurities are presented. It is found that, similarly to n-and p-type silicon samples with impurity concentrations up to ～10 ¹⁷ cm ^?3 , the relaxation rate ν of the magnetic moment of a _μ Al acceptor in silicon with a high impurity concentration of germanium (9×10 ¹⁹ cm ^?3 ) depends on temperature as ν～T ^q , q≈3 at T=(5–30) K. An increase in the absolute value of the relaxation rate and a weakening of its temperature dependence are observed in samples of degenerate silicon in the given temperature range. Based on the experimental data obtained, the conclusion is made that the spin-exchange scattering of free charge carriers makes a significant contribution to the magnetic moment relaxation of a shallow acceptor center in degenerate silicon at T?30 K. Estimates are obtained for the effective cross section of the spin-exchange scattering of holes (σ _h ) and electrons (σ _e ) from an Al acceptor center in Si: σ _h ～10^?13 cm² and σ _e ～8×10^?15 cm² at the acceptor (donor) impurity concentration n _a (n _d )～4×10¹⁸ cm^?3.     

Radiation damage in triglycine sulphate due to fast neutron irradiation

Abstract

The change in electrical properties of TGS crystals due to induced defects created by fast neutron irradiation of two different energies (2 and 14 MeV) and different integrated neutron fluxes have been studied in the vicinity of phase transition. It is observed that the electrical conductivity increases with increase of neutron fluence up to 1.7 × 10¹⁰ n · cm^?2 and the values of the relative change of electrical conductivity in case of 2 MeV are higher than that of 14 MeV neutrons at the same neutron fluence (φ)     

Energy spectrum of (Sn0.65Pb0.35)0.95Ge0.05Te solid solutions

The paper reports the study on the resistivity ρ and thermoemf S of the (Sn_0.65Pb_0.35)_0.95Ge_0.05Te solid solution layers. The dependences of ρ and S on the hole concentrations in the range 3×10¹⁹–2×10²¹ cm^?3 exhibit jumps in the resistivity and thermoemf minima at close hole concentrations p ₁≈9×10¹⁹ cm^?3, p ₂≈2.5×10²⁰ cm^?3, and p ₃≈4.5×10²⁰ cm^?3. The observed jumps and minima suggest a complex structure of the valence band and the presence of critical points in the energy spectrum of holes. According to the data for SnTe, the critical points in the energy spectrum at the given hole concentrations are identified as the Σ-extremum, saddle point LΣ, and Δ-extremum, respectively.     

Thermal stability and radiation hardness of SiC-based schottky-barrier diodes

Pt/W/Cr/SiC Schottky-barrier diodes that retain good electrophysical parameters up to 450°C are studied. With the Auger electron spectroscopy (AES) method, it is shown that the thermal stability is provided by using a multilayer metal composition that ensures the metal/SiC interface stability. The surface-barrier structures obtained are tested for radiation hardness. They are irradiated by fast neutrons with a fluence of 4.42×10¹⁵ n/cm² and attendant γ radiation with a dose of 8.67×10⁵ R in the concentration range of N _d-N _a=10¹⁶−5×10¹⁷ cm⁻³. Irreversible modifications of the structures at N _d-N _a≤8×10¹⁶ cm⁻³ are found. The degradation of the parameters is inversely proportional to the doping level.     

Influence of the defect state of samples on the luminescence spectra of CdS single crystals irradiated by electrons

The photoluminescence spectra of CdS single crystals irradiated by electrons (E = 1.2 MeV, Φ = 2×10¹⁷ cm^?2) are investigated in the visible and near-infrared regions of electromagnetic radiation. Some samples of the CdS single crystals are preliminarily irradiated by neutrons (E = 2 MeV, Φ = 2 × 10¹⁸ cm^?2) with the aim of increasing the concentration of initial structural defects. From analyzing the peak intensities of photoluminescence in the irradiated single crystals at the wavelengths λ_m = 0.720, 1.030, and 0.605 μm, it is concluded that the CdS samples with a low concentration of structural defects in the initial state possess the highest resistance to electron radiation. It is assumed that the observed transformation of the photoluminescence spectra of the imperfect CdS single crystals subjected to electron irradiation is determined by either the mechanisms of subthreshold defect formation or the transformation of the defect complexes in elastic and electric fields near the large structural damages of the crystal lattice.     

Exciton spectra and electrical conductivity of epitaxial silicon-doped GaN layers

Optical spectra and electrical conductivity of silicon-doped epitaxial gallium nitride layers with uncompensated donor concentrations N _D — N _A up to 4.8 × 10¹⁹ cm^?3 at T ≈ 5 K have been studied. As follows from the current-voltage characteristics, at a doping level of ～3 × 10¹⁸ cm^?3 an impurity band is formed and an increase of donor concentration by one more order of magnitude leads to the merging of the impurity band with the conduction band. The transformation of exciton reflection spectra suggests that the formation of the impurity band triggers effective exciton screening at low temperatures. In a sample with N _D — N _A = 3.4 × 10¹⁸ cm^?3, luminescence spectra are still produced by radiation of free and bound excitons. In a sample with N _D — N _A = 4.8 × 10¹⁹ cm^?3, Coulomb interaction is already completely suppressed, with the luminescence spectrum consisting of bands deriving from impurity-band-valence band and conduction-band-valence band radiative transitions.     

Einfluß der Bestrahlung mit hochenergetischen Sauerstoffionen auf die kritische Stromdichte supraleitender Nb3Sn-Schichten

Nb₃Sn diffusion layers were irradiated with 24 MeV oxygen ions at fluences from 3.2×10¹³ up to 1.6×10¹⁵ cm^?2. The enhancement of the superconducting critical current density Δj _c has been measured as a function of fluence and of the external magnetic fieldH _a(j _c⊥H _a). The thermal annealing treatment of the defects concerning thej _c and induced by irradiation, has been investigated in the temperature region from 200 to 800 °C. The results are compared with the measurements of irradiation of Nb₃Sn with protons and deuterons. The measured data are discussed in connection with size of defects, cluster distance, fluxline distance and pinning-force.     

The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR

N-type GaAs doped with sulphur (2.8 × 10¹⁸ cm^-3) has been subjected to 2 MeV electron irradiation in stages at room temperature and examined by the EPR technique. When the free carrier absorption is first eliminated no EPR signal is detected. After further irradiation, the spectrum of the As anti-site defect appears, grows and subsequently saturates at a concentration of about 10¹⁸ cm^-3. The saturation concentration is about one third of [n] in most samples. The defects are stable on annealing to 500°C but are not observed in various irradiated p-type samples. It is suggested that grown-in defects such as [V_Ga-As_Ga-V_Ga] capture Ga interstitials during the irradiation and are thereby converted to the simpler anti-site defect.     

Elastic constants of solid krypton at T = 77 K determined by inelastic neutron scattering

Long-wavelength acoustic phonons have been studied for each of the [ζ00]T, [ζ00]L, [ζζ0]L and [ζζ0]T₁ branches in solid Kr at T = 77 K by means of inelastic neutron scattering utilizing ‘cold neutrons’ as they are available in the long-wave length tail of the pile spectrum. The raw data have been corrected for resolution effects taking into account the curvature of the dispersion surface and variation of mode eigenvectors. It has turned out, that this yields appreciable shifts of the raw data. The results of our experiment give c₁₁ = 4·25 ± 0·10, c₄₄ = 2·04 ± 0·03, c₁₂ = 2·82 ± 0·12 and a value for B = (c₁₁ + 2c₁₂)/3 = 3·30 ± 0·09 × 10¹⁰ dyne/cm². Available thermodynamic data for Kr gives a derived value for B^ad = 2·58 ± 0·06 × 10¹⁰ dyne/cm² indicating a large difference between zero sound and first sound in solid Kr at high temperatures.     

Dosimetry and fast neutron energies characterization of photoneutrons produced in some medical linear accelerators

This work focusses on the estimation of induced photoneutrons energy, fluence, and strength using nuclear track detector (NTD) (CR-39). Photoneutron energy was estimated for three different linear accelerators, LINACs as an example for the commonly used accelerators. For high-energy linear accelerators, neutrons are produced as a consequence of photonuclear reactions in the target nuclei, accelerator head, field-flattening filters and beam collimators, and other irradiated objects. NTD (CR-39) is used to evaluate energy and fluence of the fast neutron. Track length is used to estimate fast photoneutrons energy for linear accelerators (Elekta 10 MV, Elekta 15 MV, and Varian 15 MV). Results show that the estimated neutron energies for the three chosen examples of LINACs reveals neutron energies in the range of 1–2 MeV for 10 and 15 MV X-ray beams. The fluence of neutrons at the isocenter (Φ_total) is found to be (4×10⁶ n cm² Gy^?1) for Elekta machine 10 MV. The neutron source strengths Q are calculated. It was found to be 0.2×10¹² n Gy^?1 X-ray at the isocenter. This work represents simple, low cost, and accurate methods of measuring fast neutrons dose and energies.